CN1027011C - 一种硅梁压阻加速度传感器及其制造方法 - Google Patents
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- 230000001133 acceleration Effects 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 120
- 239000010703 silicon Substances 0.000 claims abstract description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 119
- 230000003647 oxidation Effects 0.000 claims abstract description 33
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 12
- 230000007797 corrosion Effects 0.000 claims description 18
- 238000005260 corrosion Methods 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000407 epitaxy Methods 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 11
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- -1 NaOH or aqua ammonia Chemical compound 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 235000011114 ammonium hydroxide Nutrition 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 238000000427 thin-film deposition Methods 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000005468 ion implantation Methods 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000002349 favourable effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000013461 design Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910018125 Al-Si Inorganic materials 0.000 description 3
- 229910018520 Al—Si Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012552 review Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 208000036574 Behavioural and psychiatric symptoms of dementia Diseases 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000012749 thinning agent Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
本发明提供了一种单面加工硅梁压阻加速度传感器及其制造方法,该传感器的特点是具有起质量块作用的硅膜的二条或四条对称分布的硅梁水平跨接在局部掏空的硅片上并由其硅片所支撑,其形成的主要步骤为:a、采用外延、扩散或离子注入技术提供制作硅梁和硅膜的外延层和在设计的掏空区域内形成低阻区;b、阳极氧化低阻区,腐蚀多孔硅。采用本方法有利于提高器件的性能、成品率,便于集成和大批量生产。
Description
本发明涉及一种加速度传感器,特别涉及一种单面加工硅梁压阻加速度传感器及其制造方法。
如图1所示的现有硅梁压阻加速度传感器(Sensor Review Statf“Sersor technology:Japan update”,Sensor Review,Vol.8,No.4,P.207,1988),都是从硅片的两面进行加工,从背面进行深度方向的化学腐蚀直至留下一层很薄的硅梁,在硅梁上制作压阻电阻器。背面化学腐蚀方法不外乎有两种:(1)用高掺硼的P+层作腐蚀阻挡层,用EDP(乙二胺、焦儿茶酚和水)作腐蚀剂;(R.M.Finne and D.L.Klei,“A Water-amine-complexing agent systemfor etching silicon,”J.Electrochem.Sco.,Vol.114,p.965,1967)(2)在有n/p结构的n型层上加偏压,用热碱性溶液或联氨水溶液作腐蚀剂。(H.A.Waggener,“Electrochemically controlled thinning of silicon,”Bell Syst.Tech.J.,Vol.50,p.473,1970)用这两种方法都不能获得几个微米厚、低电子浓度的n-型硅梁,这是因为硅的自掺杂效应,不能在P-型衬底上生长很薄的低阻n-型外延层。另外,对
硅片的横向腐蚀只能在硅片的表面淀积一层防腐蚀的薄膜加以限制,由于钻蚀效应,横向腐蚀不能达到精确控制。图1所示的是用上述技术制作出来的最新器件,这种器件的封装也是很复杂的,为了防止器件由于过载而遭受损坏,在硅梁外端的上下方都须设置阻挡块。
为了克服现有硅梁压阻加速度传感器及其制造方法中的问题,以利提高传感器的灵敏度、可靠性、使用寿命以及器件生产的成品率,本发明提供一种单面加工的硅梁压阻加速度传感器及其制备方法。
本发明为一种在硅梁上制造压阻电阻器的硅梁加速度传感器,其特征在于二条或四条对称公布的硅梁中心连接起质量块作用途的硅膜,硅梁和硅膜作为一个整体水平跨接在局部掏空的硅片上,并由其硅片所支撑。
本发明所采用的硅衬底为n-型硅,其载流子浓度为1015-5×1016/cm3,该传感器的硅膜和硅梁的结构形状和尺寸是根据器件的要求而设计的。
本发明的硅梁压阻加速度传感器的制造方法,包括制作硅梁以及在硅梁上用扩散或离子注入的方法形成压阻电阻器,其特征是在硅衬底的单面进行加工形成硅膜和硅梁,硅膜起质量块作用,硅膜和硅梁形成的主要步骤是:a.在硅衬底上采用外延、扩散或离子注入技术提供制作硅膜和硅梁的外延层及在硅膜和硅梁的设计区的下方、硅梁设计区的两侧形成连通的低阻区;b.采用阳极氧化技术,使阳极电流流过这一低阻区,使低阻区的硅转变成多孔硅;c.用腐蚀液腐蚀阳极氧化所形成的多孔硅,在硅体内形成空槽和空腔,并形成悬空的硅膜和硅梁。
上面所说的在硅衬底上采用外延技术制作硅膜和硅梁是指在n-型硅衬底上进行两次n型外延,其第一次外延厚度等于所需硅膜的厚度,第二次外延层厚度等于硅梁的厚度,外延层杂质浓度均为1015-5×1016/cm3。所说的采用扩散或离子注入技术在硅膜和硅梁设计区的下方、硅梁设计区的两侧形成连通的低阻区,本发明是采用两次n型杂质扩散或离子注入和一次n型杂质深扩散来实现的,其具体步骤是:在硅膜设计区的下方的硅衬底上进行n型杂质扩散或离子注入形成高浓度的n+埋层区,在硅片上进行第一次n型外延,使其外延层厚度等于硅膜厚,再对埋层区边缘的外延层进行n型杂质深扩散,扩散结深大于第一外延层厚度,并且形成与埋层相通的浓度大于1×1017/cm3的低阻区,该低阻区的杂质浓度一般可为1×1017/cm3-1021/cm3,接着进行第二次n型外延,使其外延层厚度等于硅梁的厚度,再在第二层外延层上进行阳极氧化窗口n+扩散或离子注入。
本发明将低阻区的硅转变成多孔硅的阳极氧化是在氢氟酸溶液中进行的,氢氟酸的溶液的浓度为10-50%,稀释剂为水或乙醇,其阳极氧化的电压控制在3-10V,阳极电流为20-100mA/cm2。腐蚀多孔硅的腐蚀液为稀碱性溶液,如用氢氧化钾,氢氧化钠或氢氧化铵等溶液,其浓度为2-10%。
根据器件的要求,可在起质量块作用的硅膜的上方再添加一定质量的质量块。
本发明的优点是:
1.硅梁由单面加工而成,其制作工艺与硅集成电路平面工艺兼容,因此容易实现集成化,容易大批量生产。
2.采用的腐蚀方法对硅片的纵向和横向腐蚀都能精确控制,因此加工的硅梁精度高,尺寸小,有利于提高器件的灵敏度,重复率和成品率。
3.为形成硅梁而腐蚀除去的硅量极微,不损害硅片的机械强度,有利于提高器件的可靠性和使用寿命。
4.封闭简单,结构紧凑,由于器件本身具有阻尼框结构,不需要额外的阻挡块。
图面说明
图1为现有技术制作的硅梁压阻加速度传感器的示意图。
图2为本发明制作的硅梁压阻加速度传感器的示意图。
其中图2-a为其顶视图,图2-b、图2-c为其剖视图。
图3为实施例中制作硅梁压阻加速度传感器的主要工序芯面图。
图3-a至图3-g和图3-i至图3-l为图2中的B-B剖视图,
图3-h和图3-m为图2中的A-A剖视图。
图3-a为氧化、光刻、n+埋层注入。
图3-b为埋层注入推进。
图3-c为n-型硅外延生长。
图3-d为n+阳极氧化通道扩散。
图3-e为n-型硅外延生长。
图3-f为n+阳极氧化窗口注入。
图3-g为n+阳极氧化窗口注入推进。
图3-h为p+压阻电阻器区注入。
图3-i为n+硅梁低阻导电层注入。
图3-j为淀积氮化硅和多晶硅,光刻阳极氧化窗口。
图3-k为阳极氧化。
图3-l为腐蚀多孔硅。
图3-m为引线和钝化。
图中:
1-n-型硅 2-二氧化硅 3-n+埋层
4-n-型外延层 5-n+扩散区 6-n-型外延层Ⅱ
7-n+窗口注入区 8-P+压阻电阻器
9-n+低阻导电层注入区 10-多晶硅 11-氮化硅
12-多孔硅 13-硼磷硅玻璃 14-3%磷硅玻璃
15-AL-SI 16-硅梁 17-起质量块作用的硅膜
18-硅质量块 19-金质量块 20-集成电路
下面结合附图3对本发明的实施例加以具体描述:
实施例:
梁的尺寸为2000μm×50μm×2μm,起质量块作用的硅膜尺寸为600μm×600μm×40μm,硅膜下方的间隔4μm,四个两对压阻电阻器分别制作在四个硅梁的边缘上,一对垂直于<110>方向,另一对平行于<110>方向。
其主要工艺流程步骤如下:
(1)热氧化:载流子浓度为3×1015/cm3的(100)n-型硅片(1)在1100℃下,湿氧氧化105分钟,生长二氧化硅(2);
(2)在(100)n-型硅片(1)上光刻600μm×600μmn+埋层注入区;
(3)腐蚀掉埋层注入区的SiO2;
(4)在SiO2的掩蔽下进行n+埋层注入As+形成埋层区(3),在100Kev下注入,注入剂量为2×1014/cm2;
上述工艺流程步骤(1)-(4)如图3-a所示。
(5)在O2、N2的气氛下进行n+埋层推进,其条件为在1200℃下,O2∶N2=0.2∶0.8,推进900分钟,结深为4μm。
这一工艺步骤如图3-b所示。
(6)腐蚀SiO2;
(7)除掉硅表面上所有的SiO2后,在整个硅的表面上进行n型外延生长,外延层Ⅰ(4)厚度40μm,外延层杂质浓度为3×1015/cm3;其生长条件为:H2:260L/min,SCl4:6.4-7g/min,PH2:100ppm,0.15-0.18L/min,1160℃生长80分钟;
这一工艺步骤如图3-c所示。
在1100℃下湿氧氧化105分钟;
(9)光刻n+阳极氧化通道扩散区,扩散区的位置为在埋层区(3)周围的2000μm宽的区域内;
(10)腐蚀n+阳极氧化通道扩散区的SiO2;
(11)n+阳极氧化通道区(5)扩散;双温区锑扩散,扩散温度分别为950℃和1250℃,Sb2O3源量为22g,N2:3L/min,O2:3L/min,预淀积20分钟,再扩散682分钟,得表面浓度2-3×1019/cm3,结深大于44μm与埋层区(3)相通形成连通的低阻区;
上述工艺步骤(8)-(11)如图3-d所示。
(12)腐蚀SiO2;
(13)腐蚀掉硅片上的所有的SiO2后进行第二次n-型外延生长,生长外延层(Ⅱ)(6)厚度为2.5μm,杂质浓度为3×1015/cm3,生长条件:H2:260L/min,SiCl4:6.4-7g/min,PH3:100ppm,0.15-0.18L/min,在1175℃下生长4分钟;这一工艺步骤如图3-e所示。
(14)热氧化:在1100℃下湿氧氧化105分钟;
(15)光刻n+阳极氧化窗口区,其窗口区的位置为在埋层区(3)周围2000μm宽的范围内(硅梁区除外);
(16)腐蚀n+阳极氧化窗口区的SiO2;
(17)n+阳极氧化窗口注入形成注入区(7):注入P+,其条件为40Kev,注入剂量为1×1014/cm2;这一工艺步骤如图3一个所示。
(18)n+阳极氧化窗口注入的推进:其条件为在O2∶N2=0.2∶0.8的气氛下,1200℃推进900分钟,结深为大于2μm,使注入推进后与原来低阻区相连通;
这一工艺步骤如图3-g所示。
(19)在硅梁的设计区光刻P+压阻电阻器;
(20)P+注入(P型掺杂)形成P+压阻电阻器(8);
B+注入,条件为40kev,注入剂量为2×1015/cm2;
这一工艺步骤如图3-h所示。
(21)在硅膜的上表面设计区,光刻n+硅梁低阻导电层区;
(22)n+注入(n型掺杂)形成硅梁低阻导电层区(9);P+(磷离子)注入,条件为40Kev,注入剂是为3×1015/cm2;
这一工艺步骤如图3-1所示。
(23)淀积Si3N4(11):LPCVD下生长Si3N4,厚度为600A°;
(24)淀积多晶硅(10):LPCVD下淀积多晶硅厚度为5400A°;
(25)在低阻区光刻n+阳极氧化窗口区;
(26)腐蚀n+阳极氧化窗口区的SiO2、Si3N4、多晶硅;
上述工艺步骤(23)-(26)如图3-j所示。
(27)阳极氧化:阳极氧化使得低阻区的硅转变成多孔硅(12),其电介质组分为HF:C2H5OH=2∶1,阳极电压为7V,电流为40mA/cm2,阳极氧化30分钟;
这一工艺步骤如图3-K所示。
(28)腐蚀多孔硅(12),形成空槽和空腔,并形成悬空的硅膜和硅梁,硅膜的厚度等于外延层Ⅰ和外延层Ⅱ厚度之和,起质量块作用,硅梁的厚度等于外延层Ⅱ的厚度;
腐蚀条件:先用5%的KOH溶液,在室温下进行腐蚀;
这一工艺步骤如图3-l所示。
(30)BPSG流动:950℃,15分钟,N2;
(31)光刻接触孔;
(32)腐蚀BPSD、Si3N4、SiO2;
(33)BPSG回流:950℃,30分钟,N2;
(34)腐蚀SiO2;
(35)Al-Si(15)蒸发,1μm;
(36)光刻Al-Si互连;
(37)腐蚀Al-Si;
(38)淀积3%PSG(14),1μm;
(39)光刻压焊块;
(40)腐蚀PSG;
上述工艺步骤(29)-(40)为引线和钝化如图3-m所示。
本发明的这种硅梁压阻加速度传感器的制造工艺与CMOS集成电路工艺兼容,也就是说在该传感器的硅梁边缘的硅片上,采用CMOS电路工艺制备周边电路构成单片集成硅梁压阻加速度传感器是很容易实现的。这里的CMOS电路的制备工艺对该技术领域的技术人员是显而易见的。同时根据本文的具体描述,在发明的构思和范围内的各种变化和改进,对那些该技术领域内的熟练的技术人员来说也是显而易见的。
Claims (10)
1、一种在硅梁上制作压阻电阻器的硅梁压阻加速度传感器,其特征在二条或四条对称分布在硅梁连到中心起质量块作用的硅膜上,硅梁和硅膜作为一个整体水平跨接在局部掏空的硅片上,并由其硅片所支撑。
2、一种如权利要求1所述的硅梁压阻加速度传感器的制造方法,其特征在于硅衬底单面加工形成硅梁和具有起质量块作用的硅膜,其主要步骤如下:
a.提供高阻的n-型硅衬底,
b.通过扩散或离子注入在所说的衬底上的予定区域形成低阻的n-型层,
c.通过气相外延生长在所说的衬底上形成高阻的n-型硅外延层Ⅰ,
d.通过扩散在所说的外延层上的予定区域形成与所说的低阻的n-型硅层相连的低阻的n-型硅阳极氧化通道,
e.通过气相外延生长在所说的外延层Ⅰ上形成高阻的n-型硅外延层Ⅱ,
f.通过扩散或离子注入在所说的外延层Ⅱ上的予定区域形成与所说的阳极氧化通道相连的n-型硅阳极氧化窗口,
g.通过薄膜淀积在外延层Ⅱ上形成阳极氧化保护层,
h.通过阳极氧化,将所说的低阻的n-型硅转变成多孔硅,
i.用腐蚀液腐蚀所说的多孔硅,形成所说的硅梁和硅膜。
3、根据权利要求2所述的硅梁压阻加速度传感器的制造方法,其特征在于所说n-型硅衬底,其载流子浓度为105-5×1016/cm3。
4、根据权利要求2所述的硅梁压阻加速度传感器的制造方法,其特征在于所说的外延生长是在n-型硅衬底上进行两次n-型外延,其第一外延层厚度等于所需硅膜厚,第二外延层厚度等于硅梁厚,外延层杂质浓度为1015-5×1016/cm3。
5、根据权利要求2或4所述的硅梁压阻加速度传感器的制造方法,其特征在于所说的采用离子注入或扩散所形成的低阻区的浓度大于1×1017/cm3,第一次离子注入或扩散的结深等于硅膜下方的间隔,第二次n-型杂质深扩散的结深大于第一层外延层厚度,第三次离子注入或扩散,结深大于第二外延层厚度。
6、根据权利要求2所述的硅梁压阻加速度传感器的制造方法,其特征在于所说的阳极氧化是在氢氟酸溶液中进行的。
7、根据权利要求6所述的硅梁压阻加速度传感器的制造方法,其特征在于阳极氧化所用的氢氟酸溶液浓度为10-50%。
8、根据权利要求6或7所述的硅梁压阻加速度传感器的制造方法,其特征在于阳极氧化阳极电压控制在3-6V,阳极电流为20-100mA/cm2。
9、根据权利要求2或6所述的硅梁压阻加速度传感器的制造方法,其特征在于腐蚀多孔硅的腐蚀液为稀硷性溶液。
10、根据权利要求9所述的硅梁压阻加速度传感器的制造方法,其特征在于所说的稀硷性溶液为氢氧化钾,氢氧化钠或氢氧化氨等溶液,其浓度为2-10%。
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