CN110643961B

CN110643961B - Use method of semiconductor device

Info

Publication number: CN110643961B
Application number: CN201910894285.0A
Authority: CN
Inventors: 林信南; 游宗龙; 刘美华; 李方华; 児玉晃; 板垣克則
Original assignee: Shenzhen Jing Xiang Technologies Co ltd
Current assignee: Shenzhen Jing Xiang Technologies Co ltd
Priority date: 2019-09-20
Filing date: 2019-09-20
Publication date: 2024-02-06
Anticipated expiration: 2039-09-20
Also published as: CN110643961A

Abstract

The invention provides a use method of semiconductor equipment, which comprises the following steps: placing a substrate on a tray of a carrier; vacuumizing the transition cavity until the transition cavity enters a vacuum state; the control rod drives the first carrying platform and the second carrying platform to move along a preset path so that the substrate sequentially passes through the transition cavity, the conveying cavity, the cleaning cavity, the preheating cavity and the growth cavity to finish film coating of the substrate; placing the substrate on a second carrying platform, and driving the second carrying platform to move along the opposite direction of the preset path by a control rod until the second carrying platform contacts with a cooling plate so as to cool the second carrying platform and the substrate; the control rod drives the second carrying platform to move until the distance between the second carrying platform and the cooling plate reaches a preset distance, and then vacuum breaking treatment is carried out on the transition cavity. The semiconductor device has a simple structure and can improve the uniformity of the coating film.

Description

Use method of semiconductor device

Technical Field

The invention relates to the field of semiconductors, in particular to a use method of semiconductor equipment.

Background

With the continuous progress of integrated circuit production technology, the integration level of circuit chips is greatly improved. Currently, the number of transistors integrated in a chip has reached a remarkable number of tens of millions, and signal integration of such a large number of active devices requires as many as ten or more layers of high density metal interconnect layers for connection. Therefore, as an important process for preparing the metal interconnection layer, a physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technique is widely used.

In the microelectronic product industry, the magnetron sputtering technology is one of the important means for producing integrated circuits, liquid crystal displays, thin film solar cells, LEDs and other products, and plays a great role in the industrial production and scientific fields. In recent years, the increasing demand of high quality products in the market has prompted enterprises to continuously improve magnetron sputtering equipment.

The magnetron sputtering equipment that uses always includes a plurality of cavitys, and interrelationship between each cavity for magnetron sputtering equipment structure is complicated, and work efficiency is low, and film formation quality is relatively poor, can't satisfy the demand of market to high quality product.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, the present invention provides a method for using a semiconductor device, so as to simplify the structure of the semiconductor device, improve the working efficiency, and improve the uniformity of the plating film.

To achieve the above and other objects, the present invention provides a method for using a semiconductor device, including:

placing a substrate on a tray of a carrier, wherein the carrier is arranged in a transition cavity, the transition cavity is arranged in front of a growth cavity, the carrier is divided into a first carrier and a second carrier, and the tray is placed on the first carrier;

Vacuumizing the transition cavity until the transition cavity enters a vacuum state, wherein an air extraction opening and an air exhaust opening are formed in one side of the transition cavity;

the control rod drives the first carrying platform and the second carrying platform to move along a preset path so that the substrate sequentially passes through the transition cavity, the conveying cavity, the cleaning cavity, the preheating cavity and the growing cavity to finish coating of the substrate;

placing the substrate on the second carrying platform, wherein the control rod drives the second carrying platform to move along the opposite direction of the preset path until the control rod drives the second carrying platform to contact with the cooling plate so as to cool the second carrying platform and the substrate;

and the control rod drives the second carrying platform to move until the distance between the second carrying platform and the cooling plate reaches a preset distance, and then the transition cavity is subjected to vacuum breaking treatment.

In an embodiment, the top of the growth cavity is rotatably provided with a target, a magnet is arranged above the target, the magnet is of an arc structure or a rectangular structure, the magnet is connected with a driving mechanism, the driving mechanism drives the magnet to rotate and reciprocate up and down, the magnet rotates around a central shaft of the target, and the rotating speed of the magnet is different from that of the target.

In an embodiment, the magnetron sputtering device further comprises a control unit, wherein the control unit is used for driving the base to ascend in the process of magnetron sputtering so as to keep the distance between the target and the base unchanged.

In an embodiment, the first carrier and the second carrier are connected to a supporting plate, the supporting plate is connected to a control rod, one end of the control rod is located outside the transition cavity, and the control rod drives the supporting plate to ascend and/or descend.

In an embodiment, the central portion of the base is raised relative to the edge, the substrate is disposed on the central portion of the base, a portion of the substrate covers and is spaced apart from the edge region, and there is no direct contact between the base and the substrate at the edge of the substrate.

In an embodiment, when the vacuumizing treatment is performed, two air inlets are arranged on the side wall of the growth cavity, the two air inlets are staggered, and the two air inlets are respectively connected with an air inlet pipeline.

In one embodiment, the cooling plate is secured to the transition chamber by a plurality of brackets prior to the breaking vacuum process.

The invention provides a use method of semiconductor equipment, which simplifies the structure of the semiconductor equipment and ensures the vacuum tightness of the whole semiconductor equipment by arranging the transition cavity in front of the growth cavity, thereby improving the film forming quality and the film forming uniformity.

Drawings

Fig. 1: a schematic diagram of a growth chamber is provided in this embodiment.

Fig. 2: another schematic view of the base in this embodiment.

Fig. 3: the back side of the base in this embodiment is schematically shown.

Fig. 4: a schematic diagram of the heater in this embodiment.

Fig. 5: another schematic diagram of the heater in this embodiment.

Fig. 6: in this embodiment, a schematic diagram of the temperature measuring device is provided.

Fig. 7: a schematic of the magnet in this embodiment.

Fig. 8: another schematic illustration of the magnet in this embodiment.

Fig. 9: another schematic illustration of the magnet in this embodiment.

Fig. 10: a schematic view of the reflective plate in this embodiment is shown.

Fig. 11: a schematic view of the clamp in this embodiment.

Fig. 12: a schematic diagram of the cooling device in this embodiment.

Fig. 13: the air inlet in this embodiment is schematically shown.

Fig. 14: a schematic diagram of the air intake duct in this embodiment.

Fig. 15: in this embodiment, the bottom of the air intake duct is schematically shown.

Fig. 16: another schematic view of the air inlet in this embodiment.

Fig. 17: another schematic view of the air inlet in this embodiment.

Fig. 18: another schematic view of the air inlet in this embodiment.

Fig. 19: another schematic view of the air inlet in this embodiment.

Fig. 20: a schematic diagram of the semiconductor device is presented in this embodiment.

Fig. 21: a schematic diagram of the transition chamber in this embodiment.

Fig. 22: a schematic diagram of the cooling plate in this embodiment.

Fig. 23: a schematic diagram of the base in this embodiment.

Fig. 24: in this embodiment, a schematic diagram of the stage and the tray is shown.

Fig. 25: a schematic diagram of the cleaning chamber in this embodiment.

Fig. 26: in this embodiment, a schematic diagram of the lifting and rotating mechanism is shown.

Fig. 27: another schematic diagram of the cleaning chamber in this embodiment.

Fig. 28: a schematic diagram of the bushing and coil assembly in this embodiment.

Fig. 29: in this embodiment, a schematic diagram of the preheating chamber is provided.

Fig. 30: a schematic diagram of the heater in this embodiment.

Fig. 31: a schematic diagram of the heating coil in this embodiment.

Fig. 32: in this embodiment, a schematic diagram of the temperature measuring point is shown.

Fig. 33: the usage method of the semiconductor device in this embodiment is shown in the flow chart.

Fig. 34: analytical chart of aluminum nitride coating in this example.

Fig. 35: electron microscope images of aluminum nitride films in this example.

Fig. 36: swing curve of aluminum nitride film in this example.

Detailed Description

Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

The following description sets forth numerous specific details, such as process chamber configurations and material systems, in order to provide a thorough understanding of embodiments of the present invention. It will be apparent to one skilled in the art that embodiments of the invention may be practiced without these specific details. In other instances, well-known features, such as specific diode configurations, are not described in detail so as not to obscure the embodiments of the invention. In addition, it should be understood that the various embodiments shown in the figures are illustrative and not necessarily drawn to scale. Moreover, other arrangements and configurations may not be explicitly disclosed in the embodiments herein, but are still considered to be within the spirit and scope of the present invention.

Referring to fig. 1, the present embodiment provides a semiconductor apparatus 100, and the semiconductor apparatus 100 includes a growth chamber 110, a susceptor 111, a target 123, and a magnet 122. The susceptor 111 is disposed in the growth chamber 110, and the susceptor 111 may be disposed at a bottom end of the growth chamber 110, and a plurality of substrates 112 may be allowed to be placed on the susceptor 111, for example, four or six or more or less substrates 112 may be placed, and in this embodiment, one substrate 112 is disposed on the susceptor 111. In some embodiments, the diameter of the base 111 may range, for example, from 200mm to 800mm, and still, for example, from 400 mm to 600mm. In some embodiments, the base 111 is sized, for example, 2-12 inches, for example, 4 inches, 6 inches, 8 inches, 10 inches, 12 inches, or other size. The susceptor 111 may be formed from a variety of materials including silicon carbide or graphite coated with silicon carbide. In some embodiments, the base 111 comprises a silicon carbide material and has a surface area of 2000 square centimeters or more, such as 5000 square centimeters or more, and such as 6000 square centimeters or more. In this embodiment, the substrate 112 may include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper, and/or aluminum gallium nitride, and the substrate 112 may also be, for example, soda lime glass and/or high silicon glass. In general, the substrate 112 may be composed of the following: materials having compatible lattice constants and coefficients of thermal expansion, substrates compatible with III-V materials grown thereon, or substrates thermally stable and chemically stable at III-V growth temperatures. The dimensions of the substrate 112 may range in diameter from 50mm to 100mm (or more). In some embodiments, the substrate 112 is sized, for example, 2-12 inches, for example, 4 inches, 6 inches, 8 inches, 10 inches, 12 inches, or other size. In the present embodiment, the substrate 112 is, for example, a silicon substrate, and a metal compound film, for example, an aluminum nitride film or a gallium nitride film, for example, a (002) -oriented aluminum nitride film, may be formed on the silicon substrate, for example. The base 111 is further connected to a driving unit 113, the driving unit 113 is connected to a control unit (not shown), the driving unit 113 is used for driving the base 111 to ascend or descend, the driving unit 113 may employ a driving device such as a servo motor or a stepper motor, and the control unit is used for controlling the driving unit 113 to drive the base 111 to ascend during the magnetron sputtering process, so that the distance between the target 123 and the base 111 is always kept constant by a predetermined value, and the predetermined value may be set to an optimal value capable of obtaining a desired process result such as film uniformity, deposition rate, and the like according to specific needs. Therefore, by controlling the driving unit 113 to drive the susceptor 111 to rise by means of the control unit during the magnetron sputtering so that the target base pitch is always kept at an optimum value, the film uniformity and deposition rate can be improved, and thus the process quality can be improved. The control unit can adopt an upper computer, a PLC or the like. In some embodiments, the base 111 may also be connected to a rotation unit for rotating the base 111 during film deposition, further improving the thickness uniformity of the plating film, and improving the stress uniformity of the plating film.

It is worth noting that in some embodiments, the semiconductor apparatus 100 may also include, for example, a load lock chamber, a loadlock, and optionally additional MOCVD reaction chambers (not shown) for a number of applications.

In one embodiment, the substrate is selected from the group consisting of, but not limited to, sapphire, siC, si, diamond, liAlO ₂ ZnO, W, cu, gaN, alGaN, alN, soda lime/high silicon glass, substrates having matched lattice constants and coefficients of thermal expansion, substrates compatible with or treated (engineered) according to nitride material grown on the substrate, substrates thermally and chemically stable at the desired nitride growth temperature, and unpatterned or patterned substrates. In one embodiment, the target is selected from the group consisting of, but not limited to, al-containing metals, alloys, and compounds, such as Al, alN, alGa, al ₂ O ₃ Etc., and the target may be doped with group II/IV/VI elements to improve layer compatibility and device performance. In one embodiment, the sputtering process gas may include, but is not limited to, for example, N ₂ ，NH ₃ ，NO ₂ Nitrogen-containing gas such as NO and inert gas such as Ar, ne, kr, etc.

In some embodiments, the semiconductor devices of the present invention may relate to devices and methods for forming high quality buffer layers and III-V layers that may be used to form possible semiconductor components, such as radio frequency components, power components, or other possible components.

Referring to fig. 2, in some embodiments, a middle portion of the base 111 is convex with respect to the edge, and the substrate 112 is disposed on the middle portion of the base 111 such that a portion of the substrate 112 covers and is spaced apart from the edge region. At the edge of the substrate 112, there is no direct contact between the susceptor 111 and the substrate 112, which is believed to reduce contact cooling of the substrate 112 by the susceptor 111. The substrate 112 is heated by ion bombardment throughout the deposition process, and since the substrate 112 is in thermal contact with the middle portion of the susceptor 111, the middle portion of the substrate 112 is cooled by the susceptor 111, and the edge of the substrate 112 is not directly contact-cooled, and thus is subjected to a higher temperature. This makes the edges of the film more stretchable, again acting as an overall change in stress on the film. In the present embodiment, the substrate 112 is, for example, a silicon substrate or silicon carbide, and a metal compound film, for example, an aluminum nitride film or a gallium nitride film, for example, a (002) -oriented aluminum nitride film, may be formed on the silicon substrate, for example.

Referring to fig. 3-4, fig. 3 shows a back surface of the base 111, a heater is disposed on the back surface of the base 111, wherein the heater includes a plurality of heating electrodes 126 and a heating coil 127, and a temperature measuring point 128 is disposed near the heating electrodes 126. In the present embodiment, a plurality of heating electrodes 126 are connected to one heating coil 127. In this embodiment, the heating coil 127 is specifically designed, for example, the heating coil 127 includes a first portion and a second portion, where the first portion and the second portion are symmetrically connected with respect to a center of the heating coil 127, and the first portion includes a first arc edge 127a, a second arc edge 127b and a third arc edge 127c sequentially from outside to inside, and the first arc edge 127a, the second arc edge 127b and the third arc edge 127c may be in concentric circles. One end of the first arc edge 127a is connected with one end of the second arc edge 127b, the other end of the second arc edge 127b is connected with the third arc edge 127c, and the first part is connected with the second part through the third arc edge 127c to form a circular heating coil 127. The other end of the first arc edge 127a is connected to the heating electrode 126, and after the plurality of heating electrodes 126 are connected to an external power source, the heating coil 127 starts to heat the susceptor 111. The present embodiment can ensure uniformity of heating of the susceptor 111 by such a heating coil 127, and thus can ensure uniformity of temperature of the substrate 112. The heating coil 127 may be disposed on a pyrolytic boron nitride substrate, for example. In some embodiments, the shape and number of turns of the heating coil 127 may be adjusted to further improve the uniformity of heating. In this embodiment, seven heating electrodes 126 are provided on the back surface of the susceptor 111, and in other embodiments, 8 or more heating electrodes 126 may be provided in order to improve the uniformity of heating.

Referring to fig. 5, in some embodiments, to further improve the heating uniformity of the base 111, the heating coil 127 may be adjusted, for example, the heating coil 127 is formed by bending an enamel wire 127d, and the cross section of the enamel wire 127d may be circular, square or flat. The winding number of turns of the enamel wire 127d may be adjusted according to actual circumstances, or the heating coil 127 may be provided in an asymmetric shape, or the enamel wire may be wound in other shapes.

Referring to fig. 3 and 6, in the present embodiment, a temperature measuring point 128 is further disposed near the heating electrode 126, and the temperature measuring point 128 is connected to a temperature measuring device, and in the present embodiment, the temperature measuring device includes a detecting circuit 129a and a temperature collecting module 129b connected in sequence. The detecting circuit 129a is composed of two conductors of different materials, and one end (working end) of the detecting circuit 129a is contacted with the temperature measuring point 128 to generate a thermoelectric signal. The temperature acquisition module 129b is configured to receive a thermoelectric signal through a first detection point and a second detection point at the other end (free end) of the detection loop 129a, and calculate a temperature of the temperature measurement point 128 according to the thermoelectric signal. Since the detecting circuit 129a is composed of two conductors of different materials, the thermoelectric signal affects the potential difference between the first detecting point and the second detecting point, and the temperature collecting module 129b calculates the temperature of the temperature measuring point 128 by calculating the potential difference between the first detecting point and the second detecting point. In this embodiment, the temperature measuring device may be a thermocouple, for example. In some embodiments, other thermometers may also be used to measure the temperature on the base 111, such as an infrared thermometer may also be used to measure the temperature on the base 111. In this embodiment, the temperature condition of each position of the base 111 can be known in real time through the temperature measuring device, so that the temperature of the base 111 can be ensured to be in a uniform and stable state, and the substrate 112 on the base 111 can be ensured to be in a uniform and stable temperature environment.

Referring to fig. 1, in the present embodiment, a target 123 is disposed on top of a growth chamber 110, the target 123 is electrically connected to a sputtering power source (not shown), and during magnetron sputtering, the sputtering power source outputs sputtering power to the target 123, so that plasma formed in the growth chamber 110 etches the target 123, and the sputtering power source may include a dc power source, an intermediate frequency power source or a radio frequency power source. The target 123 has at least one surface portion composed of a material to be sputter deposited on the substrate 112 disposed on the susceptor 111. In some embodiments, when forming a buffer layer of AlN, for example, the buffer layer mayAn AlN-containing buffer layer is formed using a substantially pure aluminum target that is sputtered using a plasma that includes an inert gas (e.g., argon) and a nitrogen-containing gas. In some embodiments, after loading one or more epitaxially ready substrates 112 into growth chamber 110, a continuous AlN film is deposited on substrates 112 by using an aluminum-containing target and a nitrogen-containing process gas. In some embodiments, target 123 may be formed of a material selected from, but not limited to, the group of: substantially pure aluminum, aluminum-containing alloys, aluminum-containing compounds (e.g. AlN, alGa, al) ₂ O ₃ ) And aluminum-containing targets doped with group II/IV/VI elements to improve layer compatibility and device performance. The process gases used during the sputtering process may include, but are not limited to, nitrogen-containing gases, such as nitrogen (N) ₂ ) Ammonia (NH) ₃ ) Nitrogen dioxide (NO) ₂ ) Nitrogen Oxide (NO), etc., inert gases such as argon (Ar), neon (Ne), krypton (Kr), etc. In some embodiments, dopant atoms may be added to the deposited film by doping the target material and/or delivering dopant gas to the generated sputtering plasma to adjust the electrical, mechanical, and optical properties of the deposited PVD AlN buffer layer, for example, to make the film suitable for fabricating a group III nitride device thereon. In some embodiments, the thickness of the thin film (e.g., alN buffer layer) formed in the growth chamber 110 is between 0.1-1000 nm.

Referring to fig. 1, in the present embodiment, the magnet 122 is located above the target 123, and the magnet 122 rotates around the central axis of the target 123, for example, the magnet 122 rotates around the central axis of the target 123 by 90 ° or 180 ° or 360 ° or any angle, or the magnet 122 may rotate around the central axis of the target 123 by any angle. In this embodiment, the magnet 122 is connected to a driving mechanism, and the driving mechanism drives the magnet 122 to rotate and simultaneously can also reciprocate up and down. The driving mechanism comprises a first motor 114, a transmission rod 115, a second motor 116 and a lifting assembly. The first motor 114 is connected to the second motor 116 through a transmission rod 115, the first motor 114 is, for example, a servo motor or a stepper motor, the transmission rod 115 is, for example, a screw rod, and the second motor 116 is, for example, a rotary servo motor, so that the first motor 114 can drive the second motor 116 to reciprocate up and down through the transmission rod 115, and the first motor 114 drives the transmission rod 115 to rotate forward or backward to reciprocate the second motor 116. In this embodiment, the lifting assembly comprises an outer shaft 118 and an inner shaft 119, the inner shaft 119 being arranged in the outer shaft 118, the inner shaft 119 allowing movement along the outer shaft 118, while the outer shaft 118 is arranged on the growth chamber 110, part of the inner shaft 119 being arranged in the growth chamber 110, a fixing means 121 being further arranged at one end of the inner shaft 119, a magnet 122 being fixed to one end of the inner shaft 119 by means of the fixing means 121, while sealing means 120 being further arranged around the outer shaft 118 in contact with the growth chamber 110, a vacuum seal being achieved by means of the sealing means 120, which sealing means 120 may be for example a sealing ring. In this embodiment, the second motor 116 is connected to the inner shaft 119 through the output shaft 117, the output shaft 117 is partially located in the outer shaft 118, the second motor 116 can drive the inner shaft 119 to rotate through the output shaft 117, and meanwhile, the first motor 114 drives the second motor 116 to reciprocate up and down through the transmission rod 115, so that when the first motor 114 and the second motor 116 are simultaneously turned on, the inner shaft 119 can reciprocate up and down and simultaneously perform rotational movement, and accordingly, the magnet 122 on the inner shaft 119 can be driven to perform corresponding movement. The inner shaft 119 may reciprocate only up and down when the first motor 114 is turned on and the second motor 116 is turned off. The inner shaft 119 may only perform a rotational movement when the first motor 114 is turned off and the second motor 116 is turned on. Whereby the operator may choose to switch on and/or off the first motor 114 and/or the second motor 116 depending on the implementation.

In some implementations, the target 123 may remain stationary while the magnet 122 is in rotational motion, or may rotate about its central axis, but there is a speed differential between the target 123 and the magnet 122. When the magnet 122 rotates, the target 123 may be driven to rotate around its own central axis by a power source such as a motor so that there is a speed difference between the target 123 and the magnet 122. The relative motion of the target 123 and the magnet 122 can make the magnetic field generated by the magnet 122 scan across the sputtering surface of the target 123 uniformly, and since the electric field and the magnetic field uniformly distributed on the sputtering surface of the target 123 act on the secondary electrons simultaneously in the embodiment, the motion track of the secondary electrons can be adjusted to increase the collision times of the secondary electrons and the argon atoms, so that the argon atoms near the sputtering surface of the target 123 are ionized sufficiently to generate more argon ions; and the sputtering utilization rate and sputtering uniformity of the target 123 can be effectively improved by bombarding the target 123 with more argon ions, and the quality and uniformity of the deposited film are further improved.

Referring to fig. 7, in the present embodiment, the magnet 122 includes a first portion, a second portion and a plurality of third portions, and the third portions are connected between the first portion and the second portion. The first part comprises a first magnetic unit 1221, the second part comprises a second magnetic unit 1222, a third magnetic unit 1223 and a fourth magnetic unit 1224, and the third part comprises a fifth magnetic unit 1225, a sixth magnetic unit 1226 and a seventh magnetic unit 1227. In the present embodiment, both ends of the first portion are connected to one end of the third portion, respectively, specifically, both ends of the first magnetic unit 1221 are connected to the third portion, and more specifically, both ends of the first magnetic unit 1221 are connected to the fifth magnetic unit 1225, respectively. Two ends of the second portion are respectively connected to the other end of the third portion, wherein two ends of a fourth magnetic unit 1224 of the second portion are connected to one end of a third magnetic unit 1223, the other end of the third magnetic unit 1223 is connected to the second magnetic unit 1222, and meanwhile the third magnetic unit 1223 is obliquely arranged between the second magnetic unit 1222 and the fourth magnetic unit 1224, so that the fourth magnetic unit 1224 is recessed inwards to form a recess. It should be noted that the second portion may have a symmetrical structure, i.e. the second magnetic unit 1222 and the third magnetic unit 1223 are symmetrical about the center of the fourth magnetic unit 1224, and further, the length of the second portion is greater than the length of the first portion. The third part includes a fifth magnetic unit 1225, a sixth magnetic unit 1226, and a seventh magnetic unit 1227 connected in sequence, the fifth magnetic unit 1225 is further connected to the first magnetic unit 1221, and the seventh magnetic unit 1227 is further connected to the second magnetic unit 1222. Meanwhile, the slopes of the fifth magnetic unit 1225, the sixth magnetic unit 1226 and the seventh magnetic unit 1227 become larger in sequence, that is, the slope of the seventh magnetic unit 1227 is larger than the slope of the sixth magnetic unit 1226, and the slope of the sixth magnetic unit 1226 is larger than the slope of the fifth magnetic unit 1225, and it should be noted that the third portions are symmetrical about the central axes of the first portion and the second portion. The present embodiment is formed by splicing a plurality of magnetic units into a symmetrical ring-shaped magnet 122, and when the magnet 122 is stationary, an arc-shaped magnetic field is formed, and when the magnet 122 rotates around the target 123, a uniform magnetic field is formed. The uniform magnetic field can provide sputtering uniformity of the target material, thereby realizing uniformity of the coating.

Referring to fig. 8, in some embodiments, the magnet 122 may further have an arc structure, the magnet 122 includes a first magnetic unit 1221, a second magnetic unit 1222, and a plurality of third magnetic units 1223, the first magnetic unit 1221 is connected to the second magnetic unit 1222 through the third magnetic unit 1223, wherein the first magnetic unit 1221 and the second magnetic unit 1222 are, for example, arc-shaped, the first magnetic unit 1221 and the second magnetic unit 1222 have the same arc-shaped structure, and the third magnetic unit 1223 is connected between the first magnetic unit 1221 and the second magnetic unit 1222 and is symmetrical about a central axis of the first magnetic unit 1221 and the second magnetic unit 1222. When the magnet 122 is stationary, an arc-shaped magnetic field is formed, and when the magnet 122 rotates around the target 123, a uniform magnetic field can be formed. The uniform magnetic field can provide sputtering uniformity of the target material, thereby realizing uniformity of the coating.

Referring to fig. 9, in some embodiments, the magnet 122 may further have an approximately rectangular structure, the magnet 122 includes a plurality of first magnetic units 1221 disposed opposite to each other and a plurality of second magnetic units 1222 disposed opposite to each other, where the first magnetic units 1221 are connected to the second magnetic units 1222, the first magnetic units 1221 may have an arc structure, the first magnetic units 1221 may be recessed inward or outward, the plurality of first magnetic units 1221 may also have an arc structure recessed inward or outward at the same time, and the plurality of first magnetic units 1221 may also include different arc structures. The magnet 122 may have a symmetrical structure or an asymmetrical structure, and may form an arc-shaped magnetic field when the magnet 122 is stationary, and a uniform magnetic field when the magnet 122 rotates around the target 123. The uniform magnetic field can provide sputtering uniformity of the target material, thereby realizing uniformity of the coating.

Referring to fig. 10, in some embodiments, the growth chamber 110 may include an outer wall 110a and an inner wall 110b, the inner wall 110b is disposed in the outer wall 110a, and the inner wall 110b is fixed in the outer wall 110a by a plurality of bolts, so that the outer wall 110a and the inner wall 110b form a ring structure, and the ring structure may slow down heat dissipation when the semiconductor device 100 is operated. The inner wall 110b is further provided with a plurality of reflective plates, for example, the inner wall 110b is provided with a first reflective plate 111a and a second reflective plate 111b sequentially from inside to outside, the first reflective plate 111a and the second reflective plate 111b are sequentially attached, and when the deposition work is performed, the base 111 is in a high temperature state, and the radiation heat can be timely isolated by arranging the plurality of reflective plates on the inner wall 110b, so that the heat can be prevented from being dissipated outwards. The first reflecting plate 111a and the second reflecting plate 111b are circularly disposed on the inner wall 110 b. The first reflecting plate 111a may be composed of a single thermal insulation material or composed of a plurality of thermal insulation materials, and the second reflecting plate 111b may be composed of a single thermal insulation material or composed of a plurality of thermal insulation materials. The present embodiment provides two reflective sheets on the inner wall 110b, and in some embodiments may provide 3 or 4 or more or less reflective sheets.

Referring to fig. 10 to 11, in the present embodiment, a plurality of clips 132 are disposed on the inner wall 110b of the growth chamber 110, and the clips 132 are used to fix the first reflective plate 111a and the second reflective plate 111b. The clip 132 includes a plurality of limiting strips 1321, two adjacent limiting strips 1321 form a clamping groove 1322, the limiting strip 1321 at one end of the clip 132 is disposed on the inner wall 110b, and then the first reflecting plate 111a and the second reflecting plate 111b are disposed in the corresponding clamping groove 1322. In the present embodiment, the first reflecting plate 111a and the second reflecting plate 111b are disposed in the adjacent clamping grooves 1322, and in some embodiments, the first reflecting plate 111a and the second reflecting plate 111b may be disposed in the corresponding clamping grooves 1322 at intervals. The first reflecting plate 111a and the second reflecting plate 111b respectively include a bending portion (not shown) at both ends, and the bending portions at both ends of the first reflecting plate 111a protrude from the clamping grooves 1322, so that the first reflecting plate 111a is circularly disposed on the inner wall 110 b. In this embodiment, six clips 132 are provided on the inner wall 110b, and the clips 132 are uniformly provided on the inner wall 110 b. In some embodiments, eight or ten or more or fewer clips 132 may be provided on the inner wall 110 b. In some embodiments, the first reflective plate 111a and the second reflective plate 111b may be disposed on the inner wall 110b by other methods, such as bonding or nut fixing, for example, the first reflective plate 111a and the second reflective plate 111b may be disposed on the inner wall 110 b. In the present embodiment, through holes 130 of the same size are provided in the same positions of the outer wall 110a, the inner wall 110b, the first reflecting plate 111a and the second reflecting plate 111b, the through holes 130 are positioned higher than the base 111, and a high temperature resistant transparent material is provided in the through holes 130 of the outer wall 110a and the inner wall 110 b. Whereby the worker can understand the growth in the growth chamber 110 from the outside of the growth chamber 110. The inner wall 110b is further provided with a baffle 131, the baffle 131 is disposed at the position of the through hole 130, the baffle 131 can completely cover the through hole 130, the baffle 131 is disposed on the inner wall 110b through the bracket, and the position of the baffle 131 is allowed to be adjusted. After the worker observes the growth condition in the growth chamber 110, the baffle 131 may be disposed in front of the through hole 130, so that the sputtered ions cannot be deposited on the high temperature resistant transparent material disposed on the through holes 130 of the outer wall 110a and the inner wall 110 b. In some embodiments, the through holes 130 on the outer wall 110a may be larger than the through holes 130 on the inner wall 110b to expand the viewing angle to facilitate viewing of growth within the growth chamber 110.

Referring to fig. 12, a cooling device 140 is further disposed on the outer wall 110a of the growth chamber 110, and the cooling device 140 is used for absorbing heat dissipated to the outer wall 110a to prevent the outer wall 110a from being deformed due to high temperature. In this embodiment, the cooling device 140 is, for example, a water pipe surrounding the outer wall 110a, one end of the water pipe is a water inlet, and the other end of the water pipe is a water outlet, and the temperature on the outer wall 110a is effectively absorbed by forming the water pipe into a circulating water path. Meanwhile, the cooling device 140 can also help the growth chamber 110 to accelerate cooling and improve efficiency after the semiconductor apparatus 100 is completed.

Referring to fig. 1 and 13-14, in this embodiment, the growth chamber 110 includes at least one gas inlet, which is connected to an external gas source 124, and the external gas source 124 feeds gas into the growth chamber 110 through the gas inlet. At least one pumping port is included on the growth chamber 110, the pumping port is connected to the vacuum pump 125, and the vacuum pump 125 performs vacuum pumping treatment on the growth chamber 110 through the pumping port. In some embodiments, the growth chamber 110 includes at least two gas inlets, for example, a first gas inlet 119a and a second gas inlet 119b, wherein the first gas inlet 119a and the second gas inlet 119b are respectively disposed on two opposite sides of the growth chamber 110, the first gas inlet 119a and the second gas inlet 119b are symmetrical, and gas can be introduced into the growth chamber 110 through the first gas inlet 119a and the second gas inlet 119 b. In this embodiment, the first air inlet 119a and the second air inlet 119b are respectively connected to an air inlet pipe 200, the air inlet pipe 200 includes an outer casing 210 and an inner casing 220, the inner casing 220 is disposed in the outer casing 210 in parallel, and one end of the inner casing 220 can be connected to one end of the outer casing 210 to form a closed annular cavity. One end of the air inlet pipe 200 is connected to the air inlet, and the other end of the air inlet pipe 200 may contact the inner wall of the growth chamber 110 or the other end of the air inlet pipe 200 may have a certain gap with the inner wall of the growth chamber 110. The outer casing 210 includes a plurality of first exhaust holes 211, the inner casing 210 includes a plurality of second exhaust holes 221, the plurality of first exhaust holes 211 are uniformly disposed on the outer casing 210, and the plurality of second exhaust holes 221 are uniformly disposed on the inner casing 220, respectively, wherein the size of the second exhaust holes 221 is greater than or equal to the size of the first exhaust holes 211, and thus the first exhaust holes 211 and the second exhaust holes 221 may be staggered or partially overlapped or overlapped with each other. In this embodiment, the size of the first exhaust hole 211 is smaller than the size of the second exhaust hole 221, and the first exhaust hole 211 and the second exhaust hole 221 are staggered from each other, and the first exhaust hole 211 and the second exhaust hole 221 are, for example, one of a circle, a rectangle, a triangle, or a combination thereof. The external air flow firstly enters the inner sleeve 220, then enters the annular cavity through the second air exhaust hole 221 on the inner sleeve 220, and then more uniformly enters the growth cavity 110 through the first air exhaust hole 211 on the outer sleeve 210, so that the flow speed of the air flow entering the growth cavity 110 can be greatly slowed down and can not be disturbed, the vibration of equipment and products caused by air flow impact is greatly reduced, the phenomena of equipment hard injury and product damage are avoided, the air flow entering the growth cavity 110 is uniform, and the uniformity of the coating film can be improved.

Referring to fig. 14, in the present embodiment, the air inlet pipe 200 is connected to the air inlet through a branch pipe 230, one end of the branch pipe 230 is fixed to the air inlet, the other end of the branch pipe 230 is connected to the outer casing 210, an air outlet pipe 240 is further disposed on the outer wall of the growth chamber 110, the air outlet pipe 240 and the outer wall of the growth chamber 110 keep a sealed state, the air outlet pipe 240 is disposed on the air inlet, the air outlet pipe 240 is further connected to an external air source 250, the air is delivered to the branch pipe 230 through the air outlet pipe 240 by the external air source 250, after the air enters the inner casing 220, the air enters the outer casing 210 through a plurality of second air outlet holes 221 on the inner casing 220, and then enters the growth chamber 110 through a plurality of first air outlet holes 211 on the outer casing 210, so that the flow rate of the air entering the growth chamber 110 can be greatly slowed down and not disturbed, thereby greatly reducing the vibration of equipment and products caused by the impact of the air flow, avoiding the phenomena of equipment hard injuries and product damages, and improving the uniformity of the air entering the growth chamber 110. In some embodiments, an air flow regulator may also be provided on the manifold 230 or the exhaust pipe 240, which may be used to adjust the flow rate of air within the intake conduit 200.

Referring to fig. 15, in some embodiments, there is a gap, e.g., 2-3mm, between the bottom of the inner sleeve 220 and the bottom of the outer sleeve 210. A plurality of second discharge holes 221 are provided on the bottom of the inner sleeve 220, and a plurality of first discharge holes 211 are provided on the bottom of the outer sleeve 210 while the diameter of the second discharge holes 221 is greater than that of the first discharge holes 211, so that the relative density of the first discharge holes 211 is greater than that of the second discharge holes 221 while the first discharge holes 211 and the second discharge holes 221 are staggered or overlapped or partially overlapped with each other. In this embodiment, a plurality of through holes are formed at one end of the air inlet pipe 200, so that uniformity of air flow entering the growth chamber 110 can be further improved.

Referring to fig. 16, in some embodiments, four air inlets, namely, a first air inlet 119a, a second air inlet 119b, a third air inlet 119c and a fourth air inlet 119d, are provided on the sidewall of the growth chamber 110. The four air inlets are respectively connected with an air inlet pipeline 200, and air is input into the growth cavity 110 through the four air inlets, so that the uniformity of the air in the growth cavity 110 can be improved, and the uniformity of the coating film can be improved.

Referring to fig. 17, in some embodiments, two air inlets, a first air inlet 119a and a second air inlet 119b, are provided on the sidewall of the growth chamber 110. The first air inlet 119a and the second air inlet 119b are offset from each other. An air inlet pipe 200 is connected to the first air inlet 119a and the second air inlet 119b, and the air inlet pipe 200 includes a plurality of air outlet holes 201, so that the air entering the growth chamber 110 becomes more uniform. The diameters of the gas inlet pipes 200 to which the first gas inlet 119a and the second gas inlet 119b are connected may be the same or different in order to adjust the flow rate of the gas.

Referring to fig. 18, in some embodiments, a first air inlet 119a is provided on a sidewall of the growth chamber 110, an air inlet pipe 200 is connected to the first air inlet 119a, and a plurality of air outlet holes 201 are provided on the air inlet pipe 200, and diameters of the plurality of air outlet holes 201 may be the same or different so as to adjust a flow rate of the gas.

Referring to fig. 19, in some embodiments, a plurality of air inlets, namely a first air inlet 119a and a second air inlet 119b, are provided at the top of the growth chamber 110, and an air inlet pipe 200 is connected to the first air inlet 119a and the second air inlet 119b, respectively, and the air inlet pipe 200 is located above the target 123, and the air inlet pipe 200 includes a plurality of air outlet holes 201, so that the air entering the growth chamber 110 becomes more uniform, and the sputtering uniformity of the target 123 and the utilization ratio of the target 123 are improved, so as to improve the uniformity of the coating. The diameters of the gas inlet pipes 200 to which the first gas inlet 119a and the second gas inlet 119b are connected may be the same or different in order to adjust the flow rate of the gas.

Referring to fig. 20, the present embodiment further provides a semiconductor apparatus 300, where the semiconductor apparatus 300 includes a transfer chamber 310, a transition chamber 320, a cleaning chamber 330, a preheating chamber 340, and a plurality of growth chambers 350.

In some embodiments of the invention, proper control of the multi-chamber processing platform may be provided by a controller. The controller may be one of any form of general purpose data processing system, and the controller can be used in an industrial setting to control various sub-processors and sub-controllers. Typically, the controller includes a Central Processing Unit (CPU) that communicates with a memory and input/output (I/O) circuits among other common elements. As an embodiment, a controller may perform or otherwise initialize one or more of the operations of any of the methods/processes described herein. Any computer program code that performs and/or initiates such operations may be embodied as a computer program product. Each of the computer program products described herein may be executed by a computer readable medium (e.g., a floppy disk, an optical disk, a DVD, a hard disk drive, a random access memory, etc.).

Referring to fig. 20, in the present embodiment, the transfer chamber 310 includes a substrate handling robot 311, and the substrate handling robot 311 is operable to transfer substrates between the transition chamber 320 and the growth chamber 350. More specifically, the substrate handling robot 311 may have a dual substrate handling blade adapted to transfer two substrates simultaneously from one chamber to the other. The substrate may be transferred between the transfer chamber 310 and the growth chamber 350 through the slit valve 312. The movement of the substrate handling robot 311 may be controlled by a motor drive system (not shown) which may include a servo motor or a stepper motor.

Referring to fig. 20, in some embodiments, the semiconductor apparatus further includes a manufacturing interface 313, wherein the manufacturing interface 313 includes a cassette containing substrates to be processed and a substrate handling robot (not shown) that may include a substrate planning system to load the substrates in the cassette into the transition chamber 320, and in particular, to place the substrates on a pallet of the carrier.

Referring to fig. 20, in the present embodiment, the transition chamber 320 is connected to the transfer chamber 310, wherein the transition chamber 320 is located between the manufacturing interface 313 and the transfer chamber 310. The transition chamber 320 provides a vacuum interface between the fabrication interface 313 and the transfer chamber 310.

Referring to fig. 21, the transition chamber 320 includes a housing 320a, wherein the housing 320a is a sealed cylinder, and an exhaust port are disposed on a sidewall of the housing 320 a.

Referring to fig. 21, in the present embodiment, a cooling plate 322 is disposed in the transition chamber 320, and the cooling plate 322 is fixed to the bottom of the housing 320a by a plurality of brackets 321. The substrate may be subjected to a cooling process by the cooling plate 322. In the present embodiment, the cooling plate 322 may be, for example, cylindrical or rectangular or other shape, and the cooling plate 322 may be fixed in the housing 320a by, for example, four brackets 321.

Referring to fig. 22, in the present embodiment, the cooling plate 322 has a cylindrical shape, and the cooling plate 322 includes a plurality of internal threaded holes 322a, for example, four internal threaded holes 322a. Corresponding external threads are provided at both ends of the bracket 321, whereby one end of the bracket 321 can be disposed in the internal threaded hole 322a.

Referring to fig. 23, in the present embodiment, the other end of the bracket 321 is fixed in the housing 320a by a base 3211, the base 3211 includes a plurality of first threaded holes 3211a and a second threaded hole 3211b, wherein the second threaded hole 3211b is located at a center position of the base 3211, and the plurality of first threaded holes 3211a are uniformly arranged around the second threaded hole 3211 b. The other end of the bracket 321 is disposed in a second screw hole 3211b, and a plurality of first screw holes 3211a are used for placing a plurality of nuts, thereby fixing the base 3211 in the housing 320 a. In this embodiment, six first threaded holes 3211a are included on the base 3211, and in some embodiments, four or more first threaded holes 3211a may be provided on the base 3211.

Referring to fig. 21, in the present embodiment, at least one stage, for example, two stages, for example, a first stage 325 and a second stage 328 are disposed in the housing 320a, the first stage 325 and the second stage 328 are fixed on a supporting plate 323, the supporting plate 323 includes a main rod and two side plates, the two side plates are disposed at two ends of the main rod, respectively, and the first stage 325 and the second stage 328 are disposed between the two side plates. In this embodiment, the supporting plate 323 is further connected to a control rod 324, specifically, the control rod 324 is connected to the main rod of the supporting plate 323, and one end of the control rod 324 is further located outside the housing 320a, and the control rod 324 can drive the supporting plate 323 to rise and/or fall. In this embodiment, the control rod 324 is connected to a driving unit (not shown) for controlling the control rod 324 to ascend and/or descend. The second stage 328 may contact the cooling plate 322 when the driving unit controls the lowering of the control rod 324.

Referring to fig. 24, in the present embodiment, at least one tray may be placed on the first stage 325 and the second stage 328, where the tray is used for placing a substrate, for example, one tray 3251 may be placed on the first stage 325, and two or three or more trays 3251 may be placed on the first stage 325. The tray 3251 can be formed from a variety of materials including silicon carbide or graphite coated with silicon carbide. At least one substrate, which may include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper, and/or aluminum gallium nitride, may be provided on the tray 3251, and may also be, for example, soda lime glass and/or high silicon glass. In general, the substrate may be composed of the following: materials having compatible lattice constants and coefficients of thermal expansion, substrates compatible with III-V materials grown thereon, or substrates thermally stable and chemically stable at III-V growth temperatures. In this embodiment, the substrate is, for example, a silicon substrate or a silicon carbide substrate, and a metal compound film, for example, an aluminum nitride film or a gallium nitride film, for example, a (002) -oriented aluminum nitride film may be formed on the silicon substrate or the silicon carbide substrate, for example. When a substrate is placed in the transition chamber 320, the substrate is placed on the first stage 325 and after the substrate has completed the corresponding overall process, the substrate is placed on the second stage 328.

In some embodiments, a stage may be disposed in the transition chamber 320, at least one substrate may be disposed on the stage, the substrate may be placed in the growth chamber by lifting the stage, and after the substrate has completed the corresponding entire process, the substrate may be placed on the stage and lowered onto the cooling plate 322 by the stage to cool the substrate.

Referring to fig. 21, in the present embodiment, the transition chamber 320 further comprisesIncludes an air extraction opening, the air extraction opening is connected with a vacuum pump 327, and the vacuum pump 327 is used for vacuumizing the transition cavity 320. In this embodiment, the evacuation process is performed in multiple steps, for example, the transition chamber 320 is first evacuated to 1×10 using a Dry Pump (Dry Pump) ^-2 Pa, then pumping the transition chamber 320 to 1 x 10 using a turbo high vacuum pump (Turbo Molecular Pump) ^-4 Pa or less than 1X 10 ^-4 Pa, after the transition chamber 320 enters a vacuum state, the control rod 324 drives the first stage 325 and the second stage 328 to move along a predetermined path, for example, the control rod 324 drives the first stage to move upwards. In this embodiment, the transition chamber 320 is connected to a transfer chamber, a substrate handling robot in the transfer chamber transfers the substrate from within the transition chamber 320 to the transfer chamber, and then the substrate is transferred by the substrate handling robot to other chambers, such as a preheating chamber, a cleaning chamber, or a growth chamber, in which a thin film may be formed on the surface of the substrate, the material of the thin film may include one or more of aluminum oxide, hafnium oxide, titanium nitride, aluminum gallium nitride, or gallium nitride. After the substrate finishes the film plating operation, the substrate loading and unloading mechanical arm in the transfer cavity transfers the substrate to the second stage 328 in the transition cavity 320, and then the control rod 324 drives the first stage 325 and the second stage 328 to move along a direction opposite to the preset path, for example, move downwards, so that the second stage 328 contacts the cooling plate 322, and the second stage 328 and the substrate on the second stage 328 are cooled by the cooling plate 322. Meanwhile, an exhaust port is further included on one side of the housing 320a, the exhaust port is connected to an air source 326, when the transition cavity 320 is subjected to vacuum breaking treatment, the control rod 324 drives the second carrying platform 328 to be far away from the cooling plate 322, so that a preset distance, for example, 5-10mm, is provided between the second carrying platform 328 and the cooling plate 322, and then nitrogen or argon is introduced into the transition cavity 320 through the exhaust port by the air source 326, so as to perform vacuum breaking treatment on the transition cavity 320, thereby avoiding that the substrate is cooled and cracks are generated on the substrate due to the introduction of the nitrogen. When the transition chamber 320 is completely evacuated, the substrate can be removed for storage analysis.

It should be noted that when the substrate is placed in the transition cavity 320, nitrogen or argon is first introduced into the transition cavity 320 through the exhaust port, so that the transition cavity 320 reaches the atmospheric pressure balance, or the pressure in the transition cavity 320 is greater than the atmospheric pressure, so as to avoid the entry of the contaminant into the transition cavity 320 due to the negative pressure difference.

It should be noted that the substrate may be 2 inches, 4 inches, 6 inches, 8 inches, or 12 inches in size, requiring adequate cleaning of the surface of the substrate prior to placement within the transition chamber 320.

Referring to fig. 20, in the present embodiment, the cleaning chamber 330 is connected to the transfer chamber 310, the cleaning chamber 330 is located on a sidewall of the transfer chamber 310, and when a substrate enters the transition chamber 320, the substrate handling robot 311 in the transfer chamber 310 then transfers the substrate from the transition chamber 320 into the cleaning chamber 330 for cleaning.

Referring to fig. 25, a substrate support member 331 is disposed in the cleaning chamber 330, the substrate support member 331 is disposed at the bottom of the cleaning chamber 330, and the substrate support member 331 does not contact the cleaning chamber 330. The substrate support assembly 331 includes a pedestal electrode 3311 and an electrostatic chuck 3312, the electrostatic chuck 3312 being disposed on the pedestal electrode 3311, the electrostatic chuck 3312 being adapted to hold a substrate thereon, at least one substrate being held on the electrostatic chuck 3312, and in some embodiments, a plurality of substrates being disposed on the electrostatic chuck 3312 while performing a cleaning operation on the plurality of substrates, thereby improving a working efficiency.

Referring to fig. 25, in the present embodiment, the substrate supporting assembly 331 is further connected to a lifting and rotating mechanism 334, specifically, the lifting and rotating mechanism 334 is connected to the pedestal electrode 3311, and lifting or rotating of the substrate supporting assembly 331 can be achieved by the lifting and rotating mechanism 334, so as to indirectly achieve lifting or rotating of the substrate. When the substrate support assembly 331 is rotated up or down, the distance between the substrate and the electrode 332 is changed to adjust the electric field strength between the pedestal electrode 3311 and the electrode 332 so that the plasma may better clean the substrate.

Referring to fig. 26, the lifting and rotating mechanism 334 includes a lifting mechanism for lifting or lowering the pedestal electrode 3311 and a rotating mechanism for rotating the pedestal electrode 3311. The lifting mechanism includes a lifting motor 3341 and a guide bar 3342. One end of the guide rod 3342 is disposed in the cleaning chamber 330 and connected to the pedestal electrode 3311, and the guide rod 3342 and the pedestal electrode 3311 are sealed by a seal ring 3343. In the present embodiment, the output shaft of the lift motor 3341 is connected to the guide bar 3342, so that the pedestal electrode 3311 can be lifted or lowered by the lift motor 3341. In the present embodiment, the rotation mechanism includes a rotation motor 3344, a worm 3345, and a worm wheel 3346. The output shaft of the rotating motor 3344 is connected to a worm 3345, the worm 3345 is connected to a worm wheel 3346, the worm wheel 3346 is fixed to a guide rod 3342, the worm wheel 3346 and the worm 3345 are engaged and driven, the rotating motor 3344 is a stepping motor, for example, the rotating motor 3344 steps once, the pedestal electrode 3311 rotates one holding position, and a bracket for holding the rotating mechanism is fixed to the guide rod 3342.

Referring to fig. 25, in the present embodiment, the cleaning chamber 330 further includes an electrode 332, the electrode 332 is disposed above the substrate support assembly 331, the electrode 332 does not contact the top of the cleaning chamber 330, and in some embodiments, the distance between the electrode 332 and the substrate support assembly 331 is 2-25cm, for example, 10-20cm, and for example, 16-18cm. The electrode 332 is also connected to a lifting and rotating mechanism 333, and the lifting and rotating mechanism 333 is identical to the lifting and rotating mechanism 334 in structure, and the lifting and rotating mechanism 333 is not described in this embodiment. When the electrode 332 is rotated up or down, the distance between the electrode 332 and the substrate is changed to adjust the electric field intensity between the electrode 332 and the substrate, so that the plasma can uniformly clean the substrate. When the electrode 332 rotates simultaneously with the substrate support assembly 331, the rotational speed of the electrode 332 and the rotational speed of the substrate support assembly 331 may be the same or have a certain speed difference so that the plasma uniformly cleans the substrate.

Referring to fig. 25, in this embodiment, the substrate support assembly 331 is further coupled to at least one rf bias power source 338, and in particular, the rf bias power source 338 is coupled to the pedestal electrode 3311. The rf frequency of the rf bias power supply 338 may be high frequency, intermediate frequency, or low frequency. For example, the high frequency may be a 13.56MHz RF bias source; the intermediate frequency may be a 2MHZ rf bias source and the low frequency may be a few 300-500KHZ rf bias source. Wherein, the silicon etching can be performed by using high-frequency radio frequency; the etching of the dielectric may be performed using medium frequency or low frequency rf, and thus, the rf bias power supply 338 of different frequencies may be simultaneously connected to the pedestal electrode 3311 to achieve the simultaneous etching of silicon and dielectric. In this embodiment, the electrode 332 is further connected to at least one rf power source 337, and the rf frequency of the rf power source 337 is, for example, 13.56MHZ. The rf power source 337 and the rf bias power source 338 are both driven by a synchronization pulse that can be simultaneously turned on and off to reduce the electron temperature within the cleaning chamber 330 and provide good control of the cleaning (etch depth) of the dense area of the substrate.

Referring to fig. 25, in this embodiment, the cleaning chamber 330 further includes a gas inlet proximate to the electrode 332, which is coupled to a gas source 335, and which delivers a gas, such as a precursor gas including chlorine-containing gas, fluorine-containing gas, iodine-containing gas, bromine-containing gas, nitrogen-containing gas, and/or other suitable reactive elements, through the gas source 335 into the cleaning chamber 330. When the rf power source 337 and/or the rf bias power source 338 are activated, a plasma is generated near the substrate surface. The generated plasma typically contains radicals and ions formed from a gas mixture including argon, nitrogen, hydrogen, and/or other gases. The generated gas ions and radicals interact with and/or bombard the substrate surface to remove any substrate surface contamination and particles. In some cases, the plasma is used to modify the surface structure of the substrate to ensure better crystal alignment between the substrate and the deposited epitaxial thin film layer (e.g., an AlN-containing buffer layer). The plasma density, bias voltage, and processing time can be adjusted to efficiently process the substrate surface without damaging the substrate surface. In one embodiment, a bias of about-5 volts to-1000 volts is applied to a pedestal electrode 3311 disposed within a substrate support assembly 331 for a period of about 1 second to 15 minutes, a substrate is disposed on a substrate support On the assembly 331. The frequency of the power delivered to the processing region of the cleaning chamber 330 may vary from about 10 kilohertz to 100 megahertz and the power level may be between about 1 kilowatt and 10 kilowatts. In this embodiment, the cleaning chamber 330 further includes an exhaust port near the substrate support assembly 331, the exhaust port is connected to a vacuum pump 336, the vacuum pump 336 is configured to pump the gas in the cleaning chamber 330 such that the pressure in the cleaning chamber 330 is within a predetermined background vacuum range, for example, 10 ^-5 -10 ^-3 Pa, mixing the precursor gas for the cleaning application into the cleaning chamber 330, and adjusting the pumping speed of the cleaning chamber 330 so that the pressure of the cleaning chamber 330 enters a predetermined working pressure range, for example, 1Pa-20Pa.

In some embodiments, the electrostatic chuck 3312 is provided with a plurality of independent temperature control regions, and the temperature of each independent temperature control region ranges from 30 ℃ to 150 ℃, and the temperature also has an effect on the cleaning efficiency, so that the cleaning efficiency of the substrate can be further improved and the product quality can be improved by controlling and adjusting the temperature on the electrostatic chuck 3312.

In this embodiment, by cleaning the substrate, surface contamination (e.g., oxides, organic materials, other contaminants) and particles can be removed from the substrate while also preparing the substrate surface to receive high quality buffer layers and III-V layers that have a higher crystallographic orientation in the highly crystalline structure. In one embodiment, cleaning the substrate enables deposition of high quality buffer layers and III-V layers having a surface roughness of less than about 1 nanometer. In addition, the film can be formed on the substrate with high uniformity.

Referring to fig. 27, another cleaning chamber is provided in this embodiment, which includes a reaction chamber 2000, a bottom electrode 2001, a liner (cleaning) 203, a coil assembly 204, and a rf bias source 206.

Referring to fig. 27, the reaction chamber 2000 has a reaction space in which generated plasma and other components can be accommodated. The chamber wall of the reaction chamber 2000 may be a quartz window 205.

Referring to FIG. 27, the lower electrode 2001 is disposed at the bottom of the reaction chamber 2000 but not in contact with the bottom of the reaction chamber 2000. The lower electrode 2001 is for supporting the substrate 202 to be etched, and the lower electrode 2001 is a conductive plate, for example, an iron plate or the like, but is not limited thereto. Further, the lower electrode 2001 may be connected to a temperature controller (not shown) that controls the temperature of the lower electrode 2001 to be in the range of 0-100 ℃, and the substrate 202 may be indirectly controlled to a temperature required for the process by the lower electrode 2001.

Referring to FIGS. 27-28, liner 203 is disposed in the top center region of reaction chamber 2000, i.e., liner 203 is disposed above the upper chamber wall of reaction chamber 2000 and does not contact the upper chamber wall. The bushing 203 may be cylindrical, although other shapes are possible as desired. The bushing 203 is a conductive plate, for example, an iron plate, but is not limited thereto. Further, the liner 203 is a rotatable liner, the rotation axis of which is perpendicular to the upper wall of the reaction chamber 2000, but may be deflected at a certain angle. In this embodiment, the position between the liner 203 and the coil assembly 204 is not a fixed connection, and the relative position is changed by the rotation of the liner 203 during etching, so that the etching rate (cleaning rate) at each position on the substrate 202 is more uniform. Further, the distance between the bushing 203 and the lower electrode 2001 is adjustable, and the distance may be selected in the range of 5 to 25cm, for example, 5cm, 10cm, 15cm, 20cm, or 25cm. In this embodiment, the distance between the bushing 203 and the lower electrode 2001 is 20cm. The bushing 203 is a conductive plate, for example, an iron plate, etc., but is not limited thereto.

Referring to fig. 27-28, the cleaning chamber further includes a coil assembly 204, wherein a surface of the coil assembly 204 is convex, the convex coil assembly 204 extends helically from the liner, and the curvature of the convex surface is adjustable. The middle coil is far away from the reaction cavity by the convex coil assembly, so that the electron temperature in the middle of the reaction cavity can be ensured to be lower, and the electron temperature in the middle and at the two sides of the reaction cavity can be distributed more uniformly. The material of the coil assembly 204 is one of silver, copper, aluminum, gold, or platinum. In this embodiment, the coil assembly 204 may be a copper coil.

Referring to fig. 27, the bushing 203 is also connected to an rf power source (not shown), for example, at 13.56MHZ. The lower electrode 2001 is connected to at least one RF bias source 206, only one RF bias source 206 being illustrated in FIG. 27. The RF frequency of the RF bias source 206 may be high frequency, medium frequency, or low frequency. For example, the high frequency may be a 13.56MHz RF bias source; the intermediate frequency may be a 2MHz RF bias source and the low frequency may be a 400-600KHZ RF bias source. Wherein, the silicon etching can be performed by using high-frequency radio frequency; the etching of the dielectric may be performed using medium frequency or low frequency rf, and thus, rf bias sources 206 of different frequencies may be simultaneously connected to the lower electrode 2001 to achieve simultaneous etching of silicon and dielectric. Both the rf power source and the rf bias source 206 are driven by a synchronization pulse that can be simultaneously turned on and off to reduce the electron temperature within the chamber 2000, and the synchronization pulse has good control over the etch depth (cleaning depth) in dense areas of the substrate 202.

Referring to fig. 20, in the present embodiment, the preheating chamber 340 is connected to the transferring chamber 310, the preheating chamber 340 is located on a sidewall of the transferring chamber 310, and after the substrate completes the necessary semiconductor process in the preheating chamber 340, the substrate loading/unloading robot 311 in the transferring chamber 310 transfers the substrate into the preheating chamber 340 to preheat the substrate.

Referring to fig. 29, the preheating chamber 340 includes a housing 340a, a support 341 is disposed at the bottom of the housing 340a, the support 341 may be, for example, a hollow structure, and then a wire is placed in the inner structure of the support 341 and connected to a heater 342. In this embodiment, the support 341 may be, for example, a high temperature resistant material.

Referring to fig. 29-30, in the present embodiment, a heater 342 is disposed in a preheating chamber 340, the heater 342 is fixed on a bracket 341, the heater 342 includes a chassis 3421 and a heating coil 3424, the chassis 3421 includes a plurality of spacing strips 3422, the plurality of spacing strips 3422 are divided into a fan shape on the chassis 3421, and a spacing chamber is disposed between two adjacent spacing strips 3422, which is beneficial to heat dissipation of the enamel wire. The plurality of stop bars 3422 and the chassis 3421 may be integrally formed. A plurality of baffles 3423 are further disposed on the plurality of limiting strips 3422, and the plurality of baffles 3423 are distributed on the plurality of limiting strips in a fan shape to form a concentric circle structure. In this embodiment, a wire slot is formed between two adjacent baffles 3423, a heating coil 3424 is disposed in the wire slot, and an enamel wire is placed in the wire slot to form the heating coil 3424. In this embodiment, the enameled wire is of a single-layer structure, and the winding position of the enameled wire in this embodiment is not concentrated on the same compartment, but the winding between adjacent wire grooves is optionally performed on any compartment, and the winding method of the enameled wire is as follows: the heater described in this example is wound in this manner by a first turn, then a second turn through one of the compartments, then a third turn through the other compartment, and then a fourth and fifth turn … … in sequence. In some embodiments, the enamel wire may also have a multi-layered structure. In some embodiments, a layer of insulating film can be wrapped outside the enamelled wire to prevent short circuit and electric leakage of the enamelled wire due to non-uniform paint dropping or baking finish, and the circuit board is broken down to improve the safety performance of the wire coil and ensure more uniform distribution of magnetic induction lines.

Referring to fig. 31, in the present embodiment, the cross section of the heating coil 3424 is circular, and the height of the baffle 3423 is greater than the height of the heating coil 3424, in some embodiments, the heating coil 3424 may also be an enameled wire with a flat cross section, the flat enameled wire may be vertically disposed in the wire slot, and under the condition that the number and diameter of the enameled wires are fixed, the transverse width of the enameled wire harness with a flat cross section is smaller than that of the enameled wire with a circular cross section. Therefore, the winding density between the coils is more dense, the magnetic induction intensity of the wire coil is greatly enhanced, and the heating is more uniform. If the transverse width of the enamelled wire is reduced under the condition that the diameter of the chassis 3421 is fixed, the number of turns of the enamelled wire can be increased, and the winding mode of the heating coil 3424 can be conveniently adjusted.

Referring to fig. 32, in the present embodiment, a plurality of measurement points are further disposed on a surface of the tray 343 near the substrate 344, and then the plurality of measurement points are connected to a temperature measuring device, wherein the temperature measuring device can be disposed in the preheating chamber 340 or disposed outside the preheating chamber 340, and the temperature on the substrate 344 can be measured in real time by the temperature measuring device, so that the surface temperature and the thermal uniformity of the substrate 344 can be controlled. The temperature measuring device can be, for example, a thermocouple. In other embodiments, the temperature of substrate 344 may be measured by infrared temperature sensing devices shining onto the surface of substrate 344.

Referring to FIG. 32, in this embodiment, the heating rate of the heater 342 may be 3-7deg.C/s and the heater 342 may be heated to 650-1500deg.C. In this embodiment, temperature measurement experiments were performed at 9 positions on the substrate 344, and the data are shown in the following table:

in Table 1, this example was subjected to three temperature tests, the temperatures set for the three times being 500 ℃,700 ℃ and 760 ℃, respectively. Wherein during the first temperature test, the position with the lowest temperature is at the point A, the temperature is 482.2 ℃, the position with the highest temperature is at the point B, the temperature is 511.8 ℃, the range is 29.6 ℃, the average temperature of the points A-I is 499.4 ℃, and the temperature deviation is 5.9%. In the second temperature test, the position with the lowest temperature is at the point A, the temperature is 663.3 ℃, the position with the highest temperature is at the point E, the temperature is 698 ℃, the range is 34.7 ℃, the average temperature of the points A-I is 682.8 ℃, and the temperature deviation is 5.1%. In the third temperature test process, the position with the lowest temperature is at the point A, the temperature is 734.3 ℃, the position with the highest temperature is at the point C, the temperature is 751 ℃, the range is 16.7 ℃, the average temperature of the points A-I is 745.0 ℃, and the temperature deviation is 2.2%. In summary, by analyzing the three temperature tests, it is known that the temperature of the center of the substrate is low, the temperature of the edge of the substrate is high, and the temperature deviation of the three tests is less than 6%, so that the heater heats the substrate uniformly.

Referring to fig. 29, an air suction opening is further disposed at the bottom of the preheating cavity 340, and the air suction opening is connected to a vacuum pump 345, and the vacuum pump 345 is used to perform vacuum pumping treatment on the preheating cavity 340 to obtain the preheating cavity 340 in a vacuum state. It should be noted that, in the preheating process of the substrate 344, the vacuum pumping process is performed first, and then the heating process is performed to prevent the oxidation of the substrate. In some embodiments, a shielding gas, such as nitrogen or helium, may also be introduced into the preheating chamber 340 to further prevent oxidation of the substrate 344.

Referring to fig. 29, in the present embodiment, a heater 342 is disposed in the preheating chamber 340, and it should be noted that a plurality of heaters 342 may be disposed on the side wall of the preheating chamber 340, and a plurality of heaters may be disposed on the top of the preheating chamber 340 to ensure the uniformity of the overall temperature of the preheating chamber 340.

Referring to fig. 20, in the present embodiment, a plurality of growth chambers 350 are disposed on the side walls of the transfer chamber 310, and after the substrate completes the corresponding process in the preheating chamber 340, the substrate handling robot 311 in the transfer chamber 310 transfers the substrate into the growth chamber 350 for operation, and as a result, uniform sputtering ions can be formed on the surface of the substrate due to the uniform magnetic field formed in the growth chamber 350, thereby forming a uniform film on the substrate.

Referring to fig. 33, the present embodiment further provides a method for using a semiconductor device, including:

s1: placing the substrate on the tray;

s2: carrying out vacuumizing treatment, and carrying out ascending movement on the carrier to convey the substrate into the growth cavity so as to form a film on the substrate;

s3: and carrying out vacuum breaking treatment, wherein a preset interval is reserved between the carrying platform and the cooling plate.

Referring to fig. 20, in step S1, a manufacturing interface 313 includes a cassette containing substrates to be processed and a substrate handling robot (not shown) that may include a substrate planning system to load the substrates in the cassette into the transition chamber 320, specifically, to place the substrates on a tray of a first stage.

Referring to fig. 20, in step S2, after the substrate is placed on the tray of the first stage, the transition chamber 320 is subjected toVacuum-pumping, e.g. by pumping the transition chamber 320 to 1X 10 by a dry pump ^-2 Pa, then pumping the transition chamber 320 to 1 x 10 using a turbo high vacuum pump (Turbo Molecular Pump) ^-4 Pa or less than 1X 10 ^-4 Pa, after the transition chamber 320 enters the vacuum state, the control rod 324 drives the first stage and the second stage to move along a predetermined path, for example, the control rod 324 drives the first stage to move upwards. Then, the substrate loading/unloading robot 311 in the transfer chamber 310 transfers the substrate from the transition chamber 320 to the transfer chamber 310, and then the transfer chamber 310 sequentially transfers the substrate to the cleaning chamber 330, the preheating chamber 340 and the growth chamber 350, and one or more of aluminum oxide, hafnium oxide, titanium nitride, aluminum gallium nitride or gallium nitride may be formed on the surface of the substrate in the growth chamber 350. In this embodiment, the substrate may be transferred between the manufacturing interface 313 and the transition chamber 320 via the slit valve and between the transition chamber 320 and the transfer chamber 310 via the slit valve 312. The movement of the substrate handling robot 311 may be controlled by a motor drive system (not shown), which may include a servo motor or a stepper motor.

Referring to fig. 20, in step S3, after the substrate is coated, the substrate loading/unloading robot 311 in the transfer chamber 310 transfers the substrate into the transition chamber 320, specifically, places the substrate on the second stage, then controls the second stage to move along a direction opposite to the preset path through the control rod, for example, controls the stage to move downward through the control rod, so that the second stage contacts the cooling plate, cools the second stage and the substrate through the cooling plate, and before the air intake vacuum breaking process, firstly controls the second stage to leave the cooling plate to a preset distance, for example, 5-10mm, and then introduces nitrogen or argon into the transition chamber 320 for vacuum breaking process, so as to prevent the substrate from cracking due to a large amount of introduced nitrogen or argon while cooling, and then takes out the substrate through the substrate loading/unloading robot in the manufacturing interface.

Referring to fig. 34, the analysis of the aluminum nitride film on the substrate in this example shows that when the relative temperature is less than 0.1, the A1 region appears as loose fibrous crystallites, the structure is an inverted cone fiber, and a large amount of gaps exist at the grain boundary, and the film strength is poor. When the relative temperature is 0.1-0.3, the A2 area shows compact fibrous microcrystals, the microcrystals in the area still have a fine fibrous structure with the diameter of tens of nanometers, the defect density in the fiber is still high, the fiber boundaries are densified, holes among the fibers are basically disappeared, the film strength is obviously improved compared with the A1 area, the film surface is basically flat, and the fluctuation is smaller. When the relative temperature is between 0.3 and 0.5, the A3 region shows columnar crystal characteristics, each crystal grain in the region grows to obtain uniform columnar crystals, the defect density in the columnar crystal is low, the crystal boundary density is high, and the crystallographic plane characteristics are shown. When the relative temperature is greater than 0.5, the A4 region shows coarse equiaxed crystals, the density of defects in the equiaxed crystals is low, the film crystallization is complete, and the strength is high. Therefore, when the relative temperature is low, namely 0-0.3, the sputtered ions cannot be fully surface-diffused after entering the surface of the substrate, and are continuously covered by the subsequent sputtered ions, so that relatively dense fiber tissues growing in parallel are formed, the fibers are surrounded by relatively loose boundaries, the fiber tissue boundaries are low in density, low in bonding strength and weak and easy to crack, and obvious beam-shaped fiber characteristics are shown on the section morphology. When the stability is relatively high, that is, 0.3 to 0.7, the sputtered ions can be sufficiently surface-diffused after entering the substrate surface, the migration distance of the sputtered ions is increased, the micro-fiber structure forms columnar crystals due to the surface diffusion, the columnar crystals form coarse equiaxed crystals after body diffusion and grain boundary movement, and defects among grain boundaries are reduced. The embodiment deposits the coating film at uniform high temperature, the film forming speed is high, the crystal lattice arrangement of the aluminum nitride shows the growth in the columnar crystal direction, the film forming crystallinity is good, and the film forming uniformity is improved. Wherein, the relative temperature is the ratio of the substrate temperature to the film melting temperature, if the substrate temperature is lower, the relative temperature is lower, and if the substrate temperature is higher, the relative temperature is higher.

Referring to fig. 35, the present embodiment analyzes an aluminum nitride film 401 formed on a substrate 400, and it can be seen from the figure that the aluminum nitride film 401 has a columnar crystal structure, and the aluminum nitride film 401 has high internal density and low defect density, so that the quality of the aluminum nitride film formed by the semiconductor device is high.

Referring to fig. 36, a rocking curve of an aluminum nitride film formed under two different film forming conditions is shown, and then dislocation density of the (002) crystal face of the aluminum nitride film is studied by the rocking curve. The difference in the two film formation conditions was only due to the pretreatment of the substrate. As can be seen from fig. 36, the half-width of the C1 curve is 227 arc angles and the half-width of the C2 curve is 259 arc angles, so that the growth rate of the aluminum nitride film obtained without pretreatment of the substrate is high, the dislocation density is high, the growth rate of the aluminum nitride film obtained by pretreatment of the substrate is low, and the dislocation density is low. Therefore, after the substrate is subjected to the pretreatment, the quality of the aluminum nitride film formed under the same conditions is improved.

In summary, the present invention provides a semiconductor device with a simple structure and high uniformity of a thin film obtained by the semiconductor device, and a method for using the semiconductor device.

The foregoing description is only illustrative of the preferred embodiments of the present application and the technical principles employed, and it should be understood by those skilled in the art that the scope of the invention in question is not limited to the specific combination of features described above, but encompasses other technical solutions which may be formed by any combination of features described above or their equivalents without departing from the inventive concept, such as the features described above and the features disclosed in the present application (but not limited to) having similar functions being interchanged.

Other technical features besides those described in the specification are known to those skilled in the art, and are not described herein in detail to highlight the innovative features of the present invention.

Claims

1. A method of using a semiconductor device, characterized by:

the carrier is arranged in a transition cavity, the transition cavity is arranged in front of the growth cavity, the carrier is divided into a first carrier and a second carrier, and a substrate is placed on a tray of the first carrier before vacuumizing treatment;

after coating, moving the substrate to a tray of the second carrier of the transition cavity;

the control rod drives the second carrying platform to move along the opposite direction of the preset path until the control rod drives the second carrying platform to contact with the cooling plate so as to cool the second carrying platform and the substrate;

before the vacuum breaking treatment, the control rod drives the second carrying platform to move until the distance between the second carrying platform and the cooling plate reaches a preset distance, and the vacuum breaking treatment is carried out on the transition cavity.

2. A method of using a semiconductor device according to claim 1, wherein: the top of the growth cavity is rotationally provided with a target, a magnet is arranged above the target, the magnet is of an arc-shaped structure or a rectangular structure, the magnet is connected with a driving mechanism, the driving mechanism drives the magnet to rotate and reciprocate up and down, the magnet rotates around a central shaft of the target, and the rotating speed of the magnet is different from that of the target.

3. A method of using a semiconductor device according to claim 1, wherein: the magnetron sputtering device also comprises a control unit, wherein the control unit is used for driving the pedestal to ascend in the magnetron sputtering process so as to keep the distance between the target and the pedestal unchanged.

4. A method of using a semiconductor device according to claim 1, wherein: the first carrying platform and the second carrying platform are connected to a supporting plate, the supporting plate is connected with a control rod, one end of the control rod is located outside the transition cavity, and the control rod drives the supporting plate to ascend and/or descend.

5. A method of using a semiconductor device according to claim 3, wherein: the central portion of the base is raised relative to the edge, the substrate is disposed on the central portion of the base, a portion of the substrate covers and is spaced apart from the edge region, and there is no direct contact between the base and the substrate at the edge of the substrate.

6. A method of using a semiconductor device according to claim 1, wherein: two air inlets are arranged on the side wall of the growth cavity, the two air inlets are staggered, and the two air inlets are respectively connected with an air inlet pipeline.

7. A method of using a semiconductor device according to claim 1, wherein: the cooling plate is fixed on the transition cavity through a plurality of brackets.