CN103647521A - Multi-measuring range MEMS CMOS electrostatic comb resonator - Google Patents
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Abstract
The invention relates to a multi-measuring range MEMS CMOS electrostatic comb resonator. The multi-measuring range MEMS CMOS electrostatic comb resonator is characterized by comprising six electrostatic comb resonator structures with different measuring ranges. Each resonator unit comprises an upper anchor point, a lower anchor point, a first interdigital capacitor, a second interdigital capacitor, a third interdigital capacitor, a fourth interdigital capacitor, an upper elastic beam, a lower elastic beam, an oscillator mass block, a left anchor point and a right anchor point; the oscillator mass blocks comprise left mass blocks and right mass blocks; the first interdigital capacitors are arranged on the left side surfaces of the upper portions and the lower portions of the left mass blocks; the second interdigital capacitors are arranged on the right side surfaces of the upper portions and the lower portions of the right mass blocks; the third interdigital capacitors are arranged at the left anchor points; the fourth interdigital capacitors are arranged at the right anchor points; the first interdigital capacitors and the third interdigital capacitors are equidistantly configured in a crossed manner; the second interdigital capacitors and the fourth interdigital capacitors are equidistantly configured in a crossed manner; and the interdigital capacitors of each resonator unit are different in terms of size. The multi-measuring range MEMS CMOS electrostatic comb resonator improves the sensitivity and measuring scope of a capacitive pressure sensor.
Description
Technical field
The present invention relates to a kind of multrirange MEMS CMOS static broach resonator, especially based on CMOS DPTM(Double Poly Triple Metal) the multrirange MEMS CMOS static broach resonator of mixed signal technique, belong to MEMS device design and manufacturing technology field.
Background technology
Along with scientific and technological development, MEMS technology is more and more extensive in the army and the people's application.The mechanical oscillation of micro-structural can encourage by a lot of methods, for example: piezoelectricity, thermal expansion, electrostatic force and magnetostatic power, and due to simple by the mode of electrostatic force excitation, again can be compatible with micromachining technology in technique, so static broach resonator becomes a kind of important basic function unit in MEMS.Static broach resonator has the conversion that can realize between mechanical energy and other energy, can produce the advantages such as larger vibration amplitude, flexible design, can be widely used in microelectromechanical systems (MEMS) devices such as micro-resonator, micro-filter, microactrator, in fields such as radio communication, defence and military, consumer electronics, have very important effect.
Based on manufacture method, micro mechanical device can be divided into two large classes: the micro mechanical device that the micro mechanical device that body materials processing obtains and surface film processing obtain.Body micro-resonator has higher sensitivity and lower noise than surface film micro-resonator.But the advantage of surface micro technology is relatively low manufacturing cost, the monolithic that also can easily realize MEMS and signal deteching circuit is simultaneously integrated.By contrasting a series of MEMS technique, find that CMOS MEMS technique the most easily realizes low-cost and high performance combination.This is mainly because CMOS MEMS technique can be used standard CMOS processing line processing MEMS system, thereby has realized low cost.Simultaneously this technique allow to adopt between MEMS device and testing circuit metal interconnected, and these two modules can arrange very near, this has reduced parasitic parameter greatly, thereby has guaranteed high accuracy and low-noise performance.
Existing resonator structure generally comprises the mass that is provided with broach, broach and electrode crossing setting, and owing to connecting YIPAISHU tooth on mass, the structure of mass is generally elongated; This structure causes the two ends of mass easily to form perk, when reality is used, has influence on the normal work of resonator.Mainly there is following defect in existing resonator: (1) cannot with CMOS process compatible, the CMOS technique of sensor chip is integrated is the trend of sensor research and development; (2) single range, can only test for a certain specific range ability, and it can not be used to greatest extent, causes the waste of resource.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of multrirange MEMS CMOS static broach resonator is provided, improved measuring range, made up the deficiency of single-sensor measuring range.
According to technical scheme provided by the invention, described multrirange MEMS CMOS static broach resonator, it is characterized in that: comprise the first resonator element linking together, the second resonator element, the 3rd resonator element, the 4th resonator element, the 5th resonator element and sixth resonator unit, the first resonator element, the second resonator element, the 3rd resonator element, the 4th resonator element, the 5th resonator element and sixth resonator unit have respectively two outputs, the first resonator element, the second resonator element, the 3rd resonator element, the 4th resonator element, the input of the 5th resonator element and sixth resonator unit is merged and is connected by metal connecting line, described the first resonator element, the second resonator element, the 3rd resonator element, the 4th resonator element, the 5th resonator element and sixth resonator unit comprise respectively substrate and suprabasil structure sheaf, and structure sheaf comprises that anchor point, anchorage, the first interdigital capacitor, the second interdigital capacitor, third fork refer to electric capacity, the 4th interdigital capacitor, upper spring beam, lower spring beam, oscillator mass, left anchor point and right anchor point, described oscillator mass comprises left part mass and right part mass, and left part mass is connected by tie-beam with right part mass, described upper spring beam and lower spring beam comprise respectively four folding beams, and four folding beams of upper spring beam connect respectively anchor point and oscillator mass, and four folding beams of lower spring beam connect respectively anchorage and oscillator mass, on the left surface of described left part mass, be provided with the first prong electric capacity that comb teeth-shaped is arranged, on the right flank of right part mass, be provided with the second interdigital capacitor that comb teeth-shaped is arranged, the third fork that is provided with comb teeth-shaped arrangement on side at described left anchor point near left part mass refers to electric capacity, is provided with the 4th fork electric capacity that comb teeth-shaped is arranged on the side at right anchor point near right part mass, described the first interdigital capacitor refers between the space of electric capacity two third forks, and the first interdigital capacitor and third fork refer to that electric capacity is equidistant cross-over configuration, described the second interdigital capacitor is between the space of two the 4th interdigital capacitors, and the second interdigital capacitor and the 4th interdigital capacitor are equidistant cross-over configuration.
Varying in size of the interdigital capacitor of described the first resonator element, the second resonator element, the 3rd resonator element, the 4th resonator element, the 5th resonator element and sixth resonator unit.
Described the first interdigital capacitor, the second interdigital capacitor, third fork refers to electric capacity, the 4th interdigital capacitor, upper spring beam, lower spring beam, the structure of oscillator mass and tie-beam is vertical deposition overlaying structure, this vertical deposition overlaying structure is upwards followed successively by first medium layer from bottom, the first metallic aluminium figure layer, second medium layer, the second metallic aluminium figure layer, the 3rd dielectric layer, the 3rd metallic aluminium figure layer and passivation layer, the first metallic aluminium figure layer is connected by the first tungsten plug being arranged in second medium layer with the second metallic aluminium figure layer, the second metallic aluminium figure layer is connected by the second tungsten plug being arranged in the 3rd dielectric layer with the 3rd metallic aluminium figure layer, a plurality of side walls perpendicular to substrate are set on this vertical deposition overlaying structure, and side wall is extended to the upper surface of substrate by the upper surface of passivation layer, in the substrate of this vertical deposition overlaying structure bottom, hanging structure is set.
Described hanging structure is extended by the based opposite side of a side of substrate on Width, and the width of hanging structure is less than the width of substrate; Described hanging structure is extended by the based lower surface of upper surface of substrate in short transverse, and the height of hanging structure is less than the height of substrate.
Described upper anchor point, anchorage, left anchor point and right anchor point comprise depressed part and protuberance; The structure of described protuberance is upwards followed successively by first medium layer, the first metallic aluminium figure layer, second medium layer, the second metallic aluminium figure layer, the 3rd dielectric layer, the 3rd metallic aluminium figure layer and passivation layer from bottom, the first metallic aluminium figure layer is connected by the first tungsten plug being arranged in second medium layer with the second metallic aluminium figure layer, and the second metallic aluminium figure layer is connected by the second tungsten plug being arranged in the 3rd dielectric layer with the 3rd metallic aluminium figure layer; The structure of described depressed part is upwards followed successively by first medium layer, the first metallic aluminium figure layer, second medium layer, the second metallic aluminium figure layer and the 3rd dielectric layer from bottom, and the first metallic aluminium figure layer is connected by the first tungsten plug being arranged in second medium layer with the second metallic aluminium figure layer.
The output of described the first resonator element, the second resonator element, the 3rd resonator element, the 4th resonator element, the 5th resonator element and sixth resonator unit is drawn by the 3rd metallic aluminium figure layer, and the input of the first resonator element, the second resonator element, the 3rd resonator element, the 4th resonator element, the 5th resonator element and sixth resonator unit is introduced by the second metallic aluminium figure layer.
The middle part in described left part mass left side arranges to recessed left part cell body inside left part mass, and the middle part on right part mass right side arranges to recessed right part cell body inside right part mass.
Described left anchor point and right anchor point are all rectangular bulk, and upper anchor point and anchorage are square shape.
Described substrate is silicon base.
The present invention has the following advantages: (1) the present invention can select between measuring range and sensitivity, has realized the intellectuality of transducer; (2) the present invention adopts six static broach resonators of different ranges to carry out the mode that segmentation static broach resonator is measured, thereby improve measuring range by a sensor array, make up the deficiency of single-sensor measuring range, improved sensitivity and the measuring range of condenser type static broach resonator.
Accompanying drawing explanation
Fig. 1 is the vertical view of resonator of the present invention.
Fig. 2 is the vertical view of resonator element of the present invention.
Fig. 3 is the cutaway view that described the first interdigital capacitor, the second interdigital capacitor, third fork refer to electric capacity, the 4th interdigital capacitor, upper spring beam, lower spring beam, oscillator mass and tie-beam.
Fig. 4 is the cutaway view of described anchor point, right anchor point, upper anchor point and anchorage.
Sequence number in figure is: upper anchor point 1-1, anchorage 1-2, the first interdigital capacitor 2-1, the second interdigital capacitor 2-2, third fork refers to electric capacity 2-3, the 4th interdigital capacitor 2-4, upper spring beam 3-1, lower spring beam 3-2, left part mass 4-1, left part cell body 4-11, right part mass 4-2, right part cell body 4-21, tie-beam 5, left anchor point 6-1, right anchor point 6-2, substrate 7, first medium layer 8, the first metallic aluminium figure layer 9, second medium layer 10, the first tungsten plug 11, the second metallic aluminium figure layer 12, the 3rd dielectric layer 13, the second tungsten plug 14, the 3rd metallic aluminium figure layer 15, passivation layer 16, side wall 17, hanging structure 18, depressed part 19, protuberance 20, the first resonator element 100, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the 5th resonator element 500, sixth resonator unit 600.
Embodiment
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 1: described multrirange MEMS CMOS static broach resonator comprises the first resonator element 100 linking together, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the 5th resonator element 500 and sixth resonator unit 600, the first resonator elements 100, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the 5th resonator element 500 and sixth resonator unit 600 have respectively two outputs, and (as shown in Figure 1, the input of the first resonator element 100 is 110, the input of 120, the second resonator elements 200 is 210, the input of 220, the three resonator elements 300 is 310, the input of 320, the four resonator elements 400 is 410, the input of 420, the five resonator elements 500 is 510, 520, the input of sixth resonator unit 600 is 610, 620), the first resonator element 100, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the input of the 5th resonator element 500 and sixth resonator unit 600 is merged and is connected rear total output 01 that imports by metal connecting line, 02,
As shown in Figure 2, described the first resonator element 100, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the 5th resonator element 500 and sixth resonator unit 600 comprise respectively the structure sheaf in substrate 7 and substrate 7, structure sheaf comprises anchor point 1-1, anchorage 1-2, the first interdigital capacitor 2-1, the second interdigital capacitor 2-2, third fork refers to electric capacity 2-3, the 4th interdigital capacitor 2-4, upper spring beam 3-1, lower spring beam 3-2, oscillator mass, left anchor point 6-1 and right anchor point 6-2, left anchor point 6-1 and right anchor point 6-2 are all rectangular bulk, upper anchor point 1-1 and anchorage 1-2 are square shape, described oscillator mass comprises left part mass 4-1 and right part mass 4-2, and left part mass 4-1 is connected by tie-beam 5 with right part mass 4-2, described upper spring beam 3-1 and lower spring beam 3-1 comprise respectively four folding beams, and four folding beams of upper spring beam 3-1 connect respectively anchor point 1-1 and oscillator mass, and four folding beams of lower spring beam 3-2 connect respectively anchorage 1-2 and oscillator mass, the middle part in described left part mass 4-1 left side arranges to recessed left part cell body 4-11 inside left part mass 4-1, and the middle part on right part mass 4-2 right side arranges to recessed right part cell body 4-21 inside right part mass 4-2, on the left surface of described left part mass 4-1 upper and lower (except the part of left part cell body 4-11), be provided with the first prong electric capacity 2-1 that comb teeth-shaped is arranged, on the right flank of right part mass 4-2 upper and lower (except the part of right part cell body 4-21), be provided with the second interdigital capacitor 2-2 that comb teeth-shaped is arranged, the third fork that is provided with comb teeth-shaped arrangement on side at described left anchor point 6-1 near left part mass 4-1 refers to electric capacity 2-3, is provided with the 4th fork electric capacity 2-4 that comb teeth-shaped is arranged on the side at right anchor point 6-2 near right part mass 4-2, described the first interdigital capacitor 2-1 refers between the space of electric capacity 2-3 two third forks, and the first interdigital capacitor 2-1 and third fork refer to that electric capacity 2-3 is equidistant cross-over configuration, described the second interdigital capacitor 2-2 is between the space of two the 4th interdigital capacitor 2-4, and the second interdigital capacitor 2-2 and the 4th interdigital capacitor 2-4 are equidistant cross-over configuration, the third fork that the first interdigital capacitor structure 2-1 that in the time of work, oscillator mass connects is connected with left anchor point 4-1 with the second interdigital capacitor 2-2 refers to that the 4th interdigital capacitor 2-4 that capacitance structure 2-3, right anchor point 4-2 connect interacts under the elastic force of upper spring beam 3-1, lower spring beam 3-2, changes total capacitance,
Varying in size of the interdigital capacitor of described the first resonator element 100, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the 5th resonator element 500 and sixth resonator unit 600;
Wherein, described substrate 7 is silicon base;
Wherein, described the first interdigital capacitor 2-1, the second interdigital capacitor 2-2, third fork refers to electric capacity 2-3, the 4th interdigital capacitor 2-4, upper spring beam 3-1, lower spring beam 3-2, the structure of oscillator mass and tie-beam 5 is vertical deposition overlaying structure, as shown in Figure 3, this vertical deposition overlaying structure is upwards followed successively by first medium layer 8 from bottom, the first metallic aluminium figure layer 9, second medium layer 10, the second metallic aluminium figure layer 12, the 3rd dielectric layer 13, the 3rd metallic aluminium figure layer 15 and passivation layer 16, the first metallic aluminium figure layer 9 is connected by the first tungsten plug 11 being arranged in second medium layer 10 with the second metallic aluminium figure layer 12, the second metallic aluminium figure layer 12 is connected by the second tungsten plug 14 being arranged in the 3rd dielectric layer 13 with the 3rd metallic aluminium figure layer 15, a plurality of side walls 17 perpendicular to substrate 7 are set on this vertical deposition overlaying structure, and side wall 17 is extended to the upper surface of substrate 7 by the upper surface of passivation layer 16, in the substrate 7 of this vertical deposition overlaying structure bottom, hanging structure 18 is set, described hanging structure 18 is extended by the opposite side of a side direction substrate 7 of substrate 7 on Width, and the width of hanging structure 18 is less than the width of substrate 7, described hanging structure 18 is extended by the lower surface of the upper surface basad 7 of substrate 7 in short transverse, and the height of hanging structure 18 is less than the height of substrate 7, described the first interdigital capacitor 2-1, the second interdigital capacitor 2-2, third fork refer to electric capacity 2-3 and the 4th interdigital capacitor 2-4 mainly by the first metallic aluminium figure layer 9, the second metallic aluminium figure layer 12 and the 3rd metallic aluminium figure layer 15 by the first tungsten plug 11 on second medium layer 10 and the 3rd dielectric layer 13 and the second tungsten plug 14 connections in equipotential, form pole plate,
As shown in Figure 4, described upper anchor point 1-1, anchorage 1-2, left anchor point 6-1 and right anchor point 6-2 comprise depressed part 19 and protuberance 20; The structure of described protuberance 20 is upwards followed successively by first medium layer 8, the first metallic aluminium figure layer 9, second medium layer 10, the second metallic aluminium figure layer 12, the 3rd dielectric layer 13, the 3rd metallic aluminium figure layer 15 and passivation layer 16 from bottom, the first metallic aluminium figure layer 9 is connected by the first tungsten plug 11 being arranged in second medium layer 10 with the second metallic aluminium figure layer 12, and the second metallic aluminium figure layer 12 is connected by the second tungsten plug 14 being arranged in the 3rd dielectric layer 13 with the 3rd metallic aluminium figure layer 15; The structure of described depressed part 19 is upwards followed successively by first medium layer 8, the first metallic aluminium figure layer 9, second medium layer 10, the second metallic aluminium figure layer 12 and the 3rd dielectric layer 13, the first metallic aluminium figure layers 9 from bottom and is connected by the first tungsten plug 11 being arranged in second medium layer 10 with the second metallic aluminium figure layer 12;
The output of described the first resonator element 100, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the 5th resonator element 500 and sixth resonator unit 600 is drawn by the 3rd metallic aluminium figure layer 15, and the input of the first resonator element 100, the second resonator element 200, the 3rd resonator element 300, the 4th resonator element 400, the 5th resonator element 500 and sixth resonator unit 600 is introduced by the second metallic aluminium figure layer 12.
Multrirange MEMS CMOS static broach resonator of the present invention comprises that the static broach resonator element (the first resonator element 100, the second resonator element 200, the 3rd resonator element 300, the 5th resonator element 500, sixth resonator unit 600) of five different range sizes and one is not with the reference capacitance unit (the 4th resonator element 400) of acceleration change, each resonator element varies in size according to interdigital capacitor, is respectively used to the measurement of different range.When work, in a certain static broach resonator situation, the first resonator element 100 and the second resonator element 200 are saturated, and that the 5th resonator element 500 and sixth resonator unit 600 are out of shape in this static broach resonator situation is very little, at this moment just can select the 3rd resonator element 300 as measuring unit, wherein the 4th resonator element 400 conducts are with reference to unit.Adopting the transducer of design in this way can select between measuring range and sensitivity, has realized the intellectuality of transducer.Sensitivity and the measuring range of condenser type static broach resonator have been improved, adopted six static broach resonators of different ranges to carry out the mode that segmentation static broach resonator is measured, thereby by a sensor array, improve measuring range, made up the deficiency of single-sensor measuring range.
Claims (9)
1. a multrirange MEMS CMOS static broach resonator, it is characterized in that: comprise the first resonator element (100) linking together, the second resonator element (200), the 3rd resonator element (300), the 4th resonator element (400), the 5th resonator element (500) and sixth resonator unit (600), the first resonator element (100), the second resonator element (200), the 3rd resonator element (300), the 4th resonator element (400), the 5th resonator element (500) and sixth resonator unit (600) have respectively two outputs, the first resonator element (100), the second resonator element (200), the 3rd resonator element (300), the 4th resonator element (400), the input of the 5th resonator element (500) and sixth resonator unit (600) is merged and is connected by metal connecting line, described the first resonator element (100), the second resonator element (200), the 3rd resonator element (300), the 4th resonator element (400), the 5th resonator element (500) and sixth resonator unit (600) comprise respectively the structure sheaf in substrate (7) and substrate (7), structure sheaf comprises anchor point (1-1), anchorage (1-2), the first interdigital capacitor (2-1), the second interdigital capacitor (2-2), third fork refers to electric capacity (2-3), the 4th interdigital capacitor (2-4), upper spring beam (3-1), lower spring beam (3-2), oscillator mass, left anchor point (6-1) and right anchor point (6-2), described oscillator mass comprises left part mass (4-1) and right part mass (4-2), and left part mass (4-1) is connected by tie-beam (5) with right part mass (4-2), described upper spring beam (3-1) and lower spring beam (3-1) comprise respectively four folding beams, four folding beams of upper spring beam (3-1) connect respectively anchor point (1-1) and oscillator mass, and four folding beams of lower spring beam (3-2) connect respectively anchorage (1-2) and oscillator mass, on the left surface of described left part mass (4-1), be provided with the first prong electric capacity (2-1) that comb teeth-shaped is arranged, on the right flank of right part mass (4-2), be provided with the second interdigital capacitor (2-2) that comb teeth-shaped is arranged, at described left anchor point (6-1), near the third fork that is provided with comb teeth-shaped arrangement on the side of left part mass (4-1), refer to electric capacity (2-3), on the close side of right part mass (4-2) of right anchor point (6-2), be provided with the 4th fork electric capacity (2-4) that comb teeth-shaped is arranged, described the first interdigital capacitor (2-1) is positioned at two third forks and refers between the space of electric capacity (2-3), and the first interdigital capacitor (2-1) refers to that with third fork electric capacity (2-3) is equidistant cross-over configuration, described the second interdigital capacitor (2-2) is positioned between the space of two the 4th interdigital capacitors (2-4), and the second interdigital capacitor (2-2) is equidistant cross-over configuration with the 4th interdigital capacitor (2-4).
2. multrirange MEMS CMOS static broach resonator as claimed in claim 1, is characterized in that: the varying in size of the interdigital capacitor of described the first resonator element (100), the second resonator element (200), the 3rd resonator element (300), the 4th resonator element (400), the 5th resonator element (500) and sixth resonator unit (600).
3. multrirange MEMS CMOS static broach resonator as claimed in claim 1, it is characterized in that: described the first interdigital capacitor (2-1), the second interdigital capacitor (2-2), third fork refers to electric capacity (2-3), the 4th interdigital capacitor (2-4), upper spring beam (3-1), lower spring beam (3-2), the structure of oscillator mass and tie-beam (5) is vertical deposition overlaying structure, this vertical deposition overlaying structure is upwards followed successively by first medium layer (8) from bottom, the first metallic aluminium figure layer (9), second medium layer (10), the second metallic aluminium figure layer (12), the 3rd dielectric layer (13), the 3rd metallic aluminium figure layer (15) and passivation layer (16), the first metallic aluminium figure layer (9) is connected by the first tungsten plug (11) being arranged in second medium layer (10) with the second metallic aluminium figure layer (12), the second metallic aluminium figure layer (12) is connected by the second tungsten plug (14) being arranged in the 3rd dielectric layer (13) with the 3rd metallic aluminium figure layer (15), a plurality of side walls perpendicular to substrate (7) (17) are set on this vertical deposition overlaying structure, side wall (17) is extended to the upper surface of substrate (7) by the upper surface of passivation layer (16), in the substrate (7) of this vertical deposition overlaying structure bottom, hanging structure (18) is set.
4. multrirange MEMS CMOS static broach resonator as claimed in claim 3, it is characterized in that: described hanging structure (18) is extended by the opposite side of a side direction substrate (7) of substrate (7) on Width, and the width of hanging structure (18) is less than the width of substrate (7); Described hanging structure (18) is extended by the lower surface of the upper surface basad (7) of substrate (7) in short transverse, and the height of hanging structure (18) is less than the height of substrate (7).
5. multrirange MEMS CMOS static broach resonator as claimed in claim 1, is characterized in that: described upper anchor point (1-1), anchorage (1-2), left anchor point (6-1) and right anchor point (6-2) comprise depressed part (19) and protuberance (20); The structure of described protuberance (20) is upwards followed successively by first medium layer (8), the first metallic aluminium figure layer (9), second medium layer (10), the second metallic aluminium figure layer (12), the 3rd dielectric layer (13), the 3rd metallic aluminium figure layer (15) and passivation layer (16) from bottom, the first metallic aluminium figure layer (9) is connected by the first tungsten plug (11) being arranged in second medium layer (10) with the second metallic aluminium figure layer (12), and the second metallic aluminium figure layer (12) is connected by the second tungsten plug (14) being arranged in the 3rd dielectric layer (13) with the 3rd metallic aluminium figure layer (15); The structure of described depressed part (19) is upwards followed successively by first medium layer (8), the first metallic aluminium figure layer (9), second medium layer (10), the second metallic aluminium figure layer (12) and the 3rd dielectric layer (13) from bottom, and the first metallic aluminium figure layer (9) is connected by the first tungsten plug (11) being arranged in second medium layer (10) with the second metallic aluminium figure layer (12).
6. multrirange MEMS CMOS static broach resonator as claimed in claim 3, it is characterized in that: described the first resonator element (100), the second resonator element (200), the 3rd resonator element (300), the 4th resonator element (400), the output of the 5th resonator element (500) and sixth resonator unit (600) is drawn by the 3rd metallic aluminium figure layer (15), the first resonator element (100), the second resonator element (200), the 3rd resonator element (300), the 4th resonator element (400), the input of the 5th resonator element (500) and sixth resonator unit (600) is introduced by the second metallic aluminium figure layer (12).
7. multrirange MEMS CMOS static broach resonator as claimed in claim 1, it is characterized in that: the middle part in described left part mass (4-1) left side arranges to the recessed left part cell body (4-11) in left part mass (4-1) inner side, and the middle part on right part mass (4-2) right side arranges to the recessed right part cell body (4-21) in right part mass (4-2) inner side.
8. multrirange MEMS CMOS static broach resonator as claimed in claim 1, is characterized in that: described left anchor point (6-1) and right anchor point (6-2) are all rectangular bulk, and upper anchor point (1-1) and anchorage (1-2) are square shape.
9. multrirange MEMS CMOS static broach resonator as claimed in claim 1, is characterized in that: described substrate (7) is silicon base.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110573835A (en) * | 2017-04-27 | 2019-12-13 | 赛峰集团 | Resonator configured to be incorporated into an inertial angle sensor |
| CN114354024A (en) * | 2022-03-17 | 2022-04-15 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122611A (en) * | 2006-08-09 | 2008-02-13 | 日立金属株式会社 | Multi-range three-axis acceleration sensor device |
| CN102798498A (en) * | 2012-08-23 | 2012-11-28 | 沈阳工业大学 | Multi-range integrated pressure sensor chip |
| CN103312291A (en) * | 2013-06-19 | 2013-09-18 | 江苏物联网研究发展中心 | Electrostatic comb resonator |
-
2013
- 2013-12-11 CN CN201310676737.0A patent/CN103647521A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101122611A (en) * | 2006-08-09 | 2008-02-13 | 日立金属株式会社 | Multi-range three-axis acceleration sensor device |
| CN102798498A (en) * | 2012-08-23 | 2012-11-28 | 沈阳工业大学 | Multi-range integrated pressure sensor chip |
| CN103312291A (en) * | 2013-06-19 | 2013-09-18 | 江苏物联网研究发展中心 | Electrostatic comb resonator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110573835A (en) * | 2017-04-27 | 2019-12-13 | 赛峰集团 | Resonator configured to be incorporated into an inertial angle sensor |
| CN114354024A (en) * | 2022-03-17 | 2022-04-15 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
| CN114354024B (en) * | 2022-03-17 | 2022-06-07 | 成都凯天电子股份有限公司 | High-sensitivity modal coupling type silicon resonance pressure sensor and pressure calculation method thereof |
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Application publication date: 20140319 |