CN102498081B - 介电陶瓷组成物和积层陶瓷电容器 - Google Patents
介电陶瓷组成物和积层陶瓷电容器 Download PDFInfo
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- CN102498081B CN102498081B CN201080039171.5A CN201080039171A CN102498081B CN 102498081 B CN102498081 B CN 102498081B CN 201080039171 A CN201080039171 A CN 201080039171A CN 102498081 B CN102498081 B CN 102498081B
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- 239000000470 constituent Substances 0.000 title claims abstract description 97
- 239000000919 ceramic Substances 0.000 title claims abstract description 83
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 10
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 229910052742 iron Inorganic materials 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 8
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical class [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011159 matrix material Substances 0.000 claims description 11
- 238000006073 displacement reaction Methods 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052691 Erbium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052689 Holmium Inorganic materials 0.000 claims description 4
- 229910052765 Lutetium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 239000002994 raw material Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 229910002077 partially stabilized zirconia Inorganic materials 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- 230000015556 catabolic process Effects 0.000 description 11
- 150000001875 compounds Chemical class 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000007747 plating Methods 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 210000000981 epithelium Anatomy 0.000 description 5
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000006071 cream Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000019771 cognition Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- -1 oxyhydroxide Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 229910018054 Ni-Cu Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910018481 Ni—Cu Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 235000021168 barbecue Nutrition 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000004939 coking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
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Abstract
一种介电陶瓷组成物,其以钛酸钡系复合氧化物为主成分,至少含有由Al构成的第一副成分和从Fe、Co、Ni、Cu和Zn之中选择的1种以上的元素所构成的第二副成分,所述Al的含量为,相对于所述主成分100摩尔份为0.02~6摩尔份,所述第二副成分相对于所述Al的含有比率以摩尔比计为0.01~0.4。介电层(1a~1g)由该介电陶瓷组成物的烧结体形成。根据需要可以添加稀土类元素等各种副成分。由此可实现既能够确保高可靠性,又能够确保良好的DC偏压特性的介电陶瓷组成物,以及使用该介电陶瓷组成物的积层陶瓷电容器。
Description
技术领域
本发明涉及介电陶瓷组成物和使用了它的积层陶瓷电容器。
背景技术
作为高电容率系的积层陶瓷电容器用介电陶瓷组成物,历来已知的是以BaTiO3为主成分,并根据所要求的特性添加稀土类元素等的各种副成分。
例如,在专利文献1中提出有一种介电陶瓷组成物,其以钛酸钡为主成分,含有如下作为副成分:MgO;烧结助剂;从V2O5、MoO3、WO3中选择的至少1种;特定的稀土类氧化物;CaZrO3或CaO+ZrO2;MnO或Cr2O3;和Al2O3,相对于主成分100摩尔份,MgO为0.2~0.75摩尔份,Mn或Cr为0.1~0.3摩尔份,Al2O3为0.5~4摩尔份(但不包括4摩尔份),0.3≤(Mn+Cr)/Mg≤0.5。
在该专利文献1中,对于由钛酸钡构成的主成分,除了添加稀土类元素、Mg、Mn以外,通过还添加Al,是要得到高电容率和高可靠性(寿命特性)。
先行技术文献
专利文献
专利文献1:特开2006-342025号公报
但是,在外加DC偏压的环境下使用专利文献1的介电陶瓷组成物时,即使能够确保可靠性,DC偏压造成的电容率的降低也很大,存在DC偏压特性劣化这样的问题点。
发明内容
本发明鉴于这样的情况而做,其目的在于,提供一种既能够确保高可靠性,又能够确保良好的DC偏压特性的介电陶瓷组成物,和使用了该介电陶瓷组成物的积层陶瓷电容器。
本发明者们为了达成上述目的而进行锐意研究时,得到如下这样的认知:除了规定量的Al以外,再在钛酸钡系复合氧化物中添加从Fe、Co、Ni、Cu和Zn之中选择的至少1种以上的元素,并使之与Al的含有比率达到规定比例,由此,即使外加DC偏压时,也能够抑制电容率的降低,并且能够确保高可靠性。
本发明基于这样的认知而做,本发明的介电陶瓷组成物,其特征在于,以BaTiO3系复合氧化物为主成分,含有至少由Al构成的第一副成分和从Fe、Co、Ni、Cu和Zn之中选择的1种以上的元素所构成的第二副成分,所述Al的含量为,相对于所述主成分100摩尔份为0.02~6摩尔份,所述第二副成分相对于所述Al的含有比率以摩尔比计为0.01~0.4。
另外,本发明的介电陶瓷组成物,优选含有稀土类元素。
此外,本发明的介电陶瓷组成物,优选所述稀土类元素使用从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Y、Ho、Er、Tm、Yb和Lu之中选择的至少1种。
另外,本发明的介电陶瓷组成物,优选构成所述主成分的Ba的一部,由Ca和Sr之中的至少任意一种置换。
此外,本发明的介电陶瓷组成物,优选构成所述主成分的Ti的一部分,由Zr和Hf之中的至少任意一种置换。
另外,本发明的介电陶瓷组成物,优选构成所述主成分的Ba位点和Ti位点的调配摩尔比为0.995~1.03。
另外,本发明的积层陶瓷电容器,具有介电层和内部电极被交替层叠而成的陶瓷基体,并且在该陶瓷基体的两端部形成有外部电极,该外部电极和所述内部电极被电连接,其特征在于,所述介电层由所述介电陶瓷组成物的烧结体形成。
根据本发明的介电陶瓷组成物,以BaTiO3系复合氧化物为主成分,含有至少由Al构成的第一副成分和从Fe、Co、Ni、Cu和Zn之中选择的1种以上的元素所构成的第二副成分,所述Al的含量相对于所述主成分100摩尔份,为0.02~6摩尔份,所述第二副成分相对于所述Al的含有比率以摩尔比计为0.01~0.4,因此,即使在外加DC偏压时,也能够抑制电容率的降低,并且可以确保高可靠性。
另外,根据本发明的积层陶瓷电容器,因为介电层由所述介电陶瓷组成物的烧结体形成,所以,能够得到DC偏压特性和可靠性可以并立的积层陶瓷电容器。
具体来说,可以得到具有如下高可靠性的积层陶瓷电容器:即使外加10V的直流电压,也能够将静电容量的容量变化率抑制在-60%以内,并且即使在125℃的高温下长时间连续外加DC40V的电压1500小时,也不会发生故障或故障发生率极低。
附图说明
图1是表示使用本发明的介电陶瓷组成物制造的积层陶瓷电容器的一个实施方式的剖面图。
具体实施方式
接下来,详细说明本发明的实施方式。
作为本发明的一个实施方式的介电陶瓷组成物,由下述通式(A)表示。
100BamTiO3+(α/2)Al2O3+βMOx…(A)
在此,M表示从Fe、Co、Ni、Cu和Zn之中选择的1种以上的元素,x表示由M的价数单值确定的正数。
另外,α和β满足算式(1)、(2)。
0.02≤α≤6…(1)
0.01≤β/α≤0.4…(2)
即,本介电陶瓷组成物,以钛酸钡系复合氧化物为主成分,含有作为第一副成分的包含Al的Al2O3,和作为第二副成分的包含元素M(M是从Fe、Co、Ni、Cu和Zn之中选择的1种以上的元素)的MOx。
另外,Al2O3换算成Al,以相对于主成分100摩尔份为0.02~6摩尔份的比例被添加到主成分中,并且包含第二副成分M的MOx,使之与Al的含有比率β/α以摩尔比计为0.01~0.4,如此添加到主成分中。
如此通过通式(A)满足算式(1)、(2),即使在外加DC偏压的环境下使用积层陶瓷电容器,静电容量的容量变化率的降低也得到抑制,从而能够得到良好的DC偏压特性,并且即使受到长时间高温负荷,也能够抑制故障的发生,可以确保高可靠性。
以下,阐述将作为第一副成分的Al含量α,和第二副成分M对于Al的含有比率β/α限定在算式(1)、(2)的范围内的理由。
(1)Al含量α
相对于由BamTiO3构成的主成分,含有规定量的Al时,借助与以含有比率β/α含有的第二副成分M的协同作用,能够实现DC偏压特性和可靠性的并立。但是,若相对于主成分100摩尔份的Al含量α低于0.02摩尔份,则高温负荷试验中的不合格品有可能增加。
另一方面,若Al含量α相对于主成分100摩尔份超过6摩尔份,则外加DC偏压时的静电容量的容量变化率变大,电容率的降低显著,DC偏压特性有可能劣化。
因此,在本实施方式中,Al含量α相对于主成分100摩尔份为0.02~6摩尔份,如此来调制Al2O3的含量。
(2)含有比率β/α
相对于由BamTiO3构成的主成分,含有规定量的第二副成分时,借助与上述的Al添加的协同作用,能够实现DC偏压特性和可靠性的并立。但是,若第二副成分M相对于Al的含有比率β/α以摩尔比计低于0.01,则外加DC偏压时的静电容量的容量变化率变大,电容率的降低变得显著,得到期望的DC偏压特性困难。另一方面,若前述含有比率β/α以摩尔比计超过0.4,则受到长时间高温负荷时,绝缘电阻的降低变得显著的概率加大,有可能招致可靠性降低。
因此,在本实施方中,使第二副成分M相对于Al的含有比率β/α以摩尔比计为0.01~0.4,如此调制第二副成分的含量。
于是,如此通过通式(A)满足算式(1)、(2),可以使DC偏压特性和可靠性并立。
还有,主成分中的Ba位点和Ti位点的调配摩尔比m在化学计量上为1.000,但调配摩尔比m只要在0.995~1.03的范围,即使Ba位点浓或Ti位点浓,仍可以避免对DC偏压特性和可靠性造成影响。因此,优选根据需要,在上述范围内设定调配摩尔比m。
此外,本发明的介电陶瓷组成物,能够在不损害DC偏压特性和可靠性的范围内添加各种副成分,例如,从提高介电性能和温度特性提高的观点出发,也可以添加稀土类元素。
这时,介电陶瓷组成物由下述通式(B)表示。
100BamTiO3+(α/2)Al2O3+βMOx+(γ/2)R2O3…(B)
而且,作为这样的稀土类元素R,可以适宜使用从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Y、Ho、Er、Tm、Yb和Lu之中选择的1种或其组合。
另外,作为稀土类氧化物R2O3的含量(γ/2),优选相对于主成分100摩尔份为0.5~3.0摩尔份,以R换算优选为1.0~6.0摩尔份,本发明者们确认,如果在这些范围内,则不会对DC偏压特性和可靠性造成影响。
此外,也可以用Ca和/或Sr置换主成分中的Ba的一部分,或用Zr和/或Hf置换Ti的一部分。
这时,介电陶瓷组成物能够由组成式(C)表示。
100(Ba1-x-yCaxSry)m(Ti1-w-zZrwHfZ)O3
+(α/2)Al2O3+βMOx …(C)
接着,对于使用本介电陶瓷制造的积层陶瓷电容器进行详述。
图1是模式化地表示上述积层陶瓷电容器的一个实施方式的剖面图。
该积层陶瓷电容器,在陶瓷基体10埋设有内部电极2a~2f,并且在该陶瓷基体10的两端部形成有外部电极3a、3b,此外在该外部电极3a、3b的表面形成有第一镀敷皮膜4a、4b和第二镀敷皮膜5a、5b。
即,陶瓷基体10,是由本发明的介电陶瓷组成物形成的介电层1a~1g和内部电极层2a~2f被交替层叠,烧成而成,内部电极层2a、2c、2e与外部电极3a电连接,内部电极层2b、2d、2f与外部电极3b电连接。然后,在内部电极层2a、2c、2e与内部电极层2b、2d、2f的对置面间形成静电容量。
接下来,对于上述积层陶瓷电容器的制造方法进行详述。
首先,作为陶瓷原材料,准备Ba化合物、Ti化合物,根据需要准备Ca化合物、Sr化合物、Zr化合物、Hf化合物,使Ba位点和Ti位点的调配摩尔比m例如为0.995~1.03的范围,如此称量上述陶瓷原材料。
其次,将该称量物与PSZ(Partially Stabilized Zirconia:部分稳定氧化锆)球等的圆石和纯水一起投入球磨机,以湿式进行充分地混合粉碎后,以1000℃以上的温度进行预烧而合成,粉碎而制作成主成分粉末。
接着,准备作为第一副成分的含有Al的Al2O3,作为第二副成分的含有M(M为Fe、Co、Ni、Cu和Zn之中的至少1种以上)的MOx,此外根据需要,再准备作为第三副成分的含有稀土类元素R的R2O3。
然后,使Al2O3和MOx满足上述算式(1)、(2)而进行称量,再根据需要称量适量的R2O3,将这些主成分和副成分再次与PSZ球和纯水一起投入球磨机并混合,由此得到原料粉末。
接着,将有机粘合剂和有机溶剂加入上述原料粉末,在球磨机内进行湿式混合,由此制作陶瓷浆料。然后,使用刮刀法等的成形加工法,对于该陶瓷浆料进行薄片成形,得到陶瓷生片。
接着,使用内部电极用导电糊膏,在上述陶瓷生片上进行丝网印刷,在陶瓷生片上形成规定形状的导电层。
还有,作为内部电极用导电糊膏所含有的导电性材料,从低成本化的观点出发,优选使用以Ni、Cu或其合金为主成分的贱金属材料。
接着,将形成有导电层的陶瓷生片沿规定方向层叠规定片数,得到陶瓷积层体。
然后,将该陶瓷积层体加热至250~400℃的温度,燃烧、除去粘合剂后,在控制为10-9~10-12MPa的氧分压的由H2-N2-H2O气体构成的还原性气氛中进行烧成处理。同此导电膜和陶瓷生片共同被烧结,得到内部电极2a~2f和介电层1a~1g被交替层叠的陶瓷基体10。
接着,在陶瓷基体10的两端面涂布外部电极用导电糊膏,进行烧烤处理,由此形成外部电极3a、3b。
还有,关于外部电极用导电糊膏所含有的导电性材料,从低成本化的观点出发,也优选使用以Ni、Cu及其合金为主成分的贱金属材料。
另外,作为外部电极3a、3b的形成方法,可以在陶瓷积层体的两端面涂布外部电极用导电糊膏后,现陶瓷积层体同时实施烧成处理。
而后,最后实施电镀,在外部电极3a、3b的表面形成由Ni、Cu、Ni-Cu合金等构成的第一镀敷皮膜4a、4b,再在该第一镀敷皮膜4a、4b的表面形成由焊料和锡等构成的第二镀敷皮膜5a、5b,由此制造积层陶瓷电容器。
如此,本积层陶瓷电容器,其介电层1a~1g由上述介电陶瓷组成物的烧结体形成,因此即使外加直流电压,静电容量的容量变化率也会得到抑制,能够得到良好的DC偏压特性,而且即使经受长时间高温负荷,绝缘电阻也不会降低,能够得到具有高可靠性的积层陶瓷电容器。
具体来说,可以得到具有如下高可靠性的积层陶瓷电容器:即使外加10V的直流电压,也能够将静电容量的容量变化率抑制在-60%以内,并且即使在125℃的高温下长时间连续外加DC40V的电压1500小时,故障发生率仍然很低。
还有,本发明并不限定于上述实施方式。例如,在不损害DC偏压特性和可靠性的范围,优选还添加各种副成分,例如,从使耐还原性提高的观点出发,优选添加MnO,或者从提高烧结性的观点出发,优选添加SiO2,或者从提高温度特性的观点出发,优选适宜添加V2O5等。另外,也可以是使上述组成式(A)~(C)加以组合的方式。
另外,在上述实施方式中,主成分由所谓固相合成法制作,但也可以通过水解法、水热合成法和共沉淀法等制作。此外,关于Ba化合物、Ti化合物等的起始原料,可以根据合成反应的方式,适宜选择碳酸盐、氧化物、硝酸盐、氢氧化物、有机酸盐、醇盐、螯形化合物等。
接下来,具体说明本发明的实施例。
实施例1
首先,作为陶瓷原材料,准备BaCO3、TiO2,规定量称量这些陶瓷原材料之后,将这些称量物与PSZ球和纯水一起投入球磨机加以混合,进行预烧,合成由组成式Ba1.01TiO3构成的复合氧化物,将其粉碎得到主成分粉末。
其次,准备作为第一副成分的含有Al的Al2O3;作为含有第二副成分M的MOx的Fe2O3(FeO3/2)、CoO、NiO、CuO和ZnO;作为第三副成分R的含有Dy的Dy2O3,再准备MnO和SiO2。
接着,相对于主成分100摩尔份,分别称量Al2O3为0.5摩尔份(换算成Al为1.0摩尔份)、Dy2O3为1.0摩尔份(换算成Dy为2.0摩尔份)、MnO为0.2摩尔份、SiO2为1.0摩尔份,此外,相对于Al的第二副成分M的含有比率β/α,如表1所示,为0.005~0.45的范围,如此而称量MOx。
还有,表1中、试料编号26,是将CoO和NiO的混合比率换算成Co、Ni,使之为1∶1进行称量,试料编号27是将NiO和CuO的混合比率换算成Ni、Cu,使之为1∶1进行称量,试料编号28是将CoO、NiO和CuO的混合比率换算成Co、Ni和Cu,使之为1∶2∶1进行称量。
另外,试料编号29,是使MnO含量相对于主成分100摩尔份,以Mn换算总计为0.3摩尔份,如此来称量MnO,而代替添加第二副成分M。即,除了上述的0.2摩尔份以外,使Mn过剩0.1摩尔份,如此称量MnO。
然后,将这些主成分和副成分再次与PSZ球和纯水一起投入球磨机加以混合,由此得到原料粉末。
接着,将聚乙烯醇缩丁醛系粘合剂和作为有机溶剂的乙醇加入上述原料粉末,在球磨机内进行湿式混合,由此制作陶瓷浆料。
然后,使用刮刀法,使烧成后的介电元件厚度为2.0μm,如此对于该陶瓷浆料进行薄片成形,得到矩形的陶瓷生片。
接着,准备含有Ni作为导电成分的内部电极用导电糊膏。然后,使用该导电糊膏在上述陶瓷生片上进行丝网印刷,在陶瓷生片上形成规定形状的导电层。
接着,将形成有导电层的陶瓷生片在规定方向上层叠规定片数,得到陶瓷积层体。
而后,以大约400℃加热该陶瓷积层体,燃烧、除去粘合剂之后,在H2-N2-H2O气体所构成的还原性气氛中进行烧成,得到埋设有内部电极的陶瓷基体。还有,以如下烧成条件进行烧成:最高温度1220℃,氧分压10-10~1-10.5MPa,烧成时间3小时。
在此之后,准备含有Cu的外部电极用导电糊膏,将该外部电极用导电糊膏涂布于陶瓷基体的两端部,以800℃的温度进行烘烤处理,得到试料编号1~39的试料。
如此得到的各试料的外形尺寸为宽1.6mm,长3.2mm,厚0.85mm,存在于内部电极间的介电层的厚度为2.0μm,内部电极的厚度为0.5μm。另外,介电层的有效总数为300,每一层的相对电极面积为2.1mm2。
接着,在试料编号1~39的各试料中,使用LCR计,计测没有外加直流电压时的静电容量,和外加DC10V的直流电压时的静电容量,求得容量变化率,评价DC偏压特性。还有,容量变化率在-60%以内的,DC偏压特性判定为合格。
此外,对于各试料100个,在125℃的温度下,外加DC40V的电压并放置1500小时,进行高温负荷试验。然后,经过1500小时间用时的绝缘电阻在50kΩ以下的试料,判定为故障,计数其试料个数,评价可靠性。
表1显示,试料编号1~39所使用的第二副成分M、Al含量α、第二副成分M的含量β、相对于Al的第二副成分M的含有比率β/α、容量变化率、故障发生率。
[表1]
*为本发明范围外
试料编号29因为不含本发明的第二副成分M,而是以Mn代用,所以容量变化率为-72%,电容率的降低大,不能获得期望的DC偏压特性。
另一方面,试料编号30~39,使用本发明的第二副成分M。
但是,试料编号30、32、34、36和38,因为第二副成分M相对于Al的含有比率β/α为0.005而过少,所以容量变化率为-72~-73%,电容率的降低大,不能获得期望的DC偏压特性。
另外可知,试料编号31、33、35、37和39,含有比率β/α为0.45而过多,因此容量变化率良好,达-54~-55%,但高温负荷时的故障发生率多达11~18%,可靠性差。
相对于此,试料编号1~28含有本发明的第二副成分M,Al含量α也在本发明范围内,而且含有比率β/α为0.01~0.4,在本发明的范围内,因此能够得到容量变化率为-55~-60%的良好的DC偏压特性,而且,即使经受长时间高温负荷也没有发生故障,可确认能够得到高可靠性。
另外,如试料编号26~28所表明的可确认,如果含有比率β/α在本发明的范围内,则即使将多种第二副成分混合时,仍能够实现DC偏压特性和可靠性的并立。
实施例2
与〔实施例1〕同样,作为陶瓷原材料准备BaCO3、TiO2,规定量称量这些陶瓷原材料后,与PSZ球和纯水一起投入球磨机加以混合,进行预烧,合成由组成式Ba1.02TiO3构成的复合氧化物,将其粉碎得到主成分。
其次,作为副成分准备Al2O3、Fe2O3、CoO、NiO、CuO和ZnO、Dy2O3、MnO、SiO2。
接着,相对于主成分100摩尔份,分别称量Al2O3为0.1~3.0摩尔份(换算成Al为0.2~6.0摩尔份)、Dy2O3为1.25摩尔份(换算成Dy为2.5摩尔份)、MnO为0.5摩尔份、SiO2为1.5摩尔份,此外,使第二副成分M相对于Al的含有比率β/α为0.15,如此称量第二副成分。
然后,将这些主成分和副成分再次与PSZ球和纯水一起投入球磨机加以混合,由此得到原料粉末。
其后,通过与〔实施例1〕同样的方法、步骤,制作试料编号41~68的试料。
然后,与〔实施例1〕同样,测量容量变化率,评价DC偏压特性,进行高温负荷试验,评价可靠性。
表2显示,试料编号41~68所使用的第二副成分M、Al含量α、第二副成分M的含量β、和相对于Al的第二副成分M的含有比率β/α、容量变化率、故障发生率。
[表2]
*为本发明范围外
试料编号66~68,含有比率β/α为0.05~0.40,在本发明的范围内,但Al含量α相对于主成分100摩尔份为6.5摩尔份,过多,因此容量变化率为-70~-78%,外加10V的直流电压时的静电容量(电容率)的降低大,DC偏压特性劣化。
相对于此,试料编号41~65,Al含量α相对于主成分100摩尔份为0.2~6.0摩尔份,在本发明范围内,而且作为第二副成分M使用本发明范围内的元素,并且含有比率β/α为0.15,也在本发明的范围内,因此容量变化率为-53~-59%,能够得到良好的DC偏压特性,而且,即使经受长时间高温负荷也没有发生故障,可确认能够确保高可靠性。
实施例3
与〔实施例1〕同样,作为陶瓷原材料准备BaCO3、TiO2,规定量称量这些陶瓷原材料后,与氧化锆球一起投入球磨机加以混合,进行预烧,合成由组成式BaTiO3构成的复合化合物,将其粉碎得到主成分。
其次,准备Al2O3、NiO和SiO2,此外,准备含有作为第三副成分的R的R2O3(其中,R表示La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Y、Ho、Er、Tm、Yb和Lu。)。
接着,相对于主成分100摩尔份,分别称量Al2O3为1.2摩尔份(换算成Al为2.4摩尔份)、NiO为0.15摩尔份、R2O3为0.5~3.0摩尔份(换算成R为1.0~6.0摩尔份)、SiO2为1.2摩尔份。还有,Al和作为第二副成分的Ni的含有比率β/α为0.0625,在本发明范围内。
然后,将这些主成分和副成分再将与PSZ球和纯水一起投入球磨机加以混合,由此得到原料粉末。
其后,通过与〔实施例1〕同样的方法、步骤,制作试料编号71~91的试料。
而后,与〔实施例1〕同样,测量容量变化率,评价DC偏压特性,进行高温负荷试验,评价可靠性。
表3显示,试料编号71~91所使用的第三副成分R及其含量γ、Al含量α、Ni含量β、含有比率β/α、容量变化率和故障发生率。
[表3]
由试料编号71~91所表明的可知,如果Al含量α和含有比率β/α在本发明范围内,则作为第三副成分,使稀土类氧化物R2O3相对于主成分100摩尔份,以R换算而含有1.0~6.0摩尔份,也能够得到容量变化率为-54~-60%的良好的DC偏压特性,另外,高温负荷试验中的故障发生率也低达0~1%,能够确保期望的高可靠性。
实施例4
作为陶瓷原材料,准备BaCO3、CaCO3、SrCO3、TiO2、ZrO2、HfO2,规定量称量这些陶瓷原材料后,与PSZ球和纯水一起投入球磨机加以混合,进行预烧,如表4所示,合成以Ca和/或Sr置换了Ba的一部分的复合氧化物,再合成以Zr或Hf置换了Ti的一部分的复合氧化物,将其粉碎得到主成分粉末。
其次,准备Al2O3、Fe2O3、Dy2O3、MnO、SiO2。
接下来,相对于主成分粉末100摩尔份,分别称量Al2O3为1.0摩尔份(换算成Al为2.0摩尔份)、Fe2O3为0.15摩尔份(换算成Fe为0.3摩尔份)、Dy2O3为1.25摩尔份(换算成Dy为2.5摩尔份)、MnO为0.5摩尔份、SiO2为1.2摩尔份。还有,将Al与作为第二副成分的Fe的含有比率β/α调制为0.15,在本发明范围内。
然后,将这些主成分和副成分再次与PSZ球和纯水一起投入球磨机加以混合,由此得到原料粉末。
其后,通过与〔实施例1〕同样的方法、步骤,制作试料编号101~106的试料。
然后,与〔实施例1〕同样,测量容量变化率,评价DC偏压特性,进行高温负荷试验,评价可靠性。
表4显示,试料编号101~106的主成分组成、Al含量α、Fe含量β、含有比率β/α、容量变化率和故障发生率。
[表4]
由试料编号101~106表明的可以确认,如果Al含量α和含有比率β/α在本发明范围内,则即使以Ca和/或Sr置换Ba的一部分,或以Zr和/或Hf置换Ti的一部分,也能够得到容量变化率为-54~-57%的良好的DC偏压特性,而且,即使经受长时间高温负荷也没有发生故障,能够确保高可靠性。
实施例5
与〔实施例1〕同样,作为陶瓷原材料准备BaCO3、TiO2,规定量称量这些陶瓷原材料后,与PSZ球和纯水一起投入球磨机加以混合,进行预烧,如表5所示,合成Ba位点和Ti位点的摩尔比m不同的复合氧化物,将其粉碎而得到主成分粉末。
其次,准备Al2O3、NiO、Y2O3、SiO2、V2O5。接着,相对于主成分粉末100摩尔份,分别称量Al2O3为1.0摩尔份(换算成Al为2.0摩尔份)、NiO为0.2摩尔份、Y2O3为2.0摩尔份(换算成Y为4.0摩尔份)、SiO2を1.5摩尔份、V2O5为0.075份。
然后,将这些主成分和副成分再次与PSZ球和纯水一起投入球磨机加以混合,由此得到原料粉末。
其后,通过与〔实施例1〕同样的方法、步骤,制作试料编号111~120的试料。
然后,与〔实施例1〕同样,测量容量变化率,评价DC偏压特性,进行高温负荷试验,评价可靠性。
显示表5,试料编号111~120的Ba位点和Ti位点的摩尔比m、Al含量α、Ni含量β、含有比率β/α、容量变化率和故障发生率。
[表5]
由试料编号111~120表明的可以确认,如果Al含量α和含有比率β/α在本发明范围内,则摩尔比m在0.995~1.03的范围中即使有所不同,也能够得到容量变化率为-54~-56%的良好的DC偏压特性,而且,即使经受长时间高温负荷也没有发生故障,能够确保高可靠性。
另外,如实施例1~5表明的可知,如果Al含量和含有比率β/α在本发明范围内,则即使含有MnO、SiO2、V2O5,也可实现DC偏压特性和可靠性的并立。
产业上的可利用性
即使在外加DC偏压的环境下,也可以实现使DC偏压特性和可靠性并立的高电容率系的积层陶瓷电容器。
符号说明
1a~1g介电层
2a~2f内部电极
10陶瓷基体
Claims (10)
1.一种介电陶瓷组成物,其特征在于,以钛酸钡系复合氧化物为主成分,至少含有由Al构成的第一副成分和由从Fe、Co、Ni、Cu和Zn之中选择的1种以上的元素构成的第二副成分,
所述Al的含量相对于所述主成分100摩尔份为0.02~6摩尔份,
所述第二副成分相对于所述Al的含有比率以摩尔比计为0.01~0.4。
2.根据权利要求1所述的介电陶瓷组成物,其特征在于,含有稀土类元素。
3.根据权利要求2所述的介电陶瓷组成物,其特征在于,所述稀土类元素是从La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Y、Ho、Er、Tm、Yb和Lu之中选择的至少1种元素。
4.根据权利要求1~3中任一项所述的介电陶瓷组成物,其特征在于,构成所述主成分的Ba的一部分由Ca和Sr之中的至少任意一种置换。
5.根据权利要求1~3中任一项所述的介电陶瓷组成物,其特征在于,构成所述主成分的Ti的一部分由Zr和Hf之中的至少任意一种置换。
6.根据权利要求4所述的介电陶瓷组成物,其特征在于,构成所述主成分的Ti的一部分由Zr和Hf之中的至少任意一种置换。
7.根据权利要求1~3、6中任一项所述的介电陶瓷组成物,其特征在于,构成所述主成分的Ba位点和Ti位点的调配摩尔比为0.995~1.03。
8.根据权利要求4所述的介电陶瓷组成物,其特征在于,构成所述主成分的Ba位点和Ti位点的调配摩尔比为0.995~1.03。
9.根据权利要求5所述的介电陶瓷组成物,其特征在于,构成所述主成分的Ba位点和Ti位点的调配摩尔比为0.995~1.03。
10.一种积层陶瓷电容器,其具有介电层和内部电极被交替层叠而成的陶瓷基体,并且在该陶瓷基体的两端部形成有外部电极,该外部电极和所述内部电极被电连接,其特征在于,
所述介电层由权利要求1~9所述的介电陶瓷组成物的烧结体形成。
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JP5590224B2 (ja) * | 2011-03-25 | 2014-09-17 | 株式会社村田製作所 | 積層セラミックコンデンサおよびその製造方法 |
JP5565528B2 (ja) * | 2011-08-23 | 2014-08-06 | 株式会社村田製作所 | 積層セラミックコンデンサ、および積層セラミックコンデンサの製造方法 |
CN104395977B (zh) * | 2012-07-10 | 2017-09-15 | 株式会社村田制作所 | 层叠陶瓷电容器以及其制造方法 |
KR101650746B1 (ko) * | 2012-07-10 | 2016-08-24 | 가부시키가이샤 무라타 세이사쿠쇼 | 적층 세라믹 콘덴서 및 그 제조방법 |
KR20140020473A (ko) * | 2012-08-08 | 2014-02-19 | 삼성전기주식회사 | 적층 세라믹 전자부품 및 이의 제조방법 |
EP2762462B1 (en) * | 2013-02-04 | 2020-12-23 | NXP USA, Inc. | Method of forming a target and depositing doped dielectric films by sputtering |
US9404175B2 (en) | 2013-02-04 | 2016-08-02 | Blackberry Limited | Method of forming a target for deposition of doped dielectric films by sputtering |
KR101983171B1 (ko) * | 2014-07-07 | 2019-05-28 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
KR102183423B1 (ko) * | 2014-12-08 | 2020-11-26 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
JP6736892B2 (ja) | 2015-01-26 | 2020-08-05 | Tdk株式会社 | 薄膜キャパシタ |
JP6955847B2 (ja) * | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955846B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955848B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955849B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6945972B2 (ja) * | 2016-06-20 | 2021-10-06 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955850B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6984999B2 (ja) | 2016-06-20 | 2021-12-22 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
JP6955845B2 (ja) | 2016-06-20 | 2021-10-27 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
US11274363B2 (en) | 2019-04-22 | 2022-03-15 | Nxp Usa, Inc. | Method of forming a sputtering target |
KR20190116112A (ko) * | 2019-06-17 | 2019-10-14 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
CN116041058A (zh) * | 2023-01-09 | 2023-05-02 | 山东国瓷功能材料股份有限公司 | 一种电介质材料、其制备方法及多层片式陶瓷电容器 |
CN116230402B (zh) * | 2023-02-20 | 2024-05-17 | 江苏科技大学 | 一种中温烧结的电容器瓷料及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1326204A (zh) * | 1996-06-20 | 2001-12-12 | 株式会社村田制作所 | 使用介电陶瓷组合物的叠层陶瓷电容器 |
CN1903788A (zh) * | 2005-04-04 | 2007-01-31 | Tdk株式会社 | 电子部件、电介质陶瓷组合物及其制造方法 |
CN1983463A (zh) * | 2005-06-21 | 2007-06-20 | E.I.内穆尔杜邦公司 | 金属箔上受体掺杂的钛酸钡基薄膜电容器及其制造方法 |
CN101407417A (zh) * | 2007-09-28 | 2009-04-15 | Tdk株式会社 | 电介质陶瓷组合物及电子部件 |
CN101489953A (zh) * | 2006-07-20 | 2009-07-22 | 株式会社村田制作所 | 电介质陶瓷及其制造方法以及叠层陶瓷电容器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63265811A (ja) * | 1987-04-21 | 1988-11-02 | Ube Ind Ltd | 易焼結性ペロブスカイト系複合酸化物の原料粉末の製造法 |
JPS6469514A (en) * | 1987-09-11 | 1989-03-15 | Ube Industries | Preparation of starting powder for condenser material |
JP2958820B2 (ja) * | 1991-06-27 | 1999-10-06 | 株式会社村田製作所 | 非還元性誘電体磁器組成物 |
JP2958822B2 (ja) * | 1991-08-09 | 1999-10-06 | 株式会社村田製作所 | 非還元性誘電体磁器組成物 |
US5646081A (en) * | 1995-04-12 | 1997-07-08 | Murata Manufacturing Co., Ltd. | Non-reduced dielectric ceramic compositions |
JP3634930B2 (ja) * | 1996-10-31 | 2005-03-30 | 京セラ株式会社 | 誘電体磁器組成物 |
JP3367479B2 (ja) * | 1999-08-19 | 2003-01-14 | 株式会社村田製作所 | 誘電体セラミックおよび積層セラミック電子部品 |
JP2002187770A (ja) * | 2000-12-15 | 2002-07-05 | Toho Titanium Co Ltd | 誘電体磁器組成物及びこれを用いた積層セラミックコンデンサ |
JP4446324B2 (ja) * | 2001-09-27 | 2010-04-07 | 株式会社村田製作所 | 誘電体磁器組成物及びそれを用いたコンデンサ |
TWI275582B (en) * | 2004-08-30 | 2007-03-11 | Tdk Corp | Dielectric ceramic composition and electronic device |
JP4572628B2 (ja) * | 2004-08-30 | 2010-11-04 | Tdk株式会社 | 誘電体磁器組成物及び電子部品 |
JP4387990B2 (ja) | 2005-06-09 | 2009-12-24 | Tdk株式会社 | 誘電体磁器組成物及び電子部品 |
JP5321848B2 (ja) * | 2010-09-30 | 2013-10-23 | 株式会社村田製作所 | 誘電体セラミック及び積層セラミックコンデンサ |
US20120113562A1 (en) * | 2010-11-08 | 2012-05-10 | Samsung Electro-Mechanics Co., Ltd. | Dielectric composition having high dielectric constant, multi layered ceramic condensers comprising the same, and method of preparing for multi layered ceramic condensers |
-
2010
- 2010-07-22 CN CN201080039171.5A patent/CN102498081B/zh active Active
- 2010-07-22 WO PCT/JP2010/062302 patent/WO2011027625A1/ja active Application Filing
- 2010-07-22 JP JP2011529849A patent/JP5455164B2/ja active Active
-
2012
- 2012-02-21 US US13/400,933 patent/US8592335B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1326204A (zh) * | 1996-06-20 | 2001-12-12 | 株式会社村田制作所 | 使用介电陶瓷组合物的叠层陶瓷电容器 |
CN1903788A (zh) * | 2005-04-04 | 2007-01-31 | Tdk株式会社 | 电子部件、电介质陶瓷组合物及其制造方法 |
CN1983463A (zh) * | 2005-06-21 | 2007-06-20 | E.I.内穆尔杜邦公司 | 金属箔上受体掺杂的钛酸钡基薄膜电容器及其制造方法 |
CN101489953A (zh) * | 2006-07-20 | 2009-07-22 | 株式会社村田制作所 | 电介质陶瓷及其制造方法以及叠层陶瓷电容器 |
CN101407417A (zh) * | 2007-09-28 | 2009-04-15 | Tdk株式会社 | 电介质陶瓷组合物及电子部件 |
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