CN102637771A - Method for manufacturing no-dead-layer emitter of solar cell - Google Patents
Method for manufacturing no-dead-layer emitter of solar cell Download PDFInfo
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- CN102637771A CN102637771A CN2012100838965A CN201210083896A CN102637771A CN 102637771 A CN102637771 A CN 102637771A CN 2012100838965 A CN2012100838965 A CN 2012100838965A CN 201210083896 A CN201210083896 A CN 201210083896A CN 102637771 A CN102637771 A CN 102637771A
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Abstract
The invention belongs to the technical field of manufacture of crystalline silicon solar cells and particularly relates to a method for manufacturing a no-dead-layer emitter of a solar cell. The method includes: preparing the emitter by a conventional diffusion method, preparing the no-dead-layer emitter excellent in performance by the aid of a method of printing corrosive size on the surface of a silicon wafer and a method of corroding a dead-layer emitter area with high doping density. By the method for manufacturing the no-dead-layer emitter of the solar cell, the dead-layer emitter area on the surface of the solar cell can be removed effectively, short-wave response of the solar cell is improved, dark current is reduced, open-circuit voltage of the solar cell can be improved effectively, and industrialized production is easy to realize.
Description
Technical field
The invention belongs to the manufacture technology field of crystal-silicon solar cell, be specifically related to the manufacture method that a kind of solar cell does not have the dead layer emitter.
Background technology
Along with the exhaustion of fossil energy, solar cell is developed as a kind of green energy resource fast.Crystal-silicon solar cell becomes the main flow in present solar cell field, how to reduce the cost of solar cell, and the efficient that improves solar cell becomes the emphasis of domestic and international crystal-silicon solar cell research.
Emitter is as the key components of solar cell, and its surface doping concentration directly influences the efficient of solar cell.Because the doping content of working as the surface emitting utmost point is greater than 10
20/ cm
3The time, will become the dead layer district, therefore, through reducing the doping content of emitter surface, improve of the response of battery sheet, and reduce dark current short-wave band, improve open circuit voltage, become the main method of present raising battery efficiency.Yet the preparation of traditional emitter, the doping content of silicon chip surface all is higher than 10
20/ cm
3, therefore the surface can form the dead layer district of tens nanometers, influences the efficient of battery.
Summary of the invention
The object of the invention is exactly the defective to above-mentioned existence, the manufacture method that provides a kind of solar cell not have the dead layer emitter, and conventional diffusion is adopted in this invention earlier; Then at silicon chip surface printing corrosivity slurry; The method that the dead layer emitter region that doping content is higher erodes, preparation has the no dead layer emitter of premium properties, and the present invention can remove the dead layer emitter region on battery sheet surface effectively; Improve the short wave response of solar cell; Reduce dark current, effectively improve the open circuit voltage of battery sheet, and be easy to suitability for industrialized production.
Technical scheme of the present invention is the manufacture method that a kind of solar cell does not have the dead layer emitter, it is characterized in that may further comprise the steps:
(1) with the silicon chip after the making herbs into wool, put into diffusion furnace, spreading the preparation junction depth is 150-500nm emitter, and side's resistance is 20-80ohm/sq;
(2) will accomplish the silicon chip of diffusion, printing corrosivity slurry, wherein the corrosivity slurry is the slurry of Merck, the monolithic seal heavily is 0.02-1.5g.。
The silicon chip that (3) will be printed with the corrosivity slurry is put into sintering furnace oven dry and corrosion of silicon, and the sintering furnace temperature is 150-500 ℃, and the time is 1-30min.
(4) silicon chip being put into concentration is 5%-10% HF acid solution, ultrasonic waves for cleaning 1-60min, and the side's of obtaining resistance is the no dead layer emitter of 50-150ohm/sq.
The doping content of the no dead layer emitter surface of this invention is lower than 10
20/ cm
3
Silicon chip of the present invention is P type polycrystalline, type monocrystalline or monocrystalline silicon, also can be polycrystalline, type monocrystalline or the monocrystalline silicon of N type.
Beneficial effect of the present invention is: a kind of solar cell of the present invention does not have the manufacture method of dead layer emitter, adopts conventional diffusion earlier, then at silicon chip surface printing corrosivity slurry; The method that the dead layer emitter region that doping content is higher erodes, preparation has the no dead layer emitter of premium properties, and its operation comprises; The preparation of conventional diffusion emitter; The printing of corrosivity slurry, the sintering etching contains doped source silex glass and highly doped dead layer emitter region, cleans.The present invention can be widely used in various polycrystalline, type monocrystalline or monocrystalline silicon; Can remove the dead layer emitter region on battery sheet surface effectively, improve the short wave response of solar cell, reduce dark current; Effectively improve the open circuit voltage of battery sheet, and be easy to suitability for industrialized production.
Description of drawings:
Shown in Figure 1 is crystalline silicon conventional diffusion structural representation;
Shown in Figure 2 is no dead layer emitter structure sketch map of the present invention;
Among the figure, 1. diffuse source atom 2. contains the silex glass of doped source, and 3. the dead layer emitter does not 4. have the dead layer emitter, 5. silicon chip.
Embodiment:
In order to understand the present invention better, specify technical scheme of the present invention below in conjunction with accompanying drawing, but the present invention is not limited thereto.
The present invention is the manufacture method that a kind of crystal-silicon solar cell does not have the dead layer emitter; Technical scheme is to comprise following processing step: the preparation of conventional diffusion emitter, the printing of corrosivity slurry; The sintering etching contains doped source silex glass 2 and highly doped dead layer emitter 3 districts, cleans.
(1) with the silicon chip after the making herbs into wool 5, put into diffusion furnace, spreading the preparation junction depth is the emitter of 150-500nm, and side's resistance is 20-80ohm/sq;
(2) will accomplish the silicon chip 5 of diffusion, printing corrosivity slurry, wherein the corrosivity slurry is the Merck slurry, the monolithic seal heavily is 0.02-1.5g.。
The silicon chip 5 that (3) will be printed with the corrosivity slurry is put into sintering furnace oven dry and corrosion of silicon 5, and the sintering furnace temperature is 150-500 ℃, and the time is 1-30min.
(4) silicon chip 5 being put into concentration is 5%-10% HF acid solution, ultrasonic waves for cleaning 1-60min, and the side's of obtaining resistance is the no dead layer emitter 4 of 50-150ohm/sq.
The doping content of the emitter surface of this invention is lower than 10
20/ cm
3
Silicon chip of the present invention is P type polycrystalline, type monocrystalline or monocrystalline, also can be polycrystalline, type monocrystalline or the monocrystalline of N type.
Embodiment 1
With the p type single crystal silicon sheet 5 after the making herbs into wool cleaning, to put into tubular diffusion furnace and spread, diffuse source atom 1 gets into silicon chip 5, forms the higher emitter of surface doping concentration, and side's resistance is 30ohm/sq; On silicon chip 5, print Merck slurry 0.1g then; The silicon chip that is printed with the corrosivity slurry 5 is put into sintering furnace, and temperature is set at 300 ℃, and the time is 3min, and the silex glass 2 and the highly doped dead layer emitter 3 that will contain doped source erode; Again silicon chip 5 is put into 5% HF solution and clean 60min, remove silicon chip 5 surface residues, the side of obtaining resistance is a 60ohm/sq emitter 4; Cleaned silicon chip 5 is carried out etching again, the coated with antireflection film, printing, technologies such as sintering obtain solar cell piece, and its average light photoelectric transformation efficiency can reach 18.35%.
Embodiment 2
With the P type polysilicon chip 5 after the making herbs into wool cleaning, to put into tubular diffusion furnace and spread, diffuse source atom 1 gets into silicon chip 5, forms the higher emitter of surface doping concentration, and side's resistance is 35ohm/sq; On silicon chip 5, print Merck slurry 0.1g then; The silicon chip that is printed with the corrosivity slurry 5 is put into sintering furnace, and temperature is set at 300 ℃, and the time is 2.5min, and the silex glass 2 and the highly doped dead layer emitter 3 that will contain doped source erode; Again silicon chip 5 is put into 5% HF solution and clean 60min, remove silicon chip 5 surface residues, the side of obtaining resistance is the 65ohm/sq emitter; Cleaned silicon chip 5 is carried out etching again, the coated with antireflection film, printing, technologies such as sintering obtain solar cell piece, and its average light photoelectric transformation efficiency can reach 17.16%.
Claims (4)
1. a solar cell does not have the manufacture method of dead layer emitter, it is characterized in that may further comprise the steps:
(1) with the silicon chip after the making herbs into wool, put into diffusion furnace, spreading the preparation junction depth is the emitter of 150-500nm, and side's resistance is 20-80ohm/sq;
(2) will accomplish the silicon chip of diffusion, printing corrosivity slurry;
The silicon chip that (3) will be printed with the corrosivity slurry is put into sintering furnace oven dry and corrosion of silicon;
(4) silicon chip being put into concentration is 5%-10% HF acid solution, and ultrasonic waves for cleaning 1-60min obtains not having the dead layer emitter.
2. solar cell according to claim 1 does not have the manufacture method of dead layer emitter, it is characterized in that, the corrosivity slurry is the Merck slurry in the step (2).
3. solar cell according to claim 1 does not have the manufacture method of dead layer emitter, it is characterized in that, corrosivity slurry monolithic seal heavily is 0.02-1.5g in the step (2).
4. solar cell according to claim 1 does not have the manufacture method of dead layer emitter, it is characterized in that, in the step (3), the sintering furnace temperature is 150-500 ℃, and the time is 1-30min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100838965A CN102637771A (en) | 2012-03-27 | 2012-03-27 | Method for manufacturing no-dead-layer emitter of solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100838965A CN102637771A (en) | 2012-03-27 | 2012-03-27 | Method for manufacturing no-dead-layer emitter of solar cell |
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| CN102637771A true CN102637771A (en) | 2012-08-15 |
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| CN2012100838965A Pending CN102637771A (en) | 2012-03-27 | 2012-03-27 | Method for manufacturing no-dead-layer emitter of solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090017606A1 (en) * | 2006-01-23 | 2009-01-15 | Gp Solar Gmbh | Method for Producing a Semiconductor Component Having Regions Which are Doped to Different Extents |
| CN101794844A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for realizing selective emitter of solar battery |
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
-
2012
- 2012-03-27 CN CN2012100838965A patent/CN102637771A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090017606A1 (en) * | 2006-01-23 | 2009-01-15 | Gp Solar Gmbh | Method for Producing a Semiconductor Component Having Regions Which are Doped to Different Extents |
| CN101794844A (en) * | 2010-03-15 | 2010-08-04 | 常州天合光能有限公司 | Method for realizing selective emitter of solar battery |
| CN101872808A (en) * | 2010-06-04 | 2010-10-27 | 珈伟太阳能(武汉)有限公司 | Manufacturing method of selective emitter of crystalline silicon solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104064630A (en) * | 2014-07-15 | 2014-09-24 | 苏州阿特斯阳光电力科技有限公司 | Method for preparing N type IBC solar battery piece |
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Application publication date: 20120815 |