CN102412294B - 用作静电防护结构的器件 - Google Patents
用作静电防护结构的器件 Download PDFInfo
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- CN102412294B CN102412294B CN 201010290452 CN201010290452A CN102412294B CN 102412294 B CN102412294 B CN 102412294B CN 201010290452 CN201010290452 CN 201010290452 CN 201010290452 A CN201010290452 A CN 201010290452A CN 102412294 B CN102412294 B CN 102412294B
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- 230000003068 static effect Effects 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- 238000002955 isolation Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000005421 electrostatic potential Methods 0.000 claims 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 description 29
- 230000015556 catabolic process Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000006378 damage Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1012—Base regions of thyristors
- H01L29/1016—Anode base regions of thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7436—Lateral thyristors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (5)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010290452 CN102412294B (zh) | 2010-09-25 | 2010-09-25 | 用作静电防护结构的器件 |
US13/241,079 US8981482B2 (en) | 2010-09-25 | 2011-09-22 | ESD protection structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201010290452 CN102412294B (zh) | 2010-09-25 | 2010-09-25 | 用作静电防护结构的器件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102412294A CN102412294A (zh) | 2012-04-11 |
CN102412294B true CN102412294B (zh) | 2013-09-11 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 201010290452 Active CN102412294B (zh) | 2010-09-25 | 2010-09-25 | 用作静电防护结构的器件 |
Country Status (2)
Country | Link |
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US (1) | US8981482B2 (zh) |
CN (1) | CN102412294B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103378087B (zh) * | 2012-04-28 | 2016-02-24 | 无锡华润上华半导体有限公司 | 静电释放保护结构及其制造方法 |
CN103050510B (zh) * | 2012-06-04 | 2015-04-08 | 上海华虹宏力半导体制造有限公司 | Rfldmos工艺中的esd器件及其制造方法 |
CN103579333B (zh) * | 2012-07-20 | 2016-06-08 | 上海华虹宏力半导体制造有限公司 | Mos静电保护器件 |
CN103681839A (zh) * | 2012-09-10 | 2014-03-26 | 上海华虹宏力半导体制造有限公司 | Nldmos器件及制造方法 |
US8648417B1 (en) * | 2012-10-01 | 2014-02-11 | O2Micor, Inc. | LDMOS transistors with improved ESD capability |
CN104282665B (zh) * | 2013-07-12 | 2017-04-05 | 上海华虹宏力半导体制造有限公司 | 高压静电保护结构 |
CN103354230B (zh) * | 2013-07-12 | 2015-10-21 | 江苏艾伦摩尔微电子科技有限公司 | 高维持电压的静电放电防护tvs器件 |
CN104916631B (zh) * | 2014-03-11 | 2020-01-03 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
CN105826371B (zh) * | 2015-01-05 | 2018-11-27 | 无锡华润上华科技有限公司 | 高压p型横向双扩散金属氧化物半导体场效应管 |
KR102513081B1 (ko) | 2016-07-08 | 2023-03-24 | 삼성전자주식회사 | 반도체 장치 |
CN107887375B (zh) * | 2016-09-29 | 2021-11-09 | 联华电子股份有限公司 | 半导体静电放电保护元件 |
KR20190140220A (ko) | 2018-06-11 | 2019-12-19 | 에스케이하이닉스 주식회사 | 정전기 방지 회로를 구비하는 반도체 집적 회로 장치 및 그 제조방법 |
CN109037208B (zh) * | 2018-08-02 | 2019-11-15 | 湖南师范大学 | 提高失效电压的双向假栅深阱静电保护器件及其制作方法 |
CN112736078B (zh) * | 2019-10-28 | 2024-05-24 | 上海积塔半导体有限公司 | 基于bcd工艺的pnp型高压esd器件及ldmos |
CN113540075B (zh) * | 2021-07-16 | 2023-10-13 | 长鑫存储技术有限公司 | 静电保护器件 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7326998B1 (en) * | 2002-11-14 | 2008-02-05 | Altera Corporation | Effective I/O ESD protection device for high performance circuits |
CN101414630A (zh) * | 2007-10-15 | 2009-04-22 | 天钰科技股份有限公司 | 横向扩散金属氧化物晶体管 |
CN101771077A (zh) * | 2008-12-30 | 2010-07-07 | 世界先进积体电路股份有限公司 | 具静电放电保护的水平扩散金属氧化物半导体晶体管元件 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000042658A1 (de) * | 1999-01-15 | 2000-07-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Esd-schutztransistor |
JP4850387B2 (ja) * | 2002-12-09 | 2012-01-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7106568B2 (en) * | 2004-08-27 | 2006-09-12 | United Microelectronics Corp. | Substrate-triggered ESD circuit by using triple-well |
TWI358813B (en) * | 2008-04-21 | 2012-02-21 | Vanguard Int Semiconduct Corp | Trig modulation electrostatic discharge (esd) prot |
US8723257B2 (en) * | 2008-12-15 | 2014-05-13 | United Microelectronics Corp. | ESD protection device having reduced equivalent capacitance |
US20110068365A1 (en) * | 2009-09-22 | 2011-03-24 | Richtek Technology Corporation | Isolated SCR ESD device |
-
2010
- 2010-09-25 CN CN 201010290452 patent/CN102412294B/zh active Active
-
2011
- 2011-09-22 US US13/241,079 patent/US8981482B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7326998B1 (en) * | 2002-11-14 | 2008-02-05 | Altera Corporation | Effective I/O ESD protection device for high performance circuits |
CN101414630A (zh) * | 2007-10-15 | 2009-04-22 | 天钰科技股份有限公司 | 横向扩散金属氧化物晶体管 |
CN101771077A (zh) * | 2008-12-30 | 2010-07-07 | 世界先进积体电路股份有限公司 | 具静电放电保护的水平扩散金属氧化物半导体晶体管元件 |
Also Published As
Publication number | Publication date |
---|---|
CN102412294A (zh) | 2012-04-11 |
US8981482B2 (en) | 2015-03-17 |
US20120074497A1 (en) | 2012-03-29 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131225 |
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Effective date of registration: 20131225 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |