CN102543430A - Pyrochlore film multilayer ceramic capacitor and low-temperature preparation method thereof - Google Patents

Abstract

The invention relates to a pyrochlore film multilayer ceramic capacitor and a low-temperature preparation method thereof. According to a film deposition technology, based on the structural characteristics of a multilayer capacitor and the characteristic that a pyrochlore film prepared at a low temperature (20-200 DEG C) has high dielectric constant, a mask or photo-etching technology is utilized to alternately and repeatedly prepare base metal electrodes and bismuth zinc niobium or bismuth magnesium niobium medium film layers on a substrate such as an organic substrate, thereby forming a film multilayer ceramic capacitor. The film multilayer ceramic capacitor is prepared at a low temperature, so that aluminum, copper, nickel or other base metals can be taken as the electrode material of the film multilayer ceramic capacitor. Besides, due to the low-temperature preparation and the excellent technical compatibility with an organic circuit board and a multilayer printed circuit board, the film multilayer ceramic capacitor can be directly prepared on the organic circuit board or the multilayer printed circuit board. The dielectric constant of the pyrochlore film which is prepared by magnetron sputtering and depositing at a low temperature is higher than 60, and the dielectric loss is less than 2%. The film multilayer ceramic capacitor is a novel embedded film multilayer ceramic capacitor and has the characteristics that low-temperature preparation, small volume, low use voltage, high reliability, high capacity, small loss, low cost, and the like.

Description

Burnt green stone thin-film multilayer ceramic capacitor and low temperature preparation method thereof

Technical field:

The invention relates to the invention of new electronic component.The present invention relates to prepare down the preparation method of the high-capacitance thin-film multilayer ceramic capacitor that constitutes by Jiao's green stone thin dielectric rete and electrodes in base metal layer at low temperature (20～200 degree Celsius).Be particularly related to the method for preparing burnt green stone thin-film multilayer ceramic capacitor at low temperatures with radio-frequency magnetron sputter method.

Background technology:

Ceramic capacitor is the critical elements of using in microelectric technique and the photoelectron technology always.In order to adapt to the requirement of microelectric technique, all be devoted to the research of multilayer ceramic capacitor both at home and abroad to miniaturization, integrated and complanation.Multilayer ceramic capacitor (MLCC) uses the chip pottery to do lamination; Through the electrode that applies each lamination is connected; Essence is the area S that has enlarged electric capacity, thereby makes it have that volume is little, capacity is big, mechanical strength is high, interior sense is little, high frequency performance is good, the reliability advantages of higher.MLCC is widely used in miniaturization and the high electronic device field of reliability requirement.The technology that preparation is at present adopted mostly is The tape casting, and thickness of monolayer is the thinnest to be about 1 μ m.In order to improve the capacitance of its single capacitor, should increase dielectric dielectric constant, reduce dielectric layer thickness.

We know that the capacitance C of capacitor has following relation:

$C=\frac{\mathrm{\ϵS}}{d}---\left(1\right)$

Wherein ε is dielectric dielectric constant; S is an electrode area, and d is a dielectric thickness.And for multilayer ceramic capacitor, capacitance C has following relation:

C＝ε(n-1)S/d (2)

Wherein n is the electrode number of plies.

Visible by formula (2), confirm multilayer ceramic capacitor for the number of plies, active electrode size, the approach that improves condenser capacity has two kinds, and a kind of is to improve dielectric DIELECTRIC CONSTANTS, and a kind of is to reduce dielectric layer thickness d.At present one of approach extensively adopting of institute is the dielectric dielectric constant of raising, the single or multiple lift ceramic capacitor that promptly adopts the dielectric ceramic of high-k to process as dielectric substance, but these dielectric materials generally need carry out sintering under higher temperature.This electrode material that just requires to be adopted must be at high temperature to be difficult for oxidized precious metal, has increased the cost of multilayer ceramic capacitor to a great extent.Another approach that improves condenser capacity is to reduce dielectric layer thickness d between two electrodes.For the The tape casting that extensively adopts at present, thickness of monolayer is the thinnest to be about 1 μ m, and the thickness that reduces the The tape casting film forming again is very difficult.

If adopt thin-film technique to make multilayer ceramic capacitor, will reduce monofilm thickness d greatly.This not only can improve the capacitance of single-layer capacitor to a great extent, also can under equal volume, increase the number of plies of capacitor, thereby has also increased the capacitance of single multilayer ceramic capacitor.The preparation method of film has multiple; Mainly be divided into physical method and chemical method, method wherein commonly used has rf magnetron sputtering (RF-Sputtering), pulsed laser deposition (Pulsed Laser Deposition), molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), sol-gel process (Sol-Gel) and metallo-organic compound decomposition method (MOD) etc.Wherein the used radio-frequency magnetron sputter method of the present invention is a kind of film preparing technology of comparative maturity, and this method is the ion bombardment target that is utilized in high-speed motion under the electric field action, and atom under bombarding from target or ion cluster are deposited on substrate and form film.The film roughness that the major advantage of this method is the technology comparative maturity, deposited is little, good compactness, can obtain larger area epitaxial film etc.

Yet in most report, making the used ceramic dielectric layer of multilayer ceramic capacitor need be at higher sintering temperature.For example be the multilayer ceramic capacitor of barium titanate for dielectric, its dielectric layer sintering temperature need be about 1200 ℃, even higher.And if sintering process is carried out in inert atmosphere or reducing atmosphere, then can in as dielectric oxide skin(coating), produce more oxygen room, cause dielectric dielectric loss to increase like this, the loss of multilayer ceramic capacitor is increased.

Below be list of references relevant and the existing patent that the applicant retrieves with the present invention:

1.Zhibin?Tian，Xiaohui?Wang，Like?Shu，Tian?Wang，Tae-Ho?Song，Zhilun?Gui，and?Longtu?Li，Journal?of?the?American?Ceramic?Society?92(4)，830(2009).

2.Hiroshi?KISHI，Youichi?MIZUNO?and?Hirokazu?CHAZONO，Jpn.J.Appl.Phys.Vol.42(2003)，pp1-15

3.Karan?N?K，Saavedra-Arias?J?J，Perez?M，Thomas?R，and?Katiyar?R?S.High?energy?density?metal-insulator-metal?capacitors?with?Ba[(Ni _1/2，W _1/2) _0.1Ti _0.9]O ₃thin?film.Appl.Phys.Lette.012903(2008)

4.Ogihara?H，Randall?C?A，and?Trolier-Mckinstry?S.High-energy?density?capacitors?utilizing0.7BaTiO ₃-0.3?BiScO ₃?ceramics.J.Am.Ceram.Soc.92(8)：1719-1724(2009).

5.Yuji?Imamiya，Isaku?Kanno，Ryuji?Yokokawa，and?Hidetoshi?Kotera.Multilayer?Thin-Film?Capacitor?Fabricated?by?Radio-Frequency?Magnetron?Sputtering.Jpn.J.Appl.Phys.Vol.50(2011)09NA01

6.Jong-Hyun?PARK，Cheng-Ji?XIAN，Nak-Jin?SEONG，Soon-Gil?YOON?et.al.Bismuth-Based?Pyrochlore?Thin?Films?Deposited?at?Low?Temperatures?for?Embedded?Capacitor?Applications.Jpn.J.Appl.Phys.Vol.45，No.9B，2006，pp.7325-7328

7. Wang Xiao is intelligent etc., ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor material and preparation method thereof, [P], Chinese patent: CN1397957A, 2003-02-19

8. Yao Xi etc., high-performance low-temperature sintered negative temperature coefficient dielectric ceramic, [P], Chinese patent: CN1107128A, 1995-08-23

Summary of the invention:

The objective of the invention is to utilize radio-frequency magnetron sputter method, preparation has the burnt green stone dielectric film of high-k under low temperature (Celsius 20～200 degree), on organic substrate.As the electrode preparation film capacitor,, obtain the thin-film multilayer ceramic capacitor with the base metal sedimentary deposit through repeating above-mentioned technology.

The technical scheme that adopts for the present invention that achieves the above object is:

1, with organic substrate as substrate; Consider that electrode material copper (Cu), aluminium (Al) and the nickel adhesive force on organic substrate such as (Ni) are relatively poor; Plated metal titanium (Ti) film is as adhesion layer on organic substrate earlier in the preparation process, and plated metal copper (Cu), aluminium (Al) or nickel (Ni) film are as hearth electrode then.On titanium layer, deposit the metal level that a layer thickness is about 50-200nm with radio frequency magnetron sputtering method, as bottom electrode layer, the metal that can be used as this layer has Cu, Al and Ni etc.

2, the burnt green stone thin dielectric film (as: BZN, BMN, BCN, BTO, BNO, BCN etc.) about using the radio frequency magnetron sputtering method deposit thickness on the metal level with high-k as 300nm.

3, at metal level in the sputter once more on the dielectric film layer, as the top electrode of film capacitor.

4, the plural layers capacitor obtains through repeating a plurality of film capacitors unit, and number of repeat unit n is 5～200.

In the said technical scheme, at the bottom of the organic group that step 1 adopted phenolic resins, epoxy resin or polytetrafluoroethylene.During magnetron sputtering, the base vacuum degree is 1.8 * 10 ^-4Pa～2.0 * 10 ^-4Pa.During the deposition of adhesion Titanium, working gas is an argon gas, and operating air pressure is 0.4Pa～0.5Pa, and radio frequency source power is 300W～370W, about 50 minutes of sputtering time.During the plated metal hearth electrode, working gas is an argon gas, and operating air pressure is 0.45Pa～0.50Pa, and radio frequency source power is 100W～150W, the about 20min～30min of sputtering time.

In the said technical scheme, step 2 deposition BZN film.Earlier sputtering chamber is evacuated to high vacuum, base vacuum air pressure is 1.8 * 10 ^-4Pa～2.0 * 10 ^-4Pa.Charge into argon gas and oxygen again and carry out rf magnetron sputtering, operating air pressure is 0.5Pa～3Pa during sputter, and radio frequency source power is 85W～120W.Sputtering atmosphere Ar: O ₂Be 100: 0～75: 25, sputtering time is approximately 2 hours, and the gained film thickness is 100nm～500nm.

In the said technical scheme, the film pattern that step 1,2,3 is deposited all is (can adopt sacrifice layer stripping technology or hardmask technology to realize) of adopting the micro fabrication sputtering sedimentation.

Advantage of the present invention:

1. propose to adopt radio-frequency magnetron sputter method, sputter has the high dielectric-constant dielectric film between two-layer electrode, and whole process is carried out under room temperature or low temperature (being lower than 200 ℃).If sputter temperature is a room temperature, do not need heating in the deposition process of thin dielectric rete and electrode layer, so just avoided the oxidation of metal electrode.The technology that the present invention proposes can not used oxidation resistant precious metal, like platinum (Pt), gold (Au) and silver (Ag), and is to use relatively inexpensive metallic copper (Cu), aluminium (Al) or nickel (Ni), makes the cost of manufacture of thin-film ceramics capacitor reduce.

2. carry out under low temperature (Celsius 20～200 degree) in whole deposition process, this just make process that the present invention proposes can with organic substrate process compatible.Compare with prior art, this capacitor not only capacitance is big, and with low cost.

The present invention prepares the capacitor that dielectric is the dielectric film layer, seeing that the film thickness of the high-k of dielectric film and radio-frequency magnetron sputter method preparation is very little, can improve the capacitance of capacitor.Compare with background technology, this capacitor has that volume is little, capacitance is big, reliability is high and small loss and other features.

Description of drawings:

Fig. 1 is a plural layers ceramic capacitor section structure sketch map of the present invention.

Fig. 2 is a plural layers ceramic capacitor schematic top plan view of the present invention

Fig. 3 is the dielectric constant frequency spectrum and the loss frequency spectrum of rf magnetron sputtering BZN film under the room temperature among the present invention.

Fig. 4 is the leakage current collection of illustrative plates of rf magnetron sputtering BZN film under the room temperature among the present invention.

Embodiment:

Show 5 single thin film capacitor units among Fig. 1, with and connected mode.Alternately dislocation is so that each single thin film capacitor can be arranged in parallel to show the metal electric conducting shell among the figure, and it is parallelly connected to form capacitor.For capacitor model, actual effective area refers to the mutual area that overlaps between electrode for inserting, and E1 and E2 are the extraction locations of two electrodes.

Black region is an electrode position among Fig. 2, and white portion is a thin-film ceramics, and two electrode insulations are good up and down in order to make, and the thin-film ceramics region area is bigger slightly than electrode zone area.

Fig. 3 is the dielectric constant frequency spectrum and the loss frequency spectrum of rf magnetron sputtering BZN film under the room temperature among the present invention.Individual layer BZN film thickness is about 200nm, and under 10kHz, dielectric constant is about 60, and dielectric loss is about 1%.

Embodiment 1

So that thermal oxide layer SiO to be arranged ₂(100) orientation P type silicon make substrate, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm, back in-situ deposition one layer thickness be metal conducting layer Pt about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above _1.5ZnNb _1.5O ₇, BZN) film is that Pt metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60 (this laboratory is with the dielectric property of the BZN film of magnetron sputtering method preparation), its computational methods are:

The electric capacity of BZN film:

$C_{\mathrm{BZN}}=\frac{{\mathrm{\ϵ}}_0{\mathrm{\ϵ}}_{r}A}{d}=\frac{8.85\×{10}^{-12}\×60\×{1\mathrm{mm}}^2}{200\mathrm{nm}}=2.66\×{10}^{-9}F$

Plural layers ceramic capacitor capacitance for being of five storeys is:

C _total＝5C _BZN＝1.33×10 ^-8F

For there being 100 layers plural layers ceramic capacitor capacitance to be:

C _total＝100C _BZN＝2.66×10 ^-7F

For n layer film ceramic capacitor capacitance be:

C _total＝nC _BZN＝n×2.66×10 ^-9F

Embodiment 2

So that thermal oxide layer SiO to be arranged ₂(100) orientation P type silicon make substrate, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm, back in-situ deposition one layer thickness be metal conducting layer Au about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above _1.5ZnNb _1.5O ₇, BZN) film is that Au metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60 (this laboratory is with the dielectric property of the BZN film of magnetron sputtering method preparation), the capacitance that calculates is 2.66 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.33 * 10 ^-8F is 2.66 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.66 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 3

So that thermal oxide layer SiO to be arranged ₂(100) orientation P type silicon make substrate, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm, back in-situ deposition one layer thickness be metal conducting layer Al about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above _1.5ZnNb _1.5O ₇, BZN) film is that Al metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60 (this laboratory is with the dielectric property of the BZN film of magnetron sputtering method preparation), the capacitance that calculates is 2.66 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.33 * 10 ^-8F is 2.66 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.66 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 4

Alumina ceramic plate with 95% is as substrate; One layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm; Back in-situ deposition one layer thickness be metal conducting layer Al about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above _1.5ZnNb _1.5O ₇, BZN) film is that Al metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60 (this laboratory is with the dielectric property of the BZN film of magnetron sputtering method preparation), the capacitance that calculates is 2.66 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.33 * 10 ^-8F is 2.66 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.66 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 5

As substrate, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm with the phenolic resins sheet, back in-situ deposition one layer thickness be metal conducting layer Al about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above _1.5ZnNb _1.5O ₇, BZN) film is that Al metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60 (this laboratory is with the dielectric property of the BZN film of magnetron sputtering method preparation), the capacitance that calculates is 2.66 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.33 * 10 ^-8F is 2.66 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.66 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 6

As substrate, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm with teflon plate, back in-situ deposition one layer thickness be metal conducting layer Al about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above _1.5ZnNb _1.5O ₇, BZN) film is that Al metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60 (this laboratory is with the dielectric property of the BZN film of magnetron sputtering method preparation), the capacitance that calculates is 2.66 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.33 * 10 ^-8F is 2.66 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.66 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 7

As substrate, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm with the phenolic resins sheet, back in-situ deposition one layer thickness be metal conducting layer Ni about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above _1.5ZnNb _1.5O ₇, BZN) film is that Ni metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60 (this laboratory is with the dielectric property of the BZN film of magnetron sputtering method preparation), the capacitance that calculates is 2.66 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.33 * 10 ^-8F is 2.66 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.66 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 8

As sinking to the bottom, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm with the phenolic resins sheet, back in-situ deposition one layer thickness be metal conducting layer Ni about 180nm as hearth electrode, and then deposit the bismuth zinc niobium (Bi about 200nm in the above ₂Zn _2/3Nb _4/3O ₇, BZN) film is that Ni metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BZN film of 200nm is 60, the capacitance that calculates is 2.66 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.33 * 10 ^-8F is 2.66 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.66 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 9

As sinking to the bottom, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm with the phenolic resins sheet, back in-situ deposition one layer thickness be metal conducting layer Ni about 180nm as hearth electrode, and then deposit the bismuth magnesium niobium (Bi about 200nm in the above _1.5MgNb _1.5O ₇, BMN) film is that Ni metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BMN film of 200nm is 40, the capacitance that calculates is 1.77 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 8.85 * 10 ^-9F is 1.77 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 1.77 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Embodiment 10

As sinking to the bottom, one layer thickness of sputter in the above is the metal electric conducting shell Ti about 100nm with the phenolic resins sheet, back in-situ deposition one layer thickness be metal conducting layer Ni about 180nm as hearth electrode, and then deposit the bismuth copper niobium (Bi about 200nm in the above _1.5CuNb _1.5O ₇, BCN) film is that Ni metal conducting layer about 180nm is as top electrode depositing a layer thickness on the thin layer more at last.Electrode area is elected 1mm as ², the dielectric constant of the BCN film of 200nm is 45, the capacitance that calculates is 2.00 * 10 ^-9F, for the plural layers ceramic capacitor that is of five storeys, calculating capacitance is 1.00 * 10 ^-8F is 2.00 * 10 for 100 layers plural layers condenser capacities ^-7F is n * 2.00 * 10 for n layer film ceramic capacitor capacitance ^-9F, its computational methods are the same.

Claims (10)

1. one kind deposits burnt green feldspar film at low temperatures as dielectric multilayer ceramic capacitor preparation method, it is characterized in that, comprises the steps:

1) on backing material, utilize mask or photoetching process, adopt radio-frequency magnetron sputter method plated metal titanium (Ti) film as adhesion layer, deposited copper (Cu), aluminium (Al) or nickel (Ni) metallic film are as electrode again;

2) on metallic film, utilize mask or photoetching process, adopt radio-frequency magnetron sputter method, deposit burnt green stone thin dielectric rete at low temperatures;

3) again on the thin dielectric rete, utilize mask or photoetching process, adopt radio-frequency magnetron sputter method deposition layer of metal copper (Cu), aluminium (Al) or nickel (Ni) metal film layer top electrode as this one deck, also be simultaneously the hearth electrode of one deck down;

4) repeatedly repeat 2) and 3) step, prepare burnt green stone thin-film multilayer ceramic capacitor.

2. preparation method as claimed in claim 1 is characterized in that: said backing material is the organic material substrate: phenolic resins, epoxy resin or polytetrafluoroethylene.

3. preparation method as claimed in claim 1 is characterized in that: said backing material is organic substrate or printed circuit board (PCB).

4. preparation method as claimed in claim 1 is characterized in that: the scope of said low temperature is 20～200 degree Celsius.

5. preparation method as claimed in claim 1 is characterized in that: adhesion layer Titanium (Ti) is in the rf magnetron sputtering appearance, to deposit gained, and concrete technology is: earlier sputtering chamber is evacuated to high vacuum, base vacuum air pressure is 1.8 * 10 ^-4Pa～2.0 * 10 ^-4Pa; Charge into Ar then and carry out sputter, operating air pressure is 0.4Pa～0.5Pa, and radio frequency source power is 300W～370W, about 30 minutes～50 minutes of sputtering time.

6. preparation method as claimed in claim 1 is characterized in that Jiao Lvshi is specially: BZN, chemical composition is bismuth zinc niobium Bi _1.5ZnNb _1.5O ₇Or Bi ₂Zn _2/3Nb _4/3O ₇; Or BMN, chemical composition is bismuth magnesium niobium Bi _1.5MgNb _1.5O ₇Or Bi ₂Mg _2/3Nb _4/3O ₇Or BTO, chemical composition is bismuth titanium Bi ₂Ti ₂O ₇BNO, chemical composition is bismuth niobium Bi ₃NbO ₇Or BCN, chemical composition is bismuth copper niobium Bi ₂Cu _2/3Nb _4/3O ₇

7. preparation method as claimed in claim 1 is characterized in that: burnt green feldspar single film layer thickness is 100nm～300nm; In deposition process, charge into argon gas and oxygen and carry out rf magnetron sputtering, operating air pressure is 0.5Pa～3Pa during sputter, and radio frequency source power is 85W～120W, and sputtering time 1～2 hour, underlayer temperature are less than 200 ℃, and the after-baking temperature is less than 200 ℃.

8. preparation method as claimed in claim 1 is characterized in that: the number of plies of thin dielectric film is in 5～200 layers of scope.

9. preparation method as claimed in claim 1 is characterized in that: adopt micro fabrication sputtering sedimentation, sacrifice layer stripping technology or hardmask technology film and the electrode patternization to deposition.

10. according to the prepared capacitor of the preparation method of above-mentioned each claim.

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