CN102544234A - Heat treatment method for heterogeneous crystalline silicon solar battery passivation layer - Google Patents
Heat treatment method for heterogeneous crystalline silicon solar battery passivation layer Download PDFInfo
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- CN102544234A CN102544234A CN2012100428443A CN201210042844A CN102544234A CN 102544234 A CN102544234 A CN 102544234A CN 2012100428443 A CN2012100428443 A CN 2012100428443A CN 201210042844 A CN201210042844 A CN 201210042844A CN 102544234 A CN102544234 A CN 102544234A
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- heat treatment
- solar battery
- silicon solar
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- 238000002161 passivation Methods 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000010438 heat treatment Methods 0.000 title claims abstract description 29
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 49
- 239000010703 silicon Substances 0.000 claims abstract description 49
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000001257 hydrogen Substances 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 23
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 15
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 239000011261 inert gas Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000004904 shortening Methods 0.000 abstract description 3
- 238000004050 hot filament vapor deposition Methods 0.000 abstract 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012958 reprocessing Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a heat treatment method for a heterogeneous crystalline silicon solar battery passivation layer. The method comprises the following steps: preparing a heterogeneous crystalline silicon solar battery passivation layer film by a plasma enhanced chemical vapor deposition (PECVD) method or a hot filament chemical vapor deposition (CVD) method; and treating a silicon wafer of the passivation layer at the temperature of between 200 and 300 DEG C for 1 to 60 minutes under the atmosphere of hydrogen plasma-containing hydrogen generated by the PECVD method; or treating the silicon wafer of the passivation layer at the temperature of 200 to 300 DEG C for 1 to 60 minutes under the atmosphere of hydrogen atom-containing hydrogen generated by the hot filament CVD method. According to the method, the passivation effect of the passivation layer on the surface of the silicon wafer can be improved, so that conversion efficiency of the solar battery can be increased. Compared with the conventional inert gas atmosphere, hydrogen atmosphere or vacuum heat treatment process, the method has the advantages of greatly shortening the treatment process time and improving production efficiency and has a good application prospect.
Description
Technical field
The invention belongs to the reprocessing field of solar cell passivation layer, particularly a kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer.
Background technology
Solar-energy photo-voltaic cell is one of the most promising renewable energy utilization mode at present.Wherein crystal silicon solar battery is owing to its aboundresources, and the technical maturity advantages of higher occupies and incite somebody to action the leading position of occuping market for a long time.In all kinds of crystal silicon solar battery technology that developing at present, the HIT battery of producing with Japanese Sanyo company is that the silicon/crystalline silicon heterojunction solar cell of representative gets more and more people's extensive concerning with the advantages such as technology maturity of its high conversion efficiency, suitable scale of mass production.
People generally believe that the crystal silicon chip surface passivation layer is the key point of decision silicon/crystalline silicon heterojunction solar cell performance to the passivation effect of silicon chip surface.The conversion efficiency of the HIT battery of Sanyo company has reached 23.0%.At present, the material that is used as this passivation layer mainly contains a-Si:H film that adopts PECVD method or the preparation of heated filament CVD method or the a-SiOx:H film that the PECVD method prepares, and has all obtained passivation effect preferably.For Fz silicon, minority carrier life time can reach the ms magnitude after transpassivation.But it is found that, after preparing passivation layer, carry out heat-treating at 200～300 ℃ under Ar gas atmosphere, hydrogen atmosphere or the vacuum condition, can further improve the passivation effect of passivation layer silicon chip surface.Wherein hydrogen atmosphere is optimum.The minority carrier life time of Fz silicon can reach 5～6ms after the heat treatment.The passivation effect of a-Si:H or a-SiOx:H comes from the structure of the si-h bond of film and silicon chip surface formation, under suitable temperature and atmosphere, heat-treats, and has changed the structure of si-h bond in the film, thereby has improved its passivation effect.But this heat treatment process required time is longer, needs several hrs even longer, and this point is unfavorable for large batch of suitability for industrialized production.
Summary of the invention
Technical problem to be solved by this invention provides a kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer; This method can be improved the passivation effect of passivation layer to silicon chip surface; Thereby improve the conversion efficiency of solar cell; And, greatly the shortening heat treatment process time, enhance productivity than inert gas atmosphere, hydrogen atmosphere or the vacuum heat treatment process of routine.
The heat treatment method of a kind of heterojunction crystal silicon solar battery passivation layer of the present invention comprises:
Adopt PECVD method or heated filament CVD legal system to be equipped with heterojunction crystal silicon solar battery passivation layer film,, the silicon chip of passivation layer is handled 1min～60min in 200～300 ℃ with the hydrogen atmosphere that contains hydrogen plasma that produces in the PECVD method; Or the hydrogen atmosphere of the hydrogen atoms that produces with heated filament CVD method, the silicon chip of passivation layer is handled 1min～60min in 200～300 ℃.
Said passivation layer film is thicker than silicon/crystalline silicon heterojunction solar cell device architecture desired thickness.
The said technological parameter of the silicon chip of passivation layer being handled with the hydrogen atmosphere that contains hydrogen plasma that produces in the PECVD method by: being added radio frequency power density on the pole plate is 0.01～1.2W/cm
2, air pressure is 5～100Pa.
The technological parameter that the hydrogen atmosphere of the said hydrogen atoms that produces with heated filament CVD method is handled the silicon chip of passivation layer is: the temperature of heated filament is 1500～2200 ℃, and air pressure is 0.1～50Pa.
Beneficial effect
The present invention adopts the active hydrogen atmosphere of high energy to heat-treat as the silicon chip that is used for the silicon/crystalline silicon heterojunction solar cell of passivation layer possessing a-Si:H or a-SiOx:H; Can improve the passivation effect of passivation layer to silicon chip surface; Thereby improve the conversion efficiency of solar cell, and than inert gas atmosphere, hydrogen atmosphere or the vacuum heat treatment process of routine, shortening heat treatment process time greatly; Enhance productivity, have a good application prospect.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.Should be understood that in addition those skilled in the art can do various changes or modification to the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiment 1
Cleaning a-Si:H that clean N-type silicon both side surface respectively prepares one deck 25nm as passivation layer with the PECVD method, the minority carrier life time after the passivation is 320 μ s.
High energy active hydrogen plasma so that the PECVD method produces is heat-treated the silicon chip that has deposited passivation layer, and concrete technological parameter is following: adopt the radio frequency source activated plasma of 13.56MHz, adding radio frequency power density on the pole plate is 0.08W/cm
2, air pressure 25Pa, silicon chip are heated to 280 ℃, time 30min.
Minority carrier life time has reached 600 μ s after the heat treatment, and the reduced thickness of passivation layer has arrived 15nm.As adopting conventional heat treatment, heat treatment time needs about 120min.
Embodiment 2
Cleaning a-Si:H that clean N-type silicon both side surface respectively prepares one deck 20nm as passivation layer with heated filament CVD method, the minority carrier life time after the passivation is 350 μ s.
High energy active hydrogen atom atmosphere so that heated filament CVD method produces is heat-treated the silicon chip that has deposited passivation layer, and concrete technological parameter is following: adopt tungsten filament as heated filament, the hot-wire temperature is heated to 1800 ℃, and air pressure 10Pa, silicon chip are heated to 220 ℃, time 25min.
Minority carrier life time has reached 680 μ s after the heat treatment, and passivation layer thickness has been thinned to 12nm.As adopting conventional heat treatment, heat treatment time needs about 120min.
Embodiment 3
Cleaning a-Si:H that clean N-type silicon both side surface respectively prepares one deck 25nm as passivation layer with the PECVD method, the minority carrier life time after the passivation is 320 μ s.
High energy active hydrogen plasma so that the PECVD method produces is heat-treated the silicon chip that has deposited passivation layer, and concrete technological parameter is following: adopt the radio frequency source activated plasma of 13.56MHz, adding radio frequency power density on the pole plate is 0.8W/cm
2, air pressure 75Pa, silicon chip are heated to 260 ℃, time 40min.
Minority carrier life time has reached 580 μ s after the heat treatment, and the reduced thickness of passivation layer has arrived 14nm.As adopting conventional heat treatment, heat treatment time needs about 120min.
Embodiment 4
Cleaning a-Si:H that clean N-type silicon both side surface respectively prepares one deck 20nm as passivation layer with heated filament CVD method, the minority carrier life time after the passivation is 350 μ s.
High energy active hydrogen atom atmosphere so that heated filament CVD method produces is heat-treated the silicon chip that has deposited passivation layer, and concrete technological parameter is following: adopt tungsten filament as heated filament, the hot-wire temperature is heated to 2100 ℃, and air pressure 30Pa, silicon chip are heated to 210 ℃, time 10min.
Minority carrier life time has reached 670 μ s after the heat treatment, and passivation layer thickness has been thinned to 15nm.As adopting conventional heat treatment, heat treatment time needs about 120min.
Claims (4)
1. the heat treatment method of a heterojunction crystal silicon solar battery passivation layer comprises:
Adopt PECVD method or heated filament CVD legal system to be equipped with heterojunction crystal silicon solar battery passivation layer film,, the silicon chip of passivation layer is handled 1min～60min in 200～300 ℃ with the hydrogen atmosphere that contains hydrogen plasma that produces in the PECVD method; Or the hydrogen atmosphere of the hydrogen atoms that produces with heated filament CVD method, the silicon chip of passivation layer is handled 1min～60min in 200～300 ℃.
2. the heat treatment method of a kind of heterojunction crystal silicon solar battery passivation layer according to claim 1 is characterized in that: said passivation layer film is thicker than silicon/crystalline silicon heterojunction solar cell device architecture desired thickness.
3. the heat treatment method of a kind of heterojunction crystal silicon solar battery passivation layer according to claim 1 is characterized in that: the said technological parameter of the silicon chip of passivation layer being handled with the hydrogen atmosphere that contains hydrogen plasma that produces in the PECVD method by: being added radio frequency power density on the pole plate is 0.01～1.2W/cm
2, air pressure is 5～100Pa.
4. the heat treatment method of a kind of heterojunction crystal silicon solar battery passivation layer according to claim 1; It is characterized in that: the technological parameter that the hydrogen atmosphere of the said hydrogen atoms that produces with heated filament CVD method is handled the silicon chip of passivation layer is: the temperature of heated filament is 1500～2200 ℃, and air pressure is 0.1～50Pa.
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| CN201210042844.3A CN102544234B (en) | 2012-02-23 | 2012-02-23 | A kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer |
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| CN201210042844.3A CN102544234B (en) | 2012-02-23 | 2012-02-23 | A kind of heat treatment method of heterojunction crystal silicon solar battery passivation layer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845702A (en) * | 2017-12-04 | 2018-03-27 | 浙江晶科能源有限公司 | The passivation layer processing method and crystal silicon solar batteries of a kind of crystalline silicon wafer |
| CN108417482A (en) * | 2018-03-23 | 2018-08-17 | 浙江师范大学 | The preparation method of ultra-thin silicon dioxide passivation layer |
| CN109449257A (en) * | 2018-05-04 | 2019-03-08 | 中国科学院上海微***与信息技术研究所 | Hydrogenation treatment method and silicon heterojunction solar battery preparation method after noncrystal membrane |
| CN111952414A (en) * | 2020-08-21 | 2020-11-17 | 晶科绿能(上海)管理有限公司 | Post-cutting passivation method of silicon-based semiconductor device and silicon-based semiconductor device |
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| CN101235492A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Chemical annealing method for making amorphous silicon battery more stable |
| US20100032011A1 (en) * | 2006-09-29 | 2010-02-11 | Erik Sauar | Back contacted solar cell |
| CN101834221A (en) * | 2009-03-13 | 2010-09-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of absorption layer of thin film solar cell |
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| US20100032011A1 (en) * | 2006-09-29 | 2010-02-11 | Erik Sauar | Back contacted solar cell |
| CN101235492A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Chemical annealing method for making amorphous silicon battery more stable |
| CN101834221A (en) * | 2009-03-13 | 2010-09-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of absorption layer of thin film solar cell |
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| S. RATTANAPAN,ET AL: "Hydrogen plasma treatment for improving bulk passivation quality of c-Si solar cells", 《CURRENT APPLIED PHYSICS》 * |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107845702A (en) * | 2017-12-04 | 2018-03-27 | 浙江晶科能源有限公司 | The passivation layer processing method and crystal silicon solar batteries of a kind of crystalline silicon wafer |
| CN108417482A (en) * | 2018-03-23 | 2018-08-17 | 浙江师范大学 | The preparation method of ultra-thin silicon dioxide passivation layer |
| CN109449257A (en) * | 2018-05-04 | 2019-03-08 | 中国科学院上海微***与信息技术研究所 | Hydrogenation treatment method and silicon heterojunction solar battery preparation method after noncrystal membrane |
| CN111952414A (en) * | 2020-08-21 | 2020-11-17 | 晶科绿能(上海)管理有限公司 | Post-cutting passivation method of silicon-based semiconductor device and silicon-based semiconductor device |
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| CN102544234B (en) | 2016-02-17 |
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Effective date of registration: 20160812 Address after: 225400 Jiangsu city of Taizhou Province Branch Road, Taixing city high tech Industrial Park on the west side Patentee after: JIANGSU WANJI DRIVE SCIENCE AND TECHNOLOGY Co.,Ltd. Address before: 201108 Shanghai, Minhang District Jin Road, room 4299, No. 208 Patentee before: Shanghai Zhongzhi Optical Fiber Communication Co.,Ltd. |
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