CN102589761A - 力传感器 - Google Patents
力传感器 Download PDFInfo
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- CN102589761A CN102589761A CN201110462518.3A CN201110462518A CN102589761A CN 102589761 A CN102589761 A CN 102589761A CN 201110462518 A CN201110462518 A CN 201110462518A CN 102589761 A CN102589761 A CN 102589761A
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2206—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports
- G01L1/2231—Special supports with preselected places to mount the resistance strain gauges; Mounting of supports the supports being disc- or ring-shaped, adapted for measuring a force along a single direction
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- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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Abstract
本发明公开了一种力传感器(10)。在一个说明性实施例中,力传感器(10)可以包括安装到基底(12)的感测模(20)和用于把外力传递到感测模(20)的传动组件。感测模(20)可以包括膜片(22)和定位在膜片(22)上的一个或多个感测元件(例如,压阻元件)。所述传动组件可以包括与膜片(22)相接触的球形构件或对象(40)、具有耦接到球形对象(40)的第一端(42)和耦接到按钮构件(44,644)的第二端(43)的销构件(41)。所述传动装置组件可以经由销构件(41)和球形构件把施加到按钮构件(44,644)的力传递到膜片(22)。
Description
技术领域
本公开内容大体上涉及传感器,并且更特别涉及力传感器,其用于感测施加到所述传感器的力。
背景技术
力传感器常常被用来感测施加到传感器的外力并且提供表示所施加的力的输出信号。这样的传感器可以被用在包括医疗应用在内的很多种应用中。示例医疗应用包括在对例如肾透析机、给药***、血液学装置、输液泵、进食器、换气装置、以及其他医疗装置的医疗装置控制中的用途。力传感器一般也用在非医疗应用中。
发明内容
本公开内容大体上涉及传感器,并且更特别涉及力传感器,其用于感测施加到所述传感器的力。在一个说明性实施例中,力传感器包括安装到基底的感测模、以及用于把外力传递到感测模的传动组件。该感测模包括膜片和定位在该膜片上的一个或多个感测元件(例如,压阻元件)。所述传动组件可以包括与膜片相接触的球形或其他形状的构件或对象,诸如球轴承,具有耦接到球形对象的第一端和耦接到按钮构件的第二端的销构件。所述传动装置组件可以被配置成经由销构件和球形(或其他形状的)构件把施加到按钮构件的力传递到膜片。在一些情况中,球形构件的外表面的仅一部分在形状上是球形的。而且,在一些情况中,力传感器还可以包括定位在基底上的壳体构件。所述壳体构件可以限定环绕感测模的腔,并且包括被尺寸成接纳通过其的销构件的开口。
在一些实施例中,有时使用粘合剂,可以朝着基底来安装感测模的前侧(具有在其上形成的感测元件的一面)。在一些实例中,所述粘合剂可以包括一种图案(pattern)的导电粘合剂和非导电粘合剂以选择性地将感测模的接合焊盘电气连接到在所述基底上的接合焊盘。在此实例中,可以不需要引线接合来将感测模电气连接到所述基底,这可以帮助增加力传感器的可靠性和/或耐用性。
在一些情况中,力传感器还可以包括安装在所述基底上与感测模电连通的信号调节电路。信号调节电路可以被配置成接收来自感测模的一个或多个电信号,并且对所述信号进行调节从力传感器提供经调节的输出信号。
还公开了一种制造力传感器的说明性方法。说明性方法可以包括将感测模的前侧倒装式安装到基底的第一侧,其中感测模包括膜片和一个或多个的感测元件。该方法还可以包括提供与膜片的后侧(例如,感测模的被蚀刻以形成膜片的一侧)相接触的传动组件,其中所述传动组件被配置成把外力传递到膜片。所述传动组件可以包括与膜片的后侧相接触的球形构件、具有连结所述球形构件的第一端的销构件、以及连结所述销构件的第二端的按钮构件。在一些情况中,该方法还可以包括将壳体构件定位在基底的第一侧上以环绕所述感测模和球形构件限定第一腔,其中所述销构件被配置成通过壳体构件中的开口延伸出去。该方法可以还包括将信号调节电路安装到基底,与感测模电连通,其中信号调节电路可以被配置成接收来自感测模的电信号,并且对该信号进行调节以从力传感器提供经调节的输出信号。
提供了前面的概述以便利对本公开内容独有的一些创新性特征的理解,并且该概述意图不是完整的描述。通过将整个说明书、权利要求书、附图以及摘要作为一个整体可以获得对本公开的完整理解。
附图说明
考虑到结合附图对本公开内容的各种说明性实施例的下列详细描述,可以更完全地理解本公开内容,其中:
图1是说明性力传感器的截面示意图;
图2是包括信号调节电路的说明性力传感器的截面示意图;
图3是包括信号调节电路的另一说明性力传感器的截面示意图;
图4是可以被用来将感测模接合到基底的说明性粘合剂图案的示意图;
图5是另一说明性力传感器的截面示意图;以及
图6是另一说明性力传感器的截面示意图。
具体实施方式
应当参考附图来阅读下列描述,其中,遍及这若干附图,同样的附图标记指示同样的元素。详细描述和附图示出了意味着说明本公开内容的若干实施例。
图1是力传感器10的说明性实施例的截面图。在该说明性实施例中,力传感器10包括使用粘合剂24、焊料等安装到封装基底12的传感元件或感测模(die)20。在一些实施例中,感测模20可以是使用硅晶片和适合的制造技术制造的微机械传感器元件。在此示例中,感测模20可以具有一个或多个感测元件,诸如压阻感测部件,和/或使用适合的制造或印制技术形成的其他电路(例如,配平电路、信号调节电路等)。在一些情况中,感测模20可以包括感测膜片22,其包括形成在其上用于感测感测膜片22的挠曲的一个或多个感测元件。在一些情况中,感测膜片22可以通过对硅片进行背侧蚀刻来制造,然而,依据需要可以使用任何适合工艺。
当被提供时,压阻部件可以被配置成具有根据施加的机械应力(例如,感测膜片22的挠曲)而变化的电阻。在一些情况中,压阻部件可以包括硅压阻材料;然而,其他预想到的是如果需要则可以使用非硅材料。在惠斯通电桥配置(全桥或半桥)中可以连接压阻部件。将理解的是压阻部件仅是可以使用的感测元件的一个示例,并且预想到的是依据需要可以使用任何其他适合的感测元件。
在该说明性实施例中,封装基底12可以包括陶瓷材料,然而,预想到的是依据需要可以使用其他适合的材料(例如,PCB)。在一些情况中,可以使用粘合剂24把感测模20安装到基底12,所述粘合剂24诸如硅、RTV、硅环氧树脂、软质环氧树脂、或者规则或硬质环氧树脂。在一些实施例中,粘合剂24可以包括导电粘合剂、非导电粘合剂、或者导电和非导电粘合剂的组合。当被提供时,可以以将感测模20的接合焊盘电气连接到基底12上的接合焊盘的图案来提供导电和非导电粘合剂的组合。无论如何,预想到的是可以使用任何其他适合的接合机制(例如,焊料、低共熔物等)把感测模20安装到基底12。
如图1中所示,可以在它们之间没有所提供的(一个或多个)介入隔离层或基底的情况下用粘合剂24把感测模20直接安装到基底12,但这不是必需的。在一些实例中,在力传感器10中如果需要则可以在感测模20和基底12之间提供隔离层或玻璃基底(未示出)。在一些实施例中,感测模20可以包括硅材料而封装基底12可以包括氧化铝陶瓷,它们可以具有相似的温度膨胀系数。然而,如果需要,感测模20和封装基底12可以由其他适合材料制成。
在一些情况中,感测模20可以安装在封装基底12的开口26之上,该开口26被定尺寸成将感测膜片22暴露给封装基底12的底侧。在此实例中,力传感器10的背侧可以具有基准压力,其可以经由开口24被传递到感测膜片22,但这不是必需的。
在图1的说明性实施例中,感测模20是使用作为接合材料的粘合剂24被倒装式(flip chip)安装到基底12。换句话说,感测模20的顶侧(即感测模20具有感测元件的一侧)被显示为向下(在图1中所示出的方向上)朝向基底12的顶侧(在图1中所示出的方向上),并且用粘合剂24安装到其上。在此示例中,粘合剂24(例如,导电和非导电粘合剂的组合)可以被配置成将感测模20的接合焊盘电气连接到基底12上的一个或多个接合焊盘或迹线导体而无需引线接合。在另一示例中,依据需要,感测模20可以使用凸块接合、焊锡球栅格阵列、或任何其他适合技术被倒装式安装到基底12。在一些情况中,预想到的是可以用粘合剂24将感测模20的背侧(例如,感测模20被蚀刻以形成膜片22的一侧)安装到基底12。在此实例中,如果需要,可以提供引线接合(未示出)来将感测模20顶侧上的接合焊盘电气连接到在基底12上的接合焊盘。
在说明性实施例中,力传感器10还可以包括用于将外力传递到感测模20的传动组件。如图1中所示,传动组件可以包括球形(或其他形状的)对象40、延伸部41、以及按钮44。可以认识到,根据替换实施例,可以利用其他类型的传动装置,诸如像可滑动安装的柱杆或轴、除了球形对象之外的点接触型部件、“T”形传输机构。在一些情况中,对象40外表面的仅一部分在形状上可以是球形的。
在图1中示出的说明性实施例中,球形对象40可以包括不锈钢或其他适合的金属。在一些实例中,球形对象40可以是球轴承。然而,预想到的是,如果需要,可以使用包括基于聚合物的对象在内的其他通常球形的元件。如图1中所示,球形对象40可以与感测模20的感测膜片22接触。延伸部41、或销可以被配置成包括第一端42和第二端43,以及在它们之间延伸的长度。延伸部41的第一端42可以以任何适合的方式连结到,以及在一些情况中可以固定或附着到球形对象40,所述任何适合的方式例如包括将部42焊接或粘附地固定到球形对象40、将端42压配合到形成在球形对象40中的孔中、或者将端42固定到球形对象40的任何其他适合方式。在一些情况中,延伸部41的第一端42可以是通常圆锥形状或以其它方式削尖的,并且可以连结球形对象40中的开口。然而,预想到的是依据需要,端42可以是平坦的或具有另一形状。虽然球形对象40和延伸部41被显示为单独的构件,但是预想到的是球形对象40和延伸部41可以整体地形成。
如图1中所示,按钮44可以连结或以其它方式固定到延伸部41的第二端43。例如,延伸部41的第二端43(其可以是通常圆锥形状的)可以***到按钮44的开口47中并且以任何适合的方式固定于其内。然而,预想到的是依据需要,端42可以是平坦的或具有另一形状。当通常圆锥形状的时,按钮44或许能够相对于延伸部41的第二端43转动,这可以帮助增加力传感器10的可重复性,而与施加的力的方向无关。当延伸部41的第一端42是球形形状时,这也可能呈现。而且,例如,销41的第二端43可以使用粘合剂、焊料、焊接、压配合、或者任何其他适合技术进行固定。如所示出的,按钮44可以具有与感测模20相反的表面48,该表面48可以被配置成接收力。在一些情况中,表面48可以是通常平坦或平面的,然而,预想到的是在其他实施例中,表面48可以成曲形(例如凹或凸)或者可以被形成为包括用于连结力传递对象的其他表面特征。例如,按钮44的表面48可以被成轮廓为连结柔性管,诸如用在医疗工业中的管。
在图1的说明性实施例中,可以提供力传感器10的盖或保护壳体14。保护壳体14可以限定通常以30示出的用于容纳感测模20的腔。如所图示的,保护壳体14设置在基底12的顶侧(在图1中示出的方向)上。在这样的配置的情况下,保护壳体14可以帮助保护感测模20的感测元件。在一些情况中,保护壳体14可以例如由塑料、聚酰胺、陶瓷、或任何其他适合的材料制成。虽然未示出,但是预想到的是如果需要,可以把底部保护壳体(未示出)提供在基底12的底面上。当这样提供时,底部保护壳体可以限定腔,所述腔限定用于感测膜片的基准压力,或者可以包括用于将感测元件(例如,感测膜片22的底侧)暴露给第二输入压力的压力开口。在一些情况中,两个保护壳体14可以附着到基底12,其中,每侧上具有相同或基本上相同的“占地面积”,但这不是必须的。
在说明性实施例中,保护壳体14可以被配置成包括用于延伸部41的开口36和向内突出主体45,其限定了用于把传动组件固定就位的室,所述传动组件即球形对象40和延伸部41。如所示出的,主体45被形成为保护壳体14的一部分,然而,依据需要,它可以单独地形成。主体45可以相对于球形对象40的尺寸被精确地形成以便在球形对象40和感测膜片22之间保持相对恒定的接触点。虽然不是必需的,但是主体45可以整个向下延伸到基底12以帮助隔离感测元件20。
在图1的说明性实施例中,可以使用适合的粘合剂或任何其他适合的接合机制(例如焊料、低共熔物等)把保护壳体14附着于封装基底12。如图1中所示,保护壳体14可以限定开口36,其提供了从保护壳体外部的环境到压力感测模22的入口。该开口可以根据延伸部来定尺寸以便在通常竖直(在如图1中所示的方向上)的方向上保持球形对象40和延伸部41。
虽然未示出,但是传感器组件10可以包括在基底12上的一个或多个电导线,其可以电气连接到压力感测模20用来接收与由感测模20(例如感测膜片22)感测的压力或力相对应的一个或多个信号。在一些情况中,该一个或多个电导线可以包括金属,然而依据需要,可以使用任何适合的材料,诸如导电聚合物。
在操作中,当电流施加到压阻感测元件(例如,到压阻感测元件的惠斯登电桥配置)时,可以生成电输出信号,其与膜片22的挠曲程度或施加到力传感器10的力成比例。传动组件可以被配置成将外力传递到感测膜片22,从而使感测膜片22挠曲,并且改变压阻感测元件的电阻。在一些实例中,在感测膜片22和球形对象40之间的接触点某种程度上将确定输出电信号的量,其中,对于相同的施加力,不同的接触点产生不同的输出信号。通过使用壳体的主体45、以及因此在感测膜片22上的接触点,限制球形对象40的移动,对于给定的施加外力,可以达到输出电信号的提高的可重复性。
在一些应用中,通过检测力,力传感器10可以被用来确定介质通过管子的流速。例如,图1的力传感器可以被用来感测介质作用于管的内壁上的压力的量,并且可以输出与所作用的压力相对应的电信号。作用于管的内壁上的压力的量可以与介质通过管子的流速相关。同样,力传感器10的电输出可以转换为介质通过管的流速。
图2是包括信号调节电路127的说明性力传感器110的截面图。力传感器110可以与图1中所示的力传感器10相似,但是还包括安装在基底12上的信号调节电路127。如图2中所示,信号调节电路127可以提供在单独的模上或其他电子设备上,并且可以安装在由保护壳体116形成的腔130中。在一些情况中,信号调节电路127可以包括微处理器、微控制器、和/或ASIC(专用集成电路)。在一些情况中,可以使用粘合剂131或任何其他适合的接合机制(例如,焊料、低共熔物等)把信号调节电路127安装到基底112。如所示出的,可以邻近于感测模20把信号调节电路127固定到基底12。信号调节电路127可以经由基底12上的迹线导体,以及在一些情况中经由接合引线129,电气连接到感测模20。基底12上的迹线导体可以连接到力传感器110的连接器、导线、接合焊盘或端子(未示出)。在一些情况中,预想到的是如果需要,可以以包括直接模到模引线接合在内的其它方式把信号调节电路127电气连接到感测模20。
当被提供时,信号调节电路127可以包括接收来自感测模20的输出信号的电路,并且可以在响应中生成输出信号,其幅度表示施加到感测模20的力的幅度。信号调节电路127可以调节感测模的输出信号以校正可重复的变化,例如偏移、灵敏度、非线性度、温度效应、和/或其他变化。信号调节电路127可以调节输出信号以补偿电特性的温度依赖的变化和/或解决电特性的改变和力的幅度的对应改变之间的非线性关系。
图3是包括信号调节电路127的力传感器210的另一说明性实施例的截面图。力传感器210在许多方面可以与如图2中所示的力传感器110相似,但是力传感器210包括壳体(例如,保护壳体216),其限定分别用于容纳感测模20和信号调节电路127的第一腔240和第二腔240。在说明性实施例中,保护壳体216可以包括一个或多个突出部245和246,其被配置成连结和/或密封到基底12以将腔230和240互相隔离。在这样的配置的情况下,信号调节电路127可以与感测模20物理隔离,以便在一些情况中帮助保护信号调节电路免于被污染和/或提供更鲁棒的传感器封装。
在说明性实施例中,保护壳体216可以被形成为或以其它方式被制造成包括形成在其下侧的凹陷部以限定用于容纳信号调节电路127的腔230。保护壳体216还可以被形成为或以其它方式被制造成具有限定用于容纳感测模20和传动组件的腔240的凹陷部和/或突出部。诸如245和246之类的突出部可以延伸到基底12并且接合、固定和/或密封到该基底12。预想到的是依据需要,可以使用用于形成腔230和240的其他方式或技术。
图4是可以用来将感测模20接合到基底12的说明性粘合剂图案的示意图。如图4中所示,感测模20可以被配置成包括用于电气连接到基底12上的导电迹线或接合焊盘的一个或多个接合焊盘412。接合焊盘412可以电气连接到感测模20上的感测元件(例如,压电电阻器)和/或其他电路(例如,配平、放大等)。如所示出的,存在四个接合焊盘412,然而,这仅仅是说明性的,并且预想到的是依据需要,可以使用任何适合数目的接合焊盘412。
在说明性实施例中,粘合剂可以包括导电粘合剂416和非导电粘合剂414,它们被图案化成将感测模20电气地和机械地附着到基底12(例如,导电迹线)。如图4中所示,导电粘合剂416和非导电粘合剂414可以在感测模20上以交替图案的形式进行配置。在此示例中,导电粘合剂416可以至少部分地施加在每个或该一个或多个接合焊盘412之上以将接合焊盘412电气连接到基底12的接合焊盘。非导电粘合剂414可以被施加在相邻导电粘合剂416之间以提供接合焊盘之间的电隔离。在所图示的示例中,在示出四个接合焊盘412的情况下,可以存在导电粘合剂416的四个施用(针对每个接合焊盘412一个),每个由非导电粘合剂414分隔。然而,这只是一个示例,并且预想到的是可以使用其他粘合剂图案和数目的导电和非导电粘合剂的施用。
在说明性实施例中,预想到的是可以使用任何适合的导电粘合剂和非导电粘合剂。一个示例非导电粘合剂是RTV6424,其可以从纽约Waterford的Momentive Performance Material公司获得。一个示例导电粘合剂是SDC5000,其可以从纽约Waterford的Momentive Performance Material公司获得。这些只是示例,并且预想到的是可以使用任何其他适合的导电粘合剂和非导电粘合剂。
在一些实施例中,导电粘合剂416和非导电粘合剂414可以以任何适合的厚度来施用以将感测模20机械地附着到基底12。例如,依据需要,导电粘合剂416和非导电粘合剂414可以具有在大约0.01毫米到大约1.0毫米的范围的厚度、大约0.05毫米到大约0.75毫米的范围的厚度、大约0.05毫米到大约0.5毫米的范围的厚度、大约0.10毫米到大约0.25毫米的范围的厚度、或者任何其他范围的厚度。
虽然图4示出为具有施用到感测模20的导电粘合剂416和非导电粘合剂414,但是可以理解如果需要,可以将导电粘合剂416和非导电粘合剂414施用到基底12和/或感测模20。此外,在将感测模20安装到基底12之前,示出了导电粘合剂416和非导电粘合剂414的说明性图案,或者,换句话说,如何可以最初施用导电粘合剂416和非导电粘合剂414。虽然在图4中没有明确示出,但在一些情况中,导电粘合剂和非导电粘合剂互相重叠,或者以其它方式环绕感测模20的周界共同地提供连续的粘合剂图案。如果需要,环绕感测模20的周界这可以帮助一直提供感测模20和基底12之间的密封。
图5和6是其他说明性力传感器的截面示意图。如图5中所示,力传感器510可以与力传感器10相似,但可以具有延伸部541,其具有第一端542,该第一端542可以是通常圆锥形状的或以其它方式削尖的。通常圆锥形状的第一端542可以连结球形对象541中的对应开口543。
如图6中所示,力传感器610可以与前述力传感器相似,但是可以具有直接连结到球形对象640而没有任何延伸部的按钮644。在此实施例中,按钮构件644可以包括具有通常圆锥或削尖的端的突出部645,其被配置成连结球形对象640中的开口646。然而,预想到的是依据需要,突出部645可以是平坦的或具有另一形状。此外,预想到的是按钮644可以以任何适合方式连结球形对象640,所述任何适合方法例如包括焊接、粘合地固定、或将突出部643连结到球形对象640、将突出部645压配合到在球形对象640中形成的孔中,或者在有或没有突出部645的情况下按钮构件644到球形对象640的任何其他适合方式。
虽然未示出,但是预想到的是力传感器510和610可以包括前述力传感器的任何其他特征。例如,如果需要,力传感器510和610可以包括信号调节电路。
已经因此描述了本公开内容的优选实施例,本领域的技术人员将容易认识到,在于此所附连的权利要求书的范围内还可以制作和使用其他实施例。在前面描述中已经阐述了由此文档覆盖的本公开内容的众多优点。然而,应该理解本公开内容在许多方面仅为说明性的。在不超出本公开内容的范围的情况下,可以在细节方面,特别在部件的形状、尺寸和布置方面,进行改变。当然本公开内容的范围以表达所附权利要求书的语言来限定。
Claims (10)
1.一种力传感器(10),其包括:
包括第一侧和第二侧的基底(12);
安装在所述基底(12)的所述第一侧上的感测模(20),所述感测模(20)包括膜片(22)和定位在所述膜片(22)上的一个或多个感测元件;以及
被配置成把外力传递到所述感测模(20)的所述膜片(22)的传动装置组件,所述传动装置组件包括:
与所述膜片(22)相接触的通常球形构件;
按钮构件(44);和
具有耦接到所述通常球形构件的第一端(42)和耦接到所述按钮构件(44)的第二端(43)的延伸部(41);
其中所述感测模(20)被配置成输出指示施加到所述力传感器(10)的外力的电信号。
2.根据权利要求1所述的力传感器(10),还包括用于将所述感测模(20)的前侧接合到所述基底(12)的所述第一侧的粘合剂(131)。
3.根据权利要求2所述的力传感器(10),其中所述感测模(20)的所述前侧包括一个或多个接合焊盘(412),所述一个或多个接合焊盘(412)电气连接到所述基底(12)上的一个或多个接合焊盘(412)而无需引线接合。
4.根据权利要求2所述的力传感器(10),其中所述粘合剂(131)包括一种图案的导电粘合剂(416)和非导电粘合剂(414)。
5.根据权利要求1所述的力传感器(10),其中所述基底(12)包括在所述基底(12)的所述第一侧和所述第二侧之间延伸的基底开口(26),其中所述膜片(22)定位在所述基底开口(26)之上。
6.根据权利要求1所述的力传感器(10),还包括安装在所述基底(12)的所述第一侧上与所述感测模(20)电连通的信号调节电路(127),其中所述信号调节电路(127)被配置成接收来自所述感测模(20)的电输出信号并且对所述电输出信号进行调节以从所述力传感器(10)提供经调节的输出信号。
7.根据权利要求6所述的力传感器(10),还包括:
定位在所述基底(12)所述的第一侧上的壳体构件,所述壳体构件环绕所述感测模(20)限定第一腔(240),其中所述壳体构件包括定位在所述感测模(20)之上的开口(36)。
8.根据权利要求7所述的力传感器(10),其中所述壳体构件限定所述第一腔(240)和第二腔(230),其中所述感测模(20)处于所述第一腔(240)中而所述信号调节电路(127)处于所述第二腔(230)中。
9.一种制造力传感器(10)的方法,其包括:
将感测模(20)的前侧倒装式安装到基底(12)的第一侧,其中所述感测模(20)包括膜片(22)和一个或多个感测元件,其中所述感测元件邻近所述感测模(20)的前侧;和
提供与所述膜片(22)的后侧相接触的传动组件,其中所述传动组件被配置成把外力传递到所述膜片(22),所述传动组件包括对象(40)、具有耦接到所述对象(40)的第一端(42)的销构件(41)以及耦接到所述销构件(41)的第二端(43)的按钮构件(44),其中,所述对象(40)的外表面(48)的至少一部分具有与膜片(22)的后侧相接触的球形形状。
10.根据权利要求9所述的方法,还包括将壳体构件定位在所述基底(12)的所述第一侧上以环绕所述感测模(20)和所述球形构件形成第一腔(240),其中所述销构件(41)被配置成延伸通过所述壳体构件中的开口(36)。
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103698067A (zh) * | 2012-09-27 | 2014-04-02 | 霍尼韦尔国际公司 | 柔性平台组件结构上的机械联接的力传感器 |
CN104634500A (zh) * | 2013-11-14 | 2015-05-20 | 霍尼韦尔国际公司 | 使用整体力偏压以便改进线性的力传感器 |
CN105310669A (zh) * | 2014-06-16 | 2016-02-10 | 北京敏易联传感技术有限公司 | 一种应用在血压计中的mems接触式力传感器及其制备方法 |
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Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9308307B2 (en) | 2007-09-13 | 2016-04-12 | Fresenius Medical Care Holdings, Inc. | Manifold diaphragms |
US8114288B2 (en) | 2007-11-29 | 2012-02-14 | Fresenlus Medical Care Holdings, Inc. | System and method for conducting hemodialysis and hemofiltration |
US8597505B2 (en) | 2007-09-13 | 2013-12-03 | Fresenius Medical Care Holdings, Inc. | Portable dialysis machine |
US8105487B2 (en) | 2007-09-25 | 2012-01-31 | Fresenius Medical Care Holdings, Inc. | Manifolds for use in conducting dialysis |
US9358331B2 (en) | 2007-09-13 | 2016-06-07 | Fresenius Medical Care Holdings, Inc. | Portable dialysis machine with improved reservoir heating system |
US9199022B2 (en) | 2008-09-12 | 2015-12-01 | Fresenius Medical Care Holdings, Inc. | Modular reservoir assembly for a hemodialysis and hemofiltration system |
US8240636B2 (en) | 2009-01-12 | 2012-08-14 | Fresenius Medical Care Holdings, Inc. | Valve system |
AU2009302327C1 (en) | 2008-10-07 | 2015-09-10 | Fresenius Medical Care Holdings, Inc. | Priming system and method for dialysis systems |
CN102639201B (zh) | 2008-10-30 | 2015-07-08 | 弗雷塞尼斯医疗保健控股公司 | 模块化便携透析*** |
US9003899B2 (en) | 2012-03-23 | 2015-04-14 | Honeywell International Inc. | Force sensor |
US8806964B2 (en) * | 2012-03-23 | 2014-08-19 | Honeywell International Inc. | Force sensor |
US9003897B2 (en) | 2012-05-10 | 2015-04-14 | Honeywell International Inc. | Temperature compensated force sensor |
US9164003B2 (en) * | 2012-10-11 | 2015-10-20 | Honeywell International Inc. | Force sensor with mechanical over-force transfer mechanism |
US9201036B2 (en) | 2012-12-21 | 2015-12-01 | Fresenius Medical Care Holdings, Inc. | Method and system of monitoring electrolyte levels and composition using capacitance or induction |
US9157786B2 (en) | 2012-12-24 | 2015-10-13 | Fresenius Medical Care Holdings, Inc. | Load suspension and weighing system for a dialysis machine reservoir |
US9116057B2 (en) * | 2013-02-27 | 2015-08-25 | Honeywell International Inc. | Integrated reference vacuum pressure sensor with atomic layer deposition coated input port |
CN105493005A (zh) | 2013-08-23 | 2016-04-13 | 苹果公司 | 遥控设备 |
US10032592B2 (en) * | 2013-08-23 | 2018-07-24 | Apple Inc. | Force sensing switch |
US9995641B2 (en) * | 2013-10-30 | 2018-06-12 | Honeywell International Inc. | Force sensor with gap-controlled over-force protection |
US9354640B2 (en) * | 2013-11-11 | 2016-05-31 | Fresenius Medical Care Holdings, Inc. | Smart actuator for valve |
US9874945B2 (en) | 2014-02-13 | 2018-01-23 | Microsoft Technology Licensing, Llc | Low-profile pointing stick |
US10528155B2 (en) | 2014-02-13 | 2020-01-07 | Microsoft Technology Licensing, Llc | Low-profile pointing stick |
US10627918B2 (en) | 2014-02-13 | 2020-04-21 | Microsoft Technology Licensing, Llc | Low-profile pointing stick |
US9835515B2 (en) | 2014-10-10 | 2017-12-05 | Stmicroeletronics S.R.L. | Pressure sensor with testing device and related methods |
KR20160126212A (ko) * | 2015-04-23 | 2016-11-02 | 삼성전기주식회사 | 압력 센서 패키지 |
CN109069840B (zh) | 2016-02-04 | 2022-03-15 | 心脏起搏器股份公司 | 具有用于无引线心脏装置的力传感器的递送*** |
US10113927B2 (en) * | 2016-02-24 | 2018-10-30 | Honeywell International Inc. | Flip chip pressure sensor assembly |
GB2552025B (en) | 2016-07-08 | 2020-08-12 | Sovex Ltd | Boom conveyor |
US10190925B2 (en) | 2016-07-18 | 2019-01-29 | Honeywell International Inc. | Low cost overmolded leadframe force sensor with multiple mounting positions |
US10571348B2 (en) * | 2016-08-30 | 2020-02-25 | Honeywell International Inc. | Overforce control through sense die design |
US20180180494A1 (en) | 2016-12-22 | 2018-06-28 | Honeywell International Inc. | High Sensitivity Silicon Piezoresistor Force Sensor |
US10001418B1 (en) * | 2017-02-13 | 2018-06-19 | Honeywell International Inc. | Micrometer mechanical force interface |
US10444090B2 (en) * | 2017-05-15 | 2019-10-15 | Honeywell International Inc. | System and method for securing sense die in force sensor |
US10330540B2 (en) | 2017-08-22 | 2019-06-25 | Honeywell International Inc. | Force sensor |
US11352528B1 (en) * | 2019-03-12 | 2022-06-07 | Seagate Technology Llc | Adhesive compositions that contain adhesive polymer and carbon nanotubes, and related products and methods |
WO2020190311A1 (en) * | 2019-03-20 | 2020-09-24 | Massachusetts Institute Of Technology | Sensing system |
WO2023177900A2 (en) * | 2022-03-17 | 2023-09-21 | Sensata Technologies, Inc. | Brake pedal with force sensor and membranes |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4155325A (en) * | 1978-01-13 | 1979-05-22 | Kuei Chin Yu | Low tire pressure warning indicator |
DE2916326A1 (de) * | 1978-04-24 | 1979-10-31 | Asahi Enterprise Kk | Druckmessvorrichtung |
US4510814A (en) | 1982-04-01 | 1985-04-16 | Deere & Company | Snap-in force sensor with bellows |
US4645965A (en) * | 1984-10-26 | 1987-02-24 | Texas Instruments Incorporated | Cylinder pressure transmitter for an internal combustion engine |
US4934860A (en) | 1988-07-13 | 1990-06-19 | Honeywell Inc. | Pivotal shaft frictionless support arrangement |
US5231386A (en) * | 1990-07-24 | 1993-07-27 | Home Row, Inc. | Keyswitch-integrated pointing assembly |
US5223776A (en) | 1990-12-31 | 1993-06-29 | Honeywell Inc. | Six-degree virtual pivot controller |
US5184107A (en) | 1991-01-28 | 1993-02-02 | Honeywell, Inc. | Piezoresistive pressure transducer with a conductive elastomeric seal |
US5303593A (en) | 1991-06-07 | 1994-04-19 | Maclean-Fogg Company | Strain gauge distribution for resistive strain gauge pressure sensor |
US5187985A (en) | 1991-09-19 | 1993-02-23 | Honeywell Inc. | Amplified pressure transducer |
US6343991B1 (en) * | 1997-10-01 | 2002-02-05 | Brad A. Armstrong | Game control with analog pressure sensor |
US5999084A (en) * | 1998-06-29 | 1999-12-07 | Armstrong; Brad A. | Variable-conductance sensor |
US5661245A (en) | 1995-07-14 | 1997-08-26 | Sensym, Incorporated | Force sensor assembly with integrated rigid, movable interface for transferring force to a responsive medium |
EP0800070B1 (en) | 1996-04-04 | 2001-08-22 | Ssi Technologies, Inc. | Pressure sensor package and method of making the same |
US5744726A (en) | 1997-02-25 | 1998-04-28 | Honeywell Inc. | Pressure sensor with reduced dead space achieved through an insert member with a surface groove |
US5760313A (en) | 1997-03-05 | 1998-06-02 | Honeywell Inc. | Force sensor with multiple piece actuation system |
JP3475426B2 (ja) | 1997-03-24 | 2003-12-08 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US6311561B1 (en) | 1997-12-22 | 2001-11-06 | Rosemount Aerospace Inc. | Media compatible pressure sensor |
US6351996B1 (en) | 1998-11-12 | 2002-03-05 | Maxim Integrated Products, Inc. | Hermetic packaging for semiconductor pressure sensors |
US6255728B1 (en) | 1999-01-15 | 2001-07-03 | Maxim Integrated Products, Inc. | Rigid encapsulation package for semiconductor devices |
AU7840500A (en) | 1999-09-30 | 2001-04-30 | Uab Research Foundation | Implantable mechanical force sensor |
US6874377B2 (en) | 1999-11-10 | 2005-04-05 | Honeywell International Inc. | Sensor package for flush mounting of a sensor |
US6481286B1 (en) | 2000-08-30 | 2002-11-19 | The Charles Stark Draper Laboratory, Inc. | Reentrant microwave resonant cavity accelerometer |
US6601455B2 (en) | 2001-03-22 | 2003-08-05 | Kulite Semiconductor Products, Inc. | Force transducer with environmental protection |
WO2002103369A1 (en) | 2001-06-18 | 2002-12-27 | Honeywell International Inc. | Small size, high capacitance readout silicon based mems accelerometer |
KR100418700B1 (ko) * | 2001-07-23 | 2004-02-11 | 이형일 | 유한요소해에 기초한 물성평가 구형 압입시험기 |
JP3479064B1 (ja) | 2002-04-12 | 2003-12-15 | 北陸電気工業株式会社 | 半導体力センサ |
US6907789B2 (en) | 2002-05-06 | 2005-06-21 | Honeywell International Inc. | Sensor package |
US6736015B1 (en) | 2002-11-04 | 2004-05-18 | The United States Of America As Represented By The Secretary Of The Air Force | Robust, wireless microelectro mechanical system (MEMS) shear force sensor |
DE10324139B4 (de) | 2003-05-26 | 2005-07-21 | Infineon Technologies Ag | Mikroelektromechanisches Bauteil und Verfahren zu seiner Herstellung |
EP1721173B1 (en) | 2004-03-02 | 2008-05-07 | ETH Zürich | Force sensor |
US7287432B2 (en) | 2005-11-17 | 2007-10-30 | Rosemount Inc. | Process transmitter with overpressure vent |
US7360438B2 (en) | 2006-02-08 | 2008-04-22 | Honeywell International Inc. | Advanced thick film load cell |
US7726197B2 (en) | 2006-04-26 | 2010-06-01 | Honeywell International Inc. | Force sensor package and method of forming same |
US8469597B2 (en) | 2008-04-16 | 2013-06-25 | Honeywell International Inc. | Active preload control for rolling element bearings |
US7775126B2 (en) | 2008-10-22 | 2010-08-17 | Honeywell International Inc. | Fluid flow monitor |
US7775127B2 (en) | 2008-12-23 | 2010-08-17 | Honeywell International Inc. | Method and system for measuring flow at patient utilizing differential force sensor |
US8327715B2 (en) * | 2009-07-02 | 2012-12-11 | Honeywell International Inc. | Force sensor apparatus |
-
2010
- 2010-12-15 US US12/969,426 patent/US8316725B2/en not_active Expired - Fee Related
-
2011
- 2011-12-13 EP EP11193330A patent/EP2466284A1/en not_active Withdrawn
- 2011-12-14 AU AU2011254029A patent/AU2011254029A1/en not_active Abandoned
- 2011-12-15 CN CN201110462518.3A patent/CN102589761A/zh active Pending
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Publication number | Priority date | Publication date | Assignee | Title |
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US11248972B2 (en) | 2017-10-24 | 2022-02-15 | Continental Automotive France | Torque sensor for a rotating element using a mechanical friction coupling |
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US20120152037A1 (en) | 2012-06-21 |
US8316725B2 (en) | 2012-11-27 |
AU2011254029A1 (en) | 2012-07-05 |
EP2466284A1 (en) | 2012-06-20 |
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