CN102427971B - 高效外延化学气相沉积(cvd)反应器 - Google Patents

高效外延化学气相沉积(cvd)反应器 Download PDF

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CN102427971B
CN102427971B CN201080021690.9A CN201080021690A CN102427971B CN 102427971 B CN102427971 B CN 102427971B CN 201080021690 A CN201080021690 A CN 201080021690A CN 102427971 B CN102427971 B CN 102427971B
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乔治·卡米安
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Beamreach Solexel Assets Inc
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Abstract

本发明公开了一种化学气相沉积反应器，其具有改善的化合物利用率和成本效益。本公开的晶片基座可以以堆叠结构用于同时加工多个晶片。本公开的反应器可为逆流耗尽型反应器，其具有均一的膜厚度以及高的化合物利用率。

Description

高效外延化学气相沉积(CVD)反应器
相关申请的交叉引用
本申请要求美国专利申请US 12/759,820和美国临时专利申请US 61/169,139的优先权，两份申请均通过引用整体结合到本文中。
技术领域
本公开涉及外延沉积。更具体地说，本公开涉及硅或其它半导体材料的外延沉积。
背景技术
单晶硅是光电应用中占主导地位的材料。单晶硅太阳能电池的高效率以及材料的丰富性吸引了连续不断的使用和改进。但是晶体硅材料高的加工成本限制了这些太阳能模块的广泛使用。目前，“晶片”（wafering）硅或晶化硅和切割晶片的成本占成品太阳能电池的约40%。如果可能有更直接的制备晶片的方法，那么太阳能电池的成本的降低可取得很大的进展。
现在有各种不同的使单晶硅生长和释放或转移已生长晶片的方法。但不管方法如何，采用的都是外延沉积工艺的成本较低的。
人们最初发展硅外延（epi）沉积用于半导体工业。半导体工业在膜性能和成本方面的要求与太阳能领域的要求几乎是对立的两极。例如，半导体epi膜厚度通常小于5μm(1μm=10-6米)。为了达到太阳能工业中的经济性，每瓦特硅的成本必须保持在$0.25/瓦特或大约$1.00/晶片（假设电池4瓦特）。
用于epi的前体化合物主要是三氯甲硅烷（TCS），不过也可以使用更薄的硅烷（SiH4）膜。每种化合物的外延淀积对设备结构及处理条件都有特殊的要求和需要。基于低成本和丰富度的要求，TCS是太阳能工业首选的化合物。本公开内容将主要针对TCS进行描述，但本领域技术人员将意识到其对硅烷和其它前体化合物的应用。
为了达到太阳能应用需要的经济性，人们研究了工艺成本模型以确定和优化设备的性能。三类成本构成了总成本图：固定成本（FC）、经常成本（RC）和产量成本（YC）（yield cost）。FC由设备采购价格、安装成本和机器人或自动化成本等项目构成。RC大部分由电、气、化合物、操作薪金和维护技师支持构成。YC可理解为生产过程中损失部分的总价值。
为控制太阳能领域所要求的所得到(CoO)数目，必须优化成本图的所有方面。低成本工艺的特征是（按优先的顺序）：1）高生产率，2）高产量，3）低RC以及4）低FC。
设计高生产率设备需要对工艺要求具有良好的理解并将这些要求反应在结构中。高产量需要稳定的工艺和可靠的设备。低RC在成本模型中证明是主要的组成。基于例如当地电力成本或大宗化合物可获得性，RC会影响工厂地址的选择。FC尽管重要，但是其重要性被设备生产率冲淡了。
综上所述，低成本太阳能电池的生产的关键在于高生产率、可靠、高效的反应器。
发明内容
因此，本公开的目的是提供一种CVD反应器，其具有改进的化合物利用率和高产量，并因此降低了成本，提高了效率。
实现低RC需要有效利用化合物。在致力使用较大部分的TCS时，本公开将描述较长的沉积区域。设置较长的沉积区域可使较高比例的TCS沉积。以这种方式，可实现化合物的更高的利用率。通过选择最佳参数（化合物浓度、气体速度、反应维数等），可优化生产率和化合物利用率。本公开的另一个目的是最小化表面而非晶片上的沉积，这对有效化合物利用率也是很重要的。本公开的反应器具有高的晶片面积/反应器表面积比率，这可以使附加损失最小化。
本公开主题的这些和其它优点，以及其他的新特征将通过本文提供的描述变得显而易见。本发明内容并不用于总括本发明的主题，而是简要概述一些本发明主题的功能性。通过研究下面的附图和具体实施方式后，本领域技术人员将清楚了解本文提供的其它***、方法、特征和优点。本说明书包括的所有这种其它***、方法、特征和优点均落入权利要求的范围内。
附图说明
将具体实施方式与附图结合，本公开主题的特征、性质和优点将变得更加清楚，在附图中，相同的附图标记表示相同的特征，其中：
图1显示了晶片基座（susceptor）实施方案的俯视图；
图2A和2B分布显示了晶片基座实施方案的侧视图和放大侧视图；
图3显示了具有两套晶片基座的反应器的实施方案的侧视图；
图4显示了分批堆栈反应器（BSR）实施方案的俯视图；
图5A和5B分别显示了双侧沉积（DSD）基座设置实施方案的侧视图和放大的侧视图；
图6显示了包括基座阵列的实施方案的俯视图；
图7显示了双侧沉积反应器实施方案的侧视图。
具体实施方式
尽管本公开参考具体的实施方案进行描述，但是本领域的技术人员不需要进行不必要的实验就可以将本文的原理应用到其它地方和/或实施方案中。
本公开所指“模板”可视为与“晶片”等同。在本公开的一个实施方案中，在外延附生后，模板可重复使用，用来生长和释放晶硅片。但是外延沉积后模板或晶片的使用在本公开范围以外。在不违背本公开精神的情况下，技术人员应该明白所述模板可以进行的很多的应用。
本公开反应器的创新方面在于晶片基座的设置（晶片是利用其吸收电磁能量并将该能量以热的形式传递给晶片的能力的材料）。虽然基座可经电磁加热，但是灯具和电阻加热也是有效的。
本公开的基座可以是堆叠式的，但是它们不依靠堆叠来提供整体反应器的“构件模块”（building blocks）。本公开的反应器可以是或不是耗尽型（depletion mode）反应器（DMR）。“耗尽型”是指沿气流方向消耗或利用化合物。如图1所示，该方向可以是相反的， 以从一端到另一端使膜的厚度平均。在方向为非反向的实施方案中，可以防止较多化合物沉积在最接近源端口区域中。在前向流动（即从左到右）模式中，端口10包括源端口，端口12包括排放端口；在反向流动模式中，与上述相反。由于该种原因，端口10可称为“源/排放端口10”，端口12可称为“排放/源端口12”。图1、2A和2B分别显示了相同基座设置的不同视图：俯视图、侧视图和细节侧视图。如图2A和2B所示，端口10和12的设计适合用于本公开的具有可堆叠性质的晶片基座。
图1、2A和2B中显示了挡板通道15。这些挡板通道包括TCS或其它种类化合物流过的部分路径。仅在图1中显示的针孔16在外延沉积过程中用于模板提升。
在这些图中，所示的模板20（在图2B中显示）***插袋18（在图1中显示）中。
在不违背本发明精神的情况下，技术人员可改变所示反应器的各种维数。
在该示范性实施方案中，插袋18的厚度为大约6 mm，整个组件的长度为大约50 cm。端口10和12的直径大约为15 mm。
图3显示了反应器30，其包括两套堆叠的基座板，与前面三幅附图中显示的基板类似。图3的反应器为耗尽型反应器。
反应器30包括源/消耗端口40和消耗/源端口42。反应器30的主体（maid body）封闭在石英罩35内。如所显示，反应器30使用灯具36来加热基座板。
在TCS与氢气反应（或还原）过程中产生盐酸（HCl气体）。事实上，如果反应加入额外的H2并能够在较长的区域或时间上扩展，HCl的浓度会继续上升超过反应抑制点并开始蚀刻硅模板。而这通常是要避免的状态，但是硅的蚀刻可用来清理下游消耗通道。在效果上，通过建立足够的HCl水平，可以以自维护模式通过使产生的HCl气体蚀刻不需要的沉积硅操作本公开的反应器。
图4显示了反应器50，其为本公开的分批堆栈反应器（BSR）的一个实施方案。在结构上，基座板堆叠以增加分批负载至几百个晶片（在某些实施方案中）。通过用H2气体冲洗基座外部，保护石英钟罩免于硅沉积。大多数已知的钟罩反应器都不能免受TCS的作用并且需要周期性的清理HCl以除去不需要的沉积硅。该过程会中断生产，从而对每片晶片（即CoO）的成本造成不利影响。
石英钟罩52包围反应器50。在所示实施方案中，反应器50包括用于TCS和H2的独立端口（尽管这不是本公开的必要特征）；在其它实施方案中，TCS和H2可以预混合，并通过相同的端口进料。如图所示，H2源/消耗端口54和TCS源/消耗端口55在反应器的一端，H2消耗/源端口56和TCS消耗/源端口57在另一端。仅在作为源端口时，这些端口有差别。当利用给定端口的抽气能力时，其可以排放出已在反应器内混合的气体。
当气体在合适温度下混合时， H2能够还原TCS。图4显示了分离前体直到每个基座处于使用的点的设置。该方法还可以扩大化合物的利用率并延长运行时间，有利于进一步提高CoO。
在图5A和5B所示的设置中，每块模板的两侧均暴露于工业气体中。该特征可以使两侧均发生沉积，这具有增加化合物利用率和降低每片晶片的epi成本的综合效果。
图5A和5B所示的基座使用时大致类似于图2A和2B中所示的那些，并且可以并入不同类型的反应器构造中。
双侧基座是可堆叠的（如图3实施方案所示），但是它们也可如图6所示设置成矩阵。
图7显示了使用图5A和5B双侧基座的耗尽型反应器的侧视图。其结构大致类似于图3所示的反应器，除了堆叠的基座由双侧基座取代。
本领域技术人员将意识到，除了上述那些特定的实施例，公开的实施方案与各种领域相关。特别是，本领域技术人员不需要进行不必要的实验就可以将任何公开的基座放入任何公开的反应器设置中。
前面示范性实施方案的描述用于使本领域技术人员能够制造或使用要求保护的主题。但是本领域技术人员可以容易的对这些实施方案进行不同改进，并且本文指出的通用原理不需要创新就可应用于其它实施方案中。因此，本公开要求保护的主题并不限制于本文所示的实施方案，而是具有符合本文公开的原理和新特征的最大范围。
本说明书包括的所有这类其它的***、方法、特征和优点均落入权利要求的范围内。

Claims (22)

1.一种用于将化合物沉积于晶片上的反应器，其中所述反应器为耗尽型，所述反应器根据化学气相沉积处理同时地将一化合物沉积到多个晶片的第一表面，所述反应器包括：
双向的第一端口，其位于晶片的第一表面的第一侧并设置为供给或排放化合物；
多个第一挡板通道，每一第一挡板通道连接到所述第一端口，且化合物通过每一第一挡板通道流动至晶片插袋；
多个垂直堆叠的基座板，每一基座板包括将晶片的第一表面暴露于所述化合物的晶片插袋，每一晶片插袋连接到第一挡板通道和一第二挡板通道；所述垂直堆叠的基座板为跨越每一晶片的第一表面的化合物提供一流动路径；
多个第二挡板通道，每一第二挡板通道连接到双向的第二端口，且化合物通过每一第二挡板通道流动至晶片插袋；以及
双向的第二端口，其位于晶片的第一表面的第二侧并设置为供给或排放化合物；
所述双向的第一端口、双向的第二端口、第一挡板通道、第二挡板通道，以及多个垂直堆叠的基座板提供一化合物流动路径；
其中双向的第一端口和双向的第二端口能够以供给模式或排气模式操作，以改变跨越晶片第一表面的化合物的流动。
2.根据权利要求1所述的反应器，进一步包括加热灯具。
3.根据权利要求2所述的反应器，进一步包括石英罩。
4.根据权利要求1所述的反应器，进一步包括石英罩。
5.根据权利要求1所述的反应器，其中所述反应器为分批堆栈反应器且所述垂直堆叠的基座板的每一个包括多个以水平矩阵布置的晶片插袋。
6.根据权利要求1所述的反应器，其中所述双向的第一端口包括具有至少一个TCS源端口和至少一个氢气源端口的多个双向的第一端口，且所述双向的第二端口包括具有至少一个TCS源端口和至少一个氢气源端口的多个双向的第二端口。
7.根据权利要求1-6任一项所述的反应器，其中所述的第一挡板通道、垂直堆叠的基座板、第二挡板通道的数量分别为两个。
8.一种用于将化合物沉积于晶片两个表面上的反应器，其中所述反应器为耗尽型，所述反应器根据化学气相沉积处理同时地将一化合物沉积到多个晶片的第一主表面和第二主表面，所述反应器包括：
双向的第一端口，其位于晶片的第一主表面和第二主表面的第一侧并设置为供给或排放化合物；
多个第一双侧挡板通道，每一第一双侧挡板通道连接到所述第一端口，且化合物通过每一第一双侧挡板通道流动至晶片插袋；
多个垂直堆叠的双侧基座板，其每一个包括将所述晶片的第一主表面和第二主表面暴露于所述化合物的晶片插袋，每一晶片插袋连接到所述第一双侧挡板通道和一第二双侧挡板通道；所述垂直堆叠的双侧基座板为跨越每一晶片的第一主表面的化合物提供一流动路径；
多个第二双侧挡板通道，每一第二双侧挡板通道连接到一双向的第二端口，且化合物通过每一第二双侧挡板通道流动至晶片插袋；以及
双向的第二端口，其位于晶片的第一主表面和第二主表面的第二侧并设置为供给或排放化合物；
所述双向的第一端口、双向的第二端口、第一双侧挡板通道、第二双侧挡板通道，以及多个垂直堆叠的双侧基座板提供一化合物流动路径；
其中双向的第一端口和双向的第二端口能够以供给模式或排气模式操作，以改变跨越晶片第一主表面和第二主表面的化合物的流动。
9.根据权利要求8所述的反应器，进一步包括加热灯具。
10.根据权利要求9所述的反应器，进一步包括石英罩。
11.根据权利要求8所述的反应器，进一步包括石英罩。
12.根据权利要求8所述的反应器，其中所述反应器为分批堆栈反应器且所述垂直堆叠的双侧基座板的每一个包括多个以水平矩阵布置的晶片插袋。
13.根据权利要求8所述的反应器，其中所述双向的第一端口包括具有至少一个TCS源端口和至少一个氢气源端口的多个双向的第一端口，且所述双向的第二端口包括具有至少一个TCS源端口和至少一个氢气源端口的多个双向的第二端口。
14.根据权利要求8-13任一项所述的反应器，其中所述的第一双侧挡板通道、垂直堆叠的双侧基座板、第二双侧挡板通道的数量分别为两个。
15.一种用于晶片表面上硅的耗尽型沉积的方法，包括步骤：
将多个晶片的每一个***一晶片插袋，所述晶片插袋设置在多个垂直堆叠的基座内，所述基座收纳于一罩内；
加热所述的多个晶片；
使第一化合物沿第一方向流过所述晶片的至少一个表面，以将硅沉积到晶片的该表面直至第一化合物沿化合物流动的方向耗尽，第一化合物从第一端口提供并流过在所述垂直堆叠的基座之间形成的空间，第一化合物跨越流过所述晶片的该至少一个表面并通过第二端口排放；以及
使第二化合物沿第二方向流过所述晶片的至少一个表面，以将硅沉积到晶片的该表面直到第二化合物沿化合物流动的方向耗尽，第二化合物从第二端口提供并流过在所述垂直堆叠的基座之间形成的空间，第二化合物跨越所述晶片的该至少一个表面并通过第一端口排放，所述第二方向与所述第一方向相差180度，以及
在硅沉积期间用氢气冲洗基座外部。
16.根据权利要求15所述的方法，其中加热所述晶片的步骤包括使用加热灯具。
17.根据权利要求15所述的方法，其中加热所述晶片的步骤包括使用电阻加热。
18.根据权利要求15所述的方法，其中所述至少一个表面包括第一主表面和与第一主表面相对的第二主表面。
19.根据权利要求15所述的方法，其中所述化合物包括三氯硅烷。
20.根据权利要求16所述的方法，其中所述所述化合物包括三氯硅烷和氢气。
21.根据权利要求15所述的方法，其中所述方法在石英罩内部进行。
22.根据权利要求15-21任一项所述的方法，其中所述的垂直堆叠的基座的数量为两个。
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