CN102879607A - Micro-electro-mechanical accelerometer and manufacturing method thereof - Google Patents
Micro-electro-mechanical accelerometer and manufacturing method thereof Download PDFInfo
- Publication number
- CN102879607A CN102879607A CN2012103532453A CN201210353245A CN102879607A CN 102879607 A CN102879607 A CN 102879607A CN 2012103532453 A CN2012103532453 A CN 2012103532453A CN 201210353245 A CN201210353245 A CN 201210353245A CN 102879607 A CN102879607 A CN 102879607A
- Authority
- CN
- China
- Prior art keywords
- several
- micro electronmechanical
- mass body
- silicon layer
- electronmechanical accelerometer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Pressure Sensors (AREA)
- Micromachines (AREA)
Abstract
The invention relates to a micro-electro-mechanical accelerometer and a manufacturing method thereof. The method comprises the steps as follows: carrying out primary etching on a silicon-on-insulator wafer comprising a first silicon layer, an oxide layer and a second silicon layer sequentially stacked to form a plurality of first notches extending to the oxide layer in the first silicon layer, so as to utilize the first silicon layer to form two support legs of a mass body of the micro-electro-mechanical accelerometer; carrying out secondary etching on the silicon-on-insulator wafer to form a plurality of second notches extending to the oxide layer in the second silicon layer, so as to utilize the second silicon layer to form an electrode in the mass body of the micro-electro-mechanical accelerometer; and carrying out etching on the oxide layer to enable the first silicon layer between the two support legs to fall away. As the micro-electro-mechanical accelerometer can form the mass body with large size without being cut, high productivity and high sensitivity are realized according to the embodiment of the invention.
Description
Technical field
The present invention relates to micro electronmechanical acceleration sensing technical field, relate in particular to a kind of micro electronmechanical accelerometer and manufacture method thereof based on the electric capacity conduction technique.
Background technology
In traditional micro electronmechanical accelerometer manufacturing process, generally come separating chips by cutting.In the process of utilizing cutting machine to cut, not only need water to cool off, also can produce chip.Therefore, do not damaged by chip in order to protect the fine structure of being made by silicon, need to make this fine structure be coated with protective seam such as photoresist etc.Yet, after cutting, remove photoresist and bother very much, reduce thereby usually have the destroyed output that causes of a certain proportion of chip.
On the other hand, by the cutting and separating chip, so that the size of the mass body in the micro electronmechanical accelerometer is restricted.Yet the sensitivity of micro electronmechanical accelerometer and the size of mass body are closely related, and for example the weight of Blang's noise and mass body is inversely proportional to.Therefore, the negative effect that the sensitivity of micro electronmechanical accelerometer is caused in order to remedy little mass body, usually need to improve the technical requirement to aspects such as encapsulation, electrical interface and control system in the prior art, for example: a, Vacuum Package and under vacuum condition the micro electronmechanical accelerometer chip of operation, with reduce Blang noise; And b, interface circuit realize with ASIC, with as far as possible reduce disturbance and other electronic noise.
In sum, be necessary to research and develop a kind of exempt to cut, micro electronmechanical accelerometer manufacturing process that can form large mass body.
Summary of the invention
In view of this, the purpose of this invention is to provide a kind of micro electronmechanical accelerometer and manufacture method thereof, it can be exempted from dissected topography and become large mass body, thereby the sensitivity of the micro electronmechanical accelerometer of Effective Raise, and the aspects such as encapsulation, electrical interface and control system that need not micro electronmechanical accelerometer apply too much technical requirement.
To achieve these goals, according to embodiments of the invention, provide a kind of manufacture method of micro electronmechanical accelerometer, it comprises:
The Silicon-On-Insulator wafer that comprises the first silicon layer, oxide skin(coating) and the second silicon layer is carried out the first etching, in described the first silicon layer, to form several first indentations that extend to described oxide skin(coating), thereby utilize described the first silicon layer to form two legs of the mass body of described micro electronmechanical accelerometer, wherein said the first silicon layer, described oxide skin(coating) and described the second silicon layer stack gradually along stacked direction;
Described Silicon-On-Insulator wafer is carried out the second etching, extend to several second indentations of described oxide skin(coating) in described the second silicon layer, to form, thereby utilize described the second silicon layer to form electrode in the mass body of described micro electronmechanical accelerometer; And
Described oxide skin(coating) is carried out etching, so that the first silicon layer between described two legs breaks away from.
To achieve these goals, according to another embodiment of the present invention, provide a kind of micro electronmechanical accelerometer, having comprised:
Mass body, it has respectively the first groove and the second groove along the two ends on the sensitive axis direction, be provided with several the first traveling electrodes in described the first groove, is provided with several the second traveling electrodes in described the second groove;
The first support, it is connected with several and stretches into the first fixed electorde into described the first groove, and each described first fixed electorde and each described the first traveling electrode form several the first electric capacity;
The second support, it is connected with several and stretches into the second fixed electorde into described the second groove, and each described second fixed electorde and each described the second traveling electrode form several the second electric capacity; And
Fixed mount, described mass body is connected to described fixed mount movably along described sensitive axis direction, and described the first support and the second support are fixed on the described fixed mount.
Owing to isolate one single chip by etching technics, avoided cutting technique to the damage that mass body brings according to micro electronmechanical accelerometer and manufacture method thereof that the embodiment of the invention provides, improved output.In the practice, the product percent of pass of the micro electronmechanical accelerometer manufacture method that provides according to the embodiment of the invention is more than 95%.
In addition, the manufacturing process of exempting to cut helps to form large undercut area, namely helps to form large-sized mass body.And large-sized mass body is so that the easier realization high sensitivity of micro electronmechanical accelerometer, for example can realize background noise be lower than 1 μ g/rt-hz, the linearity be better than 1% and full scale for+/-2.5g.
On the other hand, large mass body helps to improve the sensitivity of micro electronmechanical accelerometer, so that the micro electronmechanical accelerometer that provides according to the embodiment of the invention is lower to the technical requirement of the aspects such as encapsulation, electrical interface and control system.For example, because the impact of Blang's noise of large mass body almost can be ignored, therefore this micro electronmechanical accelerometer encapsulates under atmospheric pressure and gets final product, and need not to encapsulate under vacuum condition.Again for example, large mass body means large differential mode capacitor, so the signal to noise ratio (S/N ratio) of electrical output signal is higher, thereby can realize interface circuit at printed circuit board (PCB), realizes interface circuit and need not exploitation ASIC with high costs.
Description of drawings
The vertical view of the micro electronmechanical accelerometer that provides according to the embodiment of the invention is provided Fig. 1;
The cut-open view of mass body in each step of the manufacture method of the mass body in the micro electronmechanical accelerometer that provides according to the embodiment of the invention is provided Fig. 2 (a)-(d).
Description of reference numerals
1: mass body; 11: the first grooves; 12: the second grooves; 13: the first arc-spark stands; 14: the third electrode frame; 2: the first electric capacity; 21: the first traveling electrodes; 22: the first fixed electordes; 3: the second electric capacity; 31: the second traveling electrodes; 32: the second fixed electordes; 4: the first supports; 41: the second arc-spark stands; 5: the second supports; 51: the four arc-spark stands; 6: elastomeric element; 7: the three electric capacity; 71: the three traveling electrodes; 72: the three fixed electordes; 8: the four electric capacity; 81: the four traveling electrodes; 82: the four fixed electordes; 9: the three supports; 10: the four supports; 15: leg; 101: the first silicon layers; 102: oxide skin(coating); 103: the second silicon layers; 104: the first indentations; 105: the second indentations.
Embodiment
The structural representation of the micro electronmechanical accelerometer that provides according to the embodiment of the invention is provided Fig. 1, and this micro electronmechanical accelerometer comprises: mass body 1, the first electric capacity 2, the second electric capacity 3, the first support 4, the second support 5 and fixed mount (not shown).
Wherein, mass body 1 comprises the thick monocrystalline silicon layer of about 50 μ m, thereby and is hung up mobile in vertical direction by four springs.If act in vertical direction on the mass body 1 in the same direction deflection of mass body 1 owing to accelerate the inertial force of behavior generation.Amount of deflection is directly proportional with acceleration.Deflection causes electric capacity direct proportion differential change.Sensing capacitance comprises many (about 1000) is connected to the traveling electrode of mass body 1 and the fixed electorde of the fixed part that is connected to chip of same quantity.These two kinds of electrodes are all lacked (70 μ m), and fixed electorde is connected to the fixed electorde skeleton of thicker (20 μ m), and traveling electrode is connected to the traveling electrode skeleton.This configuration so that the electrode pair frequency the vibration in the bandwidth of accelerometer is not insensitive.
Particularly, the two ends of mass body 1 on the sensitive axis direction have respectively groove, and the groove of the top of present embodiment in Fig. 1 is as the first groove 11, and the groove of the below among Fig. 1 is the second groove 12.Have several the first electric capacity 2 in the first groove 11, each first electric capacity 2 is comprised of the first traveling electrode 21 and the first fixed electorde 22.Wherein the first traveling electrode 21 is connected with mass body 1, also can be integrally formed with mass body 1.The number of the first fixed electorde 22 is identical with the number of the first traveling electrode 21, and the first fixed electorde 22 stretches in the first groove 11 and matches with the first traveling electrode 21 and forms the first electric capacity 2.The first fixed electorde 22 also is connected on the first support 4.The first support 4 is connected to fixed mount.
The first traveling electrode 21 and the first fixed electorde 22 in the present embodiment are arranged by following mode.In the first groove 11, mass body 1 has several and equidirectional the first arc-spark stand of sensitive axis direction 13, the first arc-spark stands 13 and vertically is connected with several the first traveling electrodes 21 on the plane at micro electronmechanical accelerometer place; Also have several and equidirectional the second arc-spark stand 41 of sensitive axis direction on the first support 4, the second arc-spark stand 41 vertically is connected with several the first fixed electorde 22, the first traveling electrodes 21 and the first fixed electorde 22 and matches and form the first electric capacity 2 on the plane at micro electronmechanical accelerometer place.
Have several the second electric capacity 3 in the second groove 12, each second electric capacity 3 is comprised of the second traveling electrode 31 and the second fixed electorde 32.Wherein the second traveling electrode 31 is connected with mass body 1, also can be integrally formed with mass body 1.The number of the second fixed electorde 32 is identical with the number of the second traveling electrode 31, and the second fixed electorde 32 stretches in the second groove 12 and matches with the second traveling electrode 31 and forms the second electric capacity 3.The second fixed electorde 32 also is connected on the second support 5.The second support 5 is connected to fixed mount.Arranging of the second traveling electrode 31 and the second fixed electorde 32 is identical with the first traveling electrode 21 and the first fixed electorde 22.The second traveling electrode 31 is connected on the mass body 1 by third electrode frame 14, and the second fixed electorde 32 is connected on the second support 5 by the 4th arc-spark stand 51.
Preferably, mass body in the present embodiment 1 adopts silicon to make, and is I shape so that the first groove 11 and the second groove 12 be shaped as rectangle.Can realize higher unit-area capacitance along the sensitive axial two ends reeded this structure of tool, thereby so that micro electronmechanical accelerometer is realized high sensitivity.
Mass body 1 is connected to fixed mount movably along the sensitive axis direction.Preferably, four angles of mass body 1 are connected on the fixed mount by four elastomeric elements 6 respectively, so that mass body 1 can move along sensitive axis direction (being the above-below direction among Fig. 1) relative to fixed mount, this elastomeric element 6 can be spring.Mass body 1 moves along the sensitive axis direction, the first traveling electrode 21 and the second traveling electrode 31 are also thereupon mobile, and the first fixed electorde 22 and the second fixed electorde 32 are to be fixed on the fixed mount by the first support 4 and the second support 5 respectively, therefore the first fixed electorde 22 and the second fixed electorde 32 are fixing, thereby the distance between the distance between the first traveling electrode 21 and the first fixed electorde 22 and the second traveling electrode 31 and the second fixed electorde 32 changes, and produces capacitance variations.
Preferably, the structure of the first groove 11 and the second groove 12, and the first electric capacity 2 and the second electric capacity 3 structures are symmetrical.
The number of the first electric capacity 2 and the second electric capacity 3 can be identical in the present embodiment, is approximately 1000.Form the first traveling electrode 21 and first fixed electorde 22 of the first electric capacity 2 and form the second traveling electrode 31 of the second electric capacity 3 and the length of the second fixed electorde 32 is approximately 70 μ m.The thickness of the first support 4 and the second support 5 is approximately 20 μ m.
The vibration in the bandwidth range of micro electronmechanical accelerometer is not insensitive so that the frequency of electrode is to those in this configuration of the first electric capacity 2 and the second electric capacity 3 in the present embodiment, thereby can realize higher unit-area capacitance, realizes higher sensitivity.
Preferably, mass body 1 is not respectively arranged with several the 3rd electric capacity 7 and the 4th electric capacity 8 in the reeded other two ends of tool.The 3rd electric capacity 7 is comprised of several the 3rd traveling electrodes 71 and several the 3rd fixed electordes 72, several the 3rd traveling electrodes 71 are connected on the mass body 1, also can be integrally formed with mass body 1, several the 3rd fixed electordes 72 are connected on the fixed mount by the 3rd support 9.Several the 4th electric capacity 8 are comprised of several the 4th traveling electrodes 81 and several the 4th fixed electordes 82, and several the 4th traveling electrodes 81 are connected on the mass body 1, and several the 4th fixed electordes 82 are connected on the fixed mount by the 4th support 10.
The electrode that forms the 3rd electric capacity 7 and the 4th electric capacity 8 can be comb-like electrode, and the length that forms the electrode of the 3rd electric capacity 7 and the 4th electric capacity 8 can be shorter than the length of the electrode that forms the first electric capacity 2 and the second electric capacity 3, can be 70 μ m.
The quantity of the 3rd electric capacity 7 can be identical with the quantity of the 4th electric capacity 8.The 3rd electric capacity 7 and the 4th electric capacity 8 are used for when the micro electronmechanical accelerometer of operation, for micro electronmechanical accelerometer provides feedback force, thereby the formation closed-loop control, at this moment the electrostatic force of the 3rd electric capacity 7 and 8 generations of the 4th electric capacity can make mass body 1 move and vacate (null out).But because the mass body 1 that provides of present embodiment shared proportion in micro electronmechanical accelerometer is larger, even therefore open loop control also can realize above-mentioned purpose.
Preferably, shown in Fig. 2 (d), sensitive axial two side bottoms that are parallel to of mass body 1 also have leg 15.
Preferably, the material of fixed mount can be pottery, and the first support 4, the second support 5, the 3rd support 9 and the 4th support 10 can be fixed in the fixed mount by bonding mode.
During use, mass body 1, the first fixed electorde 22 and the second fixed electorde 32 are connected to interface circuit, this interface circuit can be the standard difference capacitance voltage transducer that is comprised of charge amplifier, analog filter and instrument amplifier.When inertial force that accelerated motion produces along the sensitive axis directive effect in mass body on 1 the time, mass body 1 is along sensitive axis direction deflect (deflect), amount of deflection is directly proportional with acceleration, and deflection causes the capacitance direct proportion differential change of the first electric capacity 2 and the second electric capacity 3.Interface circuit is converted to the variation of voltage with the variation of the electric capacity that records, thereby calculates extraneous energizing quantity.
The structural representation of SOI (Silicon-On-Insulator wafer) in each step of the manufacture method of the micro electronmechanical accelerometer that provides according to the embodiment of the invention is provided Fig. 2 (a)-(d).
Shown in Fig. 2 (a), SOI comprises the first silicon layer 101, oxide skin(coating) 102 and the second silicon layer 103 successively along stacked direction.Wherein, preferably, the thickness of the first silicon layer 101 is 450 μ m～600 μ m; The thickness of oxide skin(coating) 102 is 2 μ m～5 μ m; The thickness of the second silicon layer 103 is 40 μ m～60 μ m, more preferably 50 μ m.In addition, the material of oxide skin(coating) 102 can be preferably silicon dioxide.
For the SOI shown in Fig. 2 (a), be etched in the degree of depth that etches several the first indentation 104, the first indentations 104 on the first silicon layer 101 by first and extend to oxide skin(coating) 102.Wherein, preferably adopt deep reaction ion etching (Deep Reactive Ion EtchingSystem, DRIE) system to carry out this time etching.
In addition, the width of the first indentation 104 is preferably about 50 μ m.The pattern of the first indentation 104 is limited by the first mask, and namely the pattern of the first mask is corresponding with the configuration mode of the leg of mass body 1.This step is used for so that form the leg 15 of mass body 1 at the first silicon layer 101.
Then, for the SOI shown in Fig. 2 (b), be etched in the degree of depth that forms several the second indentation 105, the second indentations 105 on the second silicon layer 103 by second and also extend to oxide skin(coating) 102.Wherein, also preferably adopt the DRIE system to carry out this time etching.
In addition, shown in Fig. 2 (c), the second indentation 105 and the first indentation 104 non-overlappings, and the skew of about 50 μ m is arranged in the direction vertical with stacked direction.The pattern of the second indentation 105 is limited by the second mask, and namely the configuration mode of the electrode in the pattern of the second mask and the mass body 1 is corresponding.The second indentation 105 is used for so that form the first groove 11, the second groove 12, several first traveling electrodes 21 and several the second traveling electrodes 31 on the second silicon layer 103.Preferably, the second indentation 105 also is used to form the 3rd traveling electrode 71 and the 4th traveling electrode 81.
Need to prove, although occurring in the second etching with the first etching is illustrated as example before, but those skilled in the art should be able to understand, in fact the execution sequence of this twice etching can be any, for example can carry out first the second etching and carry out again the first etching, also can carry out simultaneously the first etching and the second etching, as long as can form required the first indentation and the second indentation.
At last, for the SOI shown in Fig. 2 (c), by oxide skin(coating) 102 is carried out etching, so that the first silicon layer 101 between two legs 15 of mass body 1 breaks away from, thereby form mass body 1.Wherein, preferably come oxide skin(coating) 102 is carried out etching by the high frequency gas phase etching technics that utilizes hydrofluorite (HF) steam, thereby obtain the mass body 1 shown in Fig. 2 (d).
Above-mentioned manufacture method to the size of mass body without limits, mass body 1 can be realized 7mm * 4mm even the structure of high surface area more in the present embodiment.
The micro electronmechanical accelerometer that provides according to the embodiment of the invention can be applied to but in the application that is not limited to have relatively high expectations such as oil, gas prospecting, accurate tilt induction and vehicle stabilization and navigation etc.
The above; be the specific embodiment of the present invention only, but protection scope of the present invention is not limited to this, anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (14)
1. the manufacture method of a micro electronmechanical accelerometer comprises:
The Silicon-On-Insulator wafer that comprises the first silicon layer, oxide skin(coating) and the second silicon layer is carried out the first etching, in described the first silicon layer, to form several first indentations that extend to described oxide skin(coating), thereby utilize described the first silicon layer to form two legs of the mass body of described micro electronmechanical accelerometer, wherein said the first silicon layer, described oxide skin(coating) and described the second silicon layer stack gradually along stacked direction;
Described Silicon-On-Insulator wafer is carried out the second etching, extend to several second indentations of described oxide skin(coating) in described the second silicon layer, to form, thereby utilize described the second silicon layer to form electrode in the mass body of described micro electronmechanical accelerometer; And
Described oxide skin(coating) is carried out etching, so that the first silicon layer between described two legs breaks away from.
2. the manufacture method of micro electronmechanical accelerometer according to claim 1 is characterized in that,
Carry out described the first etching by utilizing the first mask that described Silicon-On-Insulator wafer is carried out deep reaction ion etching, the pattern of wherein said the first mask is corresponding with the configuration mode of described leg; And/or
Carry out described the second etching by utilizing the second mask that described Silicon-On-Insulator wafer is carried out deep reaction ion etching, the configuration mode of the electrode in the pattern of wherein said the second mask and the described mass body is corresponding.
3. the manufacture method of micro electronmechanical accelerometer according to claim 1 is characterized in that, carries out etching to described oxide skin(coating) by utilizing hydrofluorite steam to carry out high frequency gas phase etching.
4. the manufacture method of micro electronmechanical accelerometer according to claim 1, it is characterized in that, the thickness of described the first silicon layer is 450 μ m～600 μ m, and the thickness of described oxide skin(coating) is 2 μ m～5 μ m, and the thickness of described the second silicon layer is 40 μ m～60 μ m.
5. the manufacture method of micro electronmechanical accelerometer according to claim 1 is characterized in that, described the first indentation is offset 50 μ m with described the second indentation in the direction vertical with described stacked direction.
6. micro electronmechanical accelerometer comprises:
Mass body, it has respectively the first groove and the second groove along the two ends on the sensitive axis direction, be provided with several the first traveling electrodes in described the first groove, is provided with several the second traveling electrodes in described the second groove;
The first support, it is connected with several and stretches into the first fixed electorde into described the first groove, and each described first fixed electorde and each described the first traveling electrode form several the first electric capacity;
The second support, it is connected with several and stretches into the second fixed electorde into described the second groove, and each described second fixed electorde and each described the second traveling electrode form several the second electric capacity; And
Fixed mount, described mass body is connected to described fixed mount movably along described sensitive axis direction, and described the first support and the second support are fixed on the described fixed mount.
7. micro electronmechanical accelerometer according to claim 6 is characterized in that,
Be provided with the first arc-spark stand that several are connected with described mass body along described sensitive axis direction in described the first groove, described the first arc-spark stand vertically is connected with several described first traveling electrodes on the plane at described micro electronmechanical accelerometer place;
Also be provided with several and the second arc-spark stand that described the first support is connected along described sensitive axis direction in described the first groove, described the second arc-spark stand vertically is connected with several described first fixed electordes on the plane at described micro electronmechanical accelerometer place;
Be provided with the third electrode frame that several are connected with described mass body along described sensitive axis direction in described the second groove, described third electrode frame vertically is connected with several described second traveling electrodes on the plane at described micro electronmechanical accelerometer place;
Also be provided with several and the 4th arc-spark stand that described the second support is connected along described sensitive axis direction in described the second groove, described the 4th arc-spark stand vertically is connected with several described second fixed electordes on the plane at described micro electronmechanical accelerometer place.
8. micro electronmechanical accelerometer according to claim 6, it is characterized in that, described mass body also be not respectively arranged with several the 3rd traveling electrodes and the 4th traveling electrode along the axial two ends of described sensitivity, each described the 3rd traveling electrode forms the 3rd electric capacity with several the 3rd fixed electordes respectively, and each described the 4th traveling electrode forms the 4th electric capacity with several the 4th fixed electordes respectively.
9. micro electronmechanical accelerometer according to claim 8 is characterized in that, each described the 3rd fixed electorde is connected to described fixed mount by the 3rd support, and each described the 4th fixed electorde is connected to described fixed mount by the 4th support.
10. micro electronmechanical accelerometer according to claim 8 is characterized in that, the length that forms each electrode of described the 3rd electric capacity and described the 4th electric capacity is longer than the length of each electrode that forms described the first electric capacity and described the second electric capacity.
11. micro electronmechanical accelerometer according to claim 8 is characterized in that, described the first traveling electrode, described the second traveling electrode, described the 3rd traveling electrode and described the 4th traveling electrode and described mass body are integrally formed.
12. micro electronmechanical accelerometer according to claim 6 is characterized in that, four angles of described mass body are connected with described fixed mount by elastomeric element respectively.
13. micro electronmechanical accelerometer according to claim 6 is characterized in that, the material of described mass body is silicon.
14. micro electronmechanical accelerometer according to claim 6 is characterized in that the bottom of described mass body has leg.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210353245.3A CN102879607B (en) | 2012-09-20 | 2012-09-20 | Micro-electro-mechanical accelerometer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210353245.3A CN102879607B (en) | 2012-09-20 | 2012-09-20 | Micro-electro-mechanical accelerometer and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102879607A true CN102879607A (en) | 2013-01-16 |
| CN102879607B CN102879607B (en) | 2014-08-06 |
Family
ID=47481004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210353245.3A Active CN102879607B (en) | 2012-09-20 | 2012-09-20 | Micro-electro-mechanical accelerometer and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102879607B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105399047B (en) * | 2015-11-10 | 2017-07-28 | 中国工程物理研究院电子工程研究所 | A kind of processing method of many electric capacity multi-finger Micro-accelerometers |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1359007A (en) * | 2002-01-29 | 2002-07-17 | 清华大学 | Comb teeth type body silicon working microchemical accelerometer |
| CN101625372A (en) * | 2009-08-19 | 2010-01-13 | 北京大学 | Micro machine differential capacitance accelerometer with symmetrical structure |
| CN101710133A (en) * | 2009-11-11 | 2010-05-19 | 中国科学院上海光学精密机械研究所 | capacitive accelerometer |
| CN102507981A (en) * | 2011-11-02 | 2012-06-20 | 重庆理工大学 | Single-sensitive-mass-element silicon micro-two-dimensional acceleration transducer with coupled beam structure |
-
2012
- 2012-09-20 CN CN201210353245.3A patent/CN102879607B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1359007A (en) * | 2002-01-29 | 2002-07-17 | 清华大学 | Comb teeth type body silicon working microchemical accelerometer |
| CN101625372A (en) * | 2009-08-19 | 2010-01-13 | 北京大学 | Micro machine differential capacitance accelerometer with symmetrical structure |
| CN101710133A (en) * | 2009-11-11 | 2010-05-19 | 中国科学院上海光学精密机械研究所 | capacitive accelerometer |
| CN102507981A (en) * | 2011-11-02 | 2012-06-20 | 重庆理工大学 | Single-sensitive-mass-element silicon micro-two-dimensional acceleration transducer with coupled beam structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102879607B (en) | 2014-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5016747B2 (en) | Micro-electromechanical structures that are insensitive to mechanical stress | |
| JP5009292B2 (en) | Stress relaxation mechanism in MEMS device and manufacturing method thereof | |
| Mineta et al. | Three-axis capacitive accelerometer with uniform axial sensitivities | |
| US9061895B2 (en) | Micromechanical structure comprising a mobile part having stops for out-of plane displacements of the structure and its production process | |
| US20060207327A1 (en) | Linear accelerometer | |
| US7469588B2 (en) | MEMS vertical comb drive with improved vibration performance | |
| US7617729B2 (en) | Accelerometer | |
| US7250322B2 (en) | Method of making microsensor | |
| US10647570B2 (en) | Fabrication process for a symmetrical MEMS accelerometer | |
| US9828242B2 (en) | Accelerometer and its fabrication technique | |
| US10900995B2 (en) | Tri-axial MEMS accelerometer | |
| US9557346B2 (en) | Accelerometer and its fabrication technique | |
| EP3657178B1 (en) | Accelerometer | |
| US9128114B2 (en) | Capacitive sensor device and a method of sensing accelerations | |
| CN102879607B (en) | Micro-electro-mechanical accelerometer and manufacturing method thereof | |
| US8329491B2 (en) | Mechanical quantity sensor and method of manufacturing the same | |
| CN111908419B (en) | Sandwich type MEMS device structure | |
| Xiao et al. | A new symmetrical beam-mass structure for accelerometers by anisotropic etching without convex corner compensation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Liu Li Inventor after: Yue Xinbo Inventor before: Liu Li Inventor before: Zhao Bangliu Inventor before: Yue Xinbo |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LIU LI ZHAO BANGLIU YUE XINBO TO: LIU LI YUE XINBO |