CN102364706A - Epitaxy production method of light emitting diode (LED) - Google Patents
Epitaxy production method of light emitting diode (LED) Download PDFInfo
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- CN102364706A CN102364706A CN2011103650099A CN201110365009A CN102364706A CN 102364706 A CN102364706 A CN 102364706A CN 2011103650099 A CN2011103650099 A CN 2011103650099A CN 201110365009 A CN201110365009 A CN 201110365009A CN 102364706 A CN102364706 A CN 102364706A
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Abstract
An epitaxy production method of a light emitting diode (LED) relates to a semiconductor technology field. A low temperature aluminum nitride gallium indium nucleating layer, an unintended doped gallium nitride layer, a doping gallium nitride layer, a doped GaN and non-doped GaN alternative periodic structure layer, an InGaN /GaN of multiple quantum well luminescence layer and a doped gallium nitride layer are successively grown on a substrate. In the invention, the doped GaN and non-doped GaN alternative growing periodic structure is inserted between the doping GaN and a multiple quantum well luminescence region so that internal capacitance of a GaN-based LED device can be increased and a current expansion ability of the GaN-based LED can be improved. Therefore, antistatic performance can be improved; a working voltage of the GaN-based LED can be reduced and a luminous efficiency can be raised.
Description
Technical field
The invention belongs to the semiconductor fabrication techniques field, be meant the epitaxial structure design and the growing method thereof of gallium nitride based light emitting diode especially.
Background technology
Current semiconductor lighting technology based on gallium nitride based light emitting diode (LED) is permeated to aspect of social life, like Landscape Lighting, and special lighting, and the LCD backlight source lighting etc.But the defective intrinsic owing to III-nitride is many; Dislocation density is big; Problems such as quality of materials difference; It is poor to have caused based on the semiconductor lighting device antistatic effect of III-nitride, and the positive assembling structure LED device current extended capability of tradition is poor, and this two aspect has limited it greatly and further got into high-end applications market.
Such as adding Zener diode in when encapsulation, static electrification ring etc. during operation, and in material structure, add various insertion layer, perhaps insert p type AlGaN and optimize its growth conditions or the like.These technology have been improved the antistatic property of GaN base LED to a certain extent, but still have following drawback:
1, complex process has increased the cost of manufacture of LED;
Improve when 2, can't take into account lifting and the antistatic effect of efficient simultaneously, normally improving efficient is cost to sacrifice antistatic effect, perhaps opposite, can't realize real commercial application;
3, insert layer process and can cause growth time to increase, reduced the production capacity of equipment.
Summary of the invention
Main purpose of the present invention is to provide a kind of epitaxial growth method that can improve the light-emitting diode of GaN base LED antistatic effect and luminous efficiency simultaneously.
Present invention resides in and adopt metallo-organic compound physical vapor epitaxy growing low temperature gallium nitride nucleating layer on the substrate; Then on low temperature gallium nitride nucleating layer the growth involuntary doped gallium nitride layer; The gallium nitride layer that growth N type mixes on involuntary doped gallium nitride layer again; Growing aluminum nitride gallium indium multiple quantum well light emitting layer; The gallium nitride layer that growing P-type mixes; It is characterized in that before growing aluminum nitride gallium indium multiple quantum well light emitting layer at least two structure sheafs that the cycle layer is formed that gallium nitride that on the gallium nitride layer that the N type mixes, is mixed by growth N type and non-doped gallium nitride replace.
The present invention solves the little problem with the current expansion ability of GaN base LED internal capacitance through the nGaN/uGaN periodic structure of between nGaN and luminescent layer, inserting modulation doping, reaches the internal capacitance that increases LED, improves GaN base LED current expansion ability; Thereby improve GaN base LED antistatic effect; And can reduce operating voltage, improve luminous efficiency, technology is simple; Not extra increase growth time has increased production capacity.
Substrate according to the invention is sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate.
Substrate according to the invention is a planar substrate, perhaps produces rule or erose graph substrate on the surface, and the bottom size of said graph substrate is 0.1～10um, and the figure spacing is 0.1～5um, and the figure height is 0.1～5um.
On substrate, the grow growth temperature of said low temperature gallium nitride nucleating layer of the present invention is 500～600 ℃, and growth pressure is 10000～90000Pa, and growth thickness is 0.01～0.1 μ m.
The grow growth temperature of involuntary doped gallium nitride layer of the present invention is 900～1200 ℃, and growth pressure is 10000～60000Pa, and growth thickness is 1～5 μ m.
The grow growth temperature of the gallium nitride layer that the N type mixes of the present invention is 1000～1100 ℃, and growth pressure is 10000～60000Pa, and growth thickness is 1～5 μ m, its N type doped chemical be Si or other can be in GaN as the element of N type impurity.
The grow growth temperature of the cycle layer that N type GaN and non-Doped GaN replace of the present invention is 900～1100 ℃; Growth pressure is 10000～60000Pa; Wherein the thickness of n type doped gallium nitride and non-Doped GaN is respectively 10～500nm and 10～500nm; The periodicity of periodic structure is 1～50, and its N type doped chemical is that Si or other can be as the elements of N type impurity in GaN, and doping content is 1 * 10
17Cm
-3-5 * 10
19Cm
-3
The growth temperature of growing aluminum nitride gallium indium multiple quantum well light emitting layer of the present invention is 650～900 ℃, and growth pressure is 20000～60000Pa, MQW Al
xIn
yGa
1-x-yThe potential barrier thickness of N is 0.005～0.05um, Ga
1-xIn
xN SQW thickness is 0.001～0.01um, and wherein the logarithm of MQW is 1～30 pair.
The growth temperature of the gallium nitride layer that growing P-type of the present invention mixes is 800～1100 ℃, and pressure is 10000～60000Pa, and growth thickness is 0.1～1 μ m.
Description of drawings
Fig. 1 adopts the SIMS test result figure of nGaN/uGaN modulate-doped layer LED structure.
Fig. 2 adopts the LED structural representation of nGaN/uGaN modulate-doped layer.
LED that Fig. 3 adopts the nGaN/uGaN modulate-doped layer and ESD test result figure with reference to LED.
Fig. 4 adopts the LED of nGaN/uGaN modulation-doped structure and the I-V curve of conventional LED.
Embodiment
One, the extension procedure of processing principle of light-emitting diode:
The low temperature gallium nitride nucleating layer of 1, on sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate substrate, growing, growth temperature is 500-600 ℃, and growth pressure is 10000-90000Pa, and growth thickness is 0.01-0.1 μ m.
2, the GaN layer of the involuntary doping of growth on low temperature gallium nitride nucleating layer, growth temperature is 900-1200 ℃, and growth pressure is 10000-60000Pa, and growth thickness is 1-5 μ m.
3, the GaN that growth N type mixes on the GaN of involuntary doping layer, growth temperature is 1000-1100 ℃, growth pressure is 10000-60000Pa, growth thickness is 1-5 μ m, its N type doped chemical be Si or other can be in GaN as the element of N type impurity.
4, the periodic structure layer that growth N type Doped GaN and non-Doped GaN replace on the gallium nitride that the N type mixes; Growth temperature is 1000-1100 ℃; Growth pressure is 10000-60000Pa, and wherein the thickness of N type doped gallium nitride and non-Doped GaN is respectively 10-500nm and 10-500nm, and the periodicity of periodic structure is 1-50; Its N type doped chemical is that Si or other can be as the elements of N type impurity in GaN, and doping content is 1 * 10
17Cm
-3-5 * 10
19Cm
-3
5, the Ga that on the GaN that the N type mixes, grows
1-xIn
xN/ (Al
xIn
yGa
1-x-yN) multiple quantum well light emitting district, growth temperature is 650-900 ℃, growth pressure is 20000-60000Pa, the Al of MQW
xIn
yGa
1-x-yThe N potential barrier thickness is 0.005-0.05um, Ga
1-xIn
xN SQW thickness is 0.001-0.01um, and wherein the logarithm of MQW is that 1-30 is right.
6, the gallium nitride layer that growing p-type mixes on multiquantum well region, growth temperature is 800-1100 ℃, and pressure is 10000-60000Pa, and growth thickness is 0.1-1 μ m.
Be substrate below with the sapphire, the further explain example:
Epitaxial device is the business PC that German AIXTRON company produces, and model is Crius 31x2 '.Used V clan source is ammonia (NH
3), III family metal organic source material is trimethyl gallium (TMGa) and trimethyl indium (TMIn), the carrier gas of using N2 to do remainder layer the carrier gas except the growth multiquantum well region is H
2, p type and n type impurity are respectively Mg, Si.
Behind the MOCVD growth apparatus of packing on 2 inches the Sapphire Substrate; Be warmed up to 1100 ℃ of high-temperature bakings earlier; Reative cell cools to 560 ℃ of growing low temperature aluminum indium gallium nitride nucleating layers then, and the flow of trimethyl gallium is 75 standard ml/min, and ammonia flow is 15 standard liter/min; Growth time is 100-200s, and chamber pressure is 60000Pa.
The nucleation and closure that heat up then and carry out GaN successively, the about 2um of involuntary Doped GaN layer grows.
The GaN layer 2um that mix of growing n-type then.
Next the periodic structure that 3 pairs of Doped GaN and the non-Doped GaN of growing replaces, doping content is 5 * 10
18Cm
-3, nGaN and uGaN thickness are respectively 20nm and 100nm.
Next cool to 700-900 ℃, and system is switched to N2 atmosphere, pressure is 40000Pa, growing gallium nitride indium/aluminum indium gallium nitride multiple quantum well light emitting district.
Again switch atmosphere to H2, temperature is elevated to 1000 ℃ of growth Mg doped p type gallium nitride layer 0.2um, promptly forms the growth of complete light emitting diode construction.
The introducing of this modulate-doped layer has improved antistatic effect and the luminous efficiency of GaN base LED simultaneously, is prepared into the led chip of use backlight of 0.25mm * 0.6mm, and its Human Body Model's antistatic effect is above 6000V, and voltage 3.15V is lower than conventional LED 3.3V.
Fig. 1 is the result of said LED structure SIMS (secondary ion mass spectroscopy) test, the wherein about 6E18cm of doping content of n type impurity Si
-3, the Si periodically variable position of mixing is exactly a uGaN/nGaN modulation-doped structure recited above between nGaN and the MQWs, and its periodicity is 3, wherein the about 5E18cm of nGaN doping content
-3, the about 40nm of thickness, the non-doping of uGaN, the about 90nm of thickness.
Fig. 2 is described complete each layer of LED structural representation; Be 30nm low temperature nucleating layer successively, involuntary Doped GaN (uGaN) of growth 2 micron thick is 2 microns Si doped n GaN then on it; Be 3 pairs of modulate-doped layers then; Being InGaN/GaN multiple quantum well light emitting layer then, is Mg doped p type GaN then, and this structural representation and SIMS test result are coincide.
Fig. 3 is the led chip ESD test result that adopts this structure, and under the Human Body Model 6000V condition, its antistatic percent of pass demonstrates very excellent antistatic property still up to 96%.
Fig. 4 is the I-V characteristic curve contrast of adopting the LED and the common LED of this modulation-doped structure; The LED that adopts this structure under 350mA operating voltage than the low 0.12V of conventional LED; Its cut-in voltage is basic identical; Can think that thus modulation-doped structure has improved the current expansion ability of LED, has reduced voltage.
Claims (1)
1. the epitaxial growth method of a light-emitting diode is included in and adopts metallo-organic compound physical vapor epitaxy growing low temperature gallium nitride nucleating layer on the substrate; Then on low temperature gallium nitride nucleating layer the growth involuntary doped gallium nitride layer; The gallium nitride layer that growth N type mixes on involuntary doped gallium nitride layer again; Growing aluminum nitride gallium indium multiple quantum well light emitting layer; The gallium nitride layer that growing P-type mixes; It is characterized in that before growing aluminum nitride gallium indium multiple quantum well light emitting layer at least two structure sheafs that the cycle layer is formed that gallium nitride that on the gallium nitride layer that the N type mixes, is mixed by growth N type and non-doped gallium nitride replace.
2,, it is characterized in that said substrate is sapphire, carborundum, silicon, GaAs, zinc oxide or lithium aluminate according to the epitaxial growth method of the said light-emitting diode of claim 1.
3, according to the epitaxial growth method of claim 1 or 2 said light-emitting diodes; It is characterized in that said substrate is a planar substrate; Perhaps produce rule or erose graph substrate on the surface; The bottom size of said graph substrate is 0.1～10um, and the figure spacing is 0.1～5um, and the figure height is 0.1～5um.
4, according to the epitaxial growth method of the said light-emitting diode of claim 1, it is characterized in that the growth temperature of the said low temperature gallium nitride nucleating layer of growth on substrate is 500～600 ℃, growth pressure is 10000～90000Pa, growth thickness is 0.01～0.1 μ m.
5, according to the epitaxial growth method of the said light-emitting diode of claim 1, the growth temperature that it is characterized in that the involuntary doped gallium nitride layer of said growth is 900～1200 ℃, and growth pressure is 10000～60000Pa, and growth thickness is 1～5 μ m.
6, according to the epitaxial growth method of the said light-emitting diode of claim 1; The growth temperature that it is characterized in that the gallium nitride layer that said growth N type mixes is 1000～1100 ℃; Growth pressure is 10000～60000Pa; Growth thickness is 1～5 μ m, its N type doped chemical be Si or other can be in GaN as the element of N type impurity.
7, according to the epitaxial growth method of the said light-emitting diode of claim 1; The growth temperature that it is characterized in that the cycle layer that said growth N type GaN and non-Doped GaN replace is 900～1100 ℃; Growth pressure is 10000～60000Pa, and wherein the thickness of n type doped gallium nitride and non-Doped GaN is respectively 10～500nm and 10～500nm, and the periodicity of periodic structure is 1～50; Its N type doped chemical is that Si or other can be as the elements of N type impurity in GaN, and doping content is 1 * 10
17Cm
-3-5 * 10
19Cm
-3
8, according to the epitaxial growth method of the said light-emitting diode of claim 1, it is characterized in that the growth temperature of said growing aluminum nitride gallium indium multiple quantum well light emitting layer is 650～900 ℃, growth pressure is 20000～60000Pa, MQW Al
xIn
yGa
1-x-yThe potential barrier thickness of N is 0.005～0.05um, Ga
1-xIn
xN SQW thickness is 0.001～0.01um, and wherein the logarithm of MQW is 1～30 pair.
9, according to the epitaxial growth method of the said light-emitting diode of claim 1, it is characterized in that the growth temperature of the gallium nitride layer that said growing P-type mixes is 800～1100 ℃, pressure is 10000～60000Pa, growth thickness is 0.1～1 μ m.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103107256A (en) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) epitaxial wafer |
| CN103107255A (en) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | Growth method of light-emitting diode (LED) epitaxial wafer |
| CN103178176A (en) * | 2013-03-13 | 2013-06-26 | 扬州中科半导体照明有限公司 | MQW (multiple quantum well)-growth applied GaN (gallium nitride)-based green-light LED (light emitting diode) epitaxial structure |
| CN103560185A (en) * | 2013-08-01 | 2014-02-05 | 圆融光电科技有限公司 | LED epitaxy structure |
| CN104505441A (en) * | 2014-10-17 | 2015-04-08 | 安徽三安光电有限公司 | Manufacturing method for nitride light emitting diode |
| CN104617192A (en) * | 2015-01-22 | 2015-05-13 | 华灿光电(苏州）有限公司 | Manufacturing method of light emitting diode epitaxial wafer |
| CN105304778A (en) * | 2015-11-20 | 2016-02-03 | 聚灿光电科技股份有限公司 | Epitaxial structure capable of raising GaN-based LED antistatic performance and preparation method |
| CN109037410A (en) * | 2018-08-10 | 2018-12-18 | 厦门乾照光电股份有限公司 | The semiconductor chip and its current extending and manufacturing method of light emitting diode |
| CN109545919A (en) * | 2018-11-09 | 2019-03-29 | 西安电子科技大学 | The effective UV light emitting diode and preparation method of N-shaped AlGaN layer modulation doping |
| US10263139B2 (en) | 2014-07-24 | 2019-04-16 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Fabrication method of nitride light emitting diodes |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060076574A1 (en) * | 2004-10-12 | 2006-04-13 | Liang-Wen Wu | Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capability |
| US20090142870A1 (en) * | 2007-05-02 | 2009-06-04 | Showa Denko K.K. | Manufacturing method of group iii nitride semiconductor light-emitting device |
| CN101752480A (en) * | 2008-12-16 | 2010-06-23 | 大连路美芯片科技有限公司 | Gallium nitride-based LED epitaxial wafer and growing method thereof |
| CN102214739A (en) * | 2011-05-24 | 2011-10-12 | 中国科学院半导体研究所 | Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) |
-
2011
- 2011-11-17 CN CN2011103650099A patent/CN102364706A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060076574A1 (en) * | 2004-10-12 | 2006-04-13 | Liang-Wen Wu | Gallium-nitride based light-emitting diodes structure with high reverse withstanding voltage and anti-ESD capability |
| US20090142870A1 (en) * | 2007-05-02 | 2009-06-04 | Showa Denko K.K. | Manufacturing method of group iii nitride semiconductor light-emitting device |
| CN101752480A (en) * | 2008-12-16 | 2010-06-23 | 大连路美芯片科技有限公司 | Gallium nitride-based LED epitaxial wafer and growing method thereof |
| CN102214739A (en) * | 2011-05-24 | 2011-10-12 | 中国科学院半导体研究所 | Method for roughing epitaxy of GaN (gallium nitride)-based LED (light-emitting diode) |
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| CN103107255B (en) * | 2012-12-21 | 2016-04-06 | 湘能华磊光电股份有限公司 | A kind of LED growing method |
| CN103107255A (en) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | Growth method of light-emitting diode (LED) epitaxial wafer |
| CN103107256A (en) * | 2012-12-21 | 2013-05-15 | 湘能华磊光电股份有限公司 | Light-emitting diode (LED) epitaxial wafer |
| CN103107256B (en) * | 2012-12-21 | 2016-03-30 | 湘能华磊光电股份有限公司 | A kind of LED |
| CN103178176A (en) * | 2013-03-13 | 2013-06-26 | 扬州中科半导体照明有限公司 | MQW (multiple quantum well)-growth applied GaN (gallium nitride)-based green-light LED (light emitting diode) epitaxial structure |
| CN103560185A (en) * | 2013-08-01 | 2014-02-05 | 圆融光电科技有限公司 | LED epitaxy structure |
| CN103560185B (en) * | 2013-08-01 | 2016-06-01 | 圆融光电科技有限公司 | LED epitaxial structure |
| US10263139B2 (en) | 2014-07-24 | 2019-04-16 | Xiamen Sanan Optoelectronics Technology Co., Ltd. | Fabrication method of nitride light emitting diodes |
| CN104505441A (en) * | 2014-10-17 | 2015-04-08 | 安徽三安光电有限公司 | Manufacturing method for nitride light emitting diode |
| WO2016058369A1 (en) * | 2014-10-17 | 2016-04-21 | 厦门市三安光电科技有限公司 | Method for manufacturing nitride light emitting diode |
| CN104505441B (en) * | 2014-10-17 | 2017-07-04 | 安徽三安光电有限公司 | A kind of iii-nitride light emitting devices preparation method |
| CN104617192B (en) * | 2015-01-22 | 2017-10-27 | 华灿光电(苏州）有限公司 | A kind of manufacture method of LED epitaxial slice |
| CN104617192A (en) * | 2015-01-22 | 2015-05-13 | 华灿光电(苏州）有限公司 | Manufacturing method of light emitting diode epitaxial wafer |
| CN105304778A (en) * | 2015-11-20 | 2016-02-03 | 聚灿光电科技股份有限公司 | Epitaxial structure capable of raising GaN-based LED antistatic performance and preparation method |
| CN105304778B (en) * | 2015-11-20 | 2018-03-30 | 聚灿光电科技股份有限公司 | Improve epitaxial structure of GaN base LED antistatic properties and preparation method thereof |
| CN109037410A (en) * | 2018-08-10 | 2018-12-18 | 厦门乾照光电股份有限公司 | The semiconductor chip and its current extending and manufacturing method of light emitting diode |
| CN109545919A (en) * | 2018-11-09 | 2019-03-29 | 西安电子科技大学 | The effective UV light emitting diode and preparation method of N-shaped AlGaN layer modulation doping |
| CN113659047A (en) * | 2021-07-22 | 2021-11-16 | 厦门三安光电有限公司 | Epitaxial structure and light emitting diode |
| CN113659047B (en) * | 2021-07-22 | 2022-09-13 | 厦门三安光电有限公司 | Epitaxial structure and light emitting diode |
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Application publication date: 20120229 |