CN102945909A - Total space white light LED (light emitting diode) device - Google Patents
Total space white light LED (light emitting diode) device Download PDFInfo
- Publication number
- CN102945909A CN102945909A CN2012104432132A CN201210443213A CN102945909A CN 102945909 A CN102945909 A CN 102945909A CN 2012104432132 A CN2012104432132 A CN 2012104432132A CN 201210443213 A CN201210443213 A CN 201210443213A CN 102945909 A CN102945909 A CN 102945909A
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- Prior art keywords
- led
- boron nitride
- quartz substrate
- thin film
- light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention discloses a total space white light LED (light emitting diode) device, which comprises a quartz substrate, wherein one surface of the quartz substrate is provided with phosphor adhesive, the other surface of the quartz substrate is provided with a three-dimensional boron nitride thin film, a sealing cavity is formed in the way that a reflective bowl covers the three-dimensional boron nitride thin film, the inside of the cavity is provided with n parallel or serial LED chips, the LED chips are fixedly arranged on the three-dimensional boron nitride thin film, n is greater than or equal to 1, two electrodes of each LED chip are led out of the cavity by conducting wires, and the outer side of the cavity is provided with a heat radiator connected with the three-dimensional boron nitride thin film. The LED device has the advantages that the structure is simple, both surfaces of the chips emit light by utilizing the transparence of the quartz and the three-dimensional boron nitride, the light emitted from the back side of the reflective bowl and the reflective light reflected from the surface of the phosphor adhesive are reflected to the phosphor adhesive layer, then the light loss is reduced, and the light emitting efficiency of the LED is improved; the high heat conductivity of the three-dimensional boron nitride thin film and the low heat conductivity of quartz sheets are utilized, so the heating deterioration of the phosphor adhesive is avoided, and the service life is prolonged.
Description
Technical field
The present invention relates to a kind of led light source device, especially a kind of quartz substrate of utilizing growth that cubic boron nitride film is arranged is separated phosphor gel with chip total space white light LED part.
Background technology
Light-Emitting Diode (LED), be considered to after incandescent lamp, fluorescent lamp, high-intensity gas discharge lamp the 4th generation light source.
Traditional LED with chip be installed in one have the heat radiation Computer Aided Design circuit board on, then, phosphor gel is directly overlayed on the led chip.Because circuit board is light tight, LED can only the single face bright dipping, has directly reduced the light extraction efficiency of LED.Meanwhile, from the light that the chip single face sends, the light near half is arranged, reflected by phosphor gel, further weakened the light output of LED.And reverberation is absorbed, the side effect of the further heating up of initiation chip etc.
Summary of the invention
Deficiency in view of prior art exists the purpose of this invention is to provide a kind of total space white light LED part that is conducive to improve luminous efficiency.
Total space white light LED part of the present invention comprises quartz substrate, one side in quartz substrate has phosphor gel, the another side of quartz substrate has cubic boron nitride film, cubic boron nitride film upper cover reverberation bowl forms closed chamber, there be n led chip in parallel or series connection to be fixed on the cubic boron nitride film in the chamber, n 〉=1, two electrodes of led chip are drawn outside the chamber with wire, are provided with the radiator that is connected with cubic boron nitride film outside the chamber.
Among the present invention, described led chip can be process for sapphire-based gallium nitride diode luminescence chip, silicon carbide-based gallium nitride diode luminescence chip or silicon based gallium nitride led lighting chip.Described phosphor gel can be epoxy resin, silica gel or the Merlon that is added with fluorescent material.
Cubic boron nitride film on the above-mentioned quartz substrate can adopt the method growth of CN1850589 and CN101565822 to obtain.
Total space LED device architecture of the present invention is simple, utilize the light transmission of quartzy and cubic boron nitride, make the chip double-side bright dipping, and adopt reverberation bowl with the bright dipping at the back side and the reverberation of returning from the phosphor gel surface reflection, again reflex to the fluorescent material glue-line, reduce light loss, improved the luminous efficiency of LED.And utilize the high heat conductance of cubic boron nitride film and the lower thermal conductivity of quartz plate, can prevent that the phosphor gel heating is deteriorated, increase the service life.
Description of drawings
Fig. 1 is the schematic diagram of LED device;
Among the figure: 1 is led chip; 2 is cubic boron nitride film; 3 is quartz substrate; 4 wires; 5 phosphor gel; 6 is reverberation bowl; 7 electrodes; 8 radiators.
Embodiment
The invention will be further described below in conjunction with accompanying drawing.
With reference to Fig. 1, total space white light LED part of the present invention comprises quartz substrate 3, one side in quartz substrate 3 is coated with phosphor gel 5, the thickness of phosphor gel can be according to different needs adjustment, the another side of quartz substrate 3 adopts the method growth of CN1850589 or CN101565822 that cubic boron nitride film 2 is arranged, form closed chamber at cubic boron nitride film 2 upper cover reverberation bowls 6, there be n led chip 1 in parallel or series connection to adopt transparent heat-conducting glue to be fixed on the cubic boron nitride film 2 in the chamber, n 〉=1, legend is a led chip,, led chip can formal dress, also can upside-down mounting.Two electrodes, the 7 usefulness wires 4 of led chip are drawn outside the chamber, are provided with the radiator 8 that is connected with cubic boron nitride film 2 outside the chamber., the heat that produces during led chip work passes to heat on the external heat sink by cubic boron nitride film, and utilizes the quartz substrate heat insulation layer, prevents that the high temperature of phosphor gel is deteriorated, promotes the luminous efficiency of LED, increases the service life.Phosphor gel on this total space white light LED part is separated with luminescence chip, utilizes reverberation bowl with the bright dipping at the back side and the reverberation of returning from the phosphor gel surface reflection, again reflexes to phosphor gel, reduces light loss, promotes the luminous efficiency of LED.
Above-mentioned embodiment only is specific embodiments of the invention; the invention is not restricted to above examples of implementation; in the protection range of spirit of the present invention and claim, to any modification and the change that the present invention makes, all should think to fall into protection scope of the present invention.
Claims (3)
1. total space white light LED part, it is characterized in that comprising quartz substrate (3), one side in quartz substrate (3) has phosphor gel (5), the another side of quartz substrate (3) has cubic boron nitride film (2), cubic boron nitride film (2) upper cover reverberation bowl (6) forms closed chamber, there be n led chip (1) in parallel or series connection to be fixed on the cubic boron nitride film (2) in the chamber, n 〉=1, two electrodes (7) of led chip (1) are drawn outside the chamber with wire (4), are provided with the radiator (8) that is connected with cubic boron nitride film (2) outside the chamber.
2. according to claims 1 described total space white light LED part, it is characterized in that describedly, led chip (1) is process for sapphire-based gallium nitride diode luminescence chip, silicon carbide-based gallium nitride diode luminescence chip or silicon based gallium nitride led lighting chip.
3. according to claims 1 described total space white light LED part, it is characterized in that described phosphor gel (5) is epoxy resin, silica gel or the Merlon that is added with fluorescent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210443213.2A CN102945909B (en) | 2012-11-08 | 2012-11-08 | Total space white light LED (light emitting diode) device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210443213.2A CN102945909B (en) | 2012-11-08 | 2012-11-08 | Total space white light LED (light emitting diode) device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102945909A true CN102945909A (en) | 2013-02-27 |
| CN102945909B CN102945909B (en) | 2015-05-20 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210443213.2A Active CN102945909B (en) | 2012-11-08 | 2012-11-08 | Total space white light LED (light emitting diode) device |
Country Status (1)
| Country | Link |
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| CN (1) | CN102945909B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007059781A (en) * | 2005-08-26 | 2007-03-08 | Toyoda Gosei Co Ltd | Submount-attached light emitting element and light emitting device |
| CN102339935A (en) * | 2010-07-15 | 2012-02-01 | 展晶科技(深圳)有限公司 | Flip-chip-type LED (light-emitting diode) package structure |
| CN102427106A (en) * | 2011-11-09 | 2012-04-25 | 刘士民 | Packaging structure of reflecting type diode light-emitting device |
| CN202948968U (en) * | 2012-11-08 | 2013-05-22 | 杭州天柱科技有限公司 | White light light-emitting diode (LED) device |
-
2012
- 2012-11-08 CN CN201210443213.2A patent/CN102945909B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007059781A (en) * | 2005-08-26 | 2007-03-08 | Toyoda Gosei Co Ltd | Submount-attached light emitting element and light emitting device |
| CN102339935A (en) * | 2010-07-15 | 2012-02-01 | 展晶科技(深圳)有限公司 | Flip-chip-type LED (light-emitting diode) package structure |
| CN102427106A (en) * | 2011-11-09 | 2012-04-25 | 刘士民 | Packaging structure of reflecting type diode light-emitting device |
| CN202948968U (en) * | 2012-11-08 | 2013-05-22 | 杭州天柱科技有限公司 | White light light-emitting diode (LED) device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102945909B (en) | 2015-05-20 |
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