CN102341887B - 包含硼的iii族氮化物发光器件 - Google Patents
包含硼的iii族氮化物发光器件 Download PDFInfo
- Publication number
- CN102341887B CN102341887B CN201080010286.1A CN201080010286A CN102341887B CN 102341887 B CN102341887 B CN 102341887B CN 201080010286 A CN201080010286 A CN 201080010286A CN 102341887 B CN102341887 B CN 102341887B
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- China
- Prior art keywords
- layer
- lattice constant
- component
- light
- ingan
- Prior art date
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title description 27
- 229910052796 boron Inorganic materials 0.000 title description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 17
- 150000004767 nitrides Chemical class 0.000 claims abstract description 6
- 230000004888 barrier function Effects 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 21
- 229910052582 BN Inorganic materials 0.000 description 20
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- 229910052738 indium Inorganic materials 0.000 description 14
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910052733 gallium Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 229910002059 quaternary alloy Inorganic materials 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 229910001199 N alloy Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910000807 Ga alloy Inorganic materials 0.000 description 5
- 229910000846 In alloy Inorganic materials 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910000238 buergerite Inorganic materials 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 229910002058 ternary alloy Inorganic materials 0.000 description 4
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/397,417 US8106403B2 (en) | 2009-03-04 | 2009-03-04 | III-nitride light emitting device incorporation boron |
US12/397417 | 2009-03-04 | ||
PCT/IB2010/050520 WO2010100572A1 (en) | 2009-03-04 | 2010-02-04 | Iii-nitride light emitting device incorporating boron |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102341887A CN102341887A (zh) | 2012-02-01 |
CN102341887B true CN102341887B (zh) | 2015-09-30 |
Family
ID=42102372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080010286.1A Active CN102341887B (zh) | 2009-03-04 | 2010-02-04 | 包含硼的iii族氮化物发光器件 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8106403B2 (zh) |
EP (1) | EP2404311B1 (zh) |
JP (1) | JP5702739B2 (zh) |
KR (1) | KR101732524B1 (zh) |
CN (1) | CN102341887B (zh) |
RU (1) | RU2523747C2 (zh) |
TW (1) | TWI497753B (zh) |
WO (1) | WO2010100572A1 (zh) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5899519B2 (ja) * | 2009-11-05 | 2016-04-06 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
US9178108B2 (en) * | 2010-05-24 | 2015-11-03 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
EP2408028B1 (en) * | 2010-07-16 | 2015-04-08 | LG Innotek Co., Ltd. | Light emitting device |
CN104412396B (zh) * | 2012-07-05 | 2021-11-09 | 亮锐控股有限公司 | 具有含氮和磷的发光层的发光二极管 |
US20160376170A1 (en) * | 2013-07-03 | 2016-12-29 | Koninklijke Philips N.V. | Light guiding member and light emitting arrangement |
FR3050872B1 (fr) * | 2016-04-27 | 2019-06-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Diode electroluminescente comprenant au moins une couche intermediaire de plus grand gap disposee dans au moins une couche barriere de la zone active |
CN108831978A (zh) * | 2018-04-24 | 2018-11-16 | 华灿光电(苏州)有限公司 | 一种发光二极管外延片及其制造方法 |
CN109065679B (zh) * | 2018-06-29 | 2020-05-19 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制造方法 |
CN109065682B (zh) * | 2018-06-29 | 2019-10-08 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制造方法 |
CN109802020B (zh) * | 2018-12-26 | 2020-05-19 | 华灿光电(浙江)有限公司 | 一种GaN基发光二极管外延片及其制备方法 |
CN109873061B (zh) * | 2019-01-08 | 2020-08-18 | 华灿光电(浙江)有限公司 | 一种氮化镓基发光二极管外延片及其制造方法 |
CN109888068B (zh) * | 2019-01-23 | 2020-04-14 | 华灿光电(浙江)有限公司 | 近紫外发光二极管外延片及其制备方法 |
CN110061104B (zh) * | 2019-02-28 | 2020-08-14 | 华灿光电(苏州)有限公司 | 氮化镓基发光二极管外延片的制造方法 |
CN112366257B (zh) * | 2020-09-27 | 2022-03-18 | 华灿光电(浙江)有限公司 | 发光二极管外延片及其制备方法 |
CN115050870B (zh) * | 2022-08-12 | 2022-11-08 | 江西兆驰半导体有限公司 | 一种GaN基发光二极管外延片及其制备方法 |
CN115172555B (zh) * | 2022-09-08 | 2022-11-18 | 江西兆驰半导体有限公司 | 高光效发光二极管的外延片及其制备方法、发光二极管 |
CN116581215B (zh) * | 2023-07-10 | 2023-09-22 | 江西兆驰半导体有限公司 | 发光二极管外延片及其制作方法 |
CN117239025B (zh) * | 2023-11-15 | 2024-02-20 | 江西兆驰半导体有限公司 | GaN基绿光LED外延片及其制备方法、LED |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3903364A (en) * | 1974-08-23 | 1975-09-02 | Ibm | High resolution line scanner |
US6359292B1 (en) * | 1998-03-11 | 2002-03-19 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element |
CN1555101A (zh) * | 1999-03-29 | 2004-12-15 | ���ǻ�ѧ��ҵ��ʽ���� | 氮化物半导体器件 |
US6836496B1 (en) * | 1999-03-24 | 2004-12-28 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6274924B1 (en) | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
JP2000196194A (ja) * | 1998-12-25 | 2000-07-14 | Sanyo Electric Co Ltd | 半導体発光素子 |
US6903364B1 (en) * | 1999-03-26 | 2005-06-07 | Matsushita Electric Industrial Co., Ltd. | Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication |
EP2149906A3 (en) * | 2002-08-29 | 2014-05-07 | Seoul Semiconductor Co., Ltd. | Light-emitting device having light-emitting diodes |
US7323721B2 (en) * | 2004-09-09 | 2008-01-29 | Blue Photonics Inc. | Monolithic multi-color, multi-quantum well semiconductor LED |
JP2009027022A (ja) * | 2007-07-20 | 2009-02-05 | Rohm Co Ltd | 窒化物半導体発光素子 |
-
2009
- 2009-03-04 US US12/397,417 patent/US8106403B2/en active Active
-
2010
- 2010-02-04 CN CN201080010286.1A patent/CN102341887B/zh active Active
- 2010-02-04 KR KR1020117022943A patent/KR101732524B1/ko active IP Right Grant
- 2010-02-04 WO PCT/IB2010/050520 patent/WO2010100572A1/en active Application Filing
- 2010-02-04 JP JP2011552538A patent/JP5702739B2/ja active Active
- 2010-02-04 RU RU2011140129/28A patent/RU2523747C2/ru active
- 2010-02-04 EP EP10704198.0A patent/EP2404311B1/en active Active
- 2010-03-01 TW TW099105840A patent/TWI497753B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3903364A (en) * | 1974-08-23 | 1975-09-02 | Ibm | High resolution line scanner |
US6359292B1 (en) * | 1998-03-11 | 2002-03-19 | Kabushiki Kaisha Toshiba | Semiconductor light emitting element |
US6836496B1 (en) * | 1999-03-24 | 2004-12-28 | Sanyo Electric Co., Ltd. | Semiconductor laser device |
CN1555101A (zh) * | 1999-03-29 | 2004-12-15 | ���ǻ�ѧ��ҵ��ʽ���� | 氮化物半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
WO2010100572A1 (en) | 2010-09-10 |
RU2011140129A (ru) | 2013-04-20 |
JP2012519953A (ja) | 2012-08-30 |
TW201041180A (en) | 2010-11-16 |
JP5702739B2 (ja) | 2015-04-15 |
EP2404311B1 (en) | 2017-04-12 |
CN102341887A (zh) | 2012-02-01 |
RU2523747C2 (ru) | 2014-07-20 |
US20100224852A1 (en) | 2010-09-09 |
TWI497753B (zh) | 2015-08-21 |
US8106403B2 (en) | 2012-01-31 |
KR20110124337A (ko) | 2011-11-16 |
KR101732524B1 (ko) | 2017-05-04 |
EP2404311A1 (en) | 2012-01-11 |
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Address after: California, USA Co-patentee after: KONINKLIJKE PHILIPS N.V. Patentee after: LUMILEDS LLC Address before: California, USA Co-patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V. Patentee before: Philips Ramildes Lighting Equipment Co.,Ltd. |
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