CN102067341B - 发光器件和用于制造发光器件的方法 - Google Patents
发光器件和用于制造发光器件的方法 Download PDFInfo
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- CN102067341B CN102067341B CN2009801189944A CN200980118994A CN102067341B CN 102067341 B CN102067341 B CN 102067341B CN 2009801189944 A CN2009801189944 A CN 2009801189944A CN 200980118994 A CN200980118994 A CN 200980118994A CN 102067341 B CN102067341 B CN 102067341B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
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- 238000000034 method Methods 0.000 claims abstract description 31
- 238000005516 engineering process Methods 0.000 claims description 48
- 239000011230 binding agent Substances 0.000 claims description 30
- 238000002161 passivation Methods 0.000 claims description 16
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- 238000010276 construction Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 150000004767 nitrides Chemical class 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
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- 238000000926 separation method Methods 0.000 description 5
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000006104 solid solution Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- -1 AlInN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
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- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- 238000005498 polishing Methods 0.000 description 2
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- 229910004541 SiN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
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- 229910052721 tungsten Inorganic materials 0.000 description 1
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0030106 | 2008-04-01 | ||
KR1020080030106A KR101438818B1 (ko) | 2008-04-01 | 2008-04-01 | 발광다이오드 소자 |
PCT/KR2009/001679 WO2009145465A2 (ko) | 2008-04-01 | 2009-04-01 | 발광 소자 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
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CN102067341A CN102067341A (zh) | 2011-05-18 |
CN102067341B true CN102067341B (zh) | 2013-09-25 |
Family
ID=41377717
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801189944A Active CN102067341B (zh) | 2008-04-01 | 2009-04-01 | 发光器件和用于制造发光器件的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US8791481B2 (zh) |
EP (1) | EP2262011B1 (zh) |
JP (1) | JP2011517085A (zh) |
KR (1) | KR101438818B1 (zh) |
CN (1) | CN102067341B (zh) |
WO (1) | WO2009145465A2 (zh) |
Families Citing this family (39)
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US8999736B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic system |
KR100975659B1 (ko) * | 2007-12-18 | 2010-08-17 | 포항공과대학교 산학협력단 | 발광 소자 및 그 제조 방법 |
KR101470020B1 (ko) | 2008-03-18 | 2014-12-10 | 엘지이노텍 주식회사 | 샌드위치 구조의 웨이퍼 결합 및 포톤 빔을 이용한 단결정 반도체 박막 전이 |
KR20100008123A (ko) | 2008-07-15 | 2010-01-25 | 고려대학교 산학협력단 | 이중 히트 씽크층으로 구성된 지지대를 갖춘 고성능수직구조의 반도체 발광소자 |
KR100999726B1 (ko) | 2009-05-04 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR101072034B1 (ko) * | 2009-10-15 | 2011-10-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101014013B1 (ko) | 2009-10-15 | 2011-02-10 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR101081193B1 (ko) | 2009-10-15 | 2011-11-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
EP2333852B1 (en) | 2009-12-09 | 2019-03-27 | LG Innotek Co., Ltd. | Light emitting device and light emitting package |
KR101181000B1 (ko) * | 2009-12-29 | 2012-09-07 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR101039904B1 (ko) | 2010-01-15 | 2011-06-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
KR20110085609A (ko) | 2010-01-21 | 2011-07-27 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법 |
KR100999779B1 (ko) | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
KR100986523B1 (ko) | 2010-02-08 | 2010-10-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100986318B1 (ko) | 2010-02-09 | 2010-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100999798B1 (ko) | 2010-02-11 | 2010-12-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
KR100969127B1 (ko) * | 2010-02-18 | 2010-07-09 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR101643410B1 (ko) * | 2010-03-08 | 2016-07-28 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
JP5725927B2 (ja) * | 2010-05-18 | 2015-05-27 | ソウル バイオシス カンパニー リミテッドSeoul Viosys Co.,Ltd. | 高効率発光ダイオード及びその製造方法 |
KR101115537B1 (ko) * | 2010-05-18 | 2012-02-29 | 서울옵토디바이스주식회사 | 고효율 반도체 발광소자 |
KR101114191B1 (ko) | 2010-09-17 | 2012-03-13 | 엘지이노텍 주식회사 | 발광소자 |
KR101707118B1 (ko) * | 2010-10-19 | 2017-02-15 | 엘지이노텍 주식회사 | 발광소자 및 그 발광 소자의 제조 방법 |
KR101591991B1 (ko) | 2010-12-02 | 2016-02-05 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조 방법 |
KR101781438B1 (ko) * | 2011-06-14 | 2017-09-25 | 삼성전자주식회사 | 반도체 발광소자의 제조방법 |
US9312437B2 (en) * | 2011-11-07 | 2016-04-12 | Koninklijke Philips N.V. | P-contact with more uniform injection and lower optical loss |
JP5139576B1 (ja) * | 2011-12-09 | 2013-02-06 | 株式会社東芝 | 半導体発光素子の製造方法 |
KR101286211B1 (ko) * | 2012-02-16 | 2013-07-15 | 고려대학교 산학협력단 | 발광 소자 제조 방법 및 이를 이용하여 제조된 발광 소자 |
JP6068091B2 (ja) * | 2012-10-24 | 2017-01-25 | スタンレー電気株式会社 | 発光素子 |
TWI604632B (zh) * | 2013-04-25 | 2017-11-01 | 晶元光電股份有限公司 | 發光二極體裝置 |
KR102142716B1 (ko) * | 2014-03-13 | 2020-08-07 | 엘지이노텍 주식회사 | 발광소자 |
WO2016165983A1 (en) * | 2015-04-15 | 2016-10-20 | Koninklijke Philips N.V. | Light emitting device with reflector and a top contact |
GB201509766D0 (en) * | 2015-06-05 | 2015-07-22 | Element Six Technologies Ltd | Method of fabricating diamond-semiconductor composite substrates |
TWI565098B (zh) * | 2015-06-10 | 2017-01-01 | 隆達電子股份有限公司 | 發光元件 |
US9837792B2 (en) * | 2016-03-07 | 2017-12-05 | Epistar Corporation | Light-emitting device |
KR101928312B1 (ko) * | 2017-03-03 | 2019-03-12 | 주식회사 세미콘라이트 | 반도체 발광소자 |
CN108198926A (zh) * | 2018-01-31 | 2018-06-22 | 南昌大学 | 一种薄膜型AlGaInP发光二极管芯片及其制备方法 |
US11011677B2 (en) | 2018-03-09 | 2021-05-18 | Innolux Corporation | Display device |
CN115498088B (zh) * | 2022-11-16 | 2023-01-31 | 镭昱光电科技(苏州)有限公司 | 微型发光二极管及制备方法 |
FR3143850A1 (fr) * | 2022-12-19 | 2024-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de réalisation d’un dispositif électronique |
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2008
- 2008-04-01 KR KR1020080030106A patent/KR101438818B1/ko active IP Right Grant
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2009
- 2009-04-01 CN CN2009801189944A patent/CN102067341B/zh active Active
- 2009-04-01 US US12/936,071 patent/US8791481B2/en active Active
- 2009-04-01 WO PCT/KR2009/001679 patent/WO2009145465A2/ko active Application Filing
- 2009-04-01 JP JP2011502855A patent/JP2011517085A/ja active Pending
- 2009-04-01 EP EP09754930.7A patent/EP2262011B1/en active Active
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2014
- 2014-06-23 US US14/312,495 patent/US9735327B2/en active Active
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JP2003162231A (ja) * | 2001-11-26 | 2003-06-06 | Sony Corp | 素子の製造方法、素子の配列方法及び画像表示装置の製造方法 |
WO2006116030A3 (en) * | 2005-04-21 | 2009-04-23 | Aonex Technologies Inc | Bonded intermediate substrate and method of making same |
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EP2262011A2 (en) | 2010-12-15 |
EP2262011A4 (en) | 2014-01-22 |
US8791481B2 (en) | 2014-07-29 |
CN102067341A (zh) | 2011-05-18 |
KR20090104931A (ko) | 2009-10-07 |
US20110168971A1 (en) | 2011-07-14 |
EP2262011B1 (en) | 2019-06-19 |
WO2009145465A3 (ko) | 2010-01-21 |
US20140306254A1 (en) | 2014-10-16 |
JP2011517085A (ja) | 2011-05-26 |
WO2009145465A2 (ko) | 2009-12-03 |
US9735327B2 (en) | 2017-08-15 |
KR101438818B1 (ko) | 2014-09-05 |
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