CN102452653A - 一种硅化镁的生产方法及其生产设备 - Google Patents
一种硅化镁的生产方法及其生产设备 Download PDFInfo
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- CN102452653A CN102452653A CN2011101190283A CN201110119028A CN102452653A CN 102452653 A CN102452653 A CN 102452653A CN 2011101190283 A CN2011101190283 A CN 2011101190283A CN 201110119028 A CN201110119028 A CN 201110119028A CN 102452653 A CN102452653 A CN 102452653A
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- powder
- magnesium
- magnesium silicide
- stirred reactor
- loading hopper
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- 229910021338 magnesium silicide Inorganic materials 0.000 title claims abstract description 72
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000843 powder Substances 0.000 claims abstract description 67
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 39
- 238000003756 stirring Methods 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 86
- 235000013312 flour Nutrition 0.000 claims description 43
- 239000000377 silicon dioxide Substances 0.000 claims description 43
- 230000007246 mechanism Effects 0.000 claims description 34
- 238000001816 cooling Methods 0.000 claims description 32
- 239000007789 gas Substances 0.000 claims description 27
- 238000007599 discharging Methods 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 229960005419 nitrogen Drugs 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- 239000000498 cooling water Substances 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 6
- 230000035484 reaction time Effects 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 22
- 239000000463 material Substances 0.000 abstract description 12
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 238000010924 continuous production Methods 0.000 abstract description 2
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 239000011863 silicon-based powder Substances 0.000 abstract 3
- 239000000919 ceramic Substances 0.000 abstract 1
- 238000013021 overheating Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000002194 synthesizing effect Effects 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000007323 disproportionation reaction Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 1
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- SIAPCJWMELPYOE-UHFFFAOYSA-N lithium hydride Chemical compound [LiH] SIAPCJWMELPYOE-UHFFFAOYSA-N 0.000 description 1
- 229910000103 lithium hydride Inorganic materials 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- -1 sodium aluminum hydride Chemical compound 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
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Abstract
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CN 201110119028 CN102452653B (zh) | 2011-05-10 | 2011-05-10 | 一种硅化镁的生产方法及其生产设备 |
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CN 201110119028 CN102452653B (zh) | 2011-05-10 | 2011-05-10 | 一种硅化镁的生产方法及其生产设备 |
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CN102452653A true CN102452653A (zh) | 2012-05-16 |
CN102452653B CN102452653B (zh) | 2013-07-10 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105399100A (zh) * | 2015-12-14 | 2016-03-16 | 东南大学 | 一种纳米多孔硅的制备方法 |
CN111850680A (zh) * | 2020-05-21 | 2020-10-30 | 包头美科硅能源有限公司 | 一种制备镓-硅掺杂剂的反应器及其使用方法 |
CN112694091A (zh) * | 2021-02-25 | 2021-04-23 | 刘振宇 | 一种基于芯片与智能制造的电子气体制备***及方法 |
CN113587583A (zh) * | 2021-09-27 | 2021-11-02 | 苏州锦艺新材料科技有限公司 | 硅微粉生产用双筒式处理机构 |
CN113713740A (zh) * | 2021-09-03 | 2021-11-30 | 广东厦鼎新材料科技有限公司 | 一种用于瓷砖背胶生产加工的原料上料装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004018274A (ja) * | 2002-06-12 | 2004-01-22 | Univ Shizuoka | マグネシウムシリサイドの合成方法および熱電素子モジュールの製造方法 |
CN101306818A (zh) * | 2008-07-01 | 2008-11-19 | 浙江理工大学 | 一种硅化镁的制备方法与装置 |
CN202038870U (zh) * | 2011-05-10 | 2011-11-16 | 浙江仪和岚新能源科技有限公司 | 一种硅化镁的生产设备 |
-
2011
- 2011-05-10 CN CN 201110119028 patent/CN102452653B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004018274A (ja) * | 2002-06-12 | 2004-01-22 | Univ Shizuoka | マグネシウムシリサイドの合成方法および熱電素子モジュールの製造方法 |
CN101306818A (zh) * | 2008-07-01 | 2008-11-19 | 浙江理工大学 | 一种硅化镁的制备方法与装置 |
CN202038870U (zh) * | 2011-05-10 | 2011-11-16 | 浙江仪和岚新能源科技有限公司 | 一种硅化镁的生产设备 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105399100A (zh) * | 2015-12-14 | 2016-03-16 | 东南大学 | 一种纳米多孔硅的制备方法 |
CN111850680A (zh) * | 2020-05-21 | 2020-10-30 | 包头美科硅能源有限公司 | 一种制备镓-硅掺杂剂的反应器及其使用方法 |
CN112694091A (zh) * | 2021-02-25 | 2021-04-23 | 刘振宇 | 一种基于芯片与智能制造的电子气体制备***及方法 |
CN113713740A (zh) * | 2021-09-03 | 2021-11-30 | 广东厦鼎新材料科技有限公司 | 一种用于瓷砖背胶生产加工的原料上料装置 |
CN113587583A (zh) * | 2021-09-27 | 2021-11-02 | 苏州锦艺新材料科技有限公司 | 硅微粉生产用双筒式处理机构 |
CN113587583B (zh) * | 2021-09-27 | 2022-01-25 | 苏州锦艺新材料科技有限公司 | 硅微粉生产用双筒式处理机构 |
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CN102452653B (zh) | 2013-07-10 |
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Owner name: GAO LIBO Free format text: FORMER OWNER: ZHEJIANG YIHELAN NEW ENERGY TECHNOLOGY CO., LTD. Effective date: 20141204 |
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Effective date of registration: 20141204 Address after: 311245 economic development zone, Dang Town, Xiaoshan District, Hangzhou, Zhejiang Patentee after: Gao Libo Address before: 311245 economic development zone, Dang Town, Xiaoshan District, Hangzhou, Zhejiang Patentee before: Zhejiang Yihelan New Energy Technology Co.,Ltd. |
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