CN102867852A - 晶体管及晶体管的形成方法 - Google Patents
晶体管及晶体管的形成方法 Download PDFInfo
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- CN102867852A CN102867852A CN2011101853031A CN201110185303A CN102867852A CN 102867852 A CN102867852 A CN 102867852A CN 2011101853031 A CN2011101853031 A CN 2011101853031A CN 201110185303 A CN201110185303 A CN 201110185303A CN 102867852 A CN102867852 A CN 102867852A
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CN201110185303.1A CN102867852B (zh) | 2011-07-04 | 2011-07-04 | 晶体管及晶体管的形成方法 |
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CN201110185303.1A CN102867852B (zh) | 2011-07-04 | 2011-07-04 | 晶体管及晶体管的形成方法 |
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CN102867852A true CN102867852A (zh) | 2013-01-09 |
CN102867852B CN102867852B (zh) | 2016-08-10 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104681562A (zh) * | 2013-11-28 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 一种集成电路及其制造方法和电子装置 |
CN105489477A (zh) * | 2014-09-18 | 2016-04-13 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
CN111952186A (zh) * | 2020-08-21 | 2020-11-17 | 中国科学院上海微***与信息技术研究所 | 基于空腔包围结构的场效应晶体管及制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003178975A (ja) * | 2001-12-11 | 2003-06-27 | Sharp Corp | 半導体装置及びその製造方法 |
JP2003178977A (ja) * | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 半導体結晶及びその製造方法 |
JP2004146472A (ja) * | 2002-10-22 | 2004-05-20 | Sharp Corp | 半導体装置及び半導体装置製造方法 |
WO2005020314A1 (ja) * | 2003-08-20 | 2005-03-03 | Nec Corporation | 空洞を有するシリコン基板上の高移動度misfet半導体装置及びその製造方法 |
US20080044979A1 (en) * | 2006-08-18 | 2008-02-21 | Micron Technology, Inc. | Integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor construction; and methods of forming integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor constructions |
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2011
- 2011-07-04 CN CN201110185303.1A patent/CN102867852B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003178975A (ja) * | 2001-12-11 | 2003-06-27 | Sharp Corp | 半導体装置及びその製造方法 |
JP2003178977A (ja) * | 2001-12-12 | 2003-06-27 | Matsushita Electric Ind Co Ltd | 半導体結晶及びその製造方法 |
JP2004146472A (ja) * | 2002-10-22 | 2004-05-20 | Sharp Corp | 半導体装置及び半導体装置製造方法 |
WO2005020314A1 (ja) * | 2003-08-20 | 2005-03-03 | Nec Corporation | 空洞を有するシリコン基板上の高移動度misfet半導体装置及びその製造方法 |
US20080044979A1 (en) * | 2006-08-18 | 2008-02-21 | Micron Technology, Inc. | Integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor construction; and methods of forming integrated circuitry, electromagnetic radiation interaction components, transistor devices and semiconductor constructions |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104681562A (zh) * | 2013-11-28 | 2015-06-03 | 中芯国际集成电路制造(上海)有限公司 | 一种集成电路及其制造方法和电子装置 |
CN105489477A (zh) * | 2014-09-18 | 2016-04-13 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
CN105489477B (zh) * | 2014-09-18 | 2018-09-11 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
CN111952186A (zh) * | 2020-08-21 | 2020-11-17 | 中国科学院上海微***与信息技术研究所 | 基于空腔包围结构的场效应晶体管及制备方法 |
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Publication number | Publication date |
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CN102867852B (zh) | 2016-08-10 |
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Address after: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee after: Institute of Microelectronics, Chinese Academy of Sciences Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NMC Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Effective date of registration: 20190227 Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Wenchang Road 8 Patentee after: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Co-patentee before: BEIJING NAURA MICROELECTRONICS EQUIPMENT Co.,Ltd. Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |