CN102420199A - Semiconductor module - Google Patents
Semiconductor module Download PDFInfo
- Publication number
- CN102420199A CN102420199A CN2011102941097A CN201110294109A CN102420199A CN 102420199 A CN102420199 A CN 102420199A CN 2011102941097 A CN2011102941097 A CN 2011102941097A CN 201110294109 A CN201110294109 A CN 201110294109A CN 102420199 A CN102420199 A CN 102420199A
- Authority
- CN
- China
- Prior art keywords
- metallic plate
- resin
- resin body
- circuit board
- semiconductor module
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/4901—Structure
- H01L2224/4903—Connectors having different sizes, e.g. different diameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
The invention relates to a semiconductor module. A resin body (20) is formed into a flat shape which can cover a semiconductor chip (10). A plurality of terminals (31, 33) is electrically connected with the semiconductor chip (10), and protrudes from the resin body (20), so the protruding terminals (31, 33) are welded on a circuit board (130) to form a lead pattern (180). A metal plate (40) is formed into a plate shape and is arranged on a resin surface (21) of the resin body (20). A metal surface (43) of the metal plate (40) is exposed to the outside, and the other metal surface (44) is electrically connected with the semiconductor chip. The metal plate (40) is provided with an extending part (42). The metal plate (40) and the resin body satisfy the following relation: 0.5<=Sm/Sr<=1.0, wherein the Sm refers to the area of the extending part (42), and the Sr refers to the area of the resin body (20).
Description
Technical field
The present invention relates to a kind of semiconductor module, its execution is used for the switching manipulation of drive motor rotation, especially, relates to a kind of semiconductor module that is installed on the circuit board.
Background technology
In recent years, a lot of parts of vehicle are by electric motor operated, and the quantity of motor and electronic control unit thereof has increased thus.A lot of effort of effective inner space of vehicle have been used to increase, so that comfortable space to be provided to the user.Therefore, the space that is preserved for motor and electronic control unit thereof becomes problem.Therefore, making motor and electronic control unit size thereof less is important problem.
For example, in the space of engine chamber or after instrument board, arrange the electronic control unit that is used for the vehicle power steering system.Because the electronic control unit that is used for power steering system is with big electric current (approximately 100A) drive motor, so increased the heat that generates at the switch element place.Therefore, must high heat radiating structure be arranged so that make that this electronic control unit size is less.
For example; Prior art discloses 1 (the open No.2002-083912 of Japan Patent); Prior art discloses 2 (the open No.S57-083746 of Japanese Utility Model) or prior art discloses the improved structure that 3 (the open No.S58-187153 of Japanese Utility Model) disclose a kind of semiconductor module or electronic control unit, to improve the heat-radiating properties of semiconductor module.Disclosed semiconductor module in 1,2 or 3 is disclosed according to above prior art; Heat radiation plate (processing with metal or resin) with surface area bigger than one surface area in the surface of the resin body that covers semiconductor chip is fixed to resin body, thereby the heat that semiconductor chip generates is radiated in the air via this heat radiation plate.
Disclose 1,2 or 3 according to above prior art, do not disclose any content of heat radiation plate with respect to the detailed relative size of resin body.For example, under the little situation of the size of the extension of resin body, in other words, when the surface area of heat radiation plate (extension) was minimum to the ratio of the surface area of resin body, thermal radiation effect maybe be very little at heat radiation plate.On the other hand; When heat radiation plate greatly extends with respect to resin body; Not only the weight of heat radiation plate and material cost possibly increase, but also possibly be difficult to be kept on printed circuit board, install semiconductor module and other space electric or electronic section and assembly.
In addition; 1 to 3 semiconductor module is disclosed according to above prior art; Because each in electronic section and the assembly is so-called THD (via devices) type, so but be used for the performance that these parts and assembly are fixed to the workability of circuit board and are used for volume production is inferior to the part and the assembly of so-called SMD (surface mount device) type.
Summary of the invention
In view of above problem is made the present invention.The object of the present invention is to provide a kind of semiconductor module, according to this semiconductor module, more easily electronic section and assembly are installed to circuit board, and this semiconductor module has the high-heating radiation performance.
For example, according to characteristic of the present invention, semiconductor module is installed to the surface of circuit board.Said semiconductor module has semiconductor chip, resin body and a plurality of terminal.Said semiconductor chip has the function of switching manipulation.Resin body forms tabular, covering said semiconductor chip, and on the two opposite sides of said resin body, has first resin surface and second resin surface.Be electrically connected to semiconductor chip and be welded to the lead pattern that forms at circuit board from the outstanding a plurality of terminals of resin body.
In a plurality of terminals each is electrically connected to source class, the drain and gate of semiconductor chip respectively, makes can to realize not only that through these terminals electric current is to the cut-out of the supply of semiconductor chip or this electric current but also can realize the supply of control signal.
First metal plate shape becomes tabular, and on the two opposite sides of first metallic plate, has first metal surface and second metal surface.Said first metallic plate is provided at first resin surface of resin body and a surface in second resin surface; Make: in first metal surface and second metal surface one is exposed to the outside with respect to one in first resin surface of resin body and second resin surface, and another metal surface is electrically connected to semiconductor chip.According to this characteristic, can be sent to first metallic plate effectively from the heat of semiconductor chip, then via the first metallic plate radiation.First metallic plate has on the direction on the plate surface of first metallic plate with respect to the outward extending extension of resin body.Therefore, via the extension effectively radiation from the heat of semiconductor chip.
Under the situation that makes win metallic plate and resin body satisfied " Sm/Sr＜0.5 "; Wherein, " Sm " is the area on the surface of extension, and " Sr " is the area on the surface of resin body, the problem that possibly exist the effect of the first metallic plate radiations heat energy to become too little.On the other hand, when making win metallic plate and resin body satisfy concerning of " Sm/Sr＞1.0 ", possibly there is weight and material cost problem, and will be difficult to be kept for other electronic section and assembly are installed to the space of circuit board increase.
Therefore, according to the present invention, make the relation of win metallic plate and resin body satisfied " 0.5≤Sm/Sr≤1.0 ".
When satisfying the concerning of " 0.5≤Sm/Sr ", the surface area and the three-dimensional volume (thermal mass) of first metallic plate (said extension 42) can be maintained at the value that is higher than predetermined value respectively.As a result, can send heat effectively via first metallic plate from semiconductor chip.In other words, semiconductor module of the present invention has the high-heating radiation performance.
When satisfying the concerning of " Sm/Sr≤1.0 ", can suppress possibly increasing of weight and material cost, and can easily obtain other electronic section and assembly are installed to the space of circuit board.
According to semiconductor module of the present invention, be installed to part and the part and the assembly that assembly is the SMD type on the surface of circuit board.Therefore, when comparing with assembly with the part of THD type, it is simpler to be used for that part and assembly are installed to the technology of circuit board, but workability and productivity ratio are higher thus.
Description of drawings
According to the following detailed description of carrying out, of the present inventionly above will become clearer with other purpose, feature and advantage with reference to accompanying drawing.In the accompanying drawings:
Figure 1A and Figure 1B schematically show the electronic control unit according to first embodiment of the invention; Wherein, semiconductor module is installed to circuit board, wherein; Figure 1A is the schematic plan view of electronic control unit, and Figure 1B is the sectional view that the line IB-IB in Figure 1A obtains;
Fig. 2 illustrates the sketch map according to the electronic control unit of first embodiment of the invention that is applied to power steering system;
Fig. 3 A to Fig. 3 D schematically shows the semiconductor module of first embodiment of the invention, and wherein, Fig. 3 A is an end view, and Fig. 3 B is the end face view, and Fig. 3 C is an end view, and Fig. 3 D is a bottom view;
Fig. 4 A to Fig. 4 D schematically shows the semiconductor module of comparative example, and wherein, Fig. 4 A is an end view, and Fig. 4 B is the end face view, and Fig. 4 C is an end view, and Fig. 4 D is a bottom view;
Fig. 5 A to Fig. 5 C schematically shows the semiconductor module according to second embodiment of the invention, and wherein, Fig. 5 A is the end face view, and Fig. 5 B is a bottom view, and Fig. 5 C is the sectional view that the semiconductor module of the circuit board that is installed to electronic control unit is shown;
Fig. 6 A to Fig. 6 C schematically shows the semiconductor module according to third embodiment of the invention, and wherein, Fig. 6 A is preparatory face view, and Fig. 6 B is a bottom view, and Fig. 6 C is the sectional view that the semiconductor module of the circuit board that is installed to electronic control unit is shown;
Fig. 7 A to Fig. 7 C schematically shows the semiconductor module according to fourth embodiment of the invention, and wherein, Fig. 7 A is the end face view, and Fig. 7 B is a bottom view, and Fig. 7 C is the sectional view that the semiconductor module of the circuit board that is installed to electronic control unit is shown;
Fig. 8 A to Fig. 8 C schematically shows the semiconductor module according to fifth embodiment of the invention, and wherein, Fig. 8 A is the end face view, and Fig. 8 B is a bottom view, and Fig. 8 C is the sectional view that the semiconductor module of the circuit board that is installed to electronic control unit is shown;
Fig. 9 A to Fig. 9 C schematically shows the semiconductor module according to sixth embodiment of the invention, and wherein, Fig. 9 A is the end face view, and Fig. 9 B is a bottom view, and Fig. 9 C is the sectional view that the semiconductor module of the circuit board that is installed to electronic control unit is shown; And
Figure 10 A and Figure 10 B schematically show the semiconductor module according to seventh embodiment of the invention, and wherein, Figure 10 A is an end view, and Figure 10 B is a bottom view.
Embodiment
To explain the present invention through a plurality of embodiment with reference to accompanying drawing.In all embodiment, provide same numeral, be repeated in this description thereby omit it for same or similar part and/or parts.
With the electronic control unit that semiconductor module 1 at first wherein is installed with reference to Figure 1A, Figure 1B and Fig. 2 explanation.
As shown in Figure 2, electronic control unit (ECU) 110 is applied to the power steering system 100 of vehicle, thus ECU 110 operating motors 101, and motor 101 is used for the auxiliary force of manipulation operation based on generations such as controlling torque signal, vehicle velocity signal.
Shown in Figure 1A and Figure 1B, ECU 110 has board member 120, printed circuit board 130, control section 140, capacitor 150, connector 160 etc.
Printed circuit board 130 (hereafter is a circuit board) is the plate of processing with the epoxy resin (for example FR-4) that glass fiber strengthens.Circuit board 130 forms the almost rectangular shape similar with board member 120, and its external dimensions is less than the external dimensions of board member 120.Circuit board 130 makes that through be fixed to board member 120 through screw 191 surface of circuit board 130 is almost parallel with the surface of board member 120.
The semiconductor module 1 of this embodiment is installed to the surface of opposite side surfaces of conduct and the board member 120 of circuit board 130.That is to say that semiconductor module 1 is the electronic section of SMD type.In ECU 110, four semiconductor modules 1 are installed.
Capacitor 150 also is installed to the surface of the circuit board 130 opposite with board member 120.According to this embodiment, three capacitors 150 are installed among the ECU 110, and wherein, they are arranged with adjusting to a line and with equal intervals.
Except above electronic section and assembly (semiconductor module 1, microcomputer 141, customization IC 142 and capacitor 150), relay 171 and 172, coil 173, by-passed resistor 174 are installed to the surface of the circuit board 130 opposite with board member 120 too.
The lead pattern (not shown) that forms in the lead pattern 180 (Figure 1B) that forms on the PIG terminal 161 of connector 160, GND terminal 162 and the surface of Terminal of motor 163 via circuit board 130 and the inside of circuit board 130 is electrically connected to semiconductor module 1, microcomputer 141, customization IC 142, capacitor 150, relay 171 and 172, coil 173 and by-passed resistor 174 respectively.For example, lead pattern is processed with metallic film (for example copper).
The terminal 31 of semiconductor module 1 (source class end) is welded to lead pattern 180, and lead pattern 180 is connected to PIG terminal 161 (terminal 31 shown in Fig. 3 A to Fig. 3 D is described below).The terminal 33 (gate terminal) of semiconductor module 1 is welded to lead pattern 180, and lead pattern 180 is connected to customization IC 142.In addition, first metallic plate 40 (drain electrode end) of semiconductor module 1 is welded to lead pattern 180, and lead pattern 180 is connected to board member 120 or GND terminal 162.
Control section 140 (microcomputer 141) is sent to the terminal (grid) 33 of each semiconductor module 1 via customization IC 142 with control signal, thereby controls the switching manipulation (Fig. 3 A to Fig. 3 D) of each semiconductor chip 10.As a result, flow through the current controlled of Terminal of motor 163 (promptly passing through the coil windings of motor 101), make motor 101 rotate.As above, control section 140 (microcomputer 141 and customization IC 142) is controlled the switching manipulation of each semiconductor module 1, controls the rotary manipulation of motor 101 thus.
Because relatively large electric current flows through semiconductor module 1 and by-passed resistor 174 during switching manipulation, so in semiconductor module 1 and by-passed resistor 174, generate heat.Its temperature is increased to relative high value.
Shown in Figure 1A and Figure 1B, board member 120 has bossing 121 with the regional corresponding part that wherein is furnished with semiconductor module 1 and by-passed resistor 174, and wherein, bossing 121 is towards circuit board 130 protrusions.Bossing 121 forms the corresponding rectangle row shape of shape with the zone that wherein is furnished with semiconductor module 1 and by-passed resistor 174, shown in the dotted line among Figure 1A.
Shown in Figure 1B, each contact in first metallic plate 40 of each semiconductor module 1 and be welded on circuit board 130 lead pattern 180 that forms.The heat that generates at semiconductor chip 10 (Fig. 3 A and Fig. 3 B) is sent to circuit board 130 via first metallic plate 40 with lead pattern 180 effectively.
The thermal radiation plate 192 and thermal radiation grease 193 of electric insulation are provided between the bossing 121 of board member 120 and circuit board 130.For example, the thermal radiation plate 192 of electric insulation is processed with the electric insulation sheet material that comprises silicon and have a less thermal resistance.Thermal radiation grease 193 for example is to comprise that silicon is as stock and colloid grease with less thermal resistance.
Fill with thermal radiation plate 192 and thermal radiation grease 193 in space between bossing 121 and the circuit board 130, so that the heat in the circuit board 130 (at the heat of semiconductor module 1 generation) can be sent to the bossing 121 of board member 120 effectively.As above, bossing 121 serves as heat sink.
Like the mode similar with first metallic plate 40, the terminal 31 of semiconductor module 1 contacts and is welded to the lead pattern 180 that forms on the circuit board 130 with 33.As above, semiconductor module 1 is welded to lead pattern in a plurality of parts, thereby in the semiconductor module 1 each stably is installed on the circuit board 130.
To explain semiconductor module 1 in more detail with reference to Fig. 3 A to Fig. 3 D.
Shown in Fig. 3 A and Fig. 3 B, semiconductor module 1 has semiconductor chip 10, resin body 20, terminal part 30, first metallic plate 40 etc.
For example, semiconductor chip 10 is transistors of field effect type, such as MOSFET.According to semiconductor chip 10, allow or forbid that the electric current between source class and the grid flows according to the control signal of the grid of waiting to be input to semiconductor chip 10.As above, semiconductor chip 10 has the function of switch element.
Process with metal terminal part 30, and comprise three (first to the 3rd) terminals 31 to 33.
One end of the first terminal 31 is electrically connected to the source class of semiconductor chip 10, and the other end of the first terminal 31 is outstanding from the side surface (the 4th resin surface) 24 of resin body 20.This ledge of the first terminal 31 is towards lower surface (first resin surface) 21 bendings, and the front end of ledge is further crooked towards the direction opposite with resin body 20 then.
One end of second terminal 32 is electrically connected to the drain electrode of semiconductor chip 10 via first metallic plate 40 (following explanation).The other end of second terminal 32 is outstanding from the side surface 24 of resin body 20.
One end of the 3rd terminal 33 is electrically connected to the grid of semiconductor chip 10, and the other end of the 3rd terminal 33 is outstanding from the side surface 24 of resin body 20.With the mode similar with the first terminal 31, the ledge of the 3rd terminal 33 is towards lower surface (first resin surface) 21 bendings, and the front end of ledge is further crooked towards the direction opposite with resin body 20 then.
First metallic plate 40 is processed with metal (for example aluminium), and forms plate shape.First metallic plate 40 has (promptly on its opposition side, forming) respect to one another first metal surface 43 and second metal surface 44.First metallic plate 40 comprises main part 41 and extension 42.Main part 41 is connected to each other on the direction on its plate surface with extension 42.That is to say that it is a member that main part 41 is formed integrally as with extension 42.
Arrange first metallic plate 40 at the lower surface (first resin surface) of resin body 20 21, make the lower surface (first metal surface) 43 of the metallic plate 40 of winning be connected to the following resin surface 21 of resin body 20 continuously.That is to say, on the plane identical, arrange the following metal surface 43 of first metallic plate 40 with the plane of the following resin surface 21 of resin body 20.Therefore, except following metal surface 43, resin body 20 covers the main part 41 of first metallic plate 40.In other words, (first metal surface) 43, the following metal surface of first metallic plate 40 is exposed to the outside with respect to the following resin surface (first resin surface) 21 of resin body 20.
The extension 42 of first metallic plate 40 is not covered by resin body 20, and extends with respect to the side surface (the 3rd resin surface) 23 of resin body 20.In other words, extension 42 is corresponding to the part that is not covered (being exposed to the outside) and extend with respect to resin body 20 by resin body 20 of first metallic plate 40.
The upper surface of first metallic plate 40 (second metal surface) 44 (upper surface of main part 41 or rather) is electrically connected to the drain electrode of semiconductor chip 10.
To explain the size of the various piece of semiconductor module 1 with reference to Fig. 3 C and Fig. 3 D.
Shown in Fig. 3 C, " Lm " refers to the length length of the part of side surface 23 outward extending first metallic plates 40 of resin body 20 (promptly with respect to) of the extension 42 of first metallic plate 40." Lr " refers to from side surface 24 to side surface the distance of 23 resin body 20.According to this embodiment, so make the relation of win metallic plate 40 and resin body 20 satisfied " Lm/Lr ≈ 0.75 ".
" Sm " refers to the area (area of the part of following (first) metal surface 43 of first metallic plate 40) of extension 42, and it is by the hatched grid indication among Fig. 3 D." Sr " refers to the area of following (first) resin surface 21 of resin body 20, and it is by the grid indication of the horizontal and vertical lines among Fig. 3 D.The width of resin body 20 (26 the length from resin surface 25 to resin surface) is the width of extension 42 no better than.Therefore, so make the relation of win metallic plate 40 and resin body 20 satisfied " Sm/Sr ≈ 0.75 ".Or rather, according to this embodiment, " Lm "=6.4 (mm), " Lr "=8.5 (mm).
According to this embodiment, the area of the following metal surface 43 of first metallic plate 40 (being the area of main part 41) is less than the area " Sr " of the following resin surface 21 of resin body 20.
To explain comparative example with reference to Fig. 4 A to Fig. 4 D.
The different length that are the extension 42 of first metallic plate 40 of the semiconductor module 200 of comparative example and the semiconductor module 1 of first embodiment.
" Lm1 " refers to that wherein, " Lm1 " is set at the value of 1.5 (mm) according to the length of the extension 42 of first metallic plate 40 of comparative example in Fig. 4 C.In comparative example, the ratio of " Lm1/Lr " is about 0.18 (Lm/Lr ≈ 0.18).
Therefore, area ratio also is about 0.18 (Sm1/Sr ≈ 0.18)." Sm1 " is the area by the extension 42 of the hatched grid indication among Fig. 4 D." Sr " is the area by the resin body 20 of the grid indication of the horizontal and vertical lines among Fig. 4 D.
According to comparative example, the area of extension 42 is less than the area of first embodiment.Therefore, semiconductor module 200 be used for radiation-emitting semi-conductor chip 10 the effect of heat less than the effect of first embodiment.When with the circuit board of electronic control unit on the operating temperature of the semiconductor module installed when comparing, the operating temperature of the semiconductor module 1 of first embodiment is low almost 20 ℃ than the operating temperature of example frequently.
As stated, according to first embodiment, resin body 20 forms tabular, to cover semiconductor chip 10.Terminal 31 to 33 is electrically connected to semiconductor chip 10, and outstanding with respect to resin body 20.Terminal 31 and 33 is welded to each lead pattern 180 that forms on the circuit board 130 of electronic control unit.Terminal 31 is connected to the source class of semiconductor chip 10.Terminal 33 is connected to the grid of semiconductor chip 10.According to this structure, can be via terminal 31 and 33 pairs of semiconductor chip 10 supply or cut-off currents.First metallic plate 40 forms tabular, and its lower surface (first metal surface) 43 is exposed to the outside with respect to the following resin surface 21 of resin body 20, and its upper surface (second metal surface) 44 is electrically connected to semiconductor chip 10.According to this structure, can be sent to first metallic plate 40 effectively from the heat of semiconductor chip 10.Then, heat can be radiated air via first metallic plate 40.
In addition, according to this embodiment, first metallic plate 40 has extension 42, and it extends with respect to resin body 20 on the direction on plate surface.Thus, can via extension 42 effectively radiation from the heat of semiconductor chip 10.According to this embodiment, first metallic plate 40 and resin body are configured to satisfy the relation of " Sm/Sr ≈ 0.75 ", and wherein, " Sm " is the area of the following metal surface 43 of extension 42, and " Sr " is the area of the following resin surface 21 of resin body 20.
In other words, when satisfying the concerning of " 0.5≤Sm/Sr ", can the surface area and the three-dimensional volume (thermal mass) of first metallic plate 40 (extension 42) be remained on these values higher than predetermined value respectively.Therefore, via first metallic plate 40 heat that generates at semiconductor chip 10 places of radiation effectively.That is to say that the semiconductor module 1 of this embodiment has the high-heating radiation performance.
In addition, when satisfying the concerning of " Sm/Sr≤1.0 ", can suppress the weight of first metallic plate 40 and possibly increasing of cost.Can also easily be kept for electronics and/or electric part and assembly are installed to space on the circuit board 130 of circuit board.
According to this embodiment, first metallic plate 40 and resin body 20 are configured to satisfy the relation of " Sm/Sr=0.75 ".Therefore, it is superimposed with the effect of the increase that is used to suppress weight and manufacturing cost to carry out thermal-radiating effect via first metallic plate 40.In the effect each can increase the biglyyest.
According to the semiconductor module 1 of this embodiment, be installed to part and the part and the assembly that assembly is the SMD type on the surface of circuit board 130.Therefore, when comparing with assembly with the part of THD type, it is simpler to be used for that part and assembly are installed to the technology of circuit board 130, but workability and productivity ratio are higher thus.
According to this embodiment, following (first) resin surface 21 of (first metallic plate 40 is attached to) resin body 20 contacts with circuit board 130.Therefore, following (first) metal surface 43 of first metallic plate 40 can contact with circuit board 130.The extension 42 of first metallic plate 40 is welded to the lead pattern 180 that forms on the circuit board 130.According to this structure, can be sent to circuit board 130 effectively with lead pattern 180 via first metallic plate 40 from the heat of semiconductor chip 10.
In addition, according to this embodiment, first metallic plate, 40 usefulness act on the terminal of the drain electrode of semiconductor chip 10.The terminal 31 and 33 and first metallic plate 40 are welded to the lead pattern that forms on the circuit board 130.Therefore, semiconductor module 1 can stably remain in the position on the circuit board 130.
(second embodiment)
Fig. 5 A to Fig. 5 C illustrates the semiconductor module 2 according to second embodiment of the invention.
According to second embodiment, terminal 31 is with 33 shape and to be used for semiconductor module 2 is installed to the structure of circuit board 130 different with first embodiment.
According to semiconductor module 2, terminal 31 and 33 outstanding with respect to the side surface of resin body 20 24, and in these ledges each is towards 22 bendings of second resin surface.Then, the front end of ledge is further crooked on away from the direction of resin body 20, shown in Fig. 5 C.
Fig. 5 C illustrates the situation that semiconductor module 2 is installed to the circuit board 130 of electronic control unit 110.Semiconductor module 2 is positioned as feasible: the lead pattern 180 that forms on second resin surface 22 of resin body 20 (first resin surface, 21 opposite surfaces that promptly are attached to first metallic plate 40) and the circuit board 130 contacts.The terminal 31 and 33 of semiconductor module 2 is welded to respective lead pattern 180, thereby semiconductor module 2 is installed to the surface of circuit board 130.
Shown in Fig. 5 C, first metallic plate 40 of semiconductor module 2 (first metal surface 43 of first metallic plate 40 or rather) contacts with covering member 194.According to this structure, the drain electrode of semiconductor chip 10 is connected to covering member 194 via first metallic plate 40.In other words, when semiconductor module 2 work, the earth current of semiconductor module 2 flows to covering member 194 via first metallic plate 40.
According to above structure, not only be sent to the bossing 121 of board member 120 from the heat of semiconductor chip 10, but also be sent to covering member 194 via first metallic plate 40 via lead pattern 180 and circuit board 130.And heat finally is radiated air from board member 120 and covering member 194.
Except the structure of above explanation, second embodiment is identical with first embodiment.
(the 3rd embodiment)
Fig. 6 A to Fig. 6 C illustrates the semiconductor module 3 according to third embodiment of the invention.
The semiconductor module 3 of the 3rd embodiment is different with second embodiment to be that it has an add ons.
According to this embodiment, second metal sheet surface 52 (upper surface among Fig. 6 C) of second metallic plate 50 is not electrically connected to semiconductor chip 10.Through the mode identical with second embodiment, when in electronic control unit 110, semiconductor module 3 being installed, second resin surface 22 of resin body 20 contacts with circuit board 130.The lead pattern 180 that forms on first metal sheet surface 51 of second metallic plate 50 and the circuit board 130 contacts.According to this embodiment, the side surface between first metal sheet surface of second metallic plate 50 and second metal sheet surface 51 and 52 is exposed to the outside with respect to the side surface 23 of resin body 20, and wherein, the exposed surface of second metallic plate 50 is welded to lead pattern 180.
Through the mode identical with second embodiment; According to semiconductor module 3; From the heat of semiconductor chip 10 not only via first metallic plate 40 from covering member 194 radiation, but also via bossing 121 radiation of second metallic plate 50, lead pattern 180 and circuit board 130 from board member 120.
Except the structure of above explanation, the semiconductor module 3 of the 3rd embodiment is identical with second embodiment.
Because the 3rd embodiment has second metallic plate 50, therefore can be not only via first metallic plate 40 but also via 50 radiation of second metallic plate from the heat of semiconductor chip 10.Therefore, the thermoradiation efficiency of the 3rd embodiment is higher than second embodiment.
In addition, first metal sheet surface 51 of second metallic plate 50 contacts with lead pattern 180, and second metallic plate 50 is welded to lead pattern 180.According to this structure, can be sent to circuit board 130 effectively with lead pattern 180 via second metallic plate 50 from the heat of semiconductor chip 10.
In addition, because the terminal 31 and 33 and second metallic plate 50 of semiconductor module 3 are welded to lead pattern 180, so semiconductor module 3 stably is positioned on the circuit board 130.
(the 4th embodiment)
Fig. 7 A to Fig. 7 C illustrates the semiconductor module 4 according to fourth embodiment of the invention.
The different shapes that are first metallic plate 40 of the semiconductor module 4 of the 4th embodiment with second embodiment.
First metallic plate 40 has leg portion 421, and it is further extending with respect to an end of the extension 42 of first metallic plate 40 (at an end of the opposite side of main part 41) on second resin surface, 22 directions of resin body 20.The front end of leg portion 421 is further crooked on away from the direction of resin body 20.The front end of leg portion 421 almost is positioned on the same level of second resin surface 22 of resin body 20.
Through the mode identical with second embodiment, when in electronic control unit 110, semiconductor module 4 being installed, second resin surface 22 of resin body 20 contacts with the lead pattern 180 on the circuit board 130.The front end of leg portion 421 is welded to lead pattern 180.The lead pattern 180 that leg portion 421 is welded to is connected to GND terminal 162 or board member 120.Therefore, leg portion 421 (first metallic plate 40) can be with the terminal of the drain electrode that acts on semiconductor chip 10.According to above structure, first metallic plate 40 needn't contact with covering member 194 as second embodiment.
As stated, according to this embodiment, first metallic plate 40 has first metallic plate 40 that extends and be welded to the lead pattern 180 that forms on the circuit board 130 with respect to an end of extension 42 towards circuit board 130.Therefore, the heat from semiconductor chip 10 can be sent to circuit board 130 effectively via first metallic plate 40 (extension 42 and leg portion 421) and lead pattern 180.Then, heat finally is radiated air from circuit board 130.
In addition, according to semiconductor module 4 because the terminal 31 of first metallic plate 40 and 33 and leg portion 421 be welded to lead pattern 180, so semiconductor module 3 stably is positioned on the circuit board 130.
(the 5th embodiment)
Fig. 8 A to Fig. 8 C illustrates the semiconductor module 5 according to fifth embodiment of the invention.
The semiconductor module 5 of the 5th embodiment is different with first embodiment to be that it has an add ons.
According to this embodiment, second metal sheet surface 62 of second metallic plate 60 is electrically connected to the source class of semiconductor chip 10.In addition, terminal 31 is electrically connected to the source class of semiconductor chip 10 via second metallic plate 60.According to this structure, when semiconductor module 5 work, relatively large electric current (source class electric current) flows through second metallic plate 60.As a result, generate heat at second metallic plate, 60 places.Because second metallic plate 60 has the thermal mass of specified quantitative, therefore radiations heat energy effectively.
(the 6th embodiment)
Fig. 9 A to Fig. 9 C illustrates the semiconductor module 6 according to sixth embodiment of the invention.
The different structures that are the structure of first metallic plate 40 and are used for semiconductor module 6 is installed to the circuit board 130 of electronic control unit 110 of the semiconductor module 6 of the 6th embodiment with first embodiment.
The extension 42 of first metallic plate 40 has in vertical direction (thickness direction of extension 42) goes up the through hole 422 through extension 42.
When in electronic control unit 110, semiconductor module 6 being installed, screw 195 (fixture) inserts through through hole 422, and is affixed to the bossing 121 of (screw-in) board member 120.Thus, semiconductor module 6 is firm and stably be fixed to circuit board 130.
According to this embodiment, can be sent to circuit board 130 and board member 120 (bossing 121) via first metallic plate 40 (extension 42) and screw 195 from the heat of semiconductor chip 10.Heat finally is radiated air from board member 120.
In addition, first metallic plate 40 is electrically connected to the drain electrode of semiconductor chip 10.Therefore, when semiconductor module 6 when being fixed to circuit board 130 with metal screw 195, the earth current of semiconductor module 6 (drain current) can flow to the bossing 121 of board member 120 via screw 195.
(the 7th embodiment)
Figure 10 A to Figure 10 C illustrates the semiconductor module 7 according to seventh embodiment of the invention.
The thickness of first metallic plate 40 of the 7th embodiment is different with first embodiment.
In the semiconductor module 7 of the 7th embodiment, " Tm " refers to the thickness of the extension 42 of first metallic plate 40, and " Tr " refers to the thickness of resin body 20.First metallic plate 40 and resin body are configured to satisfy the relation (ratio) of " Tm/Tr ≈ 0.4 ".Or rather, according to this embodiment, " Tm " is 1.9 (mm), and " Tr " is 4.7 (mm), thereby the ratio of " Tm/Tr " is about 0.4.
Except the point of above explanation, the structure of the semiconductor module 7 of this embodiment is identical with first embodiment.
When first metallic plate 40 and resin body 20 are configured to satisfy concerning of " 0.3≤Tm/Tr ", can make the three-dimensional volume (thermal mass) of first metallic plate 40 remain on the value bigger than predetermined value.As a result, can increase the thermal-radiating effect of first metallic plate 40.
On the other hand, when first metallic plate 40 and resin body 20 are configured to satisfy concerning of " Tm/Tr≤0.5 ", can suppress increase and the increase of material cost of the weight of first metallic plate 40.
As above; Be configured to satisfy the result of the relation (ratio) of " Tm/Tr ≈ 0.4 " as first metallic plate 40 and resin body 20, be used to increase the effect of heat-radiating properties and be used to suppress the effect of increase of weight and material cost of first metallic plate superimposed.In addition, each in the effect can increase the biglyyest.
(other embodiment and modification)
When first metallic plate 40 and resin body 20 are configured to satisfy concerning of " 0.5≤Sm/Sr≤1.0 ", can process first metallic plate 40 and the resin body 20 through the size of any kind of and the shape of any kind of.In other words, can form the extension 42 and the resin body 20 of first metallic plate 40 through the shape except rectangular shape.Also can change the thickness of first metallic plate and resin body through variety of way.
Yet, more preferably make: the relation of first metallic plate 40 and resin body 20 satisfied " Sm/Sr=0.75 ".More preferably make: first metallic plate 40 not only satisfies the relation of " 0.5≤Sm/Sr≤1.0 " with resin body 20, but also satisfies the relation of " 0.3≤Tm/Tr≤0.5 ".In addition, when satisfying the concerning of " Tm/Tr=0.4 ", be most preferred.According to this situation, the effect that is used to increase heat-radiating properties is superimposed with the effect of the increase of weight that is used to suppress to be used for first metallic plate and material cost.And each in the effect can increase the biglyyest.
In above first embodiment, the 4th embodiment and the 5th embodiment, first metallic plate 40 is connected to the drain terminal of semiconductor chip 10, and terminal 31 is connected to the source class terminal of semiconductor chip 10.Yet first metallic plate 40 can be connected to the source class terminal of semiconductor chip 10, and terminal 31 can be connected to the drain terminal of semiconductor chip 10.According to this modification, when semiconductor module was worked, the source class electric current flow through first metallic plate 40, and earth current (drain current) flows through terminal 31.
In above embodiment, the terminal 32 of semiconductor module is free of attachment to the lead pattern that forms on (being welded to) circuit board.Yet terminal 32 can be connected to (being welded to) lead pattern, and is used as the drain terminal of semiconductor chip.
More than a plurality of embodiment can combination with one another, only if any infeasible.
The electronic control unit that semiconductor module of the present invention wherein has been installed can not only be applied to power steering system but also be applied to be used to control any other system of the operation of motor.
The present invention should not be subject to above embodiment, and can under the situation that does not break away from its spirit, pass through modified in various manners.
Claims (10)
1. semiconductor module that is installed to the surface of circuit board comprises:
Semiconductor chip (10), it has the function of switching manipulation;
Resin body (20), it covers said semiconductor chip (10), and on the two opposite sides of said resin body (20), has first resin surface (21) and second resin surface (22);
A plurality of terminals (31,33), it is electrically connected to said semiconductor chip (10), and is outstanding from said resin body (20), and is welded to the lead pattern (180) that said circuit board (130) is gone up formation; And
First metallic plate (40) forms tabularly, and on the two opposite sides of said first metallic plate (40), has first metal surface (43) and second metal surface (44),
Said first metallic plate; (40) be provided at said resin body; (20) first resin surface; (21) and second resin surface; (22) surface in; Make: said first metal surface; (43) and second metal surface; (44) one in respect to said resin body; (20) first resin surface; (21) and second resin surface; (22) one in is exposed to the outside; And said first metal surface; (43) and second metal surface; (44) another surface electrical in is connected to said semiconductor chip; (10)
Said first metallic plate (40) has on the surface direction of said first metallic plate (40) with respect to the outward extending extension of said resin body (20) (42),
Wherein, said first metallic plate (40) and said resin body (20) satisfy the relation of " 0.5≤Sm/Sr≤1.0 ",
Wherein, " Sm " is the area on a surface of the said extension of covering (42) in first sheetmetal surface (43) and second sheetmetal surperficial (44) of said first metallic plate (40), and " Sr " is first resin surface (21) of said resin body (20) and the area on the surface that provides said first metallic plate (40) in second resin surface (22).
2. semiconductor module as claimed in claim 1, wherein, said first metallic plate (40) and said resin body (20) satisfy the relation of " Sm/Sr=0.75 ".
3. semiconductor module as claimed in claim 1, wherein,
Said first metallic plate (40) and said resin body (20) satisfy the relation of " 0.3≤Tm/Tr≤0.5 ",
Wherein, " Tm " is the thickness of the extension (42) of said first metallic plate (40), and " Tr " is the thickness of said resin body (20).
4. semiconductor module as claimed in claim 3, wherein,
Said first metallic plate (40) and said resin body (20) satisfy the relation of " Tm/Tr=0.4 ".
5. like claim 1 or 3 described semiconductor modules, wherein,
Said extension (42) has the through hole (422) that on the thickness direction of said extension (42), passes.
6. like claim 1 or 3 described semiconductor modules, also comprise:
Second metallic plate (50,60) forms tabularly, and on the two opposite sides of said second metallic plate (50,60), has first metal sheet surface (51,61) and second metal sheet surface (52,62),
Wherein, Said second metallic plate (50; 60) be provided at first resin surface (21) of said resin body (20) and another surface in second resin surface (22); Make: a surface in said first metal sheet surface (51,61) and said second metal sheet surface (52,62) is exposed to the outside with respect to another surface in first resin surface (21) of said resin body (20) and second resin surface (22).
7. semiconductor module as claimed in claim 6, wherein,
First metal sheet surface (61) of said second metallic plate (60) and another surface electrical in second metal sheet surface (62) are connected to said semiconductor chip (10).
8. semiconductor module as claimed in claim 6, wherein,
Another surface contacts with said circuit board (130) formation in first resin surface (21) of said resin body (20) and second resin surface (22), and
Said second metallic plate (50) is welded at said circuit board (130) and goes up the lead pattern (180) that forms.
9. like claim 1 or 3 described semiconductor modules, wherein,
Another surface contacts with said circuit board (130) formation in first resin surface (21) of said resin body (20) and second resin surface (22), and
Said extension (42) has leg portion (421), and said leg portion (421) extends to said circuit board (130) and is welded at said circuit board (130) and goes up the lead portion (180) that forms.
10. like claim 1 or 3 described semiconductor modules, wherein,
First resin surface (21) of said resin body (20) forms with said circuit board (130) with surface described in second resin surface (22) and contacts, and
The said extension (42) of said first metallic plate (40) is welded at said circuit board (130) and goes up the lead portion (180) that forms.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010215601A JP5454438B2 (en) | 2010-09-27 | 2010-09-27 | Semiconductor module |
| JP2010-215601 | 2010-09-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102420199A true CN102420199A (en) | 2012-04-18 |
| CN102420199B CN102420199B (en) | 2015-04-22 |
Family
ID=45944532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110294109.7A Expired - Fee Related CN102420199B (en) | 2010-09-27 | 2011-09-27 | Semiconductor module |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5454438B2 (en) |
| CN (1) | CN102420199B (en) |
| MY (1) | MY153576A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019146402A1 (en) * | 2018-01-25 | 2019-08-01 | 三菱電機株式会社 | Power conversion device and method for manufacturing power conversion device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846104A (en) * | 1994-05-31 | 1996-02-16 | Motorola Inc | Surface installation electronic device and its preparation |
| JP2000031351A (en) * | 1998-07-09 | 2000-01-28 | Toshiba Corp | Semiconductor device |
| US20020050635A1 (en) * | 2000-10-26 | 2002-05-02 | Rohm Co., Ltd. | Integrated circuit device |
| JP2004146529A (en) * | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | Method of manufacturing semiconductor device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06349980A (en) * | 1993-06-03 | 1994-12-22 | Canon Inc | Semiconductor element |
-
2010
- 2010-09-27 JP JP2010215601A patent/JP5454438B2/en not_active Expired - Fee Related
-
2011
- 2011-09-26 MY MYPI2011004567A patent/MY153576A/en unknown
- 2011-09-27 CN CN201110294109.7A patent/CN102420199B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0846104A (en) * | 1994-05-31 | 1996-02-16 | Motorola Inc | Surface installation electronic device and its preparation |
| JP2000031351A (en) * | 1998-07-09 | 2000-01-28 | Toshiba Corp | Semiconductor device |
| US20020050635A1 (en) * | 2000-10-26 | 2002-05-02 | Rohm Co., Ltd. | Integrated circuit device |
| JP2004146529A (en) * | 2002-10-23 | 2004-05-20 | Renesas Technology Corp | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5454438B2 (en) | 2014-03-26 |
| JP2012069887A (en) | 2012-04-05 |
| MY153576A (en) | 2015-02-27 |
| CN102420199B (en) | 2015-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102387695B (en) | Electronic control unit | |
| JP6278695B2 (en) | Electronic control unit and electric power steering apparatus using the same | |
| CN104752390B (en) | Electronic control unit and electric power-assisted steering apparatus with electronic control unit | |
| CN101958291B (en) | Electronic control unit | |
| CN102569221B (en) | Electronic control unit | |
| CN104742960A (en) | Electronic control unit and electric power steering apparatus having the same | |
| US20140254116A1 (en) | Semiconductor device | |
| JP2012209414A (en) | Electronic substrate and inverter-integrated electric compressor | |
| CN104039073A (en) | Electronic control unit | |
| CN104021932B (en) | Electronic unit and electronic control unit | |
| CN107112654B (en) | Module-terminal board connection structure and connection method | |
| US10070563B2 (en) | Electronic control unit | |
| JP2008004953A (en) | Semiconductor module, and power converting device using the same | |
| US10653020B2 (en) | Electronic module and method for producing an electronic module | |
| CN102420199A (en) | Semiconductor module | |
| JP5116426B2 (en) | Electrical junction box | |
| US11634170B2 (en) | Electric power-steering control device and electronic unit | |
| CN105609474B (en) | Electronic device with heat conducting component | |
| JP2005289243A (en) | Air volume control module for air-conditioner of automobile | |
| CN202564281U (en) | Semiconductor module | |
| CN215528886U (en) | Inverter device | |
| JP4169907B2 (en) | Electronic control unit | |
| US20230253278A1 (en) | Semiconductor module with integrated current sensor | |
| JP2002033433A (en) | Semiconductor device and manufacturing method thereof | |
| JPS5910796Y2 (en) | Cooling structure for electrical equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |