CN102739164A - Noise filtering circuit and integrated circuit - Google Patents
Noise filtering circuit and integrated circuit Download PDFInfo
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- CN102739164A CN102739164A CN2011100975440A CN201110097544A CN102739164A CN 102739164 A CN102739164 A CN 102739164A CN 2011100975440 A CN2011100975440 A CN 2011100975440A CN 201110097544 A CN201110097544 A CN 201110097544A CN 102739164 A CN102739164 A CN 102739164A
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Abstract
The invention provides a noise filtering circuit and an integrated circuit. The noise filtering circuit is suitable to be used in the integrated circuit. A decoupling unit is coupled with a power joint sheet of the integrated circuit, used to deal with a transient voltage of the power joint sheet on the integrated circuit and to generate a first current. A current amplification circuit is coupled with the decoupling unit and the power joint sheet of the integrated circuit, and is used to draw a second current from the power joint sheet of the integrated circuit based on the first current..
Description
Technical field
The invention relates to (on-chip) noise filtering circuit in a kind of chip, and be particularly to and carry out uncoupled a kind of noise filtering circuit to the online transient voltage of the power supply that is positioned at integrated circuit.
Background technology
As far as integrated circuit, (electrostatic discharge, ESD) incident is important reliability issues to static discharge.In order to meet the reliability of component level (component-level); The interior ESD protection circuit of chip is set at complementary metal oxide semiconductors (CMOS), and (complementary metal oxide semiconductor is CMOS) in the input-output unit of integrated circuit (I/O cell) and the power supply/ground unit.Product as far as complementary mos integrated circuit; Except the electrostatic discharge problem of component level; The electrostatic discharge problem of system-level (system-level) also becomes important reliability issues gradually; Therefore need rigorous reliability test standard requirement, for example Electro Magnetic Compatibility (electromagnetic compatibility, EMC) the system-level electrostatic discharge testing of rules.Generally speaking; Electronic product must can bear down in contact discharge (contact-discharge) test+the static discharge position of 8kV is accurate and under atmospherical discharges (air-discharge) test, can bear+the static discharge position of 15kV certainly so that meet the tolerance requirement of level 4.Yet high-octane static discharge can produce noise, therefore will cause complementary mos integrated circuit generation infringement or fault in the electronic product.Moreover; Even complementary mos integrated circuit is through the static discharge specification of component level; For example have ± the human body electro static discharge pattern of 2kV (human body model, HBM), ± (Machine Model is MM) with assembly discharge mode (the Charged Device Model of ± 1kV for the machine discharge mode of 200V; CDM), the complementary mos integrated circuit of part still can be easy to receive system-level static discharge power influence.
As far as the checking of the static discharge of comprehensive component level, can use pin that pin (pin-to-pin) static discharge power and power supply are come the static discharge reliability of the chip of integrated circuit is verified to two kinds of electrostatic discharge testings of ground connection (VDD-to-VSS) static discharge power by carrying out.Above-mentioned two kinds of electrostatic discharge testings usually can cause the interior inside/core circuit of chip of integrated circuit to have infringement to take place, and for example the static discharge current of expectation can be via in input and output (I/O) pin and the power line inflow inside/core circuit for part.Therefore, in the electrostatic discharge (ESD) protection of entire chip, the noise filtering circuit that is coupled between power line and the earth connection is necessary.When input (or output) pin over against ground connection (positive-to-VSS; PS) pattern or negative to power supply (negative-to-VDD; When ND) pattern is subjected to static discharge power; The noise filtering circuit can further provide low impedance path between power line and earth connection, so that can be effectively the electric current of static discharge be discharged.
Static discharge specification for the compliance with system level; Some method is provided to integrate a plurality of discrete noise de (decouple) assemblies or plate level (board-level) noise filter to the product of the integrated circuit of complementary metal oxide semiconductors (CMOS), so that under system-level electrostatic discharge testing, can carry out de, bypass (bypass) or absorption to electronics transition (transient) voltage (energy).Can use the noise filtering circuit to increase system-level static discharge tolerance; For example capacitive filter, magnetic bead (Ferrite Bead), TVS (transient voltage suppressor; TVS), electric capacity-inductance filter (LC-Like) and pi filter, such as Figure 1A-Fig. 1 D demonstration.In Figure 1A-Fig. 1 D, noise filtering circuit 100A-100D is made up of with different structure resistance R and decoupling capacitance C.
Through selecting suitable noise filtering circuit, the integrated circuit of complementary metal oxide semiconductors (CMOS) can be under system-level electrostatic discharge testing the static discharge tolerance of elevator system level widely.Traditionally, the discrete noise bypass module that in the noise filtering circuit, has large tracts of land/size can provide preferable system-level static discharge tolerance.Yet because restriction, the demand of crystallite dimension and considering of complete cost on the processing procedure, the discrete component of large tracts of land/size is difficult to be integrated in the one chip.
Therefore, for the static discharge specification of compliance with system level, need have powerful transition and disturb bypass capability and do not need large-area chip noise filtering circuit.
Summary of the invention
The object of the present invention is to provide a kind of noise filtering circuit and integrated circuit.
The present invention provides a kind of noise filtering circuit, is applicable to an integrated circuit.Above-mentioned noise filtering circuit comprises: a de unit, be coupled to a power supply joint sheet of said integrated circuit, and in order to a transient voltage, and produce one first electric current corresponding to the above-mentioned power supply joint sheet that is positioned at said integrated circuit; And a current amplification circuit, be coupled to the above-mentioned power supply joint sheet of above-mentioned de unit and said integrated circuit, in order to according to above-mentioned first electric current, draw out one second electric current from the above-mentioned power supply joint sheet of said integrated circuit.
Moreover the present invention provides a kind of integrated circuit, comprising: a power supply joint sheet; One core circuit; One noise filtering circuit is coupled between above-mentioned power supply joint sheet and the above-mentioned core circuit, comprising: a de unit, be coupled to above-mentioned power supply joint sheet, and in order to a transient voltage, and produce one first electric current corresponding to above-mentioned power supply joint sheet; And a current amplification circuit, be coupled to above-mentioned de unit and above-mentioned power supply joint sheet, in order to according to above-mentioned first electric current, draw out one second electric current from above-mentioned power supply joint sheet.
The described noise filtering circuit of the embodiment of the invention can provide low-impedance path between power supply joint sheet VDD and ground connection joint sheet VSS, so that can be effectively under the situation that is subjected to static discharge power the electric current of static discharge be discharged.Therefore, successfully de or bypass electronics transition fast under system-level static discharge power, and under the situation of increased area not, can improve the tolerance that the product of complementary mos integrated circuit disturbs the electronics transition.
Description of drawings
Figure 1A-Fig. 1 D shows traditional noise filtering circuit respectively;
Fig. 2 shows according to the described integrated circuit of one embodiment of the invention;
Fig. 3 shows according to the described noise filtering circuit of one embodiment of the invention;
Fig. 4 shows to see through to use underdamped string wave voltage source to come the sketch map of simulation drawing 3 under system-level static discharge transition; And
Fig. 5 A-Fig. 5 D shows described according to other embodiments of the present invention noise filtering circuit respectively.
[primary clustering symbol description]
200～integrated circuit;
100A-100D, 210,500A-500D～noise filtering circuit;
220,310,510A-510D～de unit;
230,320,520～current amplification circuit;
240～core circuit;
250,260～power line;
C, C
Decouple～electric capacity;
C
D1-C
DN～junction capacitance;
CM～MOS capacitor;
D1-DN～diode;
M1, M2～transistor;
R, RR, R1, R2～resistance;
VDD～power supply joint sheet;
VSS～ground connection joint sheet; And
I1, I2～electric current.
Embodiment
For letting above and other objects of the present invention, characteristic and the advantage can be more obviously understandable, the hereinafter spy enumerates preferred embodiment, and cooperates appended accompanying drawing, elaborates as follows:
Embodiment:
Fig. 2 shows according to the described integrated circuit 200 of one embodiment of the invention.Integrated circuit 200 comprises power supply joint sheet (PAD) VDD, ground connection joint sheet VSS, noise filtering circuit 210 and core circuit 240, and wherein noise filtering circuit 210 and core circuit 240 are connected in power supply joint sheet VDD and ground connection joint sheet VSS via power line 250 and 260 respectively.In circuit layout, power supply joint sheet VDD and ground connection joint sheet VSS be arranged on integrated circuit 200 around, and noise filtering circuit 210 is arranged between power supply joint sheet VDD, ground connection joint sheet VSS and the core circuit 240.Noise filtering circuit 210 comprises de unit 220 and current amplification circuit 230, and wherein de unit 220 is to be coupled between current amplification circuit 230 and the power supply joint sheet VDD.In this embodiment, de unit 220 can be used under the system-level electrostatic discharge testing or under the transition disturbed test condition electronics transient voltage that is positioned on the power supply joint sheet VDD is being carried out de, bypass or absorption.Particularly, de unit 220 can be used as decoupling capacitance.Current amplification circuit 230 is used for increasing the magnitude of current of discharging current I1 and I2 between power line 250 and 260.When discharging current I1 and I2 increase, the equivalent capacitance value of de unit 220 is to increase with the multiple mode.
Fig. 3 shows according to the described noise filtering circuit 300 of one embodiment of the invention.In noise filtering circuit 300, de unit 310 comprises metal-oxide semiconductor (MOS) (metal oxide semiconductor, MOS) capacitor C M, and current amplification circuit 320 comprises the current mirror of being made up of two transistor M1 and M2 and resistance R R.In Fig. 3, corresponding to the electric current I 1 from MOS capacitor CM, current amplification circuit 320 can draw out electric current I 2 from power supply joint sheet VDD via power line 250.Therefore, in case there is transient voltage (energy) to occur on power supply joint sheet VDD and the power line 250, de unit 310 can produce electric current I 1 to current amplification circuit 320, and electric current I 2 will be drawn out by current amplification circuit 320 then.So current amplification circuit 320 just can be located electric current I 1 and I2 shunting (shunt) to ground connection via power line 260 and ground connection joint sheet VSS.For instance; If transistor M2 is that the capacitance of 4 (M2/M1=4) and MOS capacitor CM is 2-pF to the element width ratio of transistor M1; The electric current that then flow to ground connection joint sheet VSS from power line 250 can become 5 (4+1) doubly, i.e. I1+I2=5 * I1.Therefore, noise filtering circuit 300 can provide the electric capacity (electric capacity of 2-pF is multiplied by 5 times) that is equivalent to 10-pF that the electronics transient voltage (energy) that is positioned on power supply joint sheet VDD and the power line 250 is carried out de, bypass or absorption.
Fig. 4 shows to see through to use the string wave voltage source of underdamping (underdamp) to come the sketch map of simulation drawing 3 under system-level static discharge transition that wherein waveform VDDA and VDDB are left-hand end and the resulting waveforms of representing respectively by resistance R 1 of right-hand end.Such as Fig. 4 demonstration, when simulating that the caused interference of static discharge is applied to that power supply joint sheet VDD goes up and during with ground connection joint sheet VSS ground connection, the transient voltage on the waveform VDDB can reduce soon.
Fig. 5 A shows according to the described noise filtering circuit of another embodiment of the present invention 500A.Likewise, noise filtering circuit 500A comprises de unit 510A and current amplification circuit 520.Except capacitor C
DecoupleOutside, de unit 510A also comprises a forward bias voltage drop diode string, and wherein forward bias voltage drop diode string is to be made up of a plurality of diode D1-DN, and wherein diode D1-DN is with by capacitor C
DecoupleTo the forward conducting direction of current amplification circuit 520 and electrically connect.In this embodiment, diode D1-DN is used on the power supply joint sheet VDD or the static discharge between power line 250 and 260 overload voltage limits.In another embodiment, the forward bias voltage drop diode string that is made up of diode D1-DN can be connected in power supply joint sheet VDD and capacitor C
DecoupleBetween.Through connecting forward bias voltage drop diode string to capacitor C
Decouple, de unit 510A can be also according to diode junction (junction) capacitor C
D1-C
DNEquivalent solution coupling capacitance is provided, with bypass transition interfering energy.In other words, as far as de unit 510A, capacitor C
DecoupleAnd diode junction capacitor C
D1-C
DNCan form decoupling capacitance.So current amplification circuit 520 just can provide discharging current I1 and I2 between power line 250 and 260, and applying the equivalence value that increases decoupling capacitance under the condition of static discharge.
Fig. 5 B shows according to the described noise filtering circuit of another embodiment of the present invention 500B.Compared to the de unit 510A of Fig. 5 A, de unit 510B comprises a reverse-biased diode string, and wherein the reverse-biased diode string is to be made up of diode D1-DN, and wherein diode D1-DN is with by capacitor C
DecoupleTo the reverse-conducting direction of current amplification circuit 520 and electrically connect.In addition, the reverse-biased diode string can be connected between power supply joint sheet VDD and the capacitor C Decouple.Likewise, according to diode junction capacitor C D1-CDN, de unit 510B can provide equivalent solution coupling capacitance to come bypass transition interfering energy.Moreover, through suitably increasing the electric current magnification ratio of current amplification circuit 520, can be with capacitor C
DecoupleFrom de unit 510A and 510B, remove, such as Fig. 5 C and Fig. 5 D demonstration, therefore can reduce the size of noise filtering circuit 500C and 500D.
Like previous description; The described noise filtering circuit of the embodiment of the invention can provide low-impedance path between power supply joint sheet VDD and ground connection joint sheet VSS, so that can be effectively under the situation that is subjected to static discharge power the electric current of static discharge be discharged.Therefore, successfully de or bypass electronics transition fast under system-level static discharge power, and under the situation of increased area not, can improve the tolerance that the product of complementary mos integrated circuit disturbs the electronics transition.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when the ranges that look appending claims institute circle.
Claims (16)
1. a noise filtering circuit is characterized in that, is applicable to an integrated circuit, comprising:
One de unit is coupled to a power supply joint sheet of said integrated circuit, in order to the transient voltage corresponding to the above-mentioned power supply joint sheet that is positioned at said integrated circuit, and produces one first electric current; And
One current amplification circuit is coupled to the above-mentioned power supply joint sheet of above-mentioned de unit and said integrated circuit, in order to according to above-mentioned first electric current, draws out one second electric current from the above-mentioned power supply joint sheet of said integrated circuit.
2. noise filtering circuit according to claim 1; It is characterized in that; In an electrostatic discharge event; Corresponding to the above-mentioned transient voltage of the above-mentioned power supply joint sheet that is positioned at said integrated circuit, above-mentioned current amplification circuit amplifies above-mentioned first electric current obtaining above-mentioned second electric current, and above-mentioned first electric current and above-mentioned second electric current are branched to an earth terminal.
3. noise filtering circuit according to claim 1 is characterized in that above-mentioned current amplification circuit comprises a current mirror, and above-mentioned second electric current multiple that is above-mentioned first electric current.
4. noise filtering circuit according to claim 1 is characterized in that, above-mentioned de unit comprises an electric capacity, is coupled between the above-mentioned power supply joint sheet and above-mentioned current amplification circuit of said integrated circuit.
5. noise filtering circuit according to claim 4; It is characterized in that; Above-mentioned de unit also comprises at least one diode; Wherein above-mentioned diode is to connect from the above-mentioned power supply joint sheet of said integrated circuit to above-mentioned electric capacity or from the forward conducting direction of above-mentioned electric capacity to above-mentioned current amplification circuit; One junction capacitance of wherein above-mentioned electric capacity and above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of the above-mentioned power supply joint sheet of said integrated circuit in order to de.
6. noise filtering circuit according to claim 4; It is characterized in that; Above-mentioned de unit also comprises at least one diode; Wherein above-mentioned diode is to connect from the above-mentioned power supply joint sheet of said integrated circuit to above-mentioned electric capacity or from the reverse-conducting direction of above-mentioned electric capacity to above-mentioned current amplification circuit; One junction capacitance of wherein above-mentioned electric capacity and above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of the above-mentioned power supply joint sheet of said integrated circuit in order to de.
7. noise filtering circuit according to claim 1; It is characterized in that; Above-mentioned de unit comprises at least one diode; Wherein above-mentioned diode is to connect to the forward conducting direction to above-mentioned current amplification circuit with the above-mentioned power supply joint sheet from said integrated circuit, and wherein a junction capacitance of above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of the above-mentioned power supply joint sheet of said integrated circuit in order to de.
8. noise filtering circuit according to claim 1; It is characterized in that; Above-mentioned de unit comprises at least one diode; Wherein above-mentioned diode is to connect to the reverse-conducting direction to above-mentioned current amplification circuit with the above-mentioned power supply joint sheet from said integrated circuit, and wherein a junction capacitance of above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of the above-mentioned power supply joint sheet of said integrated circuit in order to de.
9. an integrated circuit is characterized in that, comprising:
One power supply joint sheet;
One core circuit;
One noise filtering circuit is coupled between above-mentioned power supply joint sheet and the above-mentioned core circuit, comprising:
One de unit is coupled to above-mentioned power supply joint sheet, in order to the transient voltage corresponding to above-mentioned power supply joint sheet, and produces one first electric current; And
One current amplification circuit is coupled to above-mentioned de unit and above-mentioned power supply joint sheet, in order to according to above-mentioned first electric current, draws out one second electric current from above-mentioned power supply joint sheet.
10. integrated circuit according to claim 9; It is characterized in that; In an electrostatic discharge event; Corresponding to the above-mentioned transient voltage that is positioned at above-mentioned power supply joint sheet, above-mentioned current amplification circuit amplifies above-mentioned first electric current obtaining above-mentioned second electric current, and above-mentioned first electric current and above-mentioned second electric current are branched to an earth terminal.
11. integrated circuit according to claim 9 is characterized in that, above-mentioned current amplification circuit comprises a current mirror, and above-mentioned second electric current multiple that is above-mentioned first electric current.
12. integrated circuit according to claim 9 is characterized in that, above-mentioned de unit comprises an electric capacity, is coupled between above-mentioned power supply joint sheet and the above-mentioned current amplification circuit.
13. integrated circuit according to claim 12; It is characterized in that; Above-mentioned de unit also comprises at least one diode; Wherein above-mentioned diode is connecting from above-mentioned power supply joint sheet to above-mentioned electric capacity or from above-mentioned electric capacity to the forward conducting direction of above-mentioned current amplification circuit, and a junction capacitance of wherein above-mentioned electric capacity and above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of above-mentioned power supply joint sheet in order to de.
14. integrated circuit according to claim 12; It is characterized in that; Above-mentioned de unit also comprises at least one diode; Wherein above-mentioned diode is connecting from above-mentioned power supply joint sheet to above-mentioned electric capacity or from above-mentioned electric capacity to the reverse-conducting direction of above-mentioned current amplification circuit, and a junction capacitance of wherein above-mentioned electric capacity and above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of above-mentioned power supply joint sheet in order to de.
15. integrated circuit according to claim 9; It is characterized in that; Above-mentioned de unit comprises at least one diode; Wherein above-mentioned diode is to connect with the forward conducting direction from above-mentioned power supply joint sheet to above-mentioned current amplification circuit, and wherein a junction capacitance of above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of above-mentioned power supply joint sheet in order to de.
16. integrated circuit according to claim 9; It is characterized in that; Above-mentioned de unit comprises at least one diode; Wherein above-mentioned diode is to connect with the reverse-conducting direction from above-mentioned power supply joint sheet to above-mentioned current amplification circuit, and wherein a junction capacitance of above-mentioned diode forms a decoupling capacitance, is positioned at the above-mentioned transient voltage of above-mentioned power supply joint sheet in order to de.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100975440A CN102739164A (en) | 2011-04-15 | 2011-04-15 | Noise filtering circuit and integrated circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100975440A CN102739164A (en) | 2011-04-15 | 2011-04-15 | Noise filtering circuit and integrated circuit |
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| CN102739164A true CN102739164A (en) | 2012-10-17 |
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| CN2011100975440A Pending CN102739164A (en) | 2011-04-15 | 2011-04-15 | Noise filtering circuit and integrated circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104980120A (en) * | 2014-04-14 | 2015-10-14 | 矢崎总业株式会社 | Noise filter and wire harness assembly including the same |
| KR20190041915A (en) * | 2017-10-13 | 2019-04-23 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Circuit, system and method for electrostatic discharge (esd) protection |
| CN110943707A (en) * | 2019-12-19 | 2020-03-31 | Tcl华星光电技术有限公司 | Filter circuit and electronic device |
| DE102018124676B4 (en) | 2017-10-13 | 2023-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit, system and method for electrostatic discharge protection (ESD protection) |
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| CN104980120A (en) * | 2014-04-14 | 2015-10-14 | 矢崎总业株式会社 | Noise filter and wire harness assembly including the same |
| KR20190041915A (en) * | 2017-10-13 | 2019-04-23 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Circuit, system and method for electrostatic discharge (esd) protection |
| KR102195676B1 (en) * | 2017-10-13 | 2020-12-29 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | Circuit, system and method for electrostatic discharge (esd) protection |
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Application publication date: 20121017 |