CN205942163U - Mach that adopts ridge waveguide is light modulator wafer structure morally once - Google Patents
Mach that adopts ridge waveguide is light modulator wafer structure morally once Download PDFInfo
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- CN205942163U CN205942163U CN201620724898.1U CN201620724898U CN205942163U CN 205942163 U CN205942163 U CN 205942163U CN 201620724898 U CN201620724898 U CN 201620724898U CN 205942163 U CN205942163 U CN 205942163U
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- ridge waveguide
- silicon dioxide
- tantalum oxide
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Abstract
The utility model discloses a mach that adopts ridge waveguide is light modulator wafer structure morally once, covering, lithium niobate film, silica buffer layer, the last covering of silica, tantalum oxide ridge waveguide and travelling wave electrode under silicon substrate, silica. The utility model discloses aim at overcoming exist among the prior art not enough, provide one kind based on silica -based lithium niobate film tantalum oxide ridge waveguide's mach light modulator morally once, realizing that the low -power consumption driven has reduced the size of modulator simultaneously, improved the stability of device, it is simple and convenient to have the manufacture craft, device dimension is little, bend radius is little, stability advantage such as good.
Description
Technical field
This utility model belongs to technical field of photo communication, the Mach once moral light modulation of more particularly, to a kind of employing ridge waveguide
Device chip architecture and its manufacturing process.
Background technology
Integrated optics develops comparatively fast behind proposition in 1969 first as an important branch of modern photoelectron technology.
Flourishing with microelectric technique, the becoming better and approaching perfection day by day of plane machining technology, with crystal or amorphous material as substrate
Fiber waveguide is arisen at the historic moment, and makes people light can be limited in the short space comparable with its wavelength and is studied and utilize.By
It is limited in Medium Wave Guide in light and propagates, propagated in its waveguide by several physical such as the electric light of medium, acousto-optic, magneto-optics
Light be controlled and process.At present, integrated optics oneself begin to take shape, and show in optical communication uniqueness superiority.With
Girl's acid clang photomodulator, photoswitch are the integrated optical device of representative in optical-fibre communications, optical sensing and optical Information Processing
It is widely used, technology is increasingly mature.Many application system elements are integrated on one chip.And with advanced electronics
Automatically control with information processing in conjunction with.Systematic function is greatly improved.Wherein it is used for the general external modulator of band optical fiber,
Optical CATV transmitter and optical fibre gyro multifunction integrated optics chip have reached large-scale commodity production, and due to excellent
Performance and relatively low cost, be in the situation that supply falls short of demand in the international market.Enter today of information age in the mankind,
The LNIbO3 integrated optics technique that high speed information transmission, optical information sensing and information processing aspect have outstanding behaviours will play
Important effect, brings good social benefit and abundant economic benefit.
Mach Zeng De (Mach-Zehnder) manipulator is that the waveguide type electrolyte light based on Mach-Zahnder interference principle is adjusted
Device processed, MZ is made up of two Y-branch devices at two ends and middle two single waveguide modulators.Manipulator is the pass producing optical signal
Key device.In the transmitter of TDM and wdm system, the optical carrier sending from continuous wave (CW) laser instrument enters manipulator,
High-speed data-flow is superimposed on optical carrier thus completing to modulate in the way of driving voltage.But due to material electro-optic coefficient
Less, in Z-direction, the electro-optic coefficient of LiNbO3 is 32pm/V, for ensureing compared with smaller part wave voltage, needs to increase the length of device,
The Mach zehnder modulators size being therefore currently based on Lithium metaniobate is very greatly it is impossible to meet the demand of following miniaturization module, in addition
Driving voltage to be reduced needs to increase length, and because length is too big, therefore Lithium metaniobate cannot realize low driving at present, unfavorable
In reduction power consumption.Photomodulator is one of most important integrated optical device, it can to laser instrument launch light wave amplitude or
Person's phase place is modulated, and so that input signal is applied to and is propagated on carrier wave.The design of travelling-wave modulator light wave and microwave it
Between there is microwave attenuation and phase velocity mismatch, solve how being critically depend on of this two problems designs electrode.In order to obtain simultaneously
Wide bandwidth and low driving power are it is necessary to make the optimization of design of electrode all the time.Problem included in it is not limited only to go
The load mode of wave electrode, simultaneously during High Speed Modulation, the suprabasil optical waveguide loss of Lithium metaniobate also will drop as far as possible
Low, and most important, in order to reach effective modulation length using size as little as possible, need to design specific waveguide junction
Structure, makes the bending radius of waveguide as little as possible, so that the integrated level of device is higher.
Utility model content
For existing problem above, this utility model provides a kind of Mach once moral light modulation of employing ridge waveguide
Device chip architecture, is realizing reducing the size of manipulator while low-power consumption drives, is improve the stability of device, have system
Make simple process, device size is little, and bending radius is little, the advantages of good stability, the Integrated Light based on LNOI platform can be promoted
Road and device stride forward to practical direction, and the research and development for photoelectricity hybrid integrated chip of future generation provide support.
The technical solution of the utility model is：
This utility model provide a kind of Mach of employing ridge waveguide once moral photomodulator chip architecture, including silicon substrate,
Silicon dioxide under-clad layer, LiNbO_3 film, silicon dioxide cushion, silicon dioxide top covering, tantalum oxide ridge waveguide and traveling wave
Electrode, described silicon dioxide under-clad layer is arranged on described silicon substrate, and described LiNbO_3 film is arranged under described silicon dioxide
On covering, described silicon dioxide cushion is in the upper surface of described LiNbO_3 film, and described tantalum oxide ridge waveguide is arranged on
The center upper portion of described silicon dioxide cushion, described traveling wave electrode totally two and it is symmetrical with described tantalum oxide ridge waveguide
It is centrally mounted on described silicon dioxide cushion, described silicon dioxide top covering is coated on described tantalum oxide ridge waveguide and institute
State on traveling wave electrode and it is connected with described silicon dioxide cushion.
Further, the width of described tantalum oxide ridge waveguide is 1 μm～5 μm, and it is highly 200nm～400nm.
Further, described traveling wave electrode is made using Au, and it is highly equal with described tantalum oxide ridge waveguide.
Further, described LiNbO_3 film thickness is 0.5 μm～5 μm.
Due to employing above-mentioned technology, be allowed to compared with prior art specific positive beneficial effect is this utility model：
1st, this utility model is being realized reducing the size of manipulator while low-power consumption drives.
2nd, this utility model improves the stability of device, has that processing technology is easy, device size is little, bending radius
The advantages of little, good stability.
3rd, this utility model can promote integrated optical circuit based on LNOI platform and device to stride forward to practical direction, under being
The research and development of generation photoelectricity hybrid integrated chip provide and support.
4th, this utility model structure is simple, safe and reliable, has good market prospect.
5th, this utility model good product performance, long service life.
Brief description
Fig. 1 structural representation of the present utility model；
Fig. 2 encapsulating structure of the present utility model schematic diagram；
Fig. 3 modulation principle of the present utility model schematic diagram.
In figure：1- silicon substrate, 2- silicon dioxide under-clad layer, 3- LiNbO_3 film, 4- silicon dioxide cushion, 5- titanium dioxide
Silicon top covering, 6- tantalum oxide ridge waveguide, 7- traveling wave electrode.
Specific embodiment
The utility model is described in further detail with reference to the accompanying drawings and examples, and embodiment of the present utility model includes
But it is not limited to the following example.
Embodiment：To achieve these goals, the technical solution adopted in the utility model is as follows：
As shown in figure 1, this utility model provides a kind of Mach of employing ridge waveguide once moral photomodulator chip architecture, bag
Include silicon substrate 1, silicon dioxide under-clad layer 2, LiNbO_3 film 3, silicon dioxide cushion 4, silicon dioxide top covering 5, tantalum oxide
Ridge waveguide 6 and traveling wave electrode 7, silicon dioxide under-clad layer 2 is arranged on silicon substrate 1, and LiNbO_3 film 3 is arranged on silicon dioxide
On under-clad layer 2, silicon dioxide cushion 4 is in the upper surface of LiNbO_3 film 3, and tantalum oxide ridge waveguide 6 is arranged on titanium dioxide
The center upper portion of silicon buffer layer 4, traveling wave electrode 7 totally two and it is arranged on dioxy with tantalum oxide ridge waveguide 6 for symmetrical centre
On SiClx cushion 4, silicon dioxide top covering 5 is coated on tantalum oxide ridge waveguide 6 and traveling wave electrode 7 and itself and silicon dioxide
Cushion 4 is connected.
This utility model is further arranged to：The width of tantalum oxide ridge waveguide 6 is 1 μm～5 μm, and it is highly
200nm～400nm.
This utility model is further arranged to：Traveling wave electrode 7 is made using Au, and its highly with tantalum oxide ridge waveguide 6
Equal.
This utility model is further arranged to：LiNbO_3 film 3 thickness is 0.5 μm～5 μm.
By adopting technique scheme, as shown in figure 3, its modulation voltage is as follows with the relation of required modulation length：
Vpt=λ d/ (2 Γ n03·γ33·L)
L=λ d/ (2 Γ n03·γ33·Vpt)
Wherein, VptFor half-wave voltage, λ is wavelength, and Γ overlaps the factor, n for electric field03For refractive index, γ33For electro-optic coefficient,
L is traveling wave electrode length, and d is electric-field path length, and described L determines the length of described manipulator.Under normal circumstances, this practicality is new
The electrode spacing of type is 7 μm, and half-wave voltage reaches 4V.cm, according to the micro-loop vibration of technic index described in the utility model preparation
Device, its micro-loop diameter can reach 300 μm, and quality factor are in 7.0x104More than.
Above an embodiment of the present utility model is described in detail, but described content is only of the present utility model
Preferred embodiment is it is impossible to be considered for limiting practical range of the present utility model.All made according to this utility model application range
Impartial change and improvement etc., all should still belong within patent covering scope of the present utility model.
Claims (4)
1. a kind of Mach of employing ridge waveguide once moral photomodulator chip architecture it is characterised in that：Including silicon substrate, titanium dioxide
Silicon under-clad layer, LiNbO_3 film, silicon dioxide cushion, silicon dioxide top covering, tantalum oxide ridge waveguide and traveling wave electrode, institute
State silicon dioxide under-clad layer to be arranged on described silicon substrate, described LiNbO_3 film is arranged on described silicon dioxide under-clad layer,
Described silicon dioxide cushion is in the upper surface of described LiNbO_3 film, and described tantalum oxide ridge waveguide is arranged on described dioxy
The center upper portion of SiClx cushion, described traveling wave electrode totally two and its with described tantalum oxide ridge waveguide for symmetrical centre install
On described silicon dioxide cushion, described silicon dioxide top covering is coated on described tantalum oxide ridge waveguide and described traveling wave electricity
Extremely go up and it is connected with described silicon dioxide cushion.
2. the Mach once moral photomodulator chip architecture of a kind of employing ridge waveguide according to claim 1, its feature exists
In：The width of described tantalum oxide ridge waveguide is 1 μm～5 μm, and it is highly 200nm～400nm.
3. the Mach once moral photomodulator chip architecture of a kind of employing ridge waveguide according to claim 1, its feature exists
In：Described traveling wave electrode is made using Au, and it is highly equal with described tantalum oxide ridge waveguide.
4. the Mach once moral photomodulator chip architecture of a kind of employing ridge waveguide according to claim 1, its feature exists
In：Described LiNbO_3 film thickness is 0.5 μm～5 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620724898.1U CN205942163U (en) | 2016-07-11 | 2016-07-11 | Mach that adopts ridge waveguide is light modulator wafer structure morally once |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620724898.1U CN205942163U (en) | 2016-07-11 | 2016-07-11 | Mach that adopts ridge waveguide is light modulator wafer structure morally once |
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| Publication Number | Publication Date |
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| CN205942163U true CN205942163U (en) | 2017-02-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620724898.1U Expired - Fee Related CN205942163U (en) | 2016-07-11 | 2016-07-11 | Mach that adopts ridge waveguide is light modulator wafer structure morally once |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110161625A (en) * | 2019-05-17 | 2019-08-23 | 上海交通大学 | The integrated method of silicon substrate LiNbO_3 film electrooptic modulator array |
| CN111308612A (en) * | 2020-04-28 | 2020-06-19 | 聊城大学 | Method for preparing inverse MMI type waveguide Mach-Zehnder interferometer |
| CN111880267A (en) * | 2020-08-17 | 2020-11-03 | 兰州大学 | Silicon nitride-assisted lithium niobate thin film waveguide-based fully-integrated optical transceiving system |
| CN114325933A (en) * | 2022-03-07 | 2022-04-12 | 之江实验室 | Lithium niobate thin film broadband mode filter based on graphene |
| US11300732B2 (en) | 2020-01-29 | 2022-04-12 | Psiquantum, Corp. | Low loss high efficiency photonic phase shifter with dielectric electrodes |
| US11391891B2 (en) | 2020-03-03 | 2022-07-19 | Psiquantum, Corp. | Fabrication method for photonic devices |
| WO2023035606A1 (en) * | 2021-09-10 | 2023-03-16 | 苏州湃矽科技有限公司 | Electro-optic modulator |
| WO2023035604A1 (en) * | 2021-09-10 | 2023-03-16 | 苏州湃矽科技有限公司 | Electro-optic modulator and preparation method therefor |
-
2016
- 2016-07-11 CN CN201620724898.1U patent/CN205942163U/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110161625A (en) * | 2019-05-17 | 2019-08-23 | 上海交通大学 | The integrated method of silicon substrate LiNbO_3 film electrooptic modulator array |
| US11300732B2 (en) | 2020-01-29 | 2022-04-12 | Psiquantum, Corp. | Low loss high efficiency photonic phase shifter with dielectric electrodes |
| US11573375B2 (en) | 2020-01-29 | 2023-02-07 | Psiquantum, Corp. | Low loss high efficiency photonic phase shifter with dielectric electrodes |
| US11953729B2 (en) | 2020-01-29 | 2024-04-09 | Psiquantum, Corp. | Low loss high efficiency photonic phase shifter with dielectric electrodes |
| US11391891B2 (en) | 2020-03-03 | 2022-07-19 | Psiquantum, Corp. | Fabrication method for photonic devices |
| TWI779506B (en) * | 2020-03-03 | 2022-10-01 | 美商沛思量子公司 | Fabrication method for photonic devices |
| CN111308612A (en) * | 2020-04-28 | 2020-06-19 | 聊城大学 | Method for preparing inverse MMI type waveguide Mach-Zehnder interferometer |
| CN111880267A (en) * | 2020-08-17 | 2020-11-03 | 兰州大学 | Silicon nitride-assisted lithium niobate thin film waveguide-based fully-integrated optical transceiving system |
| WO2023035606A1 (en) * | 2021-09-10 | 2023-03-16 | 苏州湃矽科技有限公司 | Electro-optic modulator |
| WO2023035604A1 (en) * | 2021-09-10 | 2023-03-16 | 苏州湃矽科技有限公司 | Electro-optic modulator and preparation method therefor |
| CN114325933A (en) * | 2022-03-07 | 2022-04-12 | 之江实验室 | Lithium niobate thin film broadband mode filter based on graphene |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170208 Termination date: 20170711 |