CN102709386A - Method for preparing full back electrode solar battery - Google Patents
Method for preparing full back electrode solar battery Download PDFInfo
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- CN102709386A CN102709386A CN2012101417906A CN201210141790A CN102709386A CN 102709386 A CN102709386 A CN 102709386A CN 2012101417906 A CN2012101417906 A CN 2012101417906A CN 201210141790 A CN201210141790 A CN 201210141790A CN 102709386 A CN102709386 A CN 102709386A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to the technical field of a solar battery preparation method, and especially relates to a method used for preparing a full back electrode solar battery. The method comprises the following steps: preparing a silicon oxide layer on a silicon slice back, carrying out selectivity sculpture on the back silicon oxide layer, and forming an n+ layer on a naked region which is not protected by the silicon oxide layer through phosphorus diffusion, and subsequently, coating metal aluminum on a region which needs to carry out metalation on the silicon oxide layer and the n+ layer, carrying out laser sintering in an aluminum region on the silicon oxide layer, enabling the aluminium to infiltrate Si so as to form a p+ layer, and forming an ohm touch. The method provided by the invention has the beneficial effects that the preparation flow path of a full back electrode is greatly simplified, the technological process is simple, the silicon layer sculpture is not needed, the silicon material is saved, and the cost of the whole preparation flow is reduced.
Description
Technical field
The present invention relates to the solar cell preparation method technical field, particularly a kind of method for preparing full back electrode solar cell.
Background technology
Full back electrode solar cell is a kind of battery that positive and negative electrode all is placed on cell backside; The configuration of electrodes of this special construction can be eliminated the metal electrode eclipsing loss of sensitive surface fully; Improve the photogenerated current of battery, full back electrode solar cell promptly is so-called integrated back contact (IBC) structure.This type cell of U.S. SunPower company production at present, peak efficiency has reached 24%.
Yet the conventional process for preparing full back electrode solar cell at present is very loaded down with trivial details because a key point of full back electrode solar cell, be form overleaf two kinds of n+, p+ different heavily mix the zone and the extraction electrode that metallizes in the above.At present the common technology of the full back electrode solar cell of preparation is after n type silicon chip is carried out boron diffusion forming continuous p+ diffusion layer; Etching is removed the p+ zone of back portion and positive p+ zone again; Mask carries out phosphorous diffusion then, and the subregion forms the n+ diffusion layer overleaf.This technology need etch away positive p+ layer, formed the waste of silicon material, and processing step is loaded down with trivial details, is unfavorable for industrialization production.
Summary of the invention
Technical problem to be solved by this invention is: simplify processing step, in whole technology, need not silicon layer is carried out etching simultaneously, save the silicon material.
The technical solution adopted for the present invention to solve the technical problems is: a kind of method for preparing full back electrode solar cell; Prepare silicon dioxide layer at the silicon chip back side; Silicon dioxide layer to the back side carries out selective etch; Formed the n+ layer through phosphorous diffusion by the exposed regions of silicon dioxide layer protection, the metallized regional evaporation metal aluminium of the needs on silicon dioxide layer and n+ layer subsequently, on silicon dioxide layer, growing has the place of aluminium to carry out laser sintered; Aluminium is infiltrated form the p+ layer among the Si, and form ohmic contact.
Concrete performing step is following:
1) chooses p type monocrystalline silicon piece;
2) surface clean, and carry out front surface making herbs into wool;
3) dry-oxygen oxidation all prepares the silicon dioxide layer that not only is used for mask but also is used for passivation silicon chip two-sided;
4) need to form the silicon dioxide in the zone of n+ layer with laser ablation process or etching technics removal;
5) phosphorous diffusion;
6) use mask means thick aluminium of 2-3 μ m on the metallized regional vapor deposition of needs;
7) FGA annealing makes n+ zone and aluminium form ohmic contact;
8) laser sinteredly be formed on the silicon dioxide layer the long place that aluminium arranged and carry out laser sinteredly, make aluminium infiltrate the metallization that forms among the Si on p+ layer and the p+ layer.
Laser ablation process in the step 4 is specially: carry out lbg at the silicon chip back side; Removal needs the silicon dioxide in the zone of formation n+ layer, and with the affected layer that NaOH erosion removal laser causes, wherein the concentration of NaOH is 20-300g/L; Etching time is 1-30mins, and temperature is a room temperature.
The invention has the beneficial effects as follows: greatly simplified the preparation flow of full back electrode, technical process is simple, and need not the silicon layer etching, saves the silicon material, thereby has reduced the cost of whole preparation flow.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is the sketch map of silicon chip of the present invention;
Fig. 2 is the sketch map that silicon chip of the present invention carries out making herbs into wool;
Fig. 3 is the sketch map that silicon chip of the present invention gets into dry-oxygen oxidation;
Fig. 4 is the sketch map of removal silicon chip back portion silicon dioxide layer of the present invention;
Fig. 5 is the sketch map that silicon chip of the present invention carries out the diffusion of phosphorus source;
Fig. 6 is the sketch map that silicon chip of the present invention is aluminized;
Fig. 7 is that silicon chip of the present invention carries out laser sintered sketch map;
Among the figure, 1. silicon chip, 2. silicon dioxide layer, 3.n+ layer, 4. aluminium, 5.p+ layer.
Embodiment
As shown in Figure 7, a kind of method for preparing full back electrode solar cell prepares silicon dioxide layer 2 at silicon chip 1 back side; Silicon dioxide layer 2 to the back side carries out selective etch; Formed n+ layer 3 through phosphorous diffusion by the exposed regions of silicon dioxide layer 2 protection, the metallized regional evaporation metal aluminium 4 of needs on silicon dioxide layer 2 and n+ layer 3 subsequently, on silicon dioxide layer 2, growing has the place of aluminium 4 to carry out laser sintered; Aluminium 4 is infiltrated form p+ layer 5 among the Si, and formation ohm touches.
Concrete performing step is following:
1) choose p type monocrystalline silicon piece 1, as shown in Figure 1;
2) surface clean, and carry out front surface making herbs into wool, as shown in Figure 2;
3) dry-oxygen oxidation all prepares the silicon dioxide layer 2 that not only is used for mask but also is used for passivation silicon chip 1 two-sided, and is as shown in Figure 3;
4) carry out lbg at silicon chip 1 back side, removal needs the silicon dioxide in the zone of formation n+ layer 3, and with the affected layer that NaOH erosion removal laser causes, wherein the concentration of NaOH is 20-300g/L,
Etching time is 1-30mins, and temperature is room temperature, and is as shown in Figure 4;
5) phosphorous diffusion, as shown in Figure 5;
6) use mask means thick aluminium 4 of 2-3 μ m on the metallized regional vapor deposition of needs, as shown in Figure 6;
7) FGA annealing (mist annealing) makes n+ zone and aluminium 4 form ohmic contact;
8) laser sinteredly be formed on the silicon dioxide layer 2 the long place that aluminium 4 arranged and carry out laser sinteredly, make aluminium 4 infiltrate the metallization that forms among the Si on p+ layer 5 and the p+ layer 5, as shown in Figure 7.
Claims (3)
1. method for preparing full back electrode solar cell; It is characterized in that: prepare silicon dioxide layer at the silicon chip back side, the silicon dioxide layer at the back side carried out selective etch, by the exposed regions of silicon dioxide layer protection through phosphorous diffusion formation n+ layer; The metallized regional evaporation metal aluminium of needs on silicon dioxide layer and n+ layer subsequently; The long place that aluminium arranged is carried out laser sinteredly on silicon dioxide layer, aluminium is infiltrated form the p+ layer among the Si, and form ohm and touch.
2. the method for the full back electrode solar cell of preparation according to claim 1 is characterized in that: concrete performing step is following:
1) chooses p type monocrystalline silicon piece;
2) surface clean, and carry out front surface making herbs into wool;
3) dry-oxygen oxidation all prepares the silicon dioxide layer that not only is used for mask but also is used for passivation silicon chip two-sided;
4) need to form the silicon dioxide in the zone of n+ layer with laser ablation process or etching technics removal;
5) phosphorous diffusion;
6) use mask means thick aluminium of 2-3 μ m on the metallized regional vapor deposition of needs;
7) FGA annealing makes n+ zone and aluminium form ohmic contact;
8) laser sinteredly be formed on the silicon dioxide layer the long place that aluminium arranged and carry out laser sinteredly, make aluminium infiltrate the metallization that forms among the Si on p+ layer and the p+ layer.
3. the method for the full back electrode solar cell of preparation according to claim 1 is characterized in that:
Laser ablation process in the step 4 is specially: carry out lbg at the silicon chip back side; Removal needs the silicon dioxide in the zone of formation n+ layer, and with the affected layer that NaOH erosion removal laser causes, wherein the concentration of NaOH is 20-300g/L; Etching time is 1-30mins, and temperature is a room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101417906A CN102709386A (en) | 2012-05-08 | 2012-05-08 | Method for preparing full back electrode solar battery |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012101417906A CN102709386A (en) | 2012-05-08 | 2012-05-08 | Method for preparing full back electrode solar battery |
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| CN102709386A true CN102709386A (en) | 2012-10-03 |
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| CN2012101417906A Pending CN102709386A (en) | 2012-05-08 | 2012-05-08 | Method for preparing full back electrode solar battery |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103762258A (en) * | 2014-01-07 | 2014-04-30 | 东莞职业技术学院 | Efficient all back electrode type solar cell |
| CN103985780A (en) * | 2013-02-08 | 2014-08-13 | 上海凯世通半导体有限公司 | Manufacturing method of solar energy battery |
| CN108666378A (en) * | 2018-07-11 | 2018-10-16 | 泰州隆基乐叶光伏科技有限公司 | A kind of p-type back contacts solar cell and preparation method thereof |
| CN113471337A (en) * | 2021-07-06 | 2021-10-01 | 安徽华晟新能源科技有限公司 | Preparation method of heterojunction solar cell |
Citations (5)
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|---|---|---|---|---|
| CN1158011A (en) * | 1995-11-22 | 1997-08-27 | 埃伯乐太阳能公司 | Structure and fabrication process for aluminum alloy junction self-aligned back contact silicon solar cell |
| US7517709B1 (en) * | 2007-11-16 | 2009-04-14 | Applied Materials, Inc. | Method of forming backside point contact structures for silicon solar cells |
| US20100236613A1 (en) * | 2009-03-17 | 2010-09-23 | Jong-Jan Lee | Single Heterojunction Back Contact Solar Cell |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
| CN102437239A (en) * | 2011-11-30 | 2012-05-02 | 中山大学 | Full back electrode aluminium back junction solar cell manufacture technology |
-
2012
- 2012-05-08 CN CN2012101417906A patent/CN102709386A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1158011A (en) * | 1995-11-22 | 1997-08-27 | 埃伯乐太阳能公司 | Structure and fabrication process for aluminum alloy junction self-aligned back contact silicon solar cell |
| US7517709B1 (en) * | 2007-11-16 | 2009-04-14 | Applied Materials, Inc. | Method of forming backside point contact structures for silicon solar cells |
| US20100236613A1 (en) * | 2009-03-17 | 2010-09-23 | Jong-Jan Lee | Single Heterojunction Back Contact Solar Cell |
| CN102208493A (en) * | 2011-05-20 | 2011-10-05 | 上海采日光伏技术有限公司 | Manufacturing method of full back electrode solar cell |
| CN102437239A (en) * | 2011-11-30 | 2012-05-02 | 中山大学 | Full back electrode aluminium back junction solar cell manufacture technology |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985780A (en) * | 2013-02-08 | 2014-08-13 | 上海凯世通半导体有限公司 | Manufacturing method of solar energy battery |
| CN103985780B (en) * | 2013-02-08 | 2016-08-31 | 上海凯世通半导体股份有限公司 | The manufacture method of solaode |
| CN103762258A (en) * | 2014-01-07 | 2014-04-30 | 东莞职业技术学院 | Efficient all back electrode type solar cell |
| CN103762258B (en) * | 2014-01-07 | 2016-04-06 | 东莞职业技术学院 | A kind of Efficient all back electrode type solar cell |
| CN108666378A (en) * | 2018-07-11 | 2018-10-16 | 泰州隆基乐叶光伏科技有限公司 | A kind of p-type back contacts solar cell and preparation method thereof |
| CN113471337A (en) * | 2021-07-06 | 2021-10-01 | 安徽华晟新能源科技有限公司 | Preparation method of heterojunction solar cell |
| CN113471337B (en) * | 2021-07-06 | 2023-02-17 | 安徽华晟新能源科技有限公司 | Preparation method of heterojunction solar cell |
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Application publication date: 20121003 |