CN106328736A - Anti-LID black silicon solar high-efficiency cell and production method thereof - Google Patents
Anti-LID black silicon solar high-efficiency cell and production method thereof Download PDFInfo
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- CN106328736A CN106328736A CN201510330355.1A CN201510330355A CN106328736A CN 106328736 A CN106328736 A CN 106328736A CN 201510330355 A CN201510330355 A CN 201510330355A CN 106328736 A CN106328736 A CN 106328736A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 238000009792 diffusion process Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 19
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 31
- 239000010408 film Substances 0.000 claims description 16
- 239000002061 nanopillar Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000009966 trimming Methods 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000006396 nitration reaction Methods 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000012895 dilution Substances 0.000 claims description 3
- 238000010790 dilution Methods 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000377 silicon dioxide Substances 0.000 abstract description 10
- 229910052681 coesite Inorganic materials 0.000 abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000005360 phosphosilicate glass Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 235000008216 herbs Nutrition 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 210000002268 wool Anatomy 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to an anti-LID black silicon solar high-efficiency cell and a production method thereof. The anti-LID black silicon solar high-efficiency cell comprises a positive electrode, a negative electrode, an aluminum back surface field, a P-type silicon wafer substrate, and a PN junction, an SiO2 oxide film and an SiNx film located on the P-type silicon wafer substrate sequentially, wherein the thickness of the PN junction is uniform; and the SiNx film coats the surface of the SiO2 oxide film. Through high-light trapping nano column making, first-time diffusion, edge and phosphosilicate glass removal, second-time diffusion, SiNx surface passivation, anti-reflection film deposition, and cell negative electrode and positive electrode and aluminum back surface field making sequentially, the anti-LID black silicon solar cell is made. Thus, the light energy absorption is enhanced, the photoelectric conversion efficiency is improved, the leakage phenomenon of the cell is reduced, and the anti-LID and PID effects are realized.
Description
Technical field
The present invention relates to area of solar cell, specifically disclose a kind of anti-LID black silicon solar high-efficiency battery and production method thereof.
Background technology
Silicon is one of element that reserves are the abundantest in the world, is widely used in the key areas such as photodetection, optic communication, microelectronic device.But the character of itself due to crystalline silicon so that surface of crystalline silicon is the highest to the reflection of visible-infrared light, significantly limit the key technical index such as the sensitivity of silicon-based photoelectric device, available band scope and conversion efficiency.In recent years, a kind of micro structure silicon being black silicon causes people and pays close attention to greatly, and black silicon owing to there being its high absorption to the light of visible-infrared band, can be widely applied to biology, infrared acquisition, solaode, the aspects such as pharmacy, microelectronics, agricultural and safety detection.Conventional crystal-silicon solar cell is all based on what p type boron-doped silicon crystal manufactured, but this battery also exists optical attenuation phenomenon, and this phenomenon has become as an important bottleneck of restriction efficient solar battery development.Character and the mechanism of optical attenuation phenomenon is not also fully apparent from present, and it is one of study hotspot of current crystal-silicon solar cell material and device direction in the world.Light decay problem can be solved by the method for defect generations-boron oxygen complex of suppression optical attenuation, suppresses the method for boron oxygen complex to include 1. reducing oxygen content and 2. reduces boron concentration 3. p-type and mix gallium silicon crystal (gallium replacement boron) 4. n-type silicon crystal (not boracic) 5. high-temperature heat treatment doping the most of the same clan (germanium, stannum and carbon) silicon crystal.
The method preparing black silicon at present is varied, and most two kinds of methods of industrialization are dry method making herbs into wool RIE(Reactive Ion Etching) and wet-method etching MCCE (Met aluminum Catalyzed Chemic aluminum Etching).Use RIE method or MCCE method to prepare black silicon nanometer to fall into light pretty young woman's ocular structure and can significantly improve the spectral absorption of visible-infrared band, but due to the increase of surface area and the defect of introducing in black silicon preparation process, there is higher recombination-rate surface and relatively low minority carrier lifetime, cause open-circuit voltage to decline, electric leakage increases, and the photoelectric transformation efficiency of solaode does not increases significantly.Black silicon nanometer falls into light pretty young woman's ocular structure makes the PN junction depth of formation uneven, and at PN junction shallow junction, boron and oxygen majority are in metastable state, easily forms boron oxygen complex, causes illumination decay (LID) phenomenon more serious., easily burning at PN junction shallow junction, the leaky causing solaode is more serious meanwhile.
Summary of the invention
It is an object of the invention to: provide one to strengthen light energy absorption for solving problem above, improve photoelectric transformation efficiency, reduce battery drain phenomenon, there is anti-LID black silicon solar high-efficiency battery and the production method thereof of anti-LID and PID effect.
The technical solution adopted in the present invention is such that
A kind of anti-LID black silicon solar high-efficiency battery, including positive and negative electrode and aluminum back surface field, also includes p-type silicon chip substrate and the PN junction being sequentially located in p-type silicon chip substrate, SiO2Oxide-film, SiNx thin film, described PN junction thickness is uniform, and described SiNx film coated is at SiO2Oxide-film surface
Further, described p-type silicon chip substrate one end is smooth, and the other end is light trapping structure, is PN junction at its light trapping structure end end face；Outside described PN junction, p-type silicon chip substrate light trapping structure end outer layer be SiO2Oxide-film；Described SiNx thin film one end is smooth, and the other end and described p-type silicon chip substrate light trapping structure end form the setting that coincide.
Further, described p-type silicon chip substrate purity is more than 99.9999%.
Further, described PN junction is 0.1 ~ 10 μm deeply.
Further, described SiNx film thickness is 50 ~ 150nm.
The production method of above-mentioned a kind of anti-LID black silicon solar high-efficiency battery, comprises the steps:
(1) making of high light trapping nano-pillar, carries out RIE method to P-type silicon sheet or MCCE method processes preparation high light trapping nano-pillar；
(2) diffusion for the first time, is placed in silicon chip in diffusion furnace, at protective gas N2、O2Use under atmosphere and be passed through phosphorus source technique and be diffused；
(3) flash trimming knot and phosphorosilicate glass layer are removed；
(4) second time diffusion, in diffusion furnace, utilizes O2As diffusion source, at protective gas N2It is diffused under atmosphere；
(5) utilize PEVCD equipment that silicon chip carries out SiNx surface passivation and anti-reflection thin film deposition；
(6) prepare battery negative electrodes, anelectrode and aluminum back surface field, complete anti-LID black silicon solar cell and prepare.
Further, in described step (2), gas diffusion temperature is 810 ~ 860 DEG C.
Further, using wet-etching technology to remove flash trimming knot and phosphorosilicate glass layer, sequentially pass through through nitration mixture etching groove, polished backside, the Fluohydric acid. of dilution, deionized water cleaning treatment in described step (3), wherein acid strength and concentration of lye keep constant.
Further, in described step (4), gas diffusion temperature is 600 ~ 800 DEG C.
In sum, owing to using technique scheme, the invention has the beneficial effects as follows:
1, utilize RIE method or MCCE method to form black silicon nanometer and fall into light pretty young woman's ocular structure, due to unique anti-reflection effect of ultralow nanometer antireflection structure array, add the absorption of luminous energy, be conducive to improving the transformation efficiency of nano-pillar battery；
2, by twice diffusion, first falls into light pretty young woman's ocular structure due to black silicon nanometer, promotes phosphorus redistribution to form uniform PN junction surface by diffusion again, effectively prevents the most shallow illumination decay caused of high light trapping structure female PN junction, has anti-LID effect；Second, improve the ohmic contact characteristic of nano-pillar and electrode, improve black silicon nanometer and fall into the problem of light pretty young woman's ocular structure and electrode contact, reduce the leaky of solaode；3rd, obtain silicon chip surface doping content low, surface recombination is little, improves the open-circuit voltage of solaode, thus significantly improves the photoelectric transformation efficiency of solaode；4th, form silicon dioxide oxide passivation layer film on phosphorus-diffused layer surface, there is anti-PID effect.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Labelling in figure: 1, anelectrode；2, negative electrode；3, aluminum back surface field；4, p-type silicon chip substrate；5, PN junction；6、SiO2Oxide-film；7, SiNx thin film.
Detailed description of the invention
All features disclosed in this specification, or disclosed all methods or during step, in addition to mutually exclusive feature and/or step, all can combine by any way.
Any feature disclosed in this specification (including any accessory claim, summary and accompanying drawing), unless specifically stated otherwise, all can be by other equivalences or there is the alternative features of similar purpose replaced.I.e., unless specifically stated otherwise, an example during each feature is a series of equivalence or similar characteristics.
As it is shown in figure 1, a kind of anti-LID black silicon solar high-efficiency battery, including positive and negative electrode 1,2 and aluminum back surface field 3, also include p-type silicon chip substrate 4 and the PN junction 5 being sequentially located in p-type silicon chip substrate 4, SiO2Oxide-film 6, SiNx thin film 7, described p-type silicon chip substrate 4 one end is smooth, and the other end is light trapping structure, is PN junction 5 at its light trapping structure end end face, and PN junction 5 surface is uniform, and the degree of depth is 0.1 ~ 1.0 micron；Outside described PN junction 5, p-type silicon chip substrate 4 light trapping structure end outer layer be SiO2Oxide-film 6, has anti-LID effect；Described SiNx thin film 7 one end is smooth, and the other end and described p-type silicon chip substrate 4 light trapping structure end form the setting that coincide.Described SiNx thin film 7 thickness is 50～150nm.
The production method of above-mentioned a kind of anti-LID black silicon solar high-efficiency battery, comprises the steps:
(1) making of high light trapping nano-pillar, described p-type silicon chip substrate 4 is more than the solar level silicon substrate of 99.9999% for purity, and P type adulterates.MCCE(metal catalytic chemical attack) method prepares high light trapping nano-pillar, it is to add nano-metal particle catalyst when corrosion, through nitration mixture corrosion treatmentCorrosion Science, alkali expanding treatment, hydrofluoric acid treatment and deionized water cleaning process, acid strength and concentration of lye keep constant therebetween.RIE(plasma making herbs into wool) method prepares high light trapping nano-pillar, it is in vacuum environment, be passed through plasma making herbs into wool desired gas, then on silicon chip, apply back bias voltage, silicon chip is directly immersed in plasma, form sunken light nanostructured at silicon chip surface, finally sunken light nanostructured being gone damages layer and processes；Making herbs into wool processed after silicon chip average reflectance 5%～15%.
(2) diffusion for the first time, carries out phosphorus diffusion process for the first time to above-mentioned silicon chip, and phosphorus diffusion process is traditional diffusion technique, and including pre-deposition, again progradation, phosphorus is diffused as utilizing POCl3As phosphorous diffusion source, at protective gas N2、O2Use under atmosphere and be passed through phosphorus source technique and be diffused.Gas diffusion temperature 810 DEG C～860 DEG C.Each gas flux scope is as follows: little N2: 0～1.8slm；N2: 2～20slm；O2: 0～1.1slm.Square resistance after diffusion is 50 ~ 150 ohm, and PN junction 5 is 0.1 ~ 1.0 micron deeply.
(3) flash trimming knot and phosphorosilicate glass layer are removed；Utilize wet-etching technology, through nitration mixture etching groove, silicon chip is carried out trimming process, remove the part of the edge shorting being likely to result in diffusion process, silicon chip back side is polished simultaneously, then by the hydrofluoric acid treatment of dilution, removes the phosphorosilicate glass layer that diffusion produces.Finally clean with deionized water.Acid strength and concentration of lye keep constant therebetween.
(4) second time diffusion, big in order to settlement steps to deal (1) processes, by RIE method or MCCE method, the nano-pillar depth of groove prepared, diffusion process protrusions part junction depth, the PN junction non-uniform phenomenon that groove knot is shallow, need to carry out secondary diffusion.Secondary diffusion is phosphorus redistribution and the process of oxide layer generation, and the one side spread at silicon chip carries out oxygen diffusion.Utilize O2As diffusion source, at protective gas N2 It is diffused under atmosphere, forms silicon dioxide oxide passivation layer film on phosphorus-diffused layer surface.Secondary diffusion temperature 650 DEG C～800 DEG C is lower than One Diffusion Process temperature.
(5) silicon chip carrying out SiNx surface passivation and anti-reflection thin film deposition, silicon chip carries out SiNx surface passivation and anti-reflection thin film deposition, is to utilize PEVCD equipment, the diffusingsurface at silicon chip deposits layer of sin x thin film 7, and film thickness is 50～150nm.PEVCD completes back reflection rate 0～15%.
(6) prepare battery negative electrodes, anelectrode and aluminum back surface field, complete anti-LID black silicon solar cell and prepare.
Above-described embodiment, simply to illustrate that the technology design of the present invention and feature, its objective is to be to allow one of ordinary skilled in the art will appreciate that present disclosure and to implement according to this, can not limit the scope of the invention with this；Every change according to the equivalence done by the essence of present invention or modification, all should contain within the scope of the present invention.
Claims (9)
1.A kind of anti- LID Black silicon solar high-efficiency battery, including positive and negative electrode and aluminum back surface field, it is characterised in that: also include P Type silicon chip substrate and being sequentially located at P In type silicon chip substrate PN Knot, SiO 2 Oxide-film, SiNx Thin film, described PN Knot thickness is uniform, described SiNx Film coated exists SiO 2 Oxide-film surface.
2.According to claim 1 Described one resists LID Black silicon solar high-efficiency battery, it is characterised in that: described P Type silicon chip substrate one end is smooth, and the other end is light trapping structure, at its light trapping structure end end face is PN Knot；Described PN Outside knot, P Type silicon chip substrate light trapping structure end outer layer is SiO 2 Oxide-film；Described SiNx Thin film one end is smooth, and the other end is with described P Type silicon chip substrate light trapping structure end forms the setting that coincide.
3.According to claim 1 Or 2 Described one resists LID Black silicon solar high-efficiency battery, it is characterised in that: described P Type silicon chip substrate purity is more than 99.9999% 。
4.According to claim 1 Or 2 Described one resists LID Black silicon solar high-efficiency battery, it is characterised in that: described PN Junction depth is 0.1~10 μ m 。
5.According to claim 1 Or 2 Described one resists LID Black silicon solar high-efficiency battery, it is characterised in that: described SiNx Film thickness is 50~150nm 。
6.A kind of such as claim 1 Described is anti- LID The production method of black silicon solar high-efficiency battery, it is characterised in that: comprise the steps:
(
1
) making of high light trapping nano-pillar, right
P
Type silicon chip is carried out
RIE
Method or
MCCE
Method processes preparation high light trapping nano-pillar；
(
2
) diffusion for the first time, silicon chip is placed in diffusion furnace, at protective gas
N
2
、
O
2
Use under atmosphere and be passed through phosphorus source technique and be diffused；
(
3
) remove flash trimming knot and phosphorosilicate glass layer；
(
4
) second time diffusion, in diffusion furnace, utilize
O
2
As diffusion source, at protective gas
N
2
It is diffused under atmosphere；
(
5
) utilize
PEVCD
Silicon chip is carried out by equipment
SiNx
Surface passivation and anti-reflection thin film deposition；
(
6
) prepare battery negative electrodes, anelectrode and aluminum back surface field, complete to resist
LID
Prepared by black silicon solar cell.
7.According to claim 6 Described one resists LID Black silicon solar high-efficiency battery, it is characterised in that: described step ( 2 In), gas diffusion temperature is 810~860 ℃。
8.According to claim 6 Described one resists LID Black silicon solar high-efficiency battery, it is characterised in that: described step ( 3 Using wet-etching technology to remove flash trimming knot and phosphorosilicate glass layer in), sequentially pass through through nitration mixture etching groove, polished backside, the Fluohydric acid. of dilution, deionized water cleaning treatment, wherein acid strength and concentration of lye keep constant.
9.According to claim 6 Described one resists LID Black silicon solar high-efficiency battery, it is characterised in that: described step ( 4 In), gas diffusion temperature is 600~800 ℃。
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| CN201510330355.1A CN106328736B (en) | 2015-06-16 | 2015-06-16 | A kind of anti-LID black silicon solars high-efficiency battery and its production method |
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| CN201510330355.1A CN106328736B (en) | 2015-06-16 | 2015-06-16 | A kind of anti-LID black silicon solars high-efficiency battery and its production method |
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| Publication Number | Publication Date |
|---|---|
| CN106328736A true CN106328736A (en) | 2017-01-11 |
| CN106328736B CN106328736B (en) | 2018-05-04 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393976A (en) * | 2017-08-02 | 2017-11-24 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN108493270A (en) * | 2018-03-14 | 2018-09-04 | 江西比太科技有限公司 | A kind of alkali cleaning dry method process for etching |
| CN108682615A (en) * | 2018-05-04 | 2018-10-19 | 常州比太黑硅科技有限公司 | Cleaning after a kind of black silicon of dry method making herbs into wool |
| CN110391319A (en) * | 2019-08-29 | 2019-10-29 | 无锡尚德太阳能电力有限公司 | A kind of preparation method of the efficient black silicon cell of anti-PID effect |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251210A (en) * | 1997-03-21 | 2000-04-19 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| CN101635317A (en) * | 2009-05-26 | 2010-01-27 | 珈伟太阳能(武汉)有限公司 | Back aluminium diffused N type solar cell and manufacturing method of back electrode |
| CN101950779A (en) * | 2010-09-07 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing solar cell in situ |
| CN102646751A (en) * | 2011-02-22 | 2012-08-22 | 中国科学院微电子研究所 | Manufacturing method of quasi-black silicon high-efficiency solar cell with ultralow nanometer reflection-reducing structure |
| CN102714137A (en) * | 2009-10-16 | 2012-10-03 | 康奈尔大学 | Method and apparatus including nanowire structure |
| CN102725869A (en) * | 2010-01-27 | 2012-10-10 | 原子能和代替能源委员会 | Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate |
| CN103094419A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Preparation method of high-efficiency solar cell |
| CN103346214A (en) * | 2013-07-03 | 2013-10-09 | 上海交通大学 | Silicon substrate radial homojunction heterojunction solar battery and manufacturing method thereof |
| CN103730541A (en) * | 2014-01-13 | 2014-04-16 | 中国科学院物理研究所 | Solar cell nano emitting electrode and manufacture method thereof |
| CN204885179U (en) * | 2015-06-16 | 2015-12-16 | 镇江大全太阳能有限公司 | High -efficient battery of black silicon solar energy of anti LID |
-
2015
- 2015-06-16 CN CN201510330355.1A patent/CN106328736B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1251210A (en) * | 1997-03-21 | 2000-04-19 | 三洋电机株式会社 | Photovoltaic element and method for mfg. same |
| CN101635317A (en) * | 2009-05-26 | 2010-01-27 | 珈伟太阳能(武汉)有限公司 | Back aluminium diffused N type solar cell and manufacturing method of back electrode |
| CN102714137A (en) * | 2009-10-16 | 2012-10-03 | 康奈尔大学 | Method and apparatus including nanowire structure |
| CN102725869A (en) * | 2010-01-27 | 2012-10-10 | 原子能和代替能源委员会 | Method for producing a photovoltaic cell including the preparation of the surface of a crystalline silicon substrate |
| CN101950779A (en) * | 2010-09-07 | 2011-01-19 | 中国科学院微电子研究所 | Method for preparing solar cell in situ |
| CN102646751A (en) * | 2011-02-22 | 2012-08-22 | 中国科学院微电子研究所 | Manufacturing method of quasi-black silicon high-efficiency solar cell with ultralow nanometer reflection-reducing structure |
| CN103094419A (en) * | 2013-01-24 | 2013-05-08 | 山东力诺太阳能电力股份有限公司 | Preparation method of high-efficiency solar cell |
| CN103346214A (en) * | 2013-07-03 | 2013-10-09 | 上海交通大学 | Silicon substrate radial homojunction heterojunction solar battery and manufacturing method thereof |
| CN103730541A (en) * | 2014-01-13 | 2014-04-16 | 中国科学院物理研究所 | Solar cell nano emitting electrode and manufacture method thereof |
| CN204885179U (en) * | 2015-06-16 | 2015-12-16 | 镇江大全太阳能有限公司 | High -efficient battery of black silicon solar energy of anti LID |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393976A (en) * | 2017-08-02 | 2017-11-24 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN107393976B (en) * | 2017-08-02 | 2019-05-10 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN108493270A (en) * | 2018-03-14 | 2018-09-04 | 江西比太科技有限公司 | A kind of alkali cleaning dry method process for etching |
| CN108682615A (en) * | 2018-05-04 | 2018-10-19 | 常州比太黑硅科技有限公司 | Cleaning after a kind of black silicon of dry method making herbs into wool |
| CN110391319A (en) * | 2019-08-29 | 2019-10-29 | 无锡尚德太阳能电力有限公司 | A kind of preparation method of the efficient black silicon cell of anti-PID effect |
| CN110391319B (en) * | 2019-08-29 | 2021-08-24 | 无锡尚德太阳能电力有限公司 | Preparation method of efficient black silicon battery piece with anti-PID effect |
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