CN102969322A - Radiological image detection apparatus - Google Patents
Radiological image detection apparatus Download PDFInfo
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- CN102969322A CN102969322A CN2012102702300A CN201210270230A CN102969322A CN 102969322 A CN102969322 A CN 102969322A CN 2012102702300 A CN2012102702300 A CN 2012102702300A CN 201210270230 A CN201210270230 A CN 201210270230A CN 102969322 A CN102969322 A CN 102969322A
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- image detection
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- radiological image
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/20189—Damping or insulation against damage, e.g. caused by heat or pressure
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20187—Position of the scintillator with respect to the photodiode, e.g. photodiode surrounding the crystal, the crystal surrounding the photodiode, shape or size of the scintillator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
Abstract
A radiological image detection apparatus includes a radiological image conversion panel and a sensor panel. A sealant that is disposed between a substrate of the radiological image conversion panel and a substrate of the sensor panel and surrounds a scintillator in the radiological image conversion panel and a pixel array in the sensor panel to form an isolated space on the inside of the sealant. The scintillator includes a columnar portion including a group of columnar crystals formed by growing crystals of the phosphor in columnar shapes and a surface configured by a set of tips of the columnar crystals is disposed in close contact with the pixel array without being bonded to the pixel array. Both of the substrate of the radiological image conversion panel and the substrate of the sensor panel are flexible, and the isolated space is depressurized.
Description
The cross reference of related application
The application requires Japanese patent application 2011-188048 number rights and interests of submission on August 30th, 2011, by reference its complete content is incorporated herein.
Technical field
The present invention relates to a kind of Radiological image detection.
Background technology
In recent years, will utilize flat-panel detector (FPD) to detect radiation image and the Radiological image detection that produces DID is put to actual use.Radiological image detection has distributed fast and has come, because compare with the imaging plate of being constructed by light stimulus fluorophor (gathering fluorophor), can moment confirm image.Can obtain various Radiological image detections, wherein known a kind of be indirect conversion type.
The indirect conversion type Radiological image detection comprises when being exposed to radioactive ray lower times for generation of the scintillator (scintillator) of fluorescence with for detection of the pel array of the fluorescence of described scintillator.Be arranged in described scintillator and described pel array in for example independent substrate and by adhesive layer and it is mutually bonding.By described scintillator described radioactive ray are converted to light and convert the fluorescence of described scintillator to the signal of telecommunication by pel array, the result, produce DID (referring to for example, the JP-A-2011-017683 corresponding with US 2011/006213A1; And JP-A-2011-033562).
Described scintillator typically uses alkaline halide fluorophor such as cerous iodide (CsI) and sodium iodide (NaI) to form by vapour deposition process and consists of by be grown to the column crystal group that cylindricality forms by the crystal with fluorophor.The column crystal of the fluorophor that forms by vapour deposition process does not contain the impurity such as adhesive, and has also suppressed the scattering of fluorescence by photoconductive effect, and described photoconductive effect is to guiding at the fluorescence that produces in column crystal on the crystal growth direction.Therefore, can improve the sensitivity of Radiological image detection and the acutance of image.
Wherein the Radiological image detection of scintillator and pel array mutual close contact under the condition of not using adhesive layer also has been known (referring to for example JP-A-2010-261720).In JP-A-2010-261720 in the disclosed Radiological image detection, the substrate that is used for the support scintillator is flexible, places scintillator and pel array and is also arranging insulating space for the substrate of supporting scintillator with between for the substrate of supporting pel array.When insulating space is reduced pressure, be used for supporting the substrate generation warpage of scintillator, and by pel array scintillator suppressed.Therefore, reduced the inhomogeneities of the image quality that the inhomogeneities by the thickness of adhesive layer causes.
Summary of the invention
In the scintillator that is formed by the column crystal group, the length of column crystal may change the part.In this case, in the Radiological image detection described in the JP-A-2010-261720, only can not absorb the localized variation of column crystal length by the warpage for the substrate of supporting scintillator, and may between scintillator and pel array, produce the gap in the part.The diffusion of the fluorescence that is produced by scintillator can be caused in described gap, the acutance of the local deteriorated image of this meeting.
Consider the problems referred to above and finished the present invention, the purpose of this invention is to provide and have the inhomogeneity Radiological image detection of excellent image quality.
According to an aspect of the present invention, a kind of Radiological image detection is provided, it comprises: radiation image conversion panel, described radiation image conversion panel comprise scintillator and support the substrate of described scintillator that described scintillator is included in the fluorophor that produces fluorescence when being exposed to radioactive ray; Sensor panel, described sensor panel comprise pel array and support the substrate of described pel array that described pel array is to arrange and to detect the fluorescence that produces from described scintillator with the mode of described scintillator close contact; And sealant, described sealant arrangement is between the substrate of the substrate of described radiation image conversion panel and described sensor panel and surround described scintillator and described pel array with at the inboard insulating space that forms of described sealant.Described scintillator comprises cylindrical portion, and described cylindrical portion comprises the column crystal group that the crystal by the described fluorophor of growing with columnar shape forms.Do not arrange surface by one group of pointed tip configuration of described column crystal not to be adhered to mode on the described pel array with the pel array close contact.The substrate of described radiation image conversion panel and the substrate of described sensor panel are both flexible.Described insulating space is depressurized.
According to another aspect of the present invention, scintillator and pel array are put into by the first substrate that is used for supporting described scintillator, are used for supporting the space that described pel array and sealant form, and described space reduced pressure, so that described scintillator and pel array close contact and be not adhered on the pel array.Flexible by described the first substrate and described the second substrate are both formed, can there be any gap in described scintillator and described pel array with the mutual close contact of its complete form.Therefore, can improve the uniformity of image quality.
Because scintillator and pel array mutually non-adhesive are so radiation image conversion panel and sensor panel can easily be separated from each other.Therefore, when being damaged for one in radiation image conversion panel and the sensor panel, can only replace the panel of damage so that described panel circulation is reused as Radiological image detection.
Description of drawings
Fig. 1 is the figure that schematically shows according to the structure of the Radiological image detection of illustrative embodiments of the invention.
Fig. 2 is the figure of structure of sensor panel that schematically shows the Radiological image detection of Fig. 1.
Fig. 3 is the figure of structure of sensor panel that schematically shows the Radiological image detection of Fig. 1.
Fig. 4 is the figure of structure of scintillator that schematically shows the Radiological image detection of Fig. 1.
Fig. 5 is the cross-sectional view strength of scintillator of Fig. 4 of V-V along the line intercepting.
Fig. 6 A～6C is the figure that schematically shows for the manufacture of the example of the method for the Radiological image detection of Fig. 1.
Fig. 7 A～7C is the figure that is illustrated schematically in the behavior of scintillator during the manufacturing process of Fig. 6.
Fig. 8 A～8C is the figure that is illustrated schematically in the behavior of scintillator during the manufacturing process of Fig. 6.
Fig. 9 is the figure of structure that schematically shows the modification of Fig. 1 Radiological image detection.
Figure 10 is the cross-sectional view strength of scintillator of Fig. 9 of X-X along the line intercepting.
Figure 11 is the figure that schematically shows the structure of the Radiological image detection of another exemplary according to the present invention.
Figure 12 schematically shows according to the present invention the also figure of the structure of the Radiological image detection of another exemplary.
Embodiment
Fig. 1 has shown the structure according to the Radiological image detection of illustrative embodiments of the invention.
Radiation image conversion panel 2 comprises flexible support substrate 10 and scintillator 11, and described scintillator 11 is formed by the fluorophor that produces fluorescence when being exposed to radioactive ray.Described scintillator 11 is arranged on the described support base 10.
Described sensor panel 3 comprises flexible insulation substrate 20 and the pel array 21 that is arranged on the described dielectric base 20.Each pixel of pel array 21 detects the fluorescence that is produced by scintillator 11.
So that scintillator 11 and pel array 21 are mutually in the face of arranging and arranging radiation image conversion panel 2 and sensor panel 3 by sealant 4 bonding modes.
Compare with its outside, described space S is in decompression state.Described scintillator 11 can not occur bonding because of the distortion of support base 10 and dielectric base 20 with described pel array 21 close contacts.
Fig. 2 and 3 has shown the structure of sensor panel 3.
Photo-electric conversion element 23 comprises the fluorescence that receives scintillator 11 with the photoconductive layer 25 that produces electric charge and is arranged in pair of electrodes 26,27 on described photoconductive layer 25 front and backs.The lip-deep electrode 26 that is arranged in scintillator 11 sides of photoconductive layer 25 is to execute biased bias electrode to photoconductive layer 25, and the electrode 27 that is arranged on the opposite side surfaces is charge collection electrodes that the electric charge that is produced by photoconductive layer 25 is collected.Described charge collection electrode 27 is connected with switching device 24, and reads out in electric charge collected in the charge collection electrode 27 by switching device 24.
Described dielectric base 20 has a plurality of gate lines 28 and a plurality of holding wire (data wire), described gate line 28 extends the ON/OFF with the switching device 24 that starts each pixel 22 in an orientation of the pixel 22 of two-dimensional arrangements (row to), and described holding wire (data wire) is being read electric charge with the switching device 24 by opening with the direction of described gate line 28 quadratures (row to) extension.Described gate line 28 be connected 30 places, connection end that holding wire 29 each leisure are arranged in dielectric base 20 edges and link to each other with connecting circuit 31 and link to each other with the circuit board (not shown) by connecting circuit 31, described circuit board has gate drivers and signal processing unit.
According to by the signal of gate line 28 by the gate drivers supply, successively line by line switching device 24 is opened.To be transferred to holding wire 29 by the electric charge that the switching device 24 of opening is read and be input in the signal processing unit as charge signal.Therefore, the signal of telecommunication is read and converted to electric charge successively line by line in signal processing unit, produce thus DID.
Described insulating material 20 can be made by for example resin material.Can expect that the resin material that will have excellent heat resistance is used for described resin material, it can be selected from for example PETG (PET), PEN (PEN), polyether sulfone (PES), Polyetherimide, polyether-ether-ketone, polyphenylene sulfide, Merlon (PC), cellulosic triacetate (TAC), cellulose ethanoate propionic ester (CAP), polyimides, polyarylate and biaxial stretch-formed polystyrene (OPS).Described resin can contain the organic or inorganic filler.Can suitably use by what aromatic polyamides and biological nano fiber were made to have a flexible resin substrate such as low-thermal-expansion and high-intensity performance, described performance is can not obtain by forming existing resin material or flexible glass substrate with the following thickness of about 0.1mm.Particularly, the preferred glass substrate because it has such as low-thermal-expansion and high-intensity performance, and has humidity resistance or the capacity for air resistance more excellent than resin base usually.
Can construct photo-electric conversion element 23 by the amorphous silicon photodiode, wherein for example the PN junction film of amorphous silicon or PIN knot film are used for photoconductive layer 25.As photoconductive layer 25, except amorphous silicon, also can use the organic photoelectric conversion film of being made by organic compound such as quinacridone etc.This expects, because compare when using amorphous silicon, can form film under lower temperature, and consider from heat resistance, can select more kinds of materials to be used for dielectric base 20.The below describes the organic photoelectric conversion film.
(TFT) can construct switching device 24 by for example thin-film transistor, wherein amorphous silicon is used for active layer.Material as the TFT active layer, except amorphous silicon, also can use amorphous oxide semiconductor material, organic semiconducting materials etc., the reason of expecting described material is to compare with the situation of using amorphous silicon, can under lower temperature, form film, and consider from heat resistance, can select more kinds of materials to be used for dielectric base 20.The below describes described amorphous oxide semiconductor material or organic semiconducting materials.
The array of the array of photo-electric conversion element 23 and switching device 24 can form at identical layer, and can form the array of switching device 24 and the array of photo-electric conversion element 23 at different layers successively from scintillator 11 sides.Yet, as in the example shown, preferably on different layers, successively form successively the array of photo-electric conversion element 23 and the array of switching device 24 from scintillator 11 sides.The array of the array of described photo-electric conversion element 23 and switching device 24 forms at different layers, therefore, can improve the size of photo-electric conversion element 23.Because the array of photo-electric conversion element 23 and the array of switching device 24 form on scintillator 11 sides successively, so can with array and the scintillator 11 adjacent layouts of photo-electric conversion element 23, improve thus sensitivity.
Fig. 4 has shown the structure of radiation image conversion panel 2.
In ISS type Radiological image detection 1, support base 10 is arranged on the opposition side of radioactive ray light incident side, and constructs by stacking a plurality of flexible sheet basic materials.In this example, construct support base 10 in the mode of two layers of first foundation material 13 and the second basic material 14.A surface of described first foundation material 13 has scintillator 11 and its another surface is adhered on the second basic material 14.Described the second basic material 14 strengthens the first foundation material 13 that is formed with scintillator 11 on it, and by sealant 4 described scintillator 11 is adhered on the dielectric base 20 of sensor panel 3 (referring to Fig. 1).
About the manufacturing process of following scintillator 11, as first foundation material 13, for example can use the flexible resin substrate with excellent heat resistance.As resin base, can use the resin base such as the dielectric base 20 of sensor panel 3.Also can suitably use flexible glass substrate.
Described the second basic material 14 can have heat resistance in the temperature range of using Radiological image detection 1, and flexible resin substrate or substrate of glass can be used as the second basic material 14.Yet, consider that from strengthening first foundation material 13 the second basic material 14 is preferred by making than first foundation material 13 harder materials.
The surface that is formed with the first foundation material 13 of scintillator 11 on it has reflectance coating 15.Described reflectance coating 15 forms by metallic film such as the aluminium that formation has light reflective.Can be by forming metallic film such as for example means of deposition on the surface of first foundation material 13.
The group of the column crystal 43 that forms by the crystal with columnar shape growth fluorophor constructs scintillator 11.Sometimes, can be with the column crystal of a plurality of vicinities in conjunction with to form single column crystal.Between adjacent column crystal 43, there is the gap, and column crystal 43 separate existence.
The fluorescence that produces from each column crystal 43 is because the refringence between column crystal 43 and near the gap it and repeatedly experience total reflection in column crystal 43, so that the diffusion of fluorescence is suppressed, and with the fluorescent optics pel array 21 that leads.Therefore, improved the acutance of image.
By radiation exposure and from the fluorescence that each column crystal 43 produces to the fluorescence of the opposition side orientation of pel array 21, by reflectance coating 15 to pel array 21 lateral reflections.Therefore, the service efficiency of fluorescence improves, and sensitivity improves thus.
Each tip of column crystal 43 can form with the pointed cone shape.When each tip of column crystal forms with outstanding shape, to compare with even shape or concave shape, the extraction efficiency of light and sensitivity can improve.The vertex angle theta at described tip is preferably 40 °～80 °.
As the fluorophor that forms by the scintillator 11 of column crystal group structure, cesium iodide (CsI:Tl), the sodium iodide (NaI:Tl) of thallium doping and the cesium iodide (CsI:Na) that sodium mixes that for example, can use alkaline halide fluorophor such as thallium to mix.Wherein, CsI:Tl is preferred, because its emission spectrum is suitable for amorphous silicon or quinacridone are used for the maximum (amorphous silicon of about 550nm, the quinacridone of about 560nm) of spectral sensitivity of the photodiode of photoconductive layer 25.
The halogen in aforesaid alkaline halide fluorophor by diaphragm 12a the first foundation material 13 that is formed with reflectance coating 15 on it coated, because can corrode the metal as the material of reflectance coating 15.Described alkaline halide fluorophor has hygroscopy and also by diaphragm 12b scintillator 11 is coated.
As the material of diaphragm 12a, 12b, typically use poly-to xylylene.Yet, the film that also can use PETG (PET) or be made by polymer compound, described polymer compound has low water vapor permeability, for example polyester, polymethacrylates, NC Nitroncellulose, cellulose ethanoate, polypropylene and PETG.
Fig. 5 has shown a kind of electron micrograph, and it has shown the cross section of the scintillator 13 that the line IV-IV in Fig. 4 intercepts.
Can be clear from Fig. 5, should be understood that the direction of growth with respect to crystal, each column crystal 43 shows the diameter of section of basic homogeneous, and column crystal 43 exists independently of each other because of each column crystal 43 ambient air gaps.From photoconductive effect, mechanical strength with prevent that picture element flaw from considering that preferably, the crystal diameter of each column crystal 43 (column diameter) is 2 μ m～8 μ m.When the column diameter too hour, the mechanical strength of each column crystal 43 is not enough, thereby exists column crystal 43 to wait the worry that be damaged because impacting.When crystal diameter was too large, the number that is used for the column crystal 43 of each image component descends, thereby has following worry: when a crystal in the crystal corresponding with image component broke, image component very likely produced defective.
Herein, crystal diameter refers to the maximum gauge of the column crystal 43 observed from above on crystal growth direction.As for concrete method of measurement, by among SEM (scanning electron microscopy), observe to measure the column diameter of each column crystal 43 from the direction of growth top of column crystal 43.Under enlargement ratio (about 2000 times), observe, utilize described observation, can in each projection (shot), observe 100～200 column crystals 43.Maximum to the column diameter of captured all crystals in the projection is measured and is averaging.Use the mean value that obtains thus.Column diameter (μ m) is measured to two-decimal, and mean value is rounded up in the mode of two-decimal according to JIS Z8401.
The length (thickness of scintillator 11) of column crystal 43 can be set according to the energy of radioactive ray, but consider from the absorption of the radioactive ray scintillator 11 and image sharpness, can preferably set well in the scope of 200 μ m～700 μ m.When the thickness of scintillator 11 was too thin, radioactive ray may not be fully absorbed and sensitivity may be deteriorated, and when its thickness is too thick, may cause light diffusion and the acutance of image is also possible deteriorated thus, although there is the photoconductive effect of column crystal 43.
Can make scintillator 11 by vapour deposition process.When CsI:Tl is used as fluorophor, by for example for example conducting electrical currents in the resistance heating crucible, under the vacuum degree of 0.01Pa～10Pa, CsI:Tl is carried out heating evaporation, under the temperature of the first foundation material 13 in room temperature (20 ℃)～300 ℃ scope on first foundation material 13 with columnar shape deposition and growth CsI:Tl crystal.
Final stage at growth column crystal 43 is controlled the temperature of first foundation material 13, thereby the shape (tip angle (drift angle) θ) at the tip of each column crystal 43 is controlled.Usually, described tip angle forms 170 ° under 110 ℃, forms 60 ° under 140 ℃, forms 70 ° under 200 ℃, and 120 ° of 260 ℃ of lower formation.
During the manufacturing process of aforesaid scintillator 11, localized variation can occur owing to the deflection of for example fluorophor steam and the misgrowth of crystal in the length of column crystal 43, may form on the fluorescent emission surface of scintillator 11 thus uneven.Hereinafter, to wherein with described uneven the absorption so that scintillator 11 does not exist the structure in gap to describe with its complete form and pel array 21 close contacts.
Fig. 6 A～6C has shown the example of making the method for Radiological image detection 1.
At first, prepare to be formed with on it scintillator 11 first foundation material 13, be used for constructing with described first foundation material 13 the second basic material 14 and the sensor panel 3 of the support base 10 of radiation image conversion panel 2.
Be deposited on the sensor panel 3 first foundation material 13 and the fluorescent emission surface (referring to Fig. 6 A) of suppressing scintillators 11 at pel array 21.When there was unevenness in the fluorescent emission surface at scintillator 11, described first foundation material 13 deformed to absorb described unevenness.Namely, bossing for the fluorescent emission surface, with promoting to separate with sensor panel 3 with its neighboring area with the overlapping zone of described bossing of first foundation material 13, for the recessed portion on fluorescent emission surface, to first foundation material 13 with the partly overlapping zone of the female and its neighboring area suppress with sensor panel 3 close contacts.
Subsequently, coating binder 5 in the adhesive surface of first foundation material 13 and the second basic material 14 any or two surfaces, the adhesive that will serve as sealant 4 is applied on any one or both in the dielectric base 20 of the second basic material 14 and sensor panel 3, then, so that the second basic material 14 and first foundation material 13 and dielectric base 20 overlapping (referring to Fig. 6 B).
Before will being inserted in the adhesive 5 between first foundation material 13 and the second basic material 14 and being inserted in adhesive solidification between the second basic material 14 and the dielectric base 20 as sealant 4, the space S that is formed by sealant 4 is reduced pressure.When space S was reduced pressure, the second basic material 14 and dielectric base 20 deformed, and have reduced thus the volume of space S.Distortion by the second basic material 14 and dielectric base 20 compresses scintillator 11 and pel array 21 mutually, and so that scintillator 11 and pel array 21 both mutual close contacts and gapless, thereby not mutually bonding (referring to Fig. 6 C).
Under this state, first foundation material 13 and the second basic material 14 are mutually bonding by inserting therebetween adhesive 5, the second basic material 14 and dielectric base 20 are mutually bonding by inserting therebetween the adhesive that serves as sealant 4, obtain thus Radiological image detection 1.
Fig. 7 A～7C and 8A～8C schematically illustrate the distortion of first foundation material 13 and form the Flock behavior of the column crystal 43 of scintillator 11.
According to the distortion of first foundation material 13, the gap enlargement in deformed region between the tip of a plurality of column crystals 43 or reduce.
As shown in Fig. 7 A～7C, when there is bossing in the fluorescent emission surface at scintillator 11 (referring to Fig. 7 A), the fluorescent emission surface of scintillator 11 is covered by pel array 21 compressions.Thus, when promoting first foundation material 13, the gap between the tip of a plurality of column crystals 43 diminishes in the central part office of deformed region.When column crystal 43 collided mutually at its most advanced and sophisticated place, the further distortion of first foundation material 13 was restricted.As a result, around bossing, residual gap between scintillator 11 and pel array 21 (referring to Fig. 7 B).Therefore, also form dielectric base 20, thus its deforming along the fluorescent emission surface of scintillator 11 by the space S of holding scintillator 11 and pel array 21 is reduced pressure for flexibility.Therefore, scintillator 11 and pel array 21 can be with the mutual close contact of its complete form gapless and mutually can bonding (referring to Fig. 7 C).
Shown in Fig. 8 A～8C, when there is recessed portion in the fluorescent emission surface at scintillator 11, the fluorescent emission surface of scintillator 11 is covered so that first foundation material 13 sinks by pel array 21 compressions, and the gap between the tip of a plurality of column crystals 43 diminishes in the edge of deformed region.When column crystal 43 collided mutually at the place, tip, the further distortion of first foundation material 13 also was restricted.As a result, in recessed portion, residual gap between scintillator 11 and pel array 21 (referring to Fig. 8 B).Therefore, also form dielectric base 20, thus its deforming along the fluorescent emission surface of scintillator 11 by the space S of holding scintillator 11 and pel array 21 is reduced pressure for flexibility.Therefore, mutually close contact and gapless and mutually can bonding (referring to Fig. 8 C) of scintillator 11 and pel array 21.
As mentioned above, in Radiological image detection 1, scintillator 11 and pel array 21 are put into by the support base 10 that is used for supporting scintillator 11, are used for supporting the dielectric base 20 of pel array 21 and the space S that sealant 4 forms, and space S is reduced pressure so that scintillator 11 and pel array 21 mutual close contacts and mutually non-adhesive.Both can be so that scintillator 11 and pel array 21 mutual close contacts by utilizing flexible material to form support base 10 and dielectric base 20.Therefore, can improve the uniformity of image quality.
In ISS type Radiological image detection 1, be deposited on the opposition side of radioactive ray light incident side support base 10 can for the stacked structure of first foundation material 13 and the second basic material 14 to strengthen Radiological image detection 1, improve thus anti-load and impact resistance and can not cause because of radioactive ray and absorb the sensitivity deterioration that causes.
In aforesaid manufacture method, the first foundation material 13 that utilizes scintillator 11 to form deforms and then the second basic material 14 is adhered on first foundation material 13 and the dielectric base 20.As a result, first foundation material 13 can distortion and do not damage the flexibility of first foundation material 13.In addition, after being adhered to the second basic material 14 on first foundation material 13 and the dielectric base 20, can guarantee anti-load and the impact resistance of Radiological image detection 1.
Because scintillator 11 and pel array 21 can be mutually not bonding, so radiation image conversion panel 2 can easily be separated from each other with sensor panel 3.When in radiation image conversion panel 2 and the sensor panel 3 any one is damaged, can only replace the panel of infringement so that described panel is reused as Radiological image detection 1.
Consider from recycling (doing over again), be used for the second basic material 14 and dielectric base 20 mutually the bonding adhesive that serves as sealant 4 or be used for first foundation material 13 and the second basic material 14 mutually any adhesive of bonding adhesive 5 all be preferably its bonding strength can be because of the deteriorated dismountable adhesive of energy exposure.After this manner, radiation image conversion panel and sensor panel can more easily be separated from each other, and scintillator 11 and pel array 21 be close contact and gapless can't be mutually bonding mutually, thereby so that can be with described panel as Radiological image detection 1 recycling by aforesaid manufacture method.
As for detachable adhesive, such as using by thermoplastic resin being heated and softens the adhesive that forms, the adhesive that mixes with thermal expansivity microcapsules or blowing agent, shining strippable adhesive etc. by ultraviolet ray.
Fig. 9 has shown the modification of Radiological image detection 1.
In the Radiological image detection 1A shown in Fig. 9, scintillator 11 comprises group cylindrical portion 40 and the non-cylindrical portion 41 that form by column crystal 43.Order with non-cylindrical portion 41 and cylindrical portion 40 overlaps to form described cylindrical portion 40 and non-cylindrical portion 41 in support base 10.
Described non-cylindrical portion 41 is formed by the group of the smaller granular crystal 42 of fluorescent material.The amorphous materials that in described non-cylindrical portion 41, can contain fluorescent material.In described non-cylindrical portion 41, granular crystal with its mutually brokenly bonding or overlapping state exist.
Described non-cylindrical portion 41 has the small spaces that is dispersed in wherein.Owing to have the space, so can replace described non-cylindrical portion 41 by the reflectance coating 15 of support base 10 in the aforesaid Radiological image detection 1.
The density of the density ratio cylindrical portion 40 of described non-cylindrical portion 41 is large, and the porosity of non-cylindrical portion 41 is less than the porosity of cylindrical portion 40.Because non-cylindrical portion 41 is inserted between support base 10 and the cylindrical portion 40, so can improve bonding between support base 10 and the scintillator 11, prevent that thus scintillator 11 from peeling off from support base 10.
Figure 10 has shown electron micrograph, and it has shown the cross section of the scintillator 11 that the line X-X in Fig. 9 intercepts.
Can be clear from Figure 10, in non-cylindrical portion 41, crystal and granular crystal 42 link brokenly or are mutually stacked, thereby compare with cylindrical portion 40, do not have cognizable clearly air gap between crystal.Consider that from the reflection of bonding and light preferably, the diameter of each crystal that forms the granular crystal 42 of non-cylindrical portion 41 is 0.5 μ m～7.0 μ m.When crystal diameter too hour, void ratio is close to zero, thereby has the worry that the light reflection function can be deteriorated.When crystal diameter was too large, flatness can be deteriorated, thereby have the worry deteriorated to the bonding meeting of support base 10.In addition, consider from the light reflection that preferably, the shape that forms the granular crystal 42 of non-cylindrical portion 31 is spherical substantially.
When linking crystal, measure by following crystal diameter to each crystal.That is the straight line that, will obtain by the depression (being recessed into) that produces between the connection adjacent crystal is as the border between the crystal.The crystal that mutually links is separated to have minimum polygon and measures polygonal crystal diameter.In the mode identical with crystal diameter in the cylindrical portion 40, obtained the mean value of crystal diameter.Use the mean value that obtains thus.
Consider that from the bonding and light reflection to support base 10 preferably, the thickness of non-cylindrical portion 41 is 5 μ m～125 μ m.When the thickness of non-cylindrical portion 41 too hour, existence can not obtain the abundant bonding worry to support base 10.When the thickness of non-cylindrical portion 41 is too large, fluorescence in non-cylindrical portion 41 contribution and the diffusion that in non-cylindrical portion 41, causes because of the light reflection increase, thereby the worry that exists image sharpness to descend.
By whole non-cylindrical portion 41 and the cylindrical portion 40 of also forming continuously of vapour deposition process.Particularly, under the environment with 0.01～10Pa vacuum degree, utilize and to its resistance heating crucible that applies electric power CsI:Tl is carried out heating evaporation.Thus, CsI:Tl is deposited on the first foundation material 13 that Temperature Setting is room temperature (20 ℃)～300 ℃.
When first foundation material 13 began to form the CsI:Tl crystalline phase, the crystal of deposition rate small diameter was to form non-cylindrical portion 41.Then change described at least condition, i.e. at least one in the temperature of vacuum degree or first foundation material 13.Thus, after forming non-cylindrical portion 41, form continuously cylindrical portion 40.Particularly, the temperature of gas clean-up and/or first foundation material 13, thereby the group of growth column crystal 43.
Figure 11 has shown that the another kind of Radiological image detection 1 improves example.
In the Radiological image detection 1B shown in Figure 11, be in the most advanced and sophisticated side of column crystal 43 between the group of column crystal 43 of scintillator 11 and fill filler 50.
The fluorescent emission surface of scintillator 11 is constructed by the group of column crystal 43, and considers from the extraction efficiency of light, with the tip of each column crystal 43 of cone-shaped formation.Therefore, if there is no filler 50, then when scintillator 11 is covered by pel array 21 compression, load may be concentrated on the tip of column crystal 43 and so that most advanced and sophisticated distortion, and damage pel array 21.Yet load has prevented the distortion at tip of column crystal 43 and the damage of pel array 21 thus because existing filler 50 to disperse.
Owing in the group of column crystal 43, be filled with filler 50, enter between the column crystal 43 so can prevent diaphragm 12b.As diaphragm 12b, for example, use as mentioned above poly-to xylylene.Yet; because the refractive index (1.0) of the refractive index ratio air of diaphragm 12b is large; so when in the group of column crystal 43, introducing diaphragm 12b; descend at the part place column crystal 43 of introducing diaphragm 12b and the specific refractivity between its surrounding medium, reduce thus the photoconductive effect of column crystal 43 and the acutance of deteriorated image.Yet, owing in the group of column crystal 43, be filled with filler 50, enter into the group of column crystal 43 so can prevent diaphragm 12b.
As filler 50, can suitably use the resin material of energy-curable, it is transparent and has suitable flowability for the fluorescence that is produced by scintillator 11.Particularly, but there are phenol resin, carbamide resin, melmac, unsaturated polyester resin, epoxy resin and phthalic acid diaryl ester resin in illustration ground.
Consider that from the reduction of the photoconductive effect that suppresses column crystal 43 by diaphragm 12b can be preferably that the refractive index of refractive index ratio diaphragm 12b is less filler is used as filler 50.For example, consider that refractive index as the CsI:Tl of the fluorophor of column crystal 43 is 1.79 and is 1.639 as the poly-refractive index to xylylene of diaphragm 12b that preferably, the refractive index of filler 50 is below 1.6.Refractive index as filler 50 illustrative above-mentioned materials can fluctuate according to for example its grade.The refractive index of rosin diene resin is 1.58～1.66, the refractive index of carbamide resin is 1.54～1.56, the refractive index of melmac is 1.6～1.7, the refractive index of unsaturated polyester resin is 1.52～1.57, the refractive index of epoxy resin is 1.55～1.61, and the refractive index of phthalic acid diaryl ester resin is 1.51～1.52.
Figure 12 schematically illustrates the structure for the Radiological image detection of describing another exemplary of the present invention.The parts general with above-mentioned Radiological image detection 1 represent by general label, and the descriptions thereof are omitted or it simply is described.
Radiological image detection 101 shown in Figure 12 comprises radiation image conversion panel 102 and sensor panel 103.
Described radiation image conversion panel 102 comprises flexible support substrate (the first substrate) 110 and the scintillator 11 that is formed by the fluorophor that produces fluorescence by radiation exposure.Described scintillator 11 is arranged on the described support base 110.
Sensor panel 103 comprises flexible insulation substrate (the second substrate) 120 and the pel array 21 that is arranged on the described dielectric base 120.Each pixel of pel array 21 detects the fluorescence that is produced by scintillator 11.
The mode that radiation image conversion panel 102 and sensor panel 103 face toward mutually with scintillator 11 and pel array 21 is arranged and is mutually bonding by sealant 4.
Compare with its outside, described space S is in decompression state.Because support base 110 and dielectric base 120 deform, so described scintillator 11 can not be adhered on the described pel array 21 with described pel array 21 close contacts.
Radiological image detection 101 is so-called transmissive side collection (PSS) type Radiological image detections, and is arranged in order radiation image conversion panel 102 and sensor panel 103 from the radioactive ray light incident side.Described radioactive ray see through support base 110 and incide on the scintillator 11.In the scintillator 11 of incident radioactive ray, produce fluorescence and detect by 21 pairs of fluorescence by its generation of pel array.
In PSS type Radiological image detection 101, construct dielectric base 120 on the opposition side that is arranged in the radioactive ray light incident side in the mode of first foundation material 113 and 114 two layers of the second basic material.A surface of described first foundation material 113 has pel array 21 and its another surface is adhered on the second basic material 114.Described the second basic material 114 strengthens the first foundation material 113 that is formed with pel array 21 on it, and by sealant 4 described pel array 21 is adhered on the support base 110 of radiation image conversion panel 102 (referring to Fig. 1).
In Radiological image detection 101, scintillator 11 and pel array 21 are put into by the support base 110 that is used for supporting scintillator 11, the dielectric base 120 that is used for support pel array 21 and the space S that sealant 4 forms, and because space S is reduced pressure, so scintillator 11 is not adhered on the described pel array 21 with pel array 21 mutual close contacts.Scintillator 11 and pel array 21 can be with its complete form close contacts, because support base 110 and dielectric base 120 are both formed by flexible material.Therefore, can improve the uniformity of image quality.
In PSS type Radiological image detection 101, be deposited on the opposition side of radioactive ray light incident side dielectric base 120 can for the stacked structure of first foundation material 113 and the second basic material 114 to strengthen Radiological image detection 101, improve thus anti-load and impact resistance and do not cause because of radioactive ray and absorb the sensitivity deterioration that causes.
Because above-mentioned Radiological image detection can detect radiation image under high sensitivity and high-resolution, so can and be applied to hang down the x-ray imaging device such as the mammographic device that are used for the medical diagnosis purpose that the radiation exposure amount detects sharp-pointed image and need with its installation; And in other various devices.For example, Radiological image detection can be applied to nondestructive testing with in industrial x-ray imaging device or the device for detection of the particle ray outside the electromagnetic wave (alpha ray, β ray, gamma-rays).Described Radiological image detection has the application of wide region.
The below is described the material of the composed component that can be used in sensor panel.
[photo-electric conversion element]
The photoconductive layer 25 (referring to Fig. 2) that the disclosed film that is formed by the OPC material (hereinafter being called the OPC film) in JP-A-2009-32854 can be used for above-mentioned photo-electric conversion element 23.Described OPC film contains the organic photoelectric transition material, absorbs the light launch and produce electric charge according to the light that absorbs from fluorophor.This OPC film that contains the organic photoelectric transition material has sharp-pointed absorption spectrum in visible-range.Thus, be difficult to be absorbed by the OPC film by the electromagnetic wave outside the light of fluorophor emission, but the noise that the radioactive ray that can establishment be absorbed by the OPC film such as X ray produce.
Preferably, form the peak wavelength of the more approaching light by the fluorophor emission of the absorption peak wavelength of organic photoelectric transition material of OPC film, thereby more effectively absorb the light by the fluorophor emission.Ideally, the absorption peak wavelength of organic photoelectric transition material is consistent with the peak wavelength of the light of being launched by fluorophor.Yet, if the absorption peak wavelength of organic photoelectric transition material is little with the difference of the peak wavelength of the light of being launched by fluorophor, can absorb fully the light by the fluorophor emission.Particularly, the difference of the peak wavelength of the light that the absorption peak wavelength of organic photoelectric transition material and fluorophor response radioactive ray are launched preferably is not more than 10nm, more preferably no more than 5nm.
The example that can satisfy the organic photoelectric transition material of this condition comprises arlydene class organic compound, quinacridine ketone organic compound and phthalocyanines organic compound.For example, the absorption peak wavelength of quinacridone in visible-range is 560nm.Therefore, when with quinacridone as the organic photoelectric transition material and with CsI (Tl) when the fluorescent material, the difference of above-mentioned peak wavelength can be set in the 5nm scope, thereby the amount of the electric charge that produces can be increased to maximum substantially in the OPC film.
At least a portion that is arranged on the organic layer in bias electrode 26 and the charge collection electrode 27 can be formed by the OPC film.More specifically, described organic layer can prevent that stacked body or the mixture of part, electrode, interlayer contact improvement part etc. from forming by the part, photoelectric conversion section, electric transmission part, electron hole hop, electronic blocking part, electron hole stop portions, the crystallization that are used for electromagnetic wave absorption.
Preferably, organic layer contains organic p-type compound or organic N-shaped compound.Organic p-type semiconductor (compound) for mainly by the electron hole carry that organic compound represents to build organic semiconductor (compound), it refers to have the organic compound of the characteristic that is easy to provide electronics.In more detail, at two kinds of organic materials that are used for being in contact with one another, the material that will have low ionization potential is called to the build organic compound.Therefore, can with any organic compound as to the build organic compound, need only described organic compound and have the characteristic that electronics is provided.The example to the build organic compound that can use comprises triarylamine compound, benzidine compound, pyrazoline compounds, the styrylamine compound, hydrazone compound, the triphenyl methane compound, carbazole compound, polysilane compound, thiophene compound, phthalocyanine compound, cyanine compound, the merocyanine compound, oxonols (oxonol) compound, polyamine compounds, benzazolyl compounds, azole compounds, pyrazole compound, the polyarylene compound, fused aromatic carbocyclic compound (naphthalene derivatives, anthracene derivant, phenanthrene derivative, the aphthacene derivative, pyrene derivatives, the perylene derivative, fluoranthene derivative), has nitrogen-containing heterocycle compound as metal complex of part etc.Be not limited to this for the build organic semiconductor, but can be with ionization potential than being used as to the build organic semiconductor as the low any organic compound of the organic compound of N-shaped (receptor type) compound.
The receptor type organic semiconductor (compound) of N-shaped organic semiconductor (compound) for mainly being represented by the electron transport organic compound, it refers to have the organic compound that is easy to connect nucleophobic characteristic.More specifically, when using two kinds of organic compounds in the mode that is in contact with one another, a kind of compound that has higher electron affinity in these two kinds of organic compounds is the receptor type organic compound.Therefore, can be with any organic compound as the receptor type organic compound, as long as described organic compound has and connects nucleophobic characteristic.The example comprises fused aromatic carbocyclic compound (naphthalene derivatives, anthracene derivant, phenanthrene derivative, aphthacene derivative, pyrene derivatives, perylene derivative, fluoranthene derivative), contain nitrogen-atoms, oxygen atom or sulphur atom 5～7 membered heterocyclic compounds (for example, pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, quinoxaline, quinazoline, phthalazines, cinnolines, isoquinolin, pteridine, acridine, azophenlyene, phenanthrolene, tetrazolium, pyrazoles, imidazoles, thiazole,
Azoles, indazole, benzimidazole, BTA, benzo
Azoles, benzothiazole, carbazole, purine, Triazolopyridazines, triazolo pyrimidine, four benzazoles,
Diazole, imidazopyridine, pyrrolidines (pyralidine), pyrrolopyridine, thiadiazoles and pyridine, dibenzazepines, three benzo azepines etc.), polyarylene compound, fluorene compound, cyclopentadiene compound, silyl compound and have nitrogen-containing heterocycle compound as the metal complex of part.The receptor type organic semiconductor is not limited to this.Can be with any organic compound as the receptor type organic semiconductor, as long as the electron affinity of described organic compound is higher than as the organic compound to the build organic compound.
As for p-type organic dyestuff or N-shaped organic dyestuff, can use any known dye.Its preferred embodiment comprise cyanine dyes, styryl dye, hemicyanine dye, merocyanine dyes (comprise zero-methine merocyanine (simple merocyanine) if, three nuclear merocyanine dyes, the four nuclear red cyanines of merocyanine dyes (rhodacyanine) dyestuffs, compound cyanine dyes, composite part cyanine dye, alopolar dyestuff, oxonol dye, half oxonols (hemioxonol) dyestuff, side's acid
Dyestuff, crocic acid
(croconium) dyestuff, the azepine methine dyes, coumarine dye, arylidene dyestuff, anthraquinone dye, triphenhlmethane dye, azo dyes, azomethine dyes, spiro-compound, the metallocene dyestuff, the Fluorenone dyestuff, fulgide (flugide) dyestuff, perylene dyes, phenazine dyes, the phenthazine dyestuff, the quinone dyestuff, indigoid, diphenylmethane dye, the polyenoid dyestuff, acridine dye, the acridone dyestuff, the diphenylamines dyestuff, the quinacridone dyestuff, the quinophthalone dyestuff, fen
Piperazine dyestuff, Tai perylene dyestuff, porphyrin dye, chlorophyll dyestuff, phthalocyanine dye, metal complex dyes and fused aromatic carbocyclic ring dyestuff (naphthalene derivatives, anthracene derivant, phenanthrene derivative, aphthacene derivative, pyrene derivatives, perylene derivative, fluoranthene derivative).
Can preferably use following opto-electronic conversion film (photosensitive layer), it has p-type semiconductor layer and N-shaped semiconductor layer between pair of electrodes, and at least a in p-type semiconductor and the N-shaped semiconductor is organic semiconductor, and arranges between these semiconductor layers and comprise p-type semiconductor and the semi-conductive body heterojunction structure sheaf of N-shaped with as the intermediate layer.Be included in short this defective of carrier diffusion length that body heterojunction structure sheaf in the opto-electronic conversion film can cover organic layer.Thus, can improve photoelectric conversion efficiency.In JP-A-2005-303266, the body heterojunction structure is had been described in detail.
Be derived from the viewpoint of the light of luminescent coating from absorption, preferably, the opto-electronic conversion film is thicker.Do not consider and can bring to separation of charge the ratio of any contribution, described opto-electronic conversion film is preferably more than the 30nm and below the 300nm, more preferably more than the 50nm and below the 250nm, especially more preferably more than the 80nm and below the 200nm.
As for any other structures about above-mentioned OPC film, for example with reference to the description among the JP-A-2009-32854.
[switching device]
Can with for example in JP-A-2009-212389 disclosed any organic material be used for the active layer of each switching device 24.Although organic tft can have any one structure, field-effect transistor (FET) structure most preferably.In the FET structure, in the part of the upper surface of dielectric base grid is set, and arrange insulator layer with cover described electrode and with electrode outside other parts in substrate contact.In addition, at the upper surface of insulator layer semiconductor active layer is set, and on the part of the upper surface of semiconductor active layer, arranges transparent source electrode and transparent drain electrode in the mode that is spaced from each other certain distance.This structure is called top contact-type device.Yet, also can preferably use wherein at the bottom of semiconductor active layer arranged beneath source electrode and drain electrode contact-type device.In addition, the vertical transistor structures that can use charge carrier wherein to flow at the thickness direction of organic semiconductor film.
(active layer)
The organic semiconducting materials of mentioning herein is for showing the organic material as semi-conductive performance.With the semiconductor type that is formed by inorganic material seemingly, the example of organic semiconducting materials comprises that conduction is as the p-type organic semiconducting materials (or be called for short and make the p-type material or be called the electron hole to carry material) of the electron hole (hole) of charge carrier and the conduction N-shaped organic semiconducting materials (or be called for short and make the N-shaped material or be called electron transport materials) as the electronics of charge carrier.In organic semiconducting materials, many p-type materials show good performance usually.In addition, under atmosphere, as transistor, the p-type transistor has excellent operation stability usually.Therefore, will describe the p-type organic semiconducting materials herein.
One of performance of OTFT is carrier mobility (also be called for short and make mobility) μ, the mobility of its expression charge carrier in organic semiconductor layer.Although preferred mobility varies depending on the application, usually preferred higher mobility.Described mobility is preferably 1.0 * 10
-7Cm
2More than/the Vs, more preferably 1.0 * 10
-6Cm
2More than/the Vs, further preferred 1.0 * 10
-5Cm
2More than/the Vs.By the performance when making field-effect transistor (FET) device or the measurement of TOF (flight time), can obtain mobility.
The p-type organic semiconducting materials can be low-molecular-weight or high molecular weight material, but preferred low molecular weight material.Many low molecular weight material are easy to obtain high-purity or are easy to the orderly crystal structure of height of formation because it has fixing molecular structure such as distillation purification, recrystallization, column chromatography etc. because using various methods of purification, thereby usually show excellent character.The molecular weight of low molecular weight material is preferably more than 100 and below 5000, more preferably more than 150 and below 3000, also more preferably more than 200 and below 2000.
As this p-type organic semiconducting materials, but there are phthalocyanine compound or naphthalene cyanine compound in illustration ground.Its instantiation of following demonstration.M represents metallic atom, and Bu represents butyl, and Pr represents propyl group, and Et represents ethyl, and Ph represents phenyl.
| Compound | M | R | n | R’ | R” | |
| 1 | Si | OSi(n-Bu) 3 | 2 | | H | |
| 2 | Si | OSi(i-Pr) 3 | 2 | | H | |
| 3 | Si | OSi(OEt) 3 | 2 | | H | |
| 4 | Si | OSiPh 3 | 2 | | H | |
| 5 | Si | O(n-C 8H 17) | 2 | H | H | |
| 7 | Ge | OSi(n-Bu) 3 | 2 | H | H | |
| 8 | Sn | OSi(n-Bu) 3 | 2 | H | H | |
| 9 | Al | OSi(n-C 6H 13) 3 | 1 | | H | |
| 10 | Ga | OSi(n-C 6H 13) 3 | 1 | | H | |
| 11 | Cu | - | - | O(n-Bu) | H | |
| 12 | Ni | - | - | O(n-Bu) | |
|
| 13 | Zn | - | - | H | t-Bu | |
| 14 | V=O | - | - | H | t-Bu | |
| 15 | H 2 | - | - | H | t-Bu | |
| 16 | Si | OSiEt 3 | 2 | - | - | |
| 17 | Ge | OSiEt 3 | 2 | - | - | |
| 18 | Sn | OSiEt 3 | 2 | - | - | |
| 19 | Al | OSiEt 3 | 1 | - | - | |
| 20 | Ga | OSiEt 3 | 1 | - | - |
(composed component of the switching device outside the active layer)
The material that forms grid, source electrode or drain electrode is not particularly limited, as long as it has the conductivity that needs.The example comprises transparent conductive oxide such as ITO (tin oxide that indium mixes), IZO (zinc oxide that indium mixes), SnO
2, ATO (antimony mix tin oxide), ZnO, AZO (zinc oxide that aluminium mixes), GZO (zinc oxide that gallium mixes), TiO
2, FTO (fluorine mix tin oxide) etc.; Transparent conductive polymer such as PEDOT/PSS (poly-(3,4-ethylidene dioxy base thiophene)/PSS); Material with carbon element such as carbon nano-tube etc.Such as by vacuum deposition method, sputter, solution coat method etc., these electrode materials can be formed film.
The material that is used for insulating barrier is not particularly limited, as long as it has the insulation effect that needs.The example comprises inorganic material such as silicon dioxide, silicon nitride, aluminium oxide etc.; With organic material such as polyester (PEN (PEN), PET (PETG) etc.), Merlon, polyimides, polyamide, polyacrylate, epoxy resin, poly-p-xylylene resin, novolac resin, PVA (polyvinyl alcohol), PS (polystyrene) etc.Such as by vacuum deposition method, sputter, solution coat method etc., these insulating film materials can be formed film.
As for any other structures about above-mentioned organic tft, for example with reference to the description among the JP-A-2009-212389.
In addition, for example, disclosed amorphous oxide in JP-A-2010-186860 can be used for the active layer of switching device 28.The disclosed transistorized active layer of FET that comprises amorphous oxide in JP-A-2010-186860 is described herein.Described active layer serves as the transistorized channel layer of FET that electronics wherein or hole can be moved.
Active layer is set to comprise amorphous oxide semiconductor.Can at low temperatures amorphous oxide semiconductor be formed film.Thus, can preferably form amorphous oxide semiconductor in flexible substrates.The amorphous oxide semiconductor that is used for active layer is preferably the amorphous oxide that comprises at least a element that is selected from In, Sn, Zn and Cd, more preferably comprise the amorphous oxide that is selected from least a element among In, Sn and the Zn, further preferably comprise the amorphous oxide that is selected from least a element among In and the Zn.
The instantiation that is used for the amorphous oxide of active layer comprises In
2O
3, ZnO, SnO
2, CdO, indium-zinc-oxide (IZO), indium-Xi-oxide (ITO), gallium-zinc-oxide (GZO), indium-gallium-oxide (IGO) and indium-gallium-zinc-oxide (IGZO).
Preferably, will become embrane method to be used as to be used to form with the polycrystalline sintered body of oxide semiconductor the method for active layer as the gas phase of target.Become in the embrane method in gas phase, sputtering method or pulsed laser deposition (PLD) method is fit to.In addition, consider preferred sputtering method from mass production.For example, under steered vacuum degree and controlled oxygen flow, form active layer by RF magnetron sputtering deposition method.
By known X-ray diffraction method, the active layer that can confirm to form film is amorphous membrance.Obtained the ratio of components of active layer by RBS (Rutherford backscattering spectrum) method.
In addition, the conductivity of active layer is preferably and is lower than 10
2Scm
-1And be not less than 10
-4Scm
-1, more preferably less than 10
2Scm
-1And be not less than 10
-1Scm
-1The known embodiment of method of be used for regulating the conductivity of active layer comprises the adjusting method of utilizing oxygen defect, the adjusting method of utilizing ratio of components, the adjusting method of utilizing impurity and the adjusting method of utilizing oxide semiconductor material.
As for any other structures about above-mentioned amorphous oxide, for example with reference to the explanation among the JP-A-2010-186860.
[dielectric base]
As dielectric base 20, for example can use the plastic film with excellent light transmittance.As plastic film, can select the film of being made by following: PETG (PET), PEN (PEN), polyether sulfone (PES), Polyetherimide, polyether-ether-ketone, polyphenylene sulfide, Merlon (PC), cellulosic triacetate (TAC), cellulose ethanoate propionic ester (CAP), polyimides, polyarylate, biaxial stretch-formed polystyrene (OPS) etc.This plastic film can contain the organic or inorganic filler.Can suitably use the flexible substrates of being made by for example aromatic polyamides and biological nano fiber that has such as flexible, low-thermal-expansion and high-intensity performance, described performance is can not obtain by existing glass or plastics.Wherein, can suitably use polyarylate (glass transition temperature: about 193 ℃), biaxial stretch-formed polystyrene (decomposition temperature: 250 ℃), polyimides (glass transition temperature: about 300 ℃) and aromatic polyamides (glass transition temperature: about 315 ℃), they all have heat resistance.As a result, can on dielectric base, directly form scintillator.
(aromatic polyamides)
Described aromatic polyamides material have high heat resistance namely 315 ℃ glass transition temperature, Young's modulus that high rigidity is 10GPa and high-dimensional stability namely-coefficient of thermal expansion of 3ppm/ ℃～5ppm/ ℃.Therefore, when using the film of being made by the aromatic polyamides material, compare with the situation of using conventional resin molding, can be easily with high-quality formation semiconductor layer.Because the high heat resistance of aromatic polyamides material, electrode material can at high temperature solidify and have low resistance.The film of aromatic polyamides material can be dealt with the IC Auto-mounting that comprises solder reflow process.Because the thermal coefficient of expansion of the film of being made by the aromatic polyamides material is near the thermal coefficient of expansion of indium tin oxide (ITO), gas barrier film and substrate of glass, so film less warpage after making of being made by the aromatic polyamides material.Described film is difficult to fracture., consider the preferred not halogen-containing halogen aromatic polyamides material (being applicable to the regulations of JPCA-ES01-2003) that uses herein from reducing environmental loads.Described aromatic polyamides film can be stacking with substrate of glass or PET substrate, perhaps is adhered on the housing of device.
By because using MOLECULE DESIGN between the aromatic polyamides molecule, to have high cohesion (HYDROGEN BOND INTENSITY) aromatic polyamides of low solubility being dissolved in the solvent, can adopt aromatic polyamides easily to be shaped to colourless, transparent and thin film and can suitably to be used.By being used for order and the replacement species on the aromatic ring and the MOLECULE DESIGN of position of control monomeric unit, can realize having the easy moulding of good solubility, and keeping simultaneously having high linear rodlike molecule structure, described high linearity causes high rigidity or the dimensional stability of aromatic polyamides material.Can realize not halogen-containing by MOLECULE DESIGN.
Can also suitably use the aromatic polyamides material that direction has optkmal characteristics in the face of film.By the stretched vertically that is controlled at solution casting, between the film shaping period, successively changes according to the aromatic polyamides film-strength and the stretching condition at each technique place in the horizontal stretch, can be equilibrated at the feature on the direction in the face of aromatic polyamides film, described film has the rodlike molecule structure and is easy to change into anisotropy aspect physical property.
Particularly, in solution casting technique, by the rate of drying of control solvent, will be in face the physical property on the thickness direction become isotropism and so that contain solvent film strength and with the peel strength optimization of foundry goods and drum.In stretched vertically technique, the film-strength and the stretching condition that change with the solvent residue that successively changes during stretching are accurately controlled.In horizontal stretch technique, to controlling with the horizontal stretch condition that changes by the film-strength that heats change with for the horizontal stretch condition that alleviates the film residual stress.By using the aromatic polyamides material, can solve the curling problem of aromatic polyamides film generation after moulding.
Owing to only have aromatic polyamides to have the rodlike molecule structure, described rodlike molecule structure has high as far as possible linearity in the design of being convenient to as mentioned above moulding or the design aspect that is used for the feature on the direction in the balance face, so thermal coefficient of expansion can be remained low.Stretching condition in the time of can also making film by change further reduces thermal coefficient of expansion.
(biological nano fiber)
Can use nanofiber so that transparent flexible resin is strengthened, can not cause light scattering because compare enough little component with optical wavelength.In nanofiber, the cellulose microfibers bundle of being made by bacterium (Acetobacter, acetobacter xylinum) has the size of width He the about visible wavelength 1/10 of 50nm, but has the feature of high strength, high resiliency and low-thermal-expansion.Therefore, can suitably use the composite material (can be called " biological nano fiber ") of bacteria cellulose and transparent resin.
By dipping in the bacteria cellulose sheet and solidify transparent resin such as for example acrylic resin and epoxy resin, can obtain under the 500nm wavelength, showing about 90% light transmittance and simultaneously with about 60～70% the transparent organism nanofiber that contains at high proportion fiber.Utilize the biological nano fiber, the low thermal coefficient of expansion that can realize to compare with silicon crystal (about 3ppm～7ppm) and intensity (about 460MPa) and high resiliency (about 30GPa) on molten steel is flat.About the structure of above-mentioned biological nano fiber, for example, can be with reference to the disclosure of TOHKEMY 2008-34556.
As mentioned above, this specification discloses the Radiological image detection of following (1)～(14) and discloses the method for the manufacturing Radiological image detection of following (15)～(18).
(1) a kind of Radiological image detection comprises:
Radiation image conversion panel, the substrate that it comprises scintillator and supports described scintillator, described scintillator is included in the fluorophor that produces fluorescence when being exposed to radioactive ray;
Sensor panel, the substrate that it comprises pel array and supports described pel array, described pel array is to arrange and to detect the fluorescence that produces from described scintillator with the mode of described scintillator close contact; With
Sealant, its be arranged between the substrate of the substrate of described radiation image conversion panel and described sensor panel and surround described scintillator and described pel array with at the inboard insulating space that forms of described sealant,
Wherein said scintillator comprises cylindrical portion, and described cylindrical portion comprises the column crystal group that the crystal by the described fluorophor of growing with columnar shape forms,
Do not arrange surface by one group of pointed tip configuration of described column crystal not to be adhered to mode on the described pel array with described pel array close contact,
The substrate of described radiation image conversion panel and the substrate of described sensor panel are both flexible, and
Described insulating space is depressurized.
(2) Radiological image detection of above-mentioned (1), wherein
A substrate in the substrate of described radiation image conversion panel and the substrate of described sensor panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, and another substrate is the second substrate that is arranged on the described radioactive ray light incident side, and
Described the first substrate comprises stacking a plurality of basic materials, and described basic material comprises the first foundation material with the surface that is furnished with described scintillator or described pel array on it.
(3) Radiological image detection of above-mentioned (2), wherein said sealant arrangement are in described a plurality of basic materials between another basic material except described first foundation material and described the second substrate.
(4) Radiological image detection of above-mentioned (3), described another basic material in wherein said first foundation material and the described a plurality of basic material except described first foundation material utilizes detachable adhesive mutually bonding, and the bonding strength of described detachable adhesive can descend because of energy exposure.
(5) each Radiological image detection in above-mentioned (1)～(4), wherein said sealant is detachable adhesive, the bonding strength of described detachable adhesive can descend because of energy exposure.
(6) each Radiological image detection in above-mentioned (1)～(5) wherein forms each tip of described column crystal with the pointed cone shape.
(7) Radiological image detection of above-mentioned (6), each tip of wherein said column crystal has 40 °～80 ° drift angle.
(8) Radiological image detection of above-mentioned (6) or (7) wherein is filled with filler between the tip of described column crystal.
(9) Radiological image detection of above-mentioned (8), wherein said scintillator is coated with the moisture resistance diaphragm, and
The refractive index of described filler is less than the refractive index of described diaphragm.
(10) Radiological image detection of above-mentioned (8) or (9), wherein said filler are at least a resins that is selected from phenol resin, carbamide resin, melmac, unsaturated polyester resin, epoxy resin and the diallyl phthalate resin.
(11) each Radiological image detection in above-mentioned (1)～(10), the various substrates in the substrate of wherein said radiation image conversion panel and the substrate of described sensor panel are flexible glass substrate.
(12) each Radiological image detection in above-mentioned (1)～(11), each pixel in the wherein said pel array is set to comprise organic photoelectric converter, and described organic photoelectric converter comprises the photoconductive layer of organic opto-electronic conversion film.
(13) each Radiological image detection in above-mentioned (1)～(12), the substrate of wherein said radiation image conversion panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, and the substrate of described sensor panel is the second substrate that is arranged on the described radioactive ray light incident side.
(14) Radiological image detection of above-mentioned (2), the substrate of wherein said radiation image conversion panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, the substrate of described sensor panel is the second substrate that is arranged on the described radioactive ray light incident side, and described scintillator is arranged on the surface of described first foundation material.
(15) a kind of method of making the Radiological image detection of above-mentioned (1) comprises:
Make described radiation image conversion panel and described sensor panel overlapping, make simultaneously described scintillator and described pel array mutually in the face of and between the substrate of the substrate of wanting bonding described radiation image conversion panel and described sensor panel, described sealant is set; With
The described insulating space that forms between the substrate of the substrate of described radiation image conversion panel and described sensor panel is reduced pressure so that described scintillator and the mutual close contact of described pel array and mutually non-adhesive by described sealant.
(16) a kind of manufacturing is above-mentioned, the method of Radiological image detection (1), a substrate in the substrate of wherein said radiation image conversion panel and the substrate of described sensor panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, another substrate is the second substrate that is arranged on the described radioactive ray light incident side, and described the first substrate comprises stacking a plurality of basic materials, described basic material comprises the first foundation material on the surface that is furnished with described scintillator or described pel array on it
Described method comprises:
Make described first foundation material and described the second substrate overlapping, described scintillator and described pel array are faced mutually;
So that another basic material except described first foundation material and described first foundation material and described the second substrate are overlapping in described a plurality of basic material, adhesive are being set between described first foundation material and another basic material and between described another basic material and described the second substrate, described sealant are being set simultaneously; With
The described insulating space that forms between described another basic material and described the second substrate is reduced pressure so that described scintillator and the mutual close contact of described pel array and mutually non-adhesive by described sealant.
(17) method of above-mentioned (1), wherein said adhesive are detachable adhesive, and the bonding strength of described detachable adhesive can descend because of energy exposure.
(18) each method in above-mentioned (15)～(17), wherein said sealant is detachable adhesive, the bonding strength of described detachable adhesive can descend because of energy exposure.
Claims (19)
1. Radiological image detection comprises:
Radiation image conversion panel, the substrate that it comprises scintillator and supports described scintillator, described scintillator is included in the fluorophor that produces fluorescence when being exposed to radioactive ray;
Sensor panel, the substrate that it comprises pel array and supports described pel array, described pel array to be arranging with the mode of described scintillator close contact, and detects the fluorescence that produces from described scintillator; With
Sealant, it is arranged between the substrate of the substrate of described radiation image conversion panel and described sensor panel, and surrounds described scintillator and described pel array forms insulating space with the inboard at described sealant,
Wherein said scintillator comprises cylindrical portion, and described cylindrical portion comprises the column crystal group that the crystal by the described fluorophor of growing with columnar shape forms,
Do not arrange surface by one group of pointed tip configuration of described column crystal not to be adhered to mode on the described pel array with described pel array close contact,
The substrate of described radiation image conversion panel and the substrate of described sensor panel are both flexible, and
Described insulating space is depressurized.
2. the Radiological image detection of claim 1, wherein
A substrate in the substrate of described radiation image conversion panel and the substrate of described sensor panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, and another substrate is the second substrate that is arranged on the described radioactive ray light incident side, and
Described the first substrate comprises stacking a plurality of basic materials, and described basic material comprises the first foundation material, is furnished with described scintillator or described pel array on the surface of described first foundation material.
3. the Radiological image detection of claim 2, wherein said sealant arrangement are in described a plurality of basic materials between another basic material except described first foundation material and described the second substrate.
4. the Radiological image detection of claim 3, described another basic material in wherein said first foundation material and the described a plurality of basic material except described first foundation material utilizes detachable adhesive mutually bonding, and the bonding strength of described detachable adhesive descends by energy exposure.
5. the Radiological image detection of claim 1, wherein said sealant is detachable adhesive, the bonding strength of described detachable adhesive descends by energy exposure.
6. the Radiological image detection of claim 1 wherein forms each tip of described column crystal with the pointed cone shape.
7. the Radiological image detection of claim 6, each tip of wherein said column crystal has 40 °～80 ° drift angle.
8. the Radiological image detection of claim 6 wherein is filled with filler between the described tip of described column crystal.
9. the Radiological image detection of claim 8, wherein said scintillator is coated with the moisture resistance diaphragm, and
The refractive index of described filler is less than the refractive index of described diaphragm.
10. the Radiological image detection of claim 8, wherein said filler is at least a resin that is selected from phenol resin, carbamide resin, melmac, unsaturated polyester resin, epoxy resin and the diallyl phthalate resin.
11. the Radiological image detection of claim 1, each substrate in the substrate of wherein said radiation image conversion panel and the substrate of described sensor panel is flexible glass substrate.
12. the Radiological image detection of claim 1, each pixel in the wherein said pel array is set to comprise organic photoelectric converter, and described organic photoelectric converter comprises the photoconductive layer of organic opto-electronic conversion film.
13. the Radiological image detection of claim 1, the substrate of wherein said radiation image conversion panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, and the substrate of described sensor panel is the second substrate that is arranged on the described radioactive ray light incident side.
14. the Radiological image detection of claim 2, the substrate of wherein said radiation image conversion panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, the substrate of described sensor panel is the second substrate that is arranged on the described radioactive ray light incident side, and described scintillator is arranged on the surface of described first foundation material.
15. a method of making the Radiological image detection of claim 1 comprises:
Make described radiation image conversion panel and described sensor panel overlapping, described scintillator and described pel array are faced mutually, and between the substrate of the substrate of wanting bonding described radiation image conversion panel and described sensor panel, described sealant is set; And
By described sealant the described insulating space that forms between the substrate of the substrate of described radiation image conversion panel and described sensor panel is reduced pressure, so that described scintillator and the mutual close contact of described pel array and mutually non-adhesive.
16. method of manufacturing the Radiological image detection of claim 1, a substrate in the substrate of wherein said radiation image conversion panel and the substrate of described sensor panel is the first substrate that is arranged on the opposition side of radioactive ray light incident side, another substrate is the second substrate that is arranged on described radioactive ray light incident side, and described the first substrate comprises stacking a plurality of basic materials, described basic material comprises the first foundation material, on the surface of described first foundation material, be furnished with described scintillator or described pel array
Described method comprises:
Make described first foundation material and described the second substrate overlapping, described scintillator and described pel array are faced mutually;
Make in described a plurality of basic material another basic material except described first foundation material and described first foundation material and described the second substrate overlapping, simultaneously between described first foundation material and described another basic material, adhesive is set, and between described another basic material and described the second substrate, described sealant is set; And
By described sealant the described insulating space that forms between described another basic material and described the second substrate is reduced pressure, so that described scintillator and the mutual close contact of described pel array and mutually non-adhesive.
17. the method for claim 16, wherein said adhesive are detachable adhesive, the bonding strength of described detachable adhesive descends by energy exposure.
18. the method for claim 15, wherein said sealant are detachable adhesive, the bonding strength of described detachable adhesive descends by energy exposure.
19. the method for claim 16, wherein said sealant are detachable adhesive, the bonding strength of described detachable adhesive descends by energy exposure.
Applications Claiming Priority (2)
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|---|---|---|---|
| JP2011188048A JP2013050364A (en) | 2011-08-30 | 2011-08-30 | Radiation image detector |
| JP2011-188048 | 2011-08-30 |
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|---|---|
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| CN102969322B CN102969322B (en) | 2017-04-26 |
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|---|---|
| US (1) | US9255997B2 (en) |
| JP (1) | JP2013050364A (en) |
| CN (1) | CN102969322B (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN102969322B (en) | 2017-04-26 |
| JP2013050364A (en) | 2013-03-14 |
| US9255997B2 (en) | 2016-02-09 |
| US20130048864A1 (en) | 2013-02-28 |
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