CN102339954B - Solar cell and preparation method thereof - Google Patents
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- CN102339954B CN102339954B CN201010232370.XA CN201010232370A CN102339954B CN 102339954 B CN102339954 B CN 102339954B CN 201010232370 A CN201010232370 A CN 201010232370A CN 102339954 B CN102339954 B CN 102339954B
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Abstract
The invention belongs to the field of solar cells, which discloses a solar cell. The solar cell has the following structure: a conducting layer performing the action of electrodes, a substrate, a nanometer column array formed by a semiconductor compound material, an optical activity material filling material, and a transparent conducting electrode layer and a protective electrode. The invention also discloses a preparation method of the solar cell. The solar cell provided by the invention is characterized in that the short circuit current of the solar cell is increased because of the semiconductor nanometer column array so as to improve the photoelectric conversion efficiency. Meanwhile, because the nanometer column array is filled with an organic active material, the periodic structure forms a photonic crystal structure, sunlight which is too late to be absorbed by the photoactive organic material can be irradiated again on the organic material by the reflecting action of the photonic crystal structure, and adsorption on the sunlight by the organic material is enhanced so as to improve the photoelectric conversion efficiency thereof.
Description
Technical field
The present invention relates to a kind of solar cell, relate in particular to the solar cell that a kind of photoactive layer contains hybrid structure.The invention still further relates to the preparation method of this solar cell.
Background technology
Fast development along with global economy, the consumption sharp increase of the energy, the flood tide of fossil fuel is used and has not only caused the day by day exhausted of the non-renewable resources such as coal, oil, natural gas, threaten the energy security of human society, and the discharge of great amount of carbon dioxide has also caused day by day serious social and environmental problems.Under these circumstances, be badly in need of developing not only economic performance but also high clean energy resource.Wherein, that solar energy is regarded as is available, the most promising, one of regenerative resource, causes people's concern.
The advantages such as the scheme of utilizing of solar energy mainly comprises photo-thermal and the large class of photovoltaic two, and wherein succinct, long-life of photovoltaic generation, system efficient with it, maintenance be simple enjoy favor, become the mainstream technology that solar energy utilizes.The core parts of photovoltaic generation are solar cells.In the solar cell of numerous kinds, the most ripe with monocrystalline silicon and polysilicon technology, be main flow in the market.But the cost of these solar cells is still higher at present, can only use in some special occasions.Therefore, make solar power generation obtain large-scale promotion, just must improve solar cell efficiency, reduce its cost.
Organic solar batteries technology is considered to one of attractive, the most cheap solar battery technology.It is all better to be on the one hand that the synthetic cost of organic material is low, function is easy to modulation, pliability and film forming; The manufacturing process of organic solar batteries does not need to relate to thin-film technique and expensive physics or the chemical process means such as inorganic matter sputter, chemical vapour deposition (CVD), high purity silicon crystal growth preparation, doping on the other hand, can by the film techniques such as spin coating or inkjet printing easily realize large area manufacture, manufacture process relatively simply, can use flexible substrate, environmental friendliness, light portable, element manufacturing cost also lower.Organic solar batteries has important ecology and advantage economically, and its research and development makes solar cell cost degradation become possibility, becomes the focus of regenerative resource area research, enjoys the concern of academia and industrial circle.
In recent years, along with the continuous exploration to organic solar battery material and device architecture, the efficiency of organic solar batteries has reached 6-7%.Yet realize commercialization, the photoelectric conversion efficiency of organic solar batteries is still lower, and the stability of device also needs to be further improved.Cause organic solar batteries photoelectric conversion efficiency main cause on the low side to have: the absorption spectrum of conjugated polymer does not mate with solar spectrum, on the low side to the utilance of sunlight; In addition, in the organic solar batteries of body heterojunction type, because heterojunction boundary increases, the exciton producing after active material absorption sunlight can dissociate rapidly and form electronics and hole freely, but compare with inorganic semiconductor, carrier mobility in organic substance is relatively low, most charge carrier does not also have enough time to be transferred to two electrodes of battery, just occurred compound, so just cause current loss, make the short circuit current of organic solar batteries lower, its photoelectric conversion efficiency is also on the low side.
Summary of the invention
The solar cell that the object of the present invention is to provide a kind of photoactive layer to contain hybrid structure, it can address the above problem.Another object of the present invention is to provide a kind of preparation method of this solar cell.
Technical scheme of the present invention is as follows:
A kind of solar cell provided by the invention; there is following structure: the conductive layer that has deposited electrode effect at the basal surface of substrate; at the upper surface of described substrate, be provided with perpendicular to described substrate top surface and the nano column array that formed by compound semiconductor material; in the gap of described nano column array, be filled with the light active material contour with described nano-pillar; on the surface of described nano column array and light active material formation, be provided with transparency conductive electrode layer, on described transparency conductive electrode layer surface, be provided with guard electrode.
Described solar cell, wherein, the thickness of described conductive layer is 5-15 μ m; Described guard electrode is wire-grid structure, and the thickness of described aperture plate is 5-10 μ m, and grid line width is 30-150 μ m, and spacing is 2-3mm; The average diameter of described nano-pillar is 30-1000nm, is highly 100-10000nm, and intercolumniation spacing is 30-200nm; Described compound semiconductor material and backing material are the nitride based material of III-V family in the periodic table of elements, or Zinc oxide-base material; Described nitride based material is AlN, GaN, InN, AlGaN, InGaN and AlInGaN; Described Zinc oxide-base material is ZnO, In-Zn-O, Al-Zn-O, Ga-Zn-O, Zr-Zn-O, Mg-Zn-O or Si-Zn-O; The material of described conductive layer and the material of guard electrode are aluminium, magnesium, gold, silver etc. and alloy thereof.
Described solar cell, wherein, for being filled in the light active material in nano column array space, can give for electronics, the mixture of acceptor material or for having the material of Electron donor acceptor structure in molecule, as follows:
Electron donor material can be thiophene-based material, comprising: polymer, as, P3HT, P3OT; Little molecule or oligomer, as, DCV5T, V5T, 4G1-3S, 3G1-1S; Aromatic amine material, as, TPD, TPA-Th-CN, TCVA; PPV class material, as, PPV, MEH-PPV, MDMO-PPV; Condensed ring aromatic, as, Tetracene, Pentacene, Pe-Th
2; Phthalocyanines dye, as, MPc (M is metal ion, as Cu, Zn etc.), H
2pc, SubPc (being sub-phthalocyanine material);
Electron acceptor can be fullerene and derivative thereof, as, PCBM (PC
60bM, PC
70bM), ThCBM, PCBB; PPV class material, as, CN-Ether-PPV, MEH-CN-PPV; Condensed ring aromatic, as, PTCBI, PTCDA, BBL etc.;
The material in molecule with Electron donor acceptor structure is material, the material that contains fluorenes unit and diazosulfide unit, the material that contains carbazole unit and thienopyrazine unit, the material that contains fluorenes unit and thienopyrazine unit, the material that contains thiophene unit and pyrrolopyrrole unit that contains carbazole unit and diazosulfide unit, the material that contains thiophene unit and thienopyrazine unit, as, PCPDTBT, PCDTBT, PDPPBDT etc.
Described solar cell, wherein, the material of described transparency conductive electrode can be but be not limited to conductive metal oxide film, conducting polymer composite, preferred conducting metal oxide, as, indium tin oxide (ITO), fluorine tin-oxide (FTO) or aluminium zinc oxide (AZO) etc., the thickness of described transparency conductive electrode is 80-120nm, transmitance is greater than 80%.
The solar cell of said structure, its preparation method comprises the following steps:
(1) clean substrate, make substrate surface clean, increase its surface adhesion force;
(2) at the certain thickness conductive electrode of backside deposition of above-mentioned substrate, can but be not limited to methods such as utilizing vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique, at the certain thickness metal of backside deposition of above-mentioned substrate as aluminium, magnesium, gold, silver and alloy thereof etc., then under protective atmosphere (oxygen-free environment being formed by nitrogen and/or inert gas), carry out annealing in process, form the electrode of ohmic contact;
(3) in vacuum chamber, can but be not limited to methods such as adopting chemical vapour deposition (CVD), induction coupled plasma etching, electron beam exposure, electron beam evaporation, cryogenic vacuum sputter and on above-mentioned substrate, prepare semiconductor nano-pillar array;
(4) can take vacuum altogether evaporation organic photoactive material mixture or by the mixture wiring solution-forming of light active material, fill it in the space of semiconductor nano-pillar array formation, carry out again the means such as plasma treatment, make to form good contacting between organic photoactive material and semiconductor nano-pillar array;
(5) on said structure, prepare layer of transparent conductive electrode, as transparent conductive metal oxide, can utilize the methods such as vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique, pulsed laser deposition, preparation layer of transparent conductive metal oxide film;
(6) on said structure, prepare one deck guard electrode, as metal grid mesh electrode, can utilize the methods such as silk screen print method, vacuum vapour deposition, on above-mentioned transparency conductive electrode, prepare metal as aluminium, magnesium, gold, silver and alloy grid electrode thereof;
(7) by the annealing in process in inert gas atmosphere of solar cell above, complete.
Solar cell of the present invention has following features:
First, the interface that has two classes can produce separation of charge in the service area of solar cell, i.e. interface between interface between electron donor-acceptor (EDA) material, organic material and semiconductor nano-pillar; Existence due to semiconductor nano-pillar array, the local electric transmission network that connecting electronic acceptor material forms effectively, for the transmission of electronics provides direct guiding path, reduce hop transmission number of times and the recombination probability of electronics, improve the efficiency of transmission of electronics; The optimization in the increase at exciton dissociation interface and carrier transport path, increases the short circuit current of solar cell, and then improves its photoelectric conversion efficiency.
Secondly, due to be elected to be the material of preparing nano column array be polar material, along c-axis direction, have very high piezoelectricity and spontaneous polarization field intensity, this strong polarization field can cause interface charge density greatly to improve, and causes the space of electronics and hole wave function spontaneous effective separated; Utilize the spontaneous separated high open circuit voltage that can form solar cell in its electronics and the space of hole under polarization field effect, thereby improve its photoelectric conversion efficiency.
Finally, owing to having filled organic photoactive material in nano column array, this kind of periodic structure formed photon crystal structure, the sunlight that photoactive organic material has little time to absorb can be irradiated on organic material by the reflex of photon crystal structure again, strengthen the absorption of organic material to sunlight, thereby also can improve its photoelectric conversion efficiency.
In a word, this kind of structure can improve short circuit current and the open circuit voltage of solar cell, and then improves the photoelectric conversion efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is the generalized section of solar battery structure;
Wherein, 10 is conductive electrode, and 20 is substrate, and 30 is nano column array, and 40 is light active material, and 50 is transparency conductive electrode, and 60 is guard electrode;
Fig. 2 is the plane graph of transparency conductive electrode and guard electrode;
Wherein, 50 transparency conductive electrodes, 60 is guard electrode.
Embodiment
A kind of solar cell provided by the invention; there is following structure: the conductive layer that has deposited electrode effect at the basal surface of substrate; upper surface at described substrate is provided with perpendicular to nano column array described substrate and that formed by compound semiconductor material; in the gap of described nano column array, be filled with the light active material contour with described nano-pillar; surface in described nano column array and light active material formation is provided with transparency conductive electrode layer, on described transparency conductive electrode layer surface, is provided with guard electrode.
Described solar cell, wherein, the thickness of described conductive layer is 5-15 μ m; Described guard electrode be wire-grid structure, the thickness of described aperture plate is 5-10 μ m, grid line width is 30-150 μ m, spacing is 2-3mm; The average diameter of described nano-pillar is 30-1000nm, is highly 100-10000nm, and intercolumniation spacing is 30-200nm; Described compound semiconductor material and backing material are the nitride based material of III-V family in the periodic table of elements, or Zinc oxide-base material; Described nitride based material is AlN, GaN, InN, AlGaN, InGaN and AlInGaN; Described Zinc oxide-base material is ZnO, In-Zn-O, Al-Zn-O, Ga-Zn-O, Zr-Zn-O, Mg-Zn-O or Si-Zn-O; The material of described conductive layer and the material of guard electrode are aluminium, magnesium, gold, silver etc. and alloy thereof.
Described solar cell, wherein, for being filled in the light active material in nano column array space, can give for electronics, the mixture of acceptor material or be the material of Electron donor acceptor structure in molecule; As follows:
Electron donor material can be thiophene-based material, comprising: polymer, as, P3HT, P3OT; Little molecule or oligomer, as, DCV5T, V5T, 4G1-3S, 3G1-1S; Aromatic amine material, as, TPD, TPA-Th-CN, TCVA; PPV class material, as, PPV, MEH-PPV, MDMO-PPV; Condensed ring aromatic, as, Tetracene, Pentacene, Pe-Th
2; Phthalocyanines dye, as, MPc (M is metal ion, as Cu, Zn etc.), H
2pc, SubPc (being sub-phthalocyanine material);
Electron acceptor can be fullerene and derivative thereof, as, PCBM (PC
60bM, PC
70bM), ThCBM, PCBB; PPV class material, as, CN-Ether-PPV, MEH-CN-PPV; Condensed ring aromatic, as, PTCBI, PTCDA, BBL etc.;
The material in molecule with Electron donor acceptor structure is for the material containing carbazole unit and diazosulfide unit, containing the material of fluorenes unit and diazosulfide unit, containing the material of carbazole unit and thienopyrazine unit, containing the material of fluorenes unit and thienopyrazine unit, containing the material of thiophene unit and pyrrolopyrrole unit, containing the material of thiophene unit and thienopyrazine unit etc., as, PCPDTBT, PCDTBT, PDPPBDT etc.
Described solar cell, wherein, the material of described transparency conductive electrode can be but be not limited to conductive metal oxide film, conducting polymer composite, preferred conducting metal oxide, as, indium tin oxide (ITO), fluorine tin-oxide (FTO) or aluminium zinc oxide (AZO) etc., the thickness of described transparency conductive electrode is 80-120nm, transmitance is greater than 80%.
The solar cell of said structure, its preparation method comprises the following steps:
(1) clean substrate, make substrate surface clean, increase its surface adhesion force;
(2) at the certain thickness conductive electrode of backside deposition of above-mentioned substrate, can but be not limited to methods such as utilizing vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique, at the certain thickness metal of backside deposition of above-mentioned substrate as aluminium, magnesium, gold, silver and alloy thereof etc., then under protective atmosphere, carry out annealing in process, form the electrode of ohmic contact;
(3) in vacuum chamber, can but be not limited to methods such as adopting chemical vapour deposition (CVD), induction coupled plasma etching, electron beam exposure, electron beam evaporation, cryogenic vacuum sputter and on above-mentioned substrate, prepare semiconductor nano-pillar array;
(4) can take vacuum altogether evaporation organic photoactive material mixture or by the mixture wiring solution-forming of light active material, fill it in the space of semiconductor nano-pillar array formation, carry out again the means such as plasma treatment, make to form good contacting between organic photoactive material and semiconductor nano-pillar array;
(5) on said structure, prepare layer of transparent conductive electrode, as transparent conductive metal oxide, can utilize the methods such as vacuum vapour deposition, magnetron sputtering method, chemical vapour deposition technique, pulsed laser deposition, preparation layer of transparent conductive metal oxide film;
(6) on said structure, prepare one deck guard electrode, as metal grid mesh electrode, can utilize the methods such as silk screen print method, vacuum vapour deposition, on above-mentioned transparency conductive electrode, prepare metal as aluminium, magnesium, gold, silver and alloy grid electrode thereof;
(7) oxygen-free environment (oxygen-free environment of the present invention by nitrogen and or/inert gas atmosphere forms) in annealing in process, make solar cell.
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in further detail.
Embodiment 1:
(1) ZnO substrate is to 0.5% H at mass percent concentration
2o
2with in the mixed solution of ammoniacal liquor, first soak 5min, then ultrasonic wave processes after 10min, cleans up post-drying standby with deionized water;
(2) utilize chemical vapour deposition technique, at the thick metallic copper of the backside deposition 10 μ m of above-mentioned substrate, then, under protective atmosphere, in 450 ℃, carry out annealing in process 40min, the metallic copper electrode of formation ohmic contact;
(3) in vacuum chamber, adopt electron beam evaporation on ZnO backing material, to prepare In-Zn-O nano column array, nano-pillar average diameter is 100nm, is highly 1000nm, intercolumniation spacing is 100nm;
(4) preparation P3HT and PCBM mass ratio is 4: 1, mixed uniformly, total concentration is 15mg/ml chlorobenzene solution, mixed solution is filled in the space that semiconductor nano-pillar array forms, by drying again after self assembly, makes good contacting between organic material and semiconductor nano-pillar array;
(5) utilize chemical vapour deposition technique, on above-mentioned active layer, preparing thickness is 100nm transparent conductive metal oxide AZO thin layer;
(6) utilize silk screen print method, on above-mentioned transparent conductive metal oxide film layer, prepare aluminium grid electrode, the thickness of aperture plate is 8 μ m, and grid line width is 100 μ m, and spacing is 2mm;
(7) annealing in process in inert gas atmosphere, makes solar cell.
Embodiment 2:
(1) AlN substrate is to 0.5% H at mass percent concentration
2o
2with in the mixed solution of ammoniacal liquor, first soak 5min, then ultrasonic wave processes after 10min, cleans up post-drying standby with deionized water;
(2) utilize vacuum vapour deposition, at the thick metallic aluminium of the backside deposition 5 μ m of above-mentioned substrate, then, under protective atmosphere, in 350 ℃, carry out annealing in process 20min, the metal aluminium electrode of formation ohmic contact;
(3) in vacuum chamber, adopt and from chemical vapour deposition technique, on AlN substrate, prepare AlN material nano post array, nano-pillar average diameter is 30nm, is highly 100nm, intercolumniation spacing is 30nm;
(4) utilizing altogether vapour deposition method of vacuum, is 1: 1 by 4G1-3S and PCBM in mass ratio, is filled in the space of semiconductor nano-pillar array formation, then carries out the means such as plasma treatment, makes good contacting between organic material and semiconductor nano-pillar array;
(5) utilize vacuum vapour deposition, on above-mentioned active layer, preparing thickness is 80nm transparent conductive metal oxide ito thin film layer;
(6) utilize silk screen print method, on above-mentioned transparent conductive metal oxide film layer, prepare silver-colored grid electrode, the thickness of aperture plate is 5 μ m, and grid line width is 30 μ m, and spacing is 2mm;
(7) annealing in process in nitrogen atmosphere, makes solar cell.
Embodiment 3:
(1) Zr-Zn-O substrate is to 0.5% H at mass percent concentration
2o
2with in the mixed solution of ammoniacal liquor, first soak 5min, then ultrasonic wave processes after 10min, cleans up post-drying standby with deionized water;
(2) utilize vacuum vapour deposition, at the thick magnesium metal of the backside deposition 8 μ m of above-mentioned substrate, then, under protective atmosphere, in 300 ℃, carry out annealing in process 35min, the magnesium metal electrode of formation ohmic contact;
(3), in vacuum chamber, adopt cryogenic vacuum sputtering method on Zr-Zn-O substrate, to prepare Zr-Zn-O material nano post array;
(4) preparation P3HT and PCBM mass ratio is 1: 4, mixed uniformly, total concentration is 30mg/ml chlorobenzene solution, mixed solution is filled in the space that semiconductor nano-pillar array forms, by drying again after self assembly, makes good contacting between organic material and semiconductor nano-pillar array;
(5) utilize pulsed laser deposition, on above-mentioned active layer, preparing thickness is 100nm transparent conductive metal oxide ito thin film layer;
(6) utilize vacuum vapour deposition, on above-mentioned transparent conductive metal oxide film layer, prepare copper alloy grid electrode, the thickness of aperture plate is 5 μ m, and grid line width is 80 μ m, and spacing is 2.5mm;
(7) annealing in process in inert gas atmosphere, makes solar cell.
Embodiment 4:
(1) AlGaN substrate is to 0.5% H at mass percent concentration
2o
2with in the mixed solution of ammoniacal liquor, first soak 5min, then ultrasonic wave processes after 10min, cleans up post-drying standby with deionized water;
(2) utilize magnetron sputtering method, at the thick argent of the backside deposition 15 μ m of above-mentioned substrate, then, under protective atmosphere, in 400 ℃, carry out annealing in process 30min, the argent electrode of formation ohmic contact;
(3) in vacuum chamber, adopt induction coupled plasma etching method on AlGaN substrate, to prepare AlGaN material nano post array, nano-pillar average diameter is 1000nm, is highly 10000nm, intercolumniation spacing is 200nm;
(4) utilizing altogether vapour deposition method of vacuum, is 1: 1 by CuPc and PCBM in mass ratio, is filled in the space of semiconductor nano-pillar array formation, then carries out the means such as plasma treatment, makes good contacting between organic material and semiconductor nano-pillar array;
(5) utilize magnetron sputtering method, on above-mentioned active layer, preparing thickness is 120nm transparent conductive metal oxide FTO thin layer;
(6) utilize vacuum vapour deposition, on above-mentioned transparent conductive metal oxide film layer, prepare magnesium grid electrode, the thickness of aperture plate is 10 μ m, and grid line width is 150 μ m, and spacing is 3mm;
(7) annealing in process in inert gas atmosphere, makes solar cell.
Embodiment 5:
(1) InN substrate is to 0.5% H at mass percent concentration
2o
2with in the mixed solution of ammoniacal liquor, first soak 5min, then ultrasonic wave processes after 10min, cleans up post-drying standby with deionized water;
(2) utilize vacuum vapour deposition method altogether, at thick magnesium, the silver alloy of the backside deposition 10 μ m of above-mentioned substrate, then, under protective atmosphere, in 350 ℃, carry out annealing in process 20min, magnesium, the alloy silver electrode of formation ohmic contact;
(3) in vacuum chamber, adopt induction coupled plasma etching method on InN substrate, to prepare Al-Zn-O material nano post array, nano-pillar average diameter is 500nm, is highly 5000nm, intercolumniation spacing is 150nm;
(4) poly-(2-methoxyl group-5-(2 '-ethyl hexyl oxy)-1 of preparation, 4-is to phenylacetylene) (same under MEH-PPV) and [6,6] phenyl-C61-methyl butyrate (PCBM, lower with) amount than be 4: 1, the chlorobenzene solution that mixed uniformly, total concentration is 15mg/ml, mixed solution is filled in the space that semiconductor nano-pillar array forms, by drying again after self assembly, makes good contacting between organic material and semiconductor nano-pillar array;
(5) utilize vacuum vapour deposition, on above-mentioned active layer, preparing thickness is 90nm transparent conductive metal oxide FTO thin layer;
(6) utilize silk screen print method, on above-mentioned transparent conductive metal oxide film layer, prepare copper grid electrode, the thickness of aperture plate is 6 μ m, and grid line width is 100 μ m, and spacing is 2.5mm;
(7) annealing in process in inert gas atmosphere, makes solar cell.
Embodiment 6:
(1) InGaN substrate is to 0.5% H at mass percent concentration
2o
2with in the mixed solution of ammoniacal liquor, first soak 5min, then ultrasonic wave processes after 10min, cleans up post-drying standby with deionized water;
(2) utilize vacuum vapour deposition, at thick copper, the aluminium alloy of the backside deposition 12 μ m of above-mentioned substrate, then, under protective atmosphere, in 400 ℃, carry out annealing in process 30min, copper, the aluminum alloy anode of formation ohmic contact;
(3) in vacuum chamber, adopt electron beam exposure method on InGaN substrate, to prepare Zr-Zn-O material nano post array, nano-pillar average diameter is 800nm, is highly 8000nm, intercolumniation spacing is 180nm;
(4) preparation MEH-PPV and PCBM mass ratio is 1: 4, mixed uniformly, total concentration is 30mg/ml chlorobenzene solution, mixed solution is filled in the space of semiconductor nano-pillar array formation, first dry and carry out afterwards the means such as plasma treatment, make good contacting between organic material and semiconductor nano-pillar array;
(5) utilize pulsed laser deposition, on above-mentioned active layer, preparing thickness is 110nm transparent conductive metal oxide AZO thin layer;
(6) utilize silk screen print method, prepare magnesium, silver-colored grid electrode on above-mentioned transparent conductive metal oxide film layer, the thickness of aperture plate is 8 μ m, and grid line width is 120 μ m, and spacing is 2mm;
(7) annealing in process in inert gas atmosphere, makes solar cell.
Should be understood that, the above-mentioned statement for preferred embodiment of the present invention is comparatively detailed, can not therefore think the restriction to scope of patent protection of the present invention, and scope of patent protection of the present invention should be as the criterion with claims.
Claims (9)
1. a solar cell, it is characterized in that, this solar cell has following structure: the conductive layer that has deposited electrode effect at the basal surface of substrate, at the upper surface of described substrate, be provided with perpendicular to described substrate top surface and the nano column array that formed by compound semiconductor material, in the gap of described nano column array, be filled with the light active material contour with described nano-pillar, on the surface of described nano column array and light active material formation, be provided with transparency conductive electrode layer, on described transparency conductive electrode layer surface, be provided with guard electrode;
Described light active material is the mixture of electron donor material and acceptor material or is in molecule, to have the material of Electron donor acceptor structure;
In described nano column array, filled light active material, this kind of periodic structure formed photon crystal structure.
2. solar cell according to claim 1, is characterized in that, the thickness of described conductive layer is 5-15 μ m; Described guard electrode is wire-grid structure, and the thickness of this aperture plate is 5-10 μ m, and grid line width is 30-150 μ m, and spacing is 2-3mm.
3. solar cell according to claim 1, is characterized in that, the average diameter of described nano-pillar is 30-1000nm, is highly 100-10000nm, and intercolumniation spacing is 30-200nm.
4. solar cell according to claim 1, is characterized in that, described compound semiconductor material and backing material are the nitride based material of III-V family in the periodic table of elements, or Zinc oxide-base material; Described nitride based material is AlN, GaN, InN, AlGaN, InGaN and AlInGaN; Described Zinc oxide-base material is ZnO, In-Zn-O, Al-Zn-O, Ga-Zn-O, Zr-Zn-O, Mg-Zn-O or Si-Zn-O.
5. solar cell according to claim 1, is characterized in that, described electron donor material is thiophene-based material; Described electron acceptor material is fullerene and derivative thereof; The material in described molecule with Electron donor acceptor structure is material, the material that contains fluorenes unit and diazosulfide unit, the material that contains carbazole unit and thienopyrazine unit, the material that contains fluorenes unit and thienopyrazine unit, the material that contains thiophene unit and pyrrolopyrrole unit that contains carbazole unit and diazosulfide unit, the material that contains thiophene unit and thienopyrazine unit.
6. solar cell according to claim 1, is characterized in that, the material of described transparency conductive electrode layer is conductive metal oxide film or conducting polymer composite; The thickness of described transparency conductive electrode layer is 80-120nm.
7. solar cell according to claim 1, is characterized in that, the material of described conductive layer and the material of guard electrode are aluminium, magnesium, gold, silver and alloy thereof.
8. a preparation method for the arbitrary described solar cell of claim 1 to 7, is characterized in that, comprises the steps:
At basal surface deposition one deck of surface-treated substrate, play the conductive layer of electrode effect;
Upper surface at described substrate forms the nano column array being comprised of compound semiconductor material;
Light active material is filled in the space of described nano column array;
On the upper surface of described nano column array and light active material formation, deposit layer of transparent conductive electrode layer;
Surface deposition guard electrode at described transparency conductive electrode layer;
Annealing in process in inert gas atmosphere, makes described solar cell;
Wherein, described light active material is the mixture of electron donor material and acceptor material or is in molecule, to have the material of Electron donor acceptor structure;
In described nano column array, filled light active material, this kind of periodic structure formed photon crystal structure.
9. the preparation method of solar cell according to claim 8, is characterized in that, at described conductive layer, obtains in preparation process, also comprises the steps: in oxygen-free environment, and described conductive layer is carried out to annealing in process 20～40min in 300～450 ℃.
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| TW201344924A (en) * | 2012-04-23 | 2013-11-01 | Advanced Wireless Semiconductor Company | Negative electrode structure of concentrator photovoltaic |
| CN105043423B (en) * | 2015-07-24 | 2018-06-05 | 宋金会 | Position sensor |
| CN105845829B (en) * | 2016-03-30 | 2019-05-03 | 中国科学院福建物质结构研究所 | A kind of perovskite solar battery |
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