CN102446791B - The cleaning method of substrate board treatment - Google Patents
The cleaning method of substrate board treatment Download PDFInfo
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- CN102446791B CN102446791B CN201110300209.6A CN201110300209A CN102446791B CN 102446791 B CN102446791 B CN 102446791B CN 201110300209 A CN201110300209 A CN 201110300209A CN 102446791 B CN102446791 B CN 102446791B
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- cleaning
- rpg
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- substrate board
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- 238000004140 cleaning Methods 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title claims abstract description 139
- 239000000758 substrate Substances 0.000 title claims abstract description 108
- 238000011282 treatment Methods 0.000 title claims abstract description 57
- 238000010926 purge Methods 0.000 claims abstract description 32
- 150000003254 radicals Chemical class 0.000 claims abstract description 12
- 239000007921 spray Substances 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 63
- 230000008093 supporting effect Effects 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 230000009466 transformation Effects 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000006641 stabilisation Effects 0.000 claims description 6
- 238000011105 stabilization Methods 0.000 claims description 6
- 230000002000 scavenging effect Effects 0.000 claims description 5
- 230000000630 rising effect Effects 0.000 claims description 2
- 230000001976 improved effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to a kind of substrate board treatment, particularly relate to the cleaning method to the substrate board treatment that the substrate board treatment implementing processing substrate cleans.The cleaning method of substrate board treatment of the present invention cleans clean chamber interior, it comprises: RPG cleaning step, in the remote plasma generator be connected with described process chamber, free radical is carried out to purge gas, and clean described process chamber to this purge gas of internal spray of described process chamber; Direct cleaning step, by gas supply part to process space jet cleaning gas, plasma is carried out to the purge gas being ejected into described process space simultaneously and come cleaning process room, in the cleaning method of described substrate board treatment, described RPG cleaning step and described direct cleaning step are implemented in combination.
Description
Technical field
The present invention relates to a kind of substrate board treatment, particularly relate to the cleaning method to the substrate board treatment that the substrate board treatment implementing processing substrate cleans.
Background technology
Substrate board treatment, as the device implementing the processing substrate that etching, evaporation etc. specify, generally comprises: process chamber, and it forms the process space of sealing; Gas supply part, it is arranged in process chamber, for processing gas to supply in process space; Substrate supporting portion, it is arranged in process chamber, for placing substrate.
On the other hand; substrate board treatment when repeatedly carrying out processing substrate operation, can in process chamber deposition or the particulate such as polymer piled up as accessory substance, when implementing operation; such particulate can be peeled off from the inwall of process chamber, thus causes the problem forming stains on substrate.
Therefore, substrate board treatment in the past periodically implements the matting removing the particulate be deposited in process chamber.
But, be deposited in the kind of particulate according to its material of process chamber, be deposited in the places such as the inwall of process chamber securely, when cleaning according to matting in the past, cause following problem: because fully particulate cannot be removed, processing substrate is impacted, or increases for the required time of the matting thoroughly removing particulate, thus overall activity time also increases.
Particularly; LF (Low Frequency is used at substrate board treatment in the past; low frequency) power supply is when implementing evaporation operation; with use HF (High Frequency; high frequency) power supply or VHF (Very High Frequency; very high frequency(VHF)) operation of power supply compares, and particulate can be formed in the places such as the inwall of process chamber more securely, thus there is the problem thoroughly cannot being removed particulate by cleaning method in the past.
Summary of the invention
According to the cleaning method of substrate board treatment of the present invention, combination RPG (Remote PlasmaGenerator; Remote plasma generator) cleaning and directly cleaning process chamber is cleaned, thus can the particulate of abundant Transformatin indoor.
The present invention proposes to reach object of the present invention as above, the invention provides a kind of cleaning method of substrate board treatment, the inside of process chamber is cleaned, it is characterized in that, comprise: RPG cleaning step, in the remote plasma generator be connected with described process chamber, free radical is carried out to purge gas, and clean described process chamber to this purge gas of internal spray of described process chamber; And direct cleaning step, by gas supply part to process space jet cleaning gas, plasma is carried out to the purge gas being ejected into described process space simultaneously and come cleaning process room, in the cleaning method of described substrate board treatment, described RPG cleaning step and described direct cleaning step are implemented in combination.
In preferred version, accessory substance removal step is implemented after at least one step after described RPG cleaning step and after described direct cleaning step, in this accessory substance removal step, to described process space supply purge gas, and removed the accessory substance produced in the inside of described process chamber by blast pipe.
In preferred version, before described RPG cleaning step, implement stabilization step, this stabilization step sprays inert gas by described gas supply part to described process space.
In preferred version, the arbitrary step in described RPG cleaning step and described direct cleaning step or this two kinds of steps implement when changing the pressure of described inner treatment chamber.
In preferred version, arbitrary step in described RPG cleaning step and described direct cleaning step or this two kinds of steps all combine level pressure step and transformation step is implemented, in described level pressure step, the internal pressure maintaining described process chamber is that authorized pressure cleans, in described transformation step, the internal pressure changing described process chamber is cleaned.
In preferred version, after described RPG cleaning step, before the described direct cleaning step of enforcement, implement pressure drop step, in this pressure drop step, reduce the pressure of described inner treatment chamber.
In preferred version, in described direct cleaning step, implemented by the substrate supporting portion of rising supporting substrates.
In preferred version, described substrate board treatment implements evaporation operation by using LF power supply on the surface of substrate.
In preferred version, described substrate is solar cell substrate.
In preferred version, described substrate board treatment implements processing substrate while the tray conveying by being mounted with multiple substrate; When implementing described RPG cleaning step and described direct cleaning step, described pallet cleans with the state be loaded in substrate supporting portion.
In preferred version, described RPG cleaning step and described direct cleaning step are implemented once respectively.
In preferred version, implement with the order of described RPG cleaning step, described direct cleaning step and described RPG cleaning step, or implement with the order of described direct cleaning step, described RPG cleaning step and described direct cleaning step.
In preferred version, described RPG cleaning step and described direct cleaning step, in whole scavenging period, are implemented within all or part of time simultaneously; Or described RPG cleaning step and described direct cleaning step, in whole scavenging period, are alternately implemented mutually.
According to the cleaning method of substrate board treatment of the present invention, RPG is utilized to clean the internal implementation RPG of process chamber, and, clean afterwards at RPG or side by side combine with RPG cleaning process and implement direct cleaning process, thus can the particulate of abundant Transformatin indoor, in described direct cleaning process, in process chamber, apply power supply form plasma in process space, thus the inside of process chamber is cleaned.
Particularly, according to the cleaning method of substrate board treatment of the present invention, when being deposited in the inwall of process chamber etc. securely when particulate and forming such as SiN layer as when using the evaporation operation of LF power supply, by first implementing RPG cleaning, then implement separately directly to clean, or implement together with cleaning with RPG directly to clean, can effectively remove the particulate be deposited in process chamber.
Accompanying drawing explanation
Fig. 1 is the cutaway view of substrate board treatment one example representing the cleaning method applying substrate board treatment of the present invention.
Fig. 2 is the flow chart of the cleaning method representing substrate board treatment of the present invention.
Fig. 3 is the curve chart of the cleaning process of the cleaning method of the substrate board treatment representing Fig. 2.
(description of reference numerals)
110 process chambers
130 substrate supporting portions
150 gas supply parts
160 remote plasma generator
Embodiment
Below, the cleaning method according to substrate board treatment of the present invention is described in detail by referring to accompanying drawing.
Fig. 1 is the cutaway view of substrate board treatment one example representing the cleaning method applying substrate board treatment of the present invention.
First, apply the substrate board treatment of the cleaning method of substrate board treatment of the present invention, it is the device implementing the processing substrate such as evaporation operation, etching work procedure, particularly implement to use LF power supply the surface of substrate to be carried out to the device of the evaporation operation of evaporation, it can have various structure, and simple example is illustrated as described below.
As shown in Figure 1, as an example of aforesaid substrate processing unit, comprising: process chamber 110, its formation processing space S; Gas supply part 150, it is arranged on process chamber 110, for process space S supply gas; Substrate supporting portion 130, it is arranged on process chamber 110, for supporting substrates 10.Wherein, can to illustrate LCD glass substrate, semiconductor wafer and solar cell substrate etc. as the substrate 10 of processing substrate object.
Above-mentioned process chamber 110, for the formation of process space S, can form various structure, as shown in Figure 1, comprise: chamber bodies 112, open on the upside of it, and is formed with more than one door 101,102; Upper cover 111, it combines with chamber bodies 112 dismantledly.
Above-mentioned gas supply unit 150, in order to implement operation, is arranged on the upside of process space S, to the supply of process space S, can form various structure according to operation and gas supply mode for coming from gas supply device 170 receiver gases.
Aforesaid substrate support 130, for supporting substrates 10, can possess various structure according to design condition and process conditions.Now, when multiple substrate 10 is loaded into transfer on pallet 20, substrate supporting portion 130 can supporting tray 20.
Further, aforesaid substrate support 130, in order to implement operation, is provided with the heater for heated substrates 10, also may only be made up of heater.Now, the heater forming substrate supporting portion 130 is formed with integral manner, or splits setting by multiple heater.
On the other hand, aforesaid substrate processing unit applies power supply to implement operation, in the case, apply mode according to its power supply and form various structure, as an example, apply RF (Radio Freqency, radio frequency) power supply or LF power supply forms top power supply at above-mentioned gas supply unit 150, ground connection is carried out to form lower electric power to substrate supporting portion 130.
Further, aforesaid substrate processing unit comprises remote plasma generator (Remote PlasmaGenerator; RPG) 160, this remote plasma generator 160 is connected with gas supply part 150, thus realize carrying out free radical (radical) to the purge gas be supplied to from gas supply device 170, and sprayed to process space S by gas supply part 150.
The Reference numeral 180 be not described in FIG refers to the blast pipe be connected with vacuum pump.
Fig. 2 is the flow chart of the cleaning method representing substrate board treatment of the present invention, and Fig. 3 is the curve chart of the cleaning process of the cleaning method of the substrate board treatment representing Fig. 2.
According to the cleaning method of substrate board treatment of the present invention as shown in Figure 2, to the cleaning method of the substrate board treatment that the inside of process chamber 110 is cleaned, comprise the steps: RPG cleaning step S10, in the remote plasma generator 160 be connected with above-mentioned process chamber 110, carry out free radical (radical) to purge gas change, and clean above-mentioned process chamber 110 to the internal spray of above-mentioned process chamber 110; Direct cleaning step S20, in the process implementing RPG cleaning step S10 or after having implemented RPG cleaning step S10, by gas supply part 150 to process space S jet cleaning gas, plasma is carried out to the purge gas being ejected into process space S simultaneously and come cleaning process room 110.
Above-mentioned RPG cleaning step S10, as first time matting, utilizes remote plasma generator 160 to carry out free radical to purge gas, and by the gas supply part 150 as spray head, jet cleaning gas in process space S.Wherein, purge gas comprises fluorine or chlorine, except NF
3outside, can also C be comprised
2f
6, CF
4, F
2, CHF
3, SF
6and Cl
2deng.
On the other hand, before carrying out above-mentioned RPG cleaning step S10, in order to implement stable matting to substrate board treatment, stabilization step S11 can also be implemented, in this stabilization step S11, by the internal spray inert gas of gas supply part 150 to process chamber 110.
The object implementing aforementioned stable step S11 is to carry out the adjustment of the internal pressure of process chamber 110, the discharge etc. of residual gas at enforcement RPG cleaning step S10 and directly before cleaning S20, inject to process chamber 110 inside not to process chamber 110 have an impact as inert gases such as Ar.Now, as shown in Figure 3, in aforementioned stable step S11, the internal pressure of process chamber 110 is made at leisure from the following pressure increase of 1.0Torr (holder) to the pressure of tens of Torr.
Above-mentioned RPG cleaning step S10 is the step utilizing remote plasma to implement first time matting, carries out free radical by remote plasma apparatus 160 pairs of purge gass, and sprays to process space S.Wherein, above-mentioned purge gas sprays the pressure for making the internal pressure of process chamber 110 maintain tens of Torr, and can mix with the inert gas such as such as Ar and spray.
On the other hand, preferably as shown in Figures 2 and 3, above-mentioned RPG cleaning step S10 implements while the internal pressure changing process chamber 110.
That is, while above-mentioned RPG cleaning step S10 changes the internal pressure of process chamber 110 in units of the several seconds, the purge gas to the internal spray free radical of process chamber 110 is implemented.Wherein, the internal pressure of process chamber 110 can be passed through to the emitted dose (sccm unit) of the purge gas of sprayed free radical or by carrying out the various method such as regulating to change to the air displacement of blast pipe.
If change the internal pressure of process chamber 110 when stating RPG cleaning step S10 on the implementation, then the purge gas of free radical can penetrate into the deep inside of process chamber 110, thus can increase cleaning performance.
And, for above-mentioned RPG cleaning step S10, compared with implementing via the overall time with by the internal pressure of process chamber 110, preferably level pressure step and transformation step are implemented in combination, in above-mentioned level pressure step, the parts etc. that the internal pressure maintaining the process chamber 110 of regulation is come near to gas supply part 150, gas supply part 150 implement cleaning, in above-mentioned transformation step, in order to clean the parts such as chamber bodies 112 grade of the process chamber 110 away from gas supply part 150, cleaned by the internal pressure changing process chamber 110.
Above-mentioned level pressure step and transformation step can be implemented according to various combination, such as, can only implement once respectively, or change its order implement repeatedly.
When stating direct cleaning step S20 on the implementation, implement under counting Torr pressure in the internal pressure of process chamber 110, now can implement the pressure drop step S13 for reducing pressure, so that direct cleaning step S20 can be implemented after RPG cleaning step S10.
Above-mentioned pressure drop step S13 is implemented by the emitted dose (sccm unit) reducing purge gas, and the internal pressure of process chamber 110 is declined, till reaching several Torr pressure.
Above-mentioned direct cleaning step S20 is the step of the second time matting be implemented as follows: by gas supply part 150 jet cleaning gas, and apply power supply at substrate board treatment, namely, LF power supply is applied at gas supply part 150, ground connection is carried out to process chamber 110 and substrate supporting portion 130, between gas supply part 150 and substrate supporting portion 130, forms plasma thus.
As shown in Figure 3, in above-mentioned direct cleaning step S20, preferably in stably implementing matting, in units of the several seconds, the power supply size of applying is increased at leisure.
Further, the enforcement time of above-mentioned direct cleaning step S20 is several minutes, and its pressure maintains several about Torr.
Further, purge gas required when stating direct cleaning step S20 on the implementation, can use the gas identical with the purge gas used in RPG cleaning step S10.
On the other hand, at above-mentioned direct cleaning step S20, risen by the substrate supporting portion 130 being used in supporting substrates 10 and implement this direct cleaning step S20.
Particularly, if when stating direct cleaning step S20 on the implementation, make substrate supporting portion 130 increase, then can strengthen the intensity of plasma, and then can cleaning performance be improved.
And, when implementing processing substrate while aforesaid substrate processing unit passes through the pallet 20 being mounted with multiple substrate 10 to transfer, when implementing RPG cleaning step S10 and direct cleaning step S20, pallet 20 cleans with the state be loaded in substrate supporting portion 130.
As mentioned above, if when carrying out the matting of substrate board treatment, if pallet 20 is also cleaned simultaneously, then can make the particulate because being attached on pallet 20 and the impact caused minimizes, thus better processing substrate can be implemented, further, reduce the cleaning frequency being used for cleaning trays 20 self, thus the overall time of processing substrate can be extended.
On the other hand, after above-mentioned direct cleaning step S20, implement accessory substance removal step S30, in this accessory substance removal step S30, to the supply of process space S as the purge gas (purge gas) of inert gas, when removing implement RPG cleaning step S10 and direct cleaning step S20 by blast pipe 180, produce the accessory substance in the inside of process chamber 110.
Although above-mentioned accessory substance removal step S30 implements after direct cleaning step S20 in the example shown, can certainly implement after at least some steps in RPG cleaning step S10 and direct cleaning step S20.
On the other hand, the invention is characterized in, combination is implemented RPG cleaning and is directly cleaned, and thus its order and number of times can combine enforcement by various mode.
That is, above-mentioned RPG cleaning step S10 and direct cleaning step S20 can implement once respectively.
Further, can implement with the order of above-mentioned RPG cleaning step S10, directly cleaning step S20 and RPG cleaning step S10, or can implement with the order of direct cleaning step S20, RPG cleaning step S10 and direct cleaning step S20.
And, above-mentioned RPG cleaning step S10 and directly cleaning step S20, can be implemented by following various combinations: in the Integral cleaning time, implement within all or part of time simultaneously, or above-mentioned RPG cleaning step S10 and directly cleaning step S20, within the Integral cleaning time, alternately implement mutually.
As mentioned above, when combining above-mentioned RPG cleaning step S10 and directly cleaning step S20 implements matting to process chamber 110, owing to being mutually combined with to the RPG cleaning performance of inducing deposit to chap favourable with to peeling off the favourable direct cleaning performance of the deposit be deposited on each parts, thus there is the advantage more effectively can removing the deposit be deposited in process chamber 110.
Namely, if combine above-mentioned RPG cleaning step S10 and direct cleaning step S20, the scavenging period of process chamber 110 can not only be shortened, and the removal effect for deposit can also be improved, thus the reliability of operation in the process chamber 110 after to matting can be improved.
Particularly, the sensitive surface in order to be formed in solar cell device is formed as SiN
xdiaphragms such as film and when implementing evaporation operation, the surface of gas supply part 150, process chamber 110 and various parts also being formed by SiN
xthe firm deposit that film is formed.
But, if combine above-mentioned RPG cleaning step S10 and direct cleaning step S20, just can effectively remove as SiN
xthe firm deposit of film, should as SiN
xthe firm deposit of film is in order to be formed as SiN
xthe diaphragm of film and being formed in the evaporation operation implemented.
On the other hand, above-mentioned direct cleaning step S20 can also change process chamber 110 above similarly internal pressure with illustrated RPG cleaning step S10 is implemented, such as, can be implemented by the combination of once above level pressure step and transformation step.
As mentioned above, change internal pressure to implement in above-mentioned direct cleaning step S20 or RPG cleaning step S10, the reason such as implemented by the combination of once above level pressure step and transformation step is as described below.
First, in gas supply part 150 situation, because it directly exposes in purge gas, even without pressure change, also effectively remove deposit by direct cleaning step S20 or RPG cleaning step S10.
But, for the various parts at the places such as the chamber bodies 112 of process chamber 110, the side being arranged at chamber bodies 112 and bottom surface, then because of outstanding part or the flowing that may block or hamper purge gas because of miscellaneous part, thus there is the problem that can not get cleaning smoothly for described parts.
But, if change internal pressure in above-mentioned direct cleaning step S20 or RPG cleaning step S10, then can change in the flowing of purge gas, make purge gas arrive the outstanding part in the various parts at the places such as chamber bodies 112, the side being arranged at chamber bodies 112 and bottom surface or cause the flowing of purge gas to be blocked or hinder because of miscellaneous part part till, thus successfully can implement cleaning.
Below only to can according to the present invention realize preferred embodiment with a portion of explanation, can not be interpreted as scope of the present invention and be defined in above-described embodiment, the technological thought of the present invention that should be considered as above illustrating includes within the scope of the invention with the technological thought based on purport of the present invention.
Claims (12)
1. a cleaning method for substrate board treatment, cleans the inside of process chamber, it is characterized in that, comprising:
RPG cleaning step, carries out free radical to purge gas in the remote plasma generator be connected with described process chamber, and cleans described process chamber to this purge gas of internal spray of described process chamber; And
Direct cleaning step, by gas supply part to process space jet cleaning gas, carries out plasma to described substrate board treatment applying power supply to the purge gas being ejected into described process space simultaneously and comes cleaning process room,
In the cleaning method of described substrate board treatment, described RPG cleaning step and described direct cleaning step are implemented in combination;
Described RPG cleaning step and described direct cleaning step are all implement when changing the pressure of described inner treatment chamber, thus make purge gas arrive the place of its processed chamber component obstruction.
2. the cleaning method of substrate board treatment according to claim 1, it is characterized in that, accessory substance removal step is implemented after at least one step after described RPG cleaning step and after described direct cleaning step, in this accessory substance removal step, to described process space supply purge gas, and removed the accessory substance produced in the inside of described process chamber by blast pipe.
3. the cleaning method of substrate board treatment according to claim 1, is characterized in that, before described RPG cleaning step, implement stabilization step, in this stabilization step, sprays inert gas by described gas supply part to described process space.
4. the cleaning method of substrate board treatment according to any one of claim 1 to 3, it is characterized in that, arbitrary step in described RPG cleaning step and described direct cleaning step or this two kinds of steps all combine level pressure step and transformation step is implemented, in described level pressure step, the internal pressure maintaining described process chamber is that authorized pressure cleans, in described transformation step, the internal pressure changing described process chamber is cleaned.
5. the cleaning method of substrate board treatment according to any one of claim 1 to 3, it is characterized in that, after described RPG cleaning step, before the described direct cleaning step of enforcement, implement pressure drop step, in this pressure drop step, reduce the pressure of described inner treatment chamber.
6. the cleaning method of substrate board treatment according to any one of claim 1 to 3, is characterized in that, in described direct cleaning step, is implemented by the substrate supporting portion of rising supporting substrates.
7. the cleaning method of substrate board treatment according to any one of claim 1 to 3, is characterized in that, described substrate board treatment implements evaporation operation by using low-frequency power on the surface of substrate.
8. the cleaning method of substrate board treatment according to any one of claim 1 to 3, is characterized in that, described substrate is solar cell substrate.
9. the cleaning method of substrate board treatment according to any one of claim 1 to 3, is characterized in that,
Described substrate board treatment implements processing substrate while the tray conveying by being mounted with multiple substrate;
When implementing described RPG cleaning step and described direct cleaning step, described pallet cleans with the state be loaded in substrate supporting portion.
10. the cleaning method of substrate board treatment according to any one of claim 1 to 3, is characterized in that, described RPG cleaning step and described direct cleaning step are implemented once respectively.
The cleaning method of 11. substrate board treatments according to any one of claim 1 to 3, it is characterized in that, implement with the order of described RPG cleaning step, described direct cleaning step and described RPG cleaning step, or implement with the order of described direct cleaning step, described RPG cleaning step and described direct cleaning step.
The cleaning method of the substrate board treatment according to any one of 12. claims 1 to 3, is characterized in that,
Described RPG cleaning step and described direct cleaning step, in whole scavenging period, are implemented within all or part of time simultaneously; Or
Described RPG cleaning step and described direct cleaning step, in whole scavenging period, are alternately implemented mutually.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0095818 | 2010-10-01 | ||
| KR1020100095818A KR20120034341A (en) | 2010-10-01 | 2010-10-01 | Cleaning method for substrate processing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102446791A CN102446791A (en) | 2012-05-09 |
| CN102446791B true CN102446791B (en) | 2015-11-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110300209.6A Expired - Fee Related CN102446791B (en) | 2010-10-01 | 2011-09-29 | The cleaning method of substrate board treatment |
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|---|---|
| KR (1) | KR20120034341A (en) |
| CN (1) | CN102446791B (en) |
| TW (1) | TWI460028B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103374710B (en) * | 2012-04-28 | 2015-12-16 | 理想能源设备(上海)有限公司 | The purging method of reaction chamber, the cleaning system of reaction chamber |
| KR101379701B1 (en) * | 2012-11-28 | 2014-04-01 | 한국표준과학연구원 | Substrate processing apparatus and substrate processing method |
| KR102038647B1 (en) * | 2013-06-21 | 2019-10-30 | 주식회사 원익아이피에스 | Substrate support apparatus and substrate process apparatus having the same |
| CN103406308A (en) * | 2013-08-15 | 2013-11-27 | 湖南神舟科技股份有限公司 | Secondary dedusting device for nickel hydrogen power battery positive plate |
| KR101796627B1 (en) * | 2013-08-28 | 2017-11-10 | 에이피시스템 주식회사 | Exhaust system and substrate processing apparatus having the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201221235A (en) | 2012-06-01 |
| CN102446791A (en) | 2012-05-09 |
| KR20120034341A (en) | 2012-04-12 |
| TWI460028B (en) | 2014-11-11 |
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