CN102445711B - THz-wave detector - Google Patents
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- CN102445711B CN102445711B CN 201010297633 CN201010297633A CN102445711B CN 102445711 B CN102445711 B CN 102445711B CN 201010297633 CN201010297633 CN 201010297633 CN 201010297633 A CN201010297633 A CN 201010297633A CN 102445711 B CN102445711 B CN 102445711B
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Abstract
The invention discloses a THz-wave detector, which uses a high-electron-mobility field effect transistor (FET) with higher two-dimensional electron concentration as a basic structure unit, wherein the FET is provided with a source electrode, a gate electrode and a drain electrode. The THz-wave detector is characterized in that the device structure of the THz-wave detector comprises three lead electrodes, three low pass filters and a group of THz-wave coupled antennas, wherein the three electrodes of the FET and the THz-wave coupled antennas are connected to jointly serve as antennas; and the three electrodes of the FET are respectively connected with the corresponding lead electrodes through the low pass filters. The THz-wave detector has the advantages that the antennas are separated from the lead electrodes through the low pass filters, so the resonance performance of the antennas can be guaranteed, and the decrease of the device responsivity, which is caused by the leakage of high frequency THz-wave signals produced by the antennas to the lead electrodes through straight conducting wires, is prevented; and an ohmic contact is simultaneously provided with the source electrode, the drain electrode and the antennas, so the device structure is compact, the integration is facilitated, and a foundation is laid for the realization of the arraying and large-scale application of the THz-wave detector.
Description
Technical field
The present invention relates to a kind of wave spectrum sniffer, relate in particular to a kind of wave spectrum sniffer of at ambient temperature the THz ripple being realized high speed, high sensitivity, high s/n ratio detection, belong to THz wave detection study technical field.
Background technology
Terahertz (Terahertz, THz) radiation is the general designation to the electromagnetic radiation of a specific band, typically refer to frequency 0.1THz～10THz (electromagnetic wave of wavelength in the scope of 3mm～30um), it in electromagnetic wave spectrum between microwave and infrared radiation.In person in electronics, the electromagnetic wave of this wave band is known as again millimeter wave and submillimeter wave; And in field of spectroscopy, it is also referred to as far infrared.
Why terahertz emission causes our keen interest, is because it has the character of a lot of uniquenesses and application prospect widely.Terahertz radiation source has: the characteristics such as wideband, perspectivity, security, so it is at basic fields such as physics, chemistry, biomedicines, and the identification of anti-terrorism, counterfeit money, there are noninvasive imaging, safety inspection, spectral analysis and radar communication aspect that important application prospect is arranged.
The same with the terahertz emission source, terahertz detection also is another gordian technique in the Terahertz science and technology, also is that Terahertz Technology is used another key link of putting into practical application.Because the radiation power of Terahertz light source is generally all lower at present, and existing terahertz wave detector generally has response speed slow (such as pyroelectric detector), look-in frequency narrow (such as schottky diode), poor sensitivity (such as Golay detector Golay cell) and need the shortcoming of low-temperature working (such as bolometer), thus develop a kind of high speed, high sensitivity, high noise and the terahertz wave detector that can work at ambient temperature particularly important.
Dyakonov and Shur at first explained field effect transistor applying plasma Wave instability with the shallow-water wave model theoretically in 1993, drew that field effect transistor applying plasma ripple can give off the THz ripple under certain boundary condition.They find that in 1996 the Instability Theory of two-dimensional electron gas (2DEG) can be applied to the detection of THz ripple, and from experimentally having realized the detection to THz wave, but this class device generally needs work at low temperatures, and sensitivity is lower, and noise ratio is larger.
Summary of the invention
Defective in view of above-mentioned prior art existence, the objective of the invention is to propose a kind of take high electron mobility field-effect transistor (HEMT) as basic structure, be aided with integrated special bowtie (butterfly) antenna and the terahertz wave detector of low-pass filter, the final detection that realizes at ambient temperature THz wave height speed, high sensitivity, high noise.
Above-mentioned purpose of the present invention will be achieved by the following technical programs:
A kind of terahertz wave detector, comprise lens, detecting element, signal amplifier and power supply, described detecting element is take high electron mobility field-effect transistor with higher two-dimentional electron concentration as basic structural unit, and described field effect transistor has source electrode, gate electrode and drain electrode, it is characterized in that: the detecting element structure of described terahertz wave detector comprises three lead-in wires electrode, three low-pass filters and one group of THz wave coupled antenna, three electrodes of described field effect transistor link to each other with the THz wave coupled antenna, jointly as antenna; And described three electrodes are continuous with corresponding lead-in wire electrode by low-pass filter respectively.
Further, described high electron mobility field-effect transistor comprises that at least aluminum gallium nitride/gallium nitrogen transistor and gallium aluminium arsenic/gallium arsenic transistor etc. have a kind of in the transistor of higher two-dimensional electron gas.
Above-mentioned purpose of the present invention is to prepare by the following technical programs realization:
(1) at first the material with higher two-dimentional electron concentration is carried out surface clean, and obtain prefabricated film by laser scribing;
(2) use ultraviolet photolithographic method and plasma etching method, etch the active area table top at prefabricated film, comprise Two-dimensional electron gas channel, Ohmic contact zone and ultraviolet photolithographic mark;
(3) use the atomic layer deposition method, at the insulated gate medium of whole prefabricated film superficial growth one deck alundum (Al2O3), described prefabricated film surface includes the source region table top;
(4) utilize ultraviolet photolithographic and wet etching to prepare the Ohmic contact window in the Ohmic contact zone;
(5) utilize electron-beam vapor deposition method and lift-off stripping technology to prepare source, drain electrode, and make source, drain electrode form Ohmic contact through high annealing;
(6) prepare antenna structure by ultraviolet photolithographic, electron beam evaporation and lift-off stripping technology successively; Prepare the nanometer gate electrode by beamwriter lithography, electron beam evaporation and lift-off stripping technology; And add thick electrode by ultraviolet photolithographic, electron beam evaporation and the preparation of lift-off stripping technology;
(7) adopt semiconductor packaging, the finished product of step (6) is encapsulated.
Implement technical scheme of the present invention, its innovation advantage applies exists:
1, by low-pass filter antenna is followed the lead-in wire electrode isolation, can guarantee the resonance performance of antenna, can stop the high frequency THz ripple signal that is produced by antenna to leak the decline that causes the response device degree by straight wire to the lead-in wire electrode;
2, overcome owing to the impact on result of detection of the low frequency signal that produces of resonance effect of lead-in wire electrode, thereby improved detector sensitivity;
3, Ohmic contact is source, drain electrode and antenna structure simultaneously so that component compact, be convenient to integrated, for array and the large-scale application that realizes terahertz wave detector lays the foundation.
Description of drawings
Fig. 1 is the structure front elevational schematic of terahertz wave detector one embodiment detecting element of the present invention;
Fig. 2 is the structure schematic side view of detecting element shown in Figure 1;
Fig. 3 is the Experimental equipment of terahertz wave detector of the present invention;
Fig. 4 is that terahertz wave detector of the present invention is the electromagnetic photocurrent response figure of 903GHz to frequency under room temperature and liquid nitrogen temperature;
Fig. 5 is the power response degree figure of terahertz wave detector of the present invention under room temperature and liquid nitrogen temperature;
Fig. 6 be in the terahertz wave detector of the present invention antenna and THz wave polarised direction concern synoptic diagram.
The implication of each mark is in the diagram:
1～lead-in wire electrode, 2～low-pass filter, 3～THz wave coupled antenna, 4～source electrode, 5～drain electrode, 6～gate electrode, 7～active area table top, 8～Er Weidianziqi ﹠amp; 2DEG, 9～Sapphire Substrate
Embodiment
Following constipation closes the embodiment accompanying drawing, the specific embodiment of the present invention is described in further detail, so that technical solution of the present invention is easier to understand, grasp.
The experiment Structure Understanding of conventional terahertz wave detector, as shown in Figure 3, the common detector includes lens (off-axis aspheric mirror), detecting element, signal amplifier and power supply etc., wherein detecting element is take high electron mobility field-effect transistor with higher two-dimentional electron concentration as basic structural unit, and field effect transistor has three electrodes, is respectively source electrode, gate electrode and drain electrode.Designer of the present invention is for defective and the key to the issue of traditional GaN/AlGaN HEMT high sensitivity terahertz detector in the background technology, and through repeatedly studying and testing, innovation has proposed the organization plan for detecting element.Specifically as depicted in figs. 1 and 2:
The detecting element structure of described terahertz wave detector comprises three lead-in wire electrodes, three low-pass filters 2 and one group of THz wave coupled antenna 3 (hereinafter to be referred as antenna), three electrodes of field effect transistor link to each other with the THz wave coupled antenna, jointly as antenna; And three electrodes 4,5,6 link to each other with corresponding lead-in wire electrode 1 by a low-pass filter respectively.Wherein this field effect transistor is High Electron Mobility Transistor, has higher two-dimensional electron gas, optionally comprises a kind of in other transistors such as aluminum gallium nitride/gallium nitrogen transistor and gallium aluminium arsenic/gallium arsenic transistor.As shown in Figure 2, it also comprises active area table top 7 and the two-dimensional electron gas (2DEG) 8 of the preparation of Sapphire Substrate 9 surface-ripe techniques.
Low-pass filter in a kind of terahertz wave detector of the present invention both can replace straight wire to connect source, drain electrode and lead-in wire electrode, can play again the effect of filtering, namely get rid of the interference that detector is subject to other low frequency signals, guarantee the resonance performance of antenna in the device, be that electromagnetic wave about 1THz is accurately surveyed to frequency, thereby improve detector sensitivity and signal to noise ratio (S/N ratio).
From the method for making of terahertz wave detector of the present invention, it comprises step:
(1) at first the material with higher two-dimentional electron concentration is carried out surface clean, and to make the length of side by laser scribing is 1.5 centimetres prefabricated film;
(2) use ultraviolet photolithographic method and plasma etching method, etch the active area table top at prefabricated film, comprise Two-dimensional electron gas channel, Ohmic contact zone and ultraviolet photolithographic mark;
(3) use the atomic layer deposition method, be about the gate medium of the alundum (Al2O3) of 10 nanometers in whole prefabricated film surface (including the source region table top) growth a layer thickness;
(4) utilize ultraviolet photolithographic and wet etching to prepare the Ohmic contact window in the Ohmic contact zone;
(5) utilize electron-beam vapor deposition method and lift-off stripping technology to prepare source, drain electrode, and high annealing make source, drain electrode form Ohmic contact; Spacing between above-mentioned source electrode and the drain electrode is very little to be about 3 microns, and grid length is 700 nanometers.
(6) prepare antenna structure Ni/Au (20/80nm) by ultraviolet photolithographic, electron beam evaporation and lift-off stripping technology successively; Prepare the nanometer gate electrode by beamwriter lithography, electron beam evaporation and lift-off stripping technology; And add thick electrode by ultraviolet photolithographic, electron beam evaporation and the preparation of lift-off stripping technology;
(7) adopt semiconductor packaging, the finished product of step (6) is encapsulated.
In the process of above-mentioned preparation detector, by a little adjustment of preparation process, can make this terahertz wave detector satisfy different working mechanisms.
When grid, when the source electrode separation is larger, it is surveyed mechanism and satisfies the self-mixing theory.Under the irradiation of THz wave, because antenna is followed the polarised direction relevant (as shown in Figure 6) of electric field to the response of THz ripple, impinge perpendicularly on the front of detector when THz wave, and when the long limit of antenna was parallel with direction of an electric field, the responsiveness of antenna was maximum, and the photocurrent that obtains is maximum, impinge perpendicularly on the front of detector when THz wave, and when the long limit of antenna was vertical with direction of an electric field, the responsiveness of antenna was minimum, and the photocurrent that obtains is minimum.Because the coupling of antenna, can be simultaneously in raceway groove the two dimensional electron gas place induce the electric field of horizontal direction (being parallel to raceway groove) and vertical direction (perpendicular to raceway groove), that is: E
xAnd E
zAnd the intensity of induction field can reach the hundred times of incident THz wave electric field intensity, by regulating gate electrode voltage and then the concentration of two-dimensional electron gas in the raceway groove being regulated and control, near threshold voltage, the electric field of level side and the electric field generation mixing of vertical direction in the raceway groove, namely exportable direct current photocurrent namely
Wherein g is the differential conductance of device, V
gBe added grid voltage, V
xAnd V
zBe respectively and be parallel to raceway groove and perpendicular to the induced voltage of raceway groove, φ is E
xAnd E
zPhase differential.
When grid, source electrode separation and grid length hour, and gate electrode is with respect to the source, when drain electrode is asymmetric, it is surveyed the shallow-water wave that mechanism satisfies plasma wave and surveys theoretical.If gate electrode is made asymmetric structure, namely the spacing between grid, the source electrode is not equal to the spacing between grid, the drain electrode, and reduces the length to 10 of gate electrode
2Nanometer scale, then under the radiation of THz wave, can inspire plasma wave, because the asymmetry of device architecture, (be constant bias direct current voltage in addition between grid, the source electrode under certain boundary condition, and constant bias direct current electric current in addition between source, drain electrode), because the plasma Wave instability just can produce the direct current photovoltage, satisfy the shallow-water wave of plasma wave and survey theoretical.
No matter survey mechanism and satisfy which kind of theory, terahertz wave detector at room temperature can both well be surveyed the THz ripple among the present invention, and its photocurrent, noise constant power and responsiveness are respectively: 1.2nA,
And 37mA/W, Effect on Detecting is better under liquid nitrogen temperature, as shown in Figure 4 and Figure 5.
We can see under room temperature and low temperature from Fig. 4, and photocurrent is as the function of grid voltage, and reach maximal value near threshold voltage, because the derivative of device differential conductance is maximum near threshold voltage, this is better with the self-mixing theory-compliant.Fig. 5 is the power corresponding figures of this device under 300K and 77K, and as can be seen from the figure the responsiveness of device has been increased to 462mA/W under liquid nitrogen temperature, and the noise constant power has dropped to
This mainly be since under the low temperature mobility of electronics increase and to cause.
Claims (3)
1. terahertz wave detector, comprise lens, detecting element, signal amplifier and power supply, described detecting element is take high electron mobility field-effect transistor with higher two-dimentional electron concentration as basic structural unit, and described field effect transistor has source electrode, gate electrode and drain electrode, it is characterized in that: the detecting element structure of described terahertz wave detector comprises three lead-in wires electrode, three low-pass filters and one group of THz wave coupled antenna, three electrodes of described field effect transistor link to each other with the THz wave coupled antenna, jointly as antenna; And described three electrodes respectively by in described three low-pass filters corresponding one link to each other with corresponding lead-in wire electrode.
2. a kind of terahertz wave detector according to claim 1, it is characterized in that: described high electron mobility field-effect transistor is the transistor with higher two-dimensional electron gas, comprises at least a kind of in aluminum gallium nitride/gallium nitrogen transistor and the gallium aluminium arsenic/gallium arsenic transistor.
3. the preparation method of the described a kind of terahertz wave detector of claim 1 is characterized in that comprising the steps:
(1) at first the material with higher two-dimentional electron concentration is carried out surface clean, and obtain prefabricated film by laser scribing;
(2) use ultraviolet photolithographic method and plasma etching method, etch the active area table top at prefabricated film, comprise Two-dimensional electron gas channel, Ohmic contact zone and ultraviolet photolithographic mark;
(3) use the atomic layer deposition method, at the insulated gate medium of whole prefabricated film superficial growth one deck alundum (Al2O3), described prefabricated film surface includes the source region table top;
(4) utilize ultraviolet photolithographic and wet etching to prepare the Ohmic contact window in the Ohmic contact zone;
(5) utilize electron-beam vapor deposition method and lift-off stripping technology to prepare source, drain electrode, and make source, drain electrode form Ohmic contact through high annealing;
(6) prepare antenna structure by ultraviolet photolithographic, electron beam evaporation and lift-off stripping technology successively; Prepare the nanometer gate electrode by beamwriter lithography, electron beam evaporation and lift-off stripping technology; And add thick electrode by ultraviolet photolithographic, electron beam evaporation and the preparation of lift-off stripping technology;
(7) adopt semiconductor packaging, the finished product of step (6) is encapsulated.
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| CN 201010297633 CN102445711B (en) | 2010-09-30 | 2010-09-30 | THz-wave detector |
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| CN109297932A (en) * | 2018-08-29 | 2019-02-01 | 北京遥感设备研究所 | A kind of quasi-optical servo scarnning mirror continuous wave reflection imaging system of Terahertz |
| CN109637978A (en) * | 2018-11-30 | 2019-04-16 | 天津大学 | It is drained based on MOSFET and rasterizes THz detector preparation method |
| CN112436071A (en) * | 2020-11-02 | 2021-03-02 | 天津大学 | Silicon-based grating grid terahertz detector based on frequency selective surface |
| CN113175991A (en) * | 2021-03-19 | 2021-07-27 | 清华大学 | Detection device and method for realizing terahertz wave detection |
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| CN114039201B (en) * | 2021-11-10 | 2023-11-07 | 中国科学院上海技术物理研究所 | Fractal butterfly terahertz antenna |
| CN113871514B (en) * | 2021-12-01 | 2022-02-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Terahertz detector based on exciton insulator phase characteristics and preparation method thereof |
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