CN102522333A - 一种平面型双向触发二极管芯片制造方法 - Google Patents
一种平面型双向触发二极管芯片制造方法 Download PDFInfo
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- CN102522333A CN102522333A CN2012100040601A CN201210004060A CN102522333A CN 102522333 A CN102522333 A CN 102522333A CN 2012100040601 A CN2012100040601 A CN 2012100040601A CN 201210004060 A CN201210004060 A CN 201210004060A CN 102522333 A CN102522333 A CN 102522333A
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CN 201210004060 CN102522333B (zh) | 2012-01-09 | 2012-01-09 | 一种平面型双向触发二极管芯片制造方法 |
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CN 201210004060 CN102522333B (zh) | 2012-01-09 | 2012-01-09 | 一种平面型双向触发二极管芯片制造方法 |
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CN102522333A true CN102522333A (zh) | 2012-06-27 |
CN102522333B CN102522333B (zh) | 2013-12-25 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377123A (zh) * | 2013-08-14 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | 成长低应力igbt沟槽型栅极的方法 |
Citations (12)
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JPH06216373A (ja) * | 1993-01-13 | 1994-08-05 | Sharp Corp | 半導体素子 |
JPH06244408A (ja) * | 1993-02-15 | 1994-09-02 | Fuji Electric Co Ltd | 双方向型半導体装置の製造方法 |
JPH10172913A (ja) * | 1996-12-09 | 1998-06-26 | Hitachi Ltd | シリコン半導体装置の製造方法 |
JPH10294448A (ja) * | 1997-04-22 | 1998-11-04 | Hitachi Ltd | 高耐圧半導体装置の製造方法 |
EP0881672A1 (fr) * | 1997-05-28 | 1998-12-02 | STMicroelectronics S.A. | Mur d'isolement entre composants de puissance |
JP2000040833A (ja) * | 1998-07-23 | 2000-02-08 | Mitsubishi Materials Corp | 半導体装置の製造方法 |
JP2002016266A (ja) * | 2000-06-28 | 2002-01-18 | Sankosha Corp | 半導体素子とその製造方法 |
CN101399201A (zh) * | 2008-11-13 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | 一种硅双向触发二极管的制造方法 |
CN201450007U (zh) * | 2009-08-25 | 2010-05-05 | 南通明芯微电子有限公司 | 一种双向触发二极管芯片 |
CN102082093A (zh) * | 2010-12-10 | 2011-06-01 | 天津中环半导体股份有限公司 | 一种双向稳压二极管db3芯片及其生产工艺 |
CN102129985A (zh) * | 2010-12-29 | 2011-07-20 | 朝阳无线电元件有限责任公司 | 一种玻封双向触发二极管芯片的制造方法 |
CN102244104A (zh) * | 2011-07-07 | 2011-11-16 | 重庆平伟实业股份有限公司 | 一种平、台结合双向二极管芯片及制作工艺 |
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2012
- 2012-01-09 CN CN 201210004060 patent/CN102522333B/zh not_active Expired - Fee Related
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06216373A (ja) * | 1993-01-13 | 1994-08-05 | Sharp Corp | 半導体素子 |
JPH06244408A (ja) * | 1993-02-15 | 1994-09-02 | Fuji Electric Co Ltd | 双方向型半導体装置の製造方法 |
JPH10172913A (ja) * | 1996-12-09 | 1998-06-26 | Hitachi Ltd | シリコン半導体装置の製造方法 |
JPH10294448A (ja) * | 1997-04-22 | 1998-11-04 | Hitachi Ltd | 高耐圧半導体装置の製造方法 |
EP0881672A1 (fr) * | 1997-05-28 | 1998-12-02 | STMicroelectronics S.A. | Mur d'isolement entre composants de puissance |
JP2000040833A (ja) * | 1998-07-23 | 2000-02-08 | Mitsubishi Materials Corp | 半導体装置の製造方法 |
JP2002016266A (ja) * | 2000-06-28 | 2002-01-18 | Sankosha Corp | 半導体素子とその製造方法 |
CN101399201A (zh) * | 2008-11-13 | 2009-04-01 | 杭州杭鑫电子工业有限公司 | 一种硅双向触发二极管的制造方法 |
CN201450007U (zh) * | 2009-08-25 | 2010-05-05 | 南通明芯微电子有限公司 | 一种双向触发二极管芯片 |
CN102082093A (zh) * | 2010-12-10 | 2011-06-01 | 天津中环半导体股份有限公司 | 一种双向稳压二极管db3芯片及其生产工艺 |
CN102129985A (zh) * | 2010-12-29 | 2011-07-20 | 朝阳无线电元件有限责任公司 | 一种玻封双向触发二极管芯片的制造方法 |
CN102244104A (zh) * | 2011-07-07 | 2011-11-16 | 重庆平伟实业股份有限公司 | 一种平、台结合双向二极管芯片及制作工艺 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104377123A (zh) * | 2013-08-14 | 2015-02-25 | 上海华虹宏力半导体制造有限公司 | 成长低应力igbt沟槽型栅极的方法 |
CN104377123B (zh) * | 2013-08-14 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 成长低应力igbt沟槽型栅极的方法 |
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Address after: 225321 south side of Chuangye Avenue, Xuzhuang street, Gaogang District, Taizhou City, Jiangsu Province Patentee after: Xue Lielong Address before: Five No. 225000 mountain road, Guangling District, Jiangsu, Yangzhou, 55 Patentee before: Xue Lielong |
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Effective date of registration: 20200904 Address after: One of the second floor, No.1, South Industrial Zone, duningdi, Bijiang community, Beijiao Town, Shunde District, Foshan City, Guangdong Province Patentee after: FOSHAN YICHEN ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 225321 south side of Chuangye Avenue, Xuzhuang street, Gaogang District, Taizhou City, Jiangsu Province Patentee before: Xue Lielong |
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Granted publication date: 20131225 Termination date: 20210109 |