CN102522982A - Bus interface output stage driving circuit with overvoltage, undervoltage and overcurrent protection functions - Google Patents
Bus interface output stage driving circuit with overvoltage, undervoltage and overcurrent protection functions Download PDFInfo
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Abstract
The invention relates to an output stage driving circuit, in particular to a bus interface output stage driving circuit with overvoltage, undervoltage and overcurrent protection functions, which belongs to the technical field of bus driving circuits. An input end of the bus interface output stage driving circuit is connected with a driving circuit control module, an output end of the bus interface output stage driving circuit is connected with a bus interface, and a connecting end V_BP and a connecting end V_BN are respectively connected with a biased source. Besides, the bus interface output stage driving circuit comprises a PMOS(P-channel metal oxide semiconductor) pull-up driving circuit and an NMOS(N-channel metal oxide semiconductor) pull-down driving circuit which can be matched with each other correspondingly according to control signals input from the driving circuit control module and voltage of the bus interface, so that overvoltage, undervoltage and overcurrent protection can be realized effectively and reliability of the output stage driving circuit is improved.
Description
Technical field
The present invention relates to a kind of output stage drive circuit, especially a kind of EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function belongs to the technical field of bus driving circuits.
Background technology
Fig. 1 is the block diagram of existing bus driving circuits.In general, bus driving circuits is made up of two parts, and a part is the control logic that drives output-stage circuit, and another part is the bus driver output-stage circuit.The control module of drive circuit provides signal to the output stage drive circuit, and the output stage drive circuit is accomplished the driving to bus; And under the bus abnormal conditions, to the protection of output stage drive circuit self with to the isolation of bus.
Generally speaking; For the out drive stage that drives bus; Because supply voltage that can outlet bus voltage specific output driving stage on the bus is high or the low situation of low level of specific output driving stage, the excessive and infringement bus output stage drive circuit of the drive current that can cause bus output stage drive circuit unusually flat and voltage on bus sometimes.So when design bus output stage drive circuit, realize the concrete implementation of output stage drive circuit to the particular case of these buses.
Summary of the invention
The objective of the invention is to overcome the deficiency that exists in the prior art, a kind of EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function is provided, its compact conformation has overvoltage, under-voltage and overcurrent protection, and is safe and reliable.
According to technical scheme provided by the invention, said EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function comprises and draws drive circuit and the drop-down drive circuit of NMOS on the PMOS; Draw drive circuit to comprise a P type metal-oxide-semiconductor on the said PMOS; After linking to each other with the gate terminal of a N type high-voltage MOS pipe, the gate terminal of a said P type metal-oxide-semiconductor forms link PG1; The back of the body grid end of the one P type metal-oxide-semiconductor links to each other with source terminal, and the source terminal of a P type metal-oxide-semiconductor interconnects with the 2nd P type metal-oxide-semiconductor, the 6th P type high-voltage MOS pipe, the 6th P type metal-oxide-semiconductor and corresponding back of the body grid end and the source terminal of the 7th P type metal-oxide-semiconductor respectively; Link to each other through the 7th resistance between the drain electrode end of the one P type metal-oxide-semiconductor and source terminal, and the drain electrode end of a P type metal-oxide-semiconductor links to each other with the drain electrode end of a P type high-voltage MOS pipe; The back of the body grid end of first high-voltage P-type MOS transistor, source terminal all link to each other with the drain electrode end of a N type high pressure NMOS pipe, and the source terminal of a P type high-voltage MOS pipe links to each other with the drain electrode end of the 4th P type high-voltage MOS pipe, the gate terminal of the 8th P type high-voltage MOS pipe through second resistance; The gate terminal of the one P type high-voltage MOS pipe links to each other with the gate terminal of the 2nd P type high-voltage MOS pipe, the gate terminal of the 9th P type high-voltage MOS pipe and the gate terminal of the tenth P type high-voltage MOS pipe, and the gate terminal of a P type high-voltage MOS pipe links to each other with the drain electrode end of the 3rd P type high-voltage MOS pipe through the 3rd resistance;
The source terminal of the one N type high-voltage MOS pipe links to each other with back of the body grid end; And interconnect with the 2nd N type high-voltage MOS pipe, the 3rd N type high-voltage MOS pipe, a N type metal-oxide-semiconductor, the 4th N type high-voltage MOS pipe and corresponding back of the body grid end and the source terminal of the 5th N type high-voltage MOS pipe respectively, and the source terminal of a N type high-voltage MOS pipe links to each other with the source terminal and the back of the body grid end of the tenth P type high-voltage MOS pipe through the 8th resistance;
After linking to each other with the gate terminal of the 2nd N type high-voltage MOS pipe, the gate terminal of the 2nd P type metal-oxide-semiconductor forms link PG2; The drain electrode end of the 2nd N type high-voltage MOS pipe links to each other with source terminal, the back of the body grid end of the 2nd P type high-voltage MOS pipe; The drain electrode end of the 2nd P type high-voltage MOS pipe links to each other with the drain electrode end of the 2nd P type metal-oxide-semiconductor, links to each other through the 6th resistance between the drain electrode end of the 2nd P type metal-oxide-semiconductor and source terminal; The source terminal of the drain electrode end of the 2nd N type high-voltage MOS pipe and the 2nd P type high-voltage MOS pipe all links to each other with the drain electrode end of the 5th P type high-voltage MOS pipe, the gate terminal of the 7th P type high-voltage MOS pipe through first resistance;
The gate terminal of source terminal, back of the body grid end and the 11 P type high-voltage MOS pipe of the drain electrode end of the gate terminal of the gate terminal of the 5th P type high-voltage MOS pipe and the 3rd P type high-voltage MOS pipe, the gate terminal of the 4th P type high-voltage MOS pipe, the 5th N type high-voltage MOS pipe, the gate terminal of the 8th P type metal-oxide-semiconductor, drain electrode end, the tenth P type high-voltage MOS pipe links to each other; The back of the body grid end of the 5th P type high-voltage MOS pipe, source terminal interconnect the back with the 3rd P type high-voltage MOS pipe, the 4th P type high-voltage MOS pipe, the 6th P type high-voltage MOS pipe, the 7th P type high-voltage MOS pipe and corresponding back of the body grid end, the source terminal of the 8th P type high-voltage MOS pipe and form link F_NW;
The 3rd P type high-voltage MOS pipe links to each other corresponding to the gate terminal of the drain electrode end that links to each other with the 3rd resistance with the 6th P type high-voltage MOS pipe; The drain electrode end of the 6th P type high-voltage MOS pipe links to each other with the anode tap of first parasitic diode, and the cathode terminal of first parasitic diode links to each other with the back of the body grid end of the 6th P type high-voltage MOS pipe; The drain electrode end of the 7th P type high-voltage MOS pipe links to each other with the anode tap of second parasitic diode, and the cathode terminal of second parasitic diode links to each other with the back of the body grid end of the 7th P type high-voltage MOS pipe; The drain electrode end of the 8th P type high-voltage MOS pipe links to each other with the anode tap of trixenie diode, and the cathode terminal of trixenie diode links to each other with the back of the body grid end of the 8th P type high-voltage MOS pipe; The corresponding connection with the source terminal of the 11 P type high-voltage MOS pipe of the drain electrode end of the drain electrode end of the 7th P type high-voltage MOS pipe, the 8th P type high-voltage MOS pipe back forms output OUT;
The gate terminal of the 6th P type metal-oxide-semiconductor is connected the back and forms power end V_VDD with the gate terminal of the 3rd N type high-voltage MOS pipe; The gate terminal of the gate terminal of the 6th P type metal-oxide-semiconductor, the 3rd N type high-voltage MOS pipe all links to each other with the gate terminal of a N type metal-oxide-semiconductor; The drain electrode end of the 6th P type metal-oxide-semiconductor links to each other with the drain electrode end of the 9th P type high-voltage MOS pipe, and the back of the body grid end of the 9th P type high-voltage MOS pipe, the corresponding back that connects of source terminal link to each other with the gate terminal of the 9th P type high-voltage MOS pipe, the drain electrode end of the 3rd N type high-voltage MOS pipe; The drain electrode end of the 6th P type metal-oxide-semiconductor, source terminal link to each other through the 5th resistance;
After linking to each other with the drain electrode end of the 4th N type high-voltage MOS pipe, the drain electrode end of the one N type metal-oxide-semiconductor forms biasing link V_BP; The drain electrode end of the 4th N type high-voltage MOS pipe links to each other with the gate terminal of the 4th N type high-voltage MOS pipe, the gate terminal of the 5th N type high-voltage MOS pipe; The drain electrode end of the 7th P type metal-oxide-semiconductor links to each other with the drain electrode end of the tenth P type high-voltage MOS pipe, and the drain electrode end of the 7th P type metal-oxide-semiconductor links to each other with the 7th P type metal-oxide-semiconductor source terminal, back of the body grid end through the 4th resistance; The gate terminal of the 7th P type metal-oxide-semiconductor forms power end V_VDD-;
The back of the body grid end of the back of the body grid end of the back of the body grid end of the 8th P type metal-oxide-semiconductor, the 9th P type metal-oxide-semiconductor, the back of the body grid end of the tenth P type metal-oxide-semiconductor and the 11 P type metal-oxide-semiconductor interconnects; And the drain electrode end of the 11 P type metal-oxide-semiconductor links to each other with the source terminal of the tenth P type metal-oxide-semiconductor, and the back of the body grid end of the source terminal of the drain electrode end of the 11 P type metal-oxide-semiconductor, the tenth P type metal-oxide-semiconductor and the 8th P type metal-oxide-semiconductor, the back of the body grid end of the 9th P type metal-oxide-semiconductor, the back of the body grid end of the tenth P type metal-oxide-semiconductor and the back of the body grid end of the 11 P type metal-oxide-semiconductor interconnect;
The drop-down drive circuit of said NMOS comprises the 13 P type high-voltage MOS pipe, and the corresponding connection with the gate terminal of the 3rd N type metal-oxide-semiconductor of the gate terminal of said the 13 P type high-voltage MOS pipe back forms link NG1; The source terminal of the 13 P type high-voltage MOS pipe, back of the body grid end interconnect with the 14 P type high-voltage MOS pipe, the 11 P type high-voltage MOS pipe, the 3rd P type metal-oxide-semiconductor, the 17 P type high-voltage MOS pipe, source terminal, back of the body grid end that the 18 P type high-voltage MOS pipe is corresponding respectively, and source terminal through the 11 resistance and the 8th N type high-voltage MOS pipe of the source terminal of the 13 P type high-pressure MOS, back of the body grid end, carry on the back the grid end and interconnect;
The source terminal of the drain electrode end of the 13 P type high-voltage MOS pipe and the drain electrode end of the 15 P type high-voltage MOS pipe, the 6th N type high-voltage MOS pipe, back of the body grid end interconnect, and the drain electrode end of the 13 P type high-voltage MOS pipe links to each other with the drain electrode end of the tenth N type high-voltage MOS pipe, the gate terminal of the 13 N type high-voltage MOS pipe through the 9th resistance; The drain electrode end of the gate terminal of the 15 P type high-voltage MOS pipe, back of the body grid end, source terminal and the 6th N type high-voltage MOS pipe all links to each other with the drain electrode end of the 3rd N type metal-oxide-semiconductor; The back of the body grid end of the 3rd N type metal-oxide-semiconductor, source terminal and the 4th N type metal-oxide-semiconductor, the 2nd N type metal-oxide-semiconductor, back of the body grid end, source terminal that the 4th N type metal-oxide-semiconductor is corresponding interconnect, and the back of the body grid end of the 3rd N type metal-oxide-semiconductor, source terminal all link to each other with the drain electrode end of the 15 N type high-voltage MOS pipe;
The gate terminal of the 6th N type high-voltage MOS pipe links to each other with gate terminal, the 15 N type high-voltage MOS pipe, the drain electrode end of the 12 N type high-voltage MOS pipe, the drain electrode end of the 11 P type high-voltage MOS pipe and the drain electrode end of the 19 P type high-voltage MOS pipe of the 7th N type high-voltage MOS pipe;
The corresponding connection with the gate terminal of the 4th N type metal-oxide-semiconductor of the 14 P type high-voltage MOS pipe back forms link NG2; The drain electrode end of the 14 P type high-voltage MOS pipe links to each other with gate terminal with the source terminal of the drain electrode end of the 16 P type high-voltage MOS pipe, the 7th N type high-voltage MOS pipe, and the drain electrode end of the 14 P type high-voltage MOS pipe links to each other with the drain electrode end of the 11 N type high-voltage MOS pipe, the gate terminal of the 14 N type high-voltage MOS pipe through the tenth resistance; The drain electrode end of the gate terminal of the 16 P type high-voltage MOS pipe, source terminal, back of the body grid end and the 7th N type high-voltage MOS pipe all links to each other with the drain electrode end of the 4th N type metal-oxide-semiconductor;
The gate terminal of the tenth N type high-voltage MOS pipe links to each other with the gate terminal of the 11 N type high-voltage MOS pipe, the gate terminal of the 12 N type high-voltage MOS pipe; The back of the body grid end of the tenth N type high-voltage MOS pipe, source terminal and the 11 N type high-voltage MOS pipe, back of the body grid end, source terminal that the 12 N type high-voltage MOS pipe is corresponding interconnect; The gate terminal of the 11 N type high-voltage MOS pipe also links to each other with drain electrode end, the source terminal of the 8th N type high-voltage MOS pipe, the back of the body grid end of the 18 P type high-voltage MOS pipe; Back of the body grid end, source terminal that the 13 N type high-voltage MOS pipe, the 14 N type high-voltage MOS pipe and the 15 N type high-voltage MOS pipe are corresponding interconnect, and the corresponding back of the body grid end of the 13 N type high-voltage MOS pipe, the 14 N type high-voltage MOS pipe and the 15 N type high-voltage MOS pipe, source terminal and the tenth N type high-voltage MOS pipe, the 11 N type high-voltage MOS pipe, back of the body grid end, source terminal that the 12 N type high-voltage MOS pipe is corresponding interconnect; The source terminal of the 15 N type high-voltage MOS pipe links to each other with the anode tap of the 4th parasitic diode; The cathode terminal of the 4th parasitic diode links to each other with the drain electrode end of the 15 N type high-voltage MOS pipe, the source terminal of the 14 N type high-voltage MOS pipe, back of the body grid end link to each other with the anode tap of the 5th parasitic diode; The cathode terminal of the 5th parasitic diode links to each other with the drain electrode end of the 14 N type high-voltage MOS pipe; Back of the body grid end, the source terminal of the 13 N type high-voltage MOS pipe link to each other with the anode tap of the 6th parasitic diode, and the cathode terminal of the 6th parasitic diode links to each other with the drain electrode end of the 13 N type high-voltage MOS pipe; The corresponding back that connects of the drain electrode end of the 13 N type high-voltage MOS pipe, the 14 N type high-voltage MOS pipe links to each other with output OUT;
The drain electrode end of the 11 P type high-voltage MOS pipe links to each other with the drain electrode end of the 19 P type high-voltage MOS pipe; The corresponding connection with the gate terminal of the 2nd N type metal-oxide-semiconductor of the gate terminal of the 11 P type high-voltage MOS pipe back forms link V_GND, and the gate terminal of the 11 P type high-voltage MOS pipe also links to each other with the gate terminal of the 3rd P type metal-oxide-semiconductor; The gate terminal of the 19 P type high-voltage MOS pipe, source terminal, back of the body grid end all link to each other with the drain electrode end of the 2nd N type metal-oxide-semiconductor; The drain electrode end of the 19 P type high-voltage MOS pipe links to each other with the gate terminal of the 8th N type high-voltage MOS pipe; The drain electrode end of the 3rd P type metal-oxide-semiconductor and drain electrode end, the gate terminal of the 17 P type high-voltage MOS pipe interconnect the back and form link V_BN; The gate terminal of the 17 P type high-voltage MOS pipe links to each other with the gate terminal of the 18 P type high-voltage MOS pipe;
The drain electrode end of the 8th N type high-voltage MOS pipe links to each other with the drain electrode end of the 4th N type metal-oxide-semiconductor, and the gate terminal of the 4th N type metal-oxide-semiconductor forms link V_GND-; The three the 11 resistance correspondences link to each other with the gate terminal of the 5th N type metal-oxide-semiconductor, the drain electrode end of the 5th N type metal-oxide-semiconductor, the gate terminal of the 9th N type high-voltage MOS pipe with the back of the body grid end of the 8th N type high-voltage MOS pipe, the end that source terminal links to each other; The source terminal of the 5th N type metal-oxide-semiconductor links to each other with gate terminal, the drain electrode end of the 6th N type metal-oxide-semiconductor, and the source terminal of the 6th N type metal-oxide-semiconductor links to each other with gate terminal, the drain electrode end of the 7th N type metal-oxide-semiconductor; The source terminal of the 7th N type metal-oxide-semiconductor links to each other with the drain electrode end of the 9th N type high-voltage MOS pipe; The back of the body grid end of the back of the body grid end of the back of the body grid end of the 5th N type metal-oxide-semiconductor, the 6th N type metal-oxide-semiconductor, the back of the body grid end of the 7th N type metal-oxide-semiconductor and the 9th N type high-voltage MOS pipe interconnects, and the drain electrode end of the source terminal of the 7th N type metal-oxide-semiconductor, the 9th P type high-voltage MOS pipe all links to each other with the back of the body grid end of the 9th N type high-voltage MOS pipe; The source terminal of the 9th N type high-voltage MOS pipe links to each other with output OUT through the 12 resistance.
The source terminal that a said P type metal-oxide-semiconductor, the 2nd P type metal-oxide-semiconductor, the 6th P type metal-oxide-semiconductor, the 7th P type metal-oxide-semiconductor, the 13 P type high-voltage MOS pipe, the 14 P type high-voltage MOS pipe, the 11 P type metal-oxide-semiconductor, the 3rd P type metal-oxide-semiconductor, the 17 P type high-voltage MOS pipe and the 18 P type high-voltage MOS pipe are corresponding, back of the body grid end all link to each other with external power source VDD, and the drain electrode end of the 6th P type high-voltage MOS pipe, the anode tap of first parasitic diode all link to each other with external power source VDD; The source terminal of the 8th N type high-voltage MOS pipe, back of the body grid end link to each other with external power source VDD through the 11 resistance;
The source terminal that the one N type high-voltage MOS pipe, the 2nd N type high-voltage MOS pipe, the 3rd N type high-voltage MOS pipe, a N type metal-oxide-semiconductor, the 4th N type high-voltage MOS pipe, the 5th N type high-voltage MOS pipe, the 3rd N type metal-oxide-semiconductor, the 4th N type metal-oxide-semiconductor, the 2nd N type metal-oxide-semiconductor and the 4th N type metal-oxide-semiconductor are corresponding, back of the body grid end all link to each other with outside GND; The source terminal of the tenth P type high-voltage MOS pipe, back of the body grid end link to each other with outside GND through the 8th resistance, and the cathode terminal of the 15 N type high-voltage MOS pipe and the 4th parasitic diode all links to each other with outside GND.
A said N type high-voltage MOS pipe, the 2nd N type high-voltage MOS pipe, the 3rd N type high-voltage MOS pipe, the 4th N type high-voltage MOS pipe, the 5th N type high-voltage MOS pipe, the 6th N type high-voltage MOS pipe, the 7th N type high-voltage MOS pipe and the 8th N type high-voltage MOS pipe adopt the drain terminal isolated tube, and corresponding isolation well all is connected to external power source VDD.
Said the 9th N type high-voltage MOS pipe, the tenth N type high-voltage MOS pipe, the 11 N type high-voltage MOS pipe, the 12 N type high-voltage MOS pipe, the 13 N type high-voltage MOS pipe, the 14 N type high-voltage MOS pipe, the 15 N type high-voltage MOS pipe, the 5th N type metal-oxide-semiconductor, the 6th N type metal-oxide-semiconductor and the 7th N type metal-oxide-semiconductor all adopt the drain terminal isolated tube, and its corresponding isolation well interconnects and receive node F_NW.
Said the 5th N type metal-oxide-semiconductor, the 6th N type metal-oxide-semiconductor, the 7th N type metal-oxide-semiconductor and the 9th N type high-voltage MOS pipe adopt the drain terminal isolated tube, and all are distributed in the same isolation well.
Said the tenth N type high-voltage MOS pipe, the 11 N type high-voltage MOS pipe, the 12 N type high-voltage MOS pipe, the 13 N type high-voltage MOS pipe, the 14 N type high-voltage MOS pipe and the 15 N type high-voltage MOS pipe all adopt the drain terminal isolated tube, and all are arranged in the N type isolation well.
Advantage of the present invention: EBI output stage drive circuit input links to each other with the drive circuit control module, and output links to each other with EBI; Link V_BP links to each other with bias source respectively with link V_BN.EBI output stage drive circuit comprises and draws drive circuit and the drop-down drive circuit of NMOS on the PMOS; Draw drive circuit, the drop-down drive circuit of NMOS to carry out corresponding matching on the PMOS in the EBI output stage drive circuit according to the control signal of drive circuit control module input and the voltage of EBI; Can effectively protect overvoltage, under-voltage and overcurrent condition, improve the reliability of output stage drive circuit.
Description of drawings
Fig. 1 is the block diagram of existing bus driving circuits.
Fig. 2 is the block diagram of bus driving circuits of the present invention.
Fig. 3 is a structure principle chart of the present invention.
Embodiment
Below in conjunction with concrete accompanying drawing and embodiment the present invention is described further.
As shown in Figure 3: said EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function comprises and draws drive circuit and the drop-down drive circuit of NMOS on the PMOS; Draw drive circuit to comprise a P type metal-oxide-semiconductor PM1 on the said PMOS; After linking to each other with the gate terminal of a N type high-voltage MOS pipe HNM1, the gate terminal of a said P type metal-oxide-semiconductor forms link PG1; The back of the body grid end of the one P type metal-oxide-semiconductor PM1 links to each other with source terminal, and the source terminal of a P type metal-oxide-semiconductor PM1 interconnects with the 2nd P type metal-oxide-semiconductor PM2, the 6th P type high-voltage MOS pipe HPM6, the 6th P type metal-oxide-semiconductor PM6 and corresponding back of the body grid end and the source terminal of the 7th P type metal-oxide-semiconductor PM7 respectively; Link to each other through the 7th resistance R 7 between the drain electrode end of the one P type metal-oxide-semiconductor PM1 and source terminal, and the drain electrode end of a P type metal-oxide-semiconductor PM1 links to each other with the drain electrode end of a P type high-voltage MOS pipe HPM1; The back of the body grid end of the first high-voltage P-type MOS transistor HPM1, source terminal all link to each other with the drain electrode end of a N type high pressure NMOS pipe HNM1, and the source terminal of a P type high-voltage MOS pipe HPM1 links to each other with the drain electrode end of the 4th P type high-voltage MOS pipe HPM4, the gate terminal of the 8th P type high-voltage MOS pipe HPM8 through second resistance R 2; The gate terminal of the one P type high-voltage MOS pipe HPM1 links to each other with the gate terminal of the 2nd P type high-voltage MOS pipe HPM2, the gate terminal of the 9th P type high-voltage MOS pipe HPM9 and the gate terminal of the tenth P type high-voltage MOS pipe HPM10, and the gate terminal of a P type high-voltage MOS pipe HPM1 links to each other with the drain electrode end of the 3rd P type high-voltage MOS pipe HPM3 through the 3rd resistance R 3;
The source terminal of the one N type high-voltage MOS pipe HNM1 links to each other with back of the body grid end; And interconnect with the 2nd N type high-voltage MOS pipe HNM2, the 3rd N type high-voltage MOS pipe HNM3, a N type metal-oxide-semiconductor NM1, the 4th N type high-voltage MOS pipe HNM4 and corresponding back of the body grid end and the source terminal of the 5th N type high-voltage MOS pipe HNM5 respectively, and the source terminal of a N type high-voltage MOS pipe HNM1 links to each other with source terminal and the back of the body grid end of the tenth P type high-voltage MOS pipe HPM10 through the 8th resistance R 8;
After linking to each other with the gate terminal of the 2nd N type high-voltage MOS pipe HNM2, the gate terminal of the 2nd P type metal-oxide-semiconductor PM2 forms link PG2; The drain electrode end of the 2nd N type high-voltage MOS pipe HNM2 links to each other with source terminal, the back of the body grid end of the 2nd P type high-voltage MOS pipe HPM2; The drain electrode end of the 2nd P type high-voltage MOS pipe HPM2 links to each other with the drain electrode end of the 2nd P type metal-oxide-semiconductor PM2, links to each other through the 6th resistance R 6 between the drain electrode end of the 2nd P type metal-oxide-semiconductor PM2 and source terminal; The source terminal of the drain electrode end of the 2nd N type high-voltage MOS pipe HNM2 and the 2nd P type high-voltage MOS pipe HPM2 all links to each other with the drain electrode end of the 5th P type high-voltage MOS pipe HPM5, the gate terminal of the 7th P type high-voltage MOS pipe HPM7 through first resistance R 1;
The gate terminal of source terminal, back of the body grid end and the 11 P type high-voltage MOS pipe HPM11 of the drain electrode end of the gate terminal of the gate terminal of the 5th P type high-voltage MOS pipe HPM5 and the 3rd P type high-voltage MOS pipe HPM3, the gate terminal of the 4th P type high-voltage MOS pipe HPM4, the 5th N type high-voltage MOS pipe HNM5, the gate terminal of the 8th P type metal-oxide-semiconductor PM8, drain electrode end, the tenth P type high-voltage MOS pipe HPM10 links to each other; The back of the body grid end of the 5th P type high-voltage MOS pipe HPM5, source terminal interconnect the back with the 3rd P type high-voltage MOS pipe HPM3, the 4th P type high-voltage MOS pipe HPM4, the 6th P type high-voltage MOS pipe HPM6, the 7th P type high-voltage MOS pipe HPM7 and corresponding back of the body grid end, the source terminal of the 8th P type high-voltage MOS pipe HPM8 and form link F_NW; After linking to each other with the source terminal of the tenth P type high-voltage MOS pipe HPM10, the gate terminal of the 8th P type metal-oxide-semiconductor PM8 forms node PS_C.
The 3rd P type high-voltage MOS pipe HPM3 links to each other corresponding to the gate terminal of the drain electrode end that links to each other with the 3rd resistance R 3 with the 6th P type high-voltage MOS pipe HPM6; The drain electrode end of the 6th P type high-voltage MOS pipe HPM6 links to each other with the anode tap of the first parasitic diode D1, and the cathode terminal of the first parasitic diode D1 links to each other with the back of the body grid end of the 6th P type high-voltage MOS pipe HPM6; The drain electrode end of the 7th P type high-voltage MOS pipe HPM7 links to each other with the anode tap of the second parasitic diode D2, and the cathode terminal of the second parasitic diode D2 links to each other with the back of the body grid end of the 7th P type high-voltage MOS pipe HPM7; The drain electrode end of the 8th P type high-voltage MOS pipe HPM8 links to each other with the anode tap of trixenie diode D3, and the cathode terminal of trixenie diode D3 links to each other with the back of the body grid end of the 8th P type high-voltage MOS pipe HPM8; The corresponding connection with the source terminal of the 11 P type high-voltage MOS pipe HPM11 of the drain electrode end of the drain electrode end of the 7th P type high-voltage MOS pipe HPM7, the 8th P type high-voltage MOS pipe HPM8 back forms output OUT;
The gate terminal of the 6th P type metal-oxide-semiconductor PM6 is connected the back and forms power end V_VDD with the gate terminal of the 3rd N type high-voltage MOS pipe HNM3; The gate terminal of the gate terminal of the 6th P type metal-oxide-semiconductor PM6, the 3rd N type high-voltage MOS pipe HNM3 all links to each other with the gate terminal of a N type metal-oxide-semiconductor NM1; The drain electrode end of the 6th P type metal-oxide-semiconductor PM6 links to each other with the drain electrode end of the 9th P type high-voltage MOS pipe HPM9, and the back of the body grid end of the 9th P type high-voltage MOS pipe HPM9, the corresponding back that connects of source terminal link to each other with the gate terminal of the 9th P type high-voltage MOS pipe HPM9, the drain electrode end of the 3rd N type high-voltage MOS pipe HNM3; The drain electrode end of the 6th P type metal-oxide-semiconductor PM6, source terminal link to each other through the 5th resistance R 5;
After linking to each other with the drain electrode end of the 4th N type high-voltage MOS pipe HNM4, the drain electrode end of the one N type metal-oxide-semiconductor NM1 forms biasing link V_BP; The drain electrode end of the 4th N type high-voltage MOS pipe HNM4 links to each other with the gate terminal of the 4th N type high-voltage MOS pipe HNM4, the gate terminal of the 5th N type high-voltage MOS pipe HNM5; The drain electrode end of the 7th P type metal-oxide-semiconductor PM7 links to each other with the drain electrode end of the tenth P type high-voltage MOS pipe HPM10, and the drain electrode end of the 7th P type metal-oxide-semiconductor PM7 links to each other with source terminal, the back of the body grid end of the 7th P type metal-oxide-semiconductor PM7 through the 4th resistance R 4; The gate terminal of the 7th P type metal-oxide-semiconductor PM7 forms power end V_VDD-;
The back of the body grid end of the back of the body grid end of the back of the body grid end of the 8th P type metal-oxide-semiconductor PM8, the 9th P type metal-oxide-semiconductor PM9, the tenth P type metal-oxide-semiconductor PM10 and the back of the body grid end of the 11 P type metal-oxide-semiconductor HPM11 interconnect; And the drain electrode end of the 11 P type metal-oxide-semiconductor HPM11 links to each other with the source terminal of the tenth P type metal-oxide-semiconductor PM10, and the back of the body grid end of the source terminal of the drain electrode end of the 11 P type metal-oxide-semiconductor HPM11, the tenth P type metal-oxide-semiconductor PM10 and the back of the body grid end of the 8th P type metal-oxide-semiconductor PM8, the 9th P type metal-oxide-semiconductor PM9, the back of the body grid end of the tenth P type metal-oxide-semiconductor PM10 and the back of the body grid end of the 11 P type metal-oxide-semiconductor HPM11 interconnect;
The drop-down drive circuit of said NMOS comprises the 13 P type high-voltage MOS pipe HPM13, and the corresponding connection with the gate terminal of the 3rd N type metal-oxide-semiconductor NM3 of the gate terminal of said the 13 P type high-voltage MOS pipe HPM13 back forms link NG1; The source terminal of the 13 P type high-voltage MOS pipe HPM13, back of the body grid end interconnect with the 14 P type high-voltage MOS pipe HPM14, the 11 P type high-voltage MOS pipe HPM11, the 3rd P type metal-oxide-semiconductor PM3, the 17 P type high-voltage MOS pipe HPM17, source terminal, back of the body grid end that the 18 P type high-voltage MOS pipe HPM18 is corresponding respectively, and source terminal through the 11 resistance R 11 and the 8th N type high-voltage MOS pipe HNM8 of the source terminal of the 13 P type high-pressure MOS HPM13, back of the body grid end, carry on the back the grid end and interconnect;
The source terminal of the drain electrode end of the 13 P type high-voltage MOS pipe HPM13 and the drain electrode end of the 15 P type high-voltage MOS pipe HPM15, the 6th N type high-voltage MOS pipe HNM6, back of the body grid end interconnect, and the drain electrode end of the 13 P type high-voltage MOS pipe HPM13 links to each other with the drain electrode end of the tenth N type high-voltage MOS pipe HNM10, the gate terminal of the 13 N type high-voltage MOS pipe HNM13 through the 9th resistance R 9; The drain electrode end of the gate terminal of the 15 P type high-voltage MOS pipe HPM15, back of the body grid end, source terminal and the 6th N type high-voltage MOS pipe HNM6 all links to each other with the drain electrode end of the 3rd N type metal-oxide-semiconductor NM3; The back of the body grid end of the 3rd N type metal-oxide-semiconductor NM3, source terminal interconnect with the 4th N type metal-oxide-semiconductor NM4, the 2nd N type metal-oxide-semiconductor NM2, corresponding back of the body grid end, the source terminal of the 4th N type metal-oxide-semiconductor NM4, and the back of the body grid end of the 3rd N type metal-oxide-semiconductor NM3, source terminal all link to each other with the drain electrode end of the 15 N type high-voltage MOS pipe HNM15;
The gate terminal of the 6th N type high-voltage MOS pipe HNM6 links to each other with gate terminal, the 15 N type high-voltage MOS pipe HNM15, the drain electrode end of the 12 N type high-voltage MOS pipe HNM12, the drain electrode end of the 11 P type high-voltage MOS pipe HPM11 and the drain electrode end of the 19 P type high-voltage MOS pipe HPM19 of the 7th N type high-voltage MOS pipe HNM7;
The corresponding connection with the gate terminal of the 4th N type metal-oxide-semiconductor NM4 of the 14 P type high-voltage MOS pipe HPM14 back forms link NG2; The drain electrode end of the 14 P type high-voltage MOS pipe HPM14 links to each other with gate terminal with the source terminal of the drain electrode end of the 16 P type high-voltage MOS pipe HPM16, the 7th N type high-voltage MOS pipe HNM7, and the drain electrode end of the 14 P type high-voltage MOS pipe HPM14 links to each other with the drain electrode end of the 11 N type high-voltage MOS pipe HNM11, the gate terminal of the 14 N type high-voltage MOS pipe HNM14 through the tenth resistance R 10; The drain electrode end of the gate terminal of the 16 P type high-voltage MOS pipe HPM16, source terminal, back of the body grid end and the 7th N type high-voltage MOS pipe HNM7 all links to each other with the drain electrode end of the 4th N type metal-oxide-semiconductor NM4;
The gate terminal of the tenth N type high-voltage MOS pipe HNM10 links to each other with the gate terminal of the 11 N type high-voltage MOS pipe HNM11, the gate terminal of the 12 N type high-voltage MOS pipe HNM12; The back of the body grid end of the tenth N type high-voltage MOS pipe HNM10, source terminal interconnect with the 11 N type high-voltage MOS pipe HNM11, corresponding back of the body grid end, the source terminal of the 12 N type high-voltage MOS pipe HNM12; The gate terminal of the 11 N type high-voltage MOS pipe HNM11 also links to each other with drain electrode end, the source terminal of the 8th N type high-voltage MOS pipe HNM8, the back of the body grid end of the 18 P type high-voltage MOS pipe HPM18, and corresponding back of the body grid end, the source terminal of the 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14 and the 15 N type high-voltage MOS pipe HNM15 interconnects with the tenth N type high-voltage MOS pipe HNM10, the 11 N type high-voltage MOS pipe HNM11, corresponding back of the body grid end, the source terminal of the 12 N type high-voltage MOS pipe HNM12; Back of the body grid end, source terminal that the 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14 and the 15 N type high-voltage MOS pipe HNM15 are corresponding interconnect; The source terminal of the 15 N type high-voltage MOS pipe HNM15 links to each other with the anode tap of the 4th parasitic diode D4; The cathode terminal of the 4th parasitic diode D4 links to each other with the drain electrode end of the 15 N type high-voltage MOS pipe HNM15, the source terminal of the 14 N type high-voltage MOS pipe HNM14, back of the body grid end link to each other with the anode tap of the 5th parasitic diode D5; The cathode terminal of the 5th parasitic diode D5 links to each other with the drain electrode end of the 14 N type high-voltage MOS pipe HNM14; Back of the body grid end, the source terminal of the 13 N type high-voltage MOS pipe HNM13 link to each other with the anode tap of the 6th parasitic diode D6, and the cathode terminal of the 6th parasitic diode D6 links to each other with the drain electrode end of the 13 N type high-voltage MOS pipe HNM13; The corresponding back that connects of the drain electrode end of the 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14 links to each other with output OUT;
The drain electrode end of the 11 P type high-voltage MOS pipe HPM11 links to each other with the drain electrode end of the 19 P type high-voltage MOS pipe HPM19; The corresponding connection with the gate terminal of the 2nd N type metal-oxide-semiconductor NM2 of the gate terminal of the 11 P type high-voltage MOS pipe HPM11 back forms link V_GND, and the gate terminal of the 11 P type high-voltage MOS pipe HPM11 also links to each other with the gate terminal of the 3rd P type metal-oxide-semiconductor PM3; The gate terminal of the 19 P type high-voltage MOS pipe HPM19, source terminal, back of the body grid end all link to each other with the drain electrode end of the 2nd N type metal-oxide-semiconductor NM2; The drain electrode end of the 19 P type high-voltage MOS pipe HPM19 links to each other with the gate terminal of the 8th N type high-voltage MOS pipe HNM8; The drain electrode end of the 3rd P type metal-oxide-semiconductor PM3 and drain electrode end, the gate terminal of the 17 P type high-voltage MOS pipe HPM17 interconnect the back and form link V_BN; The gate terminal of the 17 P type high-voltage MOS pipe HPM17 links to each other with the gate terminal of the 18 P type high-voltage MOS pipe HPM18;
The drain electrode end of the 8th N type high-voltage MOS pipe HNM8 links to each other with the drain electrode end of the 4th N type metal-oxide-semiconductor NM4, and the gate terminal of the 4th N type metal-oxide-semiconductor NM4 forms link V_GND-; The three the 11 resistance R 11 correspondences link to each other with the gate terminal of the 5th N type metal-oxide-semiconductor NM5, the drain electrode end of the 5th N type metal-oxide-semiconductor NM5, the gate terminal of the 9th N type high-voltage MOS pipe HNM9 with the back of the body grid end of the 8th N type high-voltage MOS pipe HNM8, the end that source terminal links to each other; The source terminal of the 5th N type metal-oxide-semiconductor NM5 links to each other with gate terminal, the drain electrode end of the 6th N type metal-oxide-semiconductor NM6, and the source terminal of the 6th N type metal-oxide-semiconductor NM6 links to each other with gate terminal, the drain electrode end of the 7th N type metal-oxide-semiconductor NM7; The source terminal of the 7th N type metal-oxide-semiconductor NM7 links to each other with the drain electrode end of the 9th N type high-voltage MOS pipe HNM9; The back of the body grid end of the back of the body grid end of the back of the body grid end of the back of the body grid end of the 5th N type metal-oxide-semiconductor NM5, the 6th N type metal-oxide-semiconductor NM6, the 7th N type metal-oxide-semiconductor NM7 and the 9th N type high-voltage MOS pipe HNM9 interconnects, and the drain electrode end of the source terminal of the 7th N type metal-oxide-semiconductor NM7, the 9th P type high-voltage MOS pipe HNM9 all links to each other with the back of the body grid end of the 9th N type high-voltage MOS pipe HNM9; The source terminal of the 9th N type high-voltage MOS pipe HNM9 links to each other with output OUT through the 12 resistance R 12.After linking to each other with the source terminal of the 15 N type high-voltage MOS pipe HNM15, the 14 N type high-voltage MOS pipe HNM14, the source terminal of the 13 N type high-voltage MOS pipe HNM13 forms node F_PW; The 11 resistance R 11 forms node NS_C corresponding to the back that links to each other with source terminal, the back of the body grid end of the 8th N type high-voltage MOS pipe HNM8.
The source terminal that a said P type metal-oxide-semiconductor PM1, the 2nd P type metal-oxide-semiconductor PM2, the 6th P type metal-oxide-semiconductor PM6, the 7th P type metal-oxide-semiconductor PM7, the 13 P type high-voltage MOS pipe HPM13, the 14 P type high-voltage MOS pipe HPM14, the 11 P type metal-oxide-semiconductor HPM11, the 3rd P type metal-oxide-semiconductor PM3, the 17 P type high-voltage MOS pipe HPM17 and the 18 P type high-voltage MOS pipe HPM18 are corresponding, back of the body grid end all link to each other with external power source VDD, and the drain electrode end of the 6th P type high-voltage MOS pipe HPM6, the anode tap of the first parasitic diode D1 all link to each other with external power source VDD; The source terminal of the 8th N type high-voltage MOS pipe HNM8, back of the body grid end link to each other with external power source VDD through the 11 resistance R 11;
The source terminal that the one N type high-voltage MOS pipe HNM1, the 2nd N type high-voltage MOS pipe HNM2, the 3rd N type high-voltage MOS pipe HNM3, a N type metal-oxide-semiconductor NM1, the 4th N type high-voltage MOS pipe HNM4, the 5th N type high-voltage MOS pipe HNM5, the 3rd N type metal-oxide-semiconductor NM3, the 4th N type metal-oxide-semiconductor NM4, the 2nd N type metal-oxide-semiconductor NM2 and the 4th N type metal-oxide-semiconductor NM4 are corresponding, back of the body grid end all link to each other with outside GND; The source terminal of the tenth P type high-voltage MOS pipe HPM10, back of the body grid end link to each other with outside GND through the 8th resistance R 8, and the cathode terminal of the 15 N type high-voltage MOS pipe HNM15 and the 4th parasitic diode D1 all links to each other with outside GND.
The 6th N type high-voltage MOS pipe HNM6, the 7th N type high-voltage MOS pipe HNM7, the 8th N type high-voltage MOS pipe HNM8, the 9th N type high-voltage MOS pipe HNM9, the tenth N type high-voltage MOS pipe HNM10, the 11 N type high-voltage MOS pipe HNM11, the 12 N type high-voltage MOS pipe HNM12, the 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14 and the 15 N type high-voltage MOS pipe HNM15 all adopt the drain terminal isolated tube in the drop-down drive circuit of said NMOS, and all are arranged in the N type isolation well.
Said the 5th N type metal-oxide-semiconductor NM5, the 6th N type metal-oxide-semiconductor NM6 and the 7th N type metal-oxide-semiconductor NM7 all adopt the drain terminal isolated tube.
Said the 6th N type high-voltage MOS pipe HNM6; The 7th N type high-voltage MOS pipe HNM7; The 8th N type high-voltage MOS pipe HNM8; The 9th N type high-voltage MOS pipe HNM9; The tenth N type high-voltage MOS pipe HNM10; The 11 N type high-voltage MOS pipe HNM11; The 12 N type high-voltage MOS pipe HNM12; The 13 N type high-voltage MOS pipe HNM13; Isolation well ISO and the 5th N type metal-oxide-semiconductor NM5 that the 14 N type high-voltage MOS pipe HNM14 and the 15 N type high-voltage MOS pipe HNM15 are corresponding; The isolation well ISO that the 6th N type metal-oxide-semiconductor NM6 and the 7th N type metal-oxide-semiconductor NM7 are corresponding interconnects the back and links to each other with link F_NW.The corresponding isolation well of other isolated tubes in the said EBI output stage drive circuit all is connected on the power supply potential.
As shown in Figure 2: as to be the structured flowchart of drive circuit control module with the corresponding cooperation of EBI output stage drive circuit.。The input DE of drive circuit control module is the driver enable signal; DI is the driver input control signal; VDD is an external power source; GND is ground; OUT is the level signal on the bus.The drive circuit control module can be come control bus output stage drive signal according to the value of 5 signals importing; When bus output stage drive signal can guarantee correctly to drive bus; Realize overvoltage, under-voltage and overcurrent protection, and guarantee under power supply power-fail and abnormal conditions, effectively to isolate with bus.Corresponding output pin among Fig. 2 is corresponding with the link among Fig. 3 to link to each other.The drive circuit control module of drive circuit control module and existing output stage drive circuit is consistent.The drive circuit control module mainly comprises under-voltage detection comparator and overvoltage detection comparator, whether is lower than ground level GND through under-voltage detection comparator testbus voltage, is used for the testbus level through the overvoltage detection comparator and whether is higher than power vd D; The drive circuit control module also comprises corresponding combinational logic circuit simultaneously; Through the DE driver enable signal of combinational logic circuit according to input, DI driver drives input signal and bus signals level decision output control signal are come control bus interface output stage drive circuit.
As shown in Figures 2 and 3:, divide 3 states to describe the operation principle of bus driver output-stage circuit according to the working condition of bus driving circuits.Particularly:
1), work as power supply electrifying, during DE=0, EBI output stage drive circuit turn-offs;
Table 1 power supply electrifying, during DE=0, drive circuit control module output state signal
A), when GND voltage less than output OUT voltage, output OUT voltage is during less than the voltage of external power source VDD,
GND voltage is less than output OUT voltage; Output OUT voltage is less than the voltage of external power source VDD; Link PG1 in the corresponding diagram 3, link PG2 are low level, and the 6th P type high-voltage MOS pipe HPM6, the 7th P type high-voltage MOS pipe HPM7 and the 8th P type high-voltage MOS pipe HPM8 all turn-off; Link NG1, link NG2 are high level, and the 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14 and the 15 N type high-voltage MOS pipe HNM15 all turn-off, and EBI output stage drive circuit is output as high-impedance state.
B), when output OUT voltage during greater than the voltage of external voltage VDD,
When OUT voltage greater than VDD is; Corresponding to drawing drive part on the PMOS: when the voltage difference between output OUT and the link F_NW during greater than the positive bias-voltage of the parasitic diode second parasitic diode D2 of the 7th P type high-voltage MOS pipe HPM7, the 8th P type high-voltage MOS pipe HPM8, trixenie diode D3; Link F_NW can follow output OUT and rise, the low parasitic diode forward voltage drop of specific output end OUT.Unidirectional turning circuit that the 11 P type high-voltage MOS pipe HPM11 and the tenth P type metal-oxide-semiconductor PM10, the 9th P type metal-oxide-semiconductor PM9 and the 8th P type metal-oxide-semiconductor PM8 form and the 5th N type high-voltage MOS pipe HNM5 form bleeder circuit; Guarantee the voltage difference between output OUT and PS_C point, promptly the grid potential difference of the 4th P type high-voltage MOS pipe HPM4 is at least 3 times VTH; Said 3 times VTH is because after the 11 P type high-voltage MOS pipe is equivalent to the switching tube conducting; Pressure drop between output OUT and the node PS_C, said pressure drop are at least the threshold voltage VTH sum of the 8th P type metal-oxide-semiconductor PM8, the 9th P type metal-oxide-semiconductor PM9 and the tenth P type metal-oxide-semiconductor PM10; Because at this moment bleeder circuit has electric current to flow through, therefore above-mentioned PM8, PM9 and the certain conducting of PM10,3 VGS (voltage difference between the grid source) are at least greater than 3 VTH.The gate terminal of such the 3rd P type high-voltage MOS pipe HPM3, the 4th P type high-voltage MOS pipe HPM4 and the 5th P type high-voltage MOS pipe HPM5 and the VTH that the source terminal voltage difference is at least 2 times; Therefore HPM3, HPM4 and HPM5 conducting; The 7th P type high-voltage MOS pipe HPM7, the 8th P type high-voltage MOS pipe HPM8 are identical with the F_NW current potential with the grid of the 6th P type high-voltage MOS pipe HPM6, and the 6th P type high-voltage MOS pipe HPM6 ends; The first parasitic diode D1, the second parasitic diode D2 and the trixenie diode D3 of parasitic diode do not have current path back-to-back simultaneously.There is not current path from output OUT to external power source VDD like this.Along with output OUT raises; The voltage of link F_NW raises, and the 6th P type high-voltage MOS pipe HPM6 is a high-voltage tube, and its VDS (voltage difference between the drain-source) is enough big, can guarantee requirement of withstand voltage.
C), when output OUT voltage during less than the voltage of GND,
When output OUT voltage during, corresponding to the drop-down drive part of NMOS: parasitic diode the 6th parasitic diode D6, the 5th parasitic diode D5 that existence the 13 N type high-voltage MOS pipe HNM13 between output OUT and the F_PW and the 14 N type high-voltage MOS pipe HNM14 are parasitic less than GND voltage.When output OUT voltage during less than GND voltage, the voltage that F_PW can follow OUT descends, and pressure reduction is the positive bias-voltage of a PN junction.The unidirectional turning circuit bleeder circuit of being made up of the 18 P type high-voltage MOS pipe HPM18, the 5th N type metal-oxide-semiconductor NM5, the 6th N type metal-oxide-semiconductor NM6, the 7th N type metal-oxide-semiconductor NM7, the 9th N type high-voltage MOS pipe HNM9 and the 12 resistance R 12 guarantees low 3 the VTH voltages of output OUT voltage ratio NS_C point.The VGS (gate source voltage is poor) of such the tenth N type high-voltage MOS pipe HNM10, the 11 N type high-voltage MOS pipe HNM11 and the 12 N type high-voltage MOS pipe HNM12 has about 2 times VTH voltage, and the tenth N type high-voltage MOS pipe HNM10, the 11 N type high-voltage MOS pipe HNM11 are identical with node F_PW voltage with the source voltage terminal of the 12 N type high-voltage MOS pipe HNM12; The conducting of above-mentioned three N type high-voltage MOS pipes; The 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14 are all identical with F_PW with the grid potential of the 15 N type high-voltage MOS pipe HNM15; The high positively biased PN junction current potential of specific output end OUT, the VGS of the 15 N type high-voltage MOS pipe HNM15 is a zero to cut-off.Because the 5th parasitic diode D5, the 6th parasitic diode D6 and the 4th parasitic diode D4 of parasitic diode are back-to-back, thereby also do not have parasitic current path.There is not current path from output OUT to GND like this.
2), power supply electrifying (voltage of VDD adds), the DE=1 drive circuit enables
Table 2 power supply electrifying, during DE=1, drive circuit control module output state signal
A), when GND voltage less than output OUT voltage, output OUT voltage is during less than the voltage of external power source VDD;
Under the normal condition, when GND voltage less than output OUT voltage during less than the voltage of external power source VDD, the voltage of link PG1, link PG2, link NG1, link NG2 and link DI equates.When link DI=0; Draw the 6th P type high-voltage MOS pipe HPM6, the 7th P type high-voltage MOS pipe HPM7 in the drive circuit to end on the 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14, the 15 N type high-voltage MOS pipe HNM15 conducting HPMOS in the drop-down drive circuit of NMOS, OUT pulls down to low level with output; When DI=1; The 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14 end in the drop-down drive circuit of NMOS; PMOS is last to draw the 6th P type high-voltage MOS pipe HPM6 to the eight P type high-voltage MOS pipe HPM8 conductings in the drive current, with moving high level on the output OUT.Work as DI=0; When output OUT pulls down to low level; If at this moment external bus is drawn high output OUT level, the electric current that then flows through the 13 N type high-voltage MOS pipe HNM13 to the 15 N type high-voltage MOS pipe HNM15 corresponding in the drop-down drive circuit of NMOS is increasing; In order to protect drop-down driving tube, improve reliability, when output OUT voltage is lifted to certain value; Link NG1 becomes high level, turn-offs the 13 N type high-voltage MOS pipe HNM13, has only HNM14 and HNM15 conducting; It is big that the driving tube equivalent resistance becomes, and the electric current that flows through driving tube HNM15 diminishes, (because HNM13 turn-offs; Connect with the conducting resistance of HNM15 after the conducting resistance parallel connection that original equivalent resistance is HNM13 and HNM14; The electric current that flows through HNM14 does not have change basically, flows through the HNM15 electric current and reduces), play overcurrent protection function.Work as DI=1, when moving high level on the output OUT, if at this moment external bus drags down output OUT level; The electric current that then flows through the 6th P type high-voltage MOS pipe HPM6 to the eight P type high-voltage MOS pipe HPM8 that draw on the PMOS in the drive circuit can be increasing, draws driving tube on protecting, and improves reliability; When output OUT voltage was reduced to certain value, link PG1 became low level, turn-offed the 8th P type high-voltage MOS pipe HPM8; Have only HPM7 and HPM6 conducting; It is big that the driving tube equivalent resistance becomes, and the electric current that flows through driving tube HPM6 diminishes, and plays overcurrent protection function.
B), when output OUT voltage during greater than the voltage of external power source VDD,
When output OUT voltage during greater than the voltage of external power source VDD, no matter DI is high level or low level, and PMOS is last to draw the 6th P type high-voltage MOS pipe HPM6 in the drive circuit to end, and at this moment when overvoltage protection principle and DE=0, OUT is identical greater than the situation of VDD.At this moment the state of the drop-down drive circuit of NMOS is determined by DI and output OUT jointly; If DI=1, then link NG1 and link NG2 are high level, and HNM13 and HNM14 end; If DI=0; Link NG1=1 then, link NG2=0, the 14 N type high-voltage MOS pipe HNM14 conducting in the drop-down drive circuit of NMOS; The 13 N type high-voltage MOS pipe HNM13 turn-offs; At this moment overcurrent protection function is played in HNM14 and HNM15 conducting in the drop-down drive circuit of NMOS, can be not excessive to the electric current of GND by output OUT.
C), when output OUT voltage during less than GND voltage
When output OUT voltage during less than GND voltage (ground voltage), no matter DI is high level or low level, and the 15 N type high-voltage MOS pipe HNM15 in the drop-down drive circuit of NMOS ends, and when under-voltage protection principle at this moment and DE=0, OUT is identical less than the situation of GND.At this moment draw the state in the drive circuit to be determined jointly by DI and output OUT on the PMOS, if DI=0, PG1=PG2=0 then draws the 7th P type high-voltage MOS pipe HPM7 and the 8th P type high-voltage MOS pipe HPM8 in the drive circuit all to turn-off on the PMOS; If DI=1; PG1=0 then, PG2=1, last the 7th P type high-voltage MOS pipe HPM7 conducting of drawing in the drive circuit of PMOS; The 8th P type high-voltage MOS pipe HPM8 ends; At this moment drawing on the PMOS has HPM6 and HPM7 conducting in the drive circuit, play overcurrent protection function, can be not excessive to the electric current of output OUT by external power source VDD.
3, when not adding power supply (when the VDD power supply is not arranged);
When output OUT went up to low level, PMOS is last to draw the 8th P type high-voltage MOS pipe HPM8 and the 7th P type high-voltage MOS pipe HPM7 in the drive circuit all to end, and output OUT can not draw electric current from external power source VDD; Principle was similar when the drop-down drive circuit of NMOS was lower than GND voltage with above-mentioned output OUT voltage; The voltage that link F_PW can follow output OUT descends, and the unidirectional turning circuit bleeder circuit of being made up of the 11 resistance R 11, the 5th N type metal-oxide-semiconductor NM5, the 6th N type metal-oxide-semiconductor NM6, the 7th N type metal-oxide-semiconductor NM7, the 9th N type high-voltage MOS pipe HNM9 and the 12 resistance R 12 guarantees that output OUT voltage ratio NS_C point hangs down 3 VTH voltages.The VGS of such the tenth N type high-voltage MOS pipe HNM10, the 11 N type high-voltage MOS pipe HNM11 and the 12 N type high-voltage MOS pipe HNM12 has about 2 times VTH (cut-in voltage) voltage; Above-mentioned the tenth N type high-voltage MOS pipe HNM10, the 11 N type high-voltage MOS pipe HNM11 and the 12 N type high-voltage MOS pipe HNM12 conducting; The grid potential of the 13 N type high-voltage MOS pipe HNM13, the 14 N type high-voltage MOS pipe HNM14, the 15 N type high-voltage MOS pipe HNM15 is all identical with F_PW; The high positively biased PN junction current potential of specific output end OUT, then the 15 N type high-voltage MOS pipe HNM15 ends.Because the 5th parasitic diode D5, the 6th parasitic diode D6 and the 4th parasitic diode D4 in the parasitic diode are back-to-back, thereby also do not have parasitic current path.There is not current path from output OUT to GND like this.
When output OUT went up to high level, the grid potential of the 14 N type high-voltage MOS pipe HMM14 and the 13 N type high-voltage MOS pipe HNM13 was that low level is ended, and output OUT can not take out electric current from GND; Principle that PMOS is last when drawing drive circuit to be higher than the external power source vdd voltage with the voltage of above-mentioned output OUT is identical.Output OUT is a high level, and the voltage that link F_NW can follow output OUT rises, the low parasitic diode forward voltage drop of specific output end OUT.Unidirectional turning circuit that the 11 P type high-voltage MOS pipe HPM11 and the tenth P type metal-oxide-semiconductor PM10, the 9th P type metal-oxide-semiconductor PM9 and the 8th P type metal-oxide-semiconductor PM8 form and the 8th resistance R 8 are formed bleeder circuit; Guarantee external power source VDD and PS_C point, promptly the grid potential difference of the 4th P type high-voltage MOS pipe HPM4 is at least 3 times VTH.Such the 3rd P type high-voltage MOS pipe HPM3, the 4th P type high-voltage MOS pipe HPM4 and the 5th P type high-voltage MOS pipe HPM5 conducting; The 7th P type high-voltage MOS pipe HPM7, the 8th P type high-voltage MOS pipe HPM8 are identical with link F_NW current potential with the grid of the 6th P type high-voltage MOS pipe HPM6, and the 6th P type high-voltage MOS pipe HPM6 ends; Parasitic diode is corresponding simultaneously the first parasitic diode D1, the second parasitic diode D2 and trixenie diode D3 do not have current path back-to-back; There is not current path from output OUT to external power source VDD like this.
EBI output stage drive circuit input of the present invention links to each other with the drive circuit control module, and output links to each other with EBI; Link V_BP links to each other with bias source respectively with link V_BN.EBI output stage drive circuit comprises and draws drive circuit and the drop-down drive circuit of NMOS on the PMOS; Draw drive circuit, the drop-down drive circuit of NMOS to carry out corresponding matching on the PMOS in the EBI output stage drive circuit according to the control signal of drive circuit control module input and the voltage of EBI; Can effectively protect overvoltage, under-voltage and overcurrent condition, improve the reliability of output stage drive circuit.
Claims (6)
1. the EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function is characterized in that: comprise and draw drive circuit and the drop-down drive circuit of NMOS on the PMOS; Draw drive circuit to comprise a P type metal-oxide-semiconductor (PM1) on the said PMOS; After linking to each other with the gate terminal of a N type high-voltage MOS pipe (HNM1), the gate terminal of a said P type metal-oxide-semiconductor forms link PG1; The back of the body grid end of the one P type metal-oxide-semiconductor (PM1) links to each other with source terminal, and the source terminal of a P type metal-oxide-semiconductor (PM1) interconnects with the 2nd P type metal-oxide-semiconductor (PM2), the 6th P type high-voltage MOS pipe (HPM6), the 6th P type metal-oxide-semiconductor (PM6) and corresponding back of the body grid end and the source terminal of the 7th P type metal-oxide-semiconductor (PM7) respectively; Link to each other through the 7th resistance (R7) between the drain electrode end of the one P type metal-oxide-semiconductor (PM1) and source terminal, and the drain electrode end of a P type metal-oxide-semiconductor (PM1) links to each other with the drain electrode end of a P type high-voltage MOS pipe (HPM1); The back of the body grid end of first high-voltage P-type MOS transistor (HPM1), source terminal all link to each other with the drain electrode end of a N type high pressure NMOS pipe (HNM1), and the source terminal of a P type high-voltage MOS pipe (HPM1) links to each other with the drain electrode end of the 4th P type high-voltage MOS pipe (HPM4), the gate terminal of the 8th P type high-voltage MOS pipe (HPM8) through second resistance (R2); The gate terminal of the one P type high-voltage MOS pipe (HPM1) links to each other with the gate terminal of the 2nd P type high-voltage MOS pipe (HPM2), the gate terminal of the 9th P type high-voltage MOS pipe (HPM9) and the gate terminal of the tenth P type high-voltage MOS pipe (HPM10), and the gate terminal of a P type high-voltage MOS pipe (HPM1) links to each other with the drain electrode end of the 3rd P type high-voltage MOS pipe (HPM3) through the 3rd resistance (R3);
The source terminal of the one N type high-voltage MOS pipe (HNM1) links to each other with back of the body grid end; And interconnect with the 2nd N type high-voltage MOS pipe (HNM2), the 3rd N type high-voltage MOS pipe (HNM3), a N type metal-oxide-semiconductor (NM1), the 4th N type high-voltage MOS pipe (HNM4) and corresponding back of the body grid end and the source terminal of the 5th N type high-voltage MOS pipe (HNM5) respectively, and the source terminal of a N type high-voltage MOS pipe (HNM1) links to each other with the source terminal and the back of the body grid end of the tenth P type high-voltage MOS pipe (HPM10) through the 8th resistance (R8);
After linking to each other with the gate terminal of the 2nd N type high-voltage MOS pipe (HNM2), the gate terminal of the 2nd P type metal-oxide-semiconductor (PM2) forms link PG2; The drain electrode end of the 2nd N type high-voltage MOS pipe (HNM2) links to each other with source terminal, the back of the body grid end of the 2nd P type high-voltage MOS pipe (HPM2); The drain electrode end of the 2nd P type high-voltage MOS pipe (HPM2) links to each other with the drain electrode end of the 2nd P type metal-oxide-semiconductor (PM2), links to each other through the 6th resistance (R6) between the drain electrode end of the 2nd P type metal-oxide-semiconductor (PM2) and source terminal; The source terminal of the drain electrode end of the 2nd N type high-voltage MOS pipe (HNM2) and the 2nd P type high-voltage MOS pipe (HPM2) all links to each other with the drain electrode end of the 5th P type high-voltage MOS pipe (HPM5), the gate terminal of the 7th P type high-voltage MOS pipe (HPM7) through first resistance (R1);
The gate terminal of source terminal, back of the body grid end and the 11 P type high-voltage MOS pipe (HPM11) of the drain electrode end of the gate terminal of the gate terminal of the 5th P type high-voltage MOS pipe (HPM5) and the 3rd P type high-voltage MOS pipe (HPM3), the gate terminal of the 4th P type high-voltage MOS pipe (HPM4), the 5th N type high-voltage MOS pipe (HNM5), the gate terminal of the 8th P type metal-oxide-semiconductor (PM8), drain electrode end, the tenth P type high-voltage MOS pipe (HPM10) links to each other; The back of the body grid end of the 5th P type high-voltage MOS pipe (HPM5), source terminal interconnect the back with the 3rd P type high-voltage MOS pipe (HPM3), the 4th P type high-voltage MOS pipe (HPM4), the 6th P type high-voltage MOS pipe (HPM6), the 7th P type high-voltage MOS pipe (HPM7) and corresponding back of the body grid end, the source terminal of the 8th P type high-voltage MOS pipe (HPM8) and form link F_NW;
The 3rd P type high-voltage MOS pipe (HPM3) links to each other with the gate terminal of the 6th P type high-voltage MOS pipe (HPM6) corresponding to the drain electrode end that links to each other with the 3rd resistance (R3); The drain electrode end of the 6th P type high-voltage MOS pipe (HPM6) links to each other with the anode tap of first parasitic diode (D1), and the cathode terminal of first parasitic diode (D1) links to each other with the back of the body grid end of the 6th P type high-voltage MOS pipe (HPM6); The drain electrode end of the 7th P type high-voltage MOS pipe (HPM7) links to each other with the anode tap of second parasitic diode (D2), and the cathode terminal of second parasitic diode (D2) links to each other with the back of the body grid end of the 7th P type high-voltage MOS pipe (HPM7); The drain electrode end of the 8th P type high-voltage MOS pipe (HPM8) links to each other with the anode tap of trixenie diode (D3), and the cathode terminal of trixenie diode (D3) links to each other with the back of the body grid end of the 8th P type high-voltage MOS pipe (HPM8); The corresponding connection with the source terminal of the 11 P type high-voltage MOS pipe (HPM11) of the drain electrode end of the drain electrode end of the 7th P type high-voltage MOS pipe (HPM7), the 8th P type high-voltage MOS pipe (HPM8) back forms output OUT;
The gate terminal of the 6th P type metal-oxide-semiconductor (PM6) is connected the back and forms power end V_VDD with the gate terminal of the 3rd N type high-voltage MOS pipe (HNM3); The gate terminal of the gate terminal of the 6th P type metal-oxide-semiconductor (PM6), the 3rd N type high-voltage MOS pipe (HNM3) all links to each other with the gate terminal of a N type metal-oxide-semiconductor (NM1); The drain electrode end of the 6th P type metal-oxide-semiconductor (PM6) links to each other with the drain electrode end of the 9th P type high-voltage MOS pipe (HPM9), and the back of the body grid end of the 9th P type high-voltage MOS pipe (HPM9), the corresponding back that connects of source terminal link to each other with the gate terminal of the 9th P type high-voltage MOS pipe (HPM9), the drain electrode end of the 3rd N type high-voltage MOS pipe (HNM3); The drain electrode end of the 6th P type metal-oxide-semiconductor (PM6), source terminal link to each other through the 5th resistance (R5);
After linking to each other with the drain electrode end of the 4th N type high-voltage MOS pipe (HNM4), the drain electrode end of the one N type metal-oxide-semiconductor (NM1) forms biasing link V_BP; The drain electrode end of the 4th N type high-voltage MOS pipe (HNM4) links to each other with the gate terminal of the 4th N type high-voltage MOS pipe (HNM4), the gate terminal of the 5th N type high-voltage MOS pipe (HNM5); The drain electrode end of the 7th P type metal-oxide-semiconductor (PM7) links to each other with the drain electrode end of the tenth P type high-voltage MOS pipe (HPM10), and the drain electrode end of the 7th P type metal-oxide-semiconductor (PM7) links to each other with source terminal, the back of the body grid end of the 7th P type metal-oxide-semiconductor (PM7) through the 4th resistance (R4); The gate terminal of the 7th P type metal-oxide-semiconductor (PM7) forms power end V_VDD-;
The back of the body grid end of the back of the body grid end of the back of the body grid end of the 8th P type metal-oxide-semiconductor (PM8), the 9th P type metal-oxide-semiconductor (PM9), the back of the body grid end of the tenth P type metal-oxide-semiconductor (PM10) and the 11 P type metal-oxide-semiconductor (HPM11) interconnects; And the drain electrode end of the 11 P type metal-oxide-semiconductor (HPM11) links to each other with the source terminal of the tenth P type metal-oxide-semiconductor (PM10), and the back of the body grid end of the source terminal of the drain electrode end of the 11 P type metal-oxide-semiconductor (HPM11), the tenth P type metal-oxide-semiconductor (PM10) and the 8th P type metal-oxide-semiconductor (PM8), the back of the body grid end of the 9th P type metal-oxide-semiconductor (PM9), the back of the body grid end of the tenth P type metal-oxide-semiconductor (PM10) and the back of the body grid end of the 11 P type metal-oxide-semiconductor (HPM11) interconnect;
The drop-down drive circuit of said NMOS comprises the 13 P type high-voltage MOS pipe (HPM13), and the corresponding connection with the gate terminal of the 3rd N type metal-oxide-semiconductor (NM3) of the gate terminal of said the 13 P type high-voltage MOS pipe (HPM13) back forms link NG1; The source terminal of the 13 P type high-voltage MOS pipe (HPM13), back of the body grid end interconnect with the 14 P type high-voltage MOS pipe (HPM14), the 11 P type high-voltage MOS pipe (HPM11), the 3rd P type metal-oxide-semiconductor (PM3), the 17 P type high-voltage MOS pipe (HPM17), source terminal, back of the body grid end that the 18 P type high-voltage MOS pipe (HPM18) is corresponding respectively, and source terminal through the 11 resistance (R11) and the 8th N type high-voltage MOS pipe (HNM8) of the source terminal of the 13 P type high-pressure MOS (HPM13), back of the body grid end, carry on the back the grid end and interconnect;
The source terminal of the drain electrode end of the 13 P type high-voltage MOS pipe (HPM13) and the drain electrode end of the 15 P type high-voltage MOS pipe (HPM15), the 6th N type high-voltage MOS pipe (HNM6), back of the body grid end interconnect, and the drain electrode end of the 13 P type high-voltage MOS pipe (HPM13) links to each other with the drain electrode end of the tenth N type high-voltage MOS pipe (HNM10), the gate terminal of the 13 N type high-voltage MOS pipe (HNM13) through the 9th resistance (R9); The drain electrode end of the gate terminal of the 15 P type high-voltage MOS pipe (HPM15), back of the body grid end, source terminal and the 6th N type high-voltage MOS pipe (HNM6) all links to each other with the drain electrode end of the 3rd N type metal-oxide-semiconductor (NM3); The back of the body grid end of the 3rd N type metal-oxide-semiconductor (NM3), source terminal and the 4th N type metal-oxide-semiconductor (NM4), the 2nd N type metal-oxide-semiconductor (NM2), back of the body grid end, source terminal that the 4th N type metal-oxide-semiconductor (NM4) is corresponding interconnect, and the back of the body grid end of the 3rd N type metal-oxide-semiconductor (NM3), source terminal all link to each other with the drain electrode end of the 15 N type high-voltage MOS pipe (HNM15);
The gate terminal of the 6th N type high-voltage MOS pipe (HNM6) links to each other with gate terminal, the 15 N type high-voltage MOS pipe (HNM15), the drain electrode end of the 12 N type high-voltage MOS pipe (HNM12), the drain electrode end of the 11 P type high-voltage MOS pipe (HPM11) and the drain electrode end of the 19 P type high-voltage MOS pipe (HPM19) of the 7th N type high-voltage MOS pipe (HNM7);
The corresponding connection with the gate terminal of the 4th N type metal-oxide-semiconductor (NM4) of the 14 P type high-voltage MOS pipe (HPM14) back forms link NG2; The drain electrode end of the 14 P type high-voltage MOS pipe (HPM14) links to each other with gate terminal with the source terminal of the drain electrode end of the 16 P type high-voltage MOS pipe (HPM16), the 7th N type high-voltage MOS pipe (HNM7), and the drain electrode end of the 14 P type high-voltage MOS pipe (HPM14) links to each other with the drain electrode end of the 11 N type high-voltage MOS pipe (HNM11), the gate terminal of the 14 N type high-voltage MOS pipe (HNM14) through the tenth resistance (R10); The drain electrode end of the gate terminal of the 16 P type high-voltage MOS pipe (HPM16), source terminal, back of the body grid end and the 7th N type high-voltage MOS pipe (HNM7) all links to each other with the drain electrode end of the 4th N type metal-oxide-semiconductor (NM4);
The gate terminal of the tenth N type high-voltage MOS pipe (HNM10) links to each other with the gate terminal of the 11 N type high-voltage MOS pipe (HNM11), the gate terminal of the 12 N type high-voltage MOS pipe (HNM12); The back of the body grid end of the tenth N type high-voltage MOS pipe (HNM10), source terminal and the 11 N type high-voltage MOS pipe (HNM11), back of the body grid end, source terminal that the 12 N type high-voltage MOS pipe (HNM12) is corresponding interconnect; The gate terminal of the 11 N type high-voltage MOS pipe (HNM11) also links to each other with drain electrode end, the source terminal of the 8th N type high-voltage MOS pipe (HNM8), the back of the body grid end of the 18 P type high-voltage MOS pipe (HPM18); Back of the body grid end, source terminal that the 13 N type high-voltage MOS pipe (HNM13), the 14 N type high-voltage MOS pipe (HNM14) and the 15 N type high-voltage MOS pipe (HNM15) are corresponding interconnect, and the corresponding back of the body grid end of the 13 N type high-voltage MOS pipe (HNM13), the 14 N type high-voltage MOS pipe (HNM14) and the 15 N type high-voltage MOS pipe (HNM15), source terminal and the tenth N type high-voltage MOS pipe (HNM10), the 11 N type high-voltage MOS pipe (HNM11), back of the body grid end, source terminal that the 12 N type high-voltage MOS pipe (HNM12) is corresponding interconnect; The source terminal of the 15 N type high-voltage MOS pipe (HNM15) links to each other with the anode tap of the 4th parasitic diode (D4); The cathode terminal of the 4th parasitic diode (D4) links to each other with the drain electrode end of the 15 N type high-voltage MOS pipe (HNM15), the source terminal of the 14 N type high-voltage MOS pipe (HNM14), back of the body grid end link to each other with the anode tap of the 5th parasitic diode (D5); The cathode terminal of the 5th parasitic diode (D5) links to each other with the drain electrode end of the 14 N type high-voltage MOS pipe (HNM14); The back of the body grid end of the 13 N type high-voltage MOS pipe (HNM13), source terminal link to each other with the anode tap of the 6th parasitic diode (D6), and the cathode terminal of the 6th parasitic diode (D6) links to each other with the drain electrode end of the 13 N type high-voltage MOS pipe (HNM13); The corresponding back that connects of the drain electrode end of the 13 N type high-voltage MOS pipe (HNM13), the 14 N type high-voltage MOS pipe (HNM14) links to each other with output OUT;
The drain electrode end of the 11 P type high-voltage MOS pipe (HPM11) links to each other with the drain electrode end of the 19 P type high-voltage MOS pipe (HPM19); The corresponding connection with the gate terminal of the 2nd N type metal-oxide-semiconductor (NM2) of the gate terminal of the 11 P type high-voltage MOS pipe (HPM11) back forms link V_GND, and the gate terminal of the 11 P type high-voltage MOS pipe (HPM11) also links to each other with the gate terminal of the 3rd P type metal-oxide-semiconductor (PM3); The gate terminal of the 19 P type high-voltage MOS pipe (HPM19), source terminal, back of the body grid end all link to each other with the drain electrode end of the 2nd N type metal-oxide-semiconductor (NM2); The drain electrode end of the 19 P type high-voltage MOS pipe (HPM19) links to each other with the gate terminal of the 8th N type high-voltage MOS pipe (HNM8); The drain electrode end of the 3rd P type metal-oxide-semiconductor (PM3) and drain electrode end, the gate terminal of the 17 P type high-voltage MOS pipe (HPM17) interconnect the back and form link V_BN; The gate terminal of the 17 P type high-voltage MOS pipe (HPM17) links to each other with the gate terminal of the 18 P type high-voltage MOS pipe (HPM18);
The drain electrode end of the 8th N type high-voltage MOS pipe (HNM8) links to each other with the drain electrode end of the 4th N type metal-oxide-semiconductor (NM4), and the gate terminal of the 4th N type metal-oxide-semiconductor (NM4) forms link V_GND-; The three the 11 resistance (R11) are corresponding to link to each other with the gate terminal of the 5th N type metal-oxide-semiconductor (NM5), the drain electrode end of the 5th N type metal-oxide-semiconductor (NM5), the gate terminal of the 9th N type high-voltage MOS pipe (HNM9) with the back of the body grid end of the 8th N type high-voltage MOS pipe (HNM8), the end that source terminal links to each other; The source terminal of the 5th N type metal-oxide-semiconductor (NM5) links to each other with gate terminal, the drain electrode end of the 6th N type metal-oxide-semiconductor (NM6), and the source terminal of the 6th N type metal-oxide-semiconductor (NM6) links to each other with gate terminal, the drain electrode end of the 7th N type metal-oxide-semiconductor (NM7); The source terminal of the 7th N type metal-oxide-semiconductor (NM7) links to each other with the drain electrode end of the 9th N type high-voltage MOS pipe (HNM9); The back of the body grid end of the back of the body grid end of the back of the body grid end of the 5th N type metal-oxide-semiconductor (NM5), the 6th N type metal-oxide-semiconductor (NM6), the back of the body grid end of the 7th N type metal-oxide-semiconductor (NM7) and the 9th N type high-voltage MOS pipe (HNM9) interconnects, and the drain electrode end of the source terminal of the 7th N type metal-oxide-semiconductor (NM7), the 9th P type high-voltage MOS pipe (HNM9) all links to each other with the back of the body grid end of the 9th N type high-voltage MOS pipe (HNM9); The source terminal of the 9th N type high-voltage MOS pipe (HNM9) links to each other with output OUT through the 12 resistance (R12).
2. the EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function according to claim 1; It is characterized in that: the source terminal that a said P type metal-oxide-semiconductor (PM1), the 2nd P type metal-oxide-semiconductor (PM2), the 6th P type metal-oxide-semiconductor (PM6), the 7th P type metal-oxide-semiconductor (PM7), the 13 P type high-voltage MOS pipe (HPM13), the 14 P type high-voltage MOS pipe (HPM14), the 11 P type metal-oxide-semiconductor (HPM11), the 3rd P type metal-oxide-semiconductor (PM3), the 17 P type high-voltage MOS pipe (HPM17) and the 18 P type high-voltage MOS pipe (HPM18) are corresponding, back of the body grid end all link to each other with external power source VDD, and the anode tap of the drain electrode end of the 6th P type high-voltage MOS pipe (HPM6), first parasitic diode (D1) all links to each other with external power source VDD; The source terminal of the 8th N type high-voltage MOS pipe (HNM8), back of the body grid end link to each other with external power source VDD through the 11 resistance (R11);
The source terminal that the one N type high-voltage MOS pipe (HNM1), the 2nd N type high-voltage MOS pipe (HNM2), the 3rd N type high-voltage MOS pipe (HNM3), a N type metal-oxide-semiconductor (NM1), the 4th N type high-voltage MOS pipe (HNM4), the 5th N type high-voltage MOS pipe (HNM5), the 3rd N type metal-oxide-semiconductor (NM3), the 4th N type metal-oxide-semiconductor (NM4), the 2nd N type metal-oxide-semiconductor (NM2) and the 4th N type metal-oxide-semiconductor (NM4) are corresponding, back of the body grid end all link to each other with outside GND; The source terminal of the tenth P type high-voltage MOS pipe (HPM10), back of the body grid end link to each other with outside GND through the 8th resistance (R8), and the cathode terminal of the 15 N type high-voltage MOS pipe (HNM15) and the 4th parasitic diode (D4) all links to each other with outside GND.
3. the EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function according to claim 2; It is characterized in that: a said N type high-voltage MOS pipe (HNM1), the 2nd N type high-voltage MOS pipe (HNM2), the 3rd N type high-voltage MOS pipe (HNM3), the 4th N type high-voltage MOS pipe (HNM4), the 5th N type high-voltage MOS pipe (HNM5), the 6th N type high-voltage MOS pipe (HNM6), the 7th N type high-voltage MOS pipe (HNM7) and the 8th N type high-voltage MOS pipe (HNM8) adopt the drain terminal isolated tube, and corresponding isolation well all is connected to external power source VDD.
4. the EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function according to claim 2; It is characterized in that: said the 9th N type high-voltage MOS pipe (HNM9), the tenth N type high-voltage MOS pipe (HNM10), the 11 N type high-voltage MOS pipe (HNM11), the 12 N type high-voltage MOS pipe (HNM12), the 13 N type high-voltage MOS pipe (HNM13), the 14 N type high-voltage MOS pipe (HNM14), the 15 N type high-voltage MOS pipe (HNM15), the 5th N type metal-oxide-semiconductor (NM5), the 6th N type metal-oxide-semiconductor (NM6) and the 7th N type metal-oxide-semiconductor (NM7) all adopt the drain terminal isolated tube, and its corresponding isolation well interconnects and receive node F_NW.
5. the EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function according to claim 1; It is characterized in that: said the 5th N type metal-oxide-semiconductor (NM5), the 6th N type metal-oxide-semiconductor (NM6), the 7th N type metal-oxide-semiconductor (NM7) and the 9th N type high-voltage MOS pipe (HNM9) adopt the drain terminal isolated tube, and all are distributed in the same isolation well.
6. the EBI output stage drive circuit with overvoltage, under-voltage and overcurrent protection function according to claim 1; It is characterized in that: said the tenth N type high-voltage MOS pipe (HNM10), the 11 N type high-voltage MOS pipe (HNM11), the 12 N type high-voltage MOS pipe (HNM12), the 13 N type high-voltage MOS pipe (HNM13), the 14 N type high-voltage MOS pipe (HNM14) and the 15 N type high-voltage MOS pipe (HNM15) all adopt the drain terminal isolated tube, and all are arranged in the N type isolation well.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107342923A (en) * | 2016-04-28 | 2017-11-10 | 西门子公司 | Device with least two bus users |
| CN107342923B (en) * | 2016-04-28 | 2020-02-28 | 西门子公司 | Device with at least two bus subscribers |
| US10666456B2 (en) | 2016-04-28 | 2020-05-26 | Siemens Aktiengesellschaft | Arrangement with at least two bus subscribers |
| CN107959492A (en) * | 2016-10-17 | 2018-04-24 | 英飞凌科技股份有限公司 | For driving the method and drive circuit and electrical fuse circuit of electronic switch |
| CN114301034A (en) * | 2021-12-28 | 2022-04-08 | 苏州锴威特半导体股份有限公司 | Gallium nitride power tube driving circuit with overcurrent protection function |
| CN114301034B (en) * | 2021-12-28 | 2024-06-04 | 苏州锴威特半导体股份有限公司 | Gallium nitride power tube driving circuit with overcurrent protection function |
| CN114995565A (en) * | 2022-05-17 | 2022-09-02 | 深圳南云微电子有限公司 | Short-circuit protection method, circuit and bus driver |
| CN114995565B (en) * | 2022-05-17 | 2024-02-09 | 深圳南云微电子有限公司 | Short-circuit protection method, circuit and bus driver |
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Denomination of invention: Bus interface output stage driving circuit with overvoltage, undervoltage and overcurrent protection functions Effective date of registration: 20140806 Granted publication date: 20140416 Pledgee: Agricultural Bank of China Limited by Share Ltd Wuxi science and Technology Branch Pledgor: WST (Wuxi) Microelectronic Co., Ltd. Registration number: 2014990000636 |
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