CN102945909A - 一种全空间白光led器件 - Google Patents

一种全空间白光led器件 Download PDF

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CN102945909A
CN102945909A CN2012104432132A CN201210443213A CN102945909A CN 102945909 A CN102945909 A CN 102945909A CN 2012104432132 A CN2012104432132 A CN 2012104432132A CN 201210443213 A CN201210443213 A CN 201210443213A CN 102945909 A CN102945909 A CN 102945909A
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led
boron nitride
quartz substrate
thin film
light
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CN102945909B (zh
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杨杭生
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Hangzhou Tianzhu Science & Technology Co Ltd
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Hangzhou Tianzhu Science & Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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Abstract

本发明公开的全空间白光LED器件包括石英衬底，在石英衬底的一面有荧光粉胶，石英衬底的另一面有立方氮化硼薄膜，立方氮化硼薄膜上罩反射碗形成密闭腔，腔内有n个并联或串联的LED芯片固定在立方氮化硼薄膜上，n≥1，LED芯片的两个电极用导线引出腔外，腔外设有与立方氮化硼薄膜连接的散热器。该LED器件结构简单，利用石英和立方氮化硼的透光性，使芯片双面出光，并且采用反射碗将背面的出光和从荧光粉胶表面反射回来的反射光，重新反射到荧光粉胶层，降低光损耗，提高了LED的发光效率。且利用立方氮化硼薄膜的高热导率和石英片的低热导率，可防止荧光粉胶加热劣化，延长使用寿命。

Description

一种全空间白光LED器件
技术领域
本发明涉及一种LED光源器件，尤其是一种利用生长有立方氮化硼薄膜的石英衬底将荧光粉胶和芯片分离的全空间白光LED器件。
背景技术
发光二级管（LED），被认为是继白炽灯、荧光灯、高强度气体放电灯之后的***光源。
传统的LED将芯片安装在一个具有散热辅助设计的电路板上，然后，将荧光粉胶直接覆盖在LED芯片上。因为电路板不透光，LED只能单面出光，直接降低了LED的出光效率。与此同时，从芯片单面发出的光，有接近一半的光，被荧光粉胶反射回来，进一步减弱了LED的光输出。并且反射光被吸收，引发芯片等的进一步发热升温的副作用。
发明内容
鉴于现有技术存在的不足，本发明的目的是提供一种有利于提高发光效率的全空间白光LED器件。
本发明的全空间白光LED器件包括石英衬底，在石英衬底的一面有荧光粉胶，石英衬底的另一面有立方氮化硼薄膜，立方氮化硼薄膜上罩反射碗形成密闭腔，腔内有n个并联或串联的LED芯片固定在立方氮化硼薄膜上，n≥1，LED芯片的两个电极用导线引出腔外，腔外设有与立方氮化硼薄膜连接的散热器。
本发明中，所述的LED芯片可以是蓝宝石基氮化镓二极管发光芯片、碳化硅基氮化镓二极管发光芯片或硅基氮化镓二极管发光芯片。所述的荧光粉胶可以是添加有荧光粉的环氧树脂、硅胶或聚碳酸酯。
上述的石英衬底上的立方氮化硼薄膜可以采用CN1850589和CN101565822的方法生长获得。
本发明的全空间LED器件结构简单，利用石英和立方氮化硼的透光性，使芯片双面出光，并且采用反射碗将背面的出光和从荧光粉胶表面反射回来的反射光，重新反射到荧光粉胶层，降低光损耗，提高了LED的发光效率。且利用立方氮化硼薄膜的高热导率和石英片的低热导率，可防止荧光粉胶加热劣化，延长使用寿命。
附图说明
图1是LED器件的示意图； 
图中：1为LED芯片；2为立方氮化硼薄膜；3为石英衬底；4导线；5荧光粉胶；6为反射碗；7电极；8散热器。
具体实施方式
以下结合附图对本发明作进一步描述。
参照图1，本发明的全空间白光LED器件包括石英衬底3，在石英衬底3的一面涂覆有荧光粉胶5，荧光粉胶的厚度可以根据不同的需要调整，石英衬底3的另一面采用CN1850589或CN101565822的方法生长有立方氮化硼薄膜2，在立方氮化硼薄膜2上罩反射碗6形成密闭腔，腔内有n个并联或串联的LED芯片1采用透明导热胶固定在立方氮化硼薄膜2上，n≥1，图例为一个LED芯片，，LED芯片可以正装、也可以倒装。LED芯片的两个电极7用导线4引出腔外，腔外设有与立方氮化硼薄膜2连接的散热器8。，LED芯片工作时产生的热量，通过立方氮化硼薄膜将热量传到外部散热器上，并利用石英衬底绝热层，防止荧光粉胶的高温劣化，提升LED的发光效率，延长使用寿命。该全空间白光LED器件上的荧光粉胶和发光芯片分离，利用反射碗将背面的出光和从荧光粉胶表面反射回来的反射光，重新反射到荧光粉胶，降低光损耗，提升LED的发光效率。
上述具体实施方式仅是本发明的具体实施例子，本发明不限于以上实施例子，在本发明的精神和权利要求的保护范围内，对本发明作出的任何修改和改变，均应认为是落入本发明的保护范围。

Claims (3)

1.一种全空间白光LED器件，其特征在于包括石英衬底（3），在石英衬底（3）的一面有荧光粉胶（5），石英衬底（3）的另一面有立方氮化硼薄膜（2），立方氮化硼薄膜（2）上罩反射碗（6）形成密闭腔，腔内有n个并联或串联的LED芯片（1）固定在立方氮化硼薄膜（2）上，n≥1，LED芯片（1）的两个电极（7）用导线（4）引出腔外，腔外设有与立方氮化硼薄膜（2）连接的散热器（8）。
2.根据权利要求书1所述的全空间白光LED器件，其特征在于所述的，LED芯片（1）是蓝宝石基氮化镓二极管发光芯片、碳化硅基氮化镓二极管发光芯片或硅基氮化镓二极管发光芯片。
3.根据权利要求书1所述的全空间白光LED器件，其特征在于所述的荧光粉胶（5）是添加有荧光粉的环氧树脂、硅胶或聚碳酸酯。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059781A (ja) * 2005-08-26 2007-03-08 Toyoda Gosei Co Ltd サブマウント付発光素子および発光装置
CN102339935A (zh) * 2010-07-15 2012-02-01 展晶科技(深圳)有限公司 覆晶式led封装结构
CN102427106A (zh) * 2011-11-09 2012-04-25 刘士民 一种反射式二极管发光装置的封装结构
CN202948968U (zh) * 2012-11-08 2013-05-22 杭州天柱科技有限公司 一种白光led器件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007059781A (ja) * 2005-08-26 2007-03-08 Toyoda Gosei Co Ltd サブマウント付発光素子および発光装置
CN102339935A (zh) * 2010-07-15 2012-02-01 展晶科技(深圳)有限公司 覆晶式led封装结构
CN102427106A (zh) * 2011-11-09 2012-04-25 刘士民 一种反射式二极管发光装置的封装结构
CN202948968U (zh) * 2012-11-08 2013-05-22 杭州天柱科技有限公司 一种白光led器件

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