CN102779911A - 一种垂直结构氮化镓基发光元件的制作方法 - Google Patents
一种垂直结构氮化镓基发光元件的制作方法 Download PDFInfo
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- CN102779911A CN102779911A CN2012101008533A CN201210100853A CN102779911A CN 102779911 A CN102779911 A CN 102779911A CN 2012101008533 A CN2012101008533 A CN 2012101008533A CN 201210100853 A CN201210100853 A CN 201210100853A CN 102779911 A CN102779911 A CN 102779911A
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- light emitting
- epitaxial loayer
- gallium nitride
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- emitting element
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000005520 cutting process Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 46
- 229910002601 GaN Inorganic materials 0.000 claims description 45
- 238000009413 insulation Methods 0.000 claims description 32
- 238000013517 stratification Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000005468 ion implantation Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000004224 protection Effects 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000007788 roughening Methods 0.000 claims description 2
- 238000004020 luminiscence type Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 9
- 239000007924 injection Substances 0.000 abstract description 9
- 239000008187 granular material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 43
- 238000005516 engineering process Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000005566 electron beam evaporation Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229940044658 gallium nitrate Drugs 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (9)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN2012101008533A CN102779911A (zh) | 2012-04-09 | 2012-04-09 | 一种垂直结构氮化镓基发光元件的制作方法 |
PCT/CN2013/072855 WO2013152657A1 (zh) | 2012-04-09 | 2013-03-19 | 一种垂直结构氮化镓基发光元件的制作方法 |
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CN2012101008533A CN102779911A (zh) | 2012-04-09 | 2012-04-09 | 一种垂直结构氮化镓基发光元件的制作方法 |
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CN2012101008533A Pending CN102779911A (zh) | 2012-04-09 | 2012-04-09 | 一种垂直结构氮化镓基发光元件的制作方法 |
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CN (1) | CN102779911A (zh) |
WO (1) | WO2013152657A1 (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013152657A1 (zh) * | 2012-04-09 | 2013-10-17 | 厦门市三安光电科技有限公司 | 一种垂直结构氮化镓基发光元件的制作方法 |
CN105489717A (zh) * | 2016-01-11 | 2016-04-13 | 西安交通大学 | 一种垂直结构led芯片的制备工艺 |
CN106024825A (zh) * | 2016-06-30 | 2016-10-12 | 上海君万微电子科技有限公司 | 基于氮化物led阵列的无间隙微显示器 |
CN106486575A (zh) * | 2016-10-31 | 2017-03-08 | 厦门市三安光电科技有限公司 | 一种薄膜发光二极管芯片及其制作方法 |
CN112242458A (zh) * | 2019-07-18 | 2021-01-19 | 山东浪潮华光光电子股份有限公司 | 一种改善反极性AlGaInP LED芯片切割质量的方法 |
CN116544322A (zh) * | 2023-07-06 | 2023-08-04 | 江西兆驰半导体有限公司 | 一种GaAs基LED芯片、制备方法及LED |
Families Citing this family (4)
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CN108172591A (zh) * | 2018-01-05 | 2018-06-15 | 广东迅扬科技股份有限公司 | 一种Micro LED彩色显示阵列结构 |
TW202329250A (zh) * | 2021-11-02 | 2023-07-16 | 美商納諾西斯有限公司 | 具有非活性植入式隔離區的發光二極體陣列及其形成方法 |
CN115394897B (zh) * | 2022-10-28 | 2023-02-28 | 南昌凯捷半导体科技有限公司 | 一种红光Micro-LED芯片及其制作方法 |
CN117438515B (zh) * | 2023-12-21 | 2024-03-29 | 江西乾照半导体科技有限公司 | 一种led芯片粗化方法及led芯片 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
CN101604717A (zh) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | 一种垂直GaN基LED芯片及其制作方法 |
CN101728471A (zh) * | 2008-10-27 | 2010-06-09 | Lg伊诺特有限公司 | 半导体发光器件 |
CN102315353A (zh) * | 2011-09-30 | 2012-01-11 | 厦门市三安光电科技有限公司 | 一种倒装集成发光二极管及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102779911A (zh) * | 2012-04-09 | 2012-11-14 | 厦门市三安光电科技有限公司 | 一种垂直结构氮化镓基发光元件的制作方法 |
-
2012
- 2012-04-09 CN CN2012101008533A patent/CN102779911A/zh active Pending
-
2013
- 2013-03-19 WO PCT/CN2013/072855 patent/WO2013152657A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
CN101728471A (zh) * | 2008-10-27 | 2010-06-09 | Lg伊诺特有限公司 | 半导体发光器件 |
CN101604717A (zh) * | 2009-07-15 | 2009-12-16 | 山东华光光电子有限公司 | 一种垂直GaN基LED芯片及其制作方法 |
CN102315353A (zh) * | 2011-09-30 | 2012-01-11 | 厦门市三安光电科技有限公司 | 一种倒装集成发光二极管及其制备方法 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013152657A1 (zh) * | 2012-04-09 | 2013-10-17 | 厦门市三安光电科技有限公司 | 一种垂直结构氮化镓基发光元件的制作方法 |
CN105489717A (zh) * | 2016-01-11 | 2016-04-13 | 西安交通大学 | 一种垂直结构led芯片的制备工艺 |
CN106024825A (zh) * | 2016-06-30 | 2016-10-12 | 上海君万微电子科技有限公司 | 基于氮化物led阵列的无间隙微显示器 |
CN106486575A (zh) * | 2016-10-31 | 2017-03-08 | 厦门市三安光电科技有限公司 | 一种薄膜发光二极管芯片及其制作方法 |
WO2018076901A1 (zh) * | 2016-10-31 | 2018-05-03 | 厦门三安光电有限公司 | 一种薄膜发光二极管芯片及其制作方法 |
CN112242458A (zh) * | 2019-07-18 | 2021-01-19 | 山东浪潮华光光电子股份有限公司 | 一种改善反极性AlGaInP LED芯片切割质量的方法 |
CN112242458B (zh) * | 2019-07-18 | 2022-02-08 | 山东浪潮华光光电子股份有限公司 | 一种改善反极性AlGaInP LED芯片切割质量的方法 |
CN116544322A (zh) * | 2023-07-06 | 2023-08-04 | 江西兆驰半导体有限公司 | 一种GaAs基LED芯片、制备方法及LED |
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