CN102591041A - Integrated type online electro-optic modulator with graphene thin film and D-type optical fiber - Google Patents

Integrated type online electro-optic modulator with graphene thin film and D-type optical fiber Download PDF

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Publication number
CN102591041A
CN102591041A CN201210067024XA CN201210067024A CN102591041A CN 102591041 A CN102591041 A CN 102591041A CN 201210067024X A CN201210067024X A CN 201210067024XA CN 201210067024 A CN201210067024 A CN 201210067024A CN 102591041 A CN102591041 A CN 102591041A
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optical fiber
type optical
thin film
graphene
silicon dioxide
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CN102591041B (en
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吴宇
易玮琪
饶云江
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Abstract

The invention belongs to the technical field of optical communication and sensing transmission of optical communication, and provides an integrated type online electro-optic modulator with a graphene thin film and a D-type optical fiber to overcome the disadvantages that the traditional electro-optic modulator is large in volume, high in energy consumption, narrow in modulation bandwidth, high in insertion loss, easy in interruption and the like. The electro-optic modulator comprises a silicon dioxide substrate, the D-type optical fiber arranged inside a groove of the silicon dioxide substrate, the graphene thin film coated on a polished surface of the D type optical fiber, and two metal electrodes oppositely arranged at the two sides of the graphene thin film, wherein one of the two metal electrodes is attached to the edge of the graphene thin film, the other one of the two metal electrodes is connected with the silicon dioxide substrate, and packaging adhesive used for packaging is arranged on a surface formed by the silicon dioxide substrate and the D-type optical fiber. The integrated type online electro-optic modulator with the graphene thin film and the D-type optical fiber, disclosed by the invention, has the advantages of small size, low power consumption and low cost, signal light is not subjected to the requirement of skewed normal distribution, few system error is produced, and the optical insertion loss is low; in addition, no crystal refraction effect is exerted and the pulse quality is excellent. The graphene has the advantages of sensitive electro-optic response and high modulation speed.

Description

The online electrooptic modulator of graphene film D type optical fiber integrated form
Technical field
The invention belongs to optical communication and sensing transmission technique field thereof, provide a kind of graphene film D type optical fiber integrated form online electrooptic modulator.
Background technology
As the principal mode of modern communications, optical fiber communication has characteristics such as broadband, low-loss, high capacity, reliability height.Along with the fast development of high speed transmission system, people also improve the requirement of bandwidth day by day.As an important component part of optical communication, optical modulation also more and more receives people's attention.The effect of light modulation techniques is that bit signal is loaded on the light wave, promptly produces the light pulse of being modulated through continuous on-off action.According to the principle of work of modulator, photomodulator can be divided into electrooptic modulator, acousto-optic modulator, magneto-optic modulator and electricity and cause the absorption modulator.And electrooptical modulation can be directly and the circuit communication systems incorporate, is wherein maturation, most widely used a kind of technology.
The principle of work of traditional electrooptic modulator is to utilize the linear electro-optic effect of medium, and promptly the Pockles effect is come work.Under the alive outside effect, the effective refractive index linear change of medium, modulation output light intensity produces pulse signal.Its structure generally is in series by the polarizer, electro-optic crystal, bias electrode, analyzer and signal amplifier; Light signal gets into electro-optic crystal after through the polarizer; Electro-optic crystal changes refractive index by the modulation requirement under action of electric signals; Make that light signal is modulated to go out different polarization states, demonstrate different intensity through behind the analyzer, thereby produce modulated pulse trains.Current, commercial electrooptic modulator has KTP crystal modulator, lithium columbate crystal modulator, monocrystalline silicon modulator etc.
Along with the raising day by day of user's request, numerous limitation of traditional electrooptic modulator have become the very important bottleneck of communication science development.At first, traditional electrical photomodulator size is generally several millimeters to tens centimetres, and volume is bigger, and the insertion loss between device and the fibre system is bigger, is not easy to integrated and the micro-system application; The second, the physicochemical property of modulation crystal material are stable inadequately, make electrooptic modulator be subject to the influence of temperature humidity and photo damage threshold value etc.; The 3rd, the driving voltage of traditional electrical photomodulator is generally several several hectovolts that lie prostrate, and needs higher threshold voltage, and energy consumption is high, heat production is many, noise is big; The 4th, because electro-optic crystal, the refractive index homogeneity is not high enough, and the ABSORPTION AND SCATTERING loss is bigger, so the energy dissipation of traditional electrical photomodulator is serious; The 5th; Crystals with different is selective to the transmitted light wave frequency range; Usually have only tens nanometers, cause traditional electrical photomodulator bandwidth wide inadequately, and large scale, high driving voltage make that also its transfer rate is slow, bigger operating lag is arranged; The distortionless transmission requirement of high-level efficiency be can't satisfy, wavelength-division multiplex and wide-band modulation are unfavorable for; The 6th, the traditional electrical photomodulator generally is based on the Polarization Control light intensity, and the precision of system is had very high requirement, is subject to disturb, and system stability is not high enough.
Graphene is the novel two-dimensional material that a kind of carbon atom is hexagonal honeycomb lattice arrangement, also be at present the thinnest in the world also be the hardest nano material.Its thickness is a carbon atom diameter (about 10nm) only; Electric conductivity is strong, and the resistivity 10-9 ohm of only having an appointment is much smaller than metals such as copper, silver; Absorption to light is very low, is merely 2.3%, and logical photosensitiveness is good; Chemical property is stable, is difficult for oxidation.Graphene is determined by its Fermi level the absorbent properties of light.When not applying external voltage, the Fermi level of Graphene is near the dirac point.At this moment, inject the light that frequency is v0, can be by the Electron absorption in the band between Graphene to change electron level, light must be many more by Electron absorption, then waveguiding effect more a little less than.When apply a negative voltage (usually less than-1V) time, conduction band enlarges, the forbidden band compression, Fermi level reduces away from below the dirac point, does not have to absorb the bound electron of luminous energy at interband, so light signal is shown as conducting.When applying an enough big positive voltage (usually greater than 3.8V), Fermi level raises, and is higher than the dirac point, and at this moment, the forbidden band ratio enlarges, and the light of interband transmission is absorbed by a large amount of, shows as photoresistance.Through regulating the bias voltage of graphene layer, can regulate its Fermi level, and then realize make-break operation Graphene surface conductive light, reached purpose with the electric signal modulated light signal.
Many series devices of using in the modern optical networks all have the problem of docking with single-mode fiber, and the result causes inserting problem such as loss increase, power reflection and appliance integrality be relatively poor.One of its solution just is to use the single-mode fiber of single-sided polishing.D type optical fiber is through one section new construction optical fiber that carries out forming after the single-sided polishing to single-mode fiber, because the similar letter of its shape of cross section " D ", so be called D type optical fiber.When light transmits in fibre core; Because light guide approaches polished surface; Part light can be propagated on polished surface with the form of evanescent wave, so D type optical fiber can constitute senser element and the various integrating optical photocontrol and the communication device etc. of various surface light evanescent waves.
Compare and traditional crystal integrated electro-optical modulation device, have clear superiority based on the electrooptical modulation mode of graphene film-D type optical fiber structure.At first, volume is less, is used for the several approximately nm of graphene film thickness of electrooptical modulation, even devices such as supplemantary electrode, substrates, its volume also is far smaller than the size of the about 10mm-100mm of traditional integrated electro-optic modulator; Secondly, loss is extremely low, in the electrooptic modulator of Graphene-D type optical fiber structure; Light along D type optical fiber and the propagation of graphene film surface, and acts on the form of evanescent wave with it after general single mode fiber input mutually; Then by single-mode fiber output light signal; So there are not problems such as device access, the path is short, and Mode Coupling is simple; The 3rd, energy consumption is very little, than the integrated electrooptic modulator of tradition; In the modulation system of Graphene-D type optical fiber structure, electric signal only provides bias voltage, does not have current loop; Do not produce electric heating in theory, the driving voltage of the energy level of atom level modulation simultaneously is also relatively low; The 4th, speed is faster, and bandwidth is bigger, compares traditional electrooptic modulator, and the bandwidth of graphene film-D type optical fiber structure electro-optic modulation system is not limited by the frequency-selecting of crystalline nature and doped fiber, can realize that visible light arrives far wide area modulation.
Summary of the invention
Traditional electrical photomodulator volume is big, energy consumption is high, modulation band-width is narrow in order to overcome, insert loss big, be subject to defective such as interference; Provide a kind of graphene film D type optical fiber integrated form online electrooptic modulator; Its size is less, bias voltage pact-5V, modulation efficiency>90%; The about 1000nm-1700nm of wavelength coverage, modulating speed can reach more than the 50GHz.This modulator structure is simple, with low cost, size is small, easy to operate, can be integrated in efficiently in the Circuits System, realize the high speed electro-optical modulation of chip-scale.
The present invention is for realizing that above-mentioned purpose adopts following technical scheme:
The online electrooptic modulator of a kind of graphene film D type optical fiber integrated form; It is characterized in that: comprise silicon dioxide substrates (6), be arranged on the D type optical fiber (1) in silicon dioxide substrates (6) groove; Be coated in the graphene film (2) on the D type optical fiber polished surface (11), two metal electrodes (3) that are oppositely arranged on graphene film (2) both sides; Said metal electrode one of them and graphene film layer (2) edge attach; Another and silicon dioxide substrates (6) are joined, and silicon dioxide substrates (6) is provided with the packaging plastic that is used to encapsulate with the face that D type optical fiber (1) forms.
Say that further said metal electrode (3) two ends are applied with the bias voltage that the light transmission rate of graphene film (2) is controlled.
Say that further said packaging plastic is low-refraction ultraviolet glue (4).
The present invention has following beneficial effect:
One, the present invention is owing to adopted Graphene-D type optical fiber structure, and than the traditional electrical photomodulator, its size and power consumption are small, cost is low, and flashlight is not had the requirement of polarization attitude, and it is all very little that systematic error and light insert loss; No crystal refraction effect, pulse quality is good; The Graphene electro-optic response is sensitive, modulating speed fast (theory can reach 500GB/s).
Two, the present invention is owing to adopted Graphene-D type optical fiber structure; Its device size is small; In the micron number magnitude; Be used for the several approximately nm of graphene film thickness of electrooptical modulation, even devices such as supplemantary electrode, substrates, its volume also is far smaller than the size of the about 10mm-100mm of traditional integrated electro-optic modulator.
Three, energy consumption of the present invention is very little, than the integrated electrooptic modulator of tradition, in the modulation system of Graphene-D type optical fiber structure; Electric signal only provides bias voltage; Do not have current loop, do not produce electric heating in theory, the driving voltage of the energy level of atom level modulation simultaneously is also relatively low;
Four, speed of the present invention is faster, and bandwidth is bigger, compares traditional electrooptic modulator, and the bandwidth of graphene film-D type optical fiber structure electro-optic modulation system is not limited by the frequency-selecting of crystalline nature and doped fiber, can realize that visible light arrives far wide area modulation.
Five, loss of the present invention is extremely low, and in the electrooptic modulator of Graphene-D type optical fiber structure, light is after the general single mode fiber input; Propagate along D type optical fiber and graphene film surface; And act on mutually with the form of evanescent wave with it, then by single-mode fiber output light signal, so there is not problem such as device access; The path is short, and Mode Coupling is simple;
Six, the present invention is owing to adopted Graphene-D type optical fiber structure, and its modulation rate that is exceedingly fast is up to more than 10GHz, and the spectral bandwidth of broad is between 1000nm-1700nm.
Description of drawings
Fig. 1 is a D type optical fiber structure synoptic diagram;
Fig. 2 is the graphene-structured synoptic diagram;
Fig. 3 is the three-dimensional structure synoptic diagram of the online electrooptic modulator of graphene film D type optical fiber integrated form of the present invention;
Fig. 4 is the cross section view of the online electrooptic modulator of graphene film D type optical fiber integrated form of the present invention.
Fig. 5 a and Fig. 5 b are the work wave synoptic diagram of the online electrooptic modulator of graphene film D type optical fiber integrated form of the present invention;
Fig. 5 a is modulation preceding electric signal and light signal synoptic diagram;
Fig. 5 b is the light signal synoptic diagram after modulating;
1-D type optical fiber, 11-D type optical fiber polished surface (surface), 12-fiber core, 13-D type fibre cladding, 2-graphene film, 3-gold electrode, 4-low-refraction ultraviolet glue, 5-optical fiber input/output terminal, 6-silicon dioxide substrates among the figure.
Embodiment
Below in conjunction with accompanying drawing and embodiment technical scheme of the present invention is done and to be further described.
As shown in Figure 3; The D type optical fiber (1) of the about 125um of diameter is fixed in the groove of silicon dioxide substrates (6) of about 150um*300um; Go up coating one deck area about 25000um2 single-layer graphene film (2) at D type optical fiber (1), be oppositely arranged pair of gold electrode (3) and one of which is attached to single-layer graphene film (2), another places on the silicon dioxide substrates (6); For protecting whole modulator structure, carry out upper surface with low-refraction ultraviolet glue (4) and apply encapsulation.In practical operation; Utilize the photoconductivity of grapheme material to receive the characteristic of impressed voltage control, the gold electrode (3) through graphene film (2) both sides applies bias voltage, and the light transmission rate of graphene film (2) is controlled; Thereby the evanscent field that influences near the light of D type optical fiber (1) is propagated; Change the transmission light intensity, form modulated pulse, reach the purpose of electrooptical modulation at general single mode fiber (5) output terminal.Device size is small, and in the micron number magnitude, driving voltage is low, is merely the voltage magnitude.The modulation rate that is exceedingly fast is up to more than 10GHz, and the spectral bandwidth of broad is between 1000nm-1700nm.
Fig. 4 is the cross section view of this structure.
D type optical fiber is ground by general single mode fiber and obtains.One section with single-mode fiber is adopted four step rule to remove covering to guarantee the smooth nothing breakage in D type district, has reduced the light scattering of grinding and polishing face.In grinding and polishing, control the insertion loss through the distance of fiber core and polished surface, the luminous energy of therefore overflowing from polished surface is controlled equally.Because the influence of grinding and polishing, the effective refractive index that light conducting is experienced reduces, and finally causes the pattern broadening in D type district.When behind mould field spraying nonlinear material-Graphene dispersion liquid, light can suddenly die under the situation that does not influence transmission and be coupled into the graphene layer that is plated in polished surface, can improve effective active area like this up to several magnitude.Be coupled into graphene layer light how much depend on several factors, comprise the character of the grinding and polishing degree of depth, film thickness and density and film itself etc.Add last layer ultraviolet glue protective seam at last on the graphene layer surface.The operating distance of light conducting and grapheme material is longer, thereby has guaranteed enough nonlinear effects.All optical fibre structure: a lower Graphene concentration threshold promptly can realize optical modulation.
The present invention is " D type optical fiber-graphene film-drive electrode-surface encapsulation " structure.D type optical fiber at the about 125um of diameter of groove internal fixation of silicon dioxide substrates; On D type optical fiber, cover the single-layer graphene film; The gold electrode of the about 200um of size is relatively drawn in the substrate left and right sides, and left side electrode contacts with graphene layer, and the right electrode and silicon dioxide substrates are joined.At last will be in of the ultraviolet glue encapsulation of modulator upper surface with low-refraction.The about 10um of the thickness of whole modulator.Its course of work is that input optical signal in the influence of D type fiber area owing to evanscent field, acts on the graphene film that is coated on D type optical fiber surface after being imported by general single mode fiber mutually.Electrical modulation signal is applied to the both sides of graphene film through gold electrode; Produce bias field; The photoconduction passband of rhythmic change Graphene, bias voltage Graphene when the pact-2V shows as logical light, and Graphene showed as resistance light when bias voltage was about 3V; And then the evanscent field intensity of conducting along graphene film is changed with electrical modulation signal, obtain receiving the light pulse sequence of electric signal modulation at the light output end of general single mode fiber.

Claims (3)

1. online electrooptic modulator of graphene film D type optical fiber integrated form; It is characterized in that: comprise silicon dioxide substrates (6), be arranged on the interior D type optical fiber (1) of silicon dioxide substrates (6) groove, be coated in the graphene film (2) on the D type optical fiber polished surface (11), two metal electrodes (3) that are oppositely arranged on graphene film (2) both sides; Said metal electrode one of them and graphene film layer (2) edge attach; Another and silicon dioxide substrates (6) are joined, and silicon dioxide substrates (6) is provided with the packaging plastic that is used to encapsulate with the face that D type optical fiber (1) forms.
2. the online electrooptic modulator of a kind of graphene film D type optical fiber integrated form according to claim 1, it is characterized in that: said metal electrode (3) two ends are applied with the bias voltage that the light transmission rate of graphene film (2) is controlled.
3. the online electrooptic modulator of a kind of graphene film D type optical fiber integrated form according to claim 1, it is characterized in that: said packaging plastic is low-refraction ultraviolet glue (4).
CN201210067024.XA 2012-03-15 2012-03-15 Integrated type online electro-optic modulator with graphene thin film and D-type optical fiber Expired - Fee Related CN102591041B (en)

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CN102928996A (en) * 2012-10-12 2013-02-13 中国计量学院 Electronic control terahertz wave polarization beam splitter
CN103176294A (en) * 2013-04-02 2013-06-26 浙江大学 All-fiber electro-optical modulator based on graphene materials and method thereof
CN103487953A (en) * 2013-08-20 2014-01-01 中国工程物理研究院流体物理研究所 All-optically controlled terahertz intensity modulator and terahertz intensity modulator
CN104635019A (en) * 2015-03-06 2015-05-20 南京大学 High-sensitivity super-fast optical fiber current sensor based on suspension graphene and manufacturing method thereof
CN105044932A (en) * 2015-07-10 2015-11-11 上海交通大学 Graphene electro-optic modulation device based on photonic crystal nanometer beam resonant cavity
CN105372754A (en) * 2015-11-27 2016-03-02 西北工业大学 Graphene-assisted all-optical driving fiber grating tuner and calibration method
CN106125350A (en) * 2016-08-30 2016-11-16 张家港初恒激光科技有限公司 Graphene electro-optical modulator based on D-type optical fiber and preparation method thereof
CN106125447A (en) * 2016-08-09 2016-11-16 深圳大学 A kind of full photo threshold device based on two-dimensional material saturated absorption and its preparation method and application
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CN107037509A (en) * 2017-06-16 2017-08-11 电子科技大学 A kind of D type ultra-thin glass fiber structures of graphene auxiliary type
CN108761953A (en) * 2018-07-12 2018-11-06 暨南大学 A kind of complete optical fiber polarization control and intensity modulated multifunction device based on graphene
CN108871566A (en) * 2018-05-11 2018-11-23 暨南大学 A kind of integrated graphene photodetector of optical fiber
WO2019047507A1 (en) * 2017-09-05 2019-03-14 深圳市太赫兹科技创新研究院有限公司 Optical fiber laser
CN110879488A (en) * 2019-12-06 2020-03-13 电子科技大学 Novel optical fiber online modulator based on lithium niobate film
CN111189787A (en) * 2020-01-15 2020-05-22 电子科技大学 Hypersensitive gas sensor based on graphene D-shaped optical fiber
CN111751330A (en) * 2020-06-28 2020-10-09 电子科技大学 Plasmon gas sensor based on D-shaped optical fiber graphene heterojunction
CN113009718A (en) * 2019-12-18 2021-06-22 北京交通大学 I-shaped microstructure optical fiber electro-optic modulator based on two-dimensional material coating
CN113359327A (en) * 2021-06-08 2021-09-07 北京交通大学 Surface core graphene electro-optical modulator based on femtosecond laser 3D direct writing technology
CN114279619A (en) * 2021-08-24 2022-04-05 南京大学 Anti-permeation high-sensitivity graphene hydraulic sensor and processing technology thereof

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