CN105154852A - Method for overcoming boron pollution in PECVD technology of heterojunction solar cell - Google Patents
Method for overcoming boron pollution in PECVD technology of heterojunction solar cell Download PDFInfo
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- CN105154852A CN105154852A CN201410260428.XA CN201410260428A CN105154852A CN 105154852 A CN105154852 A CN 105154852A CN 201410260428 A CN201410260428 A CN 201410260428A CN 105154852 A CN105154852 A CN 105154852A
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Abstract
The invention provides a method for overcoming boron pollution in PECVD technology of a heterojunction solar cell. The method comprises performing I layer technology, N layer technology and P layer technology for a silicon chip by using a PECVD device of the heterojunction solar cell. The PECVD device of the heterojunction solar cell comprises a shared reusable tool used between the P layer technology and subsequent I layer technology. Water vapor treatment technology is added after the P layer technology to remove the boron residual on the surface of the reusable tool before the I layer technology. According to the invention, the boron residual on the surface of the reusable tool such as inside of the same chamber or a shared tray can be removed rapidly, passivation effect of the amorphous silicon on the surface of subsequent silicon chip can be improved, recombination of a carrier on the silicon face is reduced, and the minority carrier lifetime is prolonged.
Description
Technical field
The present invention relates to hetero-junction thin-film solar cell field, particularly relate to a kind of heterojunction solar battery pecvd process by boron pollution solution.
Background technology
Film/silicon/crystalline silicon heterojunction (HIT) belongs to third generation high performance solar batteries technology, it is a kind of mixed type solar battery utilizing crystalline silicon substrates and amorphous silicon membrane to make, its manufacture method is the front deposition very thin intrinsic amorphous silicon film and p-type amorphous silicon membrane of the substrate utilizing PECVD after surface-texturing, then at the thin intrinsic amorphous silicon film of the backside deposition of substrate and N-shaped amorphous silicon membrane; Utilize sputtering technology at the two sides depositing transparent indium thing conductive film of battery, on transparent oxide conductive film, make Ag electrode by the method for silk screen printing.It combines the advantage of first-generation silicon single crystal and s-generation silicon film, there is the features such as efficiency of conversion is high, temperature factor is low, have huge market outlook, will the direction of whole silica-based solar cell be led.
In heterojunction solar battery is produced; boron is the very active and great element of hazardness of one; particularly with the closely-related PECVD of silicon chip surface (PlasmaEnhancedChemicalVaporDeposition) process section; after having covered P doped layer technique; all can there is more boron and remain in cavity, tray surface; namely can contain boron in residual after P layer process non-crystalline silicon, these boron can be separated out from non-crystalline silicon, thus have influence on I technique below.And existing heterojunction solar battery PECVD device commercially just have references to thin-film solar cells PECVD device, in order to avoid the crossed contamination of boron, or after P layer process terminates, with NF3 (nitrogen trifluoride) or by traditional wet method mode, cavity is cleaned, ensure I/N technique below; Or directly I/P/N tri-process cavity are separated completely.In production, in order to the double-sided coating feature in conjunction with heterojunction solar battery, seek the optimization of technique collocation and the maximization of production capacity, substantially I-P+I-N or I-N+I-P flow process is all adopted, although I/P/N cavity has all separated, but I-P technique shares a pallet, and I-N technique shares another pallet.
After heterojunction solar battery PECVD device cavity has covered P tunic, clean with traditional NF3, the boron of cavity cannot be cleaned up completely, if gone I layer amorphous passivation layer technique again with this cavity, seriously will reduce the passivation effect of passivation layer, directly affect minority carrier life time and heterojunction solar battery efficiency.Hundreds of nanometer is had for I layer thickness thin-film solar cells, boron pollution can appropriateness be tolerated its impact caused, but the I layer thickness of heterojunction solar battery only 5 ran, therefore boron pollution can the serious effectiveness of performance reducing heterojunction solar battery on the impact that I layer process causes.If carry out wet-cleaned to the cavity by boron pollution, although can reach desirable cleaning performance, need equipment to lower the temperature, after having cleaned, need again to heat up and recover, holding time is longer, is unfavorable for the application of industrialization.
The separating completely of I/P/N cavity in technique, although the crossed contamination that cavity is asked can be avoided, sharing of pallet, particularly I-P pallet is shared, and the boron of tray surface remains, easily when follow-up I layer process, evaporate into I layer process cavity, cause pollution, affect I layer passivation effect equally.If enter different cavity at every turn, change different pallet, ask when silicon chip of taking needs to take a large amount of, be unfavorable for large-scale production.
Meanwhile, produce line upper tray at existing heterojunction solar battery and all recycle, need the longer time just can again clear up, the existence of tray surface boron pollution, also can have an impact to the technology stability of different batches battery.
In view of the above problems, we are necessary to improve prior art, to overcome above technological deficiency.
Summary of the invention
The object of the present invention is to provide a kind of residual heterojunction solar battery pecvd process of circulation apparatus surface boron of can removing rapidly by boron pollution solution, described method comprises heterojunction solar battery PECVD device, described heterojunction solar battery PECVD device carries out I layer process to silicon chip, N layer process and P layer process, described heterojunction solar battery PECVD device comprises the circulation apparatus in order to share between described P layer process and follow-up I layer process, after P layer process, increase steam treatment technique remain in order to the boron removing described circulation apparatus surface before I layer process.
As a further improvement on the present invention, the operation pressure of described steam treatment technique is 0.1-5mbar, and the process time is 1-300s.
As a further improvement on the present invention, described heterojunction solar battery PECVD device comprises the pallet in order to support silicon chip in single PECVD cavity and described PECVD cavity, described I layer process, N layer process and P layer process carry out in described single PECVD cavity jointly, described circulation apparatus is described PECVD cavity, carries out described steam treatment technique and remain in order to the boron removing described PECVD housing surface before I layer process after P layer process.
As a further improvement on the present invention, described steam treatment technique also comprise early stage in order to remove NF3 cleaning that circulation apparatus surface silicon remains and the H2 plasma-treating technology in order to remove the fluorine residue thing of circulation apparatus surface after described NF3 cleaning.
As a further improvement on the present invention, described method comprises:
Step one: I layer process is carried out to silicon chip one side;
Step 2: I layer process is carried out to silicon chip another side;
Step 3: carry out N layer process or P layer process on I layer;
Step 4: carry out the P layer needed for heterojunction solar battery or N layer process on the I layer of silicon chip another side.
As a further improvement on the present invention, described method comprises:
Step one: I layer process is carried out to silicon chip one side;
Step 2: carry out N layer or P layer process on described I layer;
Step 3: I layer process is carried out to silicon chip another side;
Step 4: carry out the P layer needed for heterojunction solar battery or N layer process on described I layer.
As a further improvement on the present invention, described heterojunction solar battery PECVD device comprises P layer process reaction chamber and the reaction chamber in order to carry out I layer process, described P layer process carries out in independently P layer process reaction chamber, described circulation apparatus is the pallet in order to be delivered to from P layer process reaction chamber to carry out in the reaction chamber of I layer process by silicon chip, carries out described steam treatment technique and remain in order to the boron removing described tray surface before I layer process after P layer process.
As a further improvement on the present invention, described steam treatment technique is carried out in described P layer process reaction chamber, and described steam treatment technique remains in order to the boron removing described silicon chip and tray surface.
As a further improvement on the present invention, described heterojunction solar battery PECVD device comprises the slice chamber in order to silicon chip and pallet to be taken out after completing P layer process, described steam treatment technique is carried out in described slice chamber, after steam treatment completes, make slice chamber vacuum breaker again, described steam treatment technique remains in order to the boron removing described silicon chip and tray surface.
As a further improvement on the present invention, described heterojunction solar battery PECVD device comprise slice chamber in order to silicon chip and pallet are taken out after completing P layer process and in order to silicon chip and pallet are sent in the reaction chamber in order to carry out I layer process carry out I layer process enter sheet chamber, described slice chamber and enter the vacuum chamber being provided with to carry out described steam treatment technique between sheet chamber, described pallet out unloads silicon chip afterwards from slice chamber, then described pallet carries out described pallet after steam treatment technique through described vacuum chamber and refills and carry silicon chip from the reaction chamber entering sheet chamber and enter to carry out I layer process.
Compared with prior art, the present invention, by the processing method of steam treatment, effectively can solve single PECVD cavity or I-P when sharing pallet, the boron pollution problem that P layer process brings.That is, the boron of circulation apparatus as single PECVD inside cavity or shared tray surface can be removed rapidly remain, the passivation effect of follow-up silicon chip surface non-crystalline silicon can be improved like this, reduce the compound of current carrier at silicon face, improve minority carrier life time.
Accompanying drawing explanation
Fig. 1 is heterojunction solar battery pecvd process of the present invention the first schematic flow sheet by boron pollution solution first embodiment;
Fig. 2 is the second schematic flow sheet of heterojunction solar battery pecvd process of the present invention by boron pollution solution first embodiment;
Fig. 3 is heterojunction solar battery pecvd process of the present invention the third schematic flow sheet by boron pollution solution first embodiment;
Fig. 4 is the four kind schematic flow sheet of heterojunction solar battery pecvd process of the present invention by boron pollution solution first embodiment;
Fig. 5 is heterojunction solar battery pecvd process of the present invention the first schematic flow sheet by boron pollution solution second embodiment;
Fig. 6 is the second schematic flow sheet of heterojunction solar battery pecvd process of the present invention by boron pollution solution second embodiment;
Fig. 7 is heterojunction solar battery pecvd process of the present invention the third schematic flow sheet by boron pollution solution second embodiment.
Embodiment
Describe the present invention below with reference to specific embodiment shown in the drawings.What deserves to be explained is, hereafter described embodiment does not limit the present invention, and the structure that those of ordinary skill in the art makes according to these embodiments, method or conversion functionally are all included in protection scope of the present invention.
A kind of heterojunction solar battery pecvd process of the present invention comprises heterojunction solar battery PECVD device by boron pollution solution, described heterojunction solar battery PECVD device carries out I layer process to silicon chip, N layer process and P layer process, described heterojunction solar battery PECVD device comprises the circulation apparatus in order to share between described P layer process and follow-up I layer process, concrete, described circulation apparatus can be in order to carry out I layer process in following examples, the single PECVD cavity of N layer process and P layer process or be circulated between each individual cavity in order to support and the pallet transmitting silicon chip.Owing to can contain boron in non-crystalline silicon residual after P layer process, these boron can be separated out from non-crystalline silicon, thus have influence on I technique below.Remain so the present invention increases steam treatment technique after P layer process in order to the boron removing described circulation apparatus surface before I layer process.Water vapour goes the principle of boron to be: water vapour and boron are easy to oxidizing reaction occurs, and generate stable B (OH) 3 or Si-B-O etc., thus reduce the impact of former active boron on intrinsic layer.The operation pressure of steam treatment technique of the present invention is 0.1-5mbar, and the process time is 1-300s, so arranges, and can remove the boron residue of housing surface preferably.
Shown in please refer to the drawing 1 to 4, for heterojunction solar battery pecvd process of the present invention is by the first embodiment of boron pollution solution, namely heterojunction solar battery PECVD device is single PECVD cavity, the cavity of P layer process is dependent cavity, but shares with the cavity of I layer process and N layer process.
In single PECVD cavity, complete the I/N-I/P technique on silicon chip two surface, main technical process comprises four kinds of modes: shown in please refer to the drawing 1, and first kind of way is I-I-N-P flow process, and described flow process comprises step one: carry out I layer process to silicon chip one side; Step 2: turn-over is carried out to silicon chip and I layer process is carried out to silicon chip another side; Step 3: carry out N layer process on I layer; Step 4: again turn-over is carried out to silicon chip and to the P layer process I layer of silicon chip another side carried out needed for heterojunction solar battery.Setting like this, the I layer process on described silicon chip two sides all completed before N layer process and P layer process, and the I layer process on silicon chip two sides can be avoided better to be subject to the boron pollution of P layer process, thus made the I layer on silicon chip two sides all have better passivation effect.In addition, the first embodiment of the present invention all carries out NF3 cleaning after N layer process, and this technique effectively can remove housing surface phosphorus residue, prevents the crossed contamination of phosphorus in subsequent technique.Experiment shows, phosphorus damage ratio boron pollution is much little on passivation layer impact, can be cleaned up by NF3.
Shown in please refer to the drawing 2, the second way is I-I-P-N flow process, and described flow process comprises step one: carry out I layer process to silicon chip one side; Step 2: turn-over is carried out to silicon chip and I layer process is carried out to silicon chip another side; Step 3: carry out P layer process on I layer; Step 4: again turn-over is carried out to silicon chip and to the N layer process I layer of silicon chip another side carried out needed for heterojunction solar battery.Setting like this, the I layer process on described silicon chip two sides all completed before N layer process and P layer process, and the I layer process on silicon chip two sides can be avoided better to be subject to the boron pollution of P layer process, thus made the I layer on silicon chip two sides all have better passivation effect.In addition, the steam treatment technique of carrying out after described P layer process can remove the boron remaining in described housing surface because of P layer process equally before I layer process.
Shown in please refer to the drawing 3, the third mode is I-N-I-P flow process, and described flow process comprises step one: carry out I layer process to silicon chip one side; Step 2: carry out N layer process on described I layer; Step 3: turn-over is carried out to silicon chip and I layer process is carried out to silicon chip another side; Step 4: carry out the P layer process needed for heterojunction solar battery on described I layer, so arrange, only needs to carry out a turn-over to silicon chip, saves the silicon chip turn-over time, improve production capacity in whole flow process.
Shown in please refer to the drawing 4, the 4th kind of mode is I-P-I-N flow process, and described flow process comprises step one: carry out I layer process to silicon chip one side; Step 2: carry out P layer process on I layer; Step 3: turn-over is carried out to silicon chip and I layer process is carried out to silicon chip another side; Step 4: carry out the N layer process needed for heterojunction solar battery on I layer, so arrange, also only needs to carry out a turn-over to silicon chip, saves the turn-over time of silicon chip, improve production capacity in whole flow process.
Above, carrying out turn-over to silicon chip can realize by changing pallet, also can carry out turn-over for other modes to silicon chip in other embodiments.
Time after P layer process with described steam treatment technique cleaning described shared single PECVD cavity, pallet and silicon chip take out in described shared PECVD cavity, therefore described circulation apparatus is described shared PECVD cavity.No matter which kind of technical process, after P layer process, all steam treatment technique is carried out to described shared single PECVD cavity, namely steam-treated for some time is used under vacuo, the boron residue of removing housing surface, avoids when follow-up I layer process, the crossed contamination caused, improve the film quality of passivation layer, improve the passivation effect of silicon chip surface.
In addition, the first embodiment described can also be two kinds of situations, the first situation is only do steam treatment to the single PECVD cavity shared, the second situation is except doing except steam treatment to the single PECVD cavity shared, also comprise the NF3 cleaning in early stage, this technique effectively can remove housing surface silicon residue, ensures that follow-up steam treatment is more abundant.
Further, in the second situation, can also comprise the H2 plasma-treating technology after NF3 cleaning in early stage, this technique effectively can remove the fluorine residue thing of housing surface after NF3 cleaning, ensures that follow-up steam treatment is more abundant.Described H2 plasma-treating technology comprises the mixed gas etc. of pure H2 or H2 and other gas.
To sum up, the present invention makes single PECVD cavity can do heterojunction solar battery I/P/N tri-layer process, without the need to by cavity independently separately, so arranges, do not need to arrange multiple cavity thus greatly reduce device fabrication cost, and solving the residual cross-contamination issue of boron.Find to be done the passivation of I layer by the PECVD cavity of boron pollution from experiment, minority carrier life time only has 500-1000us; And with after steam treatment, same I layer process condition, minority carrier life time can reach about 2000-3500us, and minority carrier life time improves more than at least 50%, and passivation layer quality improvement is obvious.
Shown in please refer to the drawing 5 to 7, for heterojunction solar battery pecvd process of the present invention is by boron pollution solution the second embodiment, namely P layer process completes in independently reaction cavity, but I layer process and P layer process share pallet.Setting like this, does not need to change pallet, can save the plenty of time changed needed for pallet, thus increase production capacity; On the other hand, cavity is independent and only pallet is circulation apparatus time, make the boron residual quantity on pallet less because pallet table area is less, so little on the impact of follow-up I layer process, only can do steam treatment to pallet, so can reduce the NF3 wash number in early stage, reduce technique beat, thus improve production capacity further.Described heterojunction solar battery PECVD device comprises P layer process reaction chamber and the reaction chamber in order to carry out I layer process, and described circulation apparatus is the pallet in order to be delivered to from P layer process reaction chamber to carry out in the reaction chamber of I layer process by silicon chip.In the present embodiment, the described reaction chamber in order to carry out I layer process is independently I layer process reaction chamber, and in other embodiments, the described reaction chamber in order to carry out I layer process can also carry out N layer process etc. after carrying out I layer process.Described heterojunction solar battery PECVD device comprise slice chamber in order to silicon chip and pallet are taken out after completing P layer process and in order to silicon chip and pallet are sent in the reaction chamber in order to carry out I layer process carry out I layer process enter sheet chamber, the main technical process of described the second embodiment comprises three kinds of modes, the first flow process is for when doing I-P technical process, pallet holds concurrently silicon chip in P layer process reaction cavity, after finishing P layer coating technique, and then use steam treatment, the boron that can remove tray surface and silicon chip surface remains; The second flow process is for when doing I-P technical process, and pallet holds concurrently silicon chip in the cavity of slice chamber, uses Steam treatment for some time under vacuo, and then makes slice chamber vacuum breaker, and the boron that can remove tray surface and silicon chip surface remains; The third flow process is for when when doing I-P technical process, pallet slice and entering chamber outside is transmitted between sheet, and silicon chip takes out from pallet, and with water vapour to tray surface process for some time, the boron that can remove tray surface is residual.
Shown in please refer to the drawing 5, for the schema of the first pallet I-P circulation technology, described flow process is: tray loading treats overlay film silicon chip, then pass through to enter I layer process reaction chamber into sheet chamber and carry out I layer coating technique, after I layer process, pallet and silicon chip enter independently P layer process reaction chamber and carry out P layer process, then through slice chamber out after pallet unloaded the silicon chip of I-P overlay film, pallet is passed to and newly a collection ofly treats that overlay film silicon chip is in order to enter into sheet chamber into loading before sheet chamber afterwards, thus realizes recycling of pallet.Concrete, steam treatment technique is increased inside independently P layer process reaction chamber, so, the boron effectively can removing tray surface remains, pallet is avoided to reload after silicon chip, when I layer process reaction chamber carries out technique, the crossed contamination caused, affect the passivation effect of non-crystalline silicon, thus affect minority carrier life time and battery efficiency.And from the test result of minority carrier life time and battery efficiency, suitable steam treatment can not have a negative impact to the silicon chip of tray surface, can not affect minority carrier life time and battery efficiency.
Carry out steam treatment inside P layer process reaction chamber, the security of technique, stability can be ensured, to equipment itself without the need to extra requirement, do not need additionally to increase a vacuum cavity, reduce equipment cost.
Carry out steam treatment inside P layer process reaction chamber, in order to ensure technique beat, P layer process reaction chamber, after completing P layer coating technique, there are certain requirements the P layer process time in P layer process reaction chamber.
Shown in please refer to the drawing 6, for the schema of the second pallet I-P circulation technology, described flow process is roughly the same with the first pallet I-P circulation technology flow process, and difference is: described steam treatment technique completes in slice chamber, so arranges, also the boron effectively can removing tray surface remains, pallet is avoided to reload after silicon chip, when I reaction chamber carries out technique, the crossed contamination caused, affect the passivation effect of non-crystalline silicon, thus affect minority carrier life time and battery efficiency.From the test result of minority carrier life time and battery efficiency, rational steam treatment can not have a negative impact to silicon chip surface, can not affect minority carrier life time and battery efficiency.
Inside slice chamber, carry out steam treatment technique, carry out steam treatment relative to inside P layer process reaction chamber, the pressure that P reaction chamber carries out the P layer process time can be alleviated, contribute to the maximization of heterojunction solar battery production capacity.
Carry out steam treatment technique inside slice chamber, need there is higher requirement to the gentle body drain rate of the vacuum tightness of slice cavity etc.
Carry out steam treatment technique inside slice chamber, do not need additionally to increase a vacuum cavity thus avoid increasing device fabrication cost.
Shown in please refer to the drawing 7, for the schema of the third pallet I-P circulation technology, described flow process is roughly the same with the first pallet I-P circulation technology flow process, difference is: outside chamber slice and enter sheet transmit between increase a vacuum cavity, and steam treatment technique completes in described vacuum cavity, setting like this, also the boron effectively can removing tray surface remains, pallet is avoided to reload after silicon chip, when I layer process reaction chamber carries out technique, the crossed contamination caused, affects the passivation effect of non-crystalline silicon, thus affects minority carrier life time and battery efficiency;
Carry out steam treatment technique when transmitting outside chamber, water vapour can be avoided and contact with the direct of silicon chip surface;
Carry out steam treatment technique when transmitting outside chamber, contribute to the pressure of the process time alleviating P layer process reaction cavity and slice cavity.
Three kinds of flow processs of described the second embodiment, respectively by the optimized choice of steam treatment technique at three different positionss, can not extend the time of whole technical process, can ensure technique beat.
In sum, the boron that steam treatment technique can remove rapidly circulation apparatus such as same inside cavity or shared tray surface remains, so can improve the passivation effect of follow-up silicon chip surface non-crystalline silicon, reduce the compound of current carrier at silicon face, improve minority carrier life time.The present invention uses rational steam treatment technique, can not produce negative impact to the silicon chip on pallet, can not affect minority carrier life time and heterojunction solar battery efficiency.
Be to be understood that, although this specification sheets is described according to embodiment, but not each embodiment only comprises an independently technical scheme, this narrating mode of specification sheets is only for clarity sake, those skilled in the art should by specification sheets integrally, technical scheme in each embodiment also through appropriately combined, can form other embodiments that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility embodiment of the present invention; they are also not used to limit the scope of the invention, all do not depart from the skill of the present invention equivalent implementations done of spirit or change all should be included within protection scope of the present invention.
Claims (10)
1. a heterojunction solar battery pecvd process is by boron pollution solution, described method comprises heterojunction solar battery PECVD device, described heterojunction solar battery PECVD device carries out I layer process, N layer process and P layer process to silicon chip, described heterojunction solar battery PECVD device comprises the circulation apparatus in order to share between described P layer process and follow-up I layer process, it is characterized in that: after P layer process, increase steam treatment technique remain in order to the boron removing described circulation apparatus surface before I layer process.
2. heterojunction solar battery pecvd process according to claim 1 is by boron pollution solution, it is characterized in that: the operation pressure of described steam treatment technique is 0.1-5mbar, and the process time is 1-300s.
3. heterojunction solar battery pecvd process according to claim 1 is by boron pollution solution, it is characterized in that: described heterojunction solar battery PECVD device comprises the pallet in order to support silicon chip in single PECVD cavity and described PECVD cavity, described I layer process, N layer process and P layer process carry out in described single PECVD cavity jointly, described circulation apparatus is described PECVD cavity, carries out described steam treatment technique and remain in order to the boron removing described PECVD housing surface before I layer process after P layer process.
4. heterojunction solar battery pecvd process according to claim 1 is by boron pollution solution, it is characterized in that: described steam treatment technique also comprise early stage in order to remove NF3 cleaning that circulation apparatus surface silicon remains and the H2 plasma-treating technology in order to remove the fluorine residue thing of circulation apparatus surface after described NF3 cleaning.
5. heterojunction solar battery pecvd process according to claim 3 is by boron pollution solution, it is characterized in that: described method comprises:
Step one: I layer process is carried out to silicon chip one side;
Step 2: I layer process is carried out to silicon chip another side;
Step 3: carry out N layer or P layer process on I layer;
Step 4: carry out the P layer needed for heterojunction solar battery or N layer process on the I layer of silicon chip another side.
6. heterojunction solar battery pecvd process according to claim 3 is by boron pollution solution, it is characterized in that: described method comprises:
Step one: I layer process is carried out to silicon chip one side;
Step 2: carry out N layer or P layer process on described I layer;
Step 3: I layer process is carried out to silicon chip another side;
Step 4: carry out the P layer needed for heterojunction solar battery or N layer process on described I layer.
7. heterojunction solar battery pecvd process according to claim 1 is by boron pollution solution, it is characterized in that: described heterojunction solar battery PECVD device comprises P layer process reaction chamber and the reaction chamber in order to carry out I layer process, described P layer process carries out in independently P layer process reaction chamber, described circulation apparatus is the pallet in order to be delivered to from P layer process reaction chamber to carry out in the reaction chamber of I layer process by silicon chip, carries out described steam treatment technique and remain in order to the boron removing described tray surface before I layer process after P layer process.
8. heterojunction solar battery pecvd process according to claim 7 is by boron pollution solution, it is characterized in that: described steam treatment technique is carried out in described P layer process reaction chamber, described steam treatment technique remains in order to the boron removing described silicon chip and tray surface.
9. heterojunction solar battery pecvd process according to claim 7 is by boron pollution solution, it is characterized in that: described heterojunction solar battery PECVD device comprises the slice chamber in order to silicon chip and pallet to be taken out after completing P layer process, described steam treatment technique is carried out in described slice chamber, after steam treatment completes, make slice chamber vacuum breaker again, described steam treatment technique remains in order to the boron removing described silicon chip and tray surface.
10. heterojunction solar battery pecvd process according to claim 7 is by boron pollution solution, it is characterized in that: described heterojunction solar battery PECVD device comprise slice chamber in order to silicon chip and pallet are taken out after completing P layer process and in order to silicon chip and pallet are sent in the reaction chamber in order to carry out I layer process carry out I layer process enter sheet chamber, described slice chamber and enter the vacuum chamber being provided with to carry out described steam treatment technique between sheet chamber, described pallet out unloads silicon chip afterwards from slice chamber, then described pallet carries out described pallet after steam treatment technique through described vacuum chamber and refills and carry silicon chip from the reaction chamber entering sheet chamber and enter to carry out I layer process.
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| CN111599893A (en) * | 2020-05-29 | 2020-08-28 | 中威新能源(成都)有限公司 | Preparation method of stable and high-efficiency silicon heterojunction solar cell |
| WO2022027994A1 (en) * | 2020-08-03 | 2022-02-10 | 苏州迈正科技有限公司 | Coating apparatus, method and system, solar cell, module, and power generation system |
| CN114540794A (en) * | 2017-04-14 | 2022-05-27 | 西安德盟特半导体科技有限公司 | Method and device for removing deposited film on inner wall of CVD reaction cavity |
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| US11967662B2 (en) | 2019-09-05 | 2024-04-23 | Meyer Burger (Germany) Gmbh | Backside emitter solar cell structure having a heterojunction and method and device for producing the same |
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| CN111599893A (en) * | 2020-05-29 | 2020-08-28 | 中威新能源(成都)有限公司 | Preparation method of stable and high-efficiency silicon heterojunction solar cell |
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