CN102610493A - Method for removing amorphous carbon films for cyclically utilizing silicon chips - Google Patents
Method for removing amorphous carbon films for cyclically utilizing silicon chips Download PDFInfo
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- CN102610493A CN102610493A CN2012100777020A CN201210077702A CN102610493A CN 102610493 A CN102610493 A CN 102610493A CN 2012100777020 A CN2012100777020 A CN 2012100777020A CN 201210077702 A CN201210077702 A CN 201210077702A CN 102610493 A CN102610493 A CN 102610493A
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- silicon chip
- amorphous
- recycle silicon
- film recycle
- amorphous carbon
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Abstract
The invention relates to the field of semiconductor manufacture, in particular to a method for removing amorphous carbon films for cyclically utilizing silicon chips. The invention provides the method for removing the amorphous carbon films for cyclically utilizing the silicon chips, the ashing process is carried out through producing plasmas by adopting a remote system or producing active O<+> by an ozone generator, the same amorphous carbon removal efficiency can be reached, and in addition, the damage to ions on the surfaces of the silicon chips is little, so the cyclic utilization rate of the silicon chips is improved.
Description
Technical field
The present invention relates to the manufacturing field of semiconductor integrated circuit, relate in particular to a kind of method of removing amorphous c film recycle silicon chip.
Background technology
At present; About removing the technology of amorphous carbon (amorphous carbon) thin layer; The common way of industry is that adopting with the identical process conditions of photoresistance removal is cineration technics, and then utilizes wet method to remove the polymer (polymer) on surface and the oxide layer that previous process produces.
Fig. 1 is a conventional process structure sketch map of removing amorphous carbon in the background technology of the present invention, and Fig. 2 is a conventional process flow diagram of removing amorphous carbon in the background technology of the present invention; Shown in Fig. 1-2, in reaction chamber 13, cineration technics adopts O usually
2In reaction chamber, produce in-situ plasma O
+, and active O
+Generate volatile gas such as CO, CO with amorphous carbon reaction
2Deng, thereby remove the amorphous carbon layer 12 on silicon chip 11 surfaces, and then utilize wet processing to remove the oxide that generates in residual polymer and the cineration technics; Adopt above-mentioned technology, can make to produce more ion dam age (damage) on the silicon chip 11, cause the cyclic utilization rate of silicon chip lower.
Summary of the invention
The invention discloses a kind of method of removing amorphous c film recycle silicon chip, it is characterized in that, may further comprise the steps:
Step S1: in reaction chamber, adopt remote system to produce plasma or the active O of ozone generator generation
+Carry out cineration technics, to remove amorphous carbon layer on the silicon chip;
Step S2: remove remaining polymer and oxide layer.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that, also is included in aerating oxygen in the said reaction chamber.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that the flow of said oxygen is 1000-10000sccm.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that, adopts wet processing to remove and removes remaining polymer and oxide layer.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that, the temperature in the said reaction chamber is 300-500 ℃.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that, the pressure in the said reaction chamber is 1-10Torr.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that the reaction time of said cineration technics is 0-600s.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that, when adopting remote system generation plasma to carry out cineration technics, its RF power is 50-3000W.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that, adopts remote system to produce plasma and carries out the O in the cineration technics
2Flow be 1000-20000sccm.
The method of above-mentioned removal amorphous c film recycle silicon chip is characterized in that, adopts ozone generator to produce active O
+When carrying out cineration technics, its O
2Flow be 1000-20000sccm.
In sum, owing to adopted technique scheme, the present invention to propose a kind of method of removing amorphous c film recycle silicon chip, produce plasma or the active O of ozone generator generation through adopting remote system
+Carry out cineration technics, not only can reach the efficient of same removal amorphous carbon, and less, thereby improved the cyclic utilization rate of silicon chip the ion dam age of silicon chip surface.
Description of drawings
Fig. 1 is a conventional process structure sketch map of removing amorphous carbon in the background technology of the present invention;
Fig. 2 is a conventional process flow diagram of removing amorphous carbon in the background technology of the present invention;
Fig. 3 is that the present invention removes and adopts remote system to produce the structural representation that plasma carries out cineration technics in the method for amorphous c film recycle silicon chip;
Fig. 4 is that the present invention removes and adopts ozone generator to produce O in the method for amorphous c film recycle silicon chip
+Carry out the structural representation of cineration technics;
Fig. 5 is the process flow diagram that the present invention removes the method for amorphous c film recycle silicon chip.
Embodiment
Be further described below in conjunction with the accompanying drawing specific embodiments of the invention:
Fig. 3 is that the present invention removes and adopts remote system to produce the structural representation that plasma carries out cineration technics in the method for amorphous c film recycle silicon chip; Fig. 5 is the process flow diagram that the present invention removes the method for amorphous c film recycle silicon chip.
Shown in Fig. 3 and 5; At first; Have the silicon chip 21 of amorphous carbon layer (Amorphous Carbon) 22 to be placed in the reaction chamber 23 surface coverage, and to adopt remote system 24 to produce plasmas be the cineration technics of 0-600s to these 21 times of carrying out of silicon chip, promptly active O
+Generate volatile gas such as CO, CO with amorphous carbon reaction
2Deng, thereby remove the amorphous carbon layer 22 on silicon chip 21 surfaces, and then utilize wet processing to remove the oxide that generates in residual polymer and the cineration technics.
Feeding reaction chamber 23 interior flows when wherein, carrying out cineration technics is the oxygen (O of 1000-10000sccm
2), and the temperature in the reaction chamber 23 are 300-500 ℃, pressure is 1-10Torr.
Further, the RF power of this remote system 24 is 50-3000W, O
2Flow be 1000-20000sccm.
Fig. 4 is that the present invention removes and adopts ozone generator to produce O in the method for amorphous c film recycle silicon chip
+Carry out the structural representation of cineration technics; Fig. 5 is the process flow diagram that the present invention removes the method for amorphous c film recycle silicon chip.
Shown in Figure 4 and 5, at first, there is the silicon chip 31 of amorphous carbon layer (Amorphous Carbon) 32 to be placed in the reaction chamber 33 surface coverage, and adopts ozone generator 34 to produce active O
+To these 31 times of carrying out of silicon chip be the cineration technics of 0-600s, promptly active O
+Generate volatile gas such as CO, CO with amorphous carbon reaction
2Deng, thereby remove the amorphous carbon layer 32 on silicon chip 31 surfaces, and then utilize wet processing to remove the oxide that generates in residual polymer and the cineration technics.
Further, the O that feeds in this ozone generator 34
2Flow be 1000-20000sccm.
In sum, owing to adopted technique scheme, the present invention to propose a kind of method of removing amorphous c film recycle silicon chip, produce plasma or the active O of ozone generator generation through adopting remote system
+Carry out cineration technics, not only can reach the efficient of same removal amorphous carbon, and less, thereby improved the cyclic utilization rate of silicon chip the ion dam age of silicon chip surface.
Through explanation and accompanying drawing, provided the exemplary embodiments of the ad hoc structure of embodiment, based on the present invention's spirit, also can do other conversion.Although foregoing invention has proposed existing preferred embodiment, yet these contents are not as limitation.
For a person skilled in the art, read above-mentioned explanation after, various variations and revise undoubtedly will be obvious.Therefore, appending claims should be regarded whole variations and the correction of containing true intention of the present invention and scope as.Any and all scope of equal value and contents all should be thought still to belong in the intent of the present invention and the scope in claims scope.
Claims (10)
1. a method of removing amorphous c film recycle silicon chip is characterized in that, may further comprise the steps:
Step S1: in reaction chamber, adopt remote system to produce plasma or the active O of ozone generator generation
+Carry out cineration technics, to remove amorphous carbon layer on the silicon chip;
Step S2: remove remaining polymer and oxide layer.
2. the method for removal amorphous c film recycle silicon chip according to claim 1 is characterized in that, also is included in aerating oxygen in the said reaction chamber.
3. the method for removal amorphous c film recycle silicon chip according to claim 2 is characterized in that the flow of said oxygen is 1000-10000sccm.
4. the method for removal amorphous c film recycle silicon chip according to claim 3 is characterized in that, adopts wet processing to remove and removes remaining polymer and oxide layer.
5. the method for removal amorphous c film recycle silicon chip according to claim 4 is characterized in that, the temperature in the said reaction chamber is 300-500 ℃.
6. the method for removal amorphous c film recycle silicon chip according to claim 5 is characterized in that, the pressure in the said reaction chamber is 1-10Torr.
7. the method for removal amorphous c film recycle silicon chip according to claim 6 is characterized in that the reaction time of said cineration technics is 0-600s.
8. according to the method for any described removal amorphous c film recycle silicon chip among the claim 1-7, it is characterized in that when adopting remote system generation plasma to carry out cineration technics, its RF power is 50-3000W.
9. the method for removal amorphous c film recycle silicon chip according to claim 8 is characterized in that, adopts remote system to produce plasma and carries out the O in the cineration technics
2Flow be 1000-20000sccm.
10. according to the method for any described removal amorphous c film recycle silicon chip among the claim 1-7, it is characterized in that, adopt ozone generator to produce active O
+When carrying out cineration technics, its O
2Flow be 1000-20000sccm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210077702.0A CN102610493B (en) | 2012-03-22 | 2012-03-22 | A kind ofly remove the method that amorphous c film recycles silicon chip |
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|---|---|---|---|
| CN201210077702.0A CN102610493B (en) | 2012-03-22 | 2012-03-22 | A kind ofly remove the method that amorphous c film recycles silicon chip |
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| CN102610493A true CN102610493A (en) | 2012-07-25 |
| CN102610493B CN102610493B (en) | 2015-08-26 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103646915A (en) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | A method for removing a C element in a SiCN thin film and a cyclic regeneration processing technique of a monitoring sheet containing the SiCN thin film |
| CN104956476A (en) * | 2013-11-06 | 2015-09-30 | 马特森技术有限公司 | Novel mask removal process strategy for vertical NAND device |
| WO2023226111A1 (en) * | 2022-05-24 | 2023-11-30 | 长鑫存储技术有限公司 | Semiconductor structure and forming method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004200300A (en) * | 2002-12-17 | 2004-07-15 | Toshiba Corp | Sram cell and integrated memory circuit using it |
| CN1633701A (en) * | 2001-02-12 | 2005-06-29 | 兰姆研究有限公司 | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| CN101319354A (en) * | 2008-06-27 | 2008-12-10 | 浙江大学 | Purification process for single-wall nano-carbon tube film |
-
2012
- 2012-03-22 CN CN201210077702.0A patent/CN102610493B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1633701A (en) * | 2001-02-12 | 2005-06-29 | 兰姆研究有限公司 | Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications |
| JP2004200300A (en) * | 2002-12-17 | 2004-07-15 | Toshiba Corp | Sram cell and integrated memory circuit using it |
| CN101319354A (en) * | 2008-06-27 | 2008-12-10 | 浙江大学 | Purification process for single-wall nano-carbon tube film |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104956476A (en) * | 2013-11-06 | 2015-09-30 | 马特森技术有限公司 | Novel mask removal process strategy for vertical NAND device |
| CN104956476B (en) * | 2013-11-06 | 2017-11-14 | 马特森技术有限公司 | New mask minimizing technology strategy for vertical nand device |
| CN103646915A (en) * | 2013-11-28 | 2014-03-19 | 上海华力微电子有限公司 | A method for removing a C element in a SiCN thin film and a cyclic regeneration processing technique of a monitoring sheet containing the SiCN thin film |
| WO2023226111A1 (en) * | 2022-05-24 | 2023-11-30 | 长鑫存储技术有限公司 | Semiconductor structure and forming method therefor |
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| Publication number | Publication date |
|---|---|
| CN102610493B (en) | 2015-08-26 |
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