CN102881736A - Compound semiconductor solar cell - Google Patents
Compound semiconductor solar cell Download PDFInfo
- Publication number
- CN102881736A CN102881736A CN2012103842642A CN201210384264A CN102881736A CN 102881736 A CN102881736 A CN 102881736A CN 2012103842642 A CN2012103842642 A CN 2012103842642A CN 201210384264 A CN201210384264 A CN 201210384264A CN 102881736 A CN102881736 A CN 102881736A
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- contact layer
- solar cell
- compound semiconductor
- semiconductor solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 150000001875 compounds Chemical class 0.000 title claims abstract description 20
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 13
- 238000003475 lamination Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 abstract description 19
- 229910052751 metal Inorganic materials 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000010931 gold Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a compound semiconductor solar cell, which is characterized in that a tunnel junction is inserted into a cell ohmic contact laminated layer, so that the conductivity type of the surface of the ohmic contact layer is changed. For an epitaxial structure, the tunnel junction inserted into the ohmic contact layer is thin, so that the epitaxial cost of the cell cannot be effectively increased; and in addition, the conductivity type of the surface of the cell ohmic contact layer is changed, so that cheap metal can be selected and used for manufacturing a cell chip electrode, namely the production cost of the solar cell is effectively reduced on the premise of ensuring the performance of the cell.
Description
Technical field
The invention belongs to the compound semiconductor area of solar cell, be specifically related to a kind of compound semiconductor solar cell.
Background technology
In the last few years, along with the further aggravation of energy crisis and ecological degeneration, developing novel renewable and clean energy resource had become people's production, life, kept the active demand of social sustainable development.Develop in recent years solar energy, photovoltaic power generation technology has attracted people's common concern, wherein the compound semiconductor solar cell reduces the space with its higher conversion efficiency and larger cost of electricity-generating, is acknowledged as the Ground Application generation technology of tool potentiality.Yet the solar cell power generation technology has too high cost of electricity-generating, hampers the quick commercialization process of this technology always.
Generally, at p-type Ge or GaAs Grown battery epitaxial loayer, the battery surface ohmic contact layer will be N-shaped GaAs layer, therefore in solar battery chip manufacturing process, usually need to use the noble metals such as AuGe, Au, Pt as metal electrode, obtaining preferably ohmic contact characteristic and lower series resistance, and then be conducive to improve the conversion efficiency of battery.For example, N-shaped GaAs and AuGeNi(are greater than 150nm)/the about 20nm of Au() can form preferably ohmic contact through after the short annealing.
Summary of the invention
The object of the present invention is to provide a kind of compound semiconductor solar cell, under the prerequisite that guarantees battery performance, can use comparatively cheap metal as the metal electrode of battery chip, thereby reduce the battery production cost.
According to a first aspect of the invention, a kind of compound semiconductor solar cell comprises a substrate, the battery active layer, the ohmic contact lamination is characterized in that: insert a tunnel junctions in the described ohmic contact lamination, thereby change the conduction type of ohmic contact stack surface.
Further, described ohmic contact lamination is comprised of the first ohmic contact layer, the second ohmic contact layer, the 3rd ohmic contact layer and the 4th ohmic contact layer, wherein the second ohmic contact layer and the 3rd ohmic contact layer consist of tunnel junctions jointly, the first ohmic contact layer is consistent with the second ohmic contact layer conduction type, and the 3rd ohmic contact layer is consistent with the 4th ohmic contact layer conduction type.
Among the present invention, in the battery of common p-type Ge or GaAs Grown, by in ohmic contact layer, inserting a tunnel junctions, thereby change the conduction type on ohmic contact layer surface, be that the ohmic contact layer surface is p-type electric-conducting, the metal of P type semiconductor electric conducting material and lower cost is processed through short annealing can obtain better ohmic contact, such as p-type GaAs and Ti(＜20nm)/about 20nm of Au() can obtain preferably ohmic contact and lower contact resistance through after the short annealing, thereby solved in the conventional solar cell chip manufacturing process and needed to use AuGe, Au, the noble metals such as Pt have reduced the battery electrode cost as metal electrode.
According to a second aspect of the invention, the present invention also provides a kind of solar energy luminous system, and it is equipped with the aforesaid compound semiconductor solar cell.
Other features and advantages of the present invention will be set forth in the following description, and, partly from specification, become apparent, perhaps understand by implementing the present invention.Purpose of the present invention and other advantages can realize and obtain by specifically noted structure in specification, claims and accompanying drawing.
Description of drawings
Fig. 1 is the full structure of GaInP/GaAs/Ge three junction batteries on the conventional p-type Ge substrate.
Fig. 2 is the full structure of GaInP/GaAs/Ge three junction batteries on the p-type Ge substrate provided by the present invention.
Each label represents among the figure:
The full structure of GaInP/GaAs/Ge three junction batteries on the 100:p type Ge substrate
101:n type GaAs ohmic contact layer
The 102:AuGeNi/Au metal electrode
201:n type GaAs the first ohmic contact layer
202:n+ type GaAs the second ohmic contact layer
203:p+ type GaAs the 3rd ohmic contact layer
204:p type GaAs the 4th ohmic contact layer
The 205:Ti/Au metal electrode.
Embodiment
The invention will be further described below in conjunction with embodiment.
In existing chemical combination half semiconductor solar cell, usually with the p-type material as growth substrates, such as p-type Ge substrate, p-type GaAs substrate or p-type InP substrate.Take the GaInP/GaAs/Ge three-joint solar cell as example, be generally the full structure 100 of extension formation GaInP/GaAs/Ge three junction batteries on p-type Ge substrate such as it, continue afterwards extension and form N-shaped GaAs ohmic contact layer 101, its doping content is 5 * 10
18/ cm
3, GaInP/GaAs/Ge three junction battery epitaxial structures on the p-type Ge substrate of final acquisition routine.In battery chip manufacturing process on N-shaped GaAs ohmic contact layer 101 evaporation AuGeNi/Au metal electrode 102, through 380 ℃, battery obtains good ohmic contact behind 3 minutes the rapid thermal annealing, its resistivity is 2.2 * 10
-5, the battery fill factor, curve factor is about 85%, and its side sectional view is as shown in Figure 1.
In aforementioned existing chemical combination half semiconductor solar cell epitaxial structure, its ohmic contact layer 101 is N-shaped GaAs, and in the chip processing procedure, need to adopt and use expensive metal A uGeNi/Au as the contacting metal electrode, the thickness of getting AuGeNi is 180nm, the 20nm of gold, and then solar cell is stated in evaporation one stokehold in process of production, AuGeNi, Au(20nm) metal consumption be respectively 5.1g, 1g, its cost is higher.
In aforesaid compound semiconductor solar cell epitaxial structure, the cost of metal electrode is high in the chip processing procedure, the below proposes a kind of new solar battery structure, it is under the prerequisite that guarantees battery performance, can use comparatively cheap metal as the metal electrode of battery chip, thereby reduce the battery production cost.
As shown in Figure 2, extension forms the full structure 100 of GaInP/GaAs/Ge three junction batteries on p-type Ge substrate, continue afterwards extension and form successively N-shaped GaAs the first ohmic contact layer 201, n+ type GaAs the second ohmic contact layer 202, p+ type GaAs the 3rd ohmic contact layer 203, with p-type GaAs the 4th ohmic contact layer 204, finally obtain the full structure of GaInP/GaAs/Ge three junction batteries on the p-type Ge substrate provided by the present invention.Wherein, n+ type GaAs the second ohmic contact layer 202 and p+ type GaAs the 3rd ohmic contact layer 203 common formation GaAs tunnel junctions have 150A/cm
2Peak value tunnelling current density.Particularly, the doping content of the first ohmic contact layer 201 is 2 * 10
18/ cm
3, the doping content of the second ohmic contact layer 202 is 8 * 10
18/ cm
3, the doping content of the 3rd ohmic contact layer 203 is 3 * 10
19/ cm
3, the doping content of the 4th ohmic contact layer 204 is 1.5 * 10
19/ cm
3By inserted tunnel junctions in ohmic contact layer, the top layer that makes its ohmic contact layer is P-type conduction.In battery chip manufacturing process, evaporation Ti/Au metal electrode 205 on p-type GaAs the 4th ohmic contact layer 204 through 360 ℃, obtains good ohmic contact behind 1 minute the rapid thermal annealing, and its resistivity is 1.2 * 10
-5, the battery fill factor, curve factor is about 85.3%.The thickness of getting Ti is that the thickness of 10nm, Au is 20nm, and then solar cell is stated in evaporation one stokehold in process of production, and the metal consumption of noble metal Au (20nm) electrode is 1g.
Find by contrast, the conventional full structure of GaInP/GaAs/Ge three junction batteries and the full structure of GaInP/GaAs/Ge three junction batteries provided by the present invention corresponding battery chip have similar series resistance and fill factor, curve factor, namely have similar battery performance.Required noble metal lacked a lot when yet required noble metal was than the conventional full structure fabrication metal electrode of GaInP/GaAs/Ge three junction batteries during GaInP/GaAs/Ge three junction battery structure fabrication metal electrode provided by the present invention, each stove consumes the AuGe of 5.1g less, and therefore compound semiconductor solar cell epitaxial structure provided by the present invention has preferably cost advantage.
Aforementioned solar cell, combining optical element can form the high concentration solar battery system.
Claims (9)
1. a compound semiconductor solar cell comprises a substrate, the battery active layer, and the ohmic contact lamination is characterized in that: described ohmic contact lamination inserts a tunnel junctions, thereby changes the conduction type of ohmic contact stack surface.
2. compound semiconductor solar cell according to claim 1, it is characterized in that: described ohmic contact lamination comprises the first ohmic contact layer, the second ohmic contact layer, the 3rd ohmic contact layer and the 4th ohmic contact layer, and wherein the second ohmic contact layer and the 3rd ohmic contact layer consist of tunnel junctions jointly.
3. compound semiconductor solar cell according to claim 2, it is characterized in that: described the first ohmic contact layer is consistent with the second ohmic contact layer conduction type, and the 3rd ohmic contact layer is consistent with the 4th ohmic contact layer conduction type.
4. compound semiconductor solar cell according to claim 3, it is characterized in that: the material of described the first ohmic contact layer and the second ohmic contact layer is N-shaped GaAs, and wherein the doping content of the first ohmic contact layer is less than the doping content of the second ohmic contact layer.
5. compound semiconductor solar cell according to claim 3, it is characterized in that: the material of described the 3rd ohmic contact layer and the 4th ohmic contact layer is P type GaAs, and wherein the doping content of the first ohmic contact layer is greater than the doping content of the second ohmic contact layer.
6. compound semiconductor solar cell according to claim 1, it is characterized in that: described ohmic contact stack surface is P-type conduction.
7. compound semiconductor solar cell according to claim 6, it is characterized in that: also comprise an electrode structure, it is positioned on the described ohmic contact stack surface, and its material is Ti/Au.
8. compound semiconductor solar cell according to claim 1 is characterized in that: described battery active layer comprises knot or many knots battery, and described ohmic contact lamination is positioned at the top of described top battery.
9. a solar power system is characterized in that: the described compound semiconductor solar cell of aforementioned arbitrary claim is installed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210384264.2A CN102881736B (en) | 2012-10-12 | 2012-10-12 | A kind of compound semiconductor solar cell |
| PCT/CN2013/083908 WO2014056395A1 (en) | 2012-10-12 | 2013-09-22 | Compound semiconductor solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210384264.2A CN102881736B (en) | 2012-10-12 | 2012-10-12 | A kind of compound semiconductor solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102881736A true CN102881736A (en) | 2013-01-16 |
| CN102881736B CN102881736B (en) | 2015-12-16 |
Family
ID=47483002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210384264.2A Active CN102881736B (en) | 2012-10-12 | 2012-10-12 | A kind of compound semiconductor solar cell |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102881736B (en) |
| WO (1) | WO2014056395A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014056395A1 (en) * | 2012-10-12 | 2014-04-17 | 厦门市三安光电科技有限公司 | Compound semiconductor solar battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941427A (en) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
| US20100006136A1 (en) * | 2008-07-08 | 2010-01-14 | University Of Delaware | Multijunction high efficiency photovoltaic device and methods of making the same |
| CN101950773A (en) * | 2010-08-09 | 2011-01-19 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell tunnel junction |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63100781A (en) * | 1986-10-17 | 1988-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element |
| US20120042952A1 (en) * | 2009-04-30 | 2012-02-23 | Industry-University Cooperation Foundation Hanyang University | Silicon solar cell comprising a carbon nanotube layer |
| CN201466053U (en) * | 2009-07-07 | 2010-05-12 | 扬州乾照光电有限公司 | Light emitting diode |
| CN102569476A (en) * | 2012-03-13 | 2012-07-11 | 天津三安光电有限公司 | Three-section solar battery and preparation method thereof |
| CN102881736B (en) * | 2012-10-12 | 2015-12-16 | 天津三安光电有限公司 | A kind of compound semiconductor solar cell |
-
2012
- 2012-10-12 CN CN201210384264.2A patent/CN102881736B/en active Active
-
2013
- 2013-09-22 WO PCT/CN2013/083908 patent/WO2014056395A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941427A (en) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
| US20100006136A1 (en) * | 2008-07-08 | 2010-01-14 | University Of Delaware | Multijunction high efficiency photovoltaic device and methods of making the same |
| CN101950773A (en) * | 2010-08-09 | 2011-01-19 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell tunnel junction |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014056395A1 (en) * | 2012-10-12 | 2014-04-17 | 厦门市三安光电科技有限公司 | Compound semiconductor solar battery |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014056395A1 (en) | 2014-04-17 |
| CN102881736B (en) | 2015-12-16 |
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