CN110061072A - A kind of TBC solar battery structure and preparation method thereof - Google Patents
A kind of TBC solar battery structure and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- 239000011159 matrix material Substances 0.000 claims abstract description 59
- 238000002161 passivation Methods 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 72
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 72
- 229910004205 SiNX Inorganic materials 0.000 claims description 56
- 229910017107 AlOx Inorganic materials 0.000 claims description 42
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 28
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 238000010276 construction Methods 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 229910003465 moissanite Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 239000002184 metal Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000000694 effects Effects 0.000 abstract description 2
- 239000002905 metal composite material Substances 0.000 abstract description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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Abstract
It is an object of the invention to disclose a kind of TBC solar battery structure and preparation method thereof, compared with prior art, TOPCon structure, the TOPCon structure of n-type doping adulterated with p-type substitute the p-type doped polycrystal silicon layer and N-type doped polycrystal silicon layer of IBC battery respectively, improve the passivation effect to N-type matrix back surface, and the metal composite and contact resistance of the positive and negative secondary gate line electrode Metal contact regions in the back side are reduced, effectively improve cell photoelectric transfer efficiency；It is done and is isolated using intrinsic TOPCon structure between the TOPCon structure and the TOPCon structure of n-type doping of p-type doping, the reversed saturation dark current between the TOPCon structure of p-type doping and the TOPCon structure of n-type doping is effectively reduced, improve battery open circuit voltage, effectively control production cost, production efficiency is improved, is achieved the object of the present invention.
Description
Technical field
The present invention relates to a kind of solar battery structure, in particular to a kind of TBC sun based on TOPCon passivating structure
Energy battery structure and preparation method thereof.
Background technique
Photovoltaic power generation is current one of the major way for utilizing solar energy, and solar energy power generating is cleaned, safely, just because of it
The features such as sharp, efficient, it has also become countries in the world common concern and the new industry given priority to.Therefore, it furthers investigate and utilizes
Solar energy resources, to alleviating, crisis of resource, improving the ecological environment is had a very important significance.
For IBC battery because front zero is blocked, battery positive and negative electrode is respectively positioned on the special construction of cell backside, battery appearance is big
Fang Meiguan, cell conversion efficiency are high, are industry research hot spot and future thrust.But IBC battery is by positive and negative anodes grid line slurry
Limitation, electrode metal contact area contact resistance is big, metal contact compound height limit conventional IBC solar battery efficiency into
One step raises.
It is accordingly required in particular to a kind of TBC solar battery structure and preparation method thereof, to solve above-mentioned existing ask
Topic.
Summary of the invention
The purpose of the present invention is to provide a kind of TBC solar battery structures and preparation method thereof, for the prior art
Deficiency reduces the compound of electrode metal contact portion, and further decreases metal contact resistance, improves solar cell photoelectric and turns
Change efficiency, reduces production cost.
Technical problem solved by the invention can be realized using following technical scheme:
In a first aspect, the present invention provides a kind of TBC solar battery structure, which is characterized in that it includes silicon wafer matrix, institute
The front surface for stating silicon wafer matrix sets gradually front-surface field and front surface passivated reflection reducing penetrates layer, and the back side of the silicon wafer matrix is successively
It is provided with tunnel oxide and backside passivation layer, N+ doping is provided between the tunnel oxide and the backside passivation layer
The polysilicon/amorphous silicon of polysilicon/amorphous silicon, intrinsic polysilicon/amorphous silicon and P+ doping, the back side point of the backside passivation layer
It is not provided with positive electrode pair grid line and negative electrode pair grid line.
In one embodiment of the invention, the front surface of the silicon wafer matrix is flannelette, the back side of the silicon wafer matrix
For burnishing surface or flannelette.
In one embodiment of the invention, the silicon wafer matrix is N-type silicon chip matrix, and the front-surface field is that N+ gently mixes
The TOPCon structure that diamicton or N+ are lightly doped, it is SiOx, SiNx or SiOx/SiNx, SiOx/ that the front surface passivated reflection reducing, which penetrates layer,
SiONx, SiOx/SiNx/SiONx laminated construction.
In one embodiment of the invention, the silicon wafer matrix is P-type silicon sheet matrix, and the front-surface field is that P+ gently mixes
The TOPCon structure that diamicton or P+ are lightly doped, the front surface passivated reflection reducing penetrate layer be AlOx, SiOx, SiNx or SiOx/SiNx,
SiOx/AlOx/SiNx, SiOx/AlOx/SiOx, AlOx/SiOx, AlOx/SiNx, AlOx/SiNx/SiONx laminated construction.
In one embodiment of the invention, the tunnel oxide with a thickness of 0-5nm.
Further, the tunnel oxide with a thickness of 1-2nm.
In one embodiment of the invention, the polysilicon layer or amorphous silicon layer of the TOPCon structure with a thickness of 5-
5000nm。
In one embodiment of the invention, the polysilicon layer or amorphous silicon layer at the silicon wafer matrix back side with a thickness of
100-200nm。
In one embodiment of the invention, the polysilicon/amorphous silicon of the N+ doping at the silicon wafer matrix back side is mixed with P+
Intrinsic polysilicon/amorphous silicon width between miscellaneous polysilicon/amorphous silicon is 1-500 μm.
In one embodiment of the invention, the polysilicon layer of the silicon wafer front side of matrix or amorphous silicon layer with a thickness of 1-
100nm。
Second aspect, the present invention also provides a kind of preparation methods of TBC solar battery structure, include the following steps:
A) silicon wafer matrix is put into NaOH that mass percent is 1%-20% or KOH solution carries out damaging layer and carries out
Twin polishing；
B) intrinsic TOPCon structure is formed at the silicon wafer matrix back side；
C) one layer of SiC, SiOx, SiNx or thermally grown, one layer of SiOx is deposited in the intrinsic TOPCon structure in the silicon wafer matrix back side
As exposure mask, exposure mask with a thickness of 5-500nm；
D) NaOH or the positive making herbs into wool of KOH solution progress that mass percent is 1%-5% are put into；
E) it slots to form the area N+ window in the method for silicon wafer matrix back side laser slotting, printing corrosive slurry or photoetching；
F) two-sided N+ doping is carried out in the thermal diffusion of the silicon wafer matrix back side or ion implanting and method for annealing；
G) PSG layer and mask layer that cleaning removal doping is formed；
H) one layer of p-type doped source is overleaf deposited using printing, spraying or CVD method；
I) area P+ is doped with laser；
J) cleaning removal back side p-type doped source；
K) SiOx, SiNx or SiOx/SiNx, SiOx/SiONx, SiOx/ are grown by CVD mode in silicon wafer front side of matrix
SiNx/SiONx laminated construction penetrates layer as passivated reflection reducing, and passivated reflection reducing penetrates the thickness of layer in 50-300nm；It is carried on the back in silicon wafer matrix
Face by CVD mode grow AlOx, SiOx, SiNx or SiOx/SiNx, SiOx/AlOx/SiNx, SiOx/AlOx/SiOx,
AlOx/SiOx, AlOx/SiNx, AlOx/SiONx/SiNx laminated construction are as passivation layer, and the thickness of passivation layer is in 50-500nm；
L) two kinds of different slurries are printed respectively in the silicon wafer matrix back side area P+ and the area N+ one-step print slurry of the same race or in two times
Material forms secondary grid line, is then sintered.
In one embodiment of the invention, the width of the area N+ window is 0.1-3mm.
In one embodiment of the invention, the N+ doped layer sheet resistance is 60-2000 Ω/sq.
In one embodiment of the invention, P+ doping sheet resistance is 50-500 Ω/sq, doping width in 0.1-3mm,
P+ doped region distance N+ doped region away from being 1-500 μm.
In one embodiment of the invention, the width of the secondary grid line is at 10-300 μm, and the radical of secondary grid line is in 10-
1000.
TBC solar battery structure of the invention and preparation method thereof is adulterated with p-type compared with prior art
TOPCon structure, the TOPCon structure of n-type doping substitute the p-type doped polycrystal silicon layer and N-type doped polycrystal silicon layer of IBC battery respectively,
The passivation effect to N-type matrix back surface is improved, and reduces the metal composite of the positive and negative secondary gate line electrode Metal contact regions in the back side
And contact resistance, effectively improve cell photoelectric transfer efficiency；The TOPCon structure of p-type doping and the TOPCon structure of n-type doping
Between do and be isolated using intrinsic TOPCon structure, the TOPCon structure of p-type doping and the TOPCon structure of n-type doping is effectively reduced
Between reversed saturation dark current, improve battery open circuit voltage, effectively control production cost, improve production efficiency, realize this hair
Bright purpose.
The features of the present invention sees the detailed description of the drawings of the present case and following preferable embodiment and obtains clearly
Solution.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of TBC solar battery structure of the invention.
Specific embodiment
In order to be easy to understand the technical means, the creative features, the aims and the efficiencies achieved by the present invention, tie below
Conjunction is specifically illustrating, and the present invention is further explained.
Embodiment
As shown in Figure 1, TBC solar battery structure of the invention, it includes silicon wafer matrix 100, before silicon wafer matrix 100
Surface sets gradually front-surface field 101 and front surface passivated reflection reducing penetrates layer 102, and the back side of silicon wafer matrix 100 is disposed with tunnel
Oxide layer 201 and backside passivation layer 205 are worn, the polycrystalline of N+ doping is provided between tunnel oxide 201 and backside passivation layer 205
The polysilicon/amorphous silicon 204 of silicon/amorphous silicon 202, intrinsic polysilicon/amorphous silicon 203 and P+ doping, the back of backside passivation layer 205
Face is respectively arranged with positive electrode pair grid line 206 and negative electrode pair grid line 207.
In the present embodiment, the front surface of silicon wafer matrix 100 is flannelette, and the back side of silicon wafer matrix 100 is burnishing surface or suede
Face.
In the present embodiment, silicon wafer matrix 100 can may be p-type for N-type, and silicon wafer matrix 100 is N-type silicon chip base
Body, front-surface field 101 are the TOPCon structure that is lightly doped of N+ lightly-doped layer or N+, front surface passivated reflection reducing penetrate layer 102 be SiOx,
SiNx or SiOx/SiNx, SiOx/SiONx, SiOx/SiNx/SiONx laminated construction.
Silicon wafer matrix 100 is P-type silicon sheet matrix, and front-surface field 101 is the TOPCon knot that P+ lightly-doped layer or P+ are lightly doped
Structure, it is AlOx, SiOx, SiNx or SiOx/SiNx, SiOx/AlOx/SiNx, SiOx/AlOx/ that front surface passivated reflection reducing, which penetrates layer 102,
SiOx, AlOx/SiOx, AlOx/SiNx, AlOx/SiNx/SiONx laminated construction.
Backside passivation layer 205 is AlOx, SiOx, SiNx or SiOx/SiNx, SiOx/AlOx/SiNx, SiOx/AlOx/
SiOx, AlOx/SiOx, AlOx/SiNx, AlOx/SiONx/SiNx laminated construction；It is blunt that positive electrode pair grid line 206 can penetrate the back side
The polysilicon/amorphous silicon 204 for changing layer 205 and P+ doping forms Ohmic contact；Negative electrode pair grid line 207 can penetrate backside passivation layer
205 form Ohmic contact with the polysilicon/amorphous silicon 202 that N+ is adulterated.
In the present embodiment, tunnel oxide 201 with a thickness of 0-5nm.Preferably, tunnel oxide 201 with a thickness of
1-2nm。
In the present embodiment, the polysilicon layer or amorphous silicon layer of the TOPCon structure with a thickness of 5-5000nm.
In the present embodiment, the polysilicon layer or amorphous silicon layer at 100 back side of silicon wafer matrix with a thickness of 100-200nm.Silicon
The intrinsic polysilicon between polysilicon/amorphous silicon that the polysilicon/amorphous silicon and P+ of the N+ doping at 100 back side of sheet matrix are adulterated/
The width of amorphous silicon is 1-500 μm.
In the present embodiment, the positive polysilicon layer of silicon wafer matrix 100 or amorphous silicon layer with a thickness of 1-100nm.
The preparation method of TBC solar battery structure of the invention, includes the following steps:
A) silicon wafer matrix is put into NaOH that mass percent is 1%-20% or KOH solution carries out damaging layer and carries out
Twin polishing；
B) intrinsic TOPCon structure is formed at the silicon wafer matrix back side；
C) one layer of SiC, SiOx, SiNx or thermally grown, one layer of SiOx is deposited in the intrinsic TOPCon structure in the silicon wafer matrix back side
As exposure mask, exposure mask with a thickness of 5-500nm；
D) NaOH or the positive making herbs into wool of KOH solution progress that mass percent is 1%-5% are put into；
E) it slots to form the area N+ window, N in the method for silicon wafer matrix back side laser slotting, printing corrosive slurry or photoetching
The width of+area window is 0.1-3mm；
F) two-sided N+ doping, N+ doped layer are carried out in the thermal diffusion of the silicon wafer matrix back side or ion implanting and method for annealing
Sheet resistance is 60-2000 Ω/sq；
G) PSG layer and mask layer that cleaning removal doping is formed；
H) one layer of p-type doped source is overleaf deposited using printing, spraying or CVD method；
I) area P+ is doped with laser, it is 50-500 Ω/sq that P+, which adulterates sheet resistance, and doping width is mixed in 0.1-3mm, P+
Miscellaneous offset is from N+ doped region away from being 1-500 μm；
J) cleaning removal back side p-type doped source；
K) SiOx, SiNx or SiOx/SiNx, SiOx/SiONx, SiOx/ are grown by CVD mode in silicon wafer front side of matrix
SiNx/SiONx laminated construction penetrates layer as passivated reflection reducing, and passivated reflection reducing penetrates the thickness of layer in 50-300nm；It is carried on the back in silicon wafer matrix
Face by CVD mode grow AlOx, SiOx, SiNx or SiOx/SiNx, SiOx/AlOx/SiNx, SiOx/AlOx/SiOx,
AlOx/SiOx, AlOx/SiNx, AlOx/SiONx/SiNx laminated construction are as passivation layer, and the thickness of passivation layer is in 50-500nm；
L) two kinds of different slurries are printed respectively in the silicon wafer matrix back side area P+ and the area N+ one-step print slurry of the same race or in two times
Material forms secondary grid line, and at 10-300 μm, then the radical of secondary grid line is sintered the width of secondary grid line in 10-1000 root.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention, the claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (15)
1. a kind of TBC solar battery structure and preparation method thereof, which is characterized in that it includes silicon wafer matrix, the silicon wafer base
The front surface of body sets gradually front-surface field and front surface passivated reflection reducing penetrates layer, and the back side of the silicon wafer matrix is disposed with tunnel
Wear oxide layer and backside passivation layer, be provided between the tunnel oxide and the backside passivation layer N+ doping polysilicon/
The polysilicon/amorphous silicon of amorphous silicon, intrinsic polysilicon/amorphous silicon and P+ doping, the back side of the backside passivation layer is respectively set
There are positive electrode pair grid line and negative electrode pair grid line.
2. TBC solar battery structure as described in claim 1, which is characterized in that the front surface of the silicon wafer matrix is suede
Face, the back side of the silicon wafer matrix are burnishing surface or flannelette.
3. TBC solar battery structure as described in claim 1, which is characterized in that the silicon wafer matrix is N-type silicon chip base
Body, the front-surface field are the TOPCon structure that N+ lightly-doped layer or N+ are lightly doped, and the front surface passivated reflection reducing penetrates layer and is
SiOx, SiNx or SiOx/SiNx, SiOx/SiONx, SiOx/SiNx/SiONx laminated construction.
4. TBC solar battery structure as described in claim 1, which is characterized in that the silicon wafer matrix is P-type silicon chip base
Body, the front-surface field are the TOPCon structure that P+ lightly-doped layer or P+ are lightly doped, and the front surface passivated reflection reducing penetrates layer and is
AlOx, SiOx, SiNx or SiOx/SiNx, SiOx/AlOx/SiNx, SiOx/AlOx/SiOx, AlOx/SiOx, AlOx/SiNx,
AlOx/SiNx/SiONx laminated construction.
5. TBC solar battery structure as described in claim 1, which is characterized in that the tunnel oxide with a thickness of 0-
5nm。
6. TBC solar battery structure as claimed in claim 5, which is characterized in that the tunnel oxide with a thickness of 1-
2nm。
7. TBC solar battery structure as described in claim 1, which is characterized in that the polysilicon layer of the TOPCon structure
Or amorphous silicon layer with a thickness of 5-5000nm.
8. TBC solar battery structure as described in claim 1, which is characterized in that the polysilicon at the silicon wafer matrix back side
Layer or amorphous silicon layer with a thickness of 100-200nm.
9. TBC solar battery structure as described in claim 1, which is characterized in that the N+ at the silicon wafer matrix back side is adulterated
Polysilicon/amorphous silicon and P+ doping polysilicon/amorphous silicon between intrinsic polysilicon/amorphous silicon width be 1-500 μm.
10. TBC solar battery structure as described in claim 1, which is characterized in that the polysilicon of the silicon wafer front side of matrix
Layer or amorphous silicon layer with a thickness of 1-100nm.
11. a kind of preparation method of TBC solar battery structure, includes the following steps:
A) silicon wafer matrix is put into NaOH that mass percent is 1%-20% or KOH solution carries out damaging layer and carries out two-sided
Polishing；
B) intrinsic TOPCon structure is formed at the silicon wafer matrix back side；
C) one layer of SiC, SiOx, SiNx or thermally grown, one layer of SiOx conduct is deposited in the intrinsic TOPCon structure in the silicon wafer matrix back side
Exposure mask, exposure mask with a thickness of 5-500nm；
D) NaOH or the positive making herbs into wool of KOH solution progress that mass percent is 1%-5% are put into；
E) it slots to form the area N+ window in the method for silicon wafer matrix back side laser slotting, printing corrosive slurry or photoetching；
F) two-sided N+ doping is carried out in the thermal diffusion of the silicon wafer matrix back side or ion implanting and method for annealing；
G) PSG layer and mask layer that cleaning removal doping is formed；
H) one layer of p-type doped source is overleaf deposited using printing, spraying or CVD method；
I) area P+ is doped with laser；
J) cleaning removal back side p-type doped source；
K) SiOx, SiNx or SiOx/SiNx, SiOx/SiONx, SiOx/SiNx/ are grown by CVD mode in silicon wafer front side of matrix
SiONx laminated construction penetrates layer as passivated reflection reducing, and passivated reflection reducing penetrates the thickness of layer in 50-300nm；Pass through at the silicon wafer matrix back side
CVD mode grow AlOx, SiOx, SiNx or SiOx/SiNx, SiOx/AlOx/SiNx, SiOx/AlOx/SiOx, AlOx/SiOx,
AlOx/SiNx, AlOx/SiONx/SiNx laminated construction are as passivation layer, and the thickness of passivation layer is in 50-500nm；
L) two kinds of different slurry shapes are printed respectively in the silicon wafer matrix back side area P+ and the area N+ one-step print slurry of the same race or in two times
At secondary grid line, then it is sintered.
12. the preparation method of TBC solar battery structure as claimed in claim 11, which is characterized in that the area N+ window
Width be 0.1-3mm.
13. the preparation method of TBC solar battery structure as claimed in claim 11, which is characterized in that the N+ doped layer
Sheet resistance is 60-2000 Ω/sq.
14. the preparation method of TBC solar battery structure as claimed in claim 11, which is characterized in that the doping side P+
Resistance is 50-500 Ω/sq, doping width in 0.1-3mm, P+ doped region distance N+ doped region away from being 1-500 μm.
15. the preparation method of TBC solar battery structure as claimed in claim 11, which is characterized in that the pair grid line
Width is at 10-300 μm, and the radical of secondary grid line is in 10-1000 root.
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| CN201910276202.1A CN110061072A (en) | 2019-04-08 | 2019-04-08 | A kind of TBC solar battery structure and preparation method thereof |
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Cited By (5)
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| CN110473926A (en) * | 2019-08-22 | 2019-11-19 | 浙江正泰太阳能科技有限公司 | A kind of passivation contact solar cell and preparation method thereof |
| CN112466960A (en) * | 2020-11-10 | 2021-03-09 | 浙江晶科能源有限公司 | Solar cell structure and preparation method thereof |
| CN114725236A (en) * | 2021-01-05 | 2022-07-08 | 黄河水电西宁太阳能电力有限公司 | Structure and preparation method of passivated contact IBC solar cell |
| EP4148809A1 (en) * | 2021-09-10 | 2023-03-15 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, method for preparing same and solar cell module |
| EP4220737A1 (en) * | 2021-08-20 | 2023-08-02 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell and photovoltaic module |
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| CN110473926A (en) * | 2019-08-22 | 2019-11-19 | 浙江正泰太阳能科技有限公司 | A kind of passivation contact solar cell and preparation method thereof |
| CN112466960A (en) * | 2020-11-10 | 2021-03-09 | 浙江晶科能源有限公司 | Solar cell structure and preparation method thereof |
| CN114725236A (en) * | 2021-01-05 | 2022-07-08 | 黄河水电西宁太阳能电力有限公司 | Structure and preparation method of passivated contact IBC solar cell |
| EP4220737A1 (en) * | 2021-08-20 | 2023-08-02 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell and photovoltaic module |
| EP4148809A1 (en) * | 2021-09-10 | 2023-03-15 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, method for preparing same and solar cell module |
| EP4254518A3 (en) * | 2021-09-10 | 2023-10-18 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Solar cell, method for preparing same and solar cell module |
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