CN102544234B - A kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer - Google Patents
A kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer Download PDFInfo
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- CN102544234B CN102544234B CN201210042844.3A CN201210042844A CN102544234B CN 102544234 B CN102544234 B CN 102544234B CN 201210042844 A CN201210042844 A CN 201210042844A CN 102544234 B CN102544234 B CN 102544234B
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Abstract
The present invention relates to a kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer, comprise: adopt PECVD method or filament CVD to prepare heterojunction crystal silicon solar battery passivation layer film, with the hydrogen atmosphere containing hydrogen plasma produced in PECVD method, in 200 ~ 300 DEG C, 1min ~ 60min are processed to the silicon chip of passivation layer; Or with the hydrogen atmosphere of the hydrogen atoms of filament CVD generation, in 200 ~ 300 DEG C, 1min ~ 60min are processed to the silicon chip of passivation layer.The present invention can improve the passivation effect of passivation layer to silicon chip surface, thus improve the conversion efficiency of solar cell, and and compared to the inert gas atmosphere of routine, hydrogen atmosphere or vacuum heat treatment process, can shortening heat treatment process time greatly, enhance productivity, have a good application prospect.
Description
Technical field
The invention belongs to the reprocessing field of solar cell passivation layer, particularly a kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer.
Background technology
Solar-energy photo-voltaic cell is one of the most promising current renewable energy utilization mode.Wherein crystal silicon solar battery is due to its aboundresources, and technical maturity advantages of higher occupies and by the leading position of occuping market for a long time.In all kinds of crystal silicon solar battery technology developed at present, the silicon/crystalline silicon heterojunction solar cell that the HIT battery produced with Japanese Sanyo company is representative gets more and more people's extensive concerning with advantages such as the technology maturities of its high conversion efficiency, suitable scale of mass production.
People generally believe, the passivation effect of crystal silicon chip surface passivation layer to silicon chip surface is the key point determining silicon/crystalline silicon heterojunction solar cell performance.The conversion efficiency of the HIT battery of Sanyo company reaches 23.0%.At present, the material as this passivation layer mainly contains the a-Si:H film that adopts PECVD method or filament CVD to prepare or the standby a-SiOx:H film of PECVD legal system, all obtains good passivation effect.For Fz silicon, after transpassivation, minority carrier life time can reach ms magnitude.But it is found that, after preparing passivation layer, heat-treat at 200 ~ 300 DEG C under carrying out Ar gas atmosphere, hydrogen atmosphere or vacuum condition, the passivation effect of passivation layer to silicon chip surface can be improved further.Wherein hydrogen atmosphere is optimum.After heat treatment, the minority carrier life time of Fz silicon can reach 5 ~ 6ms.The passivation effect of a-Si:H or a-SiOx:H comes from the structure of the si-h bond that film and silicon chip surface are formed, and heat-treats, changes the structure of si-h bond in film, thus improve its passivation effect under suitable temperature and atmosphere.But this heat treatment process required time is longer, need several hours even longer, this point is unfavorable for large batch of suitability for industrialized production.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer, the method can improve the passivation effect of passivation layer to silicon chip surface, thus improve the conversion efficiency of solar cell, and compared to the inert gas atmosphere of routine, hydrogen atmosphere or vacuum heat treatment process, can shortening heat treatment process time greatly, enhance productivity.
The heat treatment method of a kind of heterojunction crystal silicon solar battery passivation layer of the present invention, comprising:
Adopt PECVD method or filament CVD to prepare heterojunction crystal silicon solar battery passivation layer film, with the hydrogen atmosphere containing hydrogen plasma produced in PECVD method, in 200 ~ 300 DEG C, 1min ~ 60min are processed to the silicon chip of passivation layer; Or with the hydrogen atmosphere of the hydrogen atoms of filament CVD generation, in 200 ~ 300 DEG C, 1min ~ 60min are processed to the silicon chip of passivation layer.
Described passivation layer film is thicker than silicon/crystalline silicon heterojunction solar cell device architecture desired thickness.
Describedly with what produce in PECVD method containing the technological parameter of hydrogen atmosphere to the silicon chip process of passivation layer of hydrogen plasma be: on pole plate, added radio frequency power density is for 0.01 ~ 1.2W/cm
2, air pressure is 5 ~ 100Pa.
The described technological parameter of hydrogen atmosphere to the silicon chip process of passivation layer with the hydrogen atoms of filament CVD generation is: the temperature of heated filament is 1500 ~ 2200 DEG C, and air pressure is 0.1 ~ 50Pa.
Beneficial effect
The present invention adopts the active hydrogen atmosphere of high energy to heat-treat possessing the silicon chip for silicon/crystalline silicon heterojunction solar cell of a-Si:H or a-SiOx:H as passivation layer, the passivation effect of passivation layer to silicon chip surface can be improved, thus improve the conversion efficiency of solar cell, and compared to the inert gas atmosphere of routine, hydrogen atmosphere or vacuum heat treatment process, can shortening heat treatment process time greatly, enhance productivity, have a good application prospect.
Embodiment
Below in conjunction with specific embodiment, set forth the present invention further.Should be understood that these embodiments are only not used in for illustration of the present invention to limit the scope of the invention.In addition should be understood that those skilled in the art can make various changes or modifications the present invention, and these equivalent form of values fall within the application's appended claims limited range equally after the content of having read the present invention's instruction.
Embodiment 1
Respectively prepare the a-Si:H of one deck 25nm as passivation layer using PECVD method in the N-type silicon both side surface of cleaning, the minority carrier life time after passivation is 320 μ s.
Heat-treat the silicon chip that deposited passivation layer with the high energy active hydrogen plasma that PECVD method produces, concrete technology parameter is as follows: the radio frequency source activated plasma adopting 13.56MHz, and on pole plate, added radio frequency power density is 0.08W/cm
2, air pressure 25Pa, silicon chip is heated to 280 DEG C, time 30min.
After heat treatment, minority carrier life time reaches 600 μ s, and the reduced thickness of passivation layer has arrived 15nm.As adopted normative heat treatment, heat treatment time needs about 120min.
Embodiment 2
Respectively prepare the a-Si:H of one deck 20nm as passivation layer using filament CVD in the N-type silicon both side surface of cleaning, the minority carrier life time after passivation is 350 μ s.
Heat-treat the silicon chip that deposited passivation layer with the high energy active hydrogen atom atmosphere that filament CVD produces, concrete technology parameter is as follows: adopt tungsten filament as heated filament, hot-wire temperature is heated to 1800 DEG C, air pressure 10Pa, and silicon chip is heated to 220 DEG C, time 25min.
After heat treatment, minority carrier life time reaches 680 μ s, and passivation layer thickness has been thinned to 12nm.As adopted normative heat treatment, heat treatment time needs about 120min.
Embodiment 3
Respectively prepare the a-Si:H of one deck 25nm as passivation layer using PECVD method in the N-type silicon both side surface of cleaning, the minority carrier life time after passivation is 320 μ s.
Heat-treat the silicon chip that deposited passivation layer with the high energy active hydrogen plasma that PECVD method produces, concrete technology parameter is as follows: the radio frequency source activated plasma adopting 13.56MHz, and on pole plate, added radio frequency power density is 0.8W/cm
2, air pressure 75Pa, silicon chip is heated to 260 DEG C, time 40min.
After heat treatment, minority carrier life time reaches 580 μ s, and the reduced thickness of passivation layer has arrived 14nm.As adopted normative heat treatment, heat treatment time needs about 120min.
Embodiment 4
Respectively prepare the a-Si:H of one deck 20nm as passivation layer using filament CVD in the N-type silicon both side surface of cleaning, the minority carrier life time after passivation is 350 μ s.
Heat-treat the silicon chip that deposited passivation layer with the high energy active hydrogen atom atmosphere that filament CVD produces, concrete technology parameter is as follows: adopt tungsten filament as heated filament, hot-wire temperature is heated to 2100 DEG C, air pressure 30Pa, and silicon chip is heated to 210 DEG C, time 10min.
After heat treatment, minority carrier life time reaches 670 μ s, and passivation layer thickness has been thinned to 15nm.As adopted normative heat treatment, heat treatment time needs about 120min.
Claims (1)
1. a heat treatment method for heterojunction crystal silicon solar battery passivation layer, comprising:
Heat-treat the silicon chip that deposited passivation layer with the high energy active hydrogen atom atmosphere that filament CVD produces, concrete technology parameter is as follows: adopt tungsten filament as heated filament, hot-wire temperature is heated to 1800 DEG C, air pressure 10Pa, and silicon chip is heated to 220 DEG C, time 25min.
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| CN107845702A (en) * | 2017-12-04 | 2018-03-27 | 浙江晶科能源有限公司 | The passivation layer processing method and crystal silicon solar batteries of a kind of crystalline silicon wafer |
| CN108417482A (en) * | 2018-03-23 | 2018-08-17 | 浙江师范大学 | The preparation method of ultra-thin silicon dioxide passivation layer |
| CN109449257B (en) * | 2018-05-04 | 2021-01-19 | 中国科学院上海微***与信息技术研究所 | Post-hydrogenation treatment method for amorphous film and preparation method for silicon heterojunction solar cell |
| CN111952414B (en) * | 2020-08-21 | 2023-02-28 | 晶科绿能(上海)管理有限公司 | Post-cutting passivation method of silicon-based semiconductor device and silicon-based semiconductor device |
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| CN101235492A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Chemical annealing method for making amorphous silicon battery more stable |
| CN101834221B (en) * | 2009-03-13 | 2012-08-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of absorption layer of thin film solar cell |
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Non-Patent Citations (2)
| Title |
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| Hydrogen plasma treatment for improving bulk passivation quality of c-Si solar cells;S. Rattanapan,et al;《Current Applied Physics》;20091111;第10卷(第2期);正文第S215-S217页 * |
| 纳米硅/晶体硅异质结电池的暗I-V特性和输运机制;刘丰珍，等;《半导体学报》;20080331;第29卷(第3期);正文第549-553页 * |
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Effective date of registration: 20160812 Address after: 225400 Jiangsu city of Taizhou Province Branch Road, Taixing city high tech Industrial Park on the west side Patentee after: China wisdom (Taixing) Power Technology Co., Ltd. Address before: 201108 Shanghai, Minhang District Jin Road, room 4299, No. 208 Patentee before: Shanghai CIIC Optical Fiber Communication Co., Ltd. |