CN102400107A - Magnetron sputtering source and magnetron sputtering device - Google Patents
Magnetron sputtering source and magnetron sputtering device Download PDFInfo
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- CN102400107A CN102400107A CN2010102813291A CN201010281329A CN102400107A CN 102400107 A CN102400107 A CN 102400107A CN 2010102813291 A CN2010102813291 A CN 2010102813291A CN 201010281329 A CN201010281329 A CN 201010281329A CN 102400107 A CN102400107 A CN 102400107A
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Abstract
The invention relates to a magnetron sputtering source and magnetron sputtering device. The magnetron sputtering source comprises a target, a magnet, a fixed plate and a power supply, wherein, the magnet is arranged on the fixed plate, the fixed plate is connected with the power supply, the power supply is used for driving the fixed plate to rotate around its central shaft, the target is arranged parallel to the central shaft of the fixed plate, and the target moves relative to the fixed plate. According to the invention, by the relative motion of the target and the fixed plate which is provide with the magnet, the magnetic field generated by the magnet can scan every position of the target to adjust the movement track of secondary electrons and increase the collision frequency of the secondary electrons and argon atoms, and then the argon atoms can be fully ionized to generate more argon ions, thus the sputtering utilization rate and sputtering uniformity of the target in the process that the argon ions bombard the target.
Description
Technical field
The present invention relates to magnetron sputtering technique, particularly a kind of controlled sputtering source and magnetron sputtering equipment.
Background technology
In semi-conductor industry unicircuit manufacturing, adopt magnetron sputtering (Magnetron Sputtering) technology more, be mainly used in the deposition of mfs such as aluminium, copper, to constitute metallic contact, metal interconnecting wires etc.
In the technology, magnetron sputtering process can be: the electronics in the processing chamber to the substrate motion, with the ar atmo collision, makes ar atmo ionization obtain the argon ion and the secondary electron of positively charged in flying to the process of substrate under electric field action; Wherein, argon ion obtains momentum in the process of the target direction accelerated motion with negative potential, and the bombardment target makes target generation sputter, to generate sputtering particle; Secondary electron is under the effect in electric field and the magnetic field that adds the magnet generation, and its movement locus is similar to a cycloid, and secondary electron is obtaining new argon ion and new secondary electron along continuing the collision ar atmo in the process of its orbiting motion with ionization; Moreover the argon ion bombardment target generates neutral target atom or molecular migration in the sputtering particle to silicon chip surface, and through sedimentary mode in the silicon chip surface cohesion to form film, this film has and the essentially identical component of target; And the tail gas or other impurity that by the argon ion bombardment target time, are produced can be taken away by vacuum pump.
But in above-mentioned technology; Because the relative position of target and magnet is relatively-stationary; The magnetic field that magnet produced can't be uniformly distributed in whole target sputter face; Thereby influence the secondary electron movement locus, reduce secondary electron with the ar atmo collision frequency so that the generation quantity of argon ion on the low side in, feasible do not have enough argon ions to bombard the target as sputter face, causes the sputter utilization ratio of target relatively low and the sputter homogeneity is relatively poor.
Summary of the invention
The purpose of the embodiment of the invention provides a kind of controlled sputtering source and magnetron sputtering equipment, to solve in the prior art because the position relative fixed of target and magnet, thereby cause the technical problem that utilization ratio is relatively low and the sputter homogeneity is relatively poor of target.
For addressing the above problem, the embodiment of the invention provides a kind of controlled sputtering source, wherein, comprising: target, magnet, retaining plate and propulsion source;
Said magnet is arranged on the said retaining plate;
Said retaining plate is connected in said propulsion source, and this propulsion source is used to drive said retaining plate around self hub rotation;
Said target and said retaining plate are concentricity, and axle laterally arranges, and said target and the operation relatively of said retaining plate do.
Wherein, magnet comprises at least one block of magnet, and said at least one block of magnet distributes at said retaining plate unevenly
Wherein, said target and said retaining plate all rotate around said hub, have velocity contrast between said target and the said retaining plate.
Wherein, in said target and the said retaining plate one rotates around said hub, and another is static.
Wherein, said target is circular target or annular target.
Wherein, the target of said target logical circular cone structure in being.
Wherein, the angular range of said target as sputter face and self hub is between the 30-90 degree.
Wherein, said target is fixed on the backboard, and said backboard is connected with heating installation, is used to control said target temperature.
Further, controlled sputtering source also comprises another propulsion source, and this another propulsion source is connected in said target, is used to drive said target around self hub rotation.
The embodiment of the invention also provides a kind of magnetron sputtering equipment, comprising: processing chamber, vacuum pump and the controlled sputtering source that adopts above-mentioned any one.
The present invention has following beneficial effect:
Technical scheme provided by the present invention; Retaining plate and target through being fixed with magnet do relative motion; The magnetic field scanning that can make magnet within a certain period of time and produced is to each position of target; The movement locus of adjustment secondary electron to be increasing secondary electron and ar atmo collision frequency, so make ar atmo fully ionization producing more argon ion, thereby improved the sputter utilization ratio and the sputter homogeneity of the target of argon ion in bombarding the target process.
Description of drawings
Fig. 1 is the structural representation of controlled sputtering source first specific embodiment provided by the invention;
Fig. 2 A is the structural representation of controlled sputtering source second specific embodiment provided by the invention;
Fig. 2 B is the sectional view of B-B direction among Fig. 2 A;
Fig. 3 is the vertical view of controlled sputtering source the 3rd specific embodiment provided by the invention;
Fig. 4 is the vertical view of controlled sputtering source the 4th specific embodiment provided by the invention;
Fig. 5 is the vertical view of controlled sputtering source the 5th specific embodiment provided by the invention;
Fig. 6 A is the stereographic map of target in controlled sputtering source the 6th specific embodiment provided by the invention;
Fig. 6 B is the vertical view of target in controlled sputtering source the 6th specific embodiment provided by the invention;
Fig. 6 C is the sectional view of target C-C direction among Fig. 6 B; And
Fig. 7 is the structural representation of embodiment of the invention magnetron sputtering equipment specific embodiment.
Embodiment
Through accompanying drawing and embodiment, the technical scheme of the embodiment of the invention is done detailed description further below.
Fig. 1 is the structural representation of controlled sputtering source first specific embodiment provided by the invention.As shown in Figure 1, embodiment of the invention controlled sputtering source comprises target 101, magnet, retaining plate 103 and propulsion source 104; Wherein, magnet is fixedly installed on the retaining plate 103, and magnet can comprise polylith magnet 102, and polylith magnet 102 anisotropically is distributed on the retaining plate 103; Target 101 laterally arranges with retaining plate 103 concentricity axles, and target 101 all can be around hub rotation separately, the plane parallel of the sputter face of target 101 and retaining plate 103 with retaining plate 103; In the practical application; Target 101 can be metallicses such as copper, gold or iron, also can be nonmetallic substances such as silicon, zinc selenide, because the probability of target 101 centers generation sputter is lower; Can target 101 be set to annular; Thereby saved the raw material of target 101, avoided the waste of target 101 raw materials, reduced cost.
Moreover retaining plate 103 also is connected with propulsion source 104, but propulsion source 104 drive fixing plates 103 rotate around hub, and then the target 101 that makes concentricity axle laterally arrange does relative motion with retaining plate 103; In the practical application, target 101 also can be connected with another propulsion source, is used to drive target 101 around self hub rotation;
Wherein, the relative movement of target 101 and magnet 102 specifically can be:
When magnet 102 rotatablely moves with retaining plate 103; Target 101 can keep stationary state; Also can be around the rotation of self hub, but its speed of rotation and retaining plate 103 are unequal around the speed that self hub rotates, and purpose is to make between target 101 and the magnet 102 to have velocity contrast;
When the retaining plate 103 that is installed with magnet 102 keeps static, can drive target 101 around self hub rotation, so that have velocity contrast between target 101 and the magnet 102 through propulsion source such as motor.
The relative movement of above-mentioned target 101 and magnet 102; Can make the sputter face of the scanned equably target 101 in magnetic field that magnet 102 is produced; And because electric field acts on secondary electron simultaneously with the magnetic field that is uniformly distributed in target 101 sputter face in the present embodiment; The movement locus that can adjust secondary electron to be to increase the collision frequency of secondary electron and ar atmo, makes near target 101 sputter face ar atmo by abundant ionization, to produce more argon ion; And, can improve the sputter utilization ratio and the sputter homogeneity of target 101 effectively through more argon ion bombardment target 101.
In the present embodiment; Retaining plate and target through being fixed with magnet do relative motion; A large amount of magnet need be set, the magnetic field that just can make magnet within a certain period of time and produced scans each position of target equably, with the movement locus of adjustment secondary electron; Increase the chance of secondary electron and ar atmo collision; Fully near the ar atmo the ionization target as sputter face to be to produce more argon ion, makes more argon ion bombardment target, to improve the sputter utilization ratio and the sputter homogeneity of target.
Fig. 2 A is the structural representation of controlled sputtering source second specific embodiment provided by the invention.Target 101 among Fig. 2 A dots, and the circumference that is distributed in the different radii on the retaining plate 103 is represented with solid line; And among following Fig. 3, Fig. 4 and Fig. 5, target 101 dots equally, and the circumference of the different radii on the retaining plate 103 representes that with solid line magnet 102 is fixed on the circumference of the different radii on the retaining plate 103.Shown in Fig. 2 A; Target 101 in the present embodiment is an annular, and magnet 102 is fixedly installed on the retaining plate 103, and wherein 2 blocks of magnet 102 are arranged on that radius is on the circumference of r1 on the retaining plate 103; Other 2 blocks of magnet 102 are arranged on that radius is on the circumference of r2 on the retaining plate 103; Wherein, r1 is less than the interior ring radius R 1 of target 101, and r2 is greater than the outer shroud radius R 2 of target 101.Fig. 2 B is the sectional view of B-B direction among Fig. 2 A; The magneticline of force in controlled sputtering source B-B cross section distributes shown in Fig. 2 B; When the hub of retaining plate 103 around self rotates a circle, the magnetic field that the 4 blocks of magnet 102 on the retaining plate 103 produce also will rotate a circle around target 101, in the cycle of this circumferential motion; The sputter face of target 101 is scanned in the magnetic field of 4 magnet 102 generations equably; Increase the chance of secondary electron and ar atmo collision, go out more argon ion with near the ionization sputter face of target 101, fully near the ar atmo ionization target 101 sputter face is to produce more argon ion; Make more argon ion bombardment target 101, to improve the sputter utilization ratio and the sputter homogeneity of target 101.
Fig. 3 is the vertical view of controlled sputtering source the 3rd specific embodiment provided by the invention.As shown in Figure 3,7 blocks of magnet 102 are fixedly installed on the retaining plate 103, and wherein 2 blocks of magnet 102 radius of being arranged on retaining plate 103 is on the circumference of r1; The radius that 2 blocks of magnet 102 is arranged on retaining plate 103 is on the circumference of r2; The radius that other has 3 blocks of magnet 102 to be arranged on retaining plate 103 is on the circumference of r3, and wherein, r1 is less than the interior ring radius R 1 of annular target 101; R2 is greater than the outer shroud radius R 2 of annular target 101, and the scope of r3 is R1＜r3＜R2.
Fig. 4 is the vertical view of controlled sputtering source the 4th specific embodiment provided by the invention, and Fig. 5 is the vertical view of controlled sputtering source the 5th specific embodiment provided by the invention.Like Fig. 4, shown in Figure 5; In practical application, can need quantity that feelings will be provided with magnet 102 and magnet 102 distributing position according to sputtering target material 101 actual, usually under the condition at retaining plate 103; Magnet 102 right and wrong on retaining plate 103 are equally distributed; When retaining plate 103 rotates a circle around hub, the magnetic field that the magnet 102 on the retaining plate 103 produces will be scanned the surface of target 101 equably, increase the chance that electronics and ar atmo collide; Go out more argon ion with near the ionization sputter face of target 101; Fully near the ar atmo ionization target 101 sputter face to be to produce more argon ion, makes more argon ion bombardment target 101, to improve the sputter utilization ratio and the sputter homogeneity of target 101.When retaining plate 103 rotates around hub; Target 101 also can rotate around hub under the drive of propulsion source such as motor; The sense of rotation of target 101 and magnet 102 can be identical or opposite; When sense of rotation was identical, the speed of rotation of target 101 and magnet 102 big or small unequal made between the speed of the two circumferential motion to have velocity contrast.
In the present embodiment; The quantity that magnet can be set according to the practical situation of sputtering target material with and the position on retaining plate, the retaining plate that is fixed with magnet rotates a circle around the hub of target, the magnetic field that magnet produces will be scanned the sputter face of target equably; Increase the chance of electronics and ar atmo collision; Go out more argon ion with near the ionization sputter face of target, fully near the ar atmo ionization target 101 sputter face to be to produce more argon ion, makes more argon ion bombardment target; With the sputter utilization ratio and the sputter homogeneity of raising target, thus the quality of raising deposit film.
Fig. 6 A is the stereographic map of target in controlled sputtering source the 6th specific embodiment provided by the invention, and Fig. 6 B is the vertical view of target in controlled sputtering source the 6th specific embodiment provided by the invention, and Fig. 6 C is the sectional view of target C-C direction among Fig. 6 B.Shown in Fig. 6 A, 6B and 6C; In embodiments of the present invention; The logical frustum of a cone in being shaped as of target 101, along in the cross section of C-C direction on the target 101 of the logical frustum of a cone be ladder structure, the scope of the angle theta of the sputter face of target 101 or frustum of a cone bus and self hub is between the 30-90 degree; With the area of the sputter face that increases target 101, improve the sputter utilization ratio and the sputter homogeneity of target 101.
In practical application, the target shape can also be annular, circle or square etc., and fixedly the backboard of target can be connected with heating installation, with the temperature of control target, thereby can improve the sputter utilization ratio and the sputter homogeneity of target.
Fig. 7 is the structural representation of magnetron sputtering equipment provided by the invention.As shown in Figure 7; Magnetron sputtering equipment comprises controlled sputtering source 10, processing chamber 20 and vacuum pump; Tail gas or other impurity that vacuum pump is produced when being used for extracting processing chamber 20 by argon ion bombardment target 101 reduce being deposited on the foreign matter content in the on-chip film, have improved the quality of deposit film; Controlled sputtering source 10 and processing chamber 20 fixed installations; There is velocity contrast in the controlled sputtering source that controlled sputtering source 10 can adopt the foregoing description to provide between retaining plate 103 in the controlled sputtering source 10 and the target 101, so that the magnetic field energy that the magnet 102 on the retaining plate 103 produces scans the sputter face of target 101 equably; Increase the chance of electronics and ar atmo collision; Fully near the ar atmo ionization target 101 sputter face produces more argon ion, makes more argon ion bombardment target 101, helps improving the sputter utilization ratio and the sputter homogeneity of target 101.
In the present embodiment; Retaining plate and target through being fixed with magnet do relative motion; The magnetic field that magnet produces will be scanned the sputter face of target equably; Go out more argon ion with near the ionization sputter face of target, make argon ion each position on the whole surface of sputtering target material equably, the homogeneity the when utilization ratio of raising target and sputter.
It is understandable that above embodiment only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (10)
1. a controlled sputtering source is characterized in that, comprising: target, magnet, retaining plate and propulsion source;
Said magnet is arranged on the said retaining plate;
Said retaining plate is connected in said propulsion source, and this propulsion source is used to drive said retaining plate around self hub rotation;
Said target and said retaining plate are concentricity, and axle laterally arranges, and said target and the operation relatively of said retaining plate do.
2. controlled sputtering source according to claim 1 is characterized in that magnet comprises at least one block of magnet, and said at least one block of magnet distributes at said retaining plate unevenly.
3. controlled sputtering source according to claim 1 is characterized in that, said target and retaining plate all rotate around said hub, have velocity contrast between said target and the retaining plate.
4. controlled sputtering source according to claim 1 is characterized in that, in said target and the said retaining plate one rotates around said hub, and another is static.
5. controlled sputtering source according to claim 1 is characterized in that, said target is circular target or annular target.
6. controlled sputtering source according to claim 1 is characterized in that, the target of said target logical circular cone structure in being.
7. controlled sputtering source according to claim 6 is characterized in that, the angular range of said target as sputter face and self hub is between the 30-90 degree.
8. controlled sputtering source according to claim 1 is characterized in that, also comprises another propulsion source, and said another propulsion source is connected in said target, is used to drive said target around self hub rotation.
9. controlled sputtering source according to claim 1 is characterized in that said target is fixed on the backboard, and said backboard is connected with heating installation, is used to control said target temperature.
10. a magnetron sputtering equipment is characterized in that comprising: any described controlled sputtering source among processing chamber, vacuum pump and the employing claim 1-8.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102813291A CN102400107A (en) | 2010-09-13 | 2010-09-13 | Magnetron sputtering source and magnetron sputtering device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010102813291A CN102400107A (en) | 2010-09-13 | 2010-09-13 | Magnetron sputtering source and magnetron sputtering device |
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| CN102400107A true CN102400107A (en) | 2012-04-04 |
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| CN2010102813291A Pending CN102400107A (en) | 2010-09-13 | 2010-09-13 | Magnetron sputtering source and magnetron sputtering device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103147056A (en) * | 2013-03-26 | 2013-06-12 | 长春科纳光电技术有限公司 | Moving field vacuum coating magnetron sputtering source |
| CN103668091A (en) * | 2012-09-19 | 2014-03-26 | 上海新产业光电技术有限公司 | Rotation plane magnetron sputtering target and motion for improving target material sputtering uniformity |
| CN103985666A (en) * | 2013-02-07 | 2014-08-13 | 中芯国际集成电路制造(上海)有限公司 | Annular silicon deep hole and method for preparing annular silicon deep hole electrode |
| CN104746031A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A sputtering system |
| CN109957781A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | The vertical compound film system continuous magnetron sputtering production line of vehicle glass |
| CN110144558A (en) * | 2019-04-29 | 2019-08-20 | 河南东微电子材料有限公司 | A kind of magnetic-controlled sputtering coating equipment |
| CN110643961A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | Semiconductor device and using method thereof |
| CN110643962A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1606795A (en) * | 2001-11-14 | 2005-04-13 | 应用材料有限公司 | Magnet array in conjunction with rotating magnetron for plasma sputtering |
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2010
- 2010-09-13 CN CN2010102813291A patent/CN102400107A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1606795A (en) * | 2001-11-14 | 2005-04-13 | 应用材料有限公司 | Magnet array in conjunction with rotating magnetron for plasma sputtering |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668091A (en) * | 2012-09-19 | 2014-03-26 | 上海新产业光电技术有限公司 | Rotation plane magnetron sputtering target and motion for improving target material sputtering uniformity |
| CN103985666A (en) * | 2013-02-07 | 2014-08-13 | 中芯国际集成电路制造(上海)有限公司 | Annular silicon deep hole and method for preparing annular silicon deep hole electrode |
| CN103147056A (en) * | 2013-03-26 | 2013-06-12 | 长春科纳光电技术有限公司 | Moving field vacuum coating magnetron sputtering source |
| CN104746031A (en) * | 2013-12-29 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A sputtering system |
| CN104746031B (en) * | 2013-12-29 | 2017-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of sputtering system |
| CN109957781A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | The vertical compound film system continuous magnetron sputtering production line of vehicle glass |
| CN110144558A (en) * | 2019-04-29 | 2019-08-20 | 河南东微电子材料有限公司 | A kind of magnetic-controlled sputtering coating equipment |
| CN110144558B (en) * | 2019-04-29 | 2021-06-11 | 河南东微电子材料有限公司 | Magnetron sputtering coating equipment |
| CN110643961A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | Semiconductor device and using method thereof |
| CN110643962A (en) * | 2019-09-20 | 2020-01-03 | 深圳市晶相技术有限公司 | Semiconductor device |
| CN110643961B (en) * | 2019-09-20 | 2024-02-06 | 深圳市晶相技术有限公司 | Use method of semiconductor device |
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Application publication date: 20120404 |