CN102435837B - Micro electro mechanical system (MEMS) coupling degree-reconfigurable online detector for microwave power and preparation method thereof - Google Patents
Micro electro mechanical system (MEMS) coupling degree-reconfigurable online detector for microwave power and preparation method thereof Download PDFInfo
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- CN102435837B CN102435837B CN201110283706XA CN201110283706A CN102435837B CN 102435837 B CN102435837 B CN 102435837B CN 201110283706X A CN201110283706X A CN 201110283706XA CN 201110283706 A CN201110283706 A CN 201110283706A CN 102435837 B CN102435837 B CN 102435837B
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Abstract
The invention relates to an online detector for micro electro mechanical system (MEMS) coupling degree-reconfigurable microwave power, which consists of a microwave power coupler with reconfigurable coupling degree and an indirect heating-type MEMS microwave power detector. Gallium arsenide is taken as a substrate by the structure, and the reconfigurable coupler is controlled to enter low coupling degree, medium coupling degree and high coupling degree of three working states through two pairs of MEMS cantilever beam switch structures to realize reconfigurable online acquisition on microwave signals; the coupling output end of the coupler is connected with a terminal matching resistors to completely absorb the microwave signal power acquired from the main line of the coupler, and the microwave signal power is converted into heat energy, and then, temperature difference is formed near a thermo-electric pile formed by a metal thermocouple arm and a semiconductor thermocouple arm; and a constant potential difference which corresponds to the microwave power is generated on an output pressure welding block by the thermo-electric pile, thereby, online detection on the coupling degree-reconfigurable of microwave power is finished.
Description
Technical field
The present invention proposes micromechanics degree of coupling reconfigurable microwave power at thread detector and preparation method thereof, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
The measurement of microwave signal power is an important problem in modern radio-frequency and microwave communication system, although many solutions have been arranged at present, total unavoidable self the various shortcoming of traditional method.And, along with the appearance of MEMS technology in recent years, by new technology, go to replace original technology, and the more outstanding solution of proposition has become more and more active on this basis.A kind of MEMS thermoelectric (al) type microwave power detector of being made by the Seebeck effect, can absorb microwave signal by terminal resistance, and produce temperature difference, thereby make near the thermopair be arranged on terminal resistance produce thermoelectrical potential on the output press welding block.Adopt the reconfigurable microwave power coupling mechanism of the degree of coupling, can carry out online collection to microwave signal, utilize on this basis aforementioned thermoelectricity type micro-wave power detector, make based on MEMS technology degree of coupling reconfigurable microwave power and become possibility at thread detector.
Summary of the invention
technical matters:the purpose of this invention is to provide a kind of micromechanics degree of coupling reconfigurable microwave power based on the MEMS technology at thread detector and preparation method thereof, by controlling the MEMS cantilever switch, make the microwave power coupling mechanism that microwave signal is carried out to online collection can realize selectable coupling path, thereby realize the reconfigurable degree of coupling; By this coupling mechanism, the power of different proportion is sent into to the terminal build-out resistor, based on the Seebeck effect, the power transfer that it is coupled to output is thermoelectrical potential, realizes the on-line measurement of microwave power, thereby has realized the online detecting device of micromechanics degree of coupling reconfigurable microwave power.
technical scheme:micromechanics degree of coupling reconfigurable microwave power of the present invention be take and is with the golden arsenic of the back of the body to sow as substrate at thread detector, is provided with micro-band signal line, MEMS cantilever switch structure, isolation resistance, indirect heating type microwave power detector and air bridges on substrate:
Under gallium arsenide substrate, the growth layer of metal, for realizing the common earth construction of microstrip line construction, adopts gold copper-base alloy to form.
Micro-band signal line is for transmitting microwave signal, and this detecting device consists of this transmission line exactly.It mainly comprises that coupled microstrip line in main microstrip line, secondary microstrip line, by-pass gap and two are for realizing the transition microstrip line of electrical connection.Described main line is for connecting input port and straight-through output port, and described by-pass is for connecting coupling output port and the isolated port of restructural coupling mechanism.Described restructural coupling mechanism is the part at thread detector of the present invention, and its Main Function is transmission and the distribution of input microwave power.Planar dimension by designing these microstrip lines and the spacing of the microstrip line that is parallel to each other, can design the degree of coupling of this restructural coupling mechanism under the different operating state as requested; By controlling drive electrode, have or not driving voltage whether to control cantilever beam structure in DOWN or UP state, make this coupling mechanism enter corresponding duty.Micro-band signal line adopts gold copper-base alloy to form.
The reconfigurable microwave power coupling mechanism of the described degree of coupling comprises two pairs of MEMS cantilever switch structures, first pair of semi-girder length is relatively short, be called short MEMS semi-girder, the Ta Mao district is on the main line consisted of microstrip line, second pair of semi-girder length is relatively long, be called long MEMS semi-girder, on the coupled microstrip line of Ta Mao district in the by-pass gap; There is drive electrode each semi-girder below, is coated with one deck silicon nitride medium layer on drive electrode, and is connected with press welding block by lead-in wire; When each cantilever switch, under the DOWN state, its free end contacts with the salient point on the transition transmission line, for realizing the electrical connection of different microstrip lines; Salient point on described transition transmission line is positioned at the free-ended below of semi-girder, thereby for reducing the long-pending lossy microwave that reduces of MEMS semi-girder and transition microstrip line direct contact surface.Short MEMS semi-girder, long MEMS semi-girder, drive electrode, lead-in wire, press welding block, transition microstrip line and salient point all adopt gold copper-base alloy to form.
Air bridges, for cross-over connection coupled microstrip line and transition microstrip line, is used to form electrical connection.Air bridges adopts gold copper-base alloy to form.
Isolation resistance is connected to the isolated port place of by-pass, and the other end of isolation resistance connects the common ground under substrate by through hole, and it is coupled to the microwave power of this port when absorbing due to input port impedance mismatching by main line.Isolation resistance adopts tantalum-nitride material to form.
Two the terminal build-out resistors that are connected in parallel at the coupling output port place of restructural coupling mechanism, the other end of its each build-out resistor all is connected to the common ground of microstrip line by through hole; Be provided with the thermopair be comprised of semiconductor thermocouple arm and metal thermocouple arm near each terminal resistance, these thermopairs formation thermoelectric pile that interconnects each other, have the output press welding block at the two ends of its thermoelectric pile.The microwave power that the terminal build-out resistor will transfer to this coupling output port absorbs fully, and generation heat, near thermoelectric pile, formation temperature is poor, its thermoelectric pile is sensed this temperature difference, based on the Seebeck effect, produce the output of thermoelectrical potential on the output press welding block, thereby realize the measurement of microwave power.The coupling output port of described restructural coupling mechanism, described terminal build-out resistor and described thermoelectric pile form the indirect heating type microwave power detector jointly.Wherein the terminal build-out resistor adopts tantalum-nitride material, and the semiconductor thermocouple arm adopts the GaAs material of doping, and metal thermocouple arm adopts gold germanium nickel/gold copper-base alloy, and the output press welding block adopts gold copper-base alloy.
Described indirect heating type microwave power detector and described restructural coupling mechanism are common forms micromechanics degree of coupling reconfigurable microwave power of the present invention at thread detector.
On physical construction, micro-band signal line, MEMS cantilever beam structure, drive electrode, air bridges, lead-in wire, press welding block, terminal resistance, thermoelectric pile, isolation resistance are produced on the same gallium arsenide substrate.
Micromechanics degree of coupling reconfigurable microwave power of the present invention can be regarded the two-port network of by four port networks, being degenerated and being formed as at thread detector.The reconfigurable microwave power coupling mechanism of the degree of coupling has four ports, and it comprises input port, straight-through output port, coupling output port and isolated port; Connect isolation resistance at the isolated port place, for absorbing when the input port impedance mismatching, be coupled to the microwave power of isolated port by main line; The coupling output port connects the terminal build-out resistor of indirect heating type microwave power detector as the measuring junction of microwave power, by will the be coupled microwave power at output port place of this build-out resistor, absorb fully, electromagnetic energy is converted into to heat energy, according to the Seebeck effect, produce the output of thermoelectrical potential at the output press welding block of thermoelectric pile.This coupling mechanism is comprised of main microstrip line, secondary microstrip line, coupled microstrip line and transition microstrip line; Described main microstrip line is connected input port with straight-through output port, described secondary microstrip line is comprised of three microstrip lines that are parallel to each other on horizontal direction, and the output port that will be coupled is connected with isolated port; The described coupled microstrip line isolated is all arranged in each gap of these three by-passes, and its coupled microstrip line all parallels with the major-minor line.From the top down, article one coupled microstrip line strides across by-pass by air bridges and is connected with the transition microstrip line in the major-minor line outside, and second coupled microstrip line two ends are provided with long MEMS semi-girder Mao district, and its free end below is the transition microstrip line with salient point; And short MEMS semi-girder Mao district is on described main line, it is positioned at main line corner, and its free end below is the transition microstrip line with salient point; Each cantilever switch is controlled by the drive electrode of its below, and drive electrode is connected with press welding block by lead-in wire, covers the silicon nitride medium layer on drive electrode.When this coupling mechanism works in the weak coupling state, drive electrode under the two pairs of MEMS cantilever switch is all without driving voltage, these two pairs of semi-girders are all in the UP state, now the free end of each semi-girder does not all contact with the salient point on the transition microstrip line, the microwave signal entered by input port can only be coupled by two major-minor lines adjacent to each other, than the input microwave power of small scale, be coupled on the terminal build-out resistor, based on the Seebeck effect, to produce the thermoelectrical potential corresponding with being coupled watt level on the output press welding block of thermoelectric pile, thereby realize that the microwave power of the first degree of coupling is at thread detector, when this coupling mechanism works in middle degree of coupling state, shorter that has driving voltage to the drive electrode under semi-girder, and another is to the drive electrode under semi-girder during without driving voltage, now short semi-girder in the DOWN state and the long cantilever beam in the UP state, main line is by short semi-girder, coupled microstrip line in transition microstrip line and air bridges and by-pass gap forms electrical connection, the microwave signal entered by input port can be through main line, coupled microstrip line intercouples with the by-pass near on their two horizontal directions, these four microstrip lines form interdigital and are coupled in twos, form the main line coupled zone, the input microwave power of larger proportion is coupled to the terminal build-out resistor by the main line coupled zone, based on the Seebeck effect, to produce the thermoelectrical potential corresponding with being coupled watt level on the output press welding block of thermoelectric pile, thereby realize that the microwave power of the second degree of coupling is at thread detector, when this coupling mechanism works in high degree of coupling state, on drive electrode under each MEMS semi-girder, driving voltage is all arranged, now its cantilever switch is all in the DOWN state, main line is by long, short MEMS cantilever switch, air bridges and transition microstrip line are connected with two microstrip coupled lines, the microwave signal that input port enters can be through main line, article two, the by-pass on coupled microstrip line and three horizontal directions intercouples, these six microstrip lines form interdigital and are coupled in twos, form the microwave coupling district that main line coupled zone and by-pass coupled zone concur, more the input microwave power of vast scale is coupled to the terminal build-out resistor by this microwave coupling district, based on the Seebeck effect, to produce the thermoelectrical potential corresponding with being coupled watt level on the output press welding block of thermoelectric pile, thereby realize that the microwave power of the third degree of coupling is at thread detector.
Micromechanics degree of coupling reconfigurable microwave power in the preparation method of thread detector is:
1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3;
2) at the N of extension
+gallium arsenide substrate applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
4) apply photoresist on the substrate obtained in step 3), remove the photoresist that does not need to make the salient point place;
5) etching gallium arsenide substrate, remove photoresist, forms the gallium arsenide substrate with the salient point shape;
6) apply photoresist on the substrate obtained in step 5), remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
7) sputter gold germanium nickel/gold on substrate, its thickness is 2700 altogether;
8) peel off and remove the photoresist stayed in step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
9) apply photoresist on the substrate obtained in step 8), remove the photoresist that isolation resistance and terminal build-out resistor place are made in preparation;
10) sputter tantalum nitride on substrate, its thickness is 1
μm;
11) photoresist lift off stayed in step 9) is removed, the tantalum nitride above related removal photoresist, begin to take shape the isolation resistance and the terminal build-out resistor that consist of tantalum nitride;
12) apply photoresist on gallium arsenide substrate, remove preparation and make the main line formed by microstrip line, by-pass, coupled transmission line, the transition microstrip line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
13) on substrate by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
14) photoresist step 12) stayed is removed, relatedly remove the gold above the photoresist, begun to take shape the main line formed by microstrip line, by-pass, coupled transmission line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
15) anti-carve tantalum nitride, be completed into isolation resistance and terminal build-out resistor;
16) deposit photoetching polyimide sacrificial layer: apply 1.6 on gallium arsenide substrate
μthe polyimide sacrificial layer that m is thick, require to fill up pit, and the thickness of polyimide sacrificial layer has determined the height of MEMS semi-girder and air bridges; The photoetching polyimide sacrificial layer, only retain the sacrifice layer of MEMS semi-girder and air bridges below;
17) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist, remove preparation and make the main line formed by microstrip line, by-pass, coupled transmission line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and the local photoresist that goes between;
19) electroplate layer of gold, its thickness is 2
μm;
20) photoresist stayed removal step 18);
21) anti-carve titanium/gold/titanium, the corrosion down payment, form the main line consisted of microstrip line, by-pass, coupled transmission line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
22) by this gallium arsenide substrate thinning back side to 100
μm;
23) the substrate back dry etching is made through hole;
24) at this gallium arsenide substrate back side evaporation layer of gold;
25) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under MEMS semi-girder and air bridges, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries.
beneficial effect:micromechanics degree of coupling reconfigurable microwave power of the present invention is at thread detector, not only there is traditional microwave power detector, as low loss, high isolation and good directivity, can also utilize the MEMS cantilever beam structure to realize the reconfigurable microwave power coupling mechanism of the degree of coupling, and connect indirect thermoelectricity type micro-wave power detector at the coupling output terminal of this coupling mechanism, thereby realized that the reconfigurable microwave power of the micromechanics degree of coupling is at thread detector.
The accompanying drawing explanation
Fig. 1 is the schematic diagram of micromechanics degree of coupling reconfigurable microwave power at thread detector;
Fig. 2 is the partial top view of this micromechanics degree of coupling reconfigurable microwave power at thread detector;
Fig. 3 is that this micromechanics degree of coupling reconfigurable microwave power is at the A-A of thread detector sectional view;
Figure comprises: input port 1, straight-through port 2, coupling port 3, isolated port 4, the main line 5 formed by micro-band signal line, by-pass 6, coupling line 7 and 8, transition microstrip line 9, by main line 5, the main line coupled zone 10 that coupled microstrip line 7 and two microstrip lines that belong to by-pass form, the by-pass coupled zone 11 formed by two microstrip lines of by-pass and coupling line 8, salient point 12, short MEMS semi-girder 13, short MEMS semi-girder anchor district 14, drive electrode 15, silicon nitride medium layer 16, lead-in wire 17, press welding block 18, air bridges 19, long MEMS semi-girder 20, long MEMS semi-girder anchor district 21, isolation resistance 22, terminal build-out resistor 23, metal thermocouple arm 24, semiconductor thermocouple arm 25, output press welding block 26, through hole 27, gallium arsenide substrate 28, microstrip line is ground altogether, back of the body gold 29.
Specific embodiments
The specific embodiments of the directed microwave power coupling mechanism of microelectronic mechanical cantilever beam formula of this paper invention is as follows:
Be provided with micro-band signal line 5,6,7 on gallium arsenide substrate 28,8,9, short MEMS semi-girder anchor district 14, drive electrode 15, lead-in wire 17, press welding block 18, air bridges 19, long MEMS semi-girder 20, isolation resistance 22, terminal build-out resistor 23, metal thermocouple arm 24, semiconductor thermocouple arm 25, output press welding block 26, through hole 27:
Micro-band signal line is for transmitting microwave signal, and this detecting device consists of this transmission line exactly.It mainly comprises that coupled microstrip line 7 in main microstrip line 5, secondary microstrip line 6, by-pass gap and 8 and two are for realizing the transition microstrip line 9 of electrical connection.Described main line 5 is for connecting input port 1 and straight-through output port 2, coupling output port 3 and the isolated port 4 of described by-pass 5 for connecting the restructural coupling mechanism.Described restructural coupling mechanism is the part at thread detector of the present invention, and its Main Function is transmission and the distribution of input microwave power.Planar dimension by designing these microstrip lines and the spacing of the microstrip line that is parallel to each other, can design the degree of coupling of this restructural coupling mechanism under the different operating state as requested; By controlling drive electrode 15, have or not driving voltage whether to control cantilever beam structure 13 and 20 in DOWN or UP state, make this coupling mechanism enter corresponding duty.Micro-band signal line adopts gold copper-base alloy to form.
The reconfigurable microwave power coupling mechanism of the described degree of coupling comprises two pairs of MEMS cantilever switch structures, first pair of semi-girder length is relatively short, be called short MEMS semi-girder 13, Ta Mao district 14 is on the main line 5 consisted of microstrip line, second pair of semi-girder length is relatively long, be called long MEMS semi-girder 20, on the coupled microstrip line 8 of Ta Mao district 21 in by-pass 6 gaps; There is drive electrode 15 each semi-girder below, is coated with one deck silicon nitride medium layer 16 on drive electrode 15, and is connected with press welding block 18 by lead-in wire 17; When each cantilever switch, under the DOWN state, its free end contacts with the salient point 12 on transition transmission line 9, for realizing the electrical connection of different microstrip lines; Salient point 12 on described transition transmission line 9 is positioned at the free-ended below of semi-girder, thereby for reducing MEMS semi-girder 13 and 20 and the long-pending lossy microwave that reduces of transition microstrip line 9 direct contact surfaces.Short MEMS semi-girder 13, long MEMS semi-girder 20, drive electrode 15, go between 17, press welding block 18, transition microstrip line 9 and salient point 12 all adopt gold copper-base alloy to form.
Two the terminal build-out resistors 23 that are connected in parallel at coupling output port 3 places of restructural coupling mechanism, the other end of its each build-out resistor all is connected to the common ground 29 of microstrip line by through hole 27; Be provided with the thermopair be comprised of semiconductor thermocouple arm 25 and metal thermocouple arm 24 near each terminal resistance 23, these thermopairs formation thermoelectric pile that interconnects each other, have output press welding block 26 at the two ends of its thermoelectric pile.The microwave power that terminal build-out resistor 23 will transfer to this coupling output port 3 absorbs fully, and generation heat, near thermoelectric pile, formation temperature is poor, its thermoelectric pile is sensed this temperature difference, based on the Seebeck effect, produce the output of thermoelectrical potential on output press welding block 26, thereby realize the measurement of microwave power.The coupling output port 3 of described restructural coupling mechanism, described terminal build-out resistor 23 and described thermoelectric pile form the indirect heating type microwave power detector jointly.Wherein terminal build-out resistor 23 adopts tantalum-nitride material, and semiconductor thermocouple arm 25 adopts the GaAs material of doping, and metal thermocouple arm 24 adopts gold germanium nickel/gold copper-base alloy, and output press welding block 26 adopts gold copper-base alloy.
Described indirect heating type microwave power detector and described restructural coupling mechanism are common forms micromechanics degree of coupling reconfigurable microwave power of the present invention at thread detector.
On physical construction, micro-band signal line 5-9, MEMS cantilever beam structure 13 and 20, drive electrode 15, air bridges 19, go between 17, press welding block 18, terminal resistance 23, thermoelectric pile, isolation resistance 22 be produced on same gallium arsenide substrate 28.
Micromechanics degree of coupling reconfigurable microwave power of the present invention can be regarded the two-port network of by four port networks, being degenerated and being formed as at thread detector.The reconfigurable microwave power coupling mechanism of the degree of coupling has four ports, and it comprises input port 1, straight-through output port 2, coupling output port 3 and isolated port 4; In isolated port, 4 places connect isolation resistances 22, for absorbing when input port 1 impedance mismatching, are coupled to the microwave power of isolated port 4 by main line 5; Coupling output port 3 connects the terminal build-out resistor 23 of indirect heating type microwave power detector as the measuring junction of microwave power, by will the be coupled microwave power at output port 3 places of this build-out resistor 23, absorb fully, electromagnetic energy is converted into to heat energy, according to the Seebeck effect, produce the output of thermoelectrical potentials at the output press welding block 26 of thermoelectric pile.This coupling mechanism by main microstrip line 5, secondary microstrip line 6, coupled microstrip line 7 and 8 and transition microstrip line 9 form; Described main microstrip line 5 is connected input port 1 with straight-through output port 2, described secondary microstrip line 6 is comprised of three microstrip lines that are parallel to each other on horizontal direction, and the output port 3 that will be coupled is connected with isolated port 4; The described coupled microstrip line isolated 7 and 8 are all arranged in each gap of these three by-passes, and its coupled microstrip line all parallels with major-minor line 5 and 6.From the top down, article one coupled microstrip line 7 strides across by-pass 6 by air bridges 19 and is connected with the transition microstrip line 9 in the major-minor line outside, and second coupled microstrip line 8 two ends are provided with long MEMS semi-girder Mao district 21, and its free end below is the transition microstrip line 9 with salient point 12; And short MEMS semi-girder 13Mao district 14 is on described main line 5, it is positioned at main line 5 corners, and its free end below is the transition microstrip line 9 with salient point 12; Each cantilever switch is controlled by the drive electrode 15 of its below, and drive electrode 15 is connected with press welding block 18 by lead-in wire 17, covers the silicon nitride medium layer on drive electrode 15.When this coupling mechanism works in the weak coupling state, drive electrode 15 under the two pairs of MEMS cantilever switch is all without driving voltage, these two pairs of semi-girders are all in the UP state, now the free end of each semi-girder does not all contact with the salient point 12 on transition microstrip line 9, the microwave signal entered by input port 1 can only be coupled by two major-minor lines adjacent to each other, than the input microwave power of small scale, be coupled on terminal build-out resistor 23, based on the Seebeck effect, to produce the thermoelectrical potential corresponding with being coupled watt level on the output press welding block 26 of thermoelectric pile, thereby realize that the microwave power of the first degree of coupling is at thread detector, when this coupling mechanism works in middle degree of coupling state, shorter that has driving voltage to the drive electrode 15 under semi-girder 13, and another is to the drive electrode 15 under semi-girder 20 during without driving voltage, now short semi-girder 13 in the DOWN state and long cantilever beam 20 in the UP state, main line 5 is by short semi-girder 13, transition microstrip line 9 and air bridges 19 form electrical connection with the coupled microstrip line 7 in by-pass 6 gaps, the microwave signal entered by input port 1 can be through main line 5, coupled microstrip line 7 intercouples with the by-pass 6 near on their two horizontal directions, these four microstrip lines form interdigital and are coupled in twos, form main line coupled zone 10, the input microwave power of larger proportion is coupled to terminal build-out resistor 23 by main line coupled zone 10, based on the Seebeck effect, to produce the thermoelectrical potential corresponding with being coupled watt level on the output press welding block 26 of thermoelectric pile, thereby realize that the microwave power of the second degree of coupling is at thread detector, when this coupling mechanism works in high degree of coupling state, on drive electrode 15 under each MEMS semi-girder, driving voltage is all arranged, now its cantilever switch is all in the DOWN state, main line 5 is by long, short MEMS cantilever switch 13 and 20, air bridges 19 and transition microstrip line 9 are connected with 8 with two microstrip coupled lines 7, the microwave signal that input port 1 enters can be through main line 5, article two, the by-pass 6 on coupled microstrip line 7 and 8 and three horizontal directions intercouples, these six microstrip lines form interdigital and are coupled in twos, form the microwave coupling district that main line coupled zone 10 and by-pass coupled zone 11 concur, more the input microwave power of vast scale is coupled to terminal build-out resistor 23 by this microwave coupling district, based on the Seebeck effect, to produce the thermoelectrical potential corresponding with being coupled watt level on the output press welding block 26 of thermoelectric pile, thereby realize that the microwave power of the third degree of coupling is at thread detector.
Micromechanics degree of coupling reconfigurable microwave power in the preparation method of thread detector is:
1) prepare gallium arsenide substrate 28: select the semi-insulating GaAs substrate 28 of extension, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3;
2) at the N of extension
+ gallium arsenide substrate 28 applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm 25 of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 25 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm 25 that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm 25 of thermoelectric pile;
4) apply photoresist on the substrate 28 obtained in step 3), remove the photoresist that does not need to make salient point 12 places;
5) the etching gallium arsenide substrate 28, remove photoresist, form the gallium arsenide substrate 28 with salient point 12 shapes;
6) apply photoresist on the substrate 28 obtained in step 5), remove the photoresist that metal thermocouple arm 24 places of thermoelectric pile are made in preparation;
7) sputter gold germanium nickel/gold on substrate 28, its thickness is 2700 altogether;
8) peel off and remove the photoresist stayed in step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm 24 of formation thermoelectric pile removed;
9) apply photoresist on the substrate 28 obtained in step 8), remove the photoresist that isolation resistance 22 and terminal build-out resistor 26 places are made in preparation;
10) sputter tantalum nitride on substrate 28, its thickness is 1
μm;
11) photoresist lift off stayed in step 9) is removed, the tantalum nitride above related removal photoresist, begin to take shape the isolation resistance 22 and the terminal build-out resistor 23 that consist of tantalum nitride;
12) apply photoresist on gallium arsenide substrate 28, remove preparation and make the main line 5 formed by microstrip line, by-pass 6, coupled transmission line 7 and 8, transition microstrip line 9, MEMS semi-girder 13 and 20, MEMS semi-girder Mao district 14 and 21, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and go between 17;
13) on substrate 28 by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
14) photoresist step 12) stayed is removed, relatedly removed the gold above the photoresist, begin to take shape the main line 5 formed by microstrip line, by-pass 6, coupled transmission line 7 and 8, transition microstrip line 9, MEMS semi-girder 13 and 20, MEMS semi-girder Mao district 14 and 21, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and go between 17;
15) anti-carve tantalum nitride, be completed into isolation resistance 22 and terminal build-out resistor 23;
16) deposit photoetching polyimide sacrificial layer: on gallium arsenide substrate 28, apply 1.6
μthe polyimide sacrificial layer that m is thick, require to fill up pit, and the thickness of polyimide sacrificial layer has determined that the MEMS semi-girder is with 13 and 20 and the height of air bridges 19; The photoetching polyimide sacrificial layer, only retain MEMS semi-girder 13 and 20 and the sacrifice layer of air bridges 19 belows;
17) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist, remove preparation and make the main line 5 formed by microstrip line, by-pass 6, coupled transmission line 7 and 8, transition microstrip line 9, the photoresist in MEMS semi-girder 13 and 20, MEMS semi-girder Mao district 14 and 21, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and 17 places that go between;
19) electroplate layer of gold, its thickness is 2
μm;
20) photoresist stayed removal step 18);
21) anti-carve titanium/gold/titanium, the corrosion down payment, the main line 5 that formation consists of microstrip line, by-pass 6, coupled transmission line 7 and 8, transition microstrip line 9, MEMS semi-girder 13 and 20, MEMS semi-girder Mao district 14 and 21, drive electrode 15, press welding block 18, output press welding block 26, air bridges 19 and go between 17;
22) by these gallium arsenide substrate 28 thinning back sides to 100
μm;
23) the substrate back dry etching is made through hole 27;
24) at these gallium arsenide substrate 28 back side evaporation layer of golds;
25) discharge polyimide sacrificial layer: developer solution soaks, remove MEMS semi-girder 13 and 20 and air bridges 19 under polyimide sacrificial layer, deionized water soaks slightly, the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries.
Distinguish that to be whether the standard of this structure as follows:
Micromechanics degree of coupling reconfigurable microwave power of the present invention, at thread detector, is comprised of the reconfigurable coupling mechanism of the degree of coupling and an indirect heating type microwave power detector of isolating the termination isolation resistance.The reconfigurable coupling mechanism of the degree of coupling is controlled under corresponding cantilever switch by drive electrode, makes coupling mechanism enter basic, normal, high degree of coupling duty; Under every kind of duty, the microwave signal that accounts for incoming wave power different proportion is coupled to the terminal build-out resistor, by this resistance, electromagnetic energy is converted to heat energy, and by arrange nigh by thermopair the thermoelectric pile to forming, sense corresponding temperature difference, export with constant thermoelectrical potential on the output press welding block.
The structure that meets above condition is considered as micromechanics degree of coupling reconfigurable microwave power of the present invention at thread detector.
Claims (2)
1. a micromechanics degree of coupling reconfigurable microwave power is at thread detector, be produced on gallium arsenide substrate (28), be provided with main line (5) thereon, by-pass (6), coupled microstrip line (7, 8), transition microstrip line (9), MEMS semi-girder (13, 20), drive electrode (15), lead-in wire (17), press welding block (18), air bridges (19), isolation resistance (22), terminal build-out resistor (23) and thermoelectric pile, it is characterized in that this device is two port devices of being degenerated by four port microwave devices and obtaining, it consists of jointly reconfigurable microwave power coupling mechanism and indirect heating type microwave power detector two parts, described restructural coupling mechanism comprise main line (5) for connecting input port (1) and straight-through output port (2), the by-pass (6) for butt coupling output port (3) and isolated port (4), transition microstrip line (9), by by-pass (6) Perfect Ring around but disjunct two coupled microstrip lines (7 each other, 8) and two pairs of MEMS semi-girders (13,20) structure, the isolated port (4) on by-pass (6) connects isolation resistance (22), the output press welding block (26) of the coupling output terminal (3) that described indirect heating type microwave power detector comprises the restructural coupling mechanism, terminal build-out resistor (23), thermoelectric pile and thermoelectric pile, its coupling output terminal (3) two terminal build-out resistors (23) that are connected in parallel.
2. micromechanics degree of coupling reconfigurable microwave power according to claim 1 is at thread detector, it is characterized in that in described reconfigurable microwave power coupling mechanism, a main line (5) of power coupling unit, three by-passes (6) and two by by-pass (6) Perfect Ring around but disjunct coupled microstrip line (7 each other, 8) parallel to each other, and two transition microstrip lines (9) lay respectively at main line (5) and by-pass (6) is done the as a whole left and right sides; A pair of short MEMS semi-girder Mao district (14) be positioned at main line (5) upper and another to long MEMS semi-girder Mao district (21) be positioned at one by by-pass (6) Perfect Ring around but the two ends of disjunct coupled microstrip line (8) each other, all there is drive electrode (15) below each MEMS semi-girder, all cover silicon nitride medium layer (16) on its drive electrode (15), be the transition microstrip line (9) of band salient point (12) in each free-ended below of MEMS semi-girder (13,20); Air bridges (19) by another by by-pass (6) Perfect Ring around but disjunct coupled microstrip line (7) and transition microstrip line (9) electric interconnection each other.
3. micromechanics degree of coupling reconfigurable microwave power according to claim 1 is at thread detector, it is characterized in that in described indirect heating type microwave power detector, two terminal build-out resistors (23) are parallel-connected to the coupling output port (3) of restructural coupling mechanism, and the other end of its each terminal build-out resistor (23) all is connected to the common ground of microstrip line by through hole (27); Be equipped with the thermopair be comprised of semiconductor thermocouple arm (24) and metal thermocouple arm (25) near each terminal build-out resistor (23), these thermopairs formation thermoelectric pile that interconnects each other, have output press welding block (26) at the two ends of its thermoelectric pile.
4. a micromechanics degree of coupling reconfigurable microwave power as claimed in claim 1, in the preparation method of thread detector, is characterized in that the preparation method is:
1) prepare gallium arsenide substrate (28): select the semi-insulating GaAs substrate (28) of extension, wherein extension N
+the doping content of gallium arsenide substrate is 10
18cm
-3;
2) at the N of extension
+gallium arsenide substrate (28) applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm (25) of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide substrate is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm (25) that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the semiconductor thermocouple arm (25) of the thermoelectric pile that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm (25) of thermoelectric pile;
4) the upper photoresist that applies of the gallium arsenide substrate obtained in step 3) (28), remove and do not need to make the local photoresist of salient point (12);
5) etching gallium arsenide substrate (28), remove photoresist, forms the gallium arsenide substrate (28) of band salient point (12) shape;
6) the upper photoresist that applies of the gallium arsenide substrate obtained in step 5) (28), the photoresist that the metal thermocouple arm (24) of removal preparation making thermoelectric pile is located;
7) at the upper sputter gold germanium nickel/gold of gallium arsenide substrate (28), its thickness is 2700 altogether;
8) peel off and remove the photoresist stayed in step 6), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm (24) of formation thermoelectric pile removed;
9) the upper photoresist that applies of the gallium arsenide substrate obtained in step 8) (28), remove the photoresist that preparation making isolation resistance (22) and terminal build-out resistor (23) are located;
10) at the upper sputter tantalum nitride of gallium arsenide substrate (28), its thickness is 1
μm;
11) photoresist lift off stayed in step 9) is removed, the tantalum nitride above related removal photoresist, begin to take shape the isolation resistance (22) and the terminal build-out resistor (23) that consist of tantalum nitride;
12) at the upper photoresist that applies of gallium arsenide substrate (28), remove preparation and make the main line (5) formed by microstrip line, by-pass (6), coupled microstrip line (7,8), transition microstrip line (9), MEMS semi-girder (13,20), MEMS semi-girder Mao district (14,21), drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and lead-in wire (17);
13) upper by the evaporation mode layer of gold of growing in gallium arsenide substrate (28), its thickness is 0.3
μm;
14) photoresist step 12) stayed is removed, relatedly removed the gold above the photoresist, begin to take shape the main line (5) formed by microstrip line, by-pass (6), coupled microstrip line (7,8), transition microstrip line (9), MEMS semi-girder (13,20), MEMS semi-girder Mao district (14,21), drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and lead-in wire (17);
15) anti-carve tantalum nitride, be completed into isolation resistance (22) and terminal build-out resistor (23);
16) deposit photoetching polyimide sacrificial layer: in the upper coating 1.6 of gallium arsenide substrate (28)
μthe polyimide sacrificial layer that m is thick, require to fill up pit, and the thickness of polyimide sacrificial layer has determined the height of MEMS semi-girder (13,20) and air bridges (19); The photoetching polyimide sacrificial layer, only retain the polyimide sacrificial layer of MEMS semi-girder (13,20) and air bridges (19) below;
17) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist, remove preparation and make the main line (5) formed by microstrip line, by-pass (6), coupled microstrip line (7,8), transition microstrip line (9), MEMS semi-girder (13,20), MEMS semi-girder Mao district (14,21), drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and the local photoresist of lead-in wire (17);
19) electroplate layer of gold, its thickness is 2
μm;
20) photoresist stayed removal step 18);
21) anti-carve titanium/gold/titanium, the corrosion down payment, the main line that formation consists of microstrip line (5), by-pass (6), coupled microstrip line (7,8), transition microstrip line (9), MEMS semi-girder (13,20), MEMS semi-girder Mao district (14,21), drive electrode (15), press welding block (18), output press welding block (26), air bridges (19) and lead-in wire (17);
22) by this gallium arsenide substrate (28) thinning back side to 100
μm;
23) gallium arsenide substrate (28) back side dry etching is made through hole (27);
24) at this gallium arsenide substrate (28) back side evaporation layer of gold;
25) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under MEMS semi-girder (13,20) and air bridges (19), and deionized water soaks slightly, and the absolute ethyl alcohol dehydration, volatilize under normal temperature, dries.
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| CN106199173A (en) * | 2016-07-19 | 2016-12-07 | 南京邮电大学 | High-precision Microwave power detecting system based on cantilever beam cascade structure and method |
| CN106698326B (en) * | 2017-01-24 | 2018-04-03 | 东南大学 | Based on silicon-base micro-mechanical cantilever beam T junction direct-heating type millimeter-wave signal detector |
| CN111044796B (en) * | 2019-12-31 | 2022-03-29 | 东南大学 | Symmetrical thermoelectric MEMS microwave standing wave meter and preparation method thereof |
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