CN110943147A - Tube core manufacturing method for improving welding line performance of reversed-polarity GaAs-based AlGaInP red LED chip - Google Patents
Tube core manufacturing method for improving welding line performance of reversed-polarity GaAs-based AlGaInP red LED chip Download PDFInfo
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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Abstract
A method for manufacturing a tube core for improving welding line performance of a GaAs-based AlGaInP red LED chip with reversed polarity includes enabling a main electrode bottom layer and an N-type AlGaInP layer to be well adhered due to a metal Ni layer and a metal Au layer in a main electrode, enabling the main electrode bottom layer and the N-type AlGaInP layer to form a hole pattern by arranging a plurality of through holes in a blocking layer, effectively blocking excessive diffusion of the metal Ni layer, enabling the main electrode bottom layer and the N-type AlGaInP layer to be in good contact, and completely solving the problem that a welding pad is easy to fall off during welding. The process method is simple and easy to operate, does not need to introduce special equipment, solves the problem of difficult wire bonding by using lower cost, and is suitable for the manufacturing process of all GaAs-based red light LED chips.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a method for manufacturing a tube core for improving the welding line performance of a GaAs-based AlGaInP red LED chip with reversed polarity.
Background
A light Emitting diode (led) is a solid-state Electroluminescent (EL) semiconductor device that converts electrical energy into optical energy. The substantial core structure of the LED is a P-N section composed of III-IV group or III-V group compound materials in an element spectrum. The LED light radiation spectrum is distributed on one unique side. It is not monochromatic light (such as laser) nor broad-spectrum radiation (such as incandescent lamp), but is in between, with a bandwidth of tens of nanometers, with peak wavelengths in the visible or near infrared region. Compared with a common light source, the LED has the following advantages: 1. high efficiency: the LED lamp and the incandescent lamp with the same power have high luminous efficiency, and the LED lamp and the incandescent lamp have good lighting effects; 2. the service life is long: the longest service life of the LED lamp can reach 10 ten thousand hours, and the half-life cycle of the LED lamp can reach more than 5 ten thousand hours; 3. low power consumption: the electric quantity can be saved by more than 70% compared with an incandescent lamp with the same light effect; 4. low failure: the LED is used as a semiconductor element, sensitive parts such as a vacuum device, a high-voltage trigger circuit and the like are not arranged, and the failure rate is extremely low; 5. green and environment-friendly: the monochromaticity is good, the LED spectrum is concentrated, the spectrum is not more than that of an infrared lamp and an ultraviolet lamp, the heat and radiation are little, the influence on the irradiated object is little, harmful substances such as mercury and the like are not contained, the waste can be recycled, and the pollution is avoided; 6. the directivity is strong: plane light emitting, strong directivity; 7. quick response: the response time is short, only tens of nanoseconds, and the starting is very quick; 8. multi-color: the LED color, different semiconductor materials, different colors of light and color saturation can reach 130% of full color and different light colors, and a time sequence control circuit is utilized to achieve a colorful dynamic change effect. The LED can be divided into small power (< 0.06W), medium power (less than 1W) and large power (> 1W) according to the working power division, and the GaAs-based reversed polarity AlGaInP red LED chip used by the LED is the large-power semiconductor device.
The high-brightness high-power AlGaInP red LED is a common visible light LED which is widely developed in recent years, and the AlGaInP quaternary red LED has the advantages of strong current bearing capacity, high luminous efficiency, high temperature resistance and the like, has an irreplaceable position in illumination, display and indicator lamps, and is widely applied to various illumination fields. The AlGaInP quaternary red light LED traditional process comprises an epitaxial structure, wherein the epitaxial structure comprises a temporary substrate layer, a buffer layer, a barrier layer, an N-type gallium arsenide ohmic contact layer, a quantum well layer, a P-type AlGaInP limiting layer and a P-type GaAs layer, a Si sheet is used as a replacing and fixing substrate, a P-type electrode grows on a naked AlGaInP layer, the P-type electrode is made of Cr, Ni and Ge serving as contact layers, Ti and Pt serving as transition layers, and Al and Au serving as main electrode layers are used for manufacturing the electrode structure. In order to enhance the adhesion of the metal and the AlGaInP interface (electrode solderability), a new interface, a metal alloy and the like are etched by acid pickling the AlGaInP, but a certain bonding wire defect rate still exists.
Chinese patent document CN 104518056A (201410845314.1) proposes a method for preparing a reversed-polarity AlGaInP red LED chip, comprising the following steps: (1) bonding a wafer of the GaAs substrate light-emitting diode and a silicon wafer together; (2) etching the GaAs substrate; (3) scraping the residual metal film layer on the edge of the wafer; (4) etching the barrier layer; (5) and (5) manufacturing an electrode. In the invention, the residual metal film layer is scraped by one step, so that the particle pollution on the surface of the wafer is reduced, the yield of the electrode welding wire can be increased to a certain degree, but the essential problem of the electrode is not improved. Chinese patent document CN 104167477A (201410355102.5) proposes a reversed polarity AlGaInP-based light emitting diode and its manufacturing method, which includes the following steps: manufacturing a total reflection mirror structure layer on the epitaxial wafer; bonding the epitaxial wafer and a permanent substrate together; removing the temporary substrate, the buffer layer, the barrier layer and the N-type gallium arsenide layer, and coarsening the first coarsening layer; manufacturing a patterned extension electrode on the first coarsening layer and the N-type gallium arsenide ohmic contact layer; protecting the existing patterned extension electrode by using a mask, removing the first coarsening layer and the N-type gallium arsenide ohmic contact layer in the region outside the mask protection layer, and coarsening the second coarsening layer; the main electrode is formed on the second roughened layer. The coarsening epitaxial layer structure and the mask protection are mainly utilized, the adhesiveness and the integrity of the electrode and the epitaxial layer are improved, the working voltage stability of the light-emitting device is ensured, and the quality and the yield of products are greatly improved. Coarsening treatment is carried out below the N expansion electrode and the main electrode, the N expansion electrode is well protected, the contact between the main electrode and the expansion electrode and AlGaInP is enhanced, but the coarsened AlGaInP has the phenomenon of loose interface, has particles with different degrees and still has the phenomenon of poor welding wire.
In view of the above, it is necessary to develop a process for forming a complete bonding wire with good adhesion and complete contact with the AlGaInP interface.
Disclosure of Invention
In order to overcome the defects of the technology, the invention provides a method for manufacturing a tube core for improving the welding line performance of a GaAs-based AlGaInP red LED chip with reversed polarity.
The technical scheme adopted by the invention for overcoming the technical problems is as follows:
a tube core manufacturing method for improving welding performance of a reversed-polarity GaAs-based AlGaInP red light LED chip comprises a GaAs-based epitaxial wafer and a silicon wafer, wherein the GaAs-based epitaxial wafer is respectively a GaAs temporary substrate, a buffer layer, an N-type GaAs layer, an N-type AlGaInP layer, a quantum well layer, a P-type AlGaInP layer and a P-type GaAs layer from bottom to top, the silicon wafer is respectively a silicon substrate and a reflector layer I from bottom to top, and the method comprises the following steps:
a) sequentially growing an ohmic contact and current blocking layer and a reflector layer II on the P-type AlGaInP and P-type GaAs layer by using the GaAs-based epitaxial wafer;
b) after the GaAs-based epitaxial wafer is turned over by 180 degrees, the GaAs-based epitaxial wafer is used as a temporary substrate to be placed in an oven for high-temperature bonding with the silicon wafer, and a reflector layer II at the lower end of the GaAs-based epitaxial wafer is fixedly connected with a reflector layer I at the upper end of the silicon wafer through a metal bonding layer;
c) sequentially removing the GaAs temporary substrate and the buffer layer above the GaAs-based epitaxial wafer by using an etching solution;
d) metal Cr is evaporated above the N-type GaAs layer, metal Au is evaporated above the metal Cr, the metal Cr layer and the metal Au layer form an electrode layer, a mask pattern is manufactured on the electrode layer by using photoresist, a pattern required by an extension electrode is manufactured, and the electrode layer except the pattern required by the extension electrode is etched by using corrosive liquid to form the extension electrode;
e) manufacturing a mask pattern above the N-type AlGaInP layer by using photoresist, protecting the extension electrode by using the mask pattern, corroding the N-type GaAs layer in the region outside the extension electrode, roughening the upper surface of the N-type AlGaInP layer by using roughening liquid, and removing the photoresist after roughening;
f) growing a metal Ni layer on the coarsened N-type AlGaInP layer, growing a metal Au layer I on the metal Ni layer, and growing a metal Au layer I on the metal Au layer by utilizing PECVD equipment
A barrier layer formed by wet etching using photoresist as a mask pattern
A plurality of through holes arranged along the horizontal direction are formed in the barrier layer;
g) in that
Growing a metal Ge layer on the barrier layer, growing a metal Au layer II on the metal Ge layer, making a mask pattern on the metal Au layer II to make a pattern required by the main electrode, and etching the metal Au layer II, the metal Ge layer and the metal Au layer except the pattern required by the main electrode with an etchant,
Corroding the barrier layer, the metal Au layer I and the metal Ni layer, and performing high-temperature alloying to form a main electrode;
h) thinning the bottom surface of the silicon substrate, and manufacturing an N electrode below the thinned silicon substrate;
i) and splitting the prepared wafer to form a plurality of tube cores.
Further, the temperature in the oven in the step b) is 260 ℃, and the baking time is 1 hour.
Furthermore, the metal material of the reflecting mirror layer I and the reflecting mirror layer II is Ti and/or Pt and/or Au and/or AuBe, and the metal material of the metal bonding layer In the step b) is Sn and/or In and/or Au and/or Ag.
Further, the etching solution for etching the temporary substrate in the step c) is a solution prepared by mixing ammonia water, hydrogen peroxide and water according to a solution volume ratio of 1:1:1, the etching time is 60min, the etching solution for etching the buffer layer is a solution prepared by mixing sulfuric acid and hydrogen peroxide according to a solution volume ratio of 1:1, and the etching time is 5 min.
Further, in the step d), the thickness of the metal Cr is 50-200 angstroms, the thickness of the metal Au is 1000-10000 angstroms, the corrosive liquid is a solution prepared by mixing iodine, potassium iodide and water according to the volume ratio of the solution of 1:1:1, and the corrosion time is 30 seconds.
Further, the area of the mask pattern in the step e) is larger than that of the extension electrode.
Further, in the step f), the thickness of the metal Ni layer is larger than that of the metal Au layer I, the thickness of the metal Ni layer is 1000-3000 angstroms, the thickness of the metal Au layer I is 50-200 angstroms,
the thickness of the barrier layer is 3000-10000 angstrom.
Further, the thickness of the metal Ge layer (16) in the step g) is 50-300 angstroms, and the thickness of the metal Au layer II is 10000-30000 angstroms.
Further, the temperature of the high-temperature alloy in the step g) is 350-450 ℃, and the time is 2-10 min.
Further, the metal Ni layer and the metal Au layer I in the step f) are prepared by an evaporation or sputtering method, and the metal Ge layer and the metal Au layer II in the step g) are prepared by an evaporation or sputtering method.
The invention has the beneficial effects that: the metal Ni layer and the metal Au layer in the main electrode enable the bottom layer of the main electrode to have better adhesion with the N-type AlGaInP layer
The blocking layer is provided with a plurality of through holes to form a hole pattern, so that excessive diffusion of the metal Ni layer can be effectively blocked, the main electrode bottom layer can be in good contact with the N-type AlGaInP layer, and the problem that a bonding pad is easy to fall off during bonding can be completely solved. The process method is simple and easy to operate, does not need to introduce special equipment, solves the problem of difficult wire bonding by using lower cost, and is suitable for the manufacturing process of all GaAs-based red light LED chips.
Drawings
FIG. 1 is a schematic view of a GaAs-based epitaxial wafer according to the present invention;
FIG. 2 is a schematic diagram of the structure of a die of the present invention;
FIG. 3 is a schematic structural diagram of a main electrode according to the present invention;
in the figure, 1, an N electrode 2, a silicon substrate 3, a reflector layer I4, a metal bonding layer 5, a reflector layer II 6, an ohmic contact and current blocking layer 7, a P type AlGaInP and P type GaAs layer 8, a quantum well layer 9, an N type AlGaInP layer 10, an N type GaAs layer 11, an extension electrode 12, a main electrode 13, a metal Ni layer 14 and a metal Au layer I15 are arranged.
Barrier layer 16, metal Ge layer 17, metal Au layer II 18, GaAs temporary substrate 19, buffer layer.
Detailed Description
The invention will be further explained with reference to fig. 1, fig. 2 and fig. 3.
A tube core manufacturing method for improving welding performance of a reversed-polarity GaAs-based AlGaInP red light LED chip comprises a GaAs-based epitaxial wafer and a silicon wafer, wherein the GaAs-based epitaxial wafer is respectively a GaAs temporary substrate 18, a buffer layer 19, an N-type GaAs layer 10, an N-type AlGaInP layer 9, a quantum well layer 8, a P-type AlGaInP layer 7 and a P-type GaAs layer 7 from bottom to top, the silicon wafer is respectively a silicon substrate 2 and a reflector layer I3 from bottom to top, and the method comprises the following steps:
a) sequentially growing an ohmic contact and current blocking layer 6 and a reflector layer II 5 on the P-type AlGaInP and P-type GaAs layer 7 by using the GaAs-based epitaxial wafer;
b) after the GaAs-based epitaxial wafer is turned over by 180 degrees, the GaAs-based epitaxial wafer is used as a temporary substrate to be placed in an oven for high-temperature bonding with a silicon wafer, and a reflector layer II 5 at the lower end of the GaAs-based epitaxial wafer is fixedly connected with a reflector layer I3 at the upper end of the silicon wafer through a metal bonding layer 4;
c) sequentially removing the GaAs temporary substrate 18 and the buffer layer 19 above the GaAs-based epitaxial wafer by using an etching solution;
d) metal Cr is evaporated above the N-type GaAs layer 10, metal Au is evaporated above the metal Cr, the metal Cr layer and the metal Au layer form an electrode layer, a mask pattern is manufactured on the electrode layer by using photoresist, a pattern required by an extension electrode is manufactured, and the electrode layer except the pattern required by the extension electrode is etched by using corrosive liquid to form the extension electrode 11;
e) using photoresist to manufacture a mask pattern above the N-type AlGaInP layer 9, using the mask pattern to protect the extension electrode 11, etching off the N-type GaAs layer 10 outside the extension electrode 11, using roughening solution to roughen the upper surface of the N-type AlGaInP layer 9, and removing photoresist after roughening;
f) growing a metal Ni layer 13 on the coarsened N-type AlGaInP layer 9, growing a metal Au layer I14 on the metal Ni layer 13, and growing a metal Au layer I14 on the metal Au layer I14 by utilizing PECVD equipment
A barrier layer 15 formed by wet etching using a photoresist as a mask pattern
A plurality of through holes arranged along the horizontal direction are manufactured in the barrier layer 15;
g) in that
Growing a metal Ge layer 16 on the barrier layer 15, growing a metal Au layer II 17 on the metal Ge layer 16, forming a mask pattern on the metal Au layer II 17 to form a pattern required by a main electrode, and etching the metal Au layer II 17, the metal Ge layer 16, the metal Au layer II 17, the metal Au layer II, the,
The barrier layer 15, the metal Au layer I14 and the metal Ni layer 13 are corroded, and high-temperature alloying is carried out to form a main electrode 12;
h) thinning the bottom surface of the silicon substrate 2, and manufacturing an N electrode 1 below the thinned silicon substrate 2;
i) and splitting the prepared wafer to form a plurality of tube cores.
Because the metal Ni layer 13 and the metal Au layer 14 in the main electrode 12 make the bottom layer of the main electrode 12 have better adhesion with the N-type AlGaInP layer 9, the difference of metal Ni diffusion in the alloying process in the traditional process method is avoided by the too thick Ni layerThe conventional phenomenon that the thickness of metal Ni is below 300 angstroms, and then a relatively good adhesion layer is formed primarily through alloy, so that the requirement of low yield of bonding wires is relieved to a certain extent, but the phenomenon that main electrodes of the bonding wires fall off to a certain extent still exists in essence. In this patent application by
The barrier layer 15 is provided with a plurality of through holes to form a hole pattern, which can effectively block the excessive diffusion of the metal Ni layer 13, so that the bottom layer of the main electrode 12 can form good contact with the N-type AlGaInP layer 9, and the problem that the bonding pad is easy to fall off during bonding can be completely solved. The process method is simple and easy to operate, does not need to introduce special equipment, solves the problem of difficult wire bonding by using lower cost, and is suitable for the manufacturing process of all GaAs-based red light LED chips.
Example 1:
the temperature in the oven in step b) was 260 ℃ and the baking time was 1 hour.
Example 2:
the metal materials of the reflector layer I3 and the reflector layer II 5 are one or a combination of more of Ti, Pt, Au and AuBe, and the metal material of the metal bonding layer 4 In the step b) is one or a combination of more of Sn, In, Au and Ag.
Example 3:
the etching solution for etching the temporary substrate 18 in the step c) is a solution formed by mixing ammonia water, hydrogen peroxide and water according to the volume ratio of 1:1:1, and the etching time is 60 min. The corrosion buffer layer 19 needs to use strong acid, the corrosion solution can be selected from sulfuric acid or hydrochloric acid, preferably a solution prepared by mixing sulfuric acid and hydrogen peroxide according to the volume ratio of 1:1, and the corrosion time is 5 min.
Example 4:
in the step d), the thickness of the metal Cr is 50-200 angstroms, the thickness of the metal Au is 1000-10000 angstroms, the corrosive liquid is a solution formed by mixing iodine, potassium iodide and water according to the volume ratio of the solution of 1:1:1, and the corrosion time is 30 seconds.
Example 5:
the surface of the mask pattern in step e)The product is larger than the area of the extension electrode 11, so that the protection of the extension electrode 11 can be well performed, and the mask pattern preferably has an area of 2 to 10
。
Example 6:
in the step f), the thickness of the metal Ni layer 13 is larger than that of the metal Au layer I14, the thickness of the metal Ni layer 13 is 1000-3000 angstroms, the thickness of the metal Au layer I14 is 50-200 angstroms,
the thickness of the barrier layer 15 is 3000-10000 angstroms. The metal Ni layer 13 is too thin to form effective adhesion through alloying, the metal Ni layer 13 is too thick,
the barrier layer 15 does not accomplish effective blocking. The diffusion of the metal Ni layer 13 onto the top metal Au layer i 14 adversely affects the adhesion of the wire bond metal balls. The metal Au layer I14 on the metal Ni layer 13 is designed into a thin gold layer which mainly plays the role of primary barrier and is matched with the thin gold layer
The use of the barrier layer 15 makes the alloy easier to control and the securement of the main electrode wire can be effectively achieved by the combination of the appropriate parameters in the present invention.
Example 7:
the thickness of the metal Ge layer 16 in the step g) is 50-300 angstroms, and the thickness of the metal Au layer II 17 is 10000-30000 angstroms.
Example 8:
the temperature of the high-temperature alloy in the step g) is 350-450 ℃, and the time is 2-10 min.
Example 9:
the metal Ni layer 13 and the metal Au layer I14 in the step f) are manufactured by an evaporation or sputtering method, and the metal Ge layer 16 and the metal Au layer II 17 in the step g) are manufactured by an evaporation or sputtering method.
Claims (10)
1. The utility model provides a improve die preparation method of reversed polarity GaAs base AlGaInP ruddiness LED chip weld line performance, includes GaAs base epitaxial wafer and silicon chip, GaAs base epitaxial wafer is GaAs temporary substrate (18), buffer layer (19), N type GaAs layer (10), N type AlGaInP layer (9), quantum well layer (8) and P type AlGaInP and P type GaAs layer (7) respectively from bottom to top, the silicon chip is silicon substrate (2) and speculum layer I (3) from bottom to top respectively, its characterized in that includes the following step:
a) sequentially growing an ohmic contact and current blocking layer (6) and a reflecting mirror layer II (5) on the P-type AlGaInP and P-type GaAs layer (7) by using the GaAs-based epitaxial wafer;
b) after the GaAs-based epitaxial wafer is turned over by 180 degrees, the GaAs-based epitaxial wafer is used as a temporary substrate to be placed in an oven for high-temperature bonding with the silicon wafer, and a reflector layer II (5) at the lower end of the GaAs-based epitaxial wafer is fixedly connected with a reflector layer I (3) at the upper end of the silicon wafer through a metal bonding layer (4);
c) sequentially removing the GaAs temporary substrate (18) and the buffer layer (19) above the GaAs-based epitaxial wafer by using an etching solution;
d) metal Cr is evaporated above the N-type GaAs layer (10), metal Au is evaporated above the metal Cr, the metal Cr layer and the metal Au layer form an electrode layer, a mask pattern is manufactured on the electrode layer by using photoresist, a pattern required by an extension electrode is manufactured, the electrode layer except the pattern required by the extension electrode is etched by using corrosive liquid, and the extension electrode (11) is formed;
e) manufacturing a mask pattern above the N-type AlGaInP layer (9) by using photoresist, protecting the extension electrode (11) by using the mask pattern, etching off the N-type GaAs layer (10) in the region outside the extension electrode (11), roughening the upper surface of the N-type AlGaInP layer (9) by using roughening liquid, and performing photoresist removal treatment after roughening;
f) growing a metal Ni layer (13) on the coarsened N-type AlGaInP layer (9), growing a metal Au layer I (14) on the metal Ni layer (13), and growing on the metal Au layer I (14) by utilizing PECVD equipment
A barrier layer (15) formed by wet etching using the photoresist as a mask pattern
A plurality of through holes arranged along the horizontal direction are manufactured in the barrier layer (15);
g) in that
Growing a metal Ge layer (16) on the barrier layer (15), growing a metal Au layer II (17) on the metal Ge layer (16), making a mask pattern on the metal Au layer II (17) to make a pattern required by a main electrode, and using corrosive liquid to etch the metal Au layer II (17), the metal Ge layer (16) and the metal Au layer II (17) outside the pattern required by the main electrode,
The barrier layer (15), the metal Au layer I (14) and the metal Ni layer (13) are corroded, and high-temperature alloying is carried out to form a main electrode (12);
h) thinning the bottom surface of the silicon substrate (2), and manufacturing an N electrode (1) below the thinned silicon substrate (2);
i) and splitting the prepared wafer to form a plurality of tube cores.
2. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the temperature in the oven in step b) was 260 ℃ and the baking time was 1 hour.
3. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the metal materials of the reflecting mirror layer I (3) and the reflecting mirror layer II (5) are Ti and/or Pt and/or Au and/or AuBe, and the metal material of the metal bonding layer (4) In the step b) is Sn and/or In and/or Au and/or Ag.
4. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the corrosive liquid for corroding the temporary substrate (18) in the step c) is a solution formed by mixing ammonia water, hydrogen peroxide and water according to the volume ratio of 1:1:1, the corrosion time is 60min, the corrosive liquid for corroding the buffer layer (19) is a solution formed by mixing sulfuric acid and hydrogen peroxide according to the volume ratio of 1:1, and the corrosion time is 5 min.
5. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: in the step d), the thickness of the metal Cr is 50-200 angstroms, the thickness of the metal Au is 1000-10000 angstroms, the corrosive liquid is a solution formed by mixing iodine, potassium iodide and water according to the volume ratio of the solution of 1:1:1, and the corrosion time is 30 seconds.
6. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the area of the mask pattern in the step e) is larger than that of the extension electrode (11).
7. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the thickness of the metal Ni layer (13) in the step f) is larger than that of the metal Au layer I (14), the thickness of the metal Ni layer (13) is 1000-3000 angstroms, the thickness of the metal Au layer I (14) is 50-200 angstroms,
the thickness of the barrier layer (15) is 3000-10000 angstrom.
8. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the thickness of the metal Ge layer (16) in the step g) is 50-300 angstroms, and the thickness of the metal Au layer II (17) is 10000-30000 angstroms.
9. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the temperature of the high-temperature alloy in the step g) is 350-450 ℃, and the time is 2-10 min.
10. The method for manufacturing the die for improving the bonding performance of the reversed-polarity GaAs-based AlGaInP red LED chip according to claim 1, wherein: the metal Ni layer (13) and the metal Au layer I (14) in the step f) are manufactured by an evaporation or sputtering method, and the metal Ge layer (16) and the metal Au layer II (17) in the step g) are manufactured by the evaporation or sputtering method.
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