CN102324897A - Improved broadband self-bias Darlington linear amplifier circuit - Google Patents
Improved broadband self-bias Darlington linear amplifier circuit Download PDFInfo
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- CN102324897A CN102324897A CN201110199054A CN201110199054A CN102324897A CN 102324897 A CN102324897 A CN 102324897A CN 201110199054 A CN201110199054 A CN 201110199054A CN 201110199054 A CN201110199054 A CN 201110199054A CN 102324897 A CN102324897 A CN 102324897A
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- darlington
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Abstract
The invention discloses an improved broadband self-bias Darlington linear amplifier circuit, which is characterized in that: a first crystal triode, a second crystal triode and a third crystal triode constitute a Darlington structure, namely, the emitter of the first crystal triode is connected with the base of the second crystal triode, the collector of the second crystal triode is connected with the emitter of the third crystal triode, and the collector of the third crystal triode is connected with the collector of the first crystal triode; and the second crystal triode and the third crystal triode constitute a common-emitter common-base Darlington post expansion high-frequency bandwidth. The improved broadband self-bias Darlington linear amplifier circuit has the advantages that: in the second crystal triode Q2 and the third crystal triode Q3, a cascade structure is taken as a post of the Darlington amplifier, so that the bandwidth is expanded, and third-order intermodulation IP3 is increased simultaneously. The gain is smooth till 4.5 GHz, and the variable of +/-1dB is kept. The gain requirements of different frequency points are met.
Description
Technical field
The present invention is a kind of high-performance InGaP hetero-junction bipolar transistor microwave monolithic amplifier.Particularly a kind of modified model broadband automatic biasing Darlington linear amplifier circuit.Belong to the microwave monolithic integrated circuit field.
Background technology
The darlington amplifier bandwidth, gain stabilization, size is little, encapsulates easyly, is easy to characteristics such as cascade.Darlington gain amplifier technology has been widely used in the RF Wireless-wire and has used.The bandwidth and the power index of comprehensive low-power amplifier; To adopt InGaP/GaAs HBT technology, circuit adopts darlington structure, and Amplifier Design is taken into account each frequency range of present mobile communication as far as possible; Adopt single power supply; Have good input, output stationary wave characteristic and flat gain characteristic, make amplifier except being used in TD-SCDMA, go for other communications bands.Under the prerequisite that guarantees properties of product and reliability, optimize chip design, reduce chip area, make product possess high as far as possible cost performance.Be two GSM of third-generation mobile communication system systems, narrowband CDMA system or the TDS-CDMA system used at present to a common requirement of base station power amplifier all be high linear.And require satisfying the high as far as possible power added efficiency of realization under the linear prerequisite that requires.Thereby in the circuit design process, take into full account high linear requirement how to satisfy power amplifier and realize high efficiency.
Summary of the invention
What the present invention proposed is a kind of modified model broadband automatic biasing Darlington linear amplifier circuit, and based on the improved automatic biasing darlington amplifier of traditional darlington structure, its purpose is intended to improve gain flatness, improves the linear IP3 (third order intermodulation) of circuit.Forms the bandwidth of grade extended high frequency behind the Darlington of common-emitter common-base by three utmost point autumns of two crystal pipes,, improved linear characteristic through the linear compensation circuit structure Design.Technical solution of the present invention: it is characterized in that the first transistor Q1, the second transistor Q2, the 3rd transistor Q3 form darlington structure; Promptly the base stage of the emitter of the first transistor Q1 and the second transistor Q2 is joined; The emitter of the collector electrode of the second transistor Q2 and the 3rd transistor Q3 joins; The collector electrode of the collector electrode of the 3rd transistor Q3 and the first transistor Q1 joins, and is made up of the bandwidth of level extended high frequency behind the Darlington of common-emitter common-base the second transistor Q2, the 3rd transistor Q3.
Advantage of the present invention: the present invention second transistor Q2, the 3rd transistor Q3 adopt the back level of cascode structure as darlington amplifier, have expanded bandwidth, improve third order intermodulation IP3 simultaneously.Until the 4.5GHz gain is all more smooth, the variable quantity of maintenance ± 1dB.Can satisfy the gain requirement of different frequent points.
Description of drawings:
Accompanying drawing 1 is traditional automatic biasing darlington amplifier circuit diagram.
Accompanying drawing 2 is automatic biasing Darlington circuit structural representations of the present invention.
Accompanying drawing 3 is linear compensation automatic biasing darlington structure sketch mapes of the present invention.
Accompanying drawing 4a is the present invention and traditional darlington amplifier small signal gain contrast sketch map.
Accompanying drawing 4b is small signal gain of the present invention, input and output reflection loss sketch map.
Accompanying drawing 5 is the sketch mapes that concern of power output 1dB compression point of the present invention and frequency.
Accompanying drawing 6a is the present invention and traditional darlington amplifier output ip3 and frequency relation contrast signal.
Accompanying drawing 6b is the present invention and traditional darlington amplifier input ip3 and frequency relation contrast sketch map.
Embodiment
Contrast accompanying drawing 2, its structure are to adopt improved automatic biasing darlington structure.Form darlington structure by transistor Q1, transistor Q2, transistor Q3; Different with traditional darlington structure, the bandwidth of level extended high frequency behind the Darlington of transistor Q2, transistor Q3 composition common-emitter common-base in the dotted line block diagram as shown in Figure 2.Transistor Q2 can increase puncture voltage and the bandwidth of expanding darlington amplifier.As shown in Figure 4; The traditional structure gain reduces along with frequency increases gain gradually; Transistor Q2 of the present invention, transistor Q3 adopt the back level of cascode structure as darlington amplifier, have expanded bandwidth, improve the linearity (third order intermodulation point IP3) simultaneously.Until the 4.5GHz gain is all more smooth, the flatness of maintenance ± 1dB.Can satisfy the gain requirement of different frequent points.Like Fig. 4 a, the present invention and the contrast of traditional darlington amplifier small signal gain, zero is that the small signal gain of traditional darlington amplifier and the relation curve ◇ of frequency are the small signal gain of modified model automatic biasing darlington amplifier of the present invention and the relation curve of frequency.
Contrast accompanying drawing 3, its structure are to go up in improved darlington structure (Fig. 2) to adopt linear compensation circuit circuit (in the frame of broken lines), improve the later linearity of 2GHz.Compensating circuit is selected transistor Q5 for use, and the base stage of transistor Q5 is connected with collector electrode and receives the output of Darlington through resistance R 8; Transistor Q5 emitter is received the common-emitter common-base point of Darlington.Compensating circuit is to the almost not influence of small-signal parameters such as the gain of circuit, standing wave; (like Fig. 4 b small signal gain of the present invention, input and output reflection loss sketch map; △ is that small signal gain zero is the output reflection loss for input reflection loss ◇), to the influence of P1dB also very little (like the sketch map that concerns of accompanying drawing 5 power output 1dB compression point and frequency).To the linear characteristic obvious effect, the input and output third order intermodulation contrast that is respectively input and output third order intermodulation of the present invention and traditional structure as shown in Figure 6 (zero be third order intermodulation of the present invention for the third order intermodulation ◇ of traditional structure).The OIP3 of same point improves 4 to 5 dB.Linear bandwidth is expanded 2GHz to 3GHz.
Transistor BJTs described herein (bipolar junction transistors); HBTs (heterojunction bipolar transistors); DHBT (double heterojunction bipolar transistor), perhaps PHEMT (pseudomorphic high electron mobility transistor).All semiconductors comprise compound semiconductor III-V semiconductor, SiGe, InGaP, InP, GaAs.
Device is the standard HBT technology of foundry.
Claims (1)
1. modified model broadband automatic biasing Darlington linear amplifier circuit; It is characterized in that first transistor (Q1), second transistor (Q2), the 3rd transistor (Q3) composition darlington structure; Promptly the base stage of the emitter of first transistor (Q1) and second transistor (Q2) is joined; The emitter of the collector electrode of second transistor (Q2) and the 3rd transistor (Q3) joins; The collector electrode of the collector electrode of the 3rd transistor (Q3) and first transistor (Q1) joins, and is made up of the bandwidth of level extended high frequency behind the Darlington of common-emitter common-base second transistor (Q2), the 3rd transistor (Q3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110199054A CN102324897A (en) | 2011-07-18 | 2011-07-18 | Improved broadband self-bias Darlington linear amplifier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110199054A CN102324897A (en) | 2011-07-18 | 2011-07-18 | Improved broadband self-bias Darlington linear amplifier circuit |
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| CN102324897A true CN102324897A (en) | 2012-01-18 |
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| CN201110199054A Pending CN102324897A (en) | 2011-07-18 | 2011-07-18 | Improved broadband self-bias Darlington linear amplifier circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113291A (en) * | 2014-07-28 | 2014-10-22 | 中国电子科技集团公司第二十四研究所 | Low-voltage Darlington amplifier |
| CN104124931A (en) * | 2014-08-07 | 2014-10-29 | 苏州容芯微电子有限公司 | Broadband amplifier |
| CN104539247A (en) * | 2014-12-18 | 2015-04-22 | 青岛歌尔声学科技有限公司 | Wideband amplifier circuit of Darlington structure |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4706038A (en) * | 1986-09-29 | 1987-11-10 | Motorola, Inc. | Wideband linear Darlington cascode amplifier |
| US20100141339A1 (en) * | 2008-10-17 | 2010-06-10 | Day Chris J | Apparatus and Method for Broadband Amplifier Linearization |
-
2011
- 2011-07-18 CN CN201110199054A patent/CN102324897A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4706038A (en) * | 1986-09-29 | 1987-11-10 | Motorola, Inc. | Wideband linear Darlington cascode amplifier |
| US20100141339A1 (en) * | 2008-10-17 | 2010-06-10 | Day Chris J | Apparatus and Method for Broadband Amplifier Linearization |
Non-Patent Citations (2)
| Title |
|---|
| 《电讯技术》 20101130 丁华锋,严维敏,王钟,胡善文,高怀 0.1-4GHz达林顿-共射共基结构的增益模块 第80-84页 1 第50卷, 第11期 * |
| 丁华锋,严维敏,王钟,胡善文,高怀: "0.1—4GHz达林顿—共射共基结构的增益模块", 《电讯技术》, vol. 50, no. 11, 30 November 2010 (2010-11-30), pages 80 - 84 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104113291A (en) * | 2014-07-28 | 2014-10-22 | 中国电子科技集团公司第二十四研究所 | Low-voltage Darlington amplifier |
| CN104113291B (en) * | 2014-07-28 | 2016-10-19 | 中国电子科技集团公司第二十四研究所 | Low-voltage darlington amplifier |
| CN104124931A (en) * | 2014-08-07 | 2014-10-29 | 苏州容芯微电子有限公司 | Broadband amplifier |
| CN104539247A (en) * | 2014-12-18 | 2015-04-22 | 青岛歌尔声学科技有限公司 | Wideband amplifier circuit of Darlington structure |
| CN104539247B (en) * | 2014-12-18 | 2017-09-15 | 青岛歌尔声学科技有限公司 | A kind of wide-band amplifier circuit of darlington structure |
| CN113098407A (en) * | 2021-04-09 | 2021-07-09 | 成都通量科技有限公司 | Novel driving amplifier |
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Application publication date: 20120118 |