CN102375090B - Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof - Google Patents
Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof Download PDFInfo
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- CN102375090B CN102375090B CN201110283705.5A CN201110283705A CN102375090B CN 102375090 B CN102375090 B CN 102375090B CN 201110283705 A CN201110283705 A CN 201110283705A CN 102375090 B CN102375090 B CN 102375090B
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Abstract
The invention discloses a micromechanical cantilever beam switch online microwave power detector, which consists of a microelectronic mechanical cantilever beam switch type microwave power coupler with a variable coupling degree and a direct heating MEMS (Microelectronic Mechanical System) microwave power detector. In the structure, gallium arsenide is taken as a substrate; the coupler comprises an MEMS cantilever beam switch structure; by controlling a driving electrode, a cantilever beam switch is in DOWN or UP state, and the input microwave power is coupled to a thermal coupler at different ratios respectively; microwave power output by coupling is directly absorbed by the thermal couple, and electromagnetic energy is directly converted into heat, so that a thermal couple at the other end is used for outputting on an output press welding block at a constant electric potential difference; and the constant electric potential difference corresponds to the magnitude of the microwave power obtained at the coupling output end.
Description
Technical field
The present invention proposes the online microwave power detector of micromachine cantilever beam switch and preparation method, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
In microwave signal, comprise power, phase place and the large information of frequency three, wherein power is a key character parameter of microwave signal.The measurement of microwave power has considerable using value in microwave technology, and it has been indispensable part in electromagnetic wave measurement field.Along with in recent years, MEMS technology flourish, makes the various application based on technique become possibility.A kind of its principle of work of the microwave power detector based on MEMS technology is, microwave signal can directly heat the thermoelectric arm that is positioned at line end, electromagnetic energy is converted into heat energy, so will be between heated thermopair and the thermoelectric arm being formed by another kind of material formation temperature poor, according to Seebeck effect, this temperature difference can make to occur and the big or small corresponding constant potential difference of microwave power on the output terminal of thermopair, thereby completes the measurement of microwave power.It is good that this measuring method has sensitivity, the advantage such as the high and power attenuation of the linearity is little, develop rapidly along with modern microwave integrated circuit, microwave power measurement requires to realize the online measurement of the microwave power on sheet, can control according to actual needs the ratio of microwave power, and measure the size of microwave power.Utilize micro-electromechanical cantilever beam switch type microwave power coupling mechanism, and adopt above-mentioned direct-heating type MEMS microwave power detector scheme, make the online microwave power detector of cantilever switch with above-mentioned functions become possibility.
Summary of the invention
technical matters:in order to realize the online measurement to control microwave power, the invention provides a kind of based on the online microwave power detector of MEMS technology microelectronic mechanical cantilever beam switch and preparation method, by the controlled microwave power coupling mechanism of the design degree of coupling, realize the online collection that microwave signal is carried out with different ratios, simultaneously at coupling output terminal, make the thermoelectric pile matching with transmission line characteristic impedance and formed by the thermoelectric arm of different materials, the microwave signal of input is absorbed completely, and be converted into the formal output that thermoelectrical potential is constant voltage, thereby detected microwave power size under the specific operation mode of coupling mechanism.
technical scheme:it is substrate that the online microwave power detector of micromachine cantilever beam switch of the present invention be take the golden gallium arsenide (GaAs) of the band back of the body, at the back side of substrate, there is the metal of even thickness as common ground, on substrate, be provided with the main transmission line that micro-band signal line forms, secondary transmission line, two identical MEMS semi-girders, semi-girder Mao district, air bridges, output press welding block, isolation resistance, one by four thermoelectric arms, i.e. two pairs of thermoelectric piles that thermopair forms:
There is the uniform metal of a layer thickness at the gallium arsenide substrate back side, as the common ground of microstrip line construction, adopts gold copper-base alloy to form.
Micro-band signal line for transmitting microwave signal, is the main transmission line structure of realizing the variable microwave power coupling mechanism of the degree of coupling on substrate.Four ports of this coupling mechanism and main transmission line, secondary transmission line, coupled transmission line form by this structure; By designing planar dimension and the mutual spacing of each micro-band signal line, can design as requested the degree of coupling under various mode of operations of this coupling mechanism.This micro-band signal line adopts gold copper-base alloy to form.
This microwave power coupling mechanism comprises two identical movable MEMS cantilever beam structures, and it belongs to the category of series connection direct contact type mems switch.Semi-girder Mao district is connected with main micro-band signal line; Semi-girder below has drive electrode, covers silicon nitride medium layer on drive electrode, and drive electrode is connected with press welding block by going between; Below semi-girder free end, there is the micro-band signal line of transition with salient point, and on its salient point, there is no silicon nitride medium layer.By controlling the drive electrode of semi-girder below, have or not driving voltage whether to control this semi-girder in DOWN or UP state, thereby realize tight coupling or the loose coupling duty of this microwave power coupling mechanism.MEMS semi-girder, drive electrode, lead-in wire and press welding block all adopt gold copper-base alloy to form.
Coupled microstrip line and the micro-band signal line of transition that air bridges is isolated for cross-over connection, its air bridges and coupled microstrip line all adopt gold copper-base alloy to form.
Isolation resistance is connected to the isolated port of coupling mechanism, for absorbing completely due to main transmission line input impedance mismatch, and the microwave power of exporting in isolated port, this resistance can be heat by this part power transfer, adopts tantalum-nitride material to form.
Thermoelectric pile is connected to the coupling output port of coupling mechanism, two pairs of thermopairs that mate with coupling output port impedance phase, consists of, and every pair of thermopair is contacted and formed by a semiconductor thermocouple arm and a metal thermocouple arm.According to Seebeck effect, this structure of thermopair can directly absorb the microwave signal power of being inputted by one end, and produce thermoelectrical potential at the other end of thermopair, by output press welding block stable output electric potential difference, by this electric potential difference, can be determined the watt level of corresponding microwave signal.Wherein semiconductor thermocouple arm adopts the GaAs material of doping, and metal thermocouple arm adopts gold copper-base alloy to form, and output press welding block adopts gold copper-base alloy.
In physical construction, micro-band signal line, MEMS semi-girder, semi-girder Mao district, drive electrode, lead-in wire, press welding block, output press welding block, air bridges, isolation resistance and thermoelectric pile are all produced in same gallium arsenide substrate.
The online microwave power detector of micromachine cantilever beam switch of the present invention is to consist of variable microwave power coupling mechanism and a direct-heating type microwave power detector of the degree of coupling, microwave power coupling mechanism is wherein four port devices, be respectively input port, straight-through output port, coupling output port and isolated port.Between input port and straight-through output port, be the main transmission line being formed by a micro-band signal line, i.e. coupling mechanism main line; Between coupling output port and isolated port, there are two parallel microstrip lines to form secondary transmission line, i.e. coupling mechanism by-pass; In the middle of by-pass, there is a relatively isolated microstrip line, be called coupled transmission line, by air bridges, be connected with the transition microstrip line outside coupling mechanism; The coupling output port of coupling mechanism is connected to the thermoelectric pile consisting of two pairs of thermopairs; Isolated port is connected to isolation resistance, connects the common ground of microstrip line by through hole; When coupling mechanism input port impedance mismatch, isolated port will have microwave power output, and now isolation resistance will sponge this part power; When coupling mechanism input port mates, isolated port does not have power stage; This coupling mechanism has two MEMS cantilever switch that structure is identical, and semi-girder anchor district is on coupling mechanism main line, and semi-girder free end below is the transition microstrip line that has bump structure; Drive electrode is connected with press welding block by lead-in wire, while having driving voltage on drive electrode, cantilever switch is in DOWN state, its free end forms and contacts with the salient point of transition microstrip line, microwave signal uploads to coupled transmission line from main line, and main line coupled zone and by-pass coupled zone form tight coupling district, and the degree of coupling is about 6dB, the thermopair of coupling output terminal will sponge microwave power, be converted into steady heat electromotive force and export on output press welding block; When drive electrode does not have driving voltage, cantilever switch is in UP state, its free end does not form and contacts with transition microstrip line salient point, only have close major-minor line mutually to intercouple, now this coupling mechanism is equivalent to common directional coupler, and the degree of coupling is about 3dB, and relatively less microwave power is exported by the output port that is coupled, and be converted into stable thermoelectrical potential by the thermopair of this port, on output press welding block, export.
The preparation method of the online microwave power detector of micromachine cantilever beam switch is:
1) prepare gallium arsenide substrate: select the semi-insulating GaAs substrate of extension, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3, its square resistance be 100～130 Ω/;
2) at the N of extension
+gallium arsenide substrate applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm of thermoelectric pile;
4) photoetching: remove the photoresist of not making salient point place;
5) etching, forms the gallium arsenide substrate with salient point shape;
6) on the substrate obtaining in step 3), apply photoresist, remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
7) sputter gold germanium nickel/gold on substrate, its thickness is 2700 altogether;
8) peel off and remove the photoresist staying in step 6), the related gold germanium nickel/gold on photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
9) on the substrate obtaining in step 8), apply photoresist, remove the photoresist that isolation resistance place is made in preparation;
10) sputter tantalum nitride on substrate, its thickness is 1
μm;
11) photoresist lift off staying in step 9) is removed, the tantalum nitride above related removal photoresist, begins to take shape the isolation resistance consisting of tantalum nitride;
12) in gallium arsenide substrate, apply photoresist, remove preparation and make the main line being formed by microstrip line, by-pass, coupled transmission line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
13) on substrate by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
14) photoresist step 12) being stayed is removed, relatedly remove the gold above photoresist, begun to take shape the main line being formed by microstrip line, by-pass, coupled transmission line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
15) anti-carve tantalum nitride, form the isolation resistance being connected with isolated port;
16) deposit photoetching polyimide sacrificial layer: in gallium arsenide substrate, apply 1.6
μthe polyimide sacrificial layer that m is thick, requires to fill up pit, the thickness of polyimide sacrificial layer determined MEMS semi-girder with its below the distance between silicon nitride medium layer and the height of air bridges on drive electrode; Photoetching polyimide sacrificial layer, only retains the sacrifice layer of MEMS semi-girder and air bridges below
17) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist, remove preparation and make the main line being formed by microstrip line, by-pass, coupled transmission line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and the local photoresist that goes between;
19) electroplate layer of gold, its thickness is 2
μm;
20) photoresist staying removal step 18);
21) anti-carve titanium/gold/titanium, corrosion down payment, forms the main line consisting of microstrip line, by-pass, coupled transmission line, MEMS semi-girder, MEMS semi-girder Mao district, drive electrode, press welding block, output press welding block, air bridges and lead-in wire;
22) by this gallium arsenide substrate thinning back side to 100
μm;
23) substrate back dry etching is made through hole;
24) at this gallium arsenide substrate back side evaporation layer of gold;
25) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS semi-girder and air bridges, deionized water soaks slightly, and absolute ethyl alcohol dehydration, volatilizees under normal temperature, dries.
beneficial effect:the online microwave power detector of micromachine cantilever beam switch of the present invention, has realized the online detection that microwave power size is controlled, and has advantages of with GaAs single-chip microwave integration circuit compatible mutually.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the online microwave power detector of micromachine cantilever beam switch;
Fig. 2 is the partial top view of the online microwave power detector of micromachine cantilever beam switch;
Fig. 3 is the A-A sectional view of the online microwave power detector of micromachine cantilever beam switch;
Figure comprises: microwave signal input end 1, straight-through output terminal 2, coupling output terminal 3, isolation end 4, the main transmission line 5 being formed by microstrip line, secondary transmission line 6, coupled transmission line 7, transition microstrip line 8, salient point 9, main line coupled zone 10, by-pass coupled zone 11, MEMS semi-girder 12, MEMS semi-girder anchor district 13, silicon nitride medium layer 14, drive electrode 15, lead-in wire 16, press welding block 17, air bridges 18, isolation resistance 19, semiconductor thermocouple arm 20, metal thermocouple arm 21, output press welding block 22, through hole 23, gallium arsenide substrate 24, back of the body gold 25.
Specific embodiments
The specific embodiments of the online microwave power detector of micromachine cantilever beam switch of the present invention is as follows:
The online microwave power detector of micromachine cantilever beam switch of the present invention be take gallium arsenide (GaAs) as substrate 24, at the back side of substrate, there is the metal of uniform thickness as common ground, back of the body gold 25, are provided with the main transmission line 5, secondary transmission line 6, MEMS semi-girder 12, semi-girder Mao district 13, the air bridges 18 that are comprised of micro-band signal line, export press welding block 22, isolation resistance 19, one be by 20,21 two pairs of thermoelectric piles that thermopair forms of four thermopairs on substrate 24:
There is the uniform metal of a layer thickness at gallium arsenide substrate 24 back sides, as the common ground of microstrip line construction, carry on the back gold, adopt gold copper-base alloy to form.
Micro-band signal line for transmitting microwave signal, is the primary structure of realizing the variable microwave power coupling mechanism of the degree of coupling on substrate 24.Four ports of this coupling mechanism and main transmission line 5, secondary transmission line 6, coupled transmission line 6 form by micro-band signal line; By designing planar dimension and the mutual spacing of each micro-band signal line, can design as requested the degree of coupling under various mode of operations of this coupling mechanism.This micro-band signal line adopts gold copper-base alloy to form.
This microwave power coupling mechanism comprises two identical movable MEMS semi-girder 12 structures, and it belongs to the category of series connection direct contact type mems switch.Semi-girder Mao district 13 is connected with main transmission line 5; Semi-girder below has drive electrode 15, covers silicon nitride medium layer 14 on drive electrode 15, and drive electrode 15 is connected with press welding block 17 by lead-in wire 16; Below semi-girder free end, there is the micro-band signal line 8 of transition with salient point 9, and there is no silicon nitride medium layer 14 on its salient point 9.By controlling the drive electrode 15 of semi-girder below, have or not driving voltage whether to control this semi-girder in DOWN or UP state, thereby realize tight coupling or the loose coupling duty of this microwave power coupling mechanism.MEMS semi-girder 10, drive electrode 15, lead-in wire 16 and press welding block 17 all adopt gold copper-base alloy to form.
The micro-band signal line 8 of the coupled microstrip line 7 that air bridges 18 is isolated for cross-over connection and transition, the micro-band signal line 8 of its air bridges 18, coupled microstrip line 7 and transition all adopts gold copper-base alloy to form.
Isolation resistance 19 is connected to the isolated port 4 of coupling mechanism, absorb completely due to main transmission line 5 input impedance mismatches, and the microwave power of exporting in isolated port 4 can be heat by this part power transfer, and this resistance adopts tantalum-nitride material.
Thermoelectric pile is connected to the coupling output port 3 of coupling mechanism, two pairs of thermopairs that mate with coupling output port impedance phase, consists of, and every pair of thermopair is contacted and formed by a semiconductor thermocouple arm 20 and a metal thermocouple arm 21.According to Seebeck effect, this structure of thermopair can directly absorb the microwave signal power of being inputted by one end, and produces thermoelectrical potential at the other end of thermopair, by output press welding block 22 stable output electric potential differences.By this electric potential difference, can be determined the watt level of corresponding microwave signal.Wherein semiconductor thermocouple arm 20 adopts the GaAs material of doping, and metal thermocouple arm 21 adopts gold copper-base alloy to form, and output press welding block adopts gold copper-base alloy.
In physical construction, micro-band signal line 5-8, MEMS semi-girder 12, semi-girder Mao district 13, drive electrode 15, lead-in wire 16, press welding block 17, output press welding block 22, air bridges 18, isolation resistance 19 and thermoelectric pile are all produced in same gallium arsenide substrate 24.
The online microwave power detector of micromachine cantilever beam switch of the present invention is to consist of variable microwave power coupling mechanism and a direct-heating type microwave power detector of the degree of coupling, microwave power coupling mechanism is wherein four port devices, be respectively input port 1, straight-through output port 2, coupling output port 3 and isolated port 4.Between input port 1 and straight-through output port 2, be the main transmission line consisting of a micro-band signal line, coupling mechanism main line 5; Between coupling output port 3 and isolated port 4, have two parallel microstrip lines to form secondary transmission line, coupling mechanism by-pass 6; In the middle of by-pass, there is a relatively isolated microstrip line, be called coupled transmission line 7, by air bridges 18, be connected with the transition microstrip line 8 outside coupling mechanism; The coupling output port 3 of coupling mechanism is connected to the thermoelectric pile that the thermoelectric arm 20 and 21 by different materials forms; Isolated port 4 is connected to isolation resistance 19, connects the common ground of microstrip line by through hole 23, i.e. substrate back of the body gold 25; When coupling mechanism input port 1 impedance mismatch, isolated port 4 will have microwave power output, and now isolation resistance 19 will sponge this part power; When coupling mechanism input port 1 coupling, isolated port 3 does not have power stage; This coupling mechanism has two MEMS semi-girder 12 switches that structure is identical, and semi-girder anchor district 13 is on coupling mechanism main line 5, and semi-girder 5 free end belows are the transition microstrip lines 8 that have salient point 9 structures; Drive electrode 15 is connected with press welding block 17 by lead-in wire 16, while having driving voltage on drive electrode 15, cantilever switch is in DOWN state, its free end forms and contacts with transition microstrip line 8, microwave signal uploads to coupled transmission line 7 from main line 5, and main line coupled zone 10 forms tight coupling district with by-pass coupled zone 11, and the degree of coupling is about 6dB, thermopair by coupling output port 3 absorbs microwave power, is converted into the output on output press welding block 22 of steady heat electromotive force; When drive electrode 15 does not have driving voltage, cantilever switch is in UP state, its free end does not form and contacts with transition microstrip line 8, only have close major-minor line mutually to intercouple, now this coupling mechanism is equivalent to common directional coupler, and the degree of coupling is about 3dB, and relatively less microwave power is by output port 3 outputs that are coupled, and be converted into stable thermoelectrical potential by the thermopair of this port, on output press welding block, export.
The preparation method of the online microwave power detector of micromachine cantilever beam switch is:
1) prepare gallium arsenide substrate 24: select the semi-insulating GaAs substrate of extension, wherein extension N
+the doping content of gallium arsenide is for being 10
18cm
-3, its square resistance be 100～130 Ω/;
2) at the N of extension
+gallium arsenide substrate applies photoresist, retains the photoresist that preparation is made ohmic contact regions and begun to take shape the semiconductor thermocouple arm 20 of thermoelectric pile, then removes the N of the extension in photoresist place
+gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 20 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm 20 that begins to take shape, being completed into its doping content is 10
17cm
-3the semiconductor thermocouple arm 20 of thermoelectric pile;
4) photoetching: remove the photoresist of not making salient point 9 places;
5) etching, forms the gallium arsenide substrate with salient point 9 shapes;
6) on the substrate obtaining in step 3), apply photoresist, remove the photoresist that metal thermocouple arm 21 places of thermoelectric pile are made in preparation;
7) sputter gold germanium nickel/gold on substrate 24, its thickness is 2700 altogether;
8) peel off and remove the photoresist staying in step 6, the related gold germanium nickel/gold on photoresist, the metal thermocouple arm 21 of formation thermoelectric pile removed;
9) on the substrate obtaining in step 8), apply photoresist, remove the photoresist that isolation resistance 19 places are made in preparation;
10) sputter tantalum nitride on substrate, its thickness is 1
μm;
11) photoresist lift off staying in step 9) is removed, the tantalum nitride above related removal photoresist, begins to take shape the isolation resistance 19 consisting of tantalum nitride;
12) in gallium arsenide substrate 24, apply photoresist, remove preparation and make the main line 5 being formed by microstrip line, by-pass 6, coupled transmission line 7, MEMS semi-girder 12, MEMS semi-girder Mao district 13, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and lead-in wire 16;
13) at substrate 24) upper by the evaporation mode layer of gold of growing, its thickness is 0.3
μm;
14) photoresist step 12) being stayed is removed, relatedly removed the gold above photoresist, begin to take shape the main line 5 being formed by microstrip line, by-pass 6, coupled transmission line 7, MEMS semi-girder 12, MEMS semi-girder Mao district 13, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and lead-in wire 16;
15) anti-carve tantalum nitride, form the isolation resistance 19 being connected with isolated port 4;
16) deposit photoetching polyimide sacrificial layer: in gallium arsenide substrate, apply 1.6
μthe polyimide sacrificial layer that m is thick, requires to fill up pit, the thickness of polyimide sacrificial layer determined MEMS semi-girder 12 with its below the distance between silicon nitride medium layer 14 and the height of air bridges 18 on drive electrode 15; Photoetching polyimide sacrificial layer, only retains the sacrifice layer of MEMS semi-girder 12 and air bridges 18 belows
17) by evaporation mode, grow for the down payment of electroplating: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
18) apply photoresist, remove preparation and make the main line 5 being formed by microstrip line, by-pass 6, coupled transmission line 7, the photoresist in MEMS semi-girder 12, MEMS semi-girder Mao district 13, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and lead-in wire 16 places;
19) electroplate layer of gold, its thickness is 2
μm;
20) photoresist staying removal step 18);
21) anti-carve titanium/gold/titanium, corrosion down payment, forms the main line 5 consisting of microstrip line, by-pass 6, coupled transmission line 7, MEMS semi-girder 12, MEMS semi-girder Mao district 13, drive electrode 15, press welding block 17, output press welding block 22, air bridges 18 and lead-in wire 16;
22) by these gallium arsenide substrate 24 thinning back sides to 100
μm;
23) substrate back dry etching is made through hole 23;
24) at these gallium arsenide substrate 24 back side evaporation layer of golds;
25) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS semi-girder 12 and air bridges 18, deionized water soaks slightly, and absolute ethyl alcohol dehydration, volatilizees under normal temperature, dries.
Distinguish that to be whether the standard of this structure as follows:
The online microwave power detector of micromachine cantilever beam switch of the present invention, consists of adjustable microwave power coupling mechanism and a direct-heating type thermoelectric pile of the degree of coupling; 2 of coupling mechanism input port 1 and straight-through ports are the main transmission lines 5 consisting of microstrip line, between coupling output port 3 and isolated port 4, are the secondary transmission lines 6 consisting of microstrip line; MEMS semi-girder is on main line 5, and there is drive electrode 15 its below; Drive electrode 15 is controlled cantilever switch 12 makes this coupling mechanism work in loose coupling or tight coupling; Isolation output port 4 is connected to isolation resistance 19, by through hole 23 ground connection, this resistance when absorbing due to input port 1 impedance mismatch at the microwave power of the output of this port; Coupling output terminal 3 is connected to two pairs of thermopairs pair, and every a pair of thermopair consists of a semiconductor thermocouple arm 20 and a metal thermocouple arm 21; Thermopair is converted into stable thermoelectrical potential by the microwave power of coupling output port 3 outputs, by 22 outputs of output press welding block; The structure that meets above condition is considered as the online microwave power detector of micromachine cantilever beam switch of the present invention.
Claims (1)
1. the online microwave power detector of micromachine cantilever beam switch, it is characterized in that: take with the golden gallium arsenide (24) of the back of the body is substrate, at the back side of substrate, there is the metal of even thickness as common ground, on substrate, be provided with the main transmission line (5) that micro-band signal line forms, secondary transmission line (6), coupled transmission line (7), two identical MEMS cantilever switch (12), isolation resistance (19), MEMS semi-girder Mao district (13), drive electrode (15), press welding block (17), output press welding block (22), air bridges (18), lead-in wire (16), semiconductor thermocouple arm (20), metal thermocouple arm (21), the microwave power coupling mechanism based on two identical MEMS cantilever switch (12) that this degree of coupling is adjustable, it can realize tight coupling 6dB, and two mode of operations of loose coupling 3dB, by having or not driving voltage on drive electrode (15), control the drop-down of cantilever switch and keep, thereby make main transmission line (5) be connected or disconnect with coupled transmission line (7), make the coupled zone of microwave power coupling mechanism serve as theme coupled zone (10) and by-pass coupling (11), or be to be only coupled by mutually close major and minor line, microwave power coupling mechanism isolation termination isolation resistance (19), for absorbing the microwave power at the isolated port place causing due to input port (1) impedance mismatching.
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