CN102446861B - 利用选择性碳化硅外延来提升sonos擦写速度的方法 - Google Patents
利用选择性碳化硅外延来提升sonos擦写速度的方法 Download PDFInfo
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- CN102446861B CN102446861B CN 201010502712 CN201010502712A CN102446861B CN 102446861 B CN102446861 B CN 102446861B CN 201010502712 CN201010502712 CN 201010502712 CN 201010502712 A CN201010502712 A CN 201010502712A CN 102446861 B CN102446861 B CN 102446861B
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- silicon
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- silicon carbide
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- sonos
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- 238000000034 method Methods 0.000 title claims abstract description 60
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 46
- 238000000407 epitaxy Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 title abstract description 4
- -1 silicon oxide nitride Chemical class 0.000 title abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 48
- 239000010703 silicon Substances 0.000 claims abstract description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000011065 in-situ storage Methods 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 19
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 230000005641 tunneling Effects 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007789 gas Substances 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000014759 maintenance of location Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (7)
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CN 201010502712 CN102446861B (zh) | 2010-10-11 | 2010-10-11 | 利用选择性碳化硅外延来提升sonos擦写速度的方法 |
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CN 201010502712 CN102446861B (zh) | 2010-10-11 | 2010-10-11 | 利用选择性碳化硅外延来提升sonos擦写速度的方法 |
Publications (2)
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CN102446861A CN102446861A (zh) | 2012-05-09 |
CN102446861B true CN102446861B (zh) | 2013-10-23 |
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Families Citing this family (1)
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JP5692179B2 (ja) * | 2012-07-24 | 2015-04-01 | カシオ計算機株式会社 | システムlsi及びプログラム消去方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6586797B2 (en) * | 2001-08-30 | 2003-07-01 | Micron Technology, Inc. | Graded composition gate insulators to reduce tunneling barriers in flash memory devices |
CN1441965A (zh) * | 2000-05-10 | 2003-09-10 | 克里公司 | 碳化硅金属半导体场效应晶体管和制造碳化硅金属半导体场效应晶体管的方法 |
US6989565B1 (en) * | 2002-04-15 | 2006-01-24 | Lsi Logic Corporation | Memory device having an electron trapping layer in a high-K dielectric gate stack |
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2010
- 2010-10-11 CN CN 201010502712 patent/CN102446861B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1441965A (zh) * | 2000-05-10 | 2003-09-10 | 克里公司 | 碳化硅金属半导体场效应晶体管和制造碳化硅金属半导体场效应晶体管的方法 |
US6586797B2 (en) * | 2001-08-30 | 2003-07-01 | Micron Technology, Inc. | Graded composition gate insulators to reduce tunneling barriers in flash memory devices |
US6989565B1 (en) * | 2002-04-15 | 2006-01-24 | Lsi Logic Corporation | Memory device having an electron trapping layer in a high-K dielectric gate stack |
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CN102446861A (zh) | 2012-05-09 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131227 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131227 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |