CN104746031A - A sputtering system - Google Patents
A sputtering system Download PDFInfo
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- CN104746031A CN104746031A CN201310737548.XA CN201310737548A CN104746031A CN 104746031 A CN104746031 A CN 104746031A CN 201310737548 A CN201310737548 A CN 201310737548A CN 104746031 A CN104746031 A CN 104746031A
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- sputtering
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Abstract
A sputtering system is provided. The sputtering system comprises a cavity, sputtering sources and a base. Plasma is produced in the cavity. The base is used for bearing a substrate. The sputtering system comprises at least one pair of the sputtering sources, and the sputtering sources in each pair are oppositely disposed. The base is disposed in the cavity and outside a plasma zone. The sputtering system is high in sputtering speed, low in damage to film and capable of achieving low-temperature sputtering.
Description
Technical field
The invention belongs to field of semiconductor processing, relate to a kind of sputtering system.
Background technology
Film deposition techniques is the technology that general technical field of semiconductors extensively adopts, if namely insulation layer and metallized conductive layer are obtained by film deposition techniques.Physical vapor deposition device is the common equipment realizing film deposition techniques, and it obtains film by means such as evaporation, ionic fluid, sputterings.Wherein, sputtering method sedimentation rate is fast, and the film compactness obtained is good, purity high, is generally adopted in the industry.
Fig. 1 is a kind of structural scheme of mechanism implemented sputtering method and prepare the secondary sputtering equipment of film.As shown in Figure 1, secondary sputtering equipment comprises chamber 3, target 2 and the pedestal 4 for carrying substrates 7, and target 2 and pedestal 4 are relatively located at top in chamber 3 and bottom respectively.Chamber 3 ground connection.The refrigerating unit 1 for cooling target 2 is provided with above target 2.Vacuum system 6 is for regulating the pressure in chamber 3, and air-path control system 5 for providing process gas in chamber 3.Target 2 is connected with the negative potential of direct supply (not shown).When process gas is ionized generation plasma body, the surface of bombardment target 2, the surface being deposited on substrate 7 by the target 2 bombarded forms film.
Although this secondary sputtering equipment has the advantage that sedimentation rate is fast, film is fine and close and film purity is higher.But, in technological process, negative film between plasma body and substrate 7 pressure can photoinduced electron bombardment substrate 7, not only can damaging substrate 7, and the temperature of substrate 7 can be caused to raise, the high deposition rate required by general semiconductor applications, low temperature and undamaged requirement cannot be met.
Although person skilled is improved above-mentioned secondary sputtering equipment, that is, target 2 is made to connect radio-frequency power supply, to reducing temperature and the damage of substrate 7.But target 2 connects radio-frequency power supply can reduce sedimentation rate again, affects production efficiency.
Summary of the invention
For solving the problem, the invention provides a kind of sputtering system, not only sedimentation rate is very fast for it, and effectively can reduce damage and the temperature of substrate.
The technical scheme adopted solved the problems of the technologies described above is to provide a kind of sputtering system, comprise chamber, sputtering source and pedestal, plasma generation is in described chamber, described pedestal is used for carrying substrates, it comprises sputtering source described at least one pair of, often pair of described sputtering source is oppositely arranged, and described pedestal to be located in described chamber and to be positioned at outside heating region.
Wherein, described pedestal to be located in described chamber and to be positioned at the edge of heating region.
Wherein, described sputtering source comprises target, magnet assemblies and refrigerating unit, the sputter face of described target is towards described chamber, and the sputter face of described target in often pair of described sputtering source is relative, described magnet assembly and described refrigerating unit are located at the non-sputtered face of described target, and the polarity of described magnet assemblies in often pair of described sputtering source is contrary.
Wherein, described sputtering source also comprises direct supply, and the negative pole of described direct supply is electrically connected with described target.
Wherein, comprise a pair sputtering source, described sputtering source is located at the sidewall of described chamber.
Wherein, also comprise headstock gear, be separated for making described sputtering source with described chamber and close.
Wherein, also comprise vacuum system, for regulating the vacuum tightness in described chamber.
Wherein, also comprise process gas supply system, for providing required process gas in described chamber.
Wherein, described pedestal comprises chip bench, transmission rig and driving mechanism, described chip bench is used for carrying substrates, and the two ends of described transmission rig connect the output terminal of described driving mechanism and described chip bench respectively, and the described chip bench of driving of described driving mechanism moves up and down.
Wherein, also comprise and support pin and support pin drive element, described support pin drive element drives described support pin to move up and down, described substrate to be positioned over the loading end of described pedestal or the loading end jack-up from described pedestal.
Wherein, also comprise shield ring, described shield ring is located at the edge of described substrate.
Preferably, for the preparation of the metal gate film in IC field or the ito thin film of LED field.
The present invention has following beneficial effect:
The sputtering source that sputtering system provided by the invention is oppositely arranged by least one pair of, secondary electron is back and forth movement between two targets, improves the sputter rate of target, thus improves the speed of film forming; Pedestal is located at outside heating region, can reduce the bombardment of plasma body to substrate, thus decrease the damage of film, improves the quality of film, and reduces the temperature of substrate, realize low-temperature sputter.
Accompanying drawing explanation
Fig. 1 is a kind of structural representation implemented sputtering method and prepare the secondary sputtering equipment of film;
Fig. 2 is the structural representation of the sputtering system of the embodiment of the present invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, sputtering system provided by the invention is described in detail.
Fig. 2 is the structural representation of embodiment of the present invention sputtering system.As shown in Figure 2, sputtering system comprises chamber 11, sputtering source 12, pedestal 13, vacuum system 14 and process gas supply system 15.Sputtering source 12 is located at the sidewall of chamber 11, and pedestal 13 is located at the bottom in chamber 11, vacuum system 14 for regulating the vacuum tightness in chamber 11, process gas supply system 15 for providing the process gas needed for implementing process in chamber 11, as Ar gas.
The present embodiment sputtering system is provided with two sputtering sources 12, is namely provided with the sidewall that a pair sputtering source, 12, two sputtering sources 12 are relatively located at chamber 11.Sputtering source 12 comprises target 121, magnet assemblies 122 and refrigerating unit 123, the sputter face of target 121 is towards chamber 11, it is formed by polylith magnet array or be spaced that the non-sputtered face that magnet assembly 122 is close to target 121 arranges magnet assembly 122, or an integrally-built magnet.The sputter face of the target 121 in two sputtering sources 12 is oppositely arranged, and the polarity of magnet assemblies 122 in two sputtering sources 12 is contrary, thus between two targets 121, form the magnetic field B perpendicular to sputter face.The non-sputtered face that refrigerating unit 123 is close to target 121 is arranged, for cooling target 121, to avoid target 121 temperature too high.Refrigerating unit 123 adopts water-chilling plant, also can adopt air cooling device.
Sputtering source 12 also comprises direct supply 124, the negative pole of direct supply 124 is electrically connected with target 121, thus forming the sputter face perpendicular to target 121 near the target 121 and be parallel to the electric field E of magnetic field B, the energy of plasma strike target 121 can be strengthened, and then improve sputter rate.
In the present embodiment, sputtering source 12 can be fixed on the locular wall of chamber 11, also can arrange headstock gear between sputtering source 12 and chamber 11, is separated (uncapping) for making sputtering source 12 and closes with chamber 11.As shown in Figure 2, headstock gear comprises turning axle 19, can rotate to side by sputtering source 12 by turning axle 19, and in Fig. 2, dotted line represents the state after being separated by sputtering source 12.In fact, each sputtering source 12 correspondence can arrange a headstock gear, also one of them or several sputtering source can be arranged headstock gear.
In sputter procedure, secondary electron acts on back and forth movement between two targets 121 by electric field E's, and sputtering particle is (as Ar
+) under the effect of electric field E, bombard the surface of target 121, target 121 is sputtered out.When high energy secondary electron has the component velocity beyond the sputter face being parallel to target 121, this secondary electron is by the Lorentz force action of magnetic field B, and the sputter face being parallel to target 121 circles.That is, secondary electron makes spiral back and forth movement under the effect of electric field E and magnetic field B.Under the effect of electric field E and magnetic field B, plasma body can be constrained between two targets 121 tightly, can high-speed sputtering be realized again.
It should be noted that, the present embodiment sputtering system comprises a pair sputtering source 12.In fact, sputtering system can comprise two to or more to sputtering source 12.Sputtering source 12 can be arranged on the sidewall of chamber 11, also can be arranged on roof or the diapire of chamber, as long as the sputter face of the target 121 in often pair of sputtering source 12 be oppositely arranged, the polarity of the magnet assemblies 122 in often pair of sputtering source 12 is contrary.In use, sidewall sputtering source 12 being located at chamber 11 is convenient to care and maintenance.
Pedestal 13 is for carrying and substrate transport.As shown in Figure 2, pedestal 13 comprises chip bench 131, transmission rig 132 and driving mechanism 133, chip bench 131 is for carrying substrates 18, and the two ends of transmission rig 132 connect output terminal and the chip bench 131 of driving mechanism 133 respectively, and the drive substrate platform 131 of driving mechanism 133 moves up and down.That is, pedestal 13 is located at the bottom in chamber 11, and can carry out oscilaltion campaign.During use, pedestal 13 is located at outside the B scope of magnetic field, preferably be located at outside heating region, more preferably the marginal position of heating region is located at, the wafer 18 being located at pedestal 13 loading end is bombarded to avoid sputter procedure high-energy electron, both reduce the temperature of substrate 18, realize low-temperature sputter technique; The damage of film can be reduced again, thus improve the quality of film.
Sputtering system also comprises support pin 16 and supports pin drive element 20, supports pin drive element 20 and drives support pin 16 to move up and down, substrate 18 to be positioned over the loading end (upper surface shown in figure) of pedestal 13 or the loading end jack-up from pedestal 13.Support pin 16 and support pin drive element 20 are more conducive to the transmission of substrate 18, to avoid wafer 18 damaged in transmitting procedure.
Sputtering system also comprises shield ring 17, and shield ring 17 is located at the edge of substrate 18, damages pedestal 13 for preventing.
In the present embodiment, chamber 11 adopts circular configuration, also can adopt square or other shape.The target 121 of sputtering source 12 can adopt square target, also can adopt other shape.
The present embodiment sputtering system may be used for the metal gate film in high speed, low temperature, undamaged preparation IC field, the film of encapsulation field, the ITO(indium tin oxide of LED field) film, prepare the above-mentioned all kinds of films that field and other field are suitable for sputtering realization of mentioning.
The sputtering system that the present embodiment provides is by the sputtering source of pair of opposing, and secondary electron is back and forth movement between two targets, improves the sputter rate of target, thus improves the speed of film forming; Pedestal is located at outside heating region, can reduce the bombardment of plasma body to substrate, thus decrease the damage of film, improves the quality of film, and reduces the temperature of substrate, realize low-temperature sputter.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (12)
1. a sputtering system, comprise chamber, sputtering source and pedestal, plasma generation is in described chamber, described pedestal is used for carrying substrates, it is characterized in that, comprise sputtering source described at least one pair of, often pair of described sputtering source is oppositely arranged, and described pedestal to be located in described chamber and to be positioned at outside heating region.
2. sputtering system according to claim 1, is characterized in that, described pedestal to be located in described chamber and to be positioned at the edge of heating region.
3. sputtering system according to claim 1, it is characterized in that, described sputtering source comprises target, magnet assemblies and refrigerating unit, the sputter face of described target is towards described chamber, and the sputter face of described target in often pair of described sputtering source is relative, described magnet assembly and described refrigerating unit are located at the non-sputtered face of described target, and the polarity of described magnet assemblies in often pair of described sputtering source is contrary.
4. sputtering system according to claim 3, is characterized in that, described sputtering source also comprises direct supply, and the negative pole of described direct supply is electrically connected with described target.
5. sputtering system according to claim 3, is characterized in that, comprises a pair sputtering source, and described sputtering source is located at the sidewall of described chamber.
6. sputtering system according to claim 5, is characterized in that, also comprises headstock gear, is separated for making described sputtering source and closes with described chamber.
7. sputtering system according to claim 1, is characterized in that, also comprises vacuum system, for regulating the vacuum tightness in described chamber.
8. sputtering system according to claim 1, is characterized in that, also comprises process gas supply system, for providing required process gas in described chamber.
9. sputtering system according to claim 1, it is characterized in that, described pedestal comprises chip bench, transmission rig and driving mechanism, described chip bench is used for carrying substrates, the two ends of described transmission rig connect the output terminal of described driving mechanism and described chip bench respectively, and the described chip bench of driving of described driving mechanism moves up and down.
10. sputtering system according to claim 9, it is characterized in that, also comprise and support pin and support pin drive element, described support pin drive element drives described support pin to move up and down, described substrate to be positioned over the loading end of described pedestal or the loading end jack-up from described pedestal.
11. sputtering systems according to claim 1, is characterized in that, also comprise shield ring, described shield ring is located at the edge of described substrate.
12. sputtering systems according to claim 1, is characterized in that, for the preparation of the metal gate film in IC field or the ito thin film of LED field.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310737548.XA CN104746031B (en) | 2013-12-29 | 2013-12-29 | A kind of sputtering system |
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| CN201310737548.XA CN104746031B (en) | 2013-12-29 | 2013-12-29 | A kind of sputtering system |
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| CN104746031A true CN104746031A (en) | 2015-07-01 |
| CN104746031B CN104746031B (en) | 2017-07-04 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107043915A (en) * | 2017-04-27 | 2017-08-15 | 柳州豪祥特科技有限公司 | The system that magnetron sputtering prepares ito thin film |
| CN107043916A (en) * | 2017-04-27 | 2017-08-15 | 柳州豪祥特科技有限公司 | It is easy to the magnetron sputtering of maintaining to prepare the system of ito thin film |
| CN107142452A (en) * | 2017-04-27 | 2017-09-08 | 柳州豪祥特科技有限公司 | The magnetron sputtering that quality of forming film can be improved prepares the system of ito thin film |
| WO2021093650A1 (en) * | 2019-11-11 | 2021-05-20 | 北京北方华创微电子装备有限公司 | Sputtering device |
| CN114728406A (en) * | 2020-11-04 | 2022-07-08 | 捷可勃斯夹头制造（苏州）有限公司 | Impact driver anvil |
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| CN102400107A (en) * | 2010-09-13 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering source and magnetron sputtering device |
| CN103261477A (en) * | 2010-12-08 | 2013-08-21 | Oc欧瑞康巴尔斯公司 | Apparatus and method for depositing a layer onto a substrate |
| CN103374705A (en) * | 2012-04-11 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering device |
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| CN1229269A (en) * | 1998-03-12 | 1999-09-22 | 松下电器产业株式会社 | Operating method and device of base plate and sticking checking method and device used thereof |
| CN102400107A (en) * | 2010-09-13 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering source and magnetron sputtering device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107043915A (en) * | 2017-04-27 | 2017-08-15 | 柳州豪祥特科技有限公司 | The system that magnetron sputtering prepares ito thin film |
| CN107043916A (en) * | 2017-04-27 | 2017-08-15 | 柳州豪祥特科技有限公司 | It is easy to the magnetron sputtering of maintaining to prepare the system of ito thin film |
| CN107142452A (en) * | 2017-04-27 | 2017-09-08 | 柳州豪祥特科技有限公司 | The magnetron sputtering that quality of forming film can be improved prepares the system of ito thin film |
| CN107142452B (en) * | 2017-04-27 | 2019-07-23 | 柳州豪祥特科技有限公司 | The magnetron sputtering that can be improved quality of forming film prepares the system of ito thin film |
| CN107043916B (en) * | 2017-04-27 | 2019-08-02 | 柳州豪祥特科技有限公司 | The system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film |
| WO2021093650A1 (en) * | 2019-11-11 | 2021-05-20 | 北京北方华创微电子装备有限公司 | Sputtering device |
| CN114728406A (en) * | 2020-11-04 | 2022-07-08 | 捷可勃斯夹头制造（苏州）有限公司 | Impact driver anvil |
| CN114728406B (en) * | 2020-11-04 | 2023-12-29 | 捷可勃斯夹头制造（苏州）有限公司 | Impact driver anvil |
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| CN104746031B (en) | 2017-07-04 |
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Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |