CN102403257B - 改善超级结器件深沟槽刻蚀边界形貌的方法 - Google Patents
改善超级结器件深沟槽刻蚀边界形貌的方法 Download PDFInfo
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- CN102403257B CN102403257B CN201010280509.8A CN201010280509A CN102403257B CN 102403257 B CN102403257 B CN 102403257B CN 201010280509 A CN201010280509 A CN 201010280509A CN 102403257 B CN102403257 B CN 102403257B
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- silicon nitride
- deep groove
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- silicon
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- 238000000034 method Methods 0.000 title claims abstract description 75
- 238000005530 etching Methods 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000000227 grinding Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 54
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 42
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 38
- 239000000377 silicon dioxide Substances 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000007792 gaseous phase Substances 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- 238000003701 mechanical milling Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Ceramic Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201010280509.8A CN102403257B (zh) | 2010-09-14 | 2010-09-14 | 改善超级结器件深沟槽刻蚀边界形貌的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201010280509.8A CN102403257B (zh) | 2010-09-14 | 2010-09-14 | 改善超级结器件深沟槽刻蚀边界形貌的方法 |
Publications (2)
Publication Number | Publication Date |
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CN102403257A CN102403257A (zh) | 2012-04-04 |
CN102403257B true CN102403257B (zh) | 2014-02-26 |
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CN201010280509.8A Active CN102403257B (zh) | 2010-09-14 | 2010-09-14 | 改善超级结器件深沟槽刻蚀边界形貌的方法 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448703B (zh) * | 2014-08-27 | 2019-03-19 | 中芯国际集成电路制造(上海)有限公司 | 一种刻蚀方法 |
CN105990090A (zh) * | 2015-01-29 | 2016-10-05 | 北大方正集团有限公司 | 一种深沟槽的硅外延填充方法 |
CN106024703A (zh) * | 2016-05-18 | 2016-10-12 | 上海华虹宏力半导体制造有限公司 | 一种改善rfldmos深沟槽金属填充形貌的方法 |
CN107946311B (zh) * | 2017-11-21 | 2020-09-25 | 长江存储科技有限责任公司 | 控制3d nand闪存结构中沟道关键尺寸的方法 |
CN108257864A (zh) * | 2018-01-12 | 2018-07-06 | 上海华虹宏力半导体制造有限公司 | 晶圆处理方法 |
CN108597982A (zh) * | 2018-01-12 | 2018-09-28 | 上海华虹宏力半导体制造有限公司 | 晶圆处理方法 |
CN109767980B (zh) * | 2019-01-22 | 2021-07-30 | 上海华虹宏力半导体制造有限公司 | 超级结及其制造方法、超级结的深沟槽制造方法 |
CN111430233A (zh) * | 2020-04-02 | 2020-07-17 | 长江存储科技有限责任公司 | 刻蚀方法 |
CN111785625A (zh) * | 2020-06-30 | 2020-10-16 | 上海华虹宏力半导体制造有限公司 | 超级结器件的工艺方法 |
CN113506734A (zh) * | 2021-06-09 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | 深沟槽刻蚀方法 |
Family Cites Families (2)
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JP5476689B2 (ja) * | 2008-08-01 | 2014-04-23 | 富士電機株式会社 | 半導体装置の製造方法 |
US7807577B2 (en) * | 2008-08-21 | 2010-10-05 | Promos Technologies Pte. Ltd. | Fabrication of integrated circuits with isolation trenches |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Applicant before: Shanghai Huahong NEC Electronics Co., Ltd. |
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