CN102881736B - A kind of compound semiconductor solar cell - Google Patents
A kind of compound semiconductor solar cell Download PDFInfo
- Publication number
- CN102881736B CN102881736B CN201210384264.2A CN201210384264A CN102881736B CN 102881736 B CN102881736 B CN 102881736B CN 201210384264 A CN201210384264 A CN 201210384264A CN 102881736 B CN102881736 B CN 102881736B
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- China
- Prior art keywords
- ohmic contact
- contact layer
- solar cell
- battery
- compound semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 150000001875 compounds Chemical class 0.000 title claims abstract description 18
- 238000003475 lamination Methods 0.000 claims abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 abstract description 19
- 229910052751 metal Inorganic materials 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 239000010931 gold Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 229910000510 noble metal Inorganic materials 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of compound semiconductor solar cell, it is characterized in that: in battery ohmic contact lamination, insert a tunnel junctions, thus change the conduction type on ohmic contact layer surface.For epitaxial structure disclosed in this invention, the tunnel junctions thinner thickness inserted in its ohmic contact layer, can not cause effective increase of battery extension cost; The change of battery ohmic contact layer surface conductance type on the other hand, by making it possible to select comparatively cheap metal to be used for making battery chip electrode, namely under the prerequisite ensureing battery performance, effectively reduces the production cost of solar cell.
Description
Technical field
The invention belongs to compound semiconductor area of solar cell, be specifically related to a kind of compound semiconductor solar cell.
Background technology
In the last few years, along with the further aggravation of energy crisis and ecological degeneration, developing novel renewable and clean energy resource has become that people produce, life, maintains the active demand of social sustainable development.Develop solar energy in recent years, photovoltaic power generation technology has attracted the common concern of people, wherein compound semiconductor solar cell reduces space with its higher conversion efficiency and larger cost of electricity-generating, is acknowledged as the Ground Application generation technology of most potentiality.But solar cell power generation technology has too high cost of electricity-generating, hamper the rapid business process of this technology always.
Under normal circumstances, at p-type Ge or GaAs Grown battery epitaxial loayer, battery surface ohmic contact layer will be N-shaped GaAs layer, therefore usually need to use the noble metals such as AuGe, Au, Pt as metal electrode in solar battery chip manufacturing process, to obtain good ohmic contact characteristic and lower series resistance, and then be conducive to the conversion efficiency improving battery.Such as, N-shaped GaAs and AuGeNi(is greater than 150nm)/Au(is about 20nm) good ohmic contact can be formed after short annealing.
Summary of the invention
The object of the present invention is to provide a kind of compound semiconductor solar cell, under the prerequisite ensureing battery performance, comparatively cheap metal can be used as the metal electrode of battery chip, thus reduce battery production cost.
According to a first aspect of the invention, a kind of compound semiconductor solar cell, comprises a substrate, battery-active layer, ohmic contact lamination, is characterized in that: insert a tunnel junctions in described ohmic contact lamination, thus changes the conduction type of ohmic contact stack surface.
Further, described ohmic contact lamination is made up of the first ohmic contact layer, the second ohmic contact layer, the 3rd ohmic contact layer and the 4th ohmic contact layer, wherein the second ohmic contact layer and the 3rd ohmic contact layer form tunnel junctions jointly, first ohmic contact layer is consistent with the second ohmic contact layer conduction type, and the 3rd ohmic contact layer is consistent with the 4th ohmic contact layer conduction type.
In the present invention, in the battery of common p-type Ge or GaAs Grown, by inserting a tunnel junctions in ohmic contact layer, thus change the conduction type on ohmic contact layer surface, namely ohmic contact layer surface is in p-type electric-conducting, the metal of P type semiconductor electric conducting material and lower cost can obtain preferably ohmic contact through short annealing process, as p-type GaAs and Ti(<20nm)/Au(is about 20nm) good ohmic contact and lower contact resistance can be obtained after short annealing, thus solve in conventional solar cell chip fabrication processes need use AuGe, Au, the noble metals such as Pt are as metal electrode, reduce battery electrode cost.
According to a second aspect of the invention, the present invention also provides a kind of solar energy luminous system, and it is provided with aforesaid compound semiconductor solar cell.
Other features and advantages of the present invention will be set forth in the following description, and, partly become apparent from specification, or understand by implementing the present invention.Object of the present invention and other advantages realize by structure specifically noted in specification, claims and accompanying drawing and obtain.
Accompanying drawing explanation
Fig. 1 is the full structure of GaInP/GaAs/Ge tri-junction battery in conventional p-type Ge substrate.
Fig. 2 is the full structure of GaInP/GaAs/Ge tri-junction battery in p-type Ge substrate provided by the present invention.
In figure, each label represents:
The full structure of GaInP/GaAs/Ge tri-junction battery on 100:p type Ge substrate
101:n type GaAs ohmic contact layer
102:AuGeNi/Au metal electrode
201:n type GaAs first ohmic contact layer
202:n+ type GaAs second ohmic contact layer
203:p+ type GaAs the 3rd ohmic contact layer
204:p type GaAs the 4th ohmic contact layer
205:Ti/Au metal electrode.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
In existing chemical combination half semiconductor solar cell, usually using p-type material as growth substrates, as p-type Ge substrate, p-type GaAs substrate or p-type InP substrate.For GaInP/GaAs/Ge three-joint solar cell, form the full structure 100 of GaInP/GaAs/Ge tri-junction battery as it is generally extension in p-type Ge substrate, continue extension afterwards and form N-shaped GaAs ohmic contact layer 101, its doping content is 5 × 10
18/ cm
3, GaInP/GaAs/Ge tri-junction battery epitaxial structure in the final p-type Ge substrate obtaining routine.In battery chip manufacturing process on N-shaped GaAs ohmic contact layer 101 evaporation AuGeNi/Au metal electrode 102, through 380 DEG C, after the rapid thermal annealing of 3 minutes, battery obtains good ohmic contact, and its resistivity is 2.2 × 10
-5, battery fill factor, curve factor is about 85%, and its side sectional view as shown in Figure 1.
In aforementioned existing chemical combination half semiconductor solar cell epitaxial structure, its ohmic contact layer 101 is N-shaped GaAs, and in chip processing procedure, need adopt and use expensive metal A uGeNi/Au as contacting metal electrode, the thickness getting AuGeNi is 180nm, the 20nm of gold, then solar cell is stated in evaporation one stokehold in process of production, AuGeNi, Au(20nm) metal consumption be respectively 5.1g, 1g, its cost is higher.
For in aforesaid compound semiconductor solar cell epitaxial structure, in chip processing procedure, the cost of metal electrode is high, a kind of new solar battery structure is proposed below, it is under the prerequisite ensureing battery performance, comparatively cheap metal can be used as the metal electrode of battery chip, thus reduce battery production cost.
As shown in Figure 2, in p-type Ge substrate, extension forms the full structure 100 of GaInP/GaAs/Ge tri-junction battery, continue extension afterwards and form N-shaped GaAs first ohmic contact layer 201 successively, n+ type GaAs second ohmic contact layer 202, p+ type GaAs the 3rd ohmic contact layer 203, with p-type GaAs the 4th ohmic contact layer 204, the full structure of GaInP/GaAs/Ge tri-junction battery in final acquisition p-type Ge substrate provided by the present invention.Wherein, n+ type GaAs second ohmic contact layer 202 and p+ type GaAs the 3rd ohmic contact layer 203 form GaAs tunnel junctions jointly, have 150A/cm
2peak value tunneling current density.Particularly, the doping content of the first ohmic contact layer 201 is 2 × 10
18/ cm
3, the doping content of the second ohmic contact layer 202 is 8 × 10
18/ cm
3, the doping content of the 3rd ohmic contact layer 203 is 3 × 10
19/ cm
3, the doping content of the 4th ohmic contact layer 204 is 1.5 × 10
19/ cm
3.By inserting tunnel junctions in ohmic contact layer, the top layer of its ohmic contact layer is made to be P-type conduction.In battery chip manufacturing process, evaporation Ti/Au metal electrode 205 on p-type GaAs the 4th ohmic contact layer 204, through 360 DEG C, obtains good ohmic contact after the rapid thermal annealing of 1 minute, and its resistivity is 1.2 × 10
-5, battery fill factor, curve factor is about 85.3%.The thickness getting Ti is the thickness of 10nm, Au is 20nm, then solar cell is stated in evaporation one stokehold in process of production, and the metal consumption of noble metal Au (20nm) electrode is 1g.
Found by contrast, corresponding to the conventional full structure of GaInP/GaAs/Ge tri-junction battery and the full structure of GaInP/GaAs/Ge tri-junction battery provided by the present invention, battery chip has similar series resistance and fill factor, curve factor, namely has similar battery performance.But required noble metal is few more a lot of than required noble metal during conventional GaInP/GaAs/Ge tri-junction battery full structure fabrication metal electrode during GaInP/GaAs/Ge tri-junction battery structure fabrication metal electrode provided by the present invention, each stove consumes the AuGe of 5.1g less, and therefore compound semiconductor solar cell epitaxial structure provided by the present invention has good cost advantage.
Aforementioned solar cell, combining optical element can form high concentration solar battery system.
Claims (7)
1. a compound semiconductor solar cell, comprise a substrate, battery-active layer, ohmic contact lamination and electrode structure, described battery-active layer comprises a knot or many knots battery, described ohmic contact lamination is positioned at the top of described battery-active layer, described electrode structure is positioned in described ohmic contact stack surface, it is characterized in that: described ohmic contact lamination inserts a tunnel junctions, thus change the conduction type of ohmic contact stack surface, make described ohmic contact stack surface be P-type conduction.
2. compound semiconductor solar cell according to claim 1, it is characterized in that: described ohmic contact lamination comprises the first ohmic contact layer, the second ohmic contact layer, the 3rd ohmic contact layer and the 4th ohmic contact layer, wherein the second ohmic contact layer and the 3rd ohmic contact layer form tunnel junctions jointly.
3. compound semiconductor solar cell according to claim 2, is characterized in that: described first ohmic contact layer is consistent with the second ohmic contact layer conduction type, and the 3rd ohmic contact layer is consistent with the 4th ohmic contact layer conduction type.
4. compound semiconductor solar cell according to claim 3, it is characterized in that: the material of described first ohmic contact layer and the second ohmic contact layer is N-shaped GaAs, and wherein the doping content of the first ohmic contact layer is less than the doping content of the second ohmic contact layer.
5. compound semiconductor solar cell according to claim 3, it is characterized in that: the material of described 3rd ohmic contact layer and the 4th ohmic contact layer is P type GaAs, and wherein the doping content of the 3rd ohmic contact layer is greater than the doping content of the 4th ohmic contact layer.
6. compound semiconductor solar cell according to claim 1, is characterized in that: the material of described electrode structure is Ti/Au.
7. a solar power system, is characterized in that: be provided with the compound semiconductor solar cell described in aforementioned arbitrary claim.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210384264.2A CN102881736B (en) | 2012-10-12 | 2012-10-12 | A kind of compound semiconductor solar cell |
| PCT/CN2013/083908 WO2014056395A1 (en) | 2012-10-12 | 2013-09-22 | Compound semiconductor solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210384264.2A CN102881736B (en) | 2012-10-12 | 2012-10-12 | A kind of compound semiconductor solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102881736A CN102881736A (en) | 2013-01-16 |
| CN102881736B true CN102881736B (en) | 2015-12-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210384264.2A Active CN102881736B (en) | 2012-10-12 | 2012-10-12 | A kind of compound semiconductor solar cell |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102881736B (en) |
| WO (1) | WO2014056395A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102881736B (en) * | 2012-10-12 | 2015-12-16 | 天津三安光电有限公司 | A kind of compound semiconductor solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941427A (en) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
| CN101950773A (en) * | 2010-08-09 | 2011-01-19 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell tunnel junction |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63100781A (en) * | 1986-10-17 | 1988-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor element |
| US20100006136A1 (en) * | 2008-07-08 | 2010-01-14 | University Of Delaware | Multijunction high efficiency photovoltaic device and methods of making the same |
| JP5326041B2 (en) * | 2009-04-30 | 2013-10-30 | 漢陽大学校産学協力団 | Silicon solar cells containing carbon nanotube layers |
| CN201466053U (en) * | 2009-07-07 | 2010-05-12 | 扬州乾照光电有限公司 | Light emitting diode |
| CN102569476A (en) * | 2012-03-13 | 2012-07-11 | 天津三安光电有限公司 | Three-section solar battery and preparation method thereof |
| CN102881736B (en) * | 2012-10-12 | 2015-12-16 | 天津三安光电有限公司 | A kind of compound semiconductor solar cell |
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2012
- 2012-10-12 CN CN201210384264.2A patent/CN102881736B/en active Active
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2013
- 2013-09-22 WO PCT/CN2013/083908 patent/WO2014056395A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1941427A (en) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
| CN101950773A (en) * | 2010-08-09 | 2011-01-19 | 上海联孚新能源科技有限公司 | Preparation method of multi-junction solar cell tunnel junction |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014056395A1 (en) | 2014-04-17 |
| CN102881736A (en) | 2013-01-16 |
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