CN104539247B - A kind of wide-band amplifier circuit of darlington structure - Google Patents
A kind of wide-band amplifier circuit of darlington structure Download PDFInfo
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Abstract
The invention discloses a kind of wide-band amplifier circuit of darlington structure, including：First order amplifying circuit, second level amplifying circuit and phase regulating circuit；First order amplifying circuit includes：First triode, and the base stage of the first triode is the signal input part of the wide-band amplifier circuit；Second level amplifying circuit includes：Second triode and the 3rd triode, the emitter stage of the second triode are connected with the colelctor electrode of the 3rd triode, the base stage connection DC offset voltage of the second triode, the grounded emitter of the 3rd triode；The emitter stage of first triode is connected with the base stage of the 3rd triode, and the colelctor electrode of the first triode is connected with the colelctor electrode of the second triode and turns into the signal output part of the wide-band amplifier circuit；Phase regulating circuit, the current phase for adjusting first order amplifying circuit colelctor electrode；One end ground connection of phase regulating circuit, the other end connects the connection end of the emitter stage of the first triode and the base stage of the 3rd triode.
Description
Technical field
The present invention relates to amplifier circuit technical field, more particularly to a kind of wide-band amplifier circuit of darlington structure.
Background technology
The design of broad band amplifier turns into one of monolithic integrated microwave circuit (MMIC) field in modern electronic warfare
Hot issue.Darlington is born structure and is widely used in the design of wide-band amplifier circuit.Fig. 1 is traditional darlington structure
The structural representation of wide-band amplifier circuit, wherein a are the input of whole circuit, and b is the output end of whole circuit, due to the
There is the phase difference of 180 degree in one-level amplifying circuit (including Q5) and second level amplifying circuit (including Q6) so that whole circuit
Output end b electric current be triode Q5 colelctor electrode and the difference of triode Q6 collector currents, cause gain performance to decline, institute
Can not meet, broad band amplifier band is wide, high gain demand, and mostly uses GaAs PHEMT techniques, and price is held high
It is expensive.If reducing the phase difference of this two-stage in high frequency, it is possible to so that gain is compensated to lift bandwidth in high frequency.
The content of the invention
The technical problem existed for above-mentioned prior art, it is an object of the invention to provide a kind of width of darlington structure
Band amplifier circuit, the characteristics of wide-band amplifier circuit has with wide, high gain.
The invention discloses a kind of wide-band amplifier circuit of darlington structure, the wide-band amplifier circuit includes：First
Level amplifying circuit, second level amplifying circuit and phase regulating circuit；
The first order amplifying circuit includes：First triode, and the base stage of first triode is broadband amplification
The signal input part of device circuit；
The second level amplifying circuit includes：Second triode and the 3rd triode, the emitter stage of second triode
It is connected with the colelctor electrode of the 3rd triode, the base stage connection DC offset voltage of second triode, the described 3rd 3
The grounded emitter of pole pipe；
The emitter stage of first triode is connected with the base stage of the 3rd triode, the current collection of first triode
Pole is connected with the colelctor electrode of second triode and turns into the signal output part of the wide-band amplifier circuit；
The phase regulating circuit, the current phase for adjusting first order amplifying circuit colelctor electrode；
One end ground connection of the phase regulating circuit, the other end connects the emitter stage and the described 3rd of first triode
The connection end of the base stage of triode.
Optionally, the phase regulating circuit includes：First inductance, first resistor and FET；
One end of first inductance is as the other end of the phase regulating circuit, the transmitting with first triode
The base stage of pole and the 3rd triode is connected；
The other end of first inductance is connected with one end of the first resistor, and its connection end is used as the phase adjusted
One end of circuit；
The other end of the first resistor is connected with the grid of the FET；
The drain electrode of the FET is grounded respectively with source electrode.
Optionally, the wide-band amplifier circuit also includes：Negative-feedback circuit, is connected across the signal input part and signal is defeated
Go out between end, for making, the voltage of base stage of the first triode is equal to the voltage of the signal output part and described signal is inputted
The difference in voltage at end.
Optionally, the negative-feedback circuit includes：Second resistance, 3rd resistor, electric capacity and operational amplifier；
The in-phase input end of the operational amplifier connects the signal input part, and the output end of the operational amplifier connects
The signal output part is connect, the inverting input of the operational amplifier is connected with one end of the second resistance, described second
The other end of resistance is connected with the output end and the signal output part of the operational amplifier；
The electric capacity is in parallel with the 3rd resistor, wherein connection end ground connection in parallel, another connection end in parallel with
The inverting input of the operational amplifier, one end of the second resistance are connected.
Optionally, the wide-band amplifier circuit also includes：4th resistance, for adjust the first triode emitter stage it is inclined
Put electric current；
One end of the phase regulating circuit leads to the 4th resistance eutral grounding.
Optionally, the wide-band amplifier circuit also includes：Second inductance, the emitter stage for adjusting the 3rd triode
Bias current；
The emitter stage of 3rd triode is grounded by second inductance.
Optionally, the wide-band amplifier circuit uses InGaP/GaAs HBT techniques.
Compared with prior art, beneficial effects of the present invention are：
A kind of wide-band amplifier circuit of darlington structure disclosed by the invention, adds in the emitter stage of first order amplifying circuit
Applying aspect adjusts circuit, to adjust the phase of first order amplifying circuit colelctor electrode, so as to reduce the phase with second level amplifying circuit
Potential difference reaches the compensation of gain；The second triode is added in the amplifying circuit of the second level, and is dropped using cascode structure
The influence of low the Miller effect, so that the dominant pole of the wide-band amplifier circuit is moved to right, expands its bandwidth.With traditional Da Lin
Structure of pausing is compared, and the bandwidth expansion of the wide-band amplifier circuit is 400MHz~7GHz, and gain is more than 12dB.The broad band amplifier
The characteristics of circuit has low cost, technical maturity, while having carried out phasing to two-stage amplifying circuit, solves tradition and reaches woods
Defect of the structure in terms of price, bandwidth, gain.
Brief description of the drawings
Fig. 1 is the structural representation of the wide-band amplifier circuit of traditional darlington structure；
Fig. 2 is the structural representation of the embodiment of the present invention one；
Fig. 3 is the structural representation of the embodiment of the present invention two.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
Fig. 2 is the structural representation of the embodiment of the present invention one；As shown in Fig. 2 the invention discloses a kind of darlington structure
Wide-band amplifier circuit, the wide-band amplifier circuit includes：First order amplifying circuit, second level amplifying circuit and phase adjusted
Circuit.
First order amplifying circuit includes：First triode Q1, and the base stage of first triode is the broad band amplifier
The signal input part a of circuit；Second level amplifying circuit includes：Second triode Q2 and the 3rd triode Q3, the second triode Q2
Emitter stage be connected with the 3rd triode Q3 colelctor electrode, the second triode Q2 base stage connection DC offset voltage Vb；3rd
Triode Q3 grounded emitter.
First triode Q1 emitter stage is connected with the 3rd triode Q3 base stage；First triode Q1 colelctor electrode and
Two triode Q2 colelctor electrode is connected and turns into the signal output part b of the wide-band amplifier circuit.
Phase regulating circuit, the current phase for adjusting first order amplifying circuit colelctor electrode.The one of phase regulating circuit
End ground connection；The other end connects the connection end of the first triode Q1 emitter stage and the 3rd triode Q3 base stage.
In the embodiment of the present invention one, the first triode Q1 is as input transistors, and its base stage is the wide-band amplifier circuit
Signal input part, the second triode Q2 is as output transistor, and its colelctor electrode is defeated as the signal of the wide-band amplifier circuit
Go out end, the second triode Q2 and the 3rd triode Q3 series coupleds, form cascode structure.
Further, phase regulating circuit includes：First inductance L1, first resistor R1 and FET Q4.
First inductance L1 one end as phase regulating circuit the other end, with the first triode Q1 emitter stage and
Three triode Q3 base stage is connected；The first inductance L1 other end is connected with first resistor R1 one end, and its connection end is used as phase
One end of position regulation circuit and ground connection；The first resistor R1 other end is connected with FET Q4 grid；FET Q4's
Drain electrode is grounded respectively with source electrode, and FET uses condenser type connection, i.e. drain-source short circuit.
Further, the wide-band amplifier circuit also includes：4th resistance R4, the transmitting for adjusting the first triode Q1
The bias current of pole；The other end of phase regulating circuit leads to the 4th resistance R4 ground connection.
Further, the wide-band amplifier circuit also includes：Second inductance L2, the transmitting for adjusting the 3rd triode Q3
The bias current of pole；3rd triode Q3 emitter stage is grounded by the second inductance L2.
Further, (GaAs base InGaP hetero-junctions is double using InGaP/GaAs HBT for the wide-band amplifier circuit
Gated transistors) technique.
Present example one adds phase regulating circuit in the emitter stage of first order amplifying circuit, by the first inductance,
First resistor and FET three components adjust the phase of first order amplifying circuit colelctor electrode, so as to reduce and the second level
The phase difference of amplifying circuit reaches the compensation of gain.Certain gain is reached by optimizing the value of three elements in high frequency
Compensation, finally expands bandwidth.The second triode is added in the amplifying circuit of the second level, and rice is reduced using cascode structure
The influence of effect is strangled, so that the dominant pole of the wide-band amplifier circuit is moved to right, its bandwidth is expanded.With traditional Darlington knot
Structure is compared, and the bandwidth expansion of the wide-band amplifier circuit is 400MHz~7GHz, and gain is more than 12dB.
The wide-band amplifier circuit of darlington structure disclosed in present example one has that cost is low, technical maturity spy
Point, while having carried out phasing to two-stage amplifying circuit, solves traditional darlington structure in terms of price, bandwidth, gain
Defect.
Embodiment two
Fig. 3 is the structural representation of the embodiment of the present invention two.As shown in figure 3, a kind of broad band amplifier of darlington structure
Circuit, the wide-band amplifier circuit includes：First order amplifying circuit, second level amplifying circuit and phase regulating circuit.
First order amplifying circuit includes：First triode Q1, and the base stage of first triode is the broad band amplifier
The signal input part a of circuit；Second level amplifying circuit includes：Second triode Q2 and the 3rd triode Q3, the second triode Q2
Emitter stage be connected with the 3rd triode Q3 colelctor electrode, the second triode Q2 base stage connection DC offset voltage Vb；3rd
Triode Q3 grounded emitter.
The emitter stage of one or three pole Q1 pipes is connected with the 3rd triode Q3 base stage；First triode Q1 colelctor electrode and
Two triode Q2 colelctor electrode is connected and turns into the signal output part b of the wide-band amplifier circuit.
Phase regulating circuit, the current phase for adjusting first order amplifying circuit colelctor electrode.
One end ground connection of phase regulating circuit；The other end connects first triode Q1 emitter stage and the 3rd triode Q3
The connection end of base stage.
Further, phase regulating circuit includes：First inductance L1, first resistor R1 and FET Q4.
First inductance L1 one end as phase regulating circuit the other end, with the first triode Q1 emitter stage and
Three triode Q3 base stage is connected；The first inductance L1 other end is connected with first resistor R1 one end, and its connection end is used as phase
One end of position regulation circuit and ground connection；The first resistor R1 other end is connected with FET Q4 grid；FET Q4's
Drain electrode is grounded respectively with source electrode, and FET uses condenser type connection, i.e. drain-source short circuit.
Further, the wide-band amplifier circuit also includes：Negative-feedback circuit, is connected across signal input part a and signal is defeated
Go out to hold between b, for make the first triode Q1 voltage of base stage be equal to signal output part voltage and signal input part
Difference in voltage；One end of negative-feedback circuit is connected with the first triode Q1 base stage；The other end of negative-feedback circuit, with the one or three
Pole pipe Q1 colelctor electrode is connected with the connection end of the colelctor electrode of the second triode.
Further, negative-feedback circuit includes：Second resistance R2,3rd resistor R3, electric capacity C1 and operational amplifier U1.
Operational amplifier U1 in-phase input end connection signal input part, operational amplifier U1 output end connection signal is defeated
Go out end, operational amplifier U1 inverting input is connected with second resistance R2 one end, the second resistance R2 other end and computing
Amplifier U1 output end and signal output part is connected.
One end of negative-feedback circuit is operational amplifier U1 in-phase input end, is connected with the first triode Q1 base stage；
The other end of negative-feedback circuit for operational amplifier U1 output end and second resistance R2 connection end, and with the first triode Q1
Emitter stage be connected with the connection end of the 3rd triode Q3 base stage.
Electric capacity C1 is in parallel with 3rd resistor R3, wherein connection end ground connection in parallel, another connection end in parallel and computing
Amplifier U1 inverting input, second resistance R2 one end are connected, i.e.,：Another connection end in parallel, with operational amplifier U1
Inverting input be connected with second resistance R2 connection end.
Wherein, negative-feedback circuit is coupled between signal input part and signal output part, and electric capacity C1 selects suitable capacitive reactance, can
The intermodulation distortion between signal input part and signal output part for eliminating wide-band amplifier circuit, optimizes noise factor
(NF)。
Further, the wide-band amplifier circuit also includes：4th resistance R4, the transmitting for adjusting the first triode Q1
The bias current of pole；The other end of phase regulating circuit leads to the 4th resistance R4 ground connection.
Further, the wide-band amplifier circuit also includes：Second inductance L2, the transmitting for adjusting the 3rd triode Q3
The bias current of pole；3rd triode Q3 emitter stage is grounded by the second inductance L2；Second inductance L2 selects suitable induction reactance,
It can be used for improving the linear of wide-band amplifier circuit.
Further, the wide-band amplifier circuit uses InGaP/GaAs HBT techniques.
First order amplifying circuit in the embodiment of the present invention two is adjusted by the first inductance, first resistor and FET
The current phase of first order amplifying circuit, reduce first order amplifying circuit colelctor electrode and second level amplifying circuit colelctor electrode it
Between electric current phase difference, the change of the phase of whole wide-band amplifier circuit output current can be reflected in second level amplification electricity simultaneously
On the output voltage on road, by adding a negative-feedback between the signal output part and signal input part of wide-band amplifier circuit
Circuit, the base voltage for making the first triode is the output voltage and signal input part of the signal output part of wide-band amplifier circuit
Input voltage difference, such phase difference can be reflected on the emitter current of first order amplifying circuit, then passes through phase adjusted
Circuit carries out phase adjusted, while the change of the grid voltage of FET can also cause the change of its electric capacity, thus can be with
Automatically adjust capacitance and reduce the change brought to adapt to current and phase difference, so as to reach phase-adjusted effect.By in high frequency
Shi Youhua phase regulating circuits and negative-feedback circuit reach certain gain compensation, finally expand bandwidth.The broad band amplifier
The bandwidth expansion of circuit is 400MHz~8GHz, and gain is more than 15dB.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent substitution and improvements made within the spirit and principles in the present invention etc., are all contained in protection scope of the present invention
It is interior.
Claims (7)
1. a kind of wide-band amplifier circuit of darlington structure, it is characterised in that the wide-band amplifier circuit includes：The first order is put
Big circuit, second level amplifying circuit and phase regulating circuit；
The first order amplifying circuit includes：First triode, and the base stage of first triode is broad band amplifier electricity
The signal input part on road；
The second level amplifying circuit includes：Second triode and the 3rd triode, the emitter stage of second triode and institute
The colelctor electrode for stating the 3rd triode is connected, the base stage connection DC offset voltage of second triode, the 3rd triode
Grounded emitter；
The emitter stage of first triode is connected with the base stage of the 3rd triode, the colelctor electrode of first triode with
The colelctor electrode of second triode is connected and turns into the signal output part of the wide-band amplifier circuit；
The phase regulating circuit, the current phase for adjusting first order amplifying circuit colelctor electrode reduces and amplified with the second level
The phase difference of circuit；
One end ground connection of the phase regulating circuit, the other end connects the emitter stage of first triode and the three or three pole
The connection end of the base stage of pipe.
2. the wide-band amplifier circuit of darlington structure according to claim 1, it is characterised in that the phase adjusted electricity
Road includes：First inductance, first resistor and FET；
One end of first inductance as the phase regulating circuit the other end, with the emitter stage of first triode with
And the base stage of the 3rd triode is connected；
The other end of first inductance is connected with one end of the first resistor, and its connection end is used as the phase regulating circuit
One end；
The other end of the first resistor is connected with the grid of the FET；
The drain electrode of the FET is grounded respectively with source electrode.
3. the wide-band amplifier circuit of darlington structure according to claim 2, it is characterised in that broad band amplifier electricity
Road also includes：Negative-feedback circuit, is connected across between the signal input part and signal output part, the base for making the first triode
The voltage of pole is equal to the difference in voltage of the voltage and described signal input part of the signal output part.
4. the wide-band amplifier circuit of darlington structure according to claim 3, it is characterised in that the negative-feedback circuit
Including：Second resistance, 3rd resistor, electric capacity and operational amplifier；
The in-phase input end of the operational amplifier connects the signal input part, the output end connection institute of the operational amplifier
Signal output part is stated, the inverting input of the operational amplifier is connected with one end of the second resistance, the second resistance
The other end be connected with the output end and the signal output part of the operational amplifier；
The electric capacity is in parallel with the 3rd resistor, wherein connection end ground connection in parallel, another connection end in parallel with it is described
The inverting input of operational amplifier, one end of the second resistance are connected.
5. according to the wide-band amplifier circuit of any described darlington structure in claim 1-4, it is characterised in that the broadband
Amplifier circuit also includes：4th resistance, the bias current of the emitter stage for adjusting the first triode；
One end of the phase regulating circuit leads to the 4th resistance eutral grounding.
6. the wide-band amplifier circuit of darlington structure according to claim 5, it is characterised in that broad band amplifier electricity
Road also includes：Second inductance, the bias current of the emitter stage for adjusting the 3rd triode；
The emitter stage of 3rd triode is grounded by second inductance.
7. according to the wide-band amplifier circuit of any described darlington structure in claim 1-4, it is characterised in that the broadband
Amplifier circuit uses InGaP/GaAs HBT techniques.
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| CN201410796213.XA CN104539247B (en) | 2014-12-18 | 2014-12-18 | A kind of wide-band amplifier circuit of darlington structure |
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| CN201410796213.XA CN104539247B (en) | 2014-12-18 | 2014-12-18 | A kind of wide-band amplifier circuit of darlington structure |
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| CN104539247B true CN104539247B (en) | 2017-09-15 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105656435B (en) * | 2016-03-02 | 2018-06-12 | 苏州容芯微电子有限公司 | A kind of broad band amplifier |
| CN109495079A (en) * | 2018-12-29 | 2019-03-19 | 苏州英诺迅科技股份有限公司 | A kind of Darlington circuit compensating high-frequency gain |
| CN109951162B (en) * | 2019-03-08 | 2023-04-28 | 成都中宇微芯科技有限公司 | Millimeter wave power amplifying unit and amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3840854A1 (en) * | 1988-12-03 | 1990-06-07 | Licentia Gmbh | Wide-band amplifier |
| CN102111111A (en) * | 2009-12-23 | 2011-06-29 | 中国科学院微电子研究所 | Monolithic low noise amplifier using resistor for coupling and matching |
| CN102324897A (en) * | 2011-07-18 | 2012-01-18 | 南京国博电子有限公司 | Improved broadband self-bias Darlington linear amplifier circuit |
| CN102368680A (en) * | 2011-09-30 | 2012-03-07 | 烽火通信科技股份有限公司 | Current feedback operational amplifier circuit |
| CN204361999U (en) * | 2014-12-18 | 2015-05-27 | 青岛歌尔声学科技有限公司 | A kind of wide-band amplifier circuit of darlington structure |
-
2014
- 2014-12-18 CN CN201410796213.XA patent/CN104539247B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3840854A1 (en) * | 1988-12-03 | 1990-06-07 | Licentia Gmbh | Wide-band amplifier |
| CN102111111A (en) * | 2009-12-23 | 2011-06-29 | 中国科学院微电子研究所 | Monolithic low noise amplifier using resistor for coupling and matching |
| CN102324897A (en) * | 2011-07-18 | 2012-01-18 | 南京国博电子有限公司 | Improved broadband self-bias Darlington linear amplifier circuit |
| CN102368680A (en) * | 2011-09-30 | 2012-03-07 | 烽火通信科技股份有限公司 | Current feedback operational amplifier circuit |
| CN204361999U (en) * | 2014-12-18 | 2015-05-27 | 青岛歌尔声学科技有限公司 | A kind of wide-band amplifier circuit of darlington structure |
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Effective date of registration: 20240430 Address after: 266104 No. 500, Songling Road, Laoshan District, Qingdao, Shandong Patentee after: GOERTEK TECHNOLOGY Co.,Ltd. Country or region after: China Address before: 266061 5, 3 building, Fortune Plaza, 18 Qinling Mountains Road, Laoshan District, Qingdao, Shandong. Patentee before: QINGDAO GOERTEK TECHNOLOGY Co.,Ltd. Country or region before: China |