CN102332460B - 带有绝缘埋层的图像传感器及其制作方法 - Google Patents
带有绝缘埋层的图像传感器及其制作方法 Download PDFInfo
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- CN102332460B CN102332460B CN201110229907A CN201110229907A CN102332460B CN 102332460 B CN102332460 B CN 102332460B CN 201110229907 A CN201110229907 A CN 201110229907A CN 201110229907 A CN201110229907 A CN 201110229907A CN 102332460 B CN102332460 B CN 102332460B
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- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 69
- 230000003287 optical effect Effects 0.000 claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 238000002955 isolation Methods 0.000 claims description 26
- 238000009413 insulation Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 230000006911 nucleation Effects 0.000 claims description 4
- 238000010899 nucleation Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 14
- 239000002245 particle Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- -1 oxonium ion Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 235000018734 Sambucus australis Nutrition 0.000 description 1
- 244000180577 Sambucus australis Species 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- OGFXBIXJCWAUCH-UHFFFAOYSA-N meso-secoisolariciresinol Natural products C1=2C=C(O)C(OC)=CC=2CC(CO)C(CO)C1C1=CC=C(O)C(OC)=C1 OGFXBIXJCWAUCH-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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CN201110229907A CN102332460B (zh) | 2011-08-11 | 2011-08-11 | 带有绝缘埋层的图像传感器及其制作方法 |
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CN201110229907A CN102332460B (zh) | 2011-08-11 | 2011-08-11 | 带有绝缘埋层的图像传感器及其制作方法 |
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CN102332460A CN102332460A (zh) | 2012-01-25 |
CN102332460B true CN102332460B (zh) | 2012-10-24 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102544045B (zh) * | 2012-02-01 | 2014-04-16 | 中国科学院上海高等研究院 | 带有绝缘埋层的图像传感器及其制备方法 |
CN108461514A (zh) * | 2018-03-28 | 2018-08-28 | 德淮半导体有限公司 | Cmos图形传感器的隔离结构及其形成方法 |
CN116895671B (zh) * | 2023-09-11 | 2023-12-12 | 粤芯半导体技术股份有限公司 | 像素隔离结构及其制备方法、图像传感器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1797762A (zh) * | 2004-11-24 | 2006-07-05 | 中国台湾积体电路制造股份有限公司 | 半导体晶片的半导体结构及其形成方法 |
CN101740597A (zh) * | 2008-11-21 | 2010-06-16 | 索尼株式会社 | 固态成像装置、固态成像装置的制造方法和成像设备 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US7276748B2 (en) * | 2005-02-28 | 2007-10-02 | International Business Machines Corporation | Body potential imager cell |
EP1722422A3 (fr) * | 2005-05-13 | 2007-04-18 | Stmicroelectronics Sa | Circuit intégré comprenant une photodiode de type à substrat flottant et procédé de fabrication correspondant |
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1797762A (zh) * | 2004-11-24 | 2006-07-05 | 中国台湾积体电路制造股份有限公司 | 半导体晶片的半导体结构及其形成方法 |
CN101740597A (zh) * | 2008-11-21 | 2010-06-16 | 索尼株式会社 | 固态成像装置、固态成像装置的制造方法和成像设备 |
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Effective date of registration: 20200330 Address after: 233000 building 109, No.1, sunshine garden, Liucheng Town, Huaiyuan County, Bengbu City, Anhui Province Patentee after: Bengbu Hangyu Intellectual Property Service Co.,Ltd. Address before: 266200 aoshanwei sub district office, Jimo District, Qingdao, Shandong Province Patentee before: Qingdao cruiser Technology Co.,Ltd. |
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