CN103762258A - Efficient all back electrode type solar cell - Google Patents
Efficient all back electrode type solar cell Download PDFInfo
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- CN103762258A CN103762258A CN201410007622.7A CN201410007622A CN103762258A CN 103762258 A CN103762258 A CN 103762258A CN 201410007622 A CN201410007622 A CN 201410007622A CN 103762258 A CN103762258 A CN 103762258A
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- 238000009792 diffusion process Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 69
- 239000011241 protective layer Substances 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 210000004027 cell Anatomy 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 7
- 241001424688 Enceliopsis Species 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 230000001172 regenerating effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000282320 Panthera leo Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010913 used oil Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention relates to the technical field of solar cells, in particular to an efficient all back electrode type solar cell. The solar cell comprises a solar panel arranged on the outer layer, wherein a zigzag stepped surface with long edges and short edges arranged alternately is arranged on the bottom of the solar panel, each long edge is provided with a PN junction diffusion layer and a diffusion layer electrode, and each short edge is provided with a substrate electrode. Due to the fact that the PN junction diffusion layers are arranged on the zigzag long edges, the contact area between a P region and an N region, namely the area of a PN junction region is increased as much as possible. Besides, due to the fact that the substrate electrode layers are arranged on the short edges of the stepped surface, the short edges are arranged to be perpendicular to the surface of the solar panel as far as possible, so that solar rays shining on the solar panel can almost completely shine on the PN junction diffusion layers. In this way, the area of the PN junction diffusion layers can be increased, solar rays can be fully absorbed, sufficient width is guaranteed for the substrate electrode layers, and then the electric generating capacity and conversion efficiency of the solar cell are improved to the greatest extent.
Description
Technical field
The present invention relates to technical field of solar batteries, refer in particular to a kind of efficient all back-contact electrodes solar cell.
Background technology
The energy is the basis of a national economy and social development, the fossil energies such as now widely used oil, natural gas, coal are faced with stern challenge, and development and utilization is clean, green, regenerative resource is the important leverage that solves energy and environment contradiction, realizes sustainable development.
Among all regenerative resources, no matter from the quantity of resource, the generality of distribution, or from the reliable maturity of spatter property, technology, solar energy all has larger superiority, photovoltaic generation has become the primary manner of renewable energy utilization, and crystal silicon solar batteries is always in occupation of the lion's share in photovoltaic market.The same with other regenerative resource, the maximum restraining factors that solar cell photovoltaic generating is promoted remain cost of electricity-generating, therefore, improve the conversion efficiency of solar cell, are the heat subjects of scientific research always.
What the crystal silicon solar batteries of occuping market main flow still adopted at present is double-face electrode manufacturing process, its advantage is that manufacturing process is simple, shortcoming is also apparent, because the part sensitive surface of solar battery front side is stopped by electrode, reduce the effective area of solar cell, thereby reduced energy output and the conversion efficiency of solar cell.
In order to address this problem, people have invented all back-contact electrodes solar cell (as shown in Figure 1), this is a kind of manufacturing process that anodal and negative pole is all integrated in to rear surface of solar cell, adopt the solar cell of this manufacturing process, because its positive sensitive surface is not stopped by electrode, sunlight can irradiate into solar cell surface completely, thereby has improved widely the conversion efficiency of solar cell.The PN junction diffusion layer 2 that need to carry out selectively at rear surface of solar cell the diffusion of P or N-type due to this manufacturing process, and the PN junction diffusion layer electrode 5(that will form selectively P electrode or N electrode on corresponding PN junction diffusion layer 2 is in order to realize effective contact, and some also needs to form corresponding P+ or N+ layer); Underlayer electrode layer 3 is that the back side forms underlayer electrode 6(that N electrode or P electrode form in order to realize effective contact, and some also needs to form corresponding N+ or P+ layer).Form PN junction diffusion layer 2 and alternately appearance of underlayer electrode layer 3.
Take N-type substrate all back-contact electrodes solar panel as example, because the p type diffused layer (PN junction diffusion layer) that only has its back side could form PN junction with N-type substrate, realize photovoltaic generation, therefore, wish that the area that p type diffused layer occupies is the bigger the better, but for solar cell electricity power is guided to greatest extent, the necessary alternative arrangement of the N-type substrate at the back side and the electrode layer above p type diffused layer, N-type underlayer electrode layer must have enough width simultaneously; Like this, in fact just reduce the effective area of solar cell, reduced to a certain extent energy output and the conversion efficiency of solar cell.
Summary of the invention
A kind of efficient all back-contact electrodes solar cell; described solar cell comprises and is arranged on outer field solar panel; described solar panel bottom arranges the zigzag cascaded surface that long and short limit replaces; on long limit, PN junction diffusion layer and diffusion layer electrode are set; on minor face, form underlayer electrode; PN junction diffusion layer bottom also arranges protective layer, and the protective layer of long limit, minor face below arranges respectively diffusion layer electrode and underlayer electrode outward.
Preferably, described minor face and the solar panel vertical setting in surface.
Preferably, described solar panel is N-type substrate solar panel, and described PN junction diffusion layer is p type diffused layer, and described diffusion layer electrode is P type electrode, and described underlayer electrode is N-type electrode.
Preferably, described solar panel is P type substrate solar panel, and described PN junction diffusion layer is n type diffused layer, and described diffusion layer electrode is N-type electrode, and described underlayer electrode is P type electrode.
Beneficial effect of the present invention is, a kind of efficient all back-contact electrodes solar cell, described solar cell comprises and is arranged on outer field solar panel, described solar panel bottom arranges the zigzag cascaded surface that long and short limit replaces, on long limit, PN junction diffusion layer is set, on minor face, form underlayer electrode, electrode diffusion layer bottom also arranges protective layer, and the protective layer of long limit, minor face below arranges respectively PN junction diffusion layer electrode, underlayer electrode outward, by PN junction diffusion layer being set on jagged long limit, the contact area that can make P district and N district is that the area in PN junction district increases as much as possible, in addition because underlayer electrode layer is arranged on short step surface, can be by minor face and the solar panel vertical setting in surface as far as possible, like this, the sunray inciding on solar panel is just almost irradiated on PN junction diffusion layer completely, therefore, such structure both can increase the area of PN junction diffusion layer, fully absorb sunray, can guarantee that again underlayer electrode layer has enough width, effectively solar panel electricity power is guided, thereby energy output and the conversion efficiency of solar cell have been improved to greatest extent.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of prior art back electrode solar cell
Fig. 2 is the schematic diagram of the efficient back electrode solar cell of the present invention
Embodiment
Below in conjunction with accompanying drawing 2, the present invention is further elaborated:
A kind of efficient all back-contact electrodes solar cell; described solar cell comprises and is arranged on outer field solar panel 1; described solar panel 1 bottom arranges the zigzag cascaded surface that long and short limit 11,12 replaces; on long limit 11, PN junction diffusion layer 2 is set; on minor face 12, form underlayer electrode layer 3; PN junction diffusion layer 2 bottoms also arrange protective layer 4, outer PN junction diffusion layer electrode 5, the underlayer electrode 6 of arranging respectively of protective layer 4 of long limit 11, minor face 12 belows.
In order to increase the illuminating area of PN junction diffusion layer 2, reduce the absorption of underlayer electrode to incident sunray, minor face 12 and the solar panel 1 vertical setting in surface, the light that front illuminated is come can be irradiated to PN junction diffusion layer 2 substantially completely, and by underlayer electrode 3, is not absorbed.
When solar panel 1 is N-type substrate solar panel 1, described PN junction diffusion layer 2 is p type diffused layer, and described diffusion layer electrode 5 is P type electrode, and described underlayer electrode 6 is N-type electrode.
When solar panel 1 is P type solar panel 1, described PN junction diffusion layer 2 is n type diffused layer, and described diffusion layer electrode 5 is N-type electrode, and described underlayer electrode 6 is P type electrode.
The roughly production technology of the efficient all back-contact electrodes solar cell of the present invention is, by being carved to the methods such as food by mechanical lapping, chemical corrosion, ion, the back side of solar panel 1 is processed into zigzag step surface, utilize and the similar lithographic fabrication processes of semiconductor integrated circuit, on long limit 11, by methods such as thermal diffusions, formed PN junction diffusion layer 2 selectively, then, at the back side of solar panel 1, form the protective layer 4 of one deck oxide, nitride etc.; Finally, outer PN junction diffusion layer electrode 5, the underlayer electrode 6 of arranging respectively of protective layer 4 below the long limit 11 of zigzag, minor face 12, diffusion layer electrode 5, underlayer electrode 6 are connected to PN junction diffusion layer 2, substrate opening district 3.In order to improve electrode, contact with the effective of P layer with N layer, can between N layer and N-type electrode, N+ layer be set by methods such as Implantations, between P layer and P type electrode, P+ layer is set.
The present invention is by arranging PN junction diffusion layer on jagged long limit, the contact area that can make P district and N district is that the area in PN junction district increases as much as possible, in addition because underlayer electrode layer is arranged on short step surface, and minor face is vertical with solar panel surface, like this, the sunray inciding on solar panel is just almost irradiated on PN junction diffusion layer completely, therefore, such structure both can increase the area of PN junction diffusion layer, fully absorb sunray, can guarantee that again underlayer electrode layer has enough width, effectively solar panel electricity power is guided, thereby energy output and the conversion efficiency of solar cell have been improved to greatest extent.
The above embodiment, it is preferred embodiments of the present invention, be not to limit the scope of the present invention, the equivalence of doing according to structure, feature and principle described in the present patent application the scope of the claims therefore all changes or modifies, and all should be included in patent claim of the present invention.
Claims (4)
1. an efficient all back-contact electrodes solar cell, it is characterized in that: described solar cell comprises and is arranged on outer field solar panel (1), described solar panel (1) bottom arranges length, minor face (11, 12) the zigzag cascaded surface replacing, on long limit (11), PN junction diffusion layer (2) is set, minor face (12) upper formation underlayer electrode layer (3), PN junction diffusion layer (2) bottom also arranges protective layer (4), long limit (11), the outer PN junction diffusion layer electrode (5) that arranges respectively of protective layer (4) of minor face (12) below, underlayer electrode (6).
2. the efficient all back-contact electrodes solar cell of one according to claim 1, is characterized in that: described minor face (12) and vertical setting the in solar panel (1) surface.
3. the efficient all back-contact electrodes solar cell of one according to claim 1, it is characterized in that: described solar panel (1) is N-type substrate solar panel (1), described PN junction diffusion layer (2) is p type diffused layer, described diffusion layer electrode (5) is P type electrode, and described underlayer electrode (6) is N-type electrode.
4. the efficient all back-contact electrodes solar cell of one according to claim 1, it is characterized in that: described solar panel (1) is P type substrate solar panel (1), described PN junction diffusion layer (2) is n type diffused layer, described diffusion layer electrode (5) is N-type electrode, and described underlayer electrode (6) is P type electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410007622.7A CN103762258B (en) | 2014-01-07 | 2014-01-07 | A kind of Efficient all back electrode type solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410007622.7A CN103762258B (en) | 2014-01-07 | 2014-01-07 | A kind of Efficient all back electrode type solar cell |
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| Publication Number | Publication Date |
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| CN103762258A true CN103762258A (en) | 2014-04-30 |
| CN103762258B CN103762258B (en) | 2016-04-06 |
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| CN201410007622.7A Expired - Fee Related CN103762258B (en) | 2014-01-07 | 2014-01-07 | A kind of Efficient all back electrode type solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576043A (en) * | 2016-03-08 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | Diode and forming method thereof |
| CN109192816A (en) * | 2018-09-04 | 2019-01-11 | 苏州钱正科技咨询有限公司 | The manufacturing method and solar battery of solar battery |
| CN109216480A (en) * | 2018-09-04 | 2019-01-15 | 苏州钱正科技咨询有限公司 | A kind of p type single crystal silicon battery and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102709386A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for preparing full back electrode solar battery |
| WO2013003282A2 (en) * | 2011-06-28 | 2013-01-03 | Varian Semiconductor Equipment Associates, Inc. | Use of a shadow mask and a soft mask for aligned implants in solar cells |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| CN103367547A (en) * | 2013-07-16 | 2013-10-23 | 苏州润阳光伏科技有限公司 | Full-back-electrode solar cell and method for manufacturing full-back-electrode solar cell |
| US8574951B1 (en) * | 2013-02-20 | 2013-11-05 | National Tsing Hua University | Process of manufacturing an interdigitated back-contact solar cell |
-
2014
- 2014-01-07 CN CN201410007622.7A patent/CN103762258B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013003282A2 (en) * | 2011-06-28 | 2013-01-03 | Varian Semiconductor Equipment Associates, Inc. | Use of a shadow mask and a soft mask for aligned implants in solar cells |
| CN102709386A (en) * | 2012-05-08 | 2012-10-03 | 常州天合光能有限公司 | Method for preparing full back electrode solar battery |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| US8574951B1 (en) * | 2013-02-20 | 2013-11-05 | National Tsing Hua University | Process of manufacturing an interdigitated back-contact solar cell |
| CN103367547A (en) * | 2013-07-16 | 2013-10-23 | 苏州润阳光伏科技有限公司 | Full-back-electrode solar cell and method for manufacturing full-back-electrode solar cell |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105576043A (en) * | 2016-03-08 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | Diode and forming method thereof |
| CN105576043B (en) * | 2016-03-08 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | diode and forming method thereof |
| CN109192816A (en) * | 2018-09-04 | 2019-01-11 | 苏州钱正科技咨询有限公司 | The manufacturing method and solar battery of solar battery |
| CN109216480A (en) * | 2018-09-04 | 2019-01-15 | 苏州钱正科技咨询有限公司 | A kind of p type single crystal silicon battery and its manufacturing method |
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| CN103762258B (en) | 2016-04-06 |
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