CN102569586A - Integral-face press-fit type inverted LED (Light Emitting Diode) and manufacturing method thereof - Google Patents
Integral-face press-fit type inverted LED (Light Emitting Diode) and manufacturing method thereof Download PDFInfo
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- CN102569586A CN102569586A CN2012100694206A CN201210069420A CN102569586A CN 102569586 A CN102569586 A CN 102569586A CN 2012100694206 A CN2012100694206 A CN 2012100694206A CN 201210069420 A CN201210069420 A CN 201210069420A CN 102569586 A CN102569586 A CN 102569586A
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Abstract
The invention provides an integral-face press-fit type inverted LED (Light Emitting Diode) and a manufacturing method thereof. The integral-face press-fit type inverted LED structurally comprises an LED chip n-type layer, an LED chip multi-quantum-well light-emitting layer and an LED chip p-type layer from bottom to top in sequence, wherein a positive electrode is arranged above the LED chip p-type layer, a negative electrode is prepared at one side of the LED chip multi-quantum-well light-emitting layer, an insulation layer covers on the entire structure except for a small part of the negative electrode and the positive electrode, a positive electrode through hole and a negative electrode through hole are reserved, or part of the positive and negative electrodes is exposed; and a metal layer is arranged on the insulation layer, an insulation channel is formed in the middle of the metal layer so that the whole metal layer is divided into two regions, one region is connected with the negative electrode, and the other region is connected with the positive electrode, that is to say, the negative electrode and the positive electrode of the Led are connected onto a same metal layer plane. According to the invention, the area of the negative electrode can be reduced, the light emergent efficiency can be increased, a technological process is simplified greatly, and the cost is reduced.
Description
Technical field
The invention belongs to photoelectron technology, be specially LED and make and encapsulation field.
Background technology
Current flip LED manufacturing process is: 1, produce the LED step; 2, make electrode; 3, on substrate, make the metal electrode figure corresponding with chip power utmost point figure; 4, on substrate, make metal ball; 5, through covering brilliant machine that chip is corresponding with fundamental figure, pressing then.It is to connect through several gold goals that its chip is connected with substrate, and heat-conducting area is little.Because negative electrode is etched directly into n type district, the n electrode zone is non-luminous, and this kind Flip Chip is owing to need gold goal to carry out the connection of negative electrode, and gold goal will occupy the position of a large amount of negative electrodes, reduce light-emitting area, reduce light extraction efficiency.The upside-down mounting device therefor costs an arm and a leg, and the upside-down mounting cost is high.Need to make transparency conducting layer in the upside-down mounting process, make the technology of a series of complicacies such as gold goal, and if want the light effect that goes out that reaches higher, also need make speculum.Reverse installation process is complicated, and cost is high, and the connected mode of gold goal limited its heat-sinking capability, has reduced the light-emitting area of chip.
The problem of institute of the present invention desire solution is that the technology of previous flip LED connects chip and substrate by several gold goals, and there have metal ball to connect heat-sinking capability limited problem and negative electrode area to be excessive, reduced shortcomings such as a lot of efficient lighting areas.
Summary of the invention
The present invention's purpose system is in order to develop a kind of novel process technique; Be different from product in the market; Because product multidigit gold goal formula is on the market covered crystalline substance; Led chip and substrate contacts area are very little, can contact with substrate and the present invention's purpose can reach whole of led chip, increase the area of heat radiation.In addition the present invention also hopes to reduce the negative electrode area, improves luminous efficiency.
Whole laminated type flip LED; It is characterized in that: comprise successively from bottom to up: led chip n type layer 106, led chip multiple quantum well luminescent layer 105, led chip p type layer 104; The top of led chip p type layer 104 is a positive electrode; And the side preparation at led chip multiple quantum well luminescent layer 105 has negative electrode, is coated with insulating barrier on the positive electrode, and this insulating barrier covers the sub-fraction total except negative electrode 123 and positive electrode 113; Reserve the positive electrode through hole, negative electrode through hole or positive and negative electrode expose out a part; The layer of metal layer is arranged on insulating barrier; And reserve a bar insulation passage in the middle of the metal level, make whole metal level be divided into two zones, a zone connects negative electrode; A zone connects positive electrode, and promptly the negative electrode of LED and positive electrode are connected on the same metal layer plane.
The preparation method of brilliant LED is covered in described whole laminated type upside-down mounting, it is characterized in that:
(A) be made into and have only led chip n type layer 106, led chip multiple quantum well luminescent layer 105, the structure of led chip p type layer 104;
(B) on (A) structure, make positive and negative electrode;
(C) on (B) structure, prepare insulating barrier, erode away the positive electrode through hole at positive and negative electrode respectively, the negative electrode through hole perhaps makes positive and negative electrode expose out a part;
(D) on (C) structure, make the layer of metal layer, making becomes two parts mutual insulating, and two parts link with positive and negative electrode respectively, and metal level will not be connected to same plane at conplane positive and negative electrode originally in same plane.
(E) make with (D) structure in the corresponding substrate metal figure of pressing metal layer pattern; Aim at the pressing action then with substrate; Make pressing layer metal corresponding each other, perhaps the corresponding mode of placing with eutectic with the substrate metal figure of led chip is realized being connected of led chip and substrate with the substrate metal figure.
This case is a light-emitting diode that is directed against the connected mode of flip LED chips and substrate by face-face bonding type flip LED structure.It is characterized in that being that general connected mode is to connect substrate and led chip with gold goal, general flip LED chips need be made ITO layer and metal ball and metallic reflector.And the flip LED that this case disclosed; It is as long as characteristics are in the mode of utilizing metal to link and connect; Be connected same plane to original not negative electrode and positive electrode on a plane; Thereby accomplish the action do not need gold goal to connect and to carry out pressing, realizes almost whole the contacting of chip and substrate, so be different from general flip LED.
Because of the structure of the flip LED of this case must can be connected on the same plane negative electrode of horizontal LED and positive electrode via special design.If use traditional flip LED, if do not use the direct pressing of gold goal, negative electrode can't link to each other with electrode of substrate.The flip LED of this case must have a layer insulating; Insulating barrier covers the most zone of chip, does not only cover in a minimum zone of positive electrode and negative electrode, on insulating barrier, makes the layer of metal layer again; And a bar insulation passage is reserved in the centre; Make whole metal level be divided into two zones, a zone connects negative electrode, and a zone connects positive electrode.The substrate metal layer is made corresponding with it zone simultaneously.More than explanation be easy to more understand for the design of this case.
The flip LED structure that this case disclosed can be carried out whole connection, and chip occupies more than 90% of chip area with being connected area basically, can reach better heat radiating effect.The present invention does not connect through metal ball, and electrode pattern can design arbitrarily, thereby improves electric current uniformity through improving electrode pattern; And owing to do not need the position of negative electrode gold goal; Can reduce the area of negative electrode, increase lighting area, improve light extraction efficiency.The LED of this case makes the metallic reflection electrode, and electrode covers whole step, need not make transparency conducting layer, does not need extra making speculum.As commercial production, electrode gold layer thickness can reduce greatly, reduces production costs greatly.Traditional relatively flip LED has been simplified technical process greatly, reduces cost.And encapsulation process can realize through eutectic, replaces the pressing process.(compare with traditional flip LED, the negative electrode area can reduce more than 30%, and heat dispersion can improve more than 20% (can make original 12 gold goal flip LED junction temperatures drop to 60 degree from average 78 degree).Light extraction efficiency can improve more than 30%.
This case is one and covers the light-emitting diode of brilliant LED structure to flip LED chips and basic connected mode by face-face bonding type.It is characterized in that being that general connected mode is to connect substrate and led chip with gold goal, general flip LED chips need be made ITO layer and metal ball and metallic reflector.And the flip LED that this case disclosed; Its main feature is to utilize metal; Like 111 and 113,121 modes that link to each other with 123 among Fig. 1, be connected same plane to original not negative electrode and positive electrode, thereby accomplished the action that does not need the metal ball connection and carry out pressing on a plane; Realize contacting between almost whole chip and the substrate, therefore be different from general flip LED.
Because of the structure of the flip LED of this case must be via special design; Negative electrode and the positive electrode of horizontal LED can be connected on the same plane; Be connected to metal 111 like positive electrode 113 among the figure, negative electrode 123 is connected to metal 121,121 and 111 at grade.If use traditional flip LED, if do not use the direct pressing of gold goal, negative electrode can't link to each other with electrode of substrate.The flip LED of this case must have a layer insulating, for example silicon dioxide, aluminium oxide, aluminium nitride, zinc oxide etc., and insulating barrier covers the most zone of chip; Only do not cover, reserve the through hole that links, on insulating barrier, make the layer of metal layer again in a minimum zone of positive electrode and negative electrode; Be the pressing metal level, and the centre reserves a bar insulation passage, make whole metal level be divided into two zones; A zone connects negative electrode, and a zone connects positive electrode.The substrate metal layer is made corresponding with it zone simultaneously.Patent is as in 095139473 case before, and the positive and negative electrode metal is not deposited on the plane, pass through complicated PROCESS FOR TREATMENT and just can make positive and negative electrode well pressing simultaneously.In this case because positive and negative electrode be connected to two separate and be deposited on conplane metal pressing layer.And the LED of this case can carry out the action of eutectic encapsulation, to replace the action of pressing.Further reduce the cost in the whole LED manufacture process.More than explanation be easy to more understand for the design of this case.
Description of drawings
Fig. 1 is whole laminated type flip LED of a present invention sketch map.
Bonding metal figure on Fig. 2 substrate and the substrate.
The corresponding metal pattern is done the eutectic bonding on whole laminated type flip LED of Fig. 3 the present invention and the substrate
Among the figure
111... malleation metal layer or eutectic metal level
121... negative pressure metal layer or eutectic metal level
102... silicon dioxide insulating layer
113... positive electrode
123... negative electrode
104...LED chip p type layer
105...LED chip multiple quantum well luminescent layer
106...LED chip n type layer
The through hole 117... positive electrode links to each other with malleation metal layer
The through hole 127... negative electrode links to each other with negative pressure metal layer
211... the positive bonding metal layer of substrate
221... substrate is born the bonding metal layer
202... substrate
Embodiment
Cover the structure that brilliant LED separates positive and negative electrode and pressing layer through insulating barrier, as shown in Figure 1.
Fig. 1 only is a sketch map, and protection range is included in the structure that improves on this structure not only in this kind structure.
2. the material of 113 reflection electrode layers in the structure 1 comprises Mo/Ag/Au, Ti/Al/Ti/Au, Pt/Ag/Au etc.
3. the material of 102 insulating barriers in the structure 1 comprises silicon dioxide, silicon-nitrogen compound, aluminium nitride, zinc oxide etc.
4. the material of 111,121 pressing metal levels in the structure 1 comprises and is not limited only to Ti/Au, Sn/Au, Cu etc.
5. 113,123 reflecting electrode layer patterns in the structure 1 comprise comb finger electrode figure, forked etc.
6. 102 insulating barrier figures in the structure 1 comprise rectangle, trapezoidal etc.
7. the figure of 102 pressing metal levels in the structure 1 comprises two independently rectangles, trapezoidal etc.
Specific embodiment 1:
For instance, positive and negative electrode is linked on the layer of silicon dioxide mutually, not only saves the processing procedure of making metal ball, and can increase that to cover crystal face long-pending, make and cover that crystal face is long-pending can to reach whole more than 80% of chips easily.Temperature is very big for the LED influence, not only can influence the luminous efficiency of LED, and the life-span that can reduce LED, and the LED of use fluorescent material also can influence the quality of fluorescent material.Heat radiation is extremely important to LED.The structure that this case is showed has extraordinary lifting effect for heat radiation, and simplifies making step.
The LED structure of this case, the process technique through just can realize, for instance, and like Fig. 1 institute not:
(A) adopt general process technique, chip unit in the epi-wafer is made into has only 104,105,106 structure.
(B) on (A) structure, make positive and negative electrode, for example 113,123, the zone except that negative electrode all can cover positive electrode.As: Mo/Ag/Au (15nm/15nm/200nm)
(C) PECVD deposition layer of silicon dioxide or deposited by electron beam evaporation, sputter on (B) structure erode away positive electrode through hole 117 at positive and negative electrode respectively, and negative electrode through hole 127 perhaps makes positive and negative electrode expose out a part.(1nm＜thickness, hole size can design according to die size, and lead to the hole site also can be decided according to the concrete design of chip electrode figure.)
(D) on (C) structure, make one deck pressing metal level or eutectic metal level (like signal bronze or Ni/Ag); Making becomes two parts mutual insulating; Two parts link with positive and negative electrode respectively; Pressing layer metal will not be connected to same plane at conplane positive and negative electrode originally in same plane.
(E) make with (D) structure in the corresponding substrate metal figure of pressing metal layer pattern, bonding metal is as shown in Figure 2 on substrate and the substrate, the situation after the pressing is as shown in Figure 3.Or with substrate on the corresponding metal pattern to do the action of eutectic bonding as shown in Figure 3.Perhaps with the corresponding placement of led chip,, realize being connected of led chip and substrate with the mode of eutectic like 3 figure with the substrate metal figure.
Specific embodiment 2:
(A) (B) with embodiment 1 in identical, (C) in insulating layer material sputter one deck zinc-oxide film, sputter temperature is controlled at below 400 degrees centigrade.Zinc oxide is met high pressure and is become conductor, both positive and negative polarity is linked to each other, thereby realize anlistatig effect.And zinc oxide and metal adhesion property are good, and be perishable, and cost is low.
Identical in remaining step and the specific embodiment 1.
Compare with traditional flip LED, the negative electrode area can reduce 30%-50%, and heat dispersion can improve more than 20% (can make original 12 gold goal flip LED junction temperatures drop to 60 degree from average 78 degree).Light extraction efficiency can improve more than 30%.
Claims (3)
1. whole laminated type flip LED is characterized in that: comprise successively from bottom to up: led chip n type layer, led chip multiple quantum well luminescent layer; Led chip p type layer, the top of led chip p type layer is a positive electrode, and in the side preparation of led chip multiple quantum well luminescent layer negative electrode is arranged; Be coated with insulating barrier on the positive electrode; This insulating barrier covers the sub-fraction total except negative electrode and positive electrode, reserves the positive electrode through hole, and negative electrode through hole or positive and negative electrode expose out a part; The layer of metal layer is arranged on insulating barrier; And reserve a bar insulation passage in the middle of the metal level, make whole metal level be divided into two zones, a zone connects negative electrode; A zone connects positive electrode, and promptly the negative electrode of LED and positive electrode are connected on the same metal layer plane.
2. the preparation method of whole laminated type flip LED according to claim 1 is characterized in that:
(A) be made into and have only led chip n type layer, led chip multiple quantum well luminescent layer, the structure of led chip p type layer;
(B) on (A) structure, make positive and negative electrode;
(C) on (B) structure, prepare insulating barrier, erode away the positive electrode through hole at positive and negative electrode respectively, the negative electrode through hole perhaps makes positive and negative electrode expose out a part;
(D) on (C) structure, make the layer of metal layer, making becomes two parts mutual insulating, and two parts link with positive and negative electrode respectively, and metal level will not be connected to same plane at conplane positive and negative electrode originally in same plane.
3. method according to claim 2 is characterized in that, and is further comprising the steps of:
(E) make with (D) structure in the corresponding substrate metal figure of pressing metal layer pattern; Do with substrate then and aim at the pressing action; Make on the chip pressing layer metal corresponding each other, perhaps the corresponding mode of placing with eutectic with the substrate metal figure of led chip is realized being connected of led chip and substrate with the substrate metal figure.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103855149A (en) * | 2014-02-20 | 2014-06-11 | 中国科学院半导体研究所 | Inverted high-voltage light-emitting diode and manufacturing method thereof |
| WO2014101280A1 (en) * | 2012-12-26 | 2014-07-03 | 东莞市正光光电科技有限公司 | Flip-chip led chip |
| CN104576886A (en) * | 2015-01-07 | 2015-04-29 | 沈光地 | High-quality light-emitting device of lossless coplane electrode, preparing method thereof and alternating-current type vertical light-emitting device |
| WO2016115877A1 (en) * | 2015-01-20 | 2016-07-28 | 湘能华磊光电股份有限公司 | Group iii semiconductor luminescent device |
| CN110943147A (en) * | 2018-09-25 | 2020-03-31 | 山东浪潮华光光电子股份有限公司 | Tube core manufacturing method for improving welding line performance of reversed-polarity GaAs-based AlGaInP red LED chip |
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| CN102299243A (en) * | 2011-09-14 | 2011-12-28 | 青岛理工大学 | Thin film flip chip photonic crystal light-emitting diode (LED) chip and manufacturing method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2014101280A1 (en) * | 2012-12-26 | 2014-07-03 | 东莞市正光光电科技有限公司 | Flip-chip led chip |
| CN103855149A (en) * | 2014-02-20 | 2014-06-11 | 中国科学院半导体研究所 | Inverted high-voltage light-emitting diode and manufacturing method thereof |
| CN104576886A (en) * | 2015-01-07 | 2015-04-29 | 沈光地 | High-quality light-emitting device of lossless coplane electrode, preparing method thereof and alternating-current type vertical light-emitting device |
| WO2016115877A1 (en) * | 2015-01-20 | 2016-07-28 | 湘能华磊光电股份有限公司 | Group iii semiconductor luminescent device |
| CN110943147A (en) * | 2018-09-25 | 2020-03-31 | 山东浪潮华光光电子股份有限公司 | Tube core manufacturing method for improving welding line performance of reversed-polarity GaAs-based AlGaInP red LED chip |
| CN110943147B (en) * | 2018-09-25 | 2020-09-08 | 山东浪潮华光光电子股份有限公司 | Tube core manufacturing method for improving welding line performance of reversed-polarity GaAs-based AlGaInP red LED chip |
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Application publication date: 20120711 |