CN102694072A - Preparation method for abrupt junction crystalline silicon solar cell - Google Patents
Preparation method for abrupt junction crystalline silicon solar cell Download PDFInfo
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- CN102694072A CN102694072A CN2012101834177A CN201210183417A CN102694072A CN 102694072 A CN102694072 A CN 102694072A CN 2012101834177 A CN2012101834177 A CN 2012101834177A CN 201210183417 A CN201210183417 A CN 201210183417A CN 102694072 A CN102694072 A CN 102694072A
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Abstract
The invention discloses a preparation method for an abrupt junction crystalline silicon solar cell. A crystalline silicon thin film is epitaxially prepared at low temperature on a crystalline silicon chip by adopting a chemical vapor deposition (CVD) method, and doped elements are activated by adopting a quick thermal annealing process; the large-area uniform deposition of the thin film can be realized by adopting hot filament CVD or plasma assisted CVD, so that the uniformity of the crystalline silicon solar cell is ensured; and quick thermal annealing treatment is adopted, so that the defects of the thin film in a low-temperature epitaxial process can be eliminated on the premise of ensuring that an abrupt junction structure is not remarkably diffused, and the doped elements are activated to obtain the crystalline silicon solar cell with a high-performance abrupt junction structure. The performance of a preparation device is optimized, the conversion efficiency of the solar cell is improved, and a process is simple and favorable for the realization of large-scale production.
Description
Technical field
The present invention relates to the solar cell device preparing technical field, relate in particular to a kind of preparation method of abrupt junction crystal silicon solar battery.
Background technology
In non-renewable energy resources such as fossil energy exhausted day by day today, energy crisis is approached day by day, and the new energy and renewable energy technologies are demanded Application and Development urgently, and solar energy is one of human available most important regeneration clean energy resource.Solar power generation is again a kind of very important use mode in the use of solar energy.At present crystal silicon solar battery is the main product of solar power generation, and afterwards still can main status, occuping market in a very long time.Development crystal silicon solar battery technology, to reducing sun cost of electricity-generating, the range of application that enlarges solar energy has very important significance.The theoretical analysis result of the performance of corresponding solar cell under the emitter doped chemical different distributions situation in the prior art, visible mutation knot technology helps the raising of solar cell performance.For the improvement of crystal silicon solar battery technology, developing the abrupt junction technology that the shallow junction height mixes at present is an important development direction of generally acknowledging in the present industry.In crystal silicon solar battery is produced now; The method of POCl3 diffusion is all adopted in the preparation of core process PN junction; This method is 800 ℃ of pyroprocesses (>), under present device structure and process conditions, if further carry out the improvement that the shallow junction height is mixed technology again; The uniformity of the battery sheet of then being produced is difficult to guarantee, is unfavorable for the carrying out of industrialization.So being difficult to mix technical elements at the shallow junction height more, the method for POCl3 diffusion improves.Desire further to improve the performance of body silion cell PN junction, must the exploitation new technology.Epitaxy is the method for a kind of excellence of preparation PN junction.But conventional epitaxy needs temperature high (general>600 ℃), at high temperature can cause the interface counterdiffusion, be difficult to guarantee the structure of abrupt junction, and cost is high with respect to existing POCl3 diffusion technology, is unfavorable for large batch of production.If crossing low, temperature is difficult to guarantee the quality of epitaxial film.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of abrupt junction crystal silicon solar battery, it has the advantage of the conversion efficiency of the performance that improves the crystal silicon battery PN junction and battery.
The present invention realizes that so a kind of preparation method of abrupt junction crystal silicon solar battery is characterized in that, said preparation method comprises:
1) preparation of abrupt junction epitaxial loayer: crystal silicon battery has two kinds of P-matrix and N-matrix.For P-type silicon chip, need epitaxial deposition N-type polycrystal silicon film; To the N-matrix, need epitaxial deposition P-type polycrystal silicon film, to form suitable PN junction structure;
Wherein, low-temperature epitaxy N-type polycrystal silicon film on P-type silicon substrate, adopt following technology to realize:
Adopt the method for heated filament CVD, source gas flow ratio: SiH
4: PH
3=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～5Pa; Underlayer temperature is 150 ℃～300 ℃; The hot-wire temperature is controlled at 1600 ℃～2000 ℃, and the distance of substrate and heated filament is controlled to be 3～8cm, and film thickness monitoring is at 10～300nm; Perhaps adopt the method for plasma assisted CVD, source gas flow ratio: SiH
4: PH
3=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～20Pa, and underlayer temperature is 150 ℃～300 ℃, and the radio frequency source power density is controlled at 0.1～2.0W/cm
2, distance is controlled at 2～4cm between substrate, and film thickness monitoring is at 10～300nm;
Wherein, low-temperature epitaxy P-type polycrystal silicon film on N-type silicon substrate, adopt following technology to realize:
Adopt the method for heated filament CVD, source gas flow ratio: SiH
4: B
2H
6=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～5Pa; Underlayer temperature is 150 ℃～300 ℃; The hot-wire temperature is controlled at 1600 ℃～2000 ℃, and the distance of substrate and heated filament is controlled at 3～8cm, and film thickness monitoring is at 10～300nm; Perhaps adopt the method for plasma assisted CVD, source gas flow ratio: SiH
4: B
2H
6=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～20Pa, and underlayer temperature is 150 ℃～300 ℃, and the radio frequency source power density is controlled at 0.1～2.0W/cm
2, distance is controlled at 2～4cm between substrate, and film thickness monitoring is at 10～300nm;
2) technology to the abrupt junction structure rapid thermal annealing modification of low-temperature epitaxy preparation is following:
Adopt N
2Perhaps Ar gas is protected and is annealed, and perhaps adopts the mode of vacuum annealing, and heating rate is greater than 20 ℃/minute, 800 ℃～1200 ℃ insulations 10 seconds～200 seconds, and fast cooling subsequently, thus make the abrupt junction structure crystal silicon solar battery of function admirable;
Being defined as of said thinner ratio: H
2Flow/(SiH
4Flow+H
2Flow+dopant gas flow).
Technique effect of the present invention is: the present invention adopts heated filament CVD or plasma assisted CVD can realize large tracts of land uniform deposition film, guarantees the uniformity of body silicon solar cell.Adopt quick thermal annealing process, can eliminate the defective in the film in the low-temperature epitaxy process, activate doped chemical, obtain the crystal silicon solar battery of function admirable abrupt junction structure guaranteeing that the abrupt junction structure does not take place under the prerequisite of obviously diffusion.
Embodiment
Below in conjunction with embodiment the present invention is done further elaboration,
For the crystal silicon battery that adopts P-type silicon chip, preparation N-type layer forms PN junction;
Embodiment one:
1. the silicon chip of handling well early stage is put into the chamber of deposit film, substrate is heated to 250 ℃, takes out base vacuum and causes 2 * 10
-4Pa.2. after underlayer temperature and vacuum degree reach requirement, adopt heated filament CVD method epitaxial deposition N-layer, concrete parameter is following: source gas flow ratio: SiH
4: PH
3=1:0.01, thinner ratio is controlled at 95%, and air pressure is controlled at 1Pa, and underlayer temperature is 250 ℃, and the hot-wire temperature is controlled at～1850 ℃, and heated filament is 5.0cm to substrate distance, and film thickness monitoring is at 200nm, being defined as of said thinner ratio: H
2Flow/(SiH
4Flow+H
2Flow+dopant gas flow).3. the slice, thin piece that will deposit after finishing is put into rapid heat-treatment furnace, and quick thermal annealing process is carried out in logical Ar gas shiled.Concrete parameter is following: 100 ℃/minute of heating rates, 1000 ℃ are incubated 20 seconds, cool off with stove then.
Embodiment two:
1, the silicon chip of handling well early stage is put into the chamber of deposit film, substrate is heated to 250 ℃, takes out base vacuum and causes 2 * 10
-4Pa.2, after underlayer temperature and vacuum degree reach requirement, adopt plasma assisted CVD method epitaxial deposition N-layer, concrete parameter is following: source gas flow ratio: SiH
4: PH
3=1:0.01, thinner ratio is controlled at 95%, and air pressure is controlled at 5Pa, and underlayer temperature is 250 ℃, and radio frequency substrate power density is controlled at 0.2W/cm
2, distance is controlled to be 2.0cm between two substrates, and film thickness monitoring is at 150nm; Being defined as of said thinner ratio: H
2Flow/(SiH
4Flow+H
2Flow+dopant gas flow).3. the slice, thin piece that will deposit after finishing is put into rapid heat-treatment furnace, and rapid thermal treatment is carried out in logical Ar gas shiled.Concrete parameter is following: 100 ℃/minute of heating rates, 1050 ℃ are incubated 10 seconds, cool off with stove then.
Claims (2)
1. the preparation method of an abrupt junction crystal silicon solar battery is characterized in that, said preparation method comprises: the 1) preparation of abrupt junction epitaxial loayer: crystal silicon battery has two kinds of P-matrix and N-matrix, for P-type silicon chip, needs epitaxial deposition N-type polycrystal silicon film; To the N-matrix, need epitaxial deposition P-type polycrystal silicon film, to form suitable PN junction structure;
Wherein, low-temperature epitaxy N-type polycrystal silicon film on P-type silicon substrate, adopt following technology to realize:
Adopt the method for heated filament CVD, source gas flow ratio: SiH
4: PH
3=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～5Pa; Underlayer temperature is 150 ℃～300 ℃; The hot-wire temperature is controlled at 1600 ℃～2000 ℃, and the distance of substrate and heated filament is controlled to be 3～8cm, and film thickness monitoring is at 10～300nm; Perhaps adopt the method for plasma assisted CVD, source gas flow ratio: SiH
4: PH
3=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～20Pa, and underlayer temperature is 150 ℃～300 ℃, and the radio frequency source power density is controlled at 0.1～2.0W/cm
2, distance is controlled at 2～4cm between substrate, and film thickness monitoring is at 10～300nm;
Wherein, low-temperature epitaxy P-type polycrystal silicon film on N-type silicon substrate, adopt following technology to realize:
Adopt the method for heated filament CVD, source gas flow ratio: SiH
4: B
2H
6=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～5Pa; Underlayer temperature is 150 ℃～300 ℃; The hot-wire temperature is controlled at 1600 ℃～2000 ℃, and the distance of substrate and heated filament is controlled at 3～8cm, and film thickness monitoring is at 10～300nm; Perhaps adopt the method for plasma assisted CVD, source gas flow ratio: SiH
4: B
2H
6=1:0.001～1:0.10, thinner ratio is controlled at 90%～98%, and air pressure is controlled at 1Pa～20Pa, and underlayer temperature is 150 ℃～300 ℃, and the radio frequency source power density is controlled at 0.1～2.0W/cm
2, distance is controlled at 2～4cm between substrate, and film thickness monitoring is at 10～300nm;
2) technology to the abrupt junction structure rapid thermal annealing modification of low-temperature epitaxy preparation is following:
Adopt N
2Perhaps Ar gas is protected and is annealed, and perhaps adopts the mode of vacuum annealing, and heating rate is greater than 20 ℃/minute, 800 ℃～1200 ℃ insulations 10 seconds～200 seconds, and fast cooling subsequently, thus make the abrupt junction structure crystal silicon solar battery of function admirable.
2. the preparation method of a kind of abrupt junction crystal silicon solar battery as claimed in claim 1 is characterized in that: being defined as of said thinner ratio: H
2Flow/(SiH
4Flow+H
2Flow+dopant gas flow).
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| CN201210183417.7A CN102694072B (en) | 2012-06-06 | 2012-06-06 | Preparation method for abrupt junction crystalline silicon solar cell |
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| CN102694072A true CN102694072A (en) | 2012-09-26 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129211A (en) * | 2019-12-05 | 2020-05-08 | 广东爱旭科技有限公司 | Method and equipment for improving carrier attenuation of PERC solar cell |
Citations (3)
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|---|---|---|---|---|
| CN101699633A (en) * | 2009-10-21 | 2010-04-28 | 南京航空航天大学 | PIN Si-based film solar battery and manufacturing method thereof |
| WO2011106624A1 (en) * | 2010-02-26 | 2011-09-01 | Alliance For Sustainable Energy, Llc | Hot wire chemical vapor deposition (hwcvd) with carbide filaments |
| CN102299206A (en) * | 2011-08-30 | 2011-12-28 | 南京航空航天大学 | Heterojunction solar cell and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101699633A (en) * | 2009-10-21 | 2010-04-28 | 南京航空航天大学 | PIN Si-based film solar battery and manufacturing method thereof |
| WO2011106624A1 (en) * | 2010-02-26 | 2011-09-01 | Alliance For Sustainable Energy, Llc | Hot wire chemical vapor deposition (hwcvd) with carbide filaments |
| CN102299206A (en) * | 2011-08-30 | 2011-12-28 | 南京航空航天大学 | Heterojunction solar cell and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| A.H. MAHAN等: "Rapid Thermal Annealing of HWCVD a-Si:H Films: The Effect of the Film Hydrogen Content on the Crystallization Kinetics, Surface Morphology, and Grain Growth", 《2005 DOE SOLAR ENERGY TECHNOLOGIES PROGRAM REVIEW MEETING》 * |
| 黄海宾: "热丝CVD法制备硅基薄膜材料及相关太阳电池模拟研究", 《中国博士学位论文全文数据库（电子期刊），工程科技II辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111129211A (en) * | 2019-12-05 | 2020-05-08 | 广东爱旭科技有限公司 | Method and equipment for improving carrier attenuation of PERC solar cell |
| CN111129211B (en) * | 2019-12-05 | 2021-11-16 | 广东爱旭科技有限公司 | Method and equipment for improving carrier attenuation of PERC solar cell |
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